JP5152143B2 - 基板ステージ、露光装置、及びデバイス製造方法 - Google Patents
基板ステージ、露光装置、及びデバイス製造方法 Download PDFInfo
- Publication number
- JP5152143B2 JP5152143B2 JP2009231860A JP2009231860A JP5152143B2 JP 5152143 B2 JP5152143 B2 JP 5152143B2 JP 2009231860 A JP2009231860 A JP 2009231860A JP 2009231860 A JP2009231860 A JP 2009231860A JP 5152143 B2 JP5152143 B2 JP 5152143B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- space
- substrate stage
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Description
本発明は、投影光学系と液体とを介してパターンの像を基板に露光する露光方法、基板を支持する基板ステージ、露光装置、及びデバイス製造方法に関するものである。
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
光学素子2は螢石で形成されている。螢石は水との親和性が高いので、光学素子2の液体接触面2aのほぼ全面に液体1を密着させることができる。すなわち、本実施形態においては光学素子2の液体接触面2aとの親和性が高い液体(水)1を供給するようにしているので、光学素子2の液体接触面2aと液体1との密着性が高く、光学素子2と基板Pとの間の光路を液体1で確実に満たすことができる。なお、光学素子2は水との親和性が高い石英であってもよい。また光学素子2の液体接触面2aに親水化(親液化)処理を施して、液体1との親和性をより高めるようにしてもよい。また、鏡筒PKは、その先端付近が液体(水)1に接することになるので、少なくとも先端付近はTi(チタン)等の錆びに対して耐性のある金属で形成される。
こうすることによっても、支持部34に支持された基板Pのノッチ部NTとプレート部30の平坦面31とのギャップを小さくすることができる。更に、プレート部30の平坦面31と内側面36と同様に、突起部材152の上面や側面を撥液処理するなどして撥液性にすることで、液体1の浸入をより効果的に防止することができる。
露光装置EXとしては、マスクMと基板Pとを同期移動してマスクMのパターンを走査露光するステップ・アンド・スキャン方式の走査型露光装置(スキャニングステッパ)の他に、マスクMと基板Pとを静止した状態でマスクMのパターンを一括露光し、基板Pを順次ステップ移動させるステップ・アンド・リピート方式の投影露光装置(ステッパ)にも適用することができる。また、本発明は基板P上で少なくとも2つのパターンを部分的に重ねて転写するステップ・アンド・スティッチ方式の露光装置にも適用できる。
Claims (23)
- 被露光対象としての基板を保持して移動可能な基板ステージにおいて、
前記基板を支持する支持部と、
前記支持部に支持された前記基板の周囲に配置され、前記基板の表面とほぼ面一の平坦部と、
前記支持部に支持された前記基板の切欠部と前記平坦部とのギャップを小さくするためのギャップ調整部とを備えたことを特徴とする基板ステージ。 - 前記ギャップ調整部は、前記平坦部と一体的に形成されていることを特徴とする請求項1に記載の基板ステージ。
- 前記ギャップ調整部は可動であることを特徴とする請求項1に記載の基板ステージ。
- 前記支持部の周囲に配置された周壁を備え、
前記周壁で囲まれた空間を負圧にすることによって、前記基板が前記支持部に保持されることを特徴とする請求項1〜3のいずれか一項に記載の基板ステージ。 - 前記支持部の周囲に配置された周壁を備え、
前記周壁は、前記基板の前記切欠部の形状に合わせて形成されており、
前記周壁に囲まれた空間を負圧にすることによって、前記支持部に前記基板を保持することを特徴とする請求項1〜3のいずれか一項に記載の基板ステージ。 - 前記周壁の上部は撥液性であることを特徴とする請求項5に記載の基板ステージ。
- 被露光対象としての基板を保持して移動可能な基板ステージにおいて、
前記基板を支持するための支持部と、
前記支持部に前記基板を吸着するための複数の吸気口とを備え、
前記基板の切欠部近傍の吸気力を、その周りの吸気力よりも小さくしたことを特徴とする基板ステージ。 - 前記複数の吸気口のうち、前記基板の前記切欠部近傍の吸気口は、他の吸気口とは独立した真空系に接続されていることを特徴とする請求項7記載の基板ステージ。
- 前記複数の吸気口のうち、前記基板の切欠部近傍の吸気口の口径を、他の吸気口の口径よりも小さくしたことを特徴とする請求項7又は8に記載の基板ステージ。
- 請求項1〜請求項9のいずれか一項記載の基板ステージに保持された基板上に投影光学系と液体とを介して露光光を照射して、その基板を液浸露光することを特徴とする露光装置。
- 請求項10記載の露光装置を用いることを特徴とするデバイス製造方法。
- 投影光学系と、該投影光学系の像面側に供給される液体により形成される液浸領域とを介して基板を露光する露光装置に設けられ、前記基板を保持して移動可能な基板ステージであって、
前記基板の裏面を保持する基板ホルダと、
前記基板ホルダの周囲に配置され、前記液浸領域に接触可能な平坦部を有する周辺部材と、を備え、
前記周辺部材は、前記基板ホルダに保持された前記基板の切欠部の形状に対応する形状を有し該切欠部に対向して配置される対向部を含み、
前記対向部は、該対向部と前記切欠部との間のギャップが所定値以下になるように設けられることを特徴とする基板ステージ。 - 前記切欠部は、ノッチ部を含み、
前記対向部は、前記ノッチ部の形状に対応する形状を有した突起部を含むことを特徴とする請求項12に記載の基板ステージ。 - 前記切欠部は、オリエンテーションフラット部を含み、
前記対向部は、前記オリエンテーションフラット部に対応する形状を有したフラット部を含むことを特徴とする請求項12に記載の基板ステージ。 - 前記対向部は、前記基板ホルダに保持された前記基板の前記切欠部に対して接近する方向及び離間する方向に移動可能であることを特徴とする請求項12〜14のいずれか一項に記載の基板ステージ。
- 前記周辺部材は、前記基板ホルダに保持された前記基板と当該周辺部材との間のギャップが前記所定値以下になるように設けられることを特徴とする請求項12〜15のいずれか一項に記載の基板ステージ。
- 前記周辺部材の前記平坦部は、前記基板ホルダに保持された前記基板の表面がほぼ同じ高さになるように設けられていることを特徴とする請求項12〜16のいずれか一項に記載の基板ステージ。
- 前記基板ホルダは、
前記基板の裏面を支持する支持部と、
前記支持部の周囲に配置され、前記支持部に支持された前記基板の裏面に対向する上面を有した壁部と、
を含み、
前記壁部は、前記支持部に支持された前記基板の前記切欠部の形状に対応する形状に形成されていることを特徴とする請求項12〜17のいずれか一項に記載の基板ステージ。 - 前記基板ホルダは、前記壁部に囲まれた空間内のガスを吸引可能なように該空間に接続された流路を備えることを特徴とする請求項18に記載の基板ステージ。
- 前記基板ホルダに保持された前記基板と前記周辺部材との間のギャップを介して前記液浸領域から前記基板ホルダの外側の空間へ流入する前記液体を排出可能なように該外側の空間に接続された排出流路を備えることを特徴とする請求項12〜19のいずれか一項に記載の基板ステージ。
- 前記基板ホルダに保持された前記基板の側面と前記周辺部材との間のギャップを介して前記液浸領域から前記基板ホルダの外側の空間へ流入する前記液体を排出可能なように該外側の空間に接続された排出流路を備え、
前記基板ホルダは、
前記基板の裏面を支持する支持部と、
前記支持部の周囲に配置され、前記支持部に支持された前記基板の裏面に対向する上面を有した壁部と、
前記壁部に囲まれた空間内のガスを吸引可能なように該空間に接続された流路と、
を含み、
前記排出流路は、前記壁部の外側の空間に接続されていることを特徴とする請求項12〜19のいずれか一項に記載の基板ステージ。 - 投影光学系と、該投影光学系の像面側に供給される液体により形成される液浸領域とを介して基板を露光する露光装置であって、
前記投影光学系の像面側に配置され、前記基板を保持して移動可能な請求項12〜21のいずれか一項に記載の基板ステージを備えることを特徴とする露光装置。 - マスクのパターンを、請求項22に記載の露光装置を用いて基板に露光することを含むデバイス製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009231860A JP5152143B2 (ja) | 2003-06-13 | 2009-10-05 | 基板ステージ、露光装置、及びデバイス製造方法 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003169904 | 2003-06-13 | ||
JP2003169904 | 2003-06-13 | ||
JP2003383887 | 2003-11-13 | ||
JP2003383887 | 2003-11-13 | ||
JP2004039654 | 2004-02-17 | ||
JP2004039654 | 2004-02-17 | ||
