JP2006253661A5 - - Google Patents
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- JP2006253661A5 JP2006253661A5 JP2006029163A JP2006029163A JP2006253661A5 JP 2006253661 A5 JP2006253661 A5 JP 2006253661A5 JP 2006029163 A JP2006029163 A JP 2006029163A JP 2006029163 A JP2006029163 A JP 2006029163A JP 2006253661 A5 JP2006253661 A5 JP 2006253661A5
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- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- insulating layer
- semiconductor device
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 14
- 239000011810 insulating material Substances 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000002940 repellent Effects 0.000 claims 6
- 239000005871 repellent Substances 0.000 claims 6
- 239000006087 Silane Coupling Agent Substances 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 239000011521 glass Substances 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N Fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 239000011368 organic material Substances 0.000 claims 2
Claims (14)
前記第１の導電層の側端部と接する第１の絶縁層と、
前記第１の導電層及び前記第１の絶縁層上に接して設けられた第２の絶縁層と、
前記第２の絶縁層上に設けられた第２の導電層とを有し、
前記第２の絶縁層は、ガラス転移温度以上で流動化する絶縁性材料によって形成されており、
前記絶縁性材料が流動化した組成物に対するぬれ性は、前記第１の導電層より前記第１の絶縁層の方が高いことを特徴とする半導体装置。 A first conductive layer;
A first insulating layer in contact with a side edge of the first conductive layer;
A second insulating layer provided on and in contact with the first conductive layer and the first insulating layer;
A second conductive layer provided on the second insulating layer,
The second insulating layer is made of an insulating material that fluidizes above the glass transition temperature ,
The semiconductor device according to claim 1, wherein the first insulating layer has higher wettability with respect to the composition in which the insulating material is fluidized than the first conductive layer.
前記第１の導電層の側端部に接して第１の絶縁層を形成し、
前記第１の導電層及び前記第１の絶縁層上に接して第２の絶縁層を形成し、
前記第２の絶縁層上に第２の導電層を形成し、
前記第２の絶縁層は、ガラス転移温度以上で流動化する絶縁性材料によって形成されており、
前記絶縁性材料が流動化した組成物に対するぬれ性は、前記第１の導電層より前記第１の絶縁層の方が高いことを特徴とする半導体装置の作製方法。 Forming a first conductive layer;
Forming a first insulating layer in contact with a side edge of the first conductive layer;
A second insulating layer formed in contact with the first conductive layer and the first insulating layer,
Forming a second conductive layer on the second insulating layer;
The second insulating layer is made of an insulating material that fluidizes above the glass transition temperature ,
The method for manufacturing a semiconductor device, wherein the first insulating layer has higher wettability to the composition in which the insulating material is fluidized than the first conductive layer.
前記第１の導電層の側端部に接して第１の絶縁層を形成し、
前記第１の導電層及び前記第１の絶縁層上に接して第２の絶縁層を形成し、
前記第２の絶縁層上に第２の導電層を形成し、
前記第２の絶縁層は、ガラス転移温度以上で流動化する絶縁性材料によって形成されており、
前記絶縁性材料が流動化した組成物に対するぬれ性は、前記第１の導電層より前記第１の絶縁層の方が高いことを特徴とすることを特徴とする半導体装置の作製方法。 Forming a first conductive layer having a liquid repellent layer;
Forming a first insulating layer in contact with a side edge of the first conductive layer;
A second insulating layer formed in contact with said first conductive layer and the first insulating layer,
The second conductive layer is formed on the second insulating layer,
The second insulating layer is made of an insulating material that fluidizes above the glass transition temperature,
The method for manufacturing a semiconductor device, wherein the first insulating layer has higher wettability to the composition in which the insulating material is fluidized than the first conductive layer .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006029163A JP4932268B2 (en) | 2005-02-10 | 2006-02-07 | Semiconductor device and manufacturing method of semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005035258 | 2005-02-10 | ||
| JP2005035258 | 2005-02-10 | ||
| JP2006029163A JP4932268B2 (en) | 2005-02-10 | 2006-02-07 | Semiconductor device and manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006253661A JP2006253661A (en) | 2006-09-21 |
| JP2006253661A5 true JP2006253661A5 (en) | 2009-03-26 |
| JP4932268B2 JP4932268B2 (en) | 2012-05-16 |
Family
ID=37093749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006029163A Expired - Fee Related JP4932268B2 (en) | 2005-02-10 | 2006-02-07 | Semiconductor device and manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4932268B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101169395B1 (en) * | 2006-10-13 | 2012-07-30 | 삼성전자주식회사 | Method of manufacturing phase change memory device comprising surface treatment process of phase change layer |
| JP2019145546A (en) * | 2018-02-16 | 2019-08-29 | 住友電工デバイス・イノベーション株式会社 | Manufacturing method of semiconductor device |
| JP6622940B1 (en) * | 2019-07-02 | 2019-12-18 | 株式会社日立パワーソリューションズ | Double-sided mounting substrate, method for manufacturing double-sided mounting substrate, and semiconductor laser |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722669A (en) * | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | Plastic functional element |
| JP3104843B2 (en) * | 1994-08-19 | 2000-10-30 | 川崎製鉄株式会社 | Anti-fuse type semiconductor integrated circuit device |
| JP4731913B2 (en) * | 2003-04-25 | 2011-07-27 | 株式会社半導体エネルギー研究所 | Pattern forming method and semiconductor device manufacturing method |
| JP2005019955A (en) * | 2003-05-30 | 2005-01-20 | Seiko Epson Corp | Method for forming thin film pattern and method for manufacturing corresponding devices, electro-optic device and electronic instrument |
-
2006
- 2006-02-07 JP JP2006029163A patent/JP4932268B2/en not_active Expired - Fee Related
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