HK1258606A1 - 曝光設備以及裝置製造方法 - Google Patents

曝光設備以及裝置製造方法

Info

Publication number
HK1258606A1
HK1258606A1 HK19100965.0A HK19100965A HK1258606A1 HK 1258606 A1 HK1258606 A1 HK 1258606A1 HK 19100965 A HK19100965 A HK 19100965A HK 1258606 A1 HK1258606 A1 HK 1258606A1
Authority
HK
Hong Kong
Prior art keywords
exposure apparatus
device manufacturing
manufacturing
exposure
Prior art date
Application number
HK19100965.0A
Other languages
English (en)
Inventor
Soichi Owa
Nobutaka Magome
Shigeru Hirukawa
Yoshihiko Kudo
Jiro Inoue
Hirotaka Kohno
Masahiro Nei
Motokatsu Imai
Hiroyuki Nagasaka
Kenichi Shiraishi
Yasufumi Nishii
Hiroaki Takaiwa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1258606A1 publication Critical patent/HK1258606A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
HK19100965.0A 2003-06-13 2019-01-18 曝光設備以及裝置製造方法 HK1258606A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003169904 2003-06-13
JP2003383887 2003-11-13
JP2004039654 2004-02-17

Publications (1)

Publication Number Publication Date
HK1258606A1 true HK1258606A1 (zh) 2019-11-15

Family

ID=33556144

Family Applications (3)

Application Number Title Priority Date Filing Date
HK14110233.0A HK1196900A1 (zh) 2003-06-13 2014-10-14 曝光方法、基材平台、曝光裝置以及設備製造方法
HK16102657.2A HK1214680A1 (zh) 2003-06-13 2016-03-08 曝光方法、基片台、曝光設備以及器件製造方法
HK19100965.0A HK1258606A1 (zh) 2003-06-13 2019-01-18 曝光設備以及裝置製造方法

Family Applications Before (2)

Application Number Title Priority Date Filing Date
HK14110233.0A HK1196900A1 (zh) 2003-06-13 2014-10-14 曝光方法、基材平台、曝光裝置以及設備製造方法
HK16102657.2A HK1214680A1 (zh) 2003-06-13 2016-03-08 曝光方法、基片台、曝光設備以及器件製造方法

Country Status (7)