JP2009231860A JP5152143B2 (ja) | 2003-06-13 | 2009-10-05 | 基板ステージ、露光装置、及びデバイス製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005507005A Division JP4415939B2 (ja) | 2003-06-13 | 2004-06-11 | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010022454A Division JP5152215B2 (ja) | 2003-06-13 | 2010-02-03 | 露光装置、及びデバイス製造方法 |
JP2012193619A Division JP5692188B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2012193620A Division JP5692189B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010010703A JP2010010703A (ja) | 2010-01-14 |
JP5152143B2 true JP5152143B2 (ja) | 2013-02-27 |
Family
ID=33556144
Family Applications (11)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005507005A Expired - Fee Related JP4415939B2 (ja) | 2003-06-13 | 2004-06-11 | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
JP2009231860A Expired - Fee Related JP5152143B2 (ja) | 2003-06-13 | 2009-10-05 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2010022454A Expired - Fee Related JP5152215B2 (ja) | 2003-06-13 | 2010-02-03 | 露光装置、及びデバイス製造方法 |
JP2012083220A Expired - Fee Related JP5699979B2 (ja) | 2003-06-13 | 2012-03-30 | 露光装置、デバイス製造方法、及び露光方法 |
JP2012193619A Expired - Fee Related JP5692188B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2012193620A Expired - Fee Related JP5692189B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2014044468A Expired - Fee Related JP5817869B2 (ja) | 2003-06-13 | 2014-03-07 | 露光装置、露光方法、及びデバイス製造方法 |
JP2015070170A Expired - Fee Related JP6172196B2 (ja) | 2003-06-13 | 2015-03-30 | 基板ステージ |
JP2016043921A Expired - Fee Related JP6256498B2 (ja) | 2003-06-13 | 2016-03-07 | 基板ステージ |
JP2017107690A Expired - Fee Related JP6477785B2 (ja) | 2003-06-13 | 2017-05-31 | 露光装置、及びデバイス製造方法 |
JP2018183797A Withdrawn JP2019003218A (ja) | 2003-06-13 | 2018-09-28 | 基板ステージ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005507005A Expired - Fee Related JP4415939B2 (ja) | 2003-06-13 | 2004-06-11 | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
Family Applications After (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010022454A Expired - Fee Related JP5152215B2 (ja) | 2003-06-13 | 2010-02-03 | 露光装置、及びデバイス製造方法 |
JP2012083220A Expired - Fee Related JP5699979B2 (ja) | 2003-06-13 | 2012-03-30 | 露光装置、デバイス製造方法、及び露光方法 |
JP2012193619A Expired - Fee Related JP5692188B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2012193620A Expired - Fee Related JP5692189B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2014044468A Expired - Fee Related JP5817869B2 (ja) | 2003-06-13 | 2014-03-07 | 露光装置、露光方法、及びデバイス製造方法 |
JP2015070170A Expired - Fee Related JP6172196B2 (ja) | 2003-06-13 | 2015-03-30 | 基板ステージ |
JP2016043921A Expired - Fee Related JP6256498B2 (ja) | 2003-06-13 | 2016-03-07 | 基板ステージ |
JP2017107690A Expired - Fee Related JP6477785B2 (ja) | 2003-06-13 | 2017-05-31 | 露光装置、及びデバイス製造方法 |
JP2018183797A Withdrawn JP2019003218A (ja) | 2003-06-13 | 2018-09-28 | 基板ステージ |
Country Status (7)
Country | Link |
---|---|
US (9) | US7483119B2 (ja) |
EP (5) | EP3104396B1 (ja) |
JP (11) | JP4415939B2 (ja) |
KR (9) | KR101940892B1 (ja) |
HK (3) | HK1196900A1 (ja) |
TW (7) | TWI409853B (ja) |
WO (1) | WO2004112108A1 (ja) |
Families Citing this family (136)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101129213B1 (ko) * | 2003-04-10 | 2012-03-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP2264531B1 (en) * | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
WO2005020299A1 (ja) | 2003-08-21 | 2005-03-03 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
CN101303536B (zh) * | 2003-08-29 | 2011-02-09 | 株式会社尼康 | 曝光装置和器件加工方法 |
EP1679738A4 (en) * | 2003-10-28 | 2008-08-06 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3139214B1 (en) | 2003-12-03 | 2019-01-30 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
ATE467902T1 (de) * | 2004-01-05 | 2010-05-15 | Nikon Corp | Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren |
JP4572539B2 (ja) * | 2004-01-19 | 2010-11-04 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
JP4973754B2 (ja) * | 2004-03-04 | 2012-07-11 | 株式会社ニコン | 露光方法及び露光装置、デバイス製造方法 |
JP4622340B2 (ja) * | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
JP2005302880A (ja) * | 2004-04-08 | 2005-10-27 | Canon Inc | 液浸式露光装置 |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG10201710046XA (en) * | 2004-06-09 | 2018-01-30 | Nippon Kogaku Kk | Substrate holding device, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate |
JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1783823A4 (en) | 2004-07-21 | 2009-07-22 | Nikon Corp | EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101106496B1 (ko) | 2004-09-17 | 2012-01-20 | 가부시키가이샤 니콘 | 기판 유지 장치, 노광 장치 및 디바이스 제조 방법 |
EP1804279A4 (en) * | 2004-09-17 | 2008-04-09 | Nikon Corp | SUBSTRATE FOR EXPOSURE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
JP4720747B2 (ja) * | 2004-12-02 | 2011-07-13 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
WO2006064851A1 (ja) | 2004-12-15 | 2006-06-22 | Nikon Corporation | 基板保持装置、露光装置、及びデバイス製造方法 |
JP4551758B2 (ja) * | 2004-12-27 | 2010-09-29 | 株式会社東芝 | 液浸露光方法および半導体装置の製造方法 |
JP4488890B2 (ja) * | 2004-12-27 | 2010-06-23 | 株式会社東芝 | レジストパターン形成方法及び半導体装置の製造方法 |
US7491661B2 (en) * | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
SG124359A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JPWO2006077859A1 (ja) * | 2005-01-18 | 2008-06-19 | 株式会社ニコン | 液体除去装置、露光装置、及びデバイス製造方法 |
JP2006202825A (ja) * | 2005-01-18 | 2006-08-03 | Jsr Corp | 液浸型露光装置 |
WO2006101120A1 (ja) * | 2005-03-23 | 2006-09-28 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
KR101396620B1 (ko) | 2005-04-25 | 2014-05-16 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
JP4752320B2 (ja) * | 2005-04-28 | 2011-08-17 | 株式会社ニコン | 基板保持装置及び露光装置、基板保持方法、露光方法、並びにデバイス製造方法 |
US7433016B2 (en) * | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006313766A (ja) * | 2005-05-06 | 2006-11-16 | Nikon Corp | 基板保持装置及びステージ装置並びに露光装置 |
JP4761055B2 (ja) * | 2005-06-10 | 2011-08-31 | 信越化学工業株式会社 | パターン形成方法 |
US7417707B2 (en) * | 2005-06-29 | 2008-08-26 | Corbett Blaise L | Introduction of an intermediary refractive layer for immersion lithography |
JP3997245B2 (ja) * | 2005-10-04 | 2007-10-24 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US8011915B2 (en) | 2005-11-04 | 2011-09-06 | Asml Netherlands B.V. | Imprint lithography |
US7878791B2 (en) | 2005-11-04 | 2011-02-01 | Asml Netherlands B.V. | Imprint lithography |
US7633073B2 (en) * | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
WO2007066758A1 (ja) * | 2005-12-08 | 2007-06-14 | Nikon Corporation | 基板保持装置、露光装置、露光方法、及びデバイス製造方法 |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446859B2 (en) * | 2006-01-27 | 2008-11-04 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
US7310132B2 (en) * | 2006-03-17 | 2007-12-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
US8027019B2 (en) * | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20080108341A (ko) | 2006-04-03 | 2008-12-12 | 가부시키가이샤 니콘 | 액침 액체에 대해 소용매성인 입사면 및 광학 윈도우 |
US7978308B2 (en) * | 2006-05-15 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2037486A4 (en) * | 2006-05-18 | 2012-01-11 | Nikon Corp | EXPOSURE METHOD AND DEVICE, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD |
US20070273856A1 (en) | 2006-05-25 | 2007-11-29 | Nikon Corporation | Apparatus and methods for inhibiting immersion liquid from flowing below a substrate |
JP2007335476A (ja) * | 2006-06-12 | 2007-12-27 | Canon Inc | 露光装置及びデバイス製造方法 |
US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2008108766A (ja) * | 2006-10-23 | 2008-05-08 | Toppan Printing Co Ltd | チャックおよびスピンコータ装置 |
US20080100812A1 (en) * | 2006-10-26 | 2008-05-01 | Nikon Corporation | Immersion lithography system and method having a wafer chuck made of a porous material |
US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US8208116B2 (en) | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US20080137055A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8416383B2 (en) * | 2006-12-13 | 2013-04-09 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20080241489A1 (en) * | 2007-03-30 | 2008-10-02 | Renesas Technology Corp. | Method of forming resist pattern and semiconductor device manufactured with the same |
US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
US7561250B2 (en) * | 2007-06-19 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus having parts with a coated film adhered thereto |
US8705010B2 (en) | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
TWI450047B (zh) * | 2007-07-13 | 2014-08-21 | Mapper Lithography Ip Bv | 微影系統、夾緊方法及晶圓台 |
