JP2012248892A - 基板ステージ、露光装置、及びデバイス製造方法 - Google Patents
基板ステージ、露光装置、及びデバイス製造方法 Download PDFInfo
- Publication number
- JP2012248892A JP2012248892A JP2012193620A JP2012193620A JP2012248892A JP 2012248892 A JP2012248892 A JP 2012248892A JP 2012193620 A JP2012193620 A JP 2012193620A JP 2012193620 A JP2012193620 A JP 2012193620A JP 2012248892 A JP2012248892 A JP 2012248892A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- peripheral wall
- space
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
【解決手段】基板ステージは、被露光対象としての基板を保持して移動可能である。基板ステージは、第1周壁と、第1周壁の内側に形成された第2周壁と、第2周壁の内側に形成された支持部とを備え、第2周壁に囲まれた空間を負圧にすることによって、支持部に基板を保持する。
【選択図】図4
Description
本発明は、投影光学系と液体とを介してパターンの像を基板に露光する露光方法、基板を支持する基板ステージ、露光装置、及びデバイス製造方法に関するものである。
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
露光装置EXとしては、マスクMと基板Pとを同期移動してマスクMのパターンを走査露光するステップ・アンド・スキャン方式の走査型露光装置(スキャニングステッパ)の他に、マスクMと基板Pとを静止した状態でマスクMのパターンを一括露光し、基板Pを順次ステップ移動させるステップ・アンド・リピート方式の投影露光装置(ステッパ)にも適用することができる。また、本発明は基板P上で少なくとも2つのパターンを部分的に重ねて転写するステップ・アンド・スティッチ方式の露光装置にも適用できる。
Claims (12)
- 被露光対象としての基板を保持して移動可能な基板ステージにおいて、
第1周壁と、
前記第1周壁の内側に形成された第2周壁と、
前記第2周壁の内側に形成された支持部とを備え、
前記第2周壁に囲まれた空間を負圧にすることによって、前記支持部に前記基板を保持することを特徴とする基板ステージ。 - 前記第1周壁と前記第2周壁との間の空間の圧力は、前記第2周壁に囲まれた空間の圧力よりも高く設定されていることを特徴とする請求項1記載の基板ステージ。
- 前記第1周壁と前記第2周壁との間の空間も負圧にすることを特徴とする請求項2記載の基板ステージ。
- 前記第1周壁と前記第2周壁との間の空間の圧力はほぼ大気圧、又は大気圧よりも高く設定されていることを特徴とする請求項2記載の基板ステージ。
- 前記第1周壁と前記第2周壁との間の空間の圧力を調整可能であることを特徴とする請求項2に記載の基板ステージ。
- 前記第1周壁と前期第2周壁との間の空間の圧力は、前記第1周壁の外側の空間の圧力よりも高く設定されていることを特徴とする請求項2に記載の基板ステージ。
- 前記第2周壁の高さは、前記支持部よりも低いことを特徴とする請求項1に記載の基板ステージ。
- 前記第1周壁の高さは、前記支持部よりも低いことを特徴とする請求項7記載の基板ステージ。
- 前記第2周壁の上部は撥液性であることを特徴とする請求項1に記載の基板ステージ。
- 前記第1周壁の上部は撥液性であることを特徴とする請求項9記載の基板ステージ。
- 前記支持部に支持された基板の表面とほぼ面一の平坦部を備えたことを特徴とする請求項1に記載の基板ステージ。
- 前記支持部に支持された基板の切欠部と前記平坦部とのギャップを小さくするためのギャップ調整部を備えたことを特徴とする請求項11記載の基板ステージ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012193620A JP5692189B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003169904 | 2003-06-13 | ||
JP2003169904 | 2003-06-13 | ||
JP2003383887 | 2003-11-13 | ||
JP2003383887 | 2003-11-13 | ||
JP2004039654 | 2004-02-17 | ||
JP2004039654 | 2004-02-17 | ||
JP2012193620A JP5692189B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009231860A Division JP5152143B2 (ja) | 2003-06-13 | 2009-10-05 | 基板ステージ、露光装置、及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012248892A true JP2012248892A (ja) | 2012-12-13 |
JP5692189B2 JP5692189B2 (ja) | 2015-04-01 |
Family
ID=33556144
Family Applications (11)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005507005A Expired - Fee Related JP4415939B2 (ja) | 2003-06-13 | 2004-06-11 | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
JP2009231860A Expired - Fee Related JP5152143B2 (ja) | 2003-06-13 | 2009-10-05 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2010022454A Expired - Fee Related JP5152215B2 (ja) | 2003-06-13 | 2010-02-03 | 露光装置、及びデバイス製造方法 |
JP2012083220A Expired - Fee Related JP5699979B2 (ja) | 2003-06-13 | 2012-03-30 | 露光装置、デバイス製造方法、及び露光方法 |
JP2012193620A Expired - Fee Related JP5692189B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2012193619A Expired - Fee Related JP5692188B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2014044468A Expired - Fee Related JP5817869B2 (ja) | 2003-06-13 | 2014-03-07 | 露光装置、露光方法、及びデバイス製造方法 |
JP2015070170A Expired - Fee Related JP6172196B2 (ja) | 2003-06-13 | 2015-03-30 | 基板ステージ |
JP2016043921A Expired - Fee Related JP6256498B2 (ja) | 2003-06-13 | 2016-03-07 | 基板ステージ |
JP2017107690A Expired - Fee Related JP6477785B2 (ja) | 2003-06-13 | 2017-05-31 | 露光装置、及びデバイス製造方法 |
JP2018183797A Withdrawn JP2019003218A (ja) | 2003-06-13 | 2018-09-28 | 基板ステージ |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005507005A Expired - Fee Related JP4415939B2 (ja) | 2003-06-13 | 2004-06-11 | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
JP2009231860A Expired - Fee Related JP5152143B2 (ja) | 2003-06-13 | 2009-10-05 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2010022454A Expired - Fee Related JP5152215B2 (ja) | 2003-06-13 | 2010-02-03 | 露光装置、及びデバイス製造方法 |
JP2012083220A Expired - Fee Related JP5699979B2 (ja) | 2003-06-13 | 2012-03-30 | 露光装置、デバイス製造方法、及び露光方法 |
