TWI369582B - Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition - Google Patents

Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition

Info

Publication number
TWI369582B
TWI369582B TW096135922A TW96135922A TWI369582B TW I369582 B TWI369582 B TW I369582B TW 096135922 A TW096135922 A TW 096135922A TW 96135922 A TW96135922 A TW 96135922A TW I369582 B TWI369582 B TW I369582B
Authority
TW
Taiwan
Prior art keywords
hardmask composition
organosilane polymer
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
TW096135922A
Other languages
Chinese (zh)
Other versions
TW200827928A (en
Inventor
Sang Kyun Kim
Jong Seob Kim
Dong Seon Uh
Chang Il Oh
Sang Hak Lim
Hui Chan Yun
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200827928A publication Critical patent/TW200827928A/en
Application granted granted Critical
Publication of TWI369582B publication Critical patent/TWI369582B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
TW096135922A 2006-09-28 2007-09-27 Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition TWI369582B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060094967A KR100760522B1 (en) 2006-09-28 2006-09-28 Hardmask composition coated under photoresist and process of producing integrated circuit devices using thereof

Publications (2)

Publication Number Publication Date
TW200827928A TW200827928A (en) 2008-07-01
TWI369582B true TWI369582B (en) 2012-08-01

Family

ID=39230284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135922A TWI369582B (en) 2006-09-28 2007-09-27 Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition

Country Status (3)

Country Link
KR (1) KR100760522B1 (en)
TW (1) TWI369582B (en)
WO (1) WO2008038863A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11392037B2 (en) 2008-02-18 2022-07-19 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having cyclic amino group
US8864894B2 (en) 2008-08-18 2014-10-21 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing silicone having onium group
WO2010071155A1 (en) * 2008-12-19 2010-06-24 日産化学工業株式会社 Silicon-containing resist underlayer film formation composition having anion group
JP5618095B2 (en) 2009-06-02 2014-11-05 日産化学工業株式会社 Silicon-containing resist underlayer film forming composition having sulfide bond
JP5544242B2 (en) 2009-07-31 2014-07-09 チェイル インダストリーズ インコーポレイテッド Aromatic ring-containing polymer for resist underlayer film, resist underlayer film composition containing the same, and element pattern forming method using the composition
KR101333703B1 (en) 2009-07-31 2013-11-27 제일모직주식회사 Aromatic ring-included polymer for under-layer of resist, under-layer composition of resist including same, and method of patterning device using same
EP2479615B1 (en) 2009-09-16 2014-04-23 Nissan Chemical Industries, Ltd. Silicon-containing composition having sulfonamide group for forming resist underlayer film
KR101947105B1 (en) 2010-02-19 2019-02-13 닛산 가가쿠 가부시키가이샤 Composition for formation of resist underlayer film containing silicon having nitrogen-containing ring

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232354A (en) * 1988-07-22 1990-02-02 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition
JPH0235455A (en) * 1988-07-26 1990-02-06 Fujitsu Ltd Resist material and pattern forming method
JPH04366958A (en) * 1991-06-14 1992-12-18 Oki Electric Ind Co Ltd Radiation sensitive resin composition
JP3324360B2 (en) 1995-09-25 2002-09-17 信越化学工業株式会社 Polysiloxane compound and positive resist material
JP4676256B2 (en) 2002-12-02 2011-04-27 東京応化工業株式会社 New ladder-type silicone copolymer

Also Published As

Publication number Publication date
TW200827928A (en) 2008-07-01
KR100760522B1 (en) 2007-10-04
WO2008038863A1 (en) 2008-04-03

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