JP4961299B2 (ja) * | 2007-08-08 | 2012-06-27 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP4533416B2 (ja) * | 2007-09-25 | 2010-09-01 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP5369443B2 (ja) * | 2008-02-05 | 2013-12-18 | 株式会社ニコン | ステージ装置、露光装置、露光方法、及びデバイス製造方法 |
US20090218743A1 (en) * | 2008-02-29 | 2009-09-03 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, exposing method, device fabricating method, plate member, and wall |
JP2009260264A (ja) * | 2008-03-24 | 2009-11-05 | Canon Inc | 露光装置およびデバイス製造方法 |
JP5097166B2 (ja) * | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
NL1036924A1 (nl) * | 2008-06-02 | 2009-12-03 | Asml Netherlands Bv | Substrate table, lithographic apparatus and device manufacturing method. |
NL2002983A1 (nl) * | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | A lithographic apparatus and a method of operating the lithographic apparatus. |
JP2010021370A (ja) * | 2008-07-10 | 2010-01-28 | Canon Inc | 液浸露光装置およびデバイス製造方法 |
JP2010140958A (ja) * | 2008-12-09 | 2010-06-24 | Canon Inc | 露光装置及びデバイス製造方法 |
EP2196857A3 (en) * | 2008-12-09 | 2010-07-21 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
JP5001343B2 (ja) * | 2008-12-11 | 2012-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法 |
JP4853530B2 (ja) * | 2009-02-27 | 2012-01-11 | 株式会社豊田中央研究所 | 可動部を有するマイクロデバイス |
JP5398307B2 (ja) * | 2009-03-06 | 2014-01-29 | 株式会社東芝 | 半導体装置の製造方法 |
NL2004305A (en) | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
NL2004807A (en) * | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Substrate table for a lithographic apparatus, litographic apparatus, method of using a substrate table and device manufacturing method. |
US8913230B2 (en) * | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005120A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005666A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005874A (en) * | 2010-01-22 | 2011-07-25 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
TW201630105A (zh) * | 2015-02-12 | 2016-08-16 | 漢民科技股份有限公司 | 晶圓保持器 |
US8298729B2 (en) | 2010-03-18 | 2012-10-30 | Micron Technology, Inc. | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks |
JP5131312B2 (ja) * | 2010-04-26 | 2013-01-30 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US8598538B2 (en) * | 2010-09-07 | 2013-12-03 | Nikon Corporation | Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method |
NL2007802A (en) | 2010-12-21 | 2012-06-25 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a device manufacturing method. |
US9329496B2 (en) * | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
CN104024159B (zh) | 2011-10-18 | 2015-11-25 | 东亚合成株式会社 | 氯代聚硅烷的制造方法及流化床反应装置 |
JP5957540B2 (ja) | 2012-02-03 | 2016-07-27 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板ホルダ製造方法 |
EP2856262B1 (en) | 2012-05-29 | 2019-09-25 | ASML Netherlands B.V. | Support apparatus, lithographic apparatus and device manufacturing method |
JP2014045090A (ja) * | 2012-08-27 | 2014-03-13 | Toshiba Corp | 液浸露光装置 |
JP6155581B2 (ja) * | 2012-09-14 | 2017-07-05 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法 |
CN105934715B (zh) * | 2014-01-20 | 2019-01-01 | Asml荷兰有限公司 | 衬底保持件、用于光刻设备的支撑台、光刻设备和器件制造方法 |
KR102005649B1 (ko) * | 2014-12-12 | 2019-10-01 | 캐논 가부시끼가이샤 | 기판 유지 장치, 리소그래피 장치, 및 물품의 제조 방법 |
TWI741654B (zh) * | 2015-03-31 | 2021-10-01 | 日商尼康股份有限公司 | 曝光裝置、平面顯示器之製造方法、元件製造方法、及曝光方法 |
NL2016811A (en) | 2015-06-11 | 2016-12-12 | Asml Netherlands Bv | Lithographic apparatus and method for loading a substrate |
NL2017014A (en) | 2015-06-23 | 2016-12-29 | Asml Netherlands Bv | A Support Apparatus, a Lithographic Apparatus and a Device Manufacturing Method |
US10254256B2 (en) | 2015-10-01 | 2019-04-09 | Thermo Hypersil-Keystone Llc | Method of packing chromatographic columns, packed chromatographic columns for use at high pressures and uses thereof |
JP6751759B2 (ja) | 2015-12-08 | 2020-09-09 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板テーブル、リソグラフィ装置、及びリソグラフィ装置を操作する方法 |
NL2017698A (en) * | 2015-12-15 | 2017-06-26 | Asml Netherlands Bv | A Substrate Holder, a Lithographic Apparatus and Method of Manufacturing Devices |
US10705426B2 (en) | 2016-05-12 | 2020-07-07 | Asml Netherlands B.V. | Extraction body for lithographic apparatus |
US10185226B2 (en) * | 2016-07-14 | 2019-01-22 | Canon Kabushiki Kaisha | Stage apparatus, lithography apparatus, and method of manufacturing article |