Family Applications After (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012193619A Expired - Fee Related JP5692188B2 (ja) | 2003-06-13 | 2012-09-03 | 基板ステージ、露光装置、及びデバイス製造方法 |
JP2014044468A Expired - Fee Related JP5817869B2 (ja) | 2003-06-13 | 2014-03-07 | 露光装置、露光方法、及びデバイス製造方法 |
JP2015070170A Expired - Fee Related JP6172196B2 (ja) | 2003-06-13 | 2015-03-30 | 基板ステージ |
JP2016043921A Expired - Fee Related JP6256498B2 (ja) | 2003-06-13 | 2016-03-07 | 基板ステージ |
JP2017107690A Expired - Fee Related JP6477785B2 (ja) | 2003-06-13 | 2017-05-31 | 露光装置、及びデバイス製造方法 |
JP2018183797A Withdrawn JP2019003218A (ja) | 2003-06-13 | 2018-09-28 | 基板ステージ |
Country Status (7)
Country | Link |
---|---|
US (9) | US7483119B2 (ja) |
EP (5) | EP2937893B1 (ja) |
JP (11) | JP4415939B2 (ja) |
KR (9) | KR101290021B1 (ja) |
HK (3) | HK1196900A1 (ja) |
TW (7) | TWI409853B (ja) |
WO (1) | WO2004112108A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013016839A (ja) * | 2003-06-13 | 2013-01-24 | Nikon Corp | 基板ステージ、露光装置、及びデバイス製造方法 |
Families Citing this family (136)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN1771463A (zh) * | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005006415A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
KR101381563B1 (ko) | 2003-08-21 | 2014-04-04 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
CN101303536B (zh) * | 2003-08-29 | 2011-02-09 | 株式会社尼康 | 曝光装置和器件加工方法 |
KR101121260B1 (ko) * | 2003-10-28 | 2012-03-23 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스의 제조 방법 |
JP2005159322A (ja) * | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
TWI530762B (zh) | 2003-12-03 | 2016-04-21 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
KR101547037B1 (ko) | 2003-12-15 | 2015-08-24 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20180117228A (ko) * | 2004-01-05 | 2018-10-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
JP4572539B2 (ja) * | 2004-01-19 | 2010-11-04 | 株式会社ニコン | 露光装置及び露光方法、デバイス製造方法 |
JP4622340B2 (ja) * | 2004-03-04 | 2011-02-02 | 株式会社ニコン | 露光装置、デバイス製造方法 |
JP4973754B2 (ja) * | 2004-03-04 | 2012-07-11 | 株式会社ニコン | 露光方法及び露光装置、デバイス製造方法 |
JP2005302880A (ja) * | 2004-04-08 | 2005-10-27 | Canon Inc | 液浸式露光装置 |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN102290364B (zh) | 2004-06-09 | 2016-01-13 | 尼康股份有限公司 | 基板保持装置、具备其之曝光装置、元件制造方法 |
JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1783823A4 (en) * | 2004-07-21 | 2009-07-22 | Nikon Corp | EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080318152A1 (en) * | 2004-09-17 | 2008-12-25 | Takeyuki Mizutani | Substrate for Exposure, Exposure Method and Device Manufacturing Method |
WO2006030908A1 (ja) | 2004-09-17 | 2006-03-23 | Nikon Corporation | 基板保持装置、露光装置、及びデバイス製造方法 |
JP4720747B2 (ja) * | 2004-12-02 | 2011-07-13 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US9224632B2 (en) | 2004-12-15 | 2015-12-29 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, and device fabricating method |
JP4551758B2 (ja) * | 2004-12-27 | 2010-09-29 | 株式会社東芝 | 液浸露光方法および半導体装置の製造方法 |
JP4488890B2 (ja) | 2004-12-27 | 2010-06-23 | 株式会社東芝 | レジストパターン形成方法及び半導体装置の製造方法 |
US7491661B2 (en) * | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
SG124359A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP2006202825A (ja) * | 2005-01-18 | 2006-08-03 | Jsr Corp | 液浸型露光装置 |
WO2006077859A1 (ja) * | 2005-01-18 | 2006-07-27 | Nikon Corporation | 液体除去装置、露光装置、及びデバイス製造方法 |
JP5040646B2 (ja) * | 2005-03-23 | 2012-10-03 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
EP1876635A4 (en) | 2005-04-25 | 2010-06-30 | Nikon Corp | EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD |
JP4752320B2 (ja) * | 2005-04-28 | 2011-08-17 | 株式会社ニコン | 基板保持装置及び露光装置、基板保持方法、露光方法、並びにデバイス製造方法 |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006313766A (ja) * | 2005-05-06 | 2006-11-16 | Nikon Corp | 基板保持装置及びステージ装置並びに露光装置 |
JP4761055B2 (ja) * | 2005-06-10 | 2011-08-31 | 信越化学工業株式会社 | パターン形成方法 |
WO2007002833A2 (en) * | 2005-06-29 | 2007-01-04 | Blaise Corbett | Introduction of an intermediary refractive layer for immersion lithography |
