JP2008124445A - Semiconductor device, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for easily forming a region with conductivity and high wettability without a step for removing a photocatalytic reaction layer, which is formed over a conductive layer. <P>SOLUTION: The photocatalytic reaction layer is formed over a photocatalytic conductive layer, and the photocatalytic conductive layer is irradiated with ultraviolet light to form a region with conductivity and higher wettability than the photocatalytic reaction layer on a surface of the photocatalytic conductive layer which is irradiated with ultraviolet light, wherein as the photocatalytic conductive layer, a layer having a photocatalytic property of which resistivity is ≤1×10<SP>-2</SP>Ωcm can be used. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a method for manufacturing a semiconductor device using a droplet discharge method.

In recent years, in the production of semiconductor devices such as thin film transistors (hereinafter referred to as TFTs), liquid crystal display devices, or EL display devices, a droplet discharge device is used to form thin films and wirings for the purpose of reducing the cost of equipment and simplifying processes. A method of using is proposed.

However, the low landing accuracy of the liquid material when the liquid material is discharged from the droplet discharge device is a big problem. In recent years, in order to solve this problem, a technique for creating a lyophilic region (a region having high wettability) and a liquid repellent region (a region having low wettability) on the same substrate surface has been proposed. Among them, a technique for increasing the wettability of the surface of the liquid repellent material by utilizing a photocatalytic reaction has attracted attention as a simple and efficient method (for example, Patent Document 1). As a surface modification technique using photocatalytic reaction, an FAS film is formed on a photocatalytic material layer such as titanium oxide (TiO _x ), and ultraviolet light is irradiated to the photocatalytic material layer to decompose FAS by photocatalytic reaction. A technique for improving the wettability of a photocatalytic substance layer such as titanium oxide has also been proposed.
Japanese Patent Laid-Open No. 2005-210014

However, since it is necessary to use a highly insulating material for the photocatalyst substance layer in the prior art, when producing a semiconductor device using the wettability of the photocatalyst substance layer material formed on the conductive layer, the photocatalyst is used. When it is desired to establish electrical continuity between the conductive layer under the substance and another conductive layer that is formed in the upper layer in the subsequent process, it is necessary to remove the photocatalytic substance layer formed on the conductive layer, which increases the number of steps and makes it complicated. There was a problem of becoming.

In view of the above problems, a method for easily forming a region having conductivity and high wettability without going through the step of removing the photocatalytic substance layer formed on the conductive layer in the present invention is proposed.

By forming a photocatalytic reaction layer on the photocatalytic conductive layer and irradiating the photocatalytic conductive layer with ultraviolet light, the photocatalytic conductive layer in the region irradiated with ultraviolet light has conductivity, and the photocatalytic reaction layer has A region having higher wettability is formed. Here, as the photocatalytic conductive layer, a film having a photocatalytic property with a resistivity of 1 × 10 ⁻² Ωcm or less can be used. A layer formed on the photocatalytic conductive layer and reacting with the photocatalytic conductive layer when at least the surface of the photocatalytic conductive layer is irradiated with ultraviolet light is referred to as a photocatalytic reaction layer in this specification, but is also simply referred to as a reaction layer. Can do.

In the method for manufacturing a semiconductor device of the present invention, a photocatalytic conductive layer is formed on a substrate, a photocatalytic reaction layer is formed on the photocatalytic conductive layer, and the surface of the photocatalytic reaction layer is irradiated with ultraviolet light so that the photocatalytic conductive layer is formed. A region having conductivity on the surface of the layer and having higher wettability than the photocatalytic reaction layer is formed.

In the method for manufacturing a semiconductor device of the present invention, a gate electrode is formed on a substrate, an insulating layer is formed on the gate electrode, a photocatalytic conductive layer is formed on the insulating layer, and a photocatalytic reaction is performed on the photocatalytic conductive layer. Forming a layer, irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer; Forming a mask layer by discharging a liquid pattern material to a highly conductive region, and etching the photocatalytic conductive layer using the mask layer to form a first conductive layer and a second conductive layer; An organic semiconductor layer is formed so as to cover at least part of the first conductive layer and the second conductive layer.

In the method for manufacturing a semiconductor device of the present invention, a photocatalytic conductive layer is formed on a substrate, a photocatalytic reaction layer is formed on the photocatalytic conductive layer, and the surface of the photocatalytic reaction layer is irradiated with ultraviolet light so that the photocatalytic conductive layer is formed. Forming a region having conductivity on the surface of the layer and having a high wettability compared to the photocatalytic reaction layer, and discharging a liquid light emitting material to the high wettability region to form a layer having a light emitting substance; A conductive layer is formed over the layer containing the light-emitting substance.

In the method for manufacturing a semiconductor device of the present invention, a photocatalytic conductive layer is formed on a substrate, a photocatalytic reaction layer is formed on the photocatalytic conductive layer, and the surface of the photocatalytic reaction layer is irradiated with ultraviolet light so that the photocatalytic conductive layer is formed. A layer having conductivity on the surface of the layer and having a higher wettability than the photocatalytic reaction layer, discharging a composition having liquid conductive particles in the high wettability region, and discharging the composition A convex conductive layer is formed by firing the product and repeating the application and firing of the composition.

The semiconductor device of the present invention includes a photocatalytic conductive layer formed on a substrate, a photocatalytic reaction layer formed on the substrate and on a side surface of the photocatalytic conductive layer, and a luminescent material formed on the photocatalytic conductive layer. A layer and a conductive layer formed on the layer containing the luminescent substance, the photocatalytic conductive layer surface has conductivity, and has a region with higher wettability than the photocatalytic reaction layer. It is characterized by.

A semiconductor device of the present invention includes a gate electrode formed on a substrate, a first insulating layer formed on the gate electrode, a first conductive layer formed on the first insulating layer, An organic semiconductor layer formed on the first insulating layer and the first conductive layer, a second insulating layer formed on the organic semiconductor layer, and formed on the second insulating layer. A photocatalytic conductive layer, a photocatalytic reaction layer formed on the second insulating layer and on a side surface of the photocatalytic conductive layer, a layer having a luminescent material formed on the photocatalytic conductive layer, and the luminescent material. A second conductive layer formed on the layer, wherein the surface of the photocatalytic conductive layer is conductive and has a region having higher wettability than the photocatalytic reaction layer. Features.

The semiconductor device of the present invention includes a gate electrode formed on a substrate, a first insulating layer formed on the gate electrode, and a first photocatalytic conductive layer formed on the first insulating layer. An organic semiconductor layer formed on the first insulating layer and the first photocatalytic conductive layer; a second insulating layer formed on the organic semiconductor layer; and the second insulating layer. The formed second photocatalytic conductive layer, the photocatalytic reaction layer formed on the second insulating layer and on the side surface of the second photocatalytic conductive layer, and the light emission formed on the second photocatalytic conductive layer A layer having a substance and a conductive layer formed on the layer having a light emitting substance, and the first photocatalytic conductive layer and the second photocatalytic conductive layer have conductivity, and A region having higher wettability than the photocatalytic reaction layer is formed.

In the semiconductor device or the method for manufacturing a semiconductor device of the present invention, the photocatalytic conductive layer is a layer having a photocatalytic property with a resistivity of 1 × 10 ⁻² Ωcm or less. As the photocatalytic conductive layer, a film containing indium tin oxide, a film containing a conductive material containing indium tin oxide containing silicon oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, fluorine A doped zinc oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, or a zinc oxide film can be used.

In the semiconductor device or the method for manufacturing a semiconductor device of the present invention, the photocatalytic reaction layer can be formed using a composition containing a compound having an alkyl group or a composition containing an organosilane.

According to the present invention, the photocatalytic conductive layer surface has conductivity by a simple method of irradiating the photocatalytic conductive layer with ultraviolet light and decomposing or altering the photocatalytic reaction layer formed on the photocatalytic conductive layer by a photocatalytic reaction, In addition, a region having higher wettability than the photocatalytic reaction layer can be formed. Therefore, regions having different wettability can be formed on the photocatalytic conductive layer without going through a complicated process. Therefore, adhesion between the photocatalytic conductive layer in a highly wettable region and the conductive material formed on the highly wettable region can be improved, and a highly reliable semiconductor device can be easily manufactured. Is possible.

Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, an example of a process for manufacturing an organic transistor by a droplet discharge method will be described with reference to drawings. Note that the droplet discharge method is a method in which a prepared composition is ejected from a nozzle in accordance with an electric signal to form a minute amount of droplet, and is attached to a predetermined position, and is also called an ink jet method.

