JP2012119678A5 - - Google Patents
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- Publication number
- JP2012119678A5 JP2012119678A5 JP2011253263A JP2011253263A JP2012119678A5 JP 2012119678 A5 JP2012119678 A5 JP 2012119678A5 JP 2011253263 A JP2011253263 A JP 2011253263A JP 2011253263 A JP2011253263 A JP 2011253263A JP 2012119678 A5 JP2012119678 A5 JP 2012119678A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric material
- dielectric
- low
- poly
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (3)
- 基板の上に、誘電性材料と、低表面張力添加剤とを含む誘電性組成物を堆積させることと；
前記誘電性組成物を加熱し、前記基板の上に誘電層を作成することとを含み、
前記低表面張力添加剤は、ポリアクリレートで改質されたヒドロキシル官能化ポリシロキサンであることを特徴とする電子機器を製造するプロセス。 - 前記誘電性組成物は架橋剤を更に含むことを特徴とする請求項１記載の電子機器を製造するプロセス。
- 前記誘電性材料は、低ｋ誘電性材料と、高ｋ誘電性材料とを含み、前記低ｋ誘電性材料は、ポリ（メチルシルセスキオキサン）であり、前記高ｋ誘電性材料は、ポリ（ビニルフェノール）であることを特徴とする請求項１記載の電子機器を製造するプロセス。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/957,461 | 2010-12-01 | ||
| US12/957,461 US8821962B2 (en) | 2010-12-01 | 2010-12-01 | Method of forming dielectric layer with a dielectric composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012119678A JP2012119678A (ja) | 2012-06-21 |
| JP2012119678A5 true JP2012119678A5 (ja) | 2014-12-25 |
Family
ID=46152595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011253263A Pending JP2012119678A (ja) | 2010-12-01 | 2011-11-18 | 誘電性組成物 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8821962B2 (ja) |
| JP (1) | JP2012119678A (ja) |
| CN (1) | CN102487125B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6647780B2 (ja) * | 2014-10-27 | 2020-02-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 有機金属材料および方法 |
| GB2534600A (en) * | 2015-01-29 | 2016-08-03 | Cambridge Display Tech Ltd | Organic thin film transistors |
| WO2018060015A1 (en) | 2016-09-27 | 2018-04-05 | Basf Se | Star-shaped styrene polymers with enhanced glass transition temperature |
| CN107915910A (zh) * | 2017-11-15 | 2018-04-17 | 苏州科茂电子材料科技有限公司 | 添加聚异丁烯的介电材料制备方法 |
| US20200031040A1 (en) | 2018-07-24 | 2020-01-30 | Xerox Corporation | Printing process and system |
| CN113410384B (zh) * | 2021-06-28 | 2023-04-07 | 西南大学 | 一种用于柔性场效应晶体管的聚合物介电层的制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8418591D0 (en) * | 1984-07-20 | 1984-08-22 | Bp Chem Int Ltd | Polymer composition |
| JPH0618986B2 (ja) * | 1987-10-19 | 1994-03-16 | 信越化学工業株式会社 | 硬化性エポキシ樹脂組成物 |
| EP0461185A1 (en) * | 1989-03-01 | 1991-12-18 | Raychem Corporation | Method of curing organopolysiloxane compositions and compositions and articles therefrom |
| EP0695116B1 (en) * | 1994-07-29 | 2004-01-28 | World Properties, Inc. | Fluoropolymer composites containing two or more ceramic fillers to achieve independent control of dielectric constant and dimensional stability |
| DE19535603A1 (de) * | 1995-09-25 | 1997-03-27 | Basf Lacke & Farben | 3-Komponenten-Beschichtungsmittel mit hoher Lösemittelbeständigkeit und hoher Abklebfestigkeit |
| US6440642B1 (en) * | 1999-09-15 | 2002-08-27 | Shipley Company, L.L.C. | Dielectric composition |
| DE102004005247A1 (de) * | 2004-01-28 | 2005-09-01 | Infineon Technologies Ag | Imprint-Lithographieverfahren |
| WO2006009942A1 (en) * | 2004-06-21 | 2006-01-26 | Exxonmobil Chemical Patents Inc. | Polymerization process |
| US7754510B2 (en) * | 2007-04-02 | 2010-07-13 | Xerox Corporation | Phase-separated dielectric structure fabrication process |
| CN101525511B (zh) * | 2008-03-07 | 2011-06-22 | 财团法人工业技术研究院 | 可硬化交联型的墨水组合物及介电薄膜 |
| US8154080B2 (en) * | 2008-12-05 | 2012-04-10 | Xerox Corporation | Dielectric structure having lower-k and higher-k materials |
| JP2010245379A (ja) * | 2009-04-08 | 2010-10-28 | Hitachi Chem Co Ltd | 絶縁体インク、絶縁被覆層の作製方法及び半導体装置 |
-
2010
- 2010-12-01 US US12/957,461 patent/US8821962B2/en active Active
-
2011
- 2011-11-18 JP JP2011253263A patent/JP2012119678A/ja active Pending
- 2011-12-01 CN CN201110392847.5A patent/CN102487125B/zh active Active
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