JP6978840B2 (ja) * | 2017-02-28 | 2021-12-08 | 株式会社Screenホールディングス | 基板処理装置および基板保持装置 |
KR102450292B1 (ko) * | 2017-06-06 | 2022-10-04 | 에이에스엠엘 네델란즈 비.브이. | 지지 테이블로부터 대상물을 언로딩하는 방법 |
JP6418281B2 (ja) * | 2017-06-07 | 2018-11-07 | 株式会社ニコン | 露光装置 |
US11123845B2 (en) | 2017-06-21 | 2021-09-21 | Hp Indigo B.V. | Vacuum tables |
JP7015910B2 (ja) | 2017-10-12 | 2022-02-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置において使用される基板ホルダ |
JP7145212B2 (ja) | 2017-11-10 | 2022-09-30 | アプライド マテリアルズ インコーポレイテッド | 両面処理のためのパターニングされたチャック |
JP7164605B2 (ja) | 2017-12-13 | 2022-11-01 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置で使用するための基板ホルダ |
JP2019193995A (ja) * | 2018-05-02 | 2019-11-07 | カンタツ株式会社 | 積層造形装置および積層造形装置の制御方法 |
WO2019226525A1 (en) * | 2018-05-23 | 2019-11-28 | Ii-Vi Delaware, Inc. | Apparatus for supporting thinned semiconductor wafers |
US11482417B2 (en) * | 2019-08-23 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing semiconductor structure |
US11638882B2 (en) * | 2020-04-26 | 2023-05-02 | Shantou Chenghai Lichengfeng Plastic Products Factory | Wall-climbing vehicle and bottom cover of such vehicle |
KR102381348B1 (ko) * | 2020-10-29 | 2022-03-30 | 한국전기연구원 | 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법 |
KR20220090909A (ko) | 2020-12-23 | 2022-06-30 | 정주은 | 수분 감지센서를 이용한 화분 관리 |
CN113411937B (zh) * | 2021-05-07 | 2022-12-27 | 深圳市声光行科技发展有限公司 | 一种舞台灯光控制平台 |
WO2023241893A1 (en) * | 2022-06-15 | 2023-12-21 | Asml Netherlands B.V. | Substrate support and lithographic apparatus |
Family Cites Families (257)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US221563A (en) * | 1879-11-11 | Arthur l | ||
DE221563C (ja) | ||||
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) * | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62221130A (ja) * | 1986-03-24 | 1987-09-29 | Toshiba Corp | 真空チヤツク装置 |
JPS6394627A (ja) * | 1986-10-09 | 1988-04-25 | Nec Corp | 半導体の製造装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH0793254B2 (ja) * | 1987-07-22 | 1995-10-09 | 松下電子工業株式会社 | レジスト膜形成用基板の処理方法 |
JPH0831515B2 (ja) * | 1988-06-21 | 1996-03-27 | 株式会社ニコン | 基板の吸着装置 |
JP2978192B2 (ja) * | 1990-02-19 | 1999-11-15 | 株式会社ピュアレックス | 半導体ウエハー試料作成法 |
JP2897355B2 (ja) * | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH05235151A (ja) * | 1992-02-20 | 1993-09-10 | Canon Inc | 基板保持盤 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
US5591958A (en) * | 1993-06-14 | 1997-01-07 | Nikon Corporation | Scanning exposure method and apparatus |
JP3412704B2 (ja) * | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
JPH06326174A (ja) * | 1993-05-12 | 1994-11-25 | Hitachi Ltd | ウェハ真空吸着装置 |
JPH0781978A (ja) | 1993-06-18 | 1995-03-28 | Olympus Optical Co Ltd | ガラス製光学部品における撥水性を有する反射防止膜 |
JP2890089B2 (ja) * | 1993-09-06 | 1999-05-10 | 東京エレクトロン株式会社 | 処理装置 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) * | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JP3387075B2 (ja) * | 1994-12-12 | 2003-03-17 | 株式会社ニコン | 走査露光方法、露光装置、及び走査型露光装置 |
JPH08250402A (ja) * | 1995-03-15 | 1996-09-27 | Nikon Corp | 走査型露光方法及び装置 |
JP3312164B2 (ja) * | 1995-04-07 | 2002-08-05 | 日本電信電話株式会社 | 真空吸着装置 |
JPH0936212A (ja) * | 1995-05-16 | 1997-02-07 | Shinko Electric Co Ltd | 静電チャック |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5923408A (en) | 1996-01-31 | 1999-07-13 | Canon Kabushiki Kaisha | Substrate holding system and exposure apparatus using the same |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
SG102627A1 (en) * | 1996-11-28 | 2004-03-26 | Nikon Corp | Lithographic device |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
JP2000505958A (ja) | 1996-12-24 | 2000-05-16 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 2個の物品ホルダを有する二次元バランス位置決め装置及びこの位置決め装置を有するリソグラフ装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) * | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US6381013B1 (en) * | 1997-06-25 | 2002-04-30 | Northern Edge Associates | Test slide for microscopes and method for the production of such a slide |
JPH1116816A (ja) * | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
JP4001661B2 (ja) * | 1997-07-08 | 2007-10-31 | 沖電気工業株式会社 | ウェハ載置台、ウェハ裏面の処理方法、露光装置、および回転塗布装置 |
JPH11111819A (ja) * | 1997-09-30 | 1999-04-23 | Asahi Kasei Micro Syst Co Ltd | ウェハーの固定方法及び露光装置 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