JP3997245B2 (ja) * | 2005-10-04 | 2007-10-24 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US8011915B2 (en) | 2005-11-04 | 2011-09-06 | Asml Netherlands B.V. | Imprint lithography |
US7878791B2 (en) | 2005-11-04 | 2011-02-01 | Asml Netherlands B.V. | Imprint lithography |
US7633073B2 (en) | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
EP3327759A1 (en) * | 2005-12-08 | 2018-05-30 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, exposing method, and device fabricating method |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446859B2 (en) * | 2006-01-27 | 2008-11-04 | International Business Machines Corporation | Apparatus and method for reducing contamination in immersion lithography |
US7310132B2 (en) * | 2006-03-17 | 2007-12-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
US8027019B2 (en) | 2006-03-28 | 2011-09-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007118014A2 (en) | 2006-04-03 | 2007-10-18 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids |
US7978308B2 (en) * | 2006-05-15 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2037486A4 (en) * | 2006-05-18 | 2012-01-11 | Nikon Corp | EXPOSURE METHOD AND DEVICE, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD |
US20070273856A1 (en) | 2006-05-25 | 2007-11-29 | Nikon Corporation | Apparatus and methods for inhibiting immersion liquid from flowing below a substrate |
JP2007335476A (ja) * | 2006-06-12 | 2007-12-27 | Canon Inc | 露光装置及びデバイス製造方法 |
US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2008108766A (ja) * | 2006-10-23 | 2008-05-08 | Toppan Printing Co Ltd | チャックおよびスピンコータ装置 |
US20080100812A1 (en) * | 2006-10-26 | 2008-05-01 | Nikon Corporation | Immersion lithography system and method having a wafer chuck made of a porous material |
US8208116B2 (en) | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US20080137055A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8416383B2 (en) * | 2006-12-13 | 2013-04-09 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20080241489A1 (en) * | 2007-03-30 | 2008-10-02 | Renesas Technology Corp. | Method of forming resist pattern and semiconductor device manufactured with the same |
US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
US7561250B2 (en) * | 2007-06-19 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus having parts with a coated film adhered thereto |
US8705010B2 (en) * | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
TWI450047B (zh) * | 2007-07-13 | 2014-08-21 | Mapper Lithography Ip Bv | 微影系統、夾緊方法及晶圓台 |
JP4961299B2 (ja) * | 2007-08-08 | 2012-06-27 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP4533416B2 (ja) * | 2007-09-25 | 2010-09-01 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP5369443B2 (ja) * | 2008-02-05 | 2013-12-18 | 株式会社ニコン | ステージ装置、露光装置、露光方法、及びデバイス製造方法 |
US20090218743A1 (en) * | 2008-02-29 | 2009-09-03 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, exposing method, device fabricating method, plate member, and wall |
JP2009260264A (ja) * | 2008-03-24 | 2009-11-05 | Canon Inc | 露光装置およびデバイス製造方法 |
JP5097166B2 (ja) * | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
NL1036924A1 (nl) * | 2008-06-02 | 2009-12-03 | Asml Netherlands Bv | Substrate table, lithographic apparatus and device manufacturing method. |
NL2002983A1 (nl) * | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | A lithographic apparatus and a method of operating the lithographic apparatus. |
JP2010021370A (ja) * | 2008-07-10 | 2010-01-28 | Canon Inc | 液浸露光装置およびデバイス製造方法 |
JP2010140958A (ja) * | 2008-12-09 | 2010-06-24 | Canon Inc | 露光装置及びデバイス製造方法 |
EP2196857A3 (en) | 2008-12-09 | 2010-07-21 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
JP5001343B2 (ja) | 2008-12-11 | 2012-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法 |
JP4853530B2 (ja) * | 2009-02-27 | 2012-01-11 | 株式会社豊田中央研究所 | 可動部を有するマイクロデバイス |
JP5398307B2 (ja) * | 2009-03-06 | 2014-01-29 | 株式会社東芝 | 半導体装置の製造方法 |
NL2004305A (en) | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
NL2004807A (en) * | 2009-06-30 | 2011-01-04 | Asml Netherlands Bv | Substrate table for a lithographic apparatus, litographic apparatus, method of using a substrate table and device manufacturing method. |