First, the gate electrode 11 is formed over the substrate 10 (FIG. 1A). Substrate materials include glass substrates, quartz substrates, crystalline glass and other insulating substrates, ceramic substrates, stainless steel substrates, metal substrates (tantalum, tungsten, molybdenum, etc.), semiconductor substrates, plastic substrates (polyimide, acrylic, polyethylene) Terephthalate, polycarbonate, polyarylate, polyethersulfone, etc.), film, and the like can be used, but at least a material that can withstand the heat generated during the process is used. In this embodiment, a glass substrate is used.

The gate electrode 11 may be formed by processing a formed conductive material into a desired shape by photolithography. Alternatively, a droplet including a conductive material may be formed by a droplet discharge method or the like. Note that the manufacturing method of the gate electrode 11 of the present invention is not limited to this. The gate electrode may have a single-layer structure or a multi-layer structure in which two or more conductive materials are stacked. In the case of a plurality of layers, a conductive material may be selected as appropriate.

Next, an insulating layer 12 that covers the gate electrode 11 is formed (FIG. 1B). The insulating layer 12 can be formed using an insulating film containing silicon. For example, an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxide containing nitrogen, and silicon nitride containing oxygen may be used. In addition, an organic insulating material such as acrylic or polyimide, a skeleton structure is formed by a bond of silicon and oxygen, and as a substituent, an organic group containing at least hydrogen (for example, an alkyl group or aromatic hydrocarbon), or a fluoro group, Alternatively, it may be formed using a so-called siloxane material having at least an organic group containing hydrogen and a fluoro group, and the insulating film of the present invention is not limited to these materials. The insulating layer 12 may be a single layer or a plurality of layers composed of two or more layers. Further, in this embodiment, there is a step of inducing a photocatalytic reaction of the photocatalytic conductive layer by irradiating the photocatalytic conductive layer formed on the insulating layer 12 in the subsequent step with ultraviolet light using the gate electrode 11 as a mask. Accordingly, the material of the insulating layer 12 in this embodiment is not particularly limited as long as it does not completely block light having a wavelength that induces the photocatalytic reaction of the photocatalytic conductive layer.

The insulating layer 12 may be formed by a coating method such as a dipping method, a spin coating method, a droplet discharge method, a casting method, a spinner method, or a printing method, a CVD method, a sputtering method, or the like. Alternatively, the insulating layer 12 may be formed by oxidizing the gate electrode surface using an anodic oxidation method. Note that in the case where the insulating layer 12 is formed by a coating method using an organic insulating material or a siloxane-based material, the unevenness of the lower layer is reduced, and the wettability and orientation of the organic semiconductor layer 16 to be formed on the insulating layer 12 later are set. It can also be good.

Next, the photocatalytic conductive layer 13 is formed over the insulating layer 12 (FIG. 1C). The photocatalytic conductive layer is a conductive layer having a photocatalytic property that exhibits a photocatalytic reaction when irradiated with ultraviolet rays, and decomposes or alters the photocatalytic reaction layer formed on the photocatalytic conductive layer. In the present embodiment, as the photocatalytic conductive layer 13, a film having a photocatalytic property with a resistivity of 1 × 10 ⁻² Ωcm or less can be used. As the photocatalytic conductive layer, for example, a conductive film containing an indium tin oxide (ITO) -based, tin oxide (SnO) -based, or zinc oxide (ZnO) -based material can be used. Specifically, for example, a film containing indium tin oxide, a film containing a conductive material containing silicon oxide in ITO, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, a fluorine-doped zinc oxide film, An aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, a zinc oxide film, or the like can be used. Note that since an ITO-based conductive film has high conductivity and is easy to process, a highly reliable semiconductor device can be manufactured more easily by using an ITO-based conductive film. These materials can be formed over the insulating layer 12 by a sputtering method or the like.

Subsequently, a photocatalytic reaction layer (also referred to as a layer having low wettability) 14 is formed over the photocatalytic conductive layer 13 (FIG. 1C). As the photocatalytic reaction layer 14, a layer having low wettability with respect to a pattern material to be formed later is formed. The photocatalytic reaction layer 14 can be formed using a composition containing a compound having an alkyl group or a fluorocarbon chain.

An example of the composition of the photocatalytic reaction layer 14 is an organosilane represented by a chemical formula of Rn—Si—X _(4-n) (n = 1, 2, 3). R is a substance containing a relatively inactive group such as a fluoroalkyl group or an alkyl group. X consists of a hydroxyl group on the base surface or a hydrolyzable group capable of binding to adsorbed water. Representative examples of X include halogen, methoxy group, ethoxy group, acetoxy group and the like.

Further, as an example of an organic silane, alkoxysilane having an alkyl group in R can be used. As alkoxysilane, C2-C30 alkoxysilane is preferable. Typical examples include ethyltriethoxysilane, propyltriethoxysilane, octyltriethoxysilane, decyltriethoxysilane, octadecyltriethoxysilane (ODS), eicosyltriethoxysilane, and triacontyltriethoxysilane. Note that a silane compound having a long-chain alkyl group is preferable because wettability can be further reduced.

As an example of an organic silane, a fluoroalkylsilane having a fluoroalkyl group in R (hereinafter also referred to as FAS) can be used. Use of FAS is preferable because wettability can be further reduced. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. Typical FAS includes fluoroalkylsilanes (FAS) such as heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, and trifluoropropyltrimethoxysilane.

In addition, when forming the photocatalytic reaction layer 14 using the said material, it is good to form by carrying out the chemical adsorption of the said material on the photocatalyst conductive layer 13 surface by a gaseous-phase method. A monomolecular layer can be formed by chemical adsorption. Further, the above material may be formed using a droplet discharge method, a coating method, or the like.

When the photocatalytic reaction layer 14 is formed of a monomolecular layer, when a part of the photocatalytic reaction layer is decomposed later, it can be decomposed in a short time. Further, since the thickness is uniform, the photocatalytic reaction layer can be decomposed without variation. As a method for forming a monomolecular layer, a substrate is placed in a sealed container having an organic silane so that the organic silane is chemically adsorbed on the surface of the insulating layer and then washed with alcohol to form a monomolecular film. Can be formed. In addition, by immersing the substrate in a solution containing organosilane, the organosilane is chemically adsorbed on the surface of the insulating layer to form a monomolecular film, and a photocatalytic reaction layer can be formed.

Next, the photocatalytic reaction layer 14 is irradiated with ultraviolet light 17 from the substrate 10 side using the gate electrode 11 as a mask (FIG. 1D). By irradiating with ultraviolet light, the photocatalytic conductive layer 13 absorbs light and is activated. As a result, the bonds of the substances in the photocatalytic reaction layer 14 are dissociated, and a region 18 having high wettability is formed on the photocatalytic conductive layer 13 (FIG. 1D). Here, the surface of the photocatalytic conductive layer 13 has conductivity in the region 18 having high wettability. Moreover, in the area | region which was not irradiated with the light 17, the area | region with low wettability remains. Here, the remaining low wettability region is referred to as a low wettability layer 19. Here, the ultraviolet light is irradiated from the substrate 10 side, but is not necessarily limited, and the ultraviolet light may be irradiated from the photocatalytic reaction layer 14 side. In that case, light shielding may be performed using a separately prepared photomask, or light may be selectively irradiated using a laser direct drawing apparatus without using a mask.

As the ultraviolet light, light having a wavelength of about 350 nm or less can be used. Preferably, light having a wavelength of about 250 nm to 350 nm is used. By using light with a wavelength of about 250 nm to 350 nm, light absorption by oxygen or water in the air can be suppressed, and this step can be performed not only in a vacuum but also in the atmosphere.

Next, using a droplet discharge device, a pattern material 20 is applied over the conductive layer to form a mask layer (FIG. 2A). As the pattern material, a water-soluble resin such as PVA (polyvinyl alcohol), a photosensitive or non-photosensitive organic material such as polyimide, novolac, acrylic, polyamide or benzocyclobutene, or an organic resin such as siloxane may be used. it can. These materials can be selectively formed in a highly wettable region over the conductive layer by a droplet discharge method. Since it can be selectively formed only in a region having high wettability, waste of pattern material can be eliminated.

Next, using the pattern material 20 as a mask, a part of the photocatalytic conductive layer 13 is etched to form conductive layers 15a and 15b that function as a source electrode or a drain electrode (FIG. 2B).

Next, the pattern material 20 on the conductive layers 15a and 15b is removed, and the organic semiconductor layer 16 is formed over the conductive layers 15a and 15b and the insulating layer 12 (FIG. 2C). The organic semiconductor layer can be formed on the conductive layers 15a and 15b and the insulating layer 12 using a method such as an evaporation method, a spin coating method, or a droplet discharge method. In this embodiment, since the photocatalytic conductive layer has conductivity in the highly wettable region, the photocatalytic conductive layer is formed only by forming an organic semiconductor film on the highly wettable region of the photocatalytic conductive layer. And the organic semiconductor film can be secured. That is, by removing the pattern material 20, the highly wettable conductive layers 15a and 15b that function as the source electrode or the drain electrode in a self-aligning manner can be formed.