JPH11163103A (ja) * | 1997-11-25 | 1999-06-18 | Hitachi Ltd | 半導体装置の製造方法および製造装置 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
US6208407B1 (en) * | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
WO1999039999A1 (fr) * | 1998-02-09 | 1999-08-12 | Nikon Corporation | Appareil de support d'une plaque de base, appareil et procede de transport de cette plaque, appareil de remplacement de cette plaque et appareil d'exposition et procede de fabrication dudit appareil |
JPH11239758A (ja) * | 1998-02-26 | 1999-09-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
AU3849199A (en) | 1998-05-19 | 1999-12-06 | Nikon Corporation | Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method |
US6819414B1 (en) | 1998-05-19 | 2004-11-16 | Nikon Corporation | Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method |
US6036586A (en) * | 1998-07-29 | 2000-03-14 | Micron Technology, Inc. | Apparatus and method for reducing removal forces for CMP pads |
JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
KR20010112496A (ko) * | 1999-05-20 | 2001-12-20 | 시마무라 테루오 | 홀더용 콘테이너, 노광장치 및 디바이스 제조방법, 그리고디바이스 제조장치 |
KR100699241B1 (ko) | 1999-09-20 | 2007-03-27 | 가부시키가이샤 니콘 | 패럴렐 링크기구, 노광장치 및 그의 제조방법, 그리고디바이스 제조방법 |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
KR100886399B1 (ko) * | 2000-01-28 | 2009-03-02 | 히다치 도쿄 에렉트로닉스 가부시키가이샤 | 반도체 장치의 제조방법 |
JP2001332609A (ja) * | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
KR20010095087A (ko) | 2000-03-30 | 2001-11-03 | 시마무라 테루오 | 노광장치, 노광방법 및 디바이스의 제조방법 |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002229215A (ja) * | 2001-01-30 | 2002-08-14 | Nikon Corp | 露光方法及び露光装置 |
EP1231514A1 (en) | 2001-02-13 | 2002-08-14 | Asm Lithography B.V. | Measurement of wavefront aberrations in a lithographic projection apparatus |
JP2002248344A (ja) * | 2001-02-26 | 2002-09-03 | Nikon Corp | 極端紫外光発生装置並びにそれを用いた露光装置及び半導体製造方法 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
JP4412450B2 (ja) | 2001-10-05 | 2010-02-10 | 信越化学工業株式会社 | 反射防止フィルター |
US7196212B2 (en) * | 2001-10-05 | 2007-03-27 | Shin-Etsu Chemical Co., Ltd. | Perfluoropolyether-modified silane, surface treating agent, and antireflection filter |
JP2003124089A (ja) * | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
TW521320B (en) * | 2001-12-10 | 2003-02-21 | Via Tech Inc | Device and method for substrate exposure |
JP2003240906A (ja) | 2002-02-20 | 2003-08-27 | Dainippon Printing Co Ltd | 反射防止体およびその製造方法 |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
US6828542B2 (en) | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
KR100526717B1 (ko) * | 2002-06-14 | 2005-11-08 | 에이에스엠엘 네델란즈 비.브이. | 자체-조합된 단일층을 갖는 광학요소를 포함하는 euv리소그래피 투영장치, 자체-조합된 단일층을 갖는광학요소, 자체-조합된 단일층을 적용하는 방법, 디바이스제조방법 및 이에 따라 제조된 디바이스 |
TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6988327B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
KR100585476B1 (ko) * | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
CN101349876B (zh) * | 2002-11-12 | 2010-12-01 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
EP1429188B1 (en) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
JP4595320B2 (ja) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
WO2004053955A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
SG150388A1 (en) | 2002-12-10 | 2009-03-30 | Nikon Corp | Exposure apparatus and method for producing device |
DE60326384D1 (de) | 2002-12-13 | 2009-04-09 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US7514699B2 (en) | 2002-12-19 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
WO2004057590A1 (en) | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP2005250511A (ja) * | 2003-02-20 | 2005-09-15 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料による保護膜を有するレジスト膜、および該保護膜を用いたレジストパターン形成方法 |
TW200424767A (en) * | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
TWI247339B (en) * | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
EP2950148B1 (en) | 2003-04-10 | 2016-09-21 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
KR101129213B1 (ko) | 2003-04-10 | 2012-03-27 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 액체를 수집하는 런-오프 경로 |
KR101431938B1 (ko) | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG2013077797A (en) | 2003-04-11 | 2017-02-27 | Nippon Kogaku Kk | Cleanup method for optics in immersion lithography |
SG139736A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
EP1614000B1 (en) | 2003-04-17 | 2012-01-18 | Nikon Corporation | Immersion lithographic apparatus |
TW200424730A (en) | 2003-05-03 | 2004-11-16 | Jiahn-Chang Wu | Projector with UV light source. |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI282487B (en) * | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
TWI503865B (zh) * | 2003-05-23 | 2015-10-11 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1486827B1 (en) * | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
DE60308161T2 (de) * | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
JP4697138B2 (ja) | 2003-07-08 | 2011-06-08 | 株式会社ニコン | 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 |
US7738074B2 (en) * | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005057294A (ja) * | 2003-08-07 | 2005-03-03 | Asml Netherlands Bv | インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法 |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
CN101430508B (zh) | 2003-09-03 | 2011-08-10 | 株式会社尼康 | 为浸没光刻提供流体的装置和方法 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) * | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1519230A1 (en) * | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101335736B1 (ko) | 2003-09-29 | 2013-12-02 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
DE60302897T2 (de) * | 2003-09-29 | 2006-08-03 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP2005136374A (ja) * | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
EP1524557A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7352433B2 (en) * | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
WO2005050324A2 (en) | 2003-11-05 | 2005-06-02 | Dsm Ip Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
JP2005150290A (ja) | 2003-11-13 | 2005-06-09 | Canon Inc | 露光装置およびデバイスの製造方法 |
EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
US7528929B2 (en) * | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10355301B3 (de) * | 2003-11-27 | 2005-06-23 | Infineon Technologies Ag | Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175016A (ja) * | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) * | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
KR101281397B1 (ko) * | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
JP4308638B2 (ja) * | 2003-12-17 | 2009-08-05 | パナソニック株式会社 | パターン形成方法 |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
JP2005183744A (ja) | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101407204B1 (ko) * | 2004-01-14 | 2014-06-13 | 칼 짜이스 에스엠티 게엠베하 | 투영 대물렌즈 |
KR101165862B1 (ko) | 2004-01-16 | 2012-07-17 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US8852850B2 (en) * | 2004-02-03 | 2014-10-07 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
JP2007522508A (ja) | 2004-02-13 | 2007-08-09 | カール・ツアイス・エスエムテイ・アーゲー | マイクロリソグラフィック投影露光装置のための投影対物レンズ |
CN1922528A (zh) | 2004-02-18 | 2007-02-28 | 康宁股份有限公司 | 用于具有深紫外光的高数值孔径成象的反折射成象系统 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) * | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) * | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20170028451A (ko) | 2004-05-17 | 2017-03-13 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101257960B1 (ko) * | 2004-06-04 | 2013-04-24 | 칼 짜이스 에스엠테 게엠베하 | 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템 |
WO2005119369A1 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | Projection system with compensation of intensity variatons and compensation element therefor |
SG10201710046XA (en) * | 2004-06-09 | 2018-01-30 | Nippon Kogaku Kk | Substrate holding device, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate |
KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101106496B1 (ko) * | 2004-09-17 | 2012-01-20 | 가부시키가이샤 니콘 | 기판 유지 장치, 노광 장치 및 디바이스 제조 방법 |
KR101236120B1 (ko) * | 2004-10-26 | 2013-02-28 | 가부시키가이샤 니콘 | 기판 처리 방법, 노광 장치 및 디바이스 제조 방법 |
US7230681B2 (en) * | 2004-11-18 | 2007-06-12 | International Business Machines Corporation | Method and apparatus for immersion lithography |
JP2006270057A (ja) | 2005-02-28 | 2006-10-05 | Canon Inc | 露光装置 |
KR101396620B1 (ko) * | 2005-04-25 | 2014-05-16 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US20070177119A1 (en) * | 2006-02-02 | 2007-08-02 | Keiko Chiba | Exposure apparatus and device manufacturing method |
