JP2008124445A5 - - Google Patents
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- JP2008124445A5 JP2008124445A5 JP2007267546A JP2007267546A JP2008124445A5 JP 2008124445 A5 JP2008124445 A5 JP 2008124445A5 JP 2007267546 A JP2007267546 A JP 2007267546A JP 2007267546 A JP2007267546 A JP 2007267546A JP 2008124445 A5 JP2008124445 A5 JP 2008124445A5
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- photocatalytic
- layer
- conductive layer
- forming
- oxide film
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Claims (7)
前記光触媒導電層上に光触媒反応層を形成し、
前記光触媒反応層の表面に紫外光を照射して、前記光触媒導電層表面に導電性を有し、かつ前記光触媒反応層に比べて濡れ性の高い領域を形成することを特徴とする半導体装置の作製方法。 Forming a photocatalytic conductive layer on the substrate;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light to form a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer. Manufacturing method.
前記ゲート電極上に絶縁層を形成し、
前記絶縁層上に光触媒導電層を形成し、
前記光触媒導電層上に光触媒反応層を形成し、
前記光触媒反応層の表面に紫外光を照射して、前記光触媒導電層表面に導電性を有し、かつ前記光触媒反応層に比べて濡れ性の高い領域を形成し、
前記濡れ性の高い領域に液状のパターン材料を吐出してマスク層を形成し、
前記マスク層を用いて前記光触媒導電層をエッチングすることにより、第１の導電層及び第２の導電層を形成し、
前記第１の導電層及び前記第２の導電層の少なくとも一部を覆うように有機半導体層を形成することを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming an insulating layer on the gate electrode;
Forming a photocatalytic conductive layer on the insulating layer;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer,
Forming a mask layer by discharging a liquid pattern material to the high wettability region,
Etching the photocatalytic conductive layer using the mask layer to form a first conductive layer and a second conductive layer;
A method for manufacturing a semiconductor device, comprising forming an organic semiconductor layer so as to cover at least part of the first conductive layer and the second conductive layer.
前記光触媒導電層上に光触媒反応層を形成し、
前記光触媒反応層の表面に紫外光を照射して、前記光触媒導電層表面に導電性を有し、かつ前記光触媒反応層に比べて濡れ性の高い領域を形成し、
前記濡れ性の高い領域に液状の発光材料を吐出して発光物質を有する層を形成し、
前記発光物質を有する層上に導電層を形成することを特徴とする半導体装置の作製方法。 Forming a photocatalytic conductive layer on the substrate;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer,
A liquid luminescent material is ejected onto the highly wettable region to form a layer having a luminescent material,
A method for manufacturing a semiconductor device, wherein a conductive layer is formed over the layer including the light-emitting substance.
前記光触媒導電層上に光触媒反応層を形成し、
前記光触媒反応層の表面に紫外光を照射して、前記光触媒導電層表面に導電性を有し、かつ前記光触媒反応層に比べて濡れ性の高い領域を形成し、
前記濡れ性の高い領域に液状の導電性粒子を有する組成物を吐出し、前記吐出した組成物を焼成し、前記組成物の吐出と焼成を繰り返すことによって、凸状の導電層を形成することを特徴とする半導体装置の作製方法。 Forming a photocatalytic conductive layer on the substrate;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer,
A convex conductive layer is formed by discharging a composition having liquid conductive particles in the highly wettable region, firing the discharged composition, and repeating the discharge and firing of the composition. A method for manufacturing a semiconductor device.
前記光触媒導電層は、抵抗率が１×１０-2Ωｃｍ以下で光触媒性を有する層であることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 4,
The method of manufacturing a semiconductor device, wherein the photocatalytic conductive layer is a layer having a resistivity of 1 × 10 −2 Ωcm or less and having photocatalytic properties.
前記光触媒導電層は、インジウム錫酸化物を含む膜、インジウム錫酸化物に酸化珪素を含有させた導電材料を含む膜、フッ素ドープ酸化錫膜、アンチモンドープ酸化錫膜、酸化錫膜、フッ素ドープ酸化亜鉛膜、アルミニウムドープ酸化亜鉛膜、ガリウムドープ酸化亜鉛膜、ホウ素ドープ酸化亜鉛膜、又は酸化亜鉛膜であることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 5,
The photocatalytic conductive layer includes a film containing indium tin oxide, a film containing a conductive material containing silicon oxide in indium tin oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, and a fluorine-doped oxide film. A method for manufacturing a semiconductor device, which is a zinc film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, or a zinc oxide film.
前記光触媒反応層は、アルキル基を有する化合物を含む組成物、又は有機シランを含む組成物を用いて形成することを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 6,
The method for manufacturing a semiconductor device, wherein the photocatalytic reaction layer is formed using a composition containing a compound having an alkyl group or a composition containing an organosilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007267546A JP5254589B2 (en) | 2006-10-17 | 2007-10-15 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006282296 | 2006-10-17 | ||
| JP2006282296 | 2006-10-17 | ||
| JP2007267546A JP5254589B2 (en) | 2006-10-17 | 2007-10-15 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008124445A JP2008124445A (en) | 2008-05-29 |
| JP2008124445A5 true JP2008124445A5 (en) | 2010-11-18 |
| JP5254589B2 JP5254589B2 (en) | 2013-08-07 |
Family
ID=39508821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007267546A Expired - Fee Related JP5254589B2 (en) | 2006-10-17 | 2007-10-15 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5254589B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100984256B1 (en) * | 2009-08-17 | 2010-09-30 | (주) 파루 | Control method of the overlay accuracy using by self-aligned gravure printing |
| KR101945301B1 (en) | 2009-10-16 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device, display device and electronic device |
| KR101894898B1 (en) * | 2011-02-11 | 2018-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting device and electronic device using light-emitting device |
| US9320155B2 (en) | 2012-04-27 | 2016-04-19 | Panasonic Intellectual Property Management Co., Ltd. | Ceramic substrate composite and method for manufacturing ceramic substrate composite |
| EP2867928B1 (en) * | 2012-06-29 | 2018-08-15 | Lumileds Holding B.V. | Ii-vi based light emitting semiconductor device |
| JP6184234B2 (en) * | 2013-08-02 | 2017-08-23 | 富士フイルム株式会社 | Organic thin film transistor, organic semiconductor thin film and organic semiconductor material |
| DE102014008963A1 (en) * | 2014-06-23 | 2016-01-07 | Merck Patent Gmbh | Additive for LDS plastics |
| CN114656804B (en) * | 2022-03-03 | 2022-12-09 | 江苏圣天新材料有限公司 | Preparation method of soft composite silicon micropowder for copper-clad plate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298062A (en) * | 2002-03-29 | 2003-10-17 | Sharp Corp | Thin film transistor and its manufacturing method |
| JP4324355B2 (en) * | 2002-09-13 | 2009-09-02 | 大日本印刷株式会社 | Method for producing pattern forming body |
| JP4498715B2 (en) * | 2003-09-26 | 2010-07-07 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5116212B2 (en) * | 2004-03-19 | 2013-01-09 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film transistor |
| JP5110785B2 (en) * | 2004-10-08 | 2012-12-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing display device |
| JP4613044B2 (en) * | 2004-10-26 | 2011-01-12 | 大日本印刷株式会社 | Substrates for organic electroluminescent devices |
-
2007
- 2007-10-15 JP JP2007267546A patent/JP5254589B2/en not_active Expired - Fee Related
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