JP2006196879A5 - - Google Patents
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- JP2006196879A5 JP2006196879A5 JP2005355668A JP2005355668A JP2006196879A5 JP 2006196879 A5 JP2006196879 A5 JP 2006196879A5 JP 2005355668 A JP2005355668 A JP 2005355668A JP 2005355668 A JP2005355668 A JP 2005355668A JP 2006196879 A5 JP2006196879 A5 JP 2006196879A5
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- layer
- substance
- semiconductor device
- manufacturing
- rough surface
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Claims (7)
前記膜に選択的に光を照射することによって、前記物質が分解された領域を選択的に形成し、
前記領域が形成された粗面を有する層上に、導電性材料を含む組成物を吐出することを特徴とする半導体装置の作製方法。 Forming a film containing a substance having low wettability on a layer having a rough surface;
By selectively irradiating the film with light, a region where the substance is decomposed is selectively formed,
A method for manufacturing a semiconductor device, wherein a composition containing a conductive material is discharged over a layer having a rough surface in which the region is formed .
前記マスク層を除去した後、前記粗面を有する層上に、導電性材料を含む組成物を吐出することを特徴とする半導体装置の作製方法。 A film containing a substance having low wettability is formed over a layer having a rough surface on which a mask layer is selectively formed;
After removing the mask layer, a method for manufacturing a pre-SL in a layer onto which has a rough surface, the semiconductor device characterized by discharging a composition including a conductive material.
前記ぬれ性が低い物質は、フッ化炭素基を有する物質またはシランカップリング剤を含む物質であることを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the substance having low wettability is a substance having a fluorocarbon group or a substance containing a silane coupling agent.
前記粗面を有する層は、ガラス基板上に、酸化チタンナノ粒子を含む溶液を塗布した層であることを特徴とする半導体装置の作製方法。The layer having a rough surface is a layer in which a solution containing titanium oxide nanoparticles is applied on a glass substrate.
前記粗面を有する層は、ガラス基板上に、AlThe layer having the rough surface is formed of Al on a glass substrate. 22 OO 33 ゾルゲル液を塗布した層であることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, which is a layer coated with a sol-gel solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005355668A JP4700484B2 (en) | 2004-12-17 | 2005-12-09 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004366430 | 2004-12-17 | ||
JP2004366430 | 2004-12-17 | ||
JP2005355668A JP4700484B2 (en) | 2004-12-17 | 2005-12-09 | Method for manufacturing semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006196879A JP2006196879A (en) | 2006-07-27 |
JP2006196879A5 true JP2006196879A5 (en) | 2009-01-15 |
JP4700484B2 JP4700484B2 (en) | 2011-06-15 |
Family
ID=36802663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005355668A Expired - Fee Related JP4700484B2 (en) | 2004-12-17 | 2005-12-09 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4700484B2 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5110785B2 (en) * | 2004-10-08 | 2012-12-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing display device |
EP2047917B1 (en) * | 2006-07-31 | 2014-10-15 | Nippon Soda Co., Ltd. | Method for producing organic thin film by using film physical property improving process |
JP5371240B2 (en) * | 2006-12-27 | 2013-12-18 | 株式会社半導体エネルギー研究所 | Wiring fabrication method |
JP5332145B2 (en) * | 2007-07-18 | 2013-11-06 | 株式会社リコー | Multilayer structure, electronic device, electronic device array, and display device |
JP2009026901A (en) * | 2007-07-18 | 2009-02-05 | Ricoh Co Ltd | Laminate structure, electronic device, electronic device array, and display device |
JP2009026900A (en) * | 2007-07-18 | 2009-02-05 | Ricoh Co Ltd | Laminate structure, electronic element, manufacturing methods thereof, and display device |
JP2009038185A (en) * | 2007-08-01 | 2009-02-19 | Konica Minolta Holdings Inc | Forming method of conductive film pattern, wiring board, and display device |
JP2009054949A (en) * | 2007-08-29 | 2009-03-12 | Seiko Instruments Inc | Method for forming metal wiring |
JP2010157532A (en) * | 2008-12-26 | 2010-07-15 | Hitachi Ltd | Method of manufacturing semiconductor device, and semiconductor device |
KR101107160B1 (en) | 2009-07-10 | 2012-01-25 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display and method for manufacturing the same |
KR101107158B1 (en) * | 2009-07-10 | 2012-01-25 | 삼성모바일디스플레이주식회사 | Organic light emitting diode display and method for manufacturing the same |
US8617993B2 (en) * | 2010-02-01 | 2013-12-31 | Lam Research Corporation | Method of reducing pattern collapse in high aspect ratio nanostructures |
JP2013105797A (en) * | 2011-11-11 | 2013-05-30 | Fujifilm Corp | Pattern forming method |
JP2014107394A (en) * | 2012-11-27 | 2014-06-09 | Toyota Motor Corp | Metalized film capacitor |
KR101605884B1 (en) | 2014-04-21 | 2016-03-24 | 한국과학기술원 | Method for manufacturing thin film transistor using laser |
WO2020158408A1 (en) * | 2019-02-01 | 2020-08-06 | 富士フイルム株式会社 | Organic thin-film transistor and method for producing organic thin-film transistor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3870562B2 (en) * | 1998-07-16 | 2007-01-17 | セイコーエプソン株式会社 | Pattern forming method and pattern forming substrate manufacturing method |
JP4035968B2 (en) * | 2000-06-30 | 2008-01-23 | セイコーエプソン株式会社 | Method for forming conductive film pattern |
JP2003076004A (en) * | 2001-09-04 | 2003-03-14 | Fuji Photo Film Co Ltd | Pattern forming method |
JP2004200365A (en) * | 2002-12-18 | 2004-07-15 | Konica Minolta Holdings Inc | Organic thin film transistor element |
JP4557755B2 (en) * | 2004-03-11 | 2010-10-06 | キヤノン株式会社 | Substrate, conductive substrate, and organic field effect transistor manufacturing method |
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2005
- 2005-12-09 JP JP2005355668A patent/JP4700484B2/en not_active Expired - Fee Related
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