Country Link
US (9) US7483119B2 (zh)
EP (5) EP2738792B1 (zh)
JP (11) JP4415939B2 (zh)
KR (9) KR20180112884A (zh)
HK (3) HK1196900A1 (zh)
TW (7) TW200511388A (zh)
WO (1) WO2004112108A1 (zh)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101713932B (zh) * 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
EP3352010A1 (en) * 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200511388A (en) * 2003-06-13 2005-03-16 Nikon Corp Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
ATE513309T1 (de) 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
KR101288632B1 (ko) 2003-08-21 2013-07-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101242886B1 (ko) * 2003-08-29 2013-03-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101121260B1 (ko) * 2003-10-28 2012-03-23 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스의 제조 방법
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
SG2014014955A (en) 2003-12-03 2014-07-30 Nippon Kogaku Kk Exposure apparatus, exposure method, method for producing device, and optical part
KR101499405B1 (ko) * 2003-12-15 2015-03-05 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005067013A1 (ja) * 2004-01-05 2005-07-21 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
JP4572539B2 (ja) * 2004-01-19 2010-11-04 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4622340B2 (ja) * 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
JP4973754B2 (ja) * 2004-03-04 2012-07-11 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP2005302880A (ja) * 2004-04-08 2005-10-27 Canon Inc 液浸式露光装置
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101511876B1 (ko) 2004-06-09 2015-04-13 가부시키가이샤 니콘 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
JP5119666B2 (ja) 2004-06-21 2013-01-16 株式会社ニコン 露光装置、液体除去方法、及びデバイス製造方法
US7914972B2 (en) 2004-07-21 2011-03-29 Nikon Corporation Exposure method and device manufacturing method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4618253B2 (ja) 2004-09-17 2011-01-26 株式会社ニコン 基板保持装置、露光装置、及びデバイス製造方法
WO2006030910A1 (ja) * 2004-09-17 2006-03-23 Nikon Corporation 露光用基板、露光方法及びデバイス製造方法
CN100483625C (zh) * 2004-12-02 2009-04-29 株式会社尼康 曝光装置、曝光方法以及器件制造方法
TWI424465B (zh) 2004-12-15 2014-01-21 尼康股份有限公司 A substrate holding device, an exposure device, and a device manufacturing method
JP4488890B2 (ja) 2004-12-27 2010-06-23 株式会社東芝 レジストパターン形成方法及び半導体装置の製造方法
JP4551758B2 (ja) 2004-12-27 2010-09-29 株式会社東芝 液浸露光方法および半導体装置の製造方法
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
JPWO2006077859A1 (ja) * 2005-01-18 2008-06-19 株式会社ニコン 液体除去装置、露光装置、及びデバイス製造方法
JP2006202825A (ja) * 2005-01-18 2006-08-03 Jsr Corp 液浸型露光装置
JP5040646B2 (ja) * 2005-03-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
EP1876635A4 (en) 2005-04-25 2010-06-30 Nikon Corp EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
JP4752320B2 (ja) * 2005-04-28 2011-08-17 株式会社ニコン 基板保持装置及び露光装置、基板保持方法、露光方法、並びにデバイス製造方法
US7433016B2 (en) * 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP4761055B2 (ja) * 2005-06-10 2011-08-31 信越化学工業株式会社 パターン形成方法
US7417707B2 (en) * 2005-06-29 2008-08-26 Corbett Blaise L Introduction of an intermediary refractive layer for immersion lithography
JP3997245B2 (ja) * 2005-10-04 2007-10-24 キヤノン株式会社 露光装置及びデバイス製造方法
US7878791B2 (en) 2005-11-04 2011-02-01 Asml Netherlands B.V. Imprint lithography
US8011915B2 (en) 2005-11-04 2011-09-06 Asml Netherlands B.V. Imprint lithography
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
EP2768016B1 (en) * 2005-12-08 2017-10-25 Nikon Corporation Exposure apparatus and method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446859B2 (en) * 2006-01-27 2008-11-04 International Business Machines Corporation Apparatus and method for reducing contamination in immersion lithography
US7310132B2 (en) * 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
CN100590173C (zh) * 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US8027019B2 (en) 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2535744A3 (en) 2006-04-03 2013-10-09 Nikon Corporation Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system
US7978308B2 (en) * 2006-05-15 2011-07-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007135990A1 (ja) * 2006-05-18 2007-11-29 Nikon Corporation 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
US20070273856A1 (en) 2006-05-25 2007-11-29 Nikon Corporation Apparatus and methods for inhibiting immersion liquid from flowing below a substrate
JP2007335476A (ja) * 2006-06-12 2007-12-27 Canon Inc 露光装置及びデバイス製造方法
US20080043211A1 (en) * 2006-08-21 2008-02-21 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008108766A (ja) * 2006-10-23 2008-05-08 Toppan Printing Co Ltd チャックおよびスピンコータ装置
US20080100812A1 (en) * 2006-10-26 2008-05-01 Nikon Corporation Immersion lithography system and method having a wafer chuck made of a porous material
US8253922B2 (en) * 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8208116B2 (en) 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8416383B2 (en) * 2006-12-13 2013-04-09 Asml Netherlands B.V. Lithographic apparatus and method
US20080241489A1 (en) * 2007-03-30 2008-10-02 Renesas Technology Corp. Method of forming resist pattern and semiconductor device manufactured with the same
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7561250B2 (en) * 2007-06-19 2009-07-14 Asml Netherlands B.V. Lithographic apparatus having parts with a coated film adhered thereto
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI514090B (zh) * 2007-07-13 2015-12-21 Mapper Lithography Ip Bv 微影系統及用於支撐晶圓的晶圓台
JP4961299B2 (ja) * 2007-08-08 2012-06-27 キヤノン株式会社 露光装置およびデバイス製造方法
JP4533416B2 (ja) * 2007-09-25 2010-09-01 キヤノン株式会社 露光装置およびデバイス製造方法
JP5369443B2 (ja) * 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
US20090218743A1 (en) * 2008-02-29 2009-09-03 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, device fabricating method, plate member, and wall
JP2009260264A (ja) * 2008-03-24 2009-11-05 Canon Inc 露光装置およびデバイス製造方法
JP5097166B2 (ja) * 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
NL1036924A1 (nl) * 2008-06-02 2009-12-03 Asml Netherlands Bv Substrate table, lithographic apparatus and device manufacturing method.
NL2002983A1 (nl) * 2008-06-26 2009-12-29 Asml Netherlands Bv A lithographic apparatus and a method of operating the lithographic apparatus.
JP2010021370A (ja) * 2008-07-10 2010-01-28 Canon Inc 液浸露光装置およびデバイス製造方法
EP2196857A3 (en) 2008-12-09 2010-07-21 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
JP5001343B2 (ja) 2008-12-11 2012-08-15 エーエスエムエル ネザーランズ ビー．ブイ． 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法
JP4853530B2 (ja) * 2009-02-27 2012-01-11 株式会社豊田中央研究所 可動部を有するマイクロデバイス
JP5398307B2 (ja) * 2009-03-06 2014-01-29 株式会社東芝 半導体装置の製造方法
NL2004305A (en) 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
NL2004807A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Substrate table for a lithographic apparatus, litographic apparatus, method of using a substrate table and device manufacturing method.
US8913230B2 (en) * 2009-07-02 2014-12-16 Canon Nanotechnologies, Inc. Chucking system with recessed support feature
NL2005126A (en) * 2009-09-21 2011-03-22 Asml Netherlands Bv Lithographic apparatus, coverplate and device manufacturing method.
NL2005120A (en) * 2009-09-21 2011-03-22 Asml Netherlands Bv Lithographic apparatus, coverplate and device manufacturing method.
NL2005666A (en) * 2009-12-18 2011-06-21 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
NL2005874A (en) * 2010-01-22 2011-07-25 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
TW201630105A (zh) * 2015-02-12 2016-08-16 漢民科技股份有限公司 晶圓保持器
US8298729B2 (en) * 2010-03-18 2012-10-30 Micron Technology, Inc. Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks
JP5131312B2 (ja) * 2010-04-26 2013-01-30 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US8598538B2 (en) * 2010-09-07 2013-12-03 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
NL2007802A (en) 2010-12-21 2012-06-25 Asml Netherlands Bv A substrate table, a lithographic apparatus and a device manufacturing method.
US9329496B2 (en) * 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
US9139442B2 (en) 2011-10-18 2015-09-22 Toagosei Co. Ltd. Method for producing chloropolysilane and fluidized-bed reactor
CN104081285B (zh) 2012-02-03 2017-06-13 Asml荷兰有限公司 衬底保持器和制造衬底保持器的方法
NL2010817A (en) * 2012-05-29 2013-12-02 Asml Netherlands Bv A support apparatus, a lithographic apparatus and a device manufacturing method.
JP2014045090A (ja) * 2012-08-27 2014-03-13 Toshiba Corp 液浸露光装置
JP6155581B2 (ja) * 2012-09-14 2017-07-05 株式会社ニコン 露光装置、露光方法、デバイス製造方法
US9939736B2 (en) * 2014-01-20 2018-04-10 Asml Netherlands B.V. Substrate holder and support table for lithography
KR102005649B1 (ko) * 2014-12-12 2019-10-01 캐논 가부시끼가이샤 기판 유지 장치, 리소그래피 장치, 및 물품의 제조 방법
CN107430357B (zh) * 2015-03-31 2021-02-05 株式会社尼康 曝光装置、平面显示器的制造方法、元件制造方法、及曝光方法
CN107743597B (zh) 2015-06-11 2020-10-27 Asml荷兰有限公司 光刻设备及用于加载衬底的方法
NL2017014A (en) * 2015-06-23 2016-12-29 Asml Netherlands Bv A Support Apparatus, a Lithographic Apparatus and a Device Manufacturing Method
US10254256B2 (en) 2015-10-01 2019-04-09 Thermo Hypersil-Keystone Llc Method of packing chromatographic columns, packed chromatographic columns for use at high pressures and uses thereof
JP6751759B2 (ja) 2015-12-08 2020-09-09 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブル、リソグラフィ装置、及びリソグラフィ装置を操作する方法
JP6648266B2 (ja) * 2015-12-15 2020-02-14 エーエスエムエル ネザーランズ ビー．ブイ． 基板ホルダ、リソグラフィ装置、及びデバイスを製造する方法
JP6756850B2 (ja) * 2016-05-12 2020-09-16 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置用の抽出体
US10185226B2 (en) * 2016-07-14 2019-01-22 Canon Kabushiki Kaisha Stage apparatus, lithography apparatus, and method of manufacturing article
KR20180064605A (ko) * 2016-12-05 2018-06-15 삼성디스플레이 주식회사 레이저 가공용 워크 테이블 및 이의 동작 방법
JP6978840B2 (ja) * 2017-02-28 2021-12-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板保持装置
CN118330997A (zh) * 2017-06-06 2024-07-12 Asml荷兰有限公司 真空系统、支撑台、定位装置、光刻设备及计算机程序产品
JP6418281B2 (ja) * 2017-06-07 2018-11-07 株式会社ニコン 露光装置
WO2018233825A1 (en) * 2017-06-21 2018-12-27 Hp Indigo B.V. VACUUM TABLES
KR20240145049A (ko) 2017-10-12 2024-10-04 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 사용하기 위한 기판 홀더
EP3707747A4 (en) * 2017-11-10 2021-07-28 Applied Materials, Inc. DOUBLE-SIDED PATTERN CHUCK
JP7164605B2 (ja) 2017-12-13 2022-11-01 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置で使用するための基板ホルダ
JP2019193995A (ja) * 2018-05-02 2019-11-07 カンタツ株式会社 積層造形装置および積層造形装置の制御方法
WO2019226525A1 (en) * 2018-05-23 2019-11-28 Ii-Vi Delaware, Inc. Apparatus for supporting thinned semiconductor wafers
JP2019032552A (ja) * 2018-10-10 2019-02-28 株式会社ニコン 露光装置、露光方法、デバイス製造方法
US11482417B2 (en) * 2019-08-23 2022-10-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure
US11638882B2 (en) * 2020-04-26 2023-05-02 Shantou Chenghai Lichengfeng Plastic Products Factory Wall-climbing vehicle and bottom cover of such vehicle
KR102381348B1 (ko) * 2020-10-29 2022-03-30 한국전기연구원 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법
JP7532234B2 (ja) * 2020-12-10 2024-08-13 キヤノン株式会社 平坦化装置、平坦化方法及び物品の製造方法
KR20220090909A (ko) 2020-12-23 2022-06-30 정주은 수분 감지센서를 이용한 화분 관리
CN113411937B (zh) * 2021-05-07 2022-12-27 深圳市声光行科技发展有限公司 一种舞台灯光控制平台
WO2023241893A1 (en) * 2022-06-15 2023-12-21 Asml Netherlands B.V. Substrate support and lithographic apparatus

Family Cites Families (258)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (zh)
US221563A (en) * 1879-11-11 Arthur l
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62221130A (ja) * 1986-03-24 1987-09-29 Toshiba Corp 真空チヤツク装置
JPS6394627A (ja) * 1986-10-09 1988-04-25 Nec Corp 半導体の製造装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH0793254B2 (ja) * 1987-07-22 1995-10-09 松下電子工業株式会社 レジスト膜形成用基板の処理方法
JPH0831515B2 (ja) * 1988-06-21 1996-03-27 株式会社ニコン 基板の吸着装置
JP2978192B2 (ja) * 1990-02-19 1999-11-15 株式会社ピュアレックス 半導体ウエハー試料作成法
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH05235151A (ja) * 1992-02-20 1993-09-10 Canon Inc 基板保持盤
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH06326174A (ja) * 1993-05-12 1994-11-25 Hitachi Ltd ウェハ真空吸着装置
JPH0781978A (ja) 1993-06-18 1995-03-28 Olympus Optical Co Ltd ガラス製光学部品における撥水性を有する反射防止膜
JP2890089B2 (ja) * 1993-09-06 1999-05-10 東京エレクトロン株式会社 処理装置
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JP3387075B2 (ja) 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08250402A (ja) * 1995-03-15 1996-09-27 Nikon Corp 走査型露光方法及び装置
JP3312164B2 (ja) * 1995-04-07 2002-08-05 日本電信電話株式会社 真空吸着装置
JPH0936212A (ja) * 1995-05-16 1997-02-07 Shinko Electric Co Ltd 静電チャック
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
JPH1049504A (ja) * 1996-08-02 1998-02-20 Mitsubishi Electric Corp 負荷分散バッチシステム
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
SG93267A1 (en) 1996-11-28 2002-12-17 Nikon Corp An exposure apparatus and an exposure method
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6381013B1 (en) * 1997-06-25 2002-04-30 Northern Edge Associates Test slide for microscopes and method for the production of such a slide
JPH1116816A (ja) * 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4001661B2 (ja) * 1997-07-08 2007-10-31 沖電気工業株式会社 ウェハ載置台、ウェハ裏面の処理方法、露光装置、および回転塗布装置
JPH11111819A (ja) 1997-09-30 1999-04-23 Asahi Kasei Micro Syst Co Ltd ウェハーの固定方法及び露光装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11163103A (ja) * 1997-11-25 1999-06-18 Hitachi Ltd 半導体装置の製造方法および製造装置
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2186099A (en) * 1998-02-09 1999-08-23 Nikon Corporation Apparatus for supporting base plate, apparatus and method for transferring base plate, method of replacing base plate, and exposure apparatus and method of manufacturing the same
JPH11239758A (ja) * 1998-02-26 1999-09-07 Dainippon Screen Mfg Co Ltd 基板処理装置
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
EP1079223A4 (en) 1998-05-19 2002-11-27 Nikon Corp INSTRUMENT AND METHOD FOR MEASURING ABERRATIONS, APPARATUS AND METHOD FOR PROJECTION SENSITIZATION INCORPORATING THIS INSTRUMENT, AND METHOD FOR MANUFACTURING DEVICES THEREOF
US6819414B1 (en) 1998-05-19 2004-11-16 Nikon Corporation Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method
US6036586A (en) * 1998-07-29 2000-03-14 Micron Technology, Inc. Apparatus and method for reducing removal forces for CMP pads
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2000072375A1 (fr) * 1999-05-20 2000-11-30 Nikon Corporation Contenant pour appareil d'exposition de support, procede de fabrication de dispositif et appareil de fabrication de dispositif
AU5653699A (en) 1999-09-20 2001-04-24 Nikon Corporation Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
EP1291910B1 (en) * 2000-01-28 2007-01-10 Hitachi Tokyo Electronics Co., Ltd. Wafer chuck, exposure system, and method of manufacturing semiconductor device
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US6614504B2 (en) 2000-03-30 2003-09-02 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002229215A (ja) * 2001-01-30 2002-08-14 Nikon Corp 露光方法及び露光装置
EP1231514A1 (en) 2001-02-13 2002-08-14 Asm Lithography B.V. Measurement of wavefront aberrations in a lithographic projection apparatus
JP2002248344A (ja) * 2001-02-26 2002-09-03 Nikon Corp 極端紫外光発生装置並びにそれを用いた露光装置及び半導体製造方法
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
US7196212B2 (en) * 2001-10-05 2007-03-27 Shin-Etsu Chemical Co., Ltd. Perfluoropolyether-modified silane, surface treating agent, and antireflection filter
JP4412450B2 (ja) 2001-10-05 2010-02-10 信越化学工業株式会社 反射防止フィルター
JP2003124089A (ja) * 2001-10-09 2003-04-25 Nikon Corp 荷電粒子線露光装置及び露光方法
TW521320B (en) 2001-12-10 2003-02-21 Via Tech Inc Device and method for substrate exposure
JP2003240906A (ja) 2002-02-20 2003-08-27 Dainippon Printing Co Ltd 反射防止体およびその製造方法
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US6882406B2 (en) * 2002-06-14 2005-04-19 Asml Netherlands B.V. Euv lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured thereby
AU2003256081A1 (en) 2002-08-23 2004-03-11 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
CN101424881B (zh) 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
CN1723539B (zh) 2002-12-10 2010-05-26 株式会社尼康 曝光装置和曝光方法以及器件制造方法
CN100446179C (zh) 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
KR20120127755A (ko) * 2002-12-10 2012-11-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
JP4595320B2 (ja) 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
JP4184346B2 (ja) 2002-12-13 2008-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上のスポットを照射するための方法及び装置における液体除去
US7514699B2 (en) 2002-12-19 2009-04-07 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
EP1732075A3 (en) 2002-12-19 2007-02-21 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP2005250511A (ja) * 2003-02-20 2005-09-15 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料による保護膜を有するレジスト膜、および該保護膜を用いたレジストパターン形成方法
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
EP3352010A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
EP2950148B1 (en) 2003-04-10 2016-09-21 Nikon Corporation Environmental system including vaccum scavenge for an immersion lithography apparatus
CN106444292A (zh) 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
KR101861493B1 (ko) 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
TW200424730A (en) 2003-05-03 2004-11-16 Jiahn-Chang Wu Projector with UV light source.
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6995833B2 (en) 2003-05-23 2006-02-07 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
TWI612556B (zh) * 2003-05-23 2018-01-21 Nikon Corp 曝光裝置、曝光方法及元件製造方法
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
TW200511388A (en) 2003-06-13 2005-03-16 Nikon Corp Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
EP1491956B1 (en) * 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007527615A (ja) 2003-07-01 2007-09-27 株式会社ニコン 同位体特定流体の光学素子としての使用方法
EP2853943B1 (en) 2003-07-08 2016-11-16 Nikon Corporation Wafer table for immersion lithography
SG109000A1 (en) * 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) * 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP3223053A1 (en) 2003-09-03 2017-09-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1519230A1 (en) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) * 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP3093711A3 (en) 2003-09-29 2017-05-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP2007525824A (ja) 2003-11-05 2007-09-06 ディーエスエム アイピー アセッツ ビー．ブイ． マイクロチップを製造するための方法および装置
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
DE10355301B3 (de) * 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) * 2003-12-09 2005-06-30 Canon Inc 露光装置
WO2005106589A1 (en) 2004-05-04 2005-11-10 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and immersion liquid therefore
KR101499405B1 (ko) * 2003-12-15 2015-03-05 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
US7385764B2 (en) 2003-12-15 2008-06-10 Carl Zeiss Smt Ag Objectives as a microlithography projection objective with at least one liquid lens
JP4308638B2 (ja) * 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP2005183744A (ja) * 2003-12-22 2005-07-07 Nikon Corp 露光装置及びデバイス製造方法
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101204114B1 (ko) 2004-01-14 2012-11-23 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
CN1910522B (zh) 2004-01-16 2010-05-26 卡尔蔡司Smt股份公司 偏振调制光学元件
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
KR101204157B1 (ko) 2004-01-20 2012-11-22 칼 짜이스 에스엠테 게엠베하 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
EP1723467A2 (en) 2004-02-03 2006-11-22 Rochester Institute of Technology Method of photolithography using a fluid and a system thereof
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101199076B1 (ko) 2004-06-04 2012-11-07 칼 짜이스 에스엠티 게엠베하 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
CN100594430C (zh) * 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
KR101511876B1 (ko) * 2004-06-09 2015-04-13 가부시키가이샤 니콘 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
JP5119666B2 (ja) 2004-06-21 2013-01-16 株式会社ニコン 露光装置、液体除去方法、及びデバイス製造方法
JP4618253B2 (ja) * 2004-09-17 2011-01-26 株式会社ニコン 基板保持装置、露光装置、及びデバイス製造方法
WO2006046562A1 (ja) * 2004-10-26 2006-05-04 Nikon Corporation 基板処理方法、露光装置及びデバイス製造方法
US7230681B2 (en) * 2004-11-18 2007-06-12 International Business Machines Corporation Method and apparatus for immersion lithography
JP2006270057A (ja) 2005-02-28 2006-10-05 Canon Inc 露光装置
EP1876635A4 (en) * 2005-04-25 2010-06-30 Nikon Corp EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
US20070177119A1 (en) * 2006-02-02 2007-08-02 Keiko Chiba Exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
US20150301457A1 (en) 2015-10-22
US20090015808A1 (en) 2009-01-15
US20170329234A1 (en) 2017-11-16
TW200511388A (en) 2005-03-16
EP1641028A1 (en) 2006-03-29
TW201214518A (en) 2012-04-01
JP2014140059A (ja) 2014-07-31
JP5817869B2 (ja) 2015-11-18
HK1196900A1 (zh) 2014-12-24
EP1641028A4 (en) 2008-10-15
KR20120125564A (ko) 2012-11-15
KR101290021B1 (ko) 2013-07-30
JP5692189B2 (ja) 2015-04-01
JP5692188B2 (ja) 2015-04-01
US20130141703A1 (en) 2013-06-06
TWI409853B (zh) 2013-09-21
US9846371B2 (en) 2017-12-19
US20060227312A1 (en) 2006-10-12
JP2012129566A (ja) 2012-07-05
JP2017187786A (ja) 2017-10-12
TW201818451A (zh) 2018-05-16
EP2937893A1 (en) 2015-10-28
TW201445617A (zh) 2014-12-01
JP6477785B2 (ja) 2019-03-06
US9019467B2 (en) 2015-04-28
JP6256498B2 (ja) 2018-01-10
EP1641028B1 (en) 2015-08-05
JP2013016839A (ja) 2013-01-24
KR20180112884A (ko) 2018-10-12
JP2015163970A (ja) 2015-09-10
US7483119B2 (en) 2009-01-27
US9268237B2 (en) 2016-02-23
EP3401946A1 (en) 2018-11-14
KR101528016B1 (ko) 2015-06-12
JP5699979B2 (ja) 2015-04-15
TWI619148B (zh) 2018-03-21
EP3104396A1 (en) 2016-12-14
HK1214680A1 (zh) 2016-07-29
KR101242815B1 (ko) 2013-03-12
EP2738792A3 (en) 2014-08-06
TWI560749B (zh) 2016-12-01
JP4415939B2 (ja) 2010-02-17
JP6172196B2 (ja) 2017-08-02
JP2019003218A (ja) 2019-01-10
EP2937893B1 (en) 2016-09-28
KR20110117209A (ko) 2011-10-26
KR101528089B1 (ko) 2015-06-11
US20060139614A1 (en) 2006-06-29
KR101940892B1 (ko) 2019-01-21
JP2010161381A (ja) 2010-07-22
JP2010010703A (ja) 2010-01-14
US8384880B2 (en) 2013-02-26
US20130141701A1 (en) 2013-06-06
KR20140052043A (ko) 2014-05-02
JP2012248892A (ja) 2012-12-13
JPWO2004112108A1 (ja) 2006-07-27
KR101421866B1 (ko) 2014-07-22
EP2738792B1 (en) 2015-08-05
TW200952044A (en) 2009-12-16
KR20130102645A (ko) 2013-09-17
TWI467634B (zh) 2015-01-01
WO2004112108A1 (ja) 2004-12-23
EP3104396B1 (en) 2018-03-21
KR20160113745A (ko) 2016-09-30
TWI352375B (zh) 2011-11-11
KR101729866B1 (ko) 2017-04-24
EP2738792A2 (en) 2014-06-04
KR101520591B1 (ko) 2015-05-14
KR20120115599A (ko) 2012-10-18
JP5152143B2 (ja) 2013-02-27
TW201619719A (zh) 2016-06-01
JP2016106274A (ja) 2016-06-16
US20090015816A1 (en) 2009-01-15
JP5152215B2 (ja) 2013-02-27
US8040491B2 (en) 2011-10-18
TW201701324A (zh) 2017-01-01
TWI607292B (zh) 2017-12-01
KR20060016812A (ko) 2006-02-22
US8208117B2 (en) 2012-06-26
US20080117394A1 (en) 2008-05-22
KR20150023924A (ko) 2015-03-05

Similar Documents

Publication Publication Date Title
HK1258606A1 (zh) 曝光設備以及裝置製造方法
HK1248027A1 (zh) 曝光裝置和器件製造方法
HK1204091A1 (zh) 曝光裝置和設備製造方法
HK1215755A1 (zh) 曝光裝置及元件製造方法
SG2011031200A (en) Exposure apparatus and device manufacturing method
TWI347741B (en) Lithographic apparatus and device manufacturing method
HK1200922A1 (zh) 曝光裝置、器件製造方法
SG118281A1 (en) Lithographic apparatus and device manufacturing method
SG109610A1 (en) Lithographic apparatus and device manufacturing method
SG118282A1 (en) Lithographic apparatus and device manufacturing method
SG109000A1 (en) Lithographic apparatus and device manufacturing method
SG109609A1 (en) Lithographic apparatus and device manufacturing method
SG109608A1 (en) Lithographic apparatus and device manufacturing method
SG108997A1 (en) Lithographic apparatus and device manufacturing method
HK1140550A1 (zh) 曝光方法和裝置、以及設備製造方法
HK1093119A1 (en) Exposure apparatus, exposure method, and device manufacturing method
SG10201607457PA (en) Exposure apparatus, exposure method and device manufacturing method
EP1628329A4 (en) EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
IL215923A (en) Exposure device and method
SG112968A1 (en) Lithographic apparatus and device manufacturing method
SG118190A1 (en) Exposure apparatus and stage device and device manufacturing method
HK1089292A1 (zh) 曝光裝置和曝光方法
SG111309A1 (en) Lithographic apparatus and device manufacturing method
SG108317A1 (en) Lithographic apparatus and device manufacturing method
SG112064A1 (en) Lithographic apparatus and device manufacturing method