JP2006013480A5

JP2006013480A5 -

Info

Publication number: JP2006013480A5
Application number: JP2005154536A
Authority: JP
Filing date: 2005-05-26
Publication date: 2008-07-10
Anticipated expiration: 2025-05-26

Claims

A conductive layer formed on a substrate having an insulating surface and containing at least one of the substances forming the insulating surface;
An insulating film formed on the conductive layer;
A semiconductor layer formed on the insulating layer,
The semiconductor device, wherein the substance contained in the conductive layer is in contact with the insulating surface.

Formed over a substrate having an insulating surface, of the material forming the insulating surface, the same material as at least one is contained conductive layer,
It is formed on the conductive layer, a first insulating film made of an organic material,
Formed on the first insulating film, a second insulating film made of an inorganic material,
A semiconductor layer formed on the second insulating film ,
The semiconductor device, wherein the substance contained in the conductive layer is in contact with the insulating surface.

In claim 1 or claim 2,
A semiconductor device, wherein the conductive layer is formed by a droplet discharge method.

Formed over a substrate having an insulating surface, of the material forming the insulating surface, a first conductive layer of the same material as at least one is contained,
An insulating film made form the first conductive layer,
A first semiconductor layer made form on prior Symbol insulating film,
A second semiconductor layer having one conductivity type formed on the first semiconductor layer;
A second conductive layer formed on the second semiconductor layer and containing at least one of the substances forming the second semiconductor layer ;
The substance contained in the first conductive layer is in contact with the insulating surface;
The semiconductor device, wherein the substance contained in the second conductive layer is in contact with the second semiconductor layer.

Formed over a substrate having an insulating surface, of the material forming the insulating surface, a first conductive layer of the same material as at least one is contained,
It is formed on the first conductive layer, a first insulating film made of an organic material,
Formed on the first insulating film, a second insulating film made of an inorganic material,
A first semiconductor layer formed on the second insulating film,
A second semiconductor layer having one conductivity type formed on the first semiconductor layer;
A second conductive layer formed on the second semiconductor layer and containing at least one of the materials forming the second semiconductor layer; and
It is formed on the second conductive layer, a third insulating film formed of an organic material,
It formed on the third insulating film, a fourth insulating film made of an inorganic material, and
The substance contained in the first conductive layer is in contact with the insulating surface;
The semiconductor device, wherein the substance contained in the second conductive layer is in contact with the second semiconductor layer.

On a substrate having an insulating surface, a conductive layer containing at least one of the substances forming the insulating surface is formed by a droplet discharge method.
Forming an insulating film on the conductive layer;
Forming a semiconductor layer on the insulating film;
The method for manufacturing a semiconductor device, wherein the substance contained in the conductive layer is in contact with the insulating surface.

On a substrate having an insulating surface , a conductive layer containing at least one of the substances forming the insulating surface is formed by a droplet discharge method .
On the conductive layer, forming a first insulating film made of an organic material,
On the first insulating film, forming a second insulating film made of an inorganic material,
The semi-conductor layer is formed on the second insulating film,
The method for manufacturing a semiconductor device , wherein the substance contained in the conductive layer is in contact with the insulating surface .

Forming a first conductive layer containing at least one of the substances forming the insulating surface on a substrate having an insulating surface by a droplet discharge method ;
Said first conductive layer, forming a first insulating film made of an organic material,
On the first insulating film, forming a second insulating film made of an inorganic material,
The first half conductor layer is formed on the second insulating film,
Forming a second semiconductor layer having one conductivity type on the first semiconductor layer;
On the second semiconductor layer, of the material forming said second semiconductor layer, a second conductive layer with the same material as at least one is contained is formed by a droplet discharge method,
Said second conductive layer, forming a third insulating film formed of an organic material,
On the third insulating film, forming a fourth insulating film made of an inorganic material,
The substance contained in the first conductive layer is in contact with the insulating surface;
The method for manufacturing a semiconductor device, wherein the substance contained in the second conductive layer is in contact with the second semiconductor layer .