JP2009260346A - 有機薄膜トランジスタ - Google Patents

有機薄膜トランジスタ Download PDF

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Publication number
JP2009260346A
JP2009260346A JP2009094626A JP2009094626A JP2009260346A JP 2009260346 A JP2009260346 A JP 2009260346A JP 2009094626 A JP2009094626 A JP 2009094626A JP 2009094626 A JP2009094626 A JP 2009094626A JP 2009260346 A JP2009260346 A JP 2009260346A
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JP
Japan
Prior art keywords
layer
alkyl
semiconductor
semiconductor layer
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009094626A
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English (en)
Japanese (ja)
Other versions
JP2009260346A5 (enExample
Inventor
Yiliang Wu
ウー イリアン
Hualong Pan
パン フアロン
Pin Liu
リウ ピン
Yuning Li
リ ユニン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2009260346A publication Critical patent/JP2009260346A/ja
Publication of JP2009260346A5 publication Critical patent/JP2009260346A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009094626A 2008-04-11 2009-04-09 有機薄膜トランジスタ Pending JP2009260346A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/101,942 US7968871B2 (en) 2008-04-11 2008-04-11 Organic thin film transistor

Publications (2)

Publication Number Publication Date
JP2009260346A true JP2009260346A (ja) 2009-11-05
JP2009260346A5 JP2009260346A5 (enExample) 2012-08-09

Family

ID=40810031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009094626A Pending JP2009260346A (ja) 2008-04-11 2009-04-09 有機薄膜トランジスタ

Country Status (3)

Country Link
US (1) US7968871B2 (enExample)
EP (1) EP2117059B1 (enExample)
JP (1) JP2009260346A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013099460A1 (ja) * 2011-12-26 2013-07-04 東亞合成株式会社 有機半導体絶縁膜用組成物及び有機半導体絶縁膜

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7837903B2 (en) * 2008-12-10 2010-11-23 Xerox Corporation Polythiophenes and electronic devices comprising the same
US8304512B2 (en) * 2010-01-19 2012-11-06 Xerox Corporation Benzodithiophene based materials compositions
US9076975B2 (en) 2010-04-27 2015-07-07 Xerox Corporation Dielectric composition for thin-film transistors
US8742403B2 (en) 2011-03-08 2014-06-03 Samsung Electronics Co., Ltd. Xanthene based semiconductor compositions
EP2693449B1 (en) 2012-07-31 2017-11-15 Nexans Electric conductor element
US8569443B1 (en) 2012-12-18 2013-10-29 Xerox Corporation Copolythiophene semiconductors for electronic device applications
CN105489762B (zh) * 2016-01-29 2017-03-15 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273594A (ja) * 2006-03-30 2007-10-18 Nippon Kayaku Co Ltd 電界効果トランジスタ
JP2007294718A (ja) * 2006-04-26 2007-11-08 Konica Minolta Holdings Inc 有機半導体膜及び有機薄膜トランジスタ
JP2008053265A (ja) * 2006-08-22 2008-03-06 Postech Foundation 表面誘導自己集合による単結晶共役高分子ナノ構造体の製造方法

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US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
DE60305570T2 (de) 2002-04-24 2007-05-03 Merck Patent Gmbh Reaktive mesogene Benzodithiophene
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
DE10328810B4 (de) * 2003-06-20 2005-10-20 Infineon Technologies Ag Syntheseverfahren für eine Verbindung zur Bildung einer selbstorganisierenden Monolage, Verbindung zur Bildung einer selbstorganisierenden Monolage und eine Schichtstruktur für ein Halbleiterbauelement
DE10328811B4 (de) * 2003-06-20 2005-12-29 Infineon Technologies Ag Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur
ATE452154T1 (de) 2003-10-15 2010-01-15 Merck Patent Gmbh Polybenzodithiophene
US7435989B2 (en) * 2005-09-06 2008-10-14 Canon Kabushiki Kaisha Semiconductor device with layer containing polysiloxane compound
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
EP2192123B1 (en) * 2006-03-10 2012-11-21 Sumitomo Chemical Company, Limited Fused tricyclic compounds useful in organic thin film devices such as transistors
CA2606985C (en) * 2006-10-25 2011-02-01 Xerox Corporation Electronic devices
US7834132B2 (en) 2006-10-25 2010-11-16 Xerox Corporation Electronic devices
KR101379616B1 (ko) * 2007-07-31 2014-03-31 삼성전자주식회사 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273594A (ja) * 2006-03-30 2007-10-18 Nippon Kayaku Co Ltd 電界効果トランジスタ
JP2007294718A (ja) * 2006-04-26 2007-11-08 Konica Minolta Holdings Inc 有機半導体膜及び有機薄膜トランジスタ
JP2008053265A (ja) * 2006-08-22 2008-03-06 Postech Foundation 表面誘導自己集合による単結晶共役高分子ナノ構造体の製造方法