-
2004
- 2004-06-11 EP EP16155448.0A patent/EP3104396B1/en not_active Not-in-force
- 2004-06-11 KR KR1020167026062A patent/KR101940892B1/ko active IP Right Grant
- 2004-06-11 TW TW100137115A patent/TWI409853B/zh not_active IP Right Cessation
- 2004-06-11 EP EP14150747.5A patent/EP2738792B1/en not_active Not-in-force
- 2004-06-11 EP EP04746086.0A patent/EP1641028B1/en not_active Not-in-force
- 2004-06-11 JP JP2005507005A patent/JP4415939B2/ja not_active Expired - Fee Related
- 2004-06-11 KR KR1020127025739A patent/KR101528016B1/ko active IP Right Grant
- 2004-06-11 TW TW107102421A patent/TW201818451A/zh unknown
- 2004-06-11 KR KR1020057023920A patent/KR101242815B1/ko active IP Right Grant
- 2004-06-11 EP EP15165192.4A patent/EP2937893B1/en not_active Not-in-force
- 2004-06-11 TW TW98124811A patent/TWI467634B/zh not_active IP Right Cessation
- 2004-06-11 TW TW105104740A patent/TWI607292B/zh not_active IP Right Cessation
- 2004-06-11 KR KR1020147007168A patent/KR101520591B1/ko active IP Right Grant
- 2004-06-11 WO PCT/JP2004/008578 patent/WO2004112108A1/ja active Application Filing
- 2004-06-11 KR KR1020157002702A patent/KR101729866B1/ko active IP Right Grant
- 2004-06-11 KR KR1020137020081A patent/KR101528089B1/ko active IP Right Grant
- 2004-06-11 KR KR1020127028313A patent/KR101421866B1/ko active IP Right Grant
- 2004-06-11 EP EP18162502.1A patent/EP3401946A1/en not_active Withdrawn
- 2004-06-11 KR KR1020117020347A patent/KR101290021B1/ko active IP Right Grant
- 2004-06-11 TW TW093116810A patent/TW200511388A/zh not_active IP Right Cessation
- 2004-06-11 TW TW103128271A patent/TW201445617A/zh not_active IP Right Cessation
- 2004-06-11 TW TW105128062A patent/TWI619148B/zh not_active IP Right Cessation
- 2004-06-11 KR KR1020187028939A patent/KR20180112884A/ko not_active Application Discontinuation
-
2005
- 2005-12-09 US US11/297,324 patent/US7483119B2/en not_active Expired - Fee Related
-
2006
- 2006-06-08 US US11/448,927 patent/US20060227312A1/en not_active Abandoned
-
2008
- 2008-01-10 US US12/007,450 patent/US8040491B2/en not_active Expired - Fee Related
- 2008-09-10 US US12/232,064 patent/US8384880B2/en not_active Expired - Fee Related
- 2008-09-10 US US12/232,063 patent/US8208117B2/en not_active Expired - Fee Related
-
2009
- 2009-10-05 JP JP2009231860A patent/JP5152143B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-03 JP JP2010022454A patent/JP5152215B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012083220A patent/JP5699979B2/ja not_active Expired - Fee Related
- 2012-09-03 JP JP2012193619A patent/JP5692188B2/ja not_active Expired - Fee Related
- 2012-09-03 JP JP2012193620A patent/JP5692189B2/ja not_active Expired - Fee Related
-
2013
- 2013-01-30 US US13/754,112 patent/US9268237B2/en not_active Expired - Fee Related
- 2013-01-30 US US13/753,969 patent/US9019467B2/en active Active
-
2014
- 2014-03-07 JP JP2014044468A patent/JP5817869B2/ja not_active Expired - Fee Related
- 2014-10-14 HK HK14110233.0A patent/HK1196900A1/xx not_active IP Right Cessation
-
2015
- 2015-03-30 JP JP2015070170A patent/JP6172196B2/ja not_active Expired - Fee Related
- 2015-04-27 US US14/696,898 patent/US9846371B2/en not_active Expired - Fee Related
-
2016
- 2016-03-07 JP JP2016043921A patent/JP6256498B2/ja not_active Expired - Fee Related
- 2016-03-08 HK HK16102657.2A patent/HK1214680A1/zh not_active IP Right Cessation
-
2017
- 2017-05-31 JP JP2017107690A patent/JP6477785B2/ja not_active Expired - Fee Related
- 2017-07-31 US US15/664,319 patent/US20170329234A1/en not_active Abandoned
-
2018
- 2018-09-28 JP JP2018183797A patent/JP2019003218A/ja not_active Withdrawn
-
2019
- 2019-01-18 HK HK19100965.0A patent/HK1258606A1/zh unknown
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6477785B2 (ja) | 露光装置、及びデバイス製造方法 | |
JP5910645B2 (ja) | ステージ装置、露光装置、及びデバイス製造方法 | |
JP4513534B2 (ja) | 露光装置及び露光方法、デバイス製造方法 | |
JP5445612B2 (ja) | 露光装置及び露光方法、デバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091102 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100409 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120903 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121119 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5152143 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |