JP2005311325A5 - - Google Patents

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JP2005311325A5
JP2005311325A5 JP2005081013A JP2005081013A JP2005311325A5 JP 2005311325 A5 JP2005311325 A5 JP 2005311325A5 JP 2005081013 A JP2005081013 A JP 2005081013A JP 2005081013 A JP2005081013 A JP 2005081013A JP 2005311325 A5 JP2005311325 A5 JP 2005311325A5
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Japan
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layer
forming
electrode
source electrode
manufacturing
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JP2005081013A
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JP5057652B2 (en
JP2005311325A (en
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Priority claimed from JP2005081013A external-priority patent/JP5057652B2/en
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Publication of JP2005311325A5 publication Critical patent/JP2005311325A5/ja
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Claims (6)

透光性を有する基板の上にゲート電極を形成し、Forming a gate electrode on a light-transmitting substrate;
前記基板及び前記ゲート電極の上にゲート絶縁膜を形成し、Forming a gate insulating film on the substrate and the gate electrode;
前記ゲート絶縁膜の上に光触媒物質を有する第１の層を形成し、Forming a first layer having a photocatalytic material on the gate insulating film;
前記光触媒物質を有する第１の層の上にフッ化炭素鎖を含む物質を有する第２の層を形成し、Forming a second layer having a substance containing a fluorocarbon chain on the first layer having the photocatalytic substance;
前記ゲート電極をマスクとして用いて、前記基板の裏面から前記第１の層及び前記第２の層に光照射を行うことによって、前記第２の層を選択的に改質し、Using the gate electrode as a mask, by selectively irradiating the first layer and the second layer from the back surface of the substrate, the second layer is selectively modified,
前記第２の層の改質した領域及び改質していない領域に導電性材料を含む組成物を吐出して、前記改質した領域の上に前記組成物を残存させることによってソース電極及びドレイン電極を形成し、By discharging a composition containing a conductive material to the modified region and the unmodified region of the second layer, and leaving the composition on the modified region, the source electrode and the drain Forming electrodes,
前記ソース電極、前記ドレイン電極、及び前記第２の層の上に半導体層を形成することを特徴とする薄膜トランジスタの作製方法。A method for manufacturing a thin film transistor, wherein a semiconductor layer is formed over the source electrode, the drain electrode, and the second layer. 透光性を有する基板の上にソース電極及びドレイン電極を形成し、Forming a source electrode and a drain electrode on a light-transmitting substrate;
前記ソース電極、前記ドレイン電極、及び前記ソース電極と前記ドレイン電極との間に位置する前記基板の上に半導体層を形成し、Forming a semiconductor layer on the source electrode, the drain electrode, and the substrate located between the source electrode and the drain electrode;
前記半導体層の上にゲート絶縁膜を形成し、Forming a gate insulating film on the semiconductor layer;
前記ゲート絶縁膜の上に光触媒物質を有する第１の層を形成し、Forming a first layer having a photocatalytic material on the gate insulating film;
前記第１の層の上にフッ化炭素鎖を含む物質を有する第２の層を形成し、Forming a second layer having a substance containing a fluorocarbon chain on the first layer;
前記ソース電極及び前記ドレイン電極をマスクとして用いて、前記基板の裏面から前記第１の層及び前記第２の層に光照射を行うことによって、前記第２の層を選択的に改質し、Using the source electrode and the drain electrode as a mask, the first layer and the second layer are irradiated with light from the back surface of the substrate, thereby selectively modifying the second layer,
前記第２の層の改質した領域及び改質していない領域に導電性材料を含む組成物を吐出して、前記改質した領域の上に前記組成物を残存させることによってゲート電極を形成することを特徴とする薄膜トランジスタの作製方法。A gate electrode is formed by discharging a composition containing a conductive material to the modified region and the unmodified region of the second layer, and leaving the composition on the modified region. And a manufacturing method of a thin film transistor. 請求項１又は請求項２において、In claim 1 or claim 2,
前記半導体層は、印刷法、スプレー法、スピン塗布法、又は液滴吐出法により形成することを特徴とする薄膜トランジスタの作製方法。The semiconductor layer is formed by a printing method, a spray method, a spin coating method, or a droplet discharge method. 請求項１乃至請求項３のいずれか一において、In any one of Claim 1 thru | or 3,
前記光触媒物質は、酸化チタンであることを特徴とする薄膜トランジスタの作製方法。The method of manufacturing a thin film transistor, wherein the photocatalytic substance is titanium oxide. 請求項１乃至請求項４のいずれか一において、In any one of Claims 1 thru | or 4,
前記改質した領域は、前記改質していない領域より、前記導電性材料を含む組成物に対するぬれ性が高いことを特徴とする薄膜トランジスタの作製方法。The method for manufacturing a thin film transistor is characterized in that the modified region has higher wettability to the composition containing the conductive material than the unmodified region. 請求項１乃至請求項５に記載の作製方法を用いて作製されたことを特徴とする電子機器。An electronic device manufactured using the manufacturing method according to claim 1.
JP2005081013A 2004-03-24 2005-03-22 Method for manufacturing thin film transistor Expired - Fee Related JP5057652B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005081013A JP5057652B2 (en) 2004-03-24 2005-03-22 Method for manufacturing thin film transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004088068 2004-03-24
JP2004088068 2004-03-24
JP2005081013A JP5057652B2 (en) 2004-03-24 2005-03-22 Method for manufacturing thin film transistor