Non-Patent Citations (3)

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Title
JPN6012030256; Ｈｕａｌｏｎｇ　Ｐａｎ　ｅｔ　ａｌ．: '"Ｌｏｗ-Ｔｅｍｐｅｒａｔｕｒｅ，　Ｓｏｌｕｔｉｏｎ-Ｐｒｏｃｅｓｓｅｄ，　Ｈｉｇｈ-Ｍｏｂｉｌｉｔｙ　Ｐｏｌｙｍｅｒ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ　ｆｏｒ　Ｔｈｉｎ-Ｆｉｌｍ　Ｔｒａｎｓｉｓｔｏｒ"' Ｊｏｕｒｎａｌ　ｏｆ　Ａｍｅｒｉｃａｎ　Ｃｈｅｍｉｃａｌ　Ｓｏｃｉｅｔｙ Ｖｏｌ．　１２９, 20070316, ｐｐ．　４１１２-４１１３, Ａｍｅｒｉｃａｎ　Ｃｈｅｍｉｃａｌ　Ｓｏｃｉｅｔｙ *
JPN6012037300; Ｈｕａｌｏｎｇ　Ｐａｎ　ｅｔ　ａｌ．: '"Ｓｙｎｔｈｅｓｉｓ　ａｎｄ　Ｔｈｉｎ-Ｆｉｌｍ　Ｔｒａｎｓｉｓｔｏｒ　Ｐｅｒｆｏｒｍａｎｃｅ　ｏｆ　Ｐｏｌｙ（４，８-ｄｉｄｏｄｅｃｙｌｂｅｎｚｏ［１，２-ｂ：４，５-ｂ'］ｄｉｔｈｉｏｐｈｅｎｅ）' Ｃｈｅｍｉｓｔｒｙ　ｏｆ　Ｍａｔｅｒｉａｌｓ Ｖｏｌ．１８, 20060706, ｐｐ．　３２３７-３２４１, Ａｍｅｒｉｃａｎ　Ｃｈｅｍｉｃａｌ　Ｓｏｃｉｅｔｙ *
JPN6012037303; Ｈｕａｌｏｎｇ　Ｐａｎ　ｅｔ　ａｌ．: '"Ｂｅｎｚｏｄｉｔｈｉｏｐｈｅｎｅ　Ｃｏｐｏｌｙｍｅｒ　-　Ａ　Ｌｏｗ-Ｔｅｍｐｅｒａｔｕｒｅ，　Ｓｏｌｕｔｉｏｎ-Ｐｒｏｃｅｓｓｅｄ　Ｈｉｇｈ-Ｐｅｒｆｏｒｍａｎｃｅ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ　ｆ' Ａｄｖａｎｃｅｄ　Ｆｕｎｃｔｉｏｎａｌ　Ｍａｔｅｒｉａｌｓ Ｖｏｌ．　１７, 2007, ｐｐ．　３５７４-３５７９, Ｗｉｌｅｙ-ＶＣＨ *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013099460A1 (ja) * 2011-12-26 2013-07-04 東亞合成株式会社 有機半導体絶縁膜用組成物及び有機半導体絶縁膜
CN103828062A (zh) * 2011-12-26 2014-05-28 东亚合成株式会社 有机半导体绝缘膜用组合物及有机半导体绝缘膜
JPWO2013099460A1 (ja) * 2011-12-26 2015-04-30 東亞合成株式会社 絶縁膜用組成物及び絶縁膜
US9136486B2 (en) 2011-12-26 2015-09-15 Toagosei Co., Ltd. Composition for organic semiconductor insulating films, and organic semiconductor insulating film
CN103828062B (zh) * 2011-12-26 2016-08-17 东亚合成株式会社 有机半导体绝缘膜用组合物及有机半导体绝缘膜
TWI570186B (zh) * 2011-12-26 2017-02-11 Toagosei Co A composition for an organic semiconductor insulating film, and an organic semiconductor insulating film

Also Published As

Publication number Publication date
EP2117059B1 (en) 2015-05-13
US20090256138A1 (en) 2009-10-15
US7968871B2 (en) 2011-06-28
EP2117059A2 (en) 2009-11-11
EP2117059A3 (en) 2011-03-02

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