JP5692189B2 - 基板ステージ、露光装置、及びデバイス製造方法 - Google Patents
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Description
本発明は、投影光学系と液体とを介してパターンの像を基板に露光する露光方法、基板を支持する基板ステージ、露光装置、及びデバイス製造方法に関するものである。
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
露光装置EXとしては、マスクMと基板Pとを同期移動してマスクMのパターンを走査露光するステップ・アンド・スキャン方式の走査型露光装置(スキャニングステッパ)の他に、マスクMと基板Pとを静止した状態でマスクMのパターンを一括露光し、基板Pを順次ステップ移動させるステップ・アンド・リピート方式の投影露光装置(ステッパ)にも適用することができる。また、本発明は基板P上で少なくとも2つのパターンを部分的に重ねて転写するステップ・アンド・スティッチ方式の露光装置にも適用できる。
Claims (21)
- 投影光学系からの光により液体を介して基板を露光する露光装置であって、
前記投影光学系に対して移動可能なステージと、
前記ステージ上に設けられ、前記基板を保持する基板ホルダと、を備え、
前記ステージは、
前記基板ホルダが配置される凹部と、
前記凹部内の空間のうち前記基板ホルダより外側の空間に流入した液体を排出可能なように該外側の空間に接続された第1流路と、
を含むことを特徴とする露光装置。 - 請求項1に記載の露光装置において、
前記基板ホルダは、
前記基板の裏面を支持する支持部と、
前記支持部の周囲に配置され、前記支持部に支持された前記基板の裏面に対向する周壁部と、
前記支持部が設けられた前記周壁部より内側の空間のガスを吸引可能なように該内側の空間に接続された第2流路と、
を含むことを特徴とする露光装置。 - 請求項2に記載の露光装置において、
前記基板ホルダは、前記支持部および前記周壁部が上部に形成されたベース部と、
前記ベース部の表面のうち前記内側の空間に面した表面に形成された吸引口と、を含み、
前記第2流路は、前記吸引口に接続されていることを特徴とする露光装置。 - 請求項2または3に記載の露光装置において、
前記基板ホルダは、前記支持部が設けられた前記内側の空間のガスが前記第2流路を介して吸引されて該内側の空間が負圧にされることによって前記基板を保持することを特徴とする露光装置。 - 請求項2〜4のいずれか一項に記載の露光装置において、
前記第1流路は、前記外側の空間のうち前記周壁部と前記凹部の内側面との間の空間に接続されていることを特徴とする露光装置。 - 請求項2〜5のいずれか一項に記載の露光装置において、
前記周壁部の上面の高さは、前記支持部の上面の高さよりも低いことを特徴とする露光装置。 - 請求項2〜6のいずれか一項に記載の露光装置において、
前記周壁部は、第1周壁と、該第1周壁より内側に配置された第2周壁と、を含み、
前記ステージは、前記第1周壁と前記第2周壁との中間の空間に接続された第3流路を含むことを特徴とする露光装置。 - 請求項7に記載の露光装置において、
前記中間の空間は、前記第3流路を介して圧力が調整されることを特徴とする露光装置。 - 請求項7または8に記載の露光装置において、
前記中間の空間は、前記第3流路を介して負圧にされることを特徴とする露光装置。 - 請求項7または8に記載の露光装置において、
前記中間の空間は、前記第3流路を介して陽圧にされることを特徴とする露光装置。 - 請求項1〜10のいずれか一項に記載の露光装置において、
前記基板ホルダは、前記凹部の周囲のステージ上面と前記基板の表面とが実質的に同じ高さになるように前記基板を保持することを特徴とする露光装置。 - 請求項1〜11のいずれか一項に記載の露光装置において、
前記ステージ上面は平坦面を含むことを特徴とする露光装置。 - 投影光学系からの光により液体を介して基板を露光する露光方法であって、
前記投影光学系に対して移動可能なステージのうち該ステージに形成された凹部内に設けられた基板ホルダによって前記基板を保持することと、
前記凹部内の空間のうち前記基板ホルダより外側の空間に流入した液体を、該外側の空間に接続された第1流路を介して排出することと、
を含むことを特徴とする露光方法。 - 請求項13に記載の露光方法において、
前記基板ホルダが備える支持部により前記基板の裏面を支持することと、
前記支持部に支持された前記基板の裏面に対向するように前記支持部の周囲に配置された周壁部より内側の空間のガスを、該内側の空間に接続された第2流路を介して吸引することと、を含み、
前記基板は、前記内側の空間のガスが前記第2流路を介して吸引されて該内側の空間が負圧にされることによって前記基板ホルダに保持されることを特徴とする露光方法。 - 請求項14に記載の露光方法において、
前記外側の空間のうち前記凹部の内側面と前記周壁部との間の空間に流入した液体を、前記第1流路を介して排出することを含むことを特徴とする露光方法。 - 請求項14または15に記載の露光方法において、
前記周壁部のうちの第1周壁と該第1周壁より内側に配置された第2周壁との中間の空間の圧力を、該中間の空間に接続された第3流路を介して調整することを含むことを特徴とする露光方法。 - 請求項16に記載の露光方法において、
前記中間の空間を負圧にすることを含むことを特徴とする露光方法。 - 請求項16に記載の露光方法において、
前記中間の空間を陽圧にすることを含むことを特徴とする露光方法。 - 請求項13〜18のいずれか一項に記載の露光方法において、
前記凹部の周囲のステージ上面と前記基板の表面とが実質的に同じ高さになるように前記基板を前記基板ホルダにより保持することを含むことを特徴とする露光方法。 - 請求項1〜12のいずれか一項に記載の露光装置を用いて基板を露光することと、
前記露光装置を用いて露光された前記基板上にデバイスを組み立てることと、
を含むデバイス製造方法。 - 請求項13〜19のいずれか一項に記載の露光方法を用いて基板を露光することと、
前記露光方法を用いて露光された前記基板上にデバイスを組み立てることと、
を含むデバイス製造方法。
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JP2014044468A Expired - Fee Related JP5817869B2 (ja) | 2003-06-13 | 2014-03-07 | 露光装置、露光方法、及びデバイス製造方法 |
JP2015070170A Expired - Fee Related JP6172196B2 (ja) | 2003-06-13 | 2015-03-30 | 基板ステージ |
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JP2012083220A Expired - Fee Related JP5699979B2 (ja) | 2003-06-13 | 2012-03-30 | 露光装置、デバイス製造方法、及び露光方法 |
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JP2015070170A Expired - Fee Related JP6172196B2 (ja) | 2003-06-13 | 2015-03-30 | 基板ステージ |
JP2016043921A Expired - Fee Related JP6256498B2 (ja) | 2003-06-13 | 2016-03-07 | 基板ステージ |
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