Publications (3)

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JP2005311325A JP2005311325A (en) 2005-11-04
JP2005311325A5 true JP2005311325A5 (en) 2008-03-27
JP5057652B2 JP5057652B2 (en) 2012-10-24

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US7615488B2 (en) 2004-03-19 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device
CN101030536B (en) * 2006-03-02 2010-06-23 株式会社半导体能源研究所 Manufacturing method for a circuit pattern, a thin film transistor and an electronic appliance
JP2007266596A (en) * 2006-03-02 2007-10-11 Semiconductor Energy Lab Co Ltd Circuit pattern and method for manufacturing thin-film transistor, and electronic device mounted with the thin-film transistor
JP5186750B2 (en) * 2006-09-29 2013-04-24 大日本印刷株式会社 Organic semiconductor device and manufacturing method thereof
JP5186749B2 (en) * 2006-09-29 2013-04-24 大日本印刷株式会社 Organic semiconductor device and manufacturing method thereof
US7646015B2 (en) 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP5210594B2 (en) * 2006-10-31 2013-06-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5138927B2 (en) * 2006-12-25 2013-02-06 共同印刷株式会社 Flexible TFT substrate, manufacturing method thereof and flexible display
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012117439A1 (en) * 2011-02-28 2012-09-07 パナソニック株式会社 Thin-film semiconductor device and manufacturing method therefor
KR101851565B1 (en) * 2011-08-17 2018-04-25 삼성전자주식회사 Transistor, method of manufacturing the same and electronic device comprising transistor
JP7093725B2 (en) * 2016-12-16 2022-06-30 メルク パテント ゲーエムベーハー Organic electroluminescence element
CN113019854B (en) * 2021-03-07 2022-10-21 贾亮 Electroluminescent paint coating, manufacturing process and application thereof

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JP3403935B2 (en) * 1997-03-14 2003-05-06 株式会社東芝 Image forming apparatus, image forming method, pattern forming method, and photoreceptor used for them
JP2000171629A (en) * 1998-12-09 2000-06-23 Canon Inc Color filter and its manufacture, liquid crystal device
JP3381146B2 (en) * 1999-02-05 2003-02-24 大日本印刷株式会社 Color filter and method of manufacturing the same
JP4289522B2 (en) * 1999-03-11 2009-07-01 大日本印刷株式会社 Manufacturing method of pattern forming body
JP2000343848A (en) * 1999-03-30 2000-12-12 Kyodo Printing Co Ltd Image forming material and method using photocatalytic body
US6791144B1 (en) * 2000-06-27 2004-09-14 International Business Machines Corporation Thin film transistor and multilayer film structure and manufacturing method of same
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