US8913230B2 (en) * | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005120A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
NL2005666A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
NL2005874A (en) * | 2010-01-22 | 2011-07-25 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
TW201630105A (zh) * | 2015-02-12 | 2016-08-16 | 漢民科技股份有限公司 | 晶圓保持器 |
US8298729B2 (en) | 2010-03-18 | 2012-10-30 | Micron Technology, Inc. | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks |
JP5131312B2 (ja) * | 2010-04-26 | 2013-01-30 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US8598538B2 (en) * | 2010-09-07 | 2013-12-03 | Nikon Corporation | Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method |
NL2007802A (en) | 2010-12-21 | 2012-06-25 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a device manufacturing method. |
US9329496B2 (en) * | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
WO2013057997A1 (ja) | 2011-10-18 | 2013-04-25 | 東亞合成株式会社 | クロロポリシランの製造方法および流動床反応装置 |
JP5957540B2 (ja) | 2012-02-03 | 2016-07-27 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板ホルダ製造方法 |
KR101671787B1 (ko) | 2012-05-29 | 2016-11-02 | 에이에스엠엘 네델란즈 비.브이. | 지지 장치, 리소그래피 장치 및 디바이스 제조 방법 |
JP2014045090A (ja) * | 2012-08-27 | 2014-03-13 | Toshiba Corp | 液浸露光装置 |
JP6155581B2 (ja) * | 2012-09-14 | 2017-07-05 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法 |
NL2013835A (en) * | 2014-01-20 | 2015-07-21 | Asml Netherlands Bv | Substrate holder, support table for a lithographic apparatus, lithographic apparatus and device manufacturing method. |
CN107004574B (zh) * | 2014-12-12 | 2020-06-30 | 佳能株式会社 | 基板保持装置、光刻设备以及物品制造方法 |
JP6727554B2 (ja) * | 2015-03-31 | 2020-07-22 | 株式会社ニコン | 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法 |
CN112255893A (zh) | 2015-06-11 | 2021-01-22 | Asml荷兰有限公司 | 光刻设备及用于加载衬底的方法 |
WO2016207122A1 (en) | 2015-06-23 | 2016-12-29 | Asml Netherlands B.V. | Support apparatus, lithographic apparatus and device manufacturing method |
US10254256B2 (en) | 2015-10-01 | 2019-04-09 | Thermo Hypersil-Keystone Llc | Method of packing chromatographic columns, packed chromatographic columns for use at high pressures and uses thereof |
WO2017097502A1 (en) | 2015-12-08 | 2017-06-15 | Asml Netherlands B.V. | Substrate table, lithographic apparatus and method of operating a lithographic apparatus |
US10895808B2 (en) | 2015-12-15 | 2021-01-19 | Asml Netherlands B.V. | Substrate holder, a lithographic apparatus and method of manufacturing devices |
NL2018653A (en) | 2016-05-12 | 2017-11-15 | Asml Netherlands Bv | Extraction body for lithographic apparatus |
US10185226B2 (en) * | 2016-07-14 | 2019-01-22 | Canon Kabushiki Kaisha | Stage apparatus, lithography apparatus, and method of manufacturing article |
JP6978840B2 (ja) | 2017-02-28 | 2021-12-08 | 株式会社Screenホールディングス | 基板処理装置および基板保持装置 |
KR102355867B1 (ko) * | 2017-06-06 | 2022-01-26 | 에이에스엠엘 네델란즈 비.브이. | 지지 테이블로부터 대상물을 언로딩하는 방법 |
JP6418281B2 (ja) * | 2017-06-07 | 2018-11-07 | 株式会社ニコン | 露光装置 |
US11123845B2 (en) | 2017-06-21 | 2021-09-21 | Hp Indigo B.V. | Vacuum tables |
CN111213093A (zh) * | 2017-10-12 | 2020-05-29 | Asml荷兰有限公司 | 用于在光刻设备中使用的衬底支架 |
CN111418051B (zh) | 2017-11-10 | 2024-01-12 | 应用材料公司 | 用于双面处理的图案化夹盘 |
JP7164605B2 (ja) | 2017-12-13 | 2022-11-01 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置で使用するための基板ホルダ |
JP2019193995A (ja) * | 2018-05-02 | 2019-11-07 | カンタツ株式会社 | 積層造形装置および積層造形装置の制御方法 |
WO2019226525A1 (en) * | 2018-05-23 | 2019-11-28 | Ii-Vi Delaware, Inc. | Apparatus for supporting thinned semiconductor wafers |
JP2019032552A (ja) * | 2018-10-10 | 2019-02-28 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法 |
US11482417B2 (en) * | 2019-08-23 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing semiconductor structure |
US11638882B2 (en) * | 2020-04-26 | 2023-05-02 | Shantou Chenghai Lichengfeng Plastic Products Factory | Wall-climbing vehicle and bottom cover of such vehicle |
KR102381348B1 (ko) * | 2020-10-29 | 2022-03-30 | 한국전기연구원 | 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법 |
KR20220090909A (ko) | 2020-12-23 | 2022-06-30 | 정주은 | 수분 감지센서를 이용한 화분 관리 |
CN113411937B (zh) * | 2021-05-07 | 2022-12-27 | 深圳市声光行科技发展有限公司 | 一种舞台灯光控制平台 |
