JP2009260346A5 - - Google Patents
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- Publication number
- JP2009260346A5 JP2009260346A5 JP2009094626A JP2009094626A JP2009260346A5 JP 2009260346 A5 JP2009260346 A5 JP 2009260346A5 JP 2009094626 A JP2009094626 A JP 2009094626A JP 2009094626 A JP2009094626 A JP 2009094626A JP 2009260346 A5 JP2009260346 A5 JP 2009260346A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- film transistor
- semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- 229910000077 silane Inorganic materials 0.000 claims 4
- 125000003545 alkoxy group Chemical group 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 2
- BNCXNUWGWUZTCN-UHFFFAOYSA-N trichloro(dodecyl)silane Chemical group CCCCCCCCCCCC[Si](Cl)(Cl)Cl BNCXNUWGWUZTCN-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/101,942 US7968871B2 (en) | 2008-04-11 | 2008-04-11 | Organic thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009260346A JP2009260346A (ja) | 2009-11-05 |
| JP2009260346A5 true JP2009260346A5 (enExample) | 2012-08-09 |
Family
ID=40810031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009094626A Pending JP2009260346A (ja) | 2008-04-11 | 2009-04-09 | 有機薄膜トランジスタ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7968871B2 (enExample) |
| EP (1) | EP2117059B1 (enExample) |
| JP (1) | JP2009260346A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7837903B2 (en) * | 2008-12-10 | 2010-11-23 | Xerox Corporation | Polythiophenes and electronic devices comprising the same |
| US8304512B2 (en) * | 2010-01-19 | 2012-11-06 | Xerox Corporation | Benzodithiophene based materials compositions |
| US9076975B2 (en) | 2010-04-27 | 2015-07-07 | Xerox Corporation | Dielectric composition for thin-film transistors |
| US8742403B2 (en) | 2011-03-08 | 2014-06-03 | Samsung Electronics Co., Ltd. | Xanthene based semiconductor compositions |
| US9136486B2 (en) * | 2011-12-26 | 2015-09-15 | Toagosei Co., Ltd. | Composition for organic semiconductor insulating films, and organic semiconductor insulating film |
| EP2693449B1 (en) | 2012-07-31 | 2017-11-15 | Nexans | Electric conductor element |
| US8569443B1 (en) | 2012-12-18 | 2013-10-29 | Xerox Corporation | Copolythiophene semiconductors for electronic device applications |
| CN105489762B (zh) * | 2016-01-29 | 2017-03-15 | 京东方科技集团股份有限公司 | 一种有机薄膜晶体管及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US6617609B2 (en) * | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
| ATE328050T1 (de) | 2002-04-24 | 2006-06-15 | Merck Patent Gmbh | Reaktive mesogene benzodithiophene |
| US7285440B2 (en) * | 2002-11-25 | 2007-10-23 | International Business Machines Corporation | Organic underlayers that improve the performance of organic semiconductors |
| DE10328810B4 (de) * | 2003-06-20 | 2005-10-20 | Infineon Technologies Ag | Syntheseverfahren für eine Verbindung zur Bildung einer selbstorganisierenden Monolage, Verbindung zur Bildung einer selbstorganisierenden Monolage und eine Schichtstruktur für ein Halbleiterbauelement |
| DE10328811B4 (de) * | 2003-06-20 | 2005-12-29 | Infineon Technologies Ag | Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur |
| DE602004024629D1 (de) | 2003-10-15 | 2010-01-28 | Merck Patent Gmbh | Polybenzodithiophene |
| US7435989B2 (en) * | 2005-09-06 | 2008-10-14 | Canon Kabushiki Kaisha | Semiconductor device with layer containing polysiloxane compound |
| KR100708720B1 (ko) * | 2005-10-19 | 2007-04-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치 |
| US8895692B2 (en) * | 2006-03-10 | 2014-11-25 | Sumitomo Chemical Company, Limited | Fused ring compound and method for producing same, polymer, organic thin film containing those, and organic thin film device and organic thin film transistor comprising such organic thin film |
| JP2007273594A (ja) * | 2006-03-30 | 2007-10-18 | Nippon Kayaku Co Ltd | 電界効果トランジスタ |
| JP2007294718A (ja) * | 2006-04-26 | 2007-11-08 | Konica Minolta Holdings Inc | 有機半導体膜及び有機薄膜トランジスタ |
| JP2008053265A (ja) * | 2006-08-22 | 2008-03-06 | Postech Foundation | 表面誘導自己集合による単結晶共役高分子ナノ構造体の製造方法 |
| CA2606985C (en) * | 2006-10-25 | 2011-02-01 | Xerox Corporation | Electronic devices |
| US7834132B2 (en) | 2006-10-25 | 2010-11-16 | Xerox Corporation | Electronic devices |
| KR101379616B1 (ko) * | 2007-07-31 | 2014-03-31 | 삼성전자주식회사 | 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법 |
-
2008
- 2008-04-11 US US12/101,942 patent/US7968871B2/en active Active
-
2009
- 2009-03-04 EP EP20090154333 patent/EP2117059B1/en active Active
- 2009-04-09 JP JP2009094626A patent/JP2009260346A/ja active Pending
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