The organic semiconductor material forming the organic semiconductor layer 16 can be either a low molecular weight polymer or a high molecular weight material as long as it has carrier transport properties and can modulate the carrier density due to the electric field effect. The type is not particularly limited, but polycyclic aromatic compounds, conjugated double bond compounds, metal phthalocyanine complexes, charge transfer complexes, condensed ring tetracarboxylic acid diimides, oligothiophenes, fullerenes, carbon nanotubes, etc. Is mentioned. For example, polypyrrole, polythiophene, poly (3-alkylthiophene), polythienylene vinylene, poly (p-phenylene vinylene), polyaniline, polydiacetylene, polyazulene, polypyrene, polycarbazole, polyselenophene, polyfuran, poly (p-phenylene) , Polyindole, polypyridazine, naphthacene, hexacene, heptacene, pyrene, chrysene, perylene, coronene, terylene, obalene, quaterylene, anthracene, triphenodioxazine, triphenodithiazine, hexacene-6,15-quinone, polyvinylcarbazole, polyphenylene Sulfide, polyvinylene sulfide, polyvinyl pyridine, naphthalene tetracarboxylic acid diimide, anthracene tetracarboxylic acid diimide, C60, C70 C76, C78, C84 and can be used derivatives thereof. Specific examples of these include tetracene, pentacene, sexithiophene (6T), copper phthalocyanine, bis- (1,2,5-thiadiazolo) -p-quinobis (1, 3, -Dithiol), rubrene, poly (2,5-thienylenevinylene) (PTV), poly (3-hexylthiophene) (P3HT), dioctylfluorene-bithiophene copolymer (F8T2), generally N-type semiconductors 7,7,8,8, -tetracyanoquinodimethane (TCNQ), 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), 1,4,5,8, -naphthalenetetracarboxylic acid Dianhydride (NTCDA), 9,9,10,10-tetracyano-2,6-naphthoquinodimethane (TCNNQ), N, N′-dioctyl 3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C8H), copper hexadecafluorophthalocyanine _{(F 16 CuPc), 3 '} , 4'- dibutyl-5,5''- bis (dicyanomethylene) - 5,5 ″ -dihydro-2,2 ′: 5 ′, 2 ″ -terthiophene) (DCMT) and the like. Note that P-type and N-type characteristics in organic semiconductors are not unique to the substance, and depending on the relationship with the electrode for injecting carriers and the strength of the electric field at the time of injection, they tend to be either. It can be used as a P-type semiconductor or an N-type semiconductor.

Through the above steps, the organic transistor 527 can be completed.

Here, one mode of a droplet discharge apparatus used in the droplet discharge method is shown in FIG. The individual heads 1405 and 1412 of the droplet discharge means 1403 are connected to the control means 1407, and a pattern programmed in advance can be drawn by being controlled by the computer 1410. The drawing timing may be performed with reference to a marker 1411 formed on the substrate 1400, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by the imaging means 1404, converted into a digital signal by the image processing means 1409, is recognized by the computer 1410, a control signal is generated, and sent to the control means 1407. As the imaging unit 1404, a charge coupled device (CCD), an image sensor using a complementary metal oxide semiconductor, or the like can be used. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1408. Based on this information, a control signal is sent to the control means 1407, and each head 1405 of the droplet discharge means 1403 is sent. The heads 1412 can be individually controlled. The material to be discharged is supplied from the material supply source 1413 and the material supply source 1414 to the head 1405 and the head 1412 through piping.

The inside of the head 1405 has a structure having a space filled with a liquid material as indicated by a dotted line 1406 and a nozzle that is a discharge port. Although not shown, the head 1412 has the same internal structure as the head 1405. When the nozzles of the head 1405 and the head 1412 are provided in different sizes, different materials can be drawn simultaneously with different widths. With one head, conductive material, organic material, inorganic material, etc. can be discharged and drawn respectively. When drawing in a wide area like an interlayer film, the same material is used from multiple nozzles to improve throughput. It is possible to discharge and draw at the same time. In the case of using a large substrate, the head 1405 and the head 1412 can freely scan on the substrate in the direction of the arrow to freely set a drawing area, and a plurality of the same pattern can be drawn on a single substrate. it can.

Note that in the case of forming a conductive layer using a droplet discharge method, a conductive layer is formed by discharging a composition containing a conductive material that has been processed into particles, and fusing, fusing, and solidifying by firing. . In such a conductive layer (or insulating layer) formed by discharging and baking a composition containing a conductive material, the conductive layer (or insulating layer) formed by sputtering or the like is mostly a columnar structure. In many cases, a polycrystalline state having many grain boundaries is exhibited.

In this embodiment, a region having conductivity and high wettability is formed on the surface of the photocatalytic conductive layer by a simple method of irradiating the photocatalytic reaction layer formed on the photocatalytic conductive layer with ultraviolet light. Can do. Conventionally, since it is necessary to use a highly insulating material for the photocatalytic substance layer, a first conductive layer under the photocatalytic substance layer and a second conductive layer formed on the photocatalytic substance layer in a later step In order to achieve conduction, it is necessary to remove the insulating photocatalytic material layer formed on the first conductive layer, which increases the number of steps and makes it complicated. However, by using the method described in this embodiment, a region having conductivity and high wettability can be formed on the surface of the photocatalytic conductive layer without complicated steps, and in a self-aligned manner. A source electrode or a drain electrode can be formed. In addition, since a highly wettable region can be formed over the source or drain electrode, the adhesion between the organic semiconductor layer formed over the source or drain electrode and the source or drain electrode can be improved. it can. Therefore, a highly reliable organic transistor can be easily manufactured.

Note that the method for manufacturing a semiconductor device of the present invention is not limited to the method for manufacturing an organic transistor described in this embodiment mode, and a photocatalytic reaction layer is formed over a photocatalytic conductive layer, and ultraviolet light is applied to the photocatalytic reaction layer. For the production of various semiconductor devices including a step of forming a region having conductivity on the surface of the photocatalytic conductive layer in the region irradiated with ultraviolet light and having higher wettability than the photocatalytic reaction layer by irradiation. Can be used.

(Embodiment 2)
In this embodiment, an example of a method for manufacturing a light-emitting element using electroluminescence (EL) with a droplet discharge method will be described with reference to drawings.

Note that the light-emitting element can stack a light-emitting layer containing an organic compound or an inorganic compound having different carrier transport properties between a pair of electrodes, inject holes from one electrode, and inject electrons from the other electrode. A phenomenon in which holes injected from one electrode and electrons injected from the other electrode recombine to excite the emission center and emit light when it returns to the ground state. It is an element using The injectability of holes and electrons into the light-emitting layer is the magnitude of the work function of the material forming the electrode (the minimum energy required to extract one electron from the surface of a metal or semiconductor just outside the surface). A material having a high work function is preferable for the electrode on the hole injection side, and a material having a low work function is desired for the electrode on the electron injection side. In addition, when an organic compound material is used as at least the light emitting layer, it is called an organic EL element, and when an inorganic compound material is used as at least the light emitting layer, it is called an inorganic EL element. In addition, when both an organic compound material and an inorganic compound material are used for a light-emitting element, the element is called a hybrid EL element.

A method for manufacturing the light-emitting element of this embodiment will be described with reference to drawings.

First, as shown in FIG. 4A, a photocatalytic conductive layer 402 that functions as a pixel electrode is formed over a substrate 401. Note that as the photocatalytic conductive layer 402 functioning as a pixel electrode, a photocatalytic conductive layer similar to that shown in Embodiment Mode 1 can be used.

Next, the photocatalytic reaction layer 403 is formed over the photocatalytic conductive layer 402 (FIG. 4A). Note that the photocatalytic reaction layer 403 can be formed in the same manner as the photocatalytic reaction layer 14 described in Embodiment 1.

Subsequently, the photocatalytic reaction layer 403 is irradiated with ultraviolet light (FIG. 4B). By irradiating with ultraviolet light, the photocatalytic reaction layer 403 and the photocatalytic conductive layer 402 react to decompose or alter the photocatalytic reaction layer 403 on the surface of the photocatalytic conductive layer 402, and the portion irradiated with ultraviolet light has conductivity. In addition, the region 404 having high wettability can be formed. Note that the wettability of the photocatalytic reaction layer 403 in the region not in contact with the photocatalytic conductive layer 402 does not change, and remains with low wettability. Note that regions where wettability does not change that remain on the substrate 401 and on the side surfaces of the photocatalytic conductive layer 402 may be removed by etching or may remain.