WO2023241893A1 (en) * | 2022-06-15 | 2023-12-21 | Asml Netherlands B.V. | Substrate support and lithographic apparatus |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH0778750A (ja) * | 1993-09-06 | 1995-03-20 | Tokyo Electron Ltd | 処理装置 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08279549A (ja) * | 1995-04-07 | 1996-10-22 | Nippon Telegr & Teleph Corp <Ntt> | 真空吸着装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH11163103A (ja) * | 1997-11-25 | 1999-06-18 | Hitachi Ltd | 半導体装置の製造方法および製造装置 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2013016839A (ja) * | 2003-06-13 | 2013-01-24 | Nikon Corp | 基板ステージ、露光装置、及びデバイス製造方法 |
Family Cites Families (247)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US221563A (en) * | 1879-11-11 | Arthur l | ||
DE221563C (ja) | ||||
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57117238A (en) * | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) * | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62221130A (ja) * | 1986-03-24 | 1987-09-29 | Toshiba Corp | 真空チヤツク装置 |
JPS6394627A (ja) * | 1986-10-09 | 1988-04-25 | Nec Corp | 半導体の製造装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH0793254B2 (ja) * | 1987-07-22 | 1995-10-09 | 松下電子工業株式会社 | レジスト膜形成用基板の処理方法 |
JPH0831515B2 (ja) * | 1988-06-21 | 1996-03-27 | 株式会社ニコン | 基板の吸着装置 |
JP2978192B2 (ja) * | 1990-02-19 | 1999-11-15 | 株式会社ピュアレックス | 半導体ウエハー試料作成法 |
JP2897355B2 (ja) * | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH05235151A (ja) * | 1992-02-20 | 1993-09-10 | Canon Inc | 基板保持盤 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
US5591958A (en) * | 1993-06-14 | 1997-01-07 | Nikon Corporation | Scanning exposure method and apparatus |
JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
JPH06326174A (ja) * | 1993-05-12 | 1994-11-25 | Hitachi Ltd | ウェハ真空吸着装置 |
JPH0781978A (ja) | 1993-06-18 | 1995-03-28 | Olympus Optical Co Ltd | ガラス製光学部品における撥水性を有する反射防止膜 |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
JP3555230B2 (ja) * | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JP3387075B2 (ja) | 1994-12-12 | 2003-03-17 | 株式会社ニコン | 走査露光方法、露光装置、及び走査型露光装置 |
JPH08250402A (ja) * | 1995-03-15 | 1996-09-27 | Nikon Corp | 走査型露光方法及び装置 |
JPH0936212A (ja) * | 1995-05-16 | 1997-02-07 | Shinko Electric Co Ltd | 静電チャック |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5923408A (en) | 1996-01-31 | 1999-07-13 | Canon Kabushiki Kaisha | Substrate holding system and exposure apparatus using the same |
JPH1049504A (ja) * | 1996-08-02 | 1998-02-20 | Mitsubishi Electric Corp | 負荷分散バッチシステム |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
SG88824A1 (en) * | 1996-11-28 | 2002-05-21 | Nikon Corp | Projection exposure method |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
EP0890136B9 (en) | 1996-12-24 | 2003-12-10 | ASML Netherlands B.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
US6381013B1 (en) * | 1997-06-25 | 2002-04-30 | Northern Edge Associates | Test slide for microscopes and method for the production of such a slide |
JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
JP4001661B2 (ja) * | 1997-07-08 | 2007-10-31 | 沖電気工業株式会社 | ウェハ載置台、ウェハ裏面の処理方法、露光装置、および回転塗布装置 |
JPH11111819A (ja) | 1997-09-30 | 1999-04-23 | Asahi Kasei Micro Syst Co Ltd | ウェハーの固定方法及び露光装置 |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
US6208407B1 (en) * | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
JP4296587B2 (ja) * | 1998-02-09 | 2009-07-15 | 株式会社ニコン | 基板支持装置、基板搬送装置及びその方法、基板保持方法、並びに露光装置及びその製造方法 |
JPH11239758A (ja) * | 1998-02-26 | 1999-09-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
KR100604120B1 (ko) | 1998-05-19 | 2006-07-24 | 가부시키가이샤 니콘 | 수차측정장치와 측정방법 및 이 장치를 구비한투영노광장치와 이 방법을 이용한 디바이스 제조방법,노광방법 |
US6819414B1 (en) | 1998-05-19 | 2004-11-16 | Nikon Corporation | Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method |
US6036586A (en) * | 1998-07-29 | 2000-03-14 | Micron Technology, Inc. | Apparatus and method for reducing removal forces for CMP pads |
AU4779600A (en) * | 1999-05-20 | 2000-12-12 | Nikon Corporation | Container for holder exposure apparatus, device manufacturing method, and device manufacturing apparatus |
