JP2005346043A5 - - Google Patents

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Publication number
JP2005346043A5
JP2005346043A5 JP2005130607A JP2005130607A JP2005346043A5 JP 2005346043 A5 JP2005346043 A5 JP 2005346043A5 JP 2005130607 A JP2005130607 A JP 2005130607A JP 2005130607 A JP2005130607 A JP 2005130607A JP 2005346043 A5 JP2005346043 A5 JP 2005346043A5
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JP
Japan
Prior art keywords
film
pattern
layer
conductive film
display device
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JP2005130607A
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Japanese (ja)
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JP4877871B2 (en
JP2005346043A (en
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Priority to JP2005130607A priority Critical patent/JP4877871B2/en
Priority claimed from JP2005130607A external-priority patent/JP4877871B2/en
Publication of JP2005346043A publication Critical patent/JP2005346043A/en
Publication of JP2005346043A5 publication Critical patent/JP2005346043A5/ja
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Publication of JP4877871B2 publication Critical patent/JP4877871B2/en
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Claims (12)

絶縁表面上に導電膜を成膜し、前記導電膜上に第１の膜パターンを形成し、前記導電膜上であって、且つ前記第１の膜パターンが形成された領域を除く領域に第２の膜パターンを形成し、前記第１の膜パターンを除去して前記導電膜の一部を露出した後、前記露出した前記導電膜の一部を除去して、画素電極を形成することを特徴とする表示装置の作製方法。 A conductive film formed over an insulating surface, the first layer pattern is formed on the conductive film, even on the conductive layer, and second in a region other than the region where the first layer pattern is formed Forming a pixel electrode by forming a second film pattern, removing the first film pattern to expose a part of the conductive film, and then removing a part of the exposed conductive film. A method for manufacturing a display device. 絶縁表面上に導電膜を成膜し、前記導電膜上に第１の膜パターンを形成し、前記導電膜上であって、且つ前記第１の膜パターンが形成されていない領域に第２の膜パターンを形成し、前記第１の膜パターンを除去して前記導電膜の一部を露出した後、前記露出した前記導電膜の一部を除去して、画素電極を形成することを特徴とする表示装置の作製方法。 A conductive film is formed over an insulating surface, the first layer pattern is formed over the conductive film, even on the conductive layer, and the first film pattern is formed Tei no region in the second Forming a film pattern; removing the first film pattern to expose a part of the conductive film; and removing a part of the exposed conductive film to form a pixel electrode. For manufacturing a display device. 絶縁表面上に導電膜を成膜し、前記導電膜上に第１の膜パターンを形成し、前記導電膜上であって、且つ前記第１の膜パターンが形成された領域を除く領域に第２の膜パターンを形成し、前記第１の膜パターンを除去した後、前記第２の膜パターンをマスクとして前記導電膜の一部を除去して、画素電極を形成することを特徴とする表示装置の作製方法。 A conductive film formed over an insulating surface, the first layer pattern is formed on the conductive film, even on the conductive layer, and second in a region other than the region where the first layer pattern is formed And forming a pixel electrode by forming a second film pattern, removing the first film pattern, and then removing a part of the conductive film using the second film pattern as a mask. Device fabrication method. 絶縁表面上に導電膜を成膜し、前記導電膜上に第１の膜パターンを形成し、前記導電膜上であって、且つ前記第１の膜パターンが形成されていない領域に第２の膜パターンを形成し、前記第１の膜パターンを除去した後、前記第２の膜パターンをマスクとして前記導電膜の一部を除去して、画素電極を形成することを特徴とする表示装置の作製方法。 A conductive film is formed over an insulating surface, the first layer pattern is formed over the conductive film, even on the conductive layer, and the first film pattern is formed Tei no region in the second A pixel electrode is formed by forming a film pattern, removing the first film pattern, and then removing a part of the conductive film using the second film pattern as a mask. Manufacturing method. 請求項１乃至請求項４のいずれか一項において、前記第１の膜パターンを、液滴吐出法、インクジェット法、又は印刷法で形成することを特徴とする表示装置の作製方法。 In any one of claims 1 to 4, the first layer pattern, a droplet discharge method, a method for manufacturing a display device, and forming an ink-jet method, or a printing method. 請求項１乃至請求項５のいずれか一項において、前記第１の膜パターンは、前記第２の膜パターンより塗れ性が低いことを特徴とする表示装置の作製方法。 In any one of claims 1 to 5, wherein the first layer pattern, a method for manufacturing a display device, wherein the lower wettability than the second layer pattern. 請求項１乃至請求項６のいずれか一項において、前記第１の膜パターンは、絶縁層を形成した後、フッ素プラズマを前記絶縁層の表面に曝して形成することを特徴とする表示装置の作製方法。 In the claims 1 to any one of claims 6, wherein the first layer pattern, the display device characterized by after forming the insulating layer is formed by exposing the fluorine plasma on the surface of the insulating layer Manufacturing method. 請求項１乃至請求項６のいずれか一項において、前記第１の膜パターンは、アルキル基又はフッ化炭素鎖を有する化合物で形成されていることを特徴とする表示装置の作製方法。 In the claims 1 to any one of claims 6, wherein the first layer pattern, a method for manufacturing a display device characterized by being formed by a compound having an alkyl group or a fluorocarbon chain. 請求項１乃至請求項８のいずれか一項において、前記第２の膜パターンの塗れ性は、前記第１の膜パターンの塗れ性よりも高いことを特徴とする表示装置の作製方法。 In any one of claims 1 to 8, wherein the wettability of the second layer pattern, a method for manufacturing a display device, wherein the higher than wettability of the first layer pattern. 請求項１乃至請求項９のいずれか一項において、前記画素電極を形成した後に、ゲート電極、ゲート絶縁膜、半導体膜、及び前記画素電極に接続するソース電極又はドレイン電極を有する薄膜トランジスタを形成することを特徴とする表示装置の作製方法。 Formed in any one of claims 1 to 9, after forming the pixel electrode, a gate electrode, a gate insulating film, a semiconductor film, and a thin film transistor having a source electrode and a drain electrode connected to the pixel electrode And a manufacturing method of a display device. 請求項１乃至請求項１０のいずれか一項により作製された表示装置を有する液晶テレビジョン。 A liquid crystal television having a display device manufactured according to any one of claims 1 to 10 . 請求項１乃至請求項１０のいずれか一項により作製された表示装置を有するＥＬテレビジョン。 An EL television having a display device manufactured according to any one of claims 1 to 10 .
JP2005130607A 2004-04-28 2005-04-27 Display device manufacturing method, liquid crystal television, and EL television Expired - Fee Related JP4877871B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005130607A JP4877871B2 (en) 2004-04-28 2005-04-27 Display device manufacturing method, liquid crystal television, and EL television

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004134154 2004-04-28
JP2004134154 2004-04-28
JP2005130607A JP4877871B2 (en) 2004-04-28 2005-04-27 Display device manufacturing method, liquid crystal television, and EL television

Publications (3)

Publication Number Publication Date
JP2005346043A JP2005346043A (en) 2005-12-15
JP2005346043A5 true JP2005346043A5 (en) 2008-06-19
JP4877871B2 JP4877871B2 (en) 2012-02-15

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JP2005130607A Expired - Fee Related JP4877871B2 (en) 2004-04-28 2005-04-27 Display device manufacturing method, liquid crystal television, and EL television

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JP (1) JP4877871B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008081904A1 (en) * 2006-12-27 2008-07-10 Hitachi Chemical Co., Ltd. Engraved plate and base material having conductor layer pattern using the engraved plate
JP4953166B2 (en) * 2007-11-29 2012-06-13 カシオ計算機株式会社 Manufacturing method of display panel
TWI452419B (en) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk Fine pattern mask, process for producing the same, and process for forming fine pattern by using the same
JP5947000B2 (en) * 2010-07-01 2016-07-06 株式会社半導体エネルギー研究所 Electric field drive type display device
JP2013115098A (en) * 2011-11-25 2013-06-10 Sony Corp Transistor, transistor manufacturing method, display device and electronic apparatus
KR101888174B1 (en) * 2011-12-09 2018-08-13 주성엔지니어링(주) Light emitting device
US11209877B2 (en) * 2018-03-16 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Electrical module, display panel, display device, input/output device, data processing device, and method of manufacturing electrical module
KR102620103B1 (en) * 2021-09-17 2024-01-02 주식회사 레티널 Method for manufacturing optical device for augmented reality and optical device for augmented reality manufactured by using the same

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Publication number Priority date Publication date Assignee Title
JPH11340129A (en) * 1998-05-28 1999-12-10 Seiko Epson Corp Method and device for manufacturing pattern
JP2003124215A (en) * 2001-10-15 2003-04-25 Seiko Epson Corp Patterning method, semiconductor device, electric circuit, display module, color filter and light emitting element
JP2003317945A (en) * 2002-04-19 2003-11-07 Seiko Epson Corp Manufacturing method for device, device, and electronic apparatus
JP2003331662A (en) * 2002-05-10 2003-11-21 Seiko Epson Corp Patterning method of thin film, organic electroluminescence device, circuit board, and electronic apparatus
JP4378767B2 (en) * 2002-09-26 2009-12-09 セイコーエプソン株式会社 LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE

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