Next, a layer 405 having a light-emitting substance is formed over the photocatalytic conductive layer 402 by using a droplet discharge device (FIG. 4C). By doing so, a layer having a light-emitting substance can be efficiently formed only in a region with high wettability on the surface of the photocatalytic conductive layer. Therefore, the luminescent substance is formed only on the photocatalytic conductive layer functioning as the pixel electrode without forming a bank insulator around the pixel electrode so that the light emitting layer is not formed in a portion other than the photocatalytic conductive layer functioning as the pixel electrode. A layer having can be formed. Therefore, a layer having a light-emitting substance can be easily formed only at a desired position, and material waste can be eliminated. In addition, since the photocatalytic conductive layer has conductivity and high wettability, a highly reliable light-emitting element with improved adhesion between the pixel electrode and the layer containing a light-emitting substance can be manufactured.

Next, a conductive layer 406 functioning as a counter electrode is formed over the layer 405 having a light-emitting substance (FIG. 4D). Subsequently, a protective film is preferably formed over the conductive layer 406. Note that in this embodiment mode, the photocatalytic reaction layer 403 remains on the substrate 401 and on the side surface of the photocatalytic conductive layer 402, so that a step formed between the photocatalytic conductive layer 402 and the substrate 401 can be reduced, and the luminescent substance The disconnection of the conductive layer 406 formed over the layer 405 including can be prevented.

Through the above steps, the light-emitting element 408 including the photocatalytic conductive layer 402, the light-emitting substance layer 405, and the conductive layer 406 can be formed.

In the present embodiment, by a simple method of irradiating the photocatalytic reaction layer formed on the photocatalytic conductive layer with ultraviolet light, the photocatalytic conductive layer surface has conductivity and is wettable as compared with the photocatalytic reaction layer. High region can be formed. Therefore, a light emitting material can be accurately formed using a droplet discharge device on the surface of the photocatalytic conductive layer functioning as a pixel electrode without going through a complicated process. In addition, a highly reliable light-emitting element with improved adhesion between the photocatalytic conductive layer functioning as a pixel electrode and a layer having a light-emitting substance can be easily manufactured. Thus, according to this embodiment, a light-emitting element with high emission efficiency and high reliability can be easily manufactured with high yield.

Next, an element structure in the case where an organic compound or an inorganic compound is used for a layer having a light-emitting substance of a light-emitting element will be described.

First, an organic EL element using an organic compound for a layer containing a light emitting substance will be described.

Examples of the light-emitting organic compound include 9,10-di (2-naphthyl) anthracene (abbreviation: DNA) and 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA). ), 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin 545T, perylene, rubrene, periflanthene, 2,5,8,11-tetra (Tert-butyl) perylene (abbreviation: TBP), 9,10-diphenylanthracene (abbreviation: DPA), 5,12-diphenyltetracene, 4- (dicyanomethylene) -2-methyl-6- [p- (dimethylamino) ) Styryl] -4H-pyran (abbreviation: DCM1), 4- (dicyanomethylene) -2-methyl-6- [2- Loridin-9-yl) ethenyl] -4H-pyran (abbreviation: DCM2), 4- (dicyanomethylene) -2,6-bis [p- (dimethylamino) styryl] -4H-pyran (abbreviation: BisDCM) and the like. Can be mentioned. In addition, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ² ] (picolinato) iridium (abbreviation: FIrpic), bis {2- [3 ′, 5′-bis (trifluoromethyl) Phenyl] pyridinato-N, C ² } (picolinato) iridium (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), Tris (2-phenylpyridinato-N, C ² ) iridium (abbreviation: Ir (ppy)) _3), (acetylacetonato) bis (2-phenylpyridinato--N, ^{C 2)} iridium (abbreviation: _Ir (ppy) 2 (acac)), (acetylacetonato) bis [2- (2'-thienyl ) pyridinato -N, ^{C 3]} iridium _{(abbreviation: Ir (thp) 2 (acac} )), ( acetylacetonato) bis (2-phenylquinolinato--N, ^{C 2)} iridium ( _Aka: such as 2 (acac)): Ir ( pq) 2 (acac)), (Ir (btp acetylacetonato) bis [2- (2'-benzothienyl) pyridinato -N, ^{C 3]} iridium (abbreviation) A compound capable of emitting phosphorescence can also be used.

As shown in FIG. 5A, a hole injection layer 341 formed of a hole injection material on the first conductive layer 201, a hole transport layer 342 formed of a hole transport material, A light-emitting layer 343 formed of a light-emitting organic compound, an electron transport layer 344 formed of an electron-transport material, a layer 203 containing a light-emitting substance formed of an electron injection layer 345 formed of an electron-inject material, and A light-emitting element may be formed using the second conductive layer 204.

The hole transporting material includes phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine (abbreviation: CuPc), vanadyl phthalocyanine (abbreviation: VOPc), and 4,4 ′, 4 ″ -tris (N, N-diphenyl). Amino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 1,3,5 -Tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'-biphenyl -4,4'-diamine (abbreviation: TPD), 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4'-bis {N- [ 4-di (m-tolyl) amino Phenyl-N-phenylamino} biphenyl (abbreviation: DNTPD), 4,4′-bis [N- (4-biphenylyl) -N-phenylamino] biphenyl (abbreviation: BBPB), 4,4 ′, 4 ″- Examples include tri (N-carbazolyl) triphenylamine (abbreviation: TCTA), but are not limited thereto. Among the above-mentioned compounds, aromatic amine compounds typified by TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, BBPB, TCTA, NPB and the like easily generate holes and are suitable as organic compounds. It is a compound group. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher.

As the hole injecting material, there is a material obtained by chemically doping a conductive polymer compound in addition to the above hole transporting material. Polyethylenedioxythiophene (abbreviation: PEDOT) doped with polystyrene sulfonic acid (abbreviation: PSS). ) And polyaniline (abbreviation: PAni) can also be used. In addition, a thin film of an inorganic semiconductor such as molybdenum oxide, vanadium oxide, nickel oxide (NiO _x ), or an ultrathin film of an inorganic insulator such as aluminum oxide (Al ₂ O ₃ ) is also effective.

Here, the electron transporting materials are tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h]. -Quinolinato) Beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc. Can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) A material such as a metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher.

Examples of the electron injection material include alkali metal halides such as LiF and CsF, alkaline earth halides such as CaF ₂ , and alkali metal oxides such as Li ₂ O in addition to the electron transport materials described above. Insulator ultrathin films are often used. In addition, alkali metal complexes such as lithium acetylacetonate (abbreviation: Li (acac) and 8-quinolinolato-lithium (abbreviation: Liq) are also effective. Further, the above-described electron transporting materials, Mg, Li, Cs, and the like It is also possible to use a material mixed with a metal having a small work function.

5B, the first conductive layer 201, a hole transport layer 346 formed of an organic compound and an inorganic compound having an electron accepting property with respect to the organic compound, and a light-emitting organic compound are used. A light-emitting layer 343 formed, a layer 203 containing a light-emitting substance formed by an electron-transport layer 347 formed of an inorganic compound having an electron-donating property with respect to a light-emitting organic compound, and a second conductive layer 204 A light emitting element may be formed.

The hole-transport layer 346 formed using a light-emitting organic compound and an inorganic compound having an electron-accepting property with respect to the light-emitting organic compound appropriately uses the above-described hole-transport organic compound as the organic compound. Form. The inorganic compound may be anything as long as it can easily receive electrons from an organic compound, and various metal oxides or metal nitrides can be used. Any one of Groups 4 to 12 of the periodic table can be used. These transition metal oxides are preferable because they easily exhibit electron accepting properties. Specific examples include titanium oxide, zirconium oxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide, and zinc oxide. Among the metal oxides described above, any of the transition metal oxides in Groups 4 to 8 of the periodic table has a high electron accepting property and is a preferred group.

The electron-transport layer 347 formed using a light-emitting organic compound and an inorganic compound having an electron-donating property with respect to the light-emitting organic compound is formed using the above-described electron-transport organic compound as appropriate as the organic compound. Further, the inorganic compound may be anything as long as it easily gives an electron to the organic compound, and various metal oxides or metal nitrides are possible, but alkali metal oxides, alkaline earth metal oxides, Rare earth metal oxides, alkali metal nitrides, alkaline earth metal nitrides, and rare earth metal nitrides are preferred because they easily exhibit electron donating properties. Specific examples include lithium oxide, strontium oxide, barium oxide, erbium oxide, lithium nitride, magnesium nitride, calcium nitride, yttrium nitride, and lanthanum nitride.

Since the electron transport layer 347 or the hole transport layer 346 formed of a light-emitting organic compound and an inorganic compound has excellent electron injection / transport characteristics, both the first conductive layer 201 and the second conductive layer 204 are Various materials can be used with almost no work function limitation. In addition, the driving voltage can be reduced.

Next, an inorganic EL element using an inorganic compound as a layer containing a light-emitting substance will be described.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has a layer containing a light emitting material in which particles of the light emitting material are dispersed in a binder, and the latter has a layer containing a light emitting material made of a thin film of the light emitting material. The common point is that electrons accelerated by an electric field are required. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In many cases, dispersion-type inorganic EL emits donor-acceptor recombination light emission, and thin-film inorganic EL element emits localized light emission. The structure of the inorganic EL element is shown below.

A light-emitting material that can be used in this embodiment mode includes a base material and an impurity element that serves as a light-emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

The solid phase method is a method in which a base material and an impurity element or a compound containing the impurity element are weighed, mixed in a mortar, heated and fired in an electric furnace, reacted, and the base material contains the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for a light-emitting material of an inorganic EL element, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), and the like can also be used, such as calcium sulfide-gallium sulfide (CaGa ₂ S ₄ ), strontium sulfide-gallium (SrGa ₂ S ₄ ), barium sulfide-gallium (BaGa). _It may be a ternary mixed crystal such as ₂ S ₄ ).

As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

On the other hand, a light-emitting material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used as the emission center of donor-acceptor recombination light emission. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. For example, copper (Cu), silver (Ag), or the like can be used as the second impurity element.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element Each compound containing an impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) etc. can be used. In addition, as the second impurity element or the compound containing the second impurity element, for example, copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), silver sulfide (Ag ₂ S), or the like is used. Can do. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound including the first impurity element and the second impurity element, for example, copper chloride (CuCl), silver chloride (AgCl), or the like can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

FIG. 5C illustrates a cross section of an inorganic EL element in which the layer 203 containing a light-emitting substance includes a first insulating layer 348, a light-emitting layer 349, and a second insulating layer 350.

In the case of a thin film type inorganic EL, the light emitting layer 349 is a layer containing the above light emitting substance, and chemical vapor deposition such as physical vapor deposition (PVD) such as sputtering, organometallic CVD, hydride transport low pressure CVD or the like. It can be formed using a method (CVD), an atomic layer epitaxy method (ALE), or the like.

The first insulating layer 348 and the second insulating layer 350 are not particularly limited. However, the first insulating layer 348 and the second insulating layer 350 have high insulation resistance, preferably have a dense film quality, and preferably have a high dielectric constant. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., a mixed film thereof, or two or more kinds thereof Lamination can be used. The first insulating layer 348 and the second insulating layer 350 can be formed by sputtering, CVD, or the like. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. Note that the light-emitting element of this embodiment mode does not necessarily require hot electrons, and thus can be formed into a thin film and has an advantage that a driving voltage can be reduced. The film thickness is preferably 500 nm or less, more preferably 100 nm or less.

Note that although not illustrated, a buffer layer may be provided between the light-emitting layer 349 and the insulating layers 348 and 350 or between the light-emitting layer 349 and the conductive layers 201 and 204. This buffer layer has a role of facilitating carrier injection and suppressing mixing of both layers. The buffer layer is not particularly limited. For example, ZnS, ZnSe, ZnTe, CdS, SrS, BaS, or the like, which is a base material of the light emitting layer, or CuS, Cu ₂ S, or LiF that is an alkali halide is used. CaF ₂ , BaF ₂ , MgF ₂ or the like can be used.

In addition, as illustrated in FIG. 5D, the layer 203 containing a light-emitting substance may be formed using a light-emitting layer 349 and a first insulating layer 348. In this case, FIG. 5D illustrates a mode in which the first insulating layer 348 is provided between the second conductive layer 204 and the light-emitting layer 349. Note that the first insulating layer 348 may be provided between the first conductive layer 201 and the light-emitting layer 349.

Further, the layer 203 containing a light-emitting substance may be formed using only the light-emitting layer 349. That is, a light-emitting element may be formed using the first conductive layer 201, the layer 203 containing a light-emitting substance, and the second conductive layer 204.

In the case of a dispersion type inorganic EL, a particulate luminescent material is dispersed in a binder to form a layer containing a film-like luminescent substance. Process into particles. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. The binder is a substance for fixing a granular light emitting material in a dispersed state and holding it in a shape as a layer containing a light emitting substance. The light emitting material is uniformly dispersed and fixed in the layer containing the light emitting substance by the binder.

In the case of a dispersion-type inorganic EL, a method for forming a layer containing a light-emitting substance includes a droplet discharge method that can selectively form a layer containing a light-emitting substance, a printing method (such as screen printing or offset printing), and a spin coating method. An application method, a dipping method, a dispenser method, or the like can also be used. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the layer including a light-emitting material and a light-emitting substance including a binder, the ratio of the light-emitting material may be 50 wt% or more and 80 wt% or less.

The element in FIG. 5E includes a first conductive layer 201, a layer 203 containing a light-emitting substance, and a second conductive layer 204. In the layer 203 containing a light-emitting substance, a light-emitting material 352 is dispersed in a binder 351. A light emitting layer and an insulating layer 348. Note that although the insulating layer 348 is in contact with the second conductive layer 204 in FIG. 5E, the insulating layer 348 may be in contact with the first conductive layer 201. The element may include an insulating layer in contact with each of the first conductive layer 201 and the second conductive layer 204. Further, the element does not need to include an insulating layer in contact with the first conductive layer 201 and the second conductive layer 204.

As a binder that can be used in this embodiment, an insulating material such as an organic material or an inorganic material can be used. Further, a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant, such as a cyanoethyl cellulose resin, or a resin such as a polyethylene resin, a polypropylene resin, a polystyrene resin, a silicone resin, an epoxy resin, or vinylidene fluoride is used. Can do. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. Moreover, a photocuring type etc. can be used. The dielectric constant can also be adjusted by appropriately mixing fine particles having a high dielectric constant such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ) with these resins.

Examples of the inorganic insulating material used for the binder include silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, or aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KNbO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), A material selected from substances including barium tantalate (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y ₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS and other inorganic insulating materials. Can be formed. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the layer containing the light emitting material including the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. Can do.

In the manufacturing process, the light-emitting material is dispersed in a solution containing a binder, but as a solvent of the solution containing the binder that can be used in this embodiment mode, a method of forming a light-emitting layer by dissolving the binder material (various wet types A solvent capable of producing a solution having a viscosity suitable for the process) and a desired film thickness may be appropriately selected. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB) can be used. Etc. can be used.

Inorganic EL light-emitting elements can emit light by applying voltage between a pair of electrodes sandwiching a layer containing a light-emitting substance, but can operate in either direct current drive or alternating current drive.

Here, as a light-emitting element that displays red, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. As the light-emitting layer, DNTPD is added to 50 nm, NPB is added to 10 nm, and bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (acetylacetonate) (abbreviation: Ir (Fdpq) ₂ (acac)) is added. The NPB is formed by stacking 30 nm, Alq ₃ by 30 nm, and LiF by 1 nm. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

As a light-emitting element that displays green, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. Further, as the light emitting layer, a 50 nm, 10 nm and NPB, coumarin 545T (C545T) 40 nm of Alq ₃ that is added to form a Alq ₃ 30 nm, and LiF was 1nm laminated DNTPD. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

As a light-emitting element that displays blue, an ITO layer containing silicon oxide with a thickness of 125 nm is formed as the second conductive layer functioning as the first pixel electrode. 9- [4- (N-carbazolyl)] added with 50 nm of DNTPD, 10 nm of NPB, 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP) as a light emitting layer phenyl-10-phenyl anthracene (abbreviation: CzPA :) to 30 nm, formed by the Alq ₃ 30 nm, and LiF was 1nm laminated. As the third conductive layer functioning as the second pixel electrode, an Al layer having a thickness of 200 nm is formed.

By using the manufacturing process of this embodiment mode, wettability over the photocatalytic conductive layer functioning as a pixel electrode can be improved; thus, adhesion between the pixel electrode and the light-emitting layer is improved, and light emission with high reliability is achieved. An element can be manufactured. In addition, since a highly wettable region can be formed on the photocatalytic conductive layer functioning as a pixel electrode by irradiation with ultraviolet light, a highly reliable light-emitting element can be easily manufactured without complicated processes. be able to.

(Embodiment 3)
In this embodiment mode, a process of forming a region having different wettability over a substrate and forming a convex conductive layer in the region having high wettability is described with reference to drawings.

First, the first conductive layer 101 is formed over the substrate 100 (FIG. 6A).

As the substrate 100, a glass substrate, a quartz substrate, a plastic substrate, a substrate formed of an insulating material such as ceramic such as alumina, a silicon wafer, a metal plate, or the like can be used. Typical examples of plastic substrates include polyethylene naphthalate (PEN), polyethersulfone (PES), polypropylene, polypropylene sulfide, polycarbonate (PC), polyphenylene sulfide, polyphenylene oxide, polyethylene terephthalate (PET), or polyphthalamide. , Nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), plastic substrate made of polyimide, inorganic particles with a diameter of several nm are dispersed And a substrate formed of the organic material formed. Further, the substrate 100 may be flexible.

Note that the first conductive layer 101 can be the same as the photocatalytic conductive layer 13 described in Embodiment 1.

Subsequently, the photocatalytic reaction layer 102 is formed on the first conductive layer. As the photocatalytic reaction layer 102, the same one as the photocatalytic reaction layer 14 described in Embodiment 1 can be used.

Next, the photocatalytic reaction layer 102 is irradiated with ultraviolet light 104 using a photomask 103. Accordingly, a region 112 having conductivity and high wettability can be formed in the region irradiated with ultraviolet light (FIG. 6B). Note that a region where the wettability is not changed without being irradiated with the ultraviolet light 104 is referred to as a region 111 with low wettability.

Next, after discharging a composition having conductive particles (hereinafter referred to as a conductive paste) to a region with high wettability, the conductive layer (pillar) 121 is formed of a conductive material by drying and baking. Form. The convex conductive layers (pillars) 121 are stacked by repeating discharge and baking of the conductive paste (FIG. 6C). The convex conductive layer (pillar) functions as a conductive layer (multilayer wiring).

As the conductive paste, one obtained by dissolving or dispersing conductive particles having a diameter of several nanometers to several micrometers in an organic resin is used. The conductive particles include at least one of Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, and Ba. Grains, silver halide grains, etc., or dispersible nanoparticles can be used. Further, a convex conductive layer (pillar) 121 can be formed by stacking these materials. As the organic resin, one or more selected from organic resins that function as a binder, a solvent, a dispersant, and a coating agent for metal particles can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given.

The conductive paste is applied to the highly wettable region 112 by a droplet discharge method or the like. The convex conductive layer (pillar) is formed by three-dimensionally overlapping conductive particles irregularly. That is, it is composed of three-dimensional aggregate particles. For this reason, the surface has fine unevenness. Further, depending on the heating temperature and the time of the conductive paste, the conductive particles melt and become an aggregate of conductive particles. Since the size of the aggregate at this time increases depending on the heating temperature and time of the conductive paste, it becomes a layer having a large surface level difference. Note that the region where the conductive particles are melted may have a polycrystalline structure.

Moreover, the binder formed with an organic substance remains in the conductive layer depending on the heating temperature, atmosphere, and time. In addition, a composition having silver particles having a diameter of several nm to several tens of nm is used as the conductive paste.

Note that since the layer having low wettability is formed in the outer extension of the discharge region of the conductive paste, the conductive paste does not spread out and the pillar diameter can be controlled to a uniform width. As a result, a convex conductive layer (pillar) 121 made of a conductive material with little variation can be formed.

Next, the region 111 with low wettability is irradiated with a laser or light 224 (FIG. 6D). When the region 111 with low wettability is exposed, the bond of the substance is dissociated by the energy of light, so that the region 131 with high wettability is formed over the first conductive layer 101 (FIG. 6E). Note that it is not always necessary to change the wettability of the low wettability region 111 by irradiating the low wettability region 111 with light.

Here, when FAS is used as the photocatalytic reaction layer, ultraviolet light is irradiated as the light 224 for decomposing FAS bonds. Note that in that case, oxygen is preferably filled between the low wettability region 111 and the lamp. By irradiating oxygen with ultraviolet light, ozone is generated and FAS bonds can be more easily decomposed.

Next, a convex conductive layer (pillar) 121 is embedded by a coating method or the like, and an interlayer insulating film 160 is formed so that the top is exposed. Alternatively, after the interlayer insulating film 160 is formed so as to cover the convex conductive layer (pillar) 121, the top portion may be exposed. As the interlayer insulating film formed here, a so-called coated silicon oxide film (Spin on Glass, “Spin on Glass,” in which an organic resin such as acrylic or polyimide, an insulating film material dissolved in an organic solvent is applied and then a heat treatment is formed. SOG "), and a material that forms a siloxane bond by firing a siloxane polymer or the like. The interlayer insulating film 160 is not limited to a coating method, and an inorganic insulating film such as a silicon oxide film formed by a vapor deposition method or a sputtering method can also be used. Alternatively, a silicon nitride film may be formed as a protective film by a PCVD method or a sputtering method, and then an insulating film may be stacked by a coating method.

Alternatively, the interlayer insulating film 160 may be formed by a droplet discharge method. Alternatively, the interlayer insulating film 160 may be formed by a droplet discharge method before firing the convex conductive layer (pillar) 121 and simultaneously fired. Further, the interlayer insulating film 160 may be planarized.

Note that when the interlayer insulating film 160 is formed by a coating method or a droplet discharge method, it is preferable to perform the main baking after flattening micro unevenness on the surface with an air knife instead of a squeegee.

Next, the interlayer insulating film on the convex conductive layer (pillar) 121 is removed by etching back the entire surface to expose the convex conductive layer (pillar) 121. As another method, the convex insulating layer (pillar) 121 is exposed by grinding the interlayer insulating film by chemical mechanical polishing (CMP) and then etching back the entire surface of the interlayer insulating film. Can do.

Next, a second conductive layer (conductor) 170 in contact with the convex conductive layer (pillar) 121 is formed over the interlayer insulating film 160 (FIG. 6F). A predetermined pattern made of a composition containing indium tin oxide (ITO), indium tin oxide containing silicon oxide, zinc oxide (ZnO), tin oxide (SnO ₂ ), or the like is formed by a droplet discharge method or a printing method. It may be formed and fired to form the second conductive layer. Further, it can also be formed by a droplet discharge method using a composition containing metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum) as a main component. . As another method, a transparent conductive film or a light reflective conductive film may be formed by a sputtering method, a mask pattern may be formed by a droplet discharge method, and etching may be combined.

In this embodiment mode, a photocatalytic reaction layer is formed on a film containing a conductive material containing silicon oxide in ITO, and at least the layer containing the conductive material is irradiated with ultraviolet light. It is possible to form a region having conductivity on the surface of the film containing the conductive material containing, and having higher wettability than the photocatalytic reaction layer. Therefore, a convex conductive layer (multilayer wiring) that connects the first conductive layer and the second conductive layer can be formed with high accuracy without going through a complicated process. In addition, an element with improved adhesion between the first conductive layer and the convex conductive layer (multilayer wiring) can be easily manufactured. Thus, according to this embodiment, a highly reliable semiconductor device can be easily manufactured.

(Embodiment 4)
In this embodiment mode, a manufacturing process of a display device including the organic transistor described in Embodiment Mode 1 will be described.

First, the organic transistor 527 is formed on the substrate 10 (FIG. 7). The organic transistor 527 can be formed in a manner similar to that in Embodiment 1.

Subsequently, an insulating layer 528 covering the organic transistor 527 is formed. Note that as the insulating layer 528, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, other inorganic insulating materials, acrylic acid, methacrylic acid, and derivatives thereof, or polyimide (polyimide) Si—O— among compounds consisting of silicon, oxygen, and hydrogen formed from a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or a siloxane polymer-based material typified by silica glass. Inorganic siloxane polymers containing Si bonds, alkyl siloxane polymers, alkyl silsesquioxane polymers, hydrogenated silsesquioxane polymers, hydrogenated alkyl silsesquioxane polymers such as hydrogen on silicon are methyl and phenyl. It may be an organic siloxane polymer based insulating material which is substituted by an organic group such as. As a forming method, a CVD method, a coating method, a printing method, or the like is used. Note that the surface of the insulating layer can be planarized by the application method.

Next, a contact hole that exposes the conductive layer 15 b is formed in the insulating layer 528. Then, a conductive layer 529 is formed over the insulating layer, and a pixel electrode connected to the conductive layer 15b functioning as a source electrode or a drain electrode through a contact hole is formed. As the conductive layer 529, a transparent electrode that transmits light or a reflective electrode that reflects light can be used. In the case of a transparent electrode, for example, an indium tin oxide (ITO) film in which tin oxide is mixed with tin oxide, an indium tin silicon oxide (ITSO) film in which silicon oxide is mixed in indium tin oxide (ITO), indium oxide An indium zinc oxide (IZO) film, a zinc oxide film, a tin oxide film, or the like in which zinc oxide is mixed can be used. Note that IZO is a transparent conductive material formed by sputtering using a target in which 2 to 20 wt% of zinc oxide (ZnO) is mixed with ITO, but is not limited thereto. In the case of a reflective electrode, for example, Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, Au, Pt, Nb, Si, Zn, Fe, Ba, Ge, or an alloy thereof is used. Can do. Alternatively, a two-layer structure in which Ti, Mo, Ta, Cr, W and Al are stacked, or a three-layer structure in which Al is sandwiched between metals such as Ti, Mo, Ta, Cr, and W may be used. The conductive layer 529 can be formed using these materials by a photolithography method, an inkjet method, a printing method, or the like.

Then, the liquid crystal layer 534 is sandwiched between the counter electrode 532 formed over the counter substrate 531 and the conductive layer 529 functioning as a pixel electrode, and the counter electrode 532 on the side in contact with the liquid crystal layer 534 and the conductive layer 529 functioning as the pixel electrode are provided. A liquid crystal display device is completed by providing alignment films 533 and 530 on the surface of the film, respectively.

Note that the cell gap of the liquid crystal layer 534 is maintained by the spacer 535. The configuration of the liquid crystal display device is not particularly limited. Although not shown, the substrate 10 and the counter substrate 531 are bonded with a sealing material. Note that the type of the liquid crystal layer 534 is not particularly limited and can be freely used. For example, a ferroelectric liquid crystal or an anti-ferroelectric liquid crystal may be used as the liquid crystal layer 534. The driving method of the liquid crystal may be TN (Twisted Nematic) mode, MVA (Multi-domain Vertical Alignment) mode, ASM (Axial Symmetrical Aligned Micro-cell) mode, OCB (Optical Bend). it can.

Note that the display device is not limited to a liquid crystal display device, and can be applied to an EL display device. A structure of the EL display device is described with reference to FIG.

An organic transistor 527 formed over the substrate 10 is covered with an insulating layer 528, and a conductive layer 15b functioning as a part of a source electrode or a drain electrode through a contact hole and a conductive layer 529 serving as a first electrode. And are electrically connected. An end portion of the conductive layer 529 to be the first electrode is covered with an insulating layer 611, and a light emitting layer 612 is formed so as to cover a portion exposed from the insulating layer 611. A second electrode 613 and a passivation film 614 are formed over the light emitting layer 612. Note that the light-emitting layer 612 is isolated from the outside air by sealing the substrate 10 and the counter substrate 615 with a sealant (not shown) outside the pixel portion. The space 616 between the counter substrate 615 and the substrate 10 may be filled with an inert gas such as dry nitrogen, or sealing is performed by filling the space 616 with resin or the like instead of the sealing material. Also good. Note that there is no particular limitation on the configuration of the EL display device.

Although not shown here, a conductive layer 529 serving as a first electrode is formed using a photocatalytic conductive layer material, a photocatalytic reaction layer is formed on the photocatalytic conductive layer, and ultraviolet light is irradiated to irradiate the surface of the conductive layer 529. The wettability may be improved. Accordingly, adhesion between the conductive layer 529 and the light-emitting layer 612 can be improved.

Next, an EL display device having a structure different from that in FIG. 8A will be described with reference to FIG. 8B, the organic transistor 527 is formed over the substrate 10, the insulating layer 528 is formed over the organic transistor 527, the insulating layer 611 is formed over the insulating layer 528, and the insulating layer A conductive layer 529 to be a first electrode is formed over 611. Further, the conductive layer 15b functioning as a part of the source electrode or the drain electrode of the organic transistor 527 and the conductive layer 529 serving as the first electrode are electrically connected through a contact hole formed in the insulating layer 611. ing. Note that in FIG. 8B, a photocatalytic reaction layer 617 is formed over the insulating layer 611 and the side surface of the conductive layer 529 to be the first electrode. A light emitting layer 612 is selectively formed only over the conductive layer 529 to be the first electrode. A second electrode 613 and a passivation film 614 are formed over the light emitting layer 612 and the photocatalytic reaction layer 617. Note that the light-emitting layer 612 is isolated from the outside air by sealing the substrate 10 and the counter substrate 615 with a sealant (not shown) outside the pixel portion. The space 616 between the counter substrate 615 and the substrate 10 may be filled with an inert gas such as dry nitrogen, or sealing is performed by filling the space 616 with resin or the like instead of the sealing material. Also good. Note that there is no particular limitation on the configuration of the EL display device.

Note that in FIG. 8B, the conductive layer 529 to be the first electrode is formed using a photocatalytic conductive layer material, a photocatalytic reaction layer is formed over the photocatalytic conductive layer, and the surface of the conductive layer 529 is irradiated with ultraviolet light. It has undergone a process of improving the wettability. Accordingly, adhesion between the conductive layer 529 and the light-emitting layer 612 can be improved. Further, since the photocatalytic reaction layer remains on the insulating layer 611 and on the side surface of the conductive layer 529, a step formed between the conductive layer 529 and the insulating layer 611 can be reduced, and the first layer formed over the light-emitting layer 612 can be reduced. The disconnection of the second electrode 613 can be prevented.

Since the organic transistor 527 of this embodiment uses the manufacturing process described in Embodiment 1, a highly reliable display device can be easily manufactured without complicated processes.

(Embodiment 5)
As electronic devices including the semiconductor device described in any of the above embodiments, a television device (also simply referred to as a television or a television receiver), a camera such as a digital camera or a digital video camera, or a mobile phone device (simply a mobile phone or a mobile phone) (Also called a telephone), portable information terminals such as PDAs, portable game machines, computer monitors, computers, sound reproduction apparatuses such as car audio, and image reproduction apparatuses equipped with recording media such as home game machines. . A specific example will be described with reference to FIG.

A portable information terminal illustrated in FIG. 9A includes a main body 9201, a display portion 9202, and the like. By applying the display portion 9202 to the one described in the above embodiment, a high-performance portable information terminal can be easily manufactured.

A digital video camera shown in FIG. 9B includes a display portion 9701, a display portion 9702, and the like. By applying the display portion 9701 to any of the above embodiments, a high-performance digital video camera can be easily manufactured.

A portable terminal illustrated in FIG. 9C includes a main body 9101, a display portion 9102, and the like. By applying the display portion 9102 to any of the above embodiments, a high-performance portable terminal can be easily manufactured.

A portable television device illustrated in FIG. 9D includes a main body 9301, a display portion 9302, and the like. By applying the display portion 9302 to the one described in the above embodiment, a high-performance portable television device can be easily manufactured. Such a television device can be widely applied from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). .

A portable computer shown in FIG. 9E includes a main body 9401, a display portion 9402, and the like. By applying the display portion 9402 to any of the above embodiments, a high-performance portable computer can be easily manufactured.

A television device illustrated in FIG. 9F includes a main body 9601, a display portion 9602, and the like. By applying the display portion 9602 to the display portion 9602, a high-performance television device can be easily manufactured.

Here, the configuration of the television device will be described with reference to FIG.

FIG. 10 is a block diagram illustrating a main configuration of the television device. A tuner 9511 receives a video signal and an audio signal. The video signal includes a video detection circuit 9512, a video signal processing circuit 9513 that converts the signal output from the video signal into a color signal corresponding to each color of red, green, and blue, and converts the video signal into the input specifications of the driver IC. Is processed by a control circuit 9514. The control circuit 9514 outputs signals to the scan line driver circuit 9516 and the signal line driver circuit 9517 of the display panel 9515, respectively. In the case of digital driving, a signal dividing circuit 9518 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

In FIG. 10, among the signals received by the tuner 9511, the audio signal is sent to the audio detection circuit 9521, and the output is supplied to the speaker 9523 through the audio signal processing circuit 9522. The control circuit 9524 receives control information on the receiving station (reception frequency) and volume from the input unit 9525 and sends a signal to the tuner 9511 and the audio signal processing circuit 9522.

This television device includes the semiconductor device described in any of the above embodiments, so that a high-performance television device can be easily manufactured.

Note that the present invention is not limited to a television receiver, and is applicable to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

In this example, when the FAS film is formed on the glass substrate and irradiated with ultraviolet light, the change in the contact angle of the substrate surface with time, the film containing a conductive material containing silicon oxide in ITO on the glass substrate surface, and The experimental results of measuring the time change of the contact angle of the substrate surface when the FAS film is formed and irradiated with ultraviolet light will be described. In addition, the contact angle measured the contact angle with respect to water.

First, Sample 1 in which an FAS film is formed on a glass substrate, and Sample 2 in which a film containing a conductive material containing silicon oxide in ITO having a thickness of 110 nm is formed on a glass substrate, and an FAS film is formed thereon. Prepared. Next, each of the FAS films of Sample 1 and Sample 2 was irradiated with ultraviolet light. And the change of the contact angle with respect to the water of the substrate surface when the irradiation time of ultraviolet light was changed was measured.

In FIG. 11, the graph which shows the time change of the contact angle of the sample 1 and the sample 2 is shown. Here, the vertical axis represents the contact angle with water. The horizontal axis represents the irradiation time of the ultraviolet light to the sample 1 and the sample 2. In FIG. 11, the smaller the contact angle with water, the higher the wettability of the substrate surface. In FIG. 11, the cross-hatched plot shows the change in the contact angle of the sample 1, and the white triangle mark plot shows the change in the contact angle of the sample 2.

From FIG. 11, it can be seen that the contact angle hardly changes in the sample 1 regardless of the change in the irradiation time of the ultraviolet light. On the other hand, in sample 2, the contact angle becomes smaller and the wettability is improved as the irradiation time of ultraviolet light is increased. Therefore, it can be seen that wettability is improved by forming a FAS film on a film containing a conductive material containing silicon oxide in ITO and irradiating with ultraviolet light.

Therefore, a film containing a conductive material containing ITO in silicon oxide is formed as a photocatalytic conductive layer, a FAS film is formed as a photocatalytic reaction layer on the photocatalytic conductive layer, and at least the surface of the photocatalytic conductive layer is irradiated with ultraviolet light By doing so, it is considered that the wettability of the film surface containing a conductive material containing silicon oxide in ITO can be improved in the portion irradiated with ultraviolet light. Therefore, it is possible to form regions having different wettability on the photocatalytic conductive layer by providing a region on the photocatalytic conductive layer that is selectively irradiated with ultraviolet rays or a region that is not irradiated with ultraviolet rays. Further, the surface of the photocatalytic conductive layer in the region irradiated with ultraviolet rays is a region having conductivity and high wettability. Therefore, when a semiconductor device having a step of connecting layers including two conductive materials is manufactured, the photocatalytic conductive layer and a conductive material formed on the region with high wettability are used by using the above method. Thus, it is possible to easily manufacture a highly reliable semiconductor device.

10A and 10B illustrate a manufacturing process of an organic transistor using a photocatalytic conductive layer and a photocatalytic reaction layer. 10A and 10B illustrate a manufacturing process of an organic transistor using a photocatalytic conductive layer and a photocatalytic reaction layer. FIG. 6 illustrates an example of a droplet discharge device. 10A and 10B illustrate a manufacturing process of a light-emitting element using a photocatalytic conductive layer and a photocatalytic reaction layer. 4A and 4B illustrate a structure of a light-emitting element. The figure explaining the process of forming a convex-shaped conductive layer using a photocatalyst conductive layer and a photocatalyst reaction layer. 8A and 8B illustrate a structure example of a liquid crystal display device. 8A and 8B illustrate a structure example of an EL display device. 10A and 10B each illustrate an example of an electronic device. 10A and 10B each illustrate an example of an electronic device. The figure explaining the experimental result about the time change of a contact angle.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 11 Gate electrode 12 Insulating layer 13 Photocatalytic conductive layer 14 Photocatalytic reaction layer 15 Conductive layer 16 Organic semiconductor layer 17 Ultraviolet light 18 Region 19 layer

Claims (15)

Forming a photocatalytic conductive layer on the substrate;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
A surface of the photocatalytic reaction layer is irradiated with ultraviolet light, and a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer is formed. Manufacturing method. Forming a gate electrode on the substrate;
Forming an insulating layer on the gate electrode;
Forming a photocatalytic conductive layer on the insulating layer;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer,
Forming a mask layer by discharging a liquid pattern material to the high wettability region,
Etching the photocatalytic conductive layer using the mask layer to form a first conductive layer and a second conductive layer;
A method for manufacturing a semiconductor device, comprising forming an organic semiconductor layer so as to cover at least part of the first conductive layer and the second conductive layer. Forming a photocatalytic conductive layer on the substrate;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer,
A liquid luminescent material is ejected onto the highly wettable region to form a layer having a luminescent material,
A method for manufacturing a semiconductor device, wherein a conductive layer is formed over the layer including the light-emitting substance. Forming a photocatalytic conductive layer on the substrate;
Forming a photocatalytic reaction layer on the photocatalytic conductive layer,
Irradiating the surface of the photocatalytic reaction layer with ultraviolet light, forming a region having conductivity on the surface of the photocatalytic conductive layer and having higher wettability than the photocatalytic reaction layer,
A convex conductive layer is formed by discharging a composition having liquid conductive particles in the highly wettable region, firing the discharged composition, and repeating application and firing of the composition. A method for manufacturing a semiconductor device. In any one of Claims 1 thru | or 4,
The method for manufacturing a semiconductor device, wherein the photocatalytic conductive layer is a layer having a resistivity of 1 × 10 ⁻² Ωcm or less and having photocatalytic properties. In any one of Claims 1 thru | or 5,
The photocatalytic conductive layer includes a film containing indium tin oxide, a film containing a conductive material containing silicon oxide in indium tin oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, and a fluorine-doped oxide film. A method for manufacturing a semiconductor device, which is a zinc film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, or a zinc oxide film. In any one of Claims 1 thru | or 6,
The method for manufacturing a semiconductor device, wherein the photocatalytic reaction layer is formed using a composition containing a compound having an alkyl group or a composition containing an organic silane. A photocatalytic conductive layer formed on the substrate;
A photocatalytic reaction layer formed on the substrate and on a side surface of the photocatalytic conductive layer;
A layer having a luminescent material formed on the photocatalytic conductive layer;
A conductive layer formed on the layer having the light emitting substance,
The semiconductor device characterized in that the surface of the photocatalytic conductive layer has conductivity and has a region having higher wettability than the photocatalytic reaction layer. A gate electrode formed on the substrate;
A first insulating layer formed on the gate electrode;
A first conductive layer formed on the first insulating layer;
An organic semiconductor layer formed on the first insulating layer and on the first conductive layer;
A second insulating layer formed on the organic semiconductor layer;
A photocatalytic conductive layer formed on the second insulating layer;
A photocatalytic reaction layer formed on the second insulating layer and on a side surface of the photocatalytic conductive layer;
A layer having a luminescent material formed on the photocatalytic conductive layer;
A second conductive layer formed on the layer having the luminescent material,
The semiconductor device characterized in that the photocatalytic conductive layer surface has conductivity and has a region having higher wettability than the photocatalytic reaction layer. In claim 8 or claim 9,
The photocatalytic conductive layer is a layer having a photocatalytic property with a resistivity of 1 × 10 ⁻² Ωcm or less. In any one of Claims 8 to 10,
The photocatalytic conductive layer includes a film containing indium tin oxide, a film containing a conductive material containing silicon oxide in indium tin oxide, a fluorine-doped tin oxide film, an antimony-doped tin oxide film, a tin oxide film, and a fluorine-doped oxide film. A semiconductor device comprising a zinc film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, or a zinc oxide film. A gate electrode formed on the substrate;
A first insulating layer formed on the gate electrode;
A first photocatalytic conductive layer formed on the first insulating layer;
An organic semiconductor layer formed on the first insulating layer and on the first photocatalytic conductive layer;
A second insulating layer formed on the organic semiconductor layer;
A second photocatalytic conductive layer formed on the second insulating layer;
A photocatalytic reaction layer formed on the second insulating layer and on a side surface of the second photocatalytic conductive layer;
A layer having a luminescent material formed on the second photocatalytic conductive layer;
A conductive layer formed on the layer having the light emitting substance,
The semiconductor device is characterized in that the first photocatalytic conductive layer and the surface of the second photocatalytic conductive layer are conductive and have a region having higher wettability than the photocatalytic reaction layer. In claim 12,
The first photocatalytic conductive layer and the second photocatalytic conductive layer are layers having a photocatalytic property with a resistivity of 1 × 10 ⁻² Ωcm or less. In claim 12 or claim 13,
The first photocatalytic conductive layer and the second photocatalytic conductive layer include a film containing indium tin oxide, a film containing a conductive material containing indium tin oxide containing silicon oxide, a fluorine-doped tin oxide film, and antimony doped. A semiconductor device comprising a tin oxide film, a tin oxide film, a fluorine-doped zinc oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a boron-doped zinc oxide film, or a zinc oxide film. In any one of Claims 8 to 14,
The photocatalytic reaction layer is formed using a composition including a compound including a compound having an alkyl group or a composition including an organosilane.

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