EP1137054B1 (en) | 1999-09-20 | 2006-03-15 | Nikon Corporation | Exposure system comprising a parallel link mechaniam and exposure method |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
KR100804006B1 (ko) * | 2000-01-28 | 2008-02-18 | 히다치 도쿄 에렉트로닉스 가부시키가이샤 | 웨이퍼 척 |
JP2001332609A (ja) * | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
TW522460B (en) | 2000-03-30 | 2003-03-01 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
JP2002229215A (ja) * | 2001-01-30 | 2002-08-14 | Nikon Corp | 露光方法及び露光装置 |
EP1231514A1 (en) | 2001-02-13 | 2002-08-14 | Asm Lithography B.V. | Measurement of wavefront aberrations in a lithographic projection apparatus |
JP2002248344A (ja) * | 2001-02-26 | 2002-09-03 | Nikon Corp | 極端紫外光発生装置並びにそれを用いた露光装置及び半導体製造方法 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
KR100724135B1 (ko) * | 2001-10-05 | 2007-06-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 퍼플루오로폴리에테르-변성 실란, 표면처리제, 및반사방지 필터 |
JP4412450B2 (ja) | 2001-10-05 | 2010-02-10 | 信越化学工業株式会社 | 反射防止フィルター |
JP2003124089A (ja) * | 2001-10-09 | 2003-04-25 | Nikon Corp | 荷電粒子線露光装置及び露光方法 |
TW521320B (en) * | 2001-12-10 | 2003-02-21 | Via Tech Inc | Device and method for substrate exposure |
JP2003240906A (ja) | 2002-02-20 | 2003-08-27 | Dainippon Printing Co Ltd | 反射防止体およびその製造方法 |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
US6828542B2 (en) | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
TWI249651B (en) * | 2002-06-14 | 2006-02-21 | Asml Netherlands Bv | EUV lithographic projection apparatus comprising an optical element with a self-assembled monolayer, optical element with a self-assembled monolayer, method of applying a self-assembled monolayer, device manufacturing method and device manufactured there |
AU2003256081A1 (en) | 2002-08-23 | 2004-03-11 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6988327B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1429188B1 (en) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
SG2010050110A (en) | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
JP4595320B2 (ja) | 2002-12-10 | 2010-12-08 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
JP4362867B2 (ja) | 2002-12-10 | 2009-11-11 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
CN100370533C (zh) | 2002-12-13 | 2008-02-20 | 皇家飞利浦电子股份有限公司 | 用于照射层的方法和用于将辐射导向层的装置 |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
JP2005250511A (ja) * | 2003-02-20 | 2005-09-15 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料による保護膜を有するレジスト膜、および該保護膜を用いたレジストパターン形成方法 |
TW200424767A (en) * | 2003-02-20 | 2004-11-16 | Tokyo Ohka Kogyo Co Ltd | Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
CN1771463A (zh) | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
KR101238142B1 (ko) | 2003-04-10 | 2013-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR20180089562A (ko) | 2003-04-10 | 2018-08-08 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
CN101002140B (zh) | 2003-04-11 | 2010-12-08 | 株式会社尼康 | 保持平板印刷投射透镜下面的浸没流体的设备和方法 |
EP2172809B1 (en) | 2003-04-11 | 2018-11-07 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
CN1774667A (zh) | 2003-04-17 | 2006-05-17 | 株式会社尼康 | 用在浸没式平版印刷方法中自动聚焦部件的光学配置 |
TW200424730A (en) | 2003-05-03 | 2004-11-16 | Jiahn-Chang Wu | Projector with UV light source. |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI282487B (en) | 2003-05-23 | 2007-06-11 | Canon Kk | Projection optical system, exposure apparatus, and device manufacturing method |
TWI424470B (zh) * | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1491956B1 (en) * | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
WO2005010611A2 (en) | 2003-07-08 | 2005-02-03 | Nikon Corporation | Wafer table for immersion lithography |
US7738074B2 (en) * | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005057294A (ja) * | 2003-08-07 | 2005-03-03 | Asml Netherlands Bv | インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法 |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101523180B1 (ko) | 2003-09-03 | 2015-05-26 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) * | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
DE60302897T2 (de) * | 2003-09-29 | 2006-08-03 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101441840B1 (ko) | 2003-09-29 | 2014-11-04 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
EP1519230A1 (en) * | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP2005136374A (ja) * | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1524557A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7352433B2 (en) * | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
JP2005150290A (ja) | 2003-11-13 | 2005-06-09 | Canon Inc | 露光装置およびデバイスの製造方法 |
EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
DE10355301B3 (de) * | 2003-11-27 | 2005-06-23 | Infineon Technologies Ag | Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2005175016A (ja) * | 2003-12-08 | 2005-06-30 | Canon Inc | 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法 |
JP2005175034A (ja) * | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
KR101547037B1 (ko) * | 2003-12-15 | 2015-08-24 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
JP4308638B2 (ja) * | 2003-12-17 | 2009-08-05 | パナソニック株式会社 | パターン形成方法 |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP2005183744A (ja) * | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
EP1709472B1 (en) | 2004-01-14 | 2008-08-06 | Carl Zeiss SMT AG | Catadioptric projection objective |
EP1716457B9 (en) | 2004-01-16 | 2012-04-04 | Carl Zeiss SMT GmbH | Projection system with a polarization-modulating element having a variable thickness profile |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
DE602005019689D1 (de) | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (en) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
US20070165198A1 (en) | 2004-02-13 | 2007-07-19 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
KR20070012371A (ko) | 2004-02-18 | 2007-01-25 | 코닝 인코포레이티드 | 극자외선을 갖는 고 개구수 이미지용 반사굴절 이미지시스템 |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
DE602005003665T2 (de) | 2004-05-17 | 2008-11-20 | Carl Zeiss Smt Ag | Katadioptrisches projektionsobjektiv mit zwischenbildern |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4913041B2 (ja) | 2004-06-04 | 2012-04-11 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 強度変化の補償を伴う投影系及びそのための補償素子 |
KR101257960B1 (ko) | 2004-06-04 | 2013-04-24 | 칼 짜이스 에스엠테 게엠베하 | 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템 |
CN102290364B (zh) * | 2004-06-09 | 2016-01-13 | 尼康股份有限公司 | 基板保持装置、具备其之曝光装置、元件制造方法 |
KR101378688B1 (ko) | 2004-06-21 | 2014-03-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2006030908A1 (ja) * | 2004-09-17 | 2006-03-23 | Nikon Corporation | 基板保持装置、露光装置、及びデバイス製造方法 |
WO2006046562A1 (ja) * | 2004-10-26 | 2006-05-04 | Nikon Corporation | 基板処理方法、露光装置及びデバイス製造方法 |
US7230681B2 (en) * | 2004-11-18 | 2007-06-12 | International Business Machines Corporation | Method and apparatus for immersion lithography |
JP2006270057A (ja) | 2005-02-28 | 2006-10-05 | Canon Inc | 露光装置 |
EP1876635A4 (en) * | 2005-04-25 | 2010-06-30 | Nikon Corp | EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD |
US20070177119A1 (en) * | 2006-02-02 | 2007-08-02 | Keiko Chiba | Exposure apparatus and device manufacturing method |
-
2004
- 2004-06-11 EP EP15165192.4A patent/EP2937893B1/en not_active Expired - Lifetime
- 2004-06-11 KR KR1020117020347A patent/KR101290021B1/ko active IP Right Grant
- 2004-06-11 WO PCT/JP2004/008578 patent/WO2004112108A1/ja active Application Filing
- 2004-06-11 TW TW100137115A patent/TWI409853B/zh not_active IP Right Cessation
- 2004-06-11 TW TW103128271A patent/TW201445617A/zh not_active IP Right Cessation
- 2004-06-11 EP EP16155448.0A patent/EP3104396B1/en not_active Expired - Lifetime
- 2004-06-11 KR KR1020147007168A patent/KR101520591B1/ko active IP Right Grant
- 2004-06-11 JP JP2005507005A patent/JP4415939B2/ja not_active Expired - Fee Related
- 2004-06-11 KR KR1020127025739A patent/KR101528016B1/ko active IP Right Grant
- 2004-06-11 TW TW105104740A patent/TWI607292B/zh not_active IP Right Cessation
- 2004-06-11 KR KR1020187028939A patent/KR20180112884A/ko not_active Application Discontinuation
- 2004-06-11 TW TW105128062A patent/TWI619148B/zh not_active IP Right Cessation
- 2004-06-11 KR KR1020167026062A patent/KR101940892B1/ko active IP Right Grant
- 2004-06-11 EP EP18162502.1A patent/EP3401946A1/en not_active Withdrawn
- 2004-06-11 TW TW107102421A patent/TW201818451A/zh unknown
- 2004-06-11 KR KR1020157002702A patent/KR101729866B1/ko active IP Right Grant
- 2004-06-11 TW TW98124811A patent/TWI467634B/zh not_active IP Right Cessation
- 2004-06-11 EP EP14150747.5A patent/EP2738792B1/en not_active Expired - Lifetime
- 2004-06-11 KR KR1020127028313A patent/KR101421866B1/ko active IP Right Grant
- 2004-06-11 TW TW093116810A patent/TW200511388A/zh not_active IP Right Cessation
- 2004-06-11 EP EP04746086.0A patent/EP1641028B1/en not_active Expired - Lifetime
- 2004-06-11 KR KR1020137020081A patent/KR101528089B1/ko active IP Right Grant
- 2004-06-11 KR KR1020057023920A patent/KR101242815B1/ko active IP Right Grant
-
2005
- 2005-12-09 US US11/297,324 patent/US7483119B2/en not_active Expired - Fee Related
-
2006
- 2006-06-08 US US11/448,927 patent/US20060227312A1/en not_active Abandoned
-
2008
- 2008-01-10 US US12/007,450 patent/US8040491B2/en not_active Expired - Fee Related
- 2008-09-10 US US12/232,063 patent/US8208117B2/en not_active Expired - Fee Related
- 2008-09-10 US US12/232,064 patent/US8384880B2/en not_active Expired - Fee Related
-
2009
- 2009-10-05 JP JP2009231860A patent/JP5152143B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-03 JP JP2010022454A patent/JP5152215B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012083220A patent/JP5699979B2/ja not_active Expired - Fee Related
- 2012-09-03 JP JP2012193620A patent/JP5692189B2/ja not_active Expired - Fee Related
- 2012-09-03 JP JP2012193619A patent/JP5692188B2/ja not_active Expired - Fee Related
-
2013
- 2013-01-30 US US13/753,969 patent/US9019467B2/en not_active Expired - Lifetime
- 2013-01-30 US US13/754,112 patent/US9268237B2/en not_active Expired - Fee Related
-
2014
- 2014-03-07 JP JP2014044468A patent/JP5817869B2/ja not_active Expired - Fee Related
- 2014-10-14 HK HK14110233.0A patent/HK1196900A1/xx not_active IP Right Cessation
-
2015
- 2015-03-30 JP JP2015070170A patent/JP6172196B2/ja not_active Expired - Fee Related
- 2015-04-27 US US14/696,898 patent/US9846371B2/en not_active Expired - Fee Related
-
2016
- 2016-03-07 JP JP2016043921A patent/JP6256498B2/ja not_active Expired - Fee Related
- 2016-03-08 HK HK16102657.2A patent/HK1214680A1/zh not_active IP Right Cessation
-
2017
- 2017-05-31 JP JP2017107690A patent/JP6477785B2/ja not_active Expired - Fee Related
- 2017-07-31 US US15/664,319 patent/US20170329234A1/en not_active Abandoned
-
2018
- 2018-09-28 JP JP2018183797A patent/JP2019003218A/ja not_active Withdrawn
-
2019
- 2019-01-18 HK HK19100965.0A patent/HK1258606A1/zh unknown
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JPH0778750A (ja) * | 1993-09-06 | 1995-03-20 | Tokyo Electron Ltd | 処理装置 |
JPH07220990A (ja) * | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08279549A (ja) * | 1995-04-07 | 1996-10-22 | Nippon Telegr & Teleph Corp <Ntt> | 真空吸着装置 |
JPH10255319A (ja) * | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH11163103A (ja) * | 1997-11-25 | 1999-06-18 | Hitachi Ltd | 半導体装置の製造方法および製造装置 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
JP2000058436A (ja) * | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2013016839A (ja) * | 2003-06-13 | 2013-01-24 | Nikon Corp | 基板ステージ、露光装置、及びデバイス製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013016839A (ja) * | 2003-06-13 | 2013-01-24 | Nikon Corp | 基板ステージ、露光装置、及びデバイス製造方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6477785B2 (ja) | 露光装置、及びデバイス製造方法 | |
JP4513534B2 (ja) | 露光装置及び露光方法、デバイス製造方法 | |
JP5445612B2 (ja) | 露光装置及び露光方法、デバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121003 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20130918 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20131003 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140307 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A132 Effective date: 20140617 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150119 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5692189 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |