SG109609A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method

Info

Publication number
SG109609A1
SG109609A1 SG200405049A SG200405049A SG109609A1 SG 109609 A1 SG109609 A1 SG 109609A1 SG 200405049 A SG200405049 A SG 200405049A SG 200405049 A SG200405049 A SG 200405049A SG 109609 A1 SG109609 A1 SG 109609A1
Authority
SG
Singapore
Prior art keywords
manufacturing method
lithographic apparatus
device manufacturing
lithographic
apparatus
Prior art date
Application number
SG200405049A
Inventor
Marcel Mathijs Theodo Dierichs
Sjoerd Nicolaas Lamber Donders
Johannes Henricus Wilhe Jacobs
Hans Jansen
Erik Roelof Loopstra
Jeroen Johannes Sophia Mertens
Marco Koert Stavenga
Bob Streefkerk
Martinus Cornelis Mar Verhagen
Lejla Seuntiens-Gruda
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP03255376 priority Critical
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG109609A1 publication Critical patent/SG109609A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D19/00Degasification of liquids
    • B01D19/0031Degasification of liquids by filtration
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D61/00Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis, ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/02Reverse osmosis; Hyperfiltration ; Nanofiltration
    • B01D61/025Reverse osmosis; Hyperfiltration
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D61/00Processes of separation using semi-permeable membranes, e.g. dialysis, osmosis, ultrafiltration; Apparatus, accessories or auxiliary operations specially adapted therefor
    • B01D61/24Dialysis ; Membrane extraction
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/20Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/02Treatment of water, waste water, or sewage by heating
    • C02F1/04Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/28Treatment of water, waste water, or sewage by sorption
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/28Treatment of water, waste water, or sewage by sorption
    • C02F1/283Treatment of water, waste water, or sewage by sorption using coal, charred products, or inorganic mixtures containing them
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/30Treatment of water, waste water, or sewage by irradiation
    • C02F1/32Treatment of water, waste water, or sewage by irradiation with ultra-violet light
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/42Treatment of water, waste water, or sewage by ion-exchange
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/44Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/441Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by reverse osmosis
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/40Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
SG200405049A 2003-08-29 2004-08-23 Lithographic apparatus and device manufacturing method SG109609A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP03255376 2003-08-29

Publications (1)

Publication Number Publication Date
SG109609A1 true SG109609A1 (en) 2005-03-30

Family

ID=34400571

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200405049A SG109609A1 (en) 2003-08-29 2004-08-23 Lithographic apparatus and device manufacturing method

Country Status (8)

Country Link
US (6) US7733459B2 (en)
EP (3) EP2284613B1 (en)
JP (5) JP2005079584A (en)
KR (1) KR100659257B1 (en)
CN (2) CN101872130B (en)
DE (1) DE602004029970D1 (en)
SG (1) SG109609A1 (en)
TW (1) TWI245163B (en)

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261775A1 (en) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Device for optical measurement of an imaging system
KR101532824B1 (en) 2003-04-09 2015-07-01 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
EP1616220B1 (en) * 2003-04-11 2013-05-01 Nikon Corporation Apparatus and method for maintaining immersion fluid under a lithographic projection lens
KR101597475B1 (en) 2003-04-11 2016-02-24 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
TWI474380B (en) * 2003-05-23 2015-02-21 尼康股份有限公司
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101528016B1 (en) 2003-06-13 2015-06-12 가부시키가이샤 니콘 Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101146962B1 (en) 2003-06-19 2012-05-22 가부시키가이샤 니콘 Exposure device and device producing method
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (en) 2003-06-27 2007-08-09 Asml Netherlands B.V. A lithographic apparatus and method for producing an article
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4325622B2 (en) * 2003-08-29 2009-09-02 株式会社ニコン Exposure apparatus and device manufacturing method
WO2005029559A1 (en) * 2003-09-19 2005-03-31 Nikon Corporation Exposure apparatus and device producing method
EP2312395B1 (en) 2003-09-29 2015-05-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
KR101111364B1 (en) 2003-10-08 2012-02-27 가부시키가이샤 니콘 Substrate carrying apparatus, substrate carrying method, exposure apparatus, exposure method, and method for producing device
WO2005036623A1 (en) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. Substrate transporting apparatus and method, exposure apparatus and method, and device producing method
JP2005136364A (en) * 2003-10-08 2005-05-26 Nikon Corp Substrate carrying device, exposure device and device manufacturing method
TW201738932A (en) 2003-10-09 2017-11-01 Nippon Kogaku Kk Exposure apparatus, exposure method, and device producing method
KR20140049044A (en) * 2003-10-22 2014-04-24 가부시키가이샤 니콘 Exposure apparatus, exposure method, and method for manufacturing device
TWI569308B (en) 2003-10-28 2017-02-01 尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI519819B (en) 2003-11-20 2016-02-01 尼康股份有限公司 Light beam converter, optical illuminating apparatus, exposure device, and exposure method
EP3139214B1 (en) * 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JPWO2005057635A1 (en) * 2003-12-15 2007-07-05 株式会社ニコン Projection exposure apparatus and the stage apparatus, and exposure method
KR101499405B1 (en) 2003-12-15 2015-03-05 가부시키가이샤 니콘 Stage system, exposure apparatus and exposure method
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
JP4323946B2 (en) * 2003-12-19 2009-09-02 キヤノン株式会社 Exposure apparatus
WO2005071717A1 (en) * 2004-01-26 2005-08-04 Nikon Corporation Exposure apparatus and device producing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7990516B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
TWI505329B (en) 2004-02-06 2015-10-21 尼康股份有限公司 Optical illumination apparatus, light-exposure apparatus, light-exposure method and device manufacturing method
JP3981368B2 (en) * 2004-05-17 2007-09-26 松下電器産業株式会社 The pattern forming method
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
EP3203498A1 (en) * 2004-06-09 2017-08-09 Nikon Corporation Exposure apparatus and device manufacturing method
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US7804576B2 (en) * 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
JP4752473B2 (en) * 2004-12-09 2011-08-17 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
JPWO2006080250A1 (en) * 2005-01-25 2008-08-07 Jsr株式会社 Immersion exposure system, a recycling method of immersion exposure liquid and supply method
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7428038B2 (en) * 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
JP4072543B2 (en) * 2005-03-18 2008-04-09 キヤノン株式会社 Immersion exposure apparatus and device manufacturing method
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US7315033B1 (en) * 2005-05-04 2008-01-01 Advanced Micro Devices, Inc. Method and apparatus for reducing biological contamination in an immersion lithography system
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
KR20080007383A (en) * 2005-05-24 2008-01-18 가부시키가이샤 니콘 Exposure method, exposure apparatus and device manufacturing method
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
WO2007023813A1 (en) * 2005-08-23 2007-03-01 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20070058263A1 (en) * 2005-09-13 2007-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for immersion lithography
US7420188B2 (en) * 2005-10-14 2008-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure method and apparatus for immersion lithography
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP2009516927A (en) * 2005-11-23 2009-04-23 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company Apparatus for recycling alkane immersion liquid, and using
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR20080071552A (en) 2005-12-06 2008-08-04 가부시키가이샤 니콘 Exposure method, exposure apparatus, and method for manufacturing device
WO2007072818A1 (en) * 2005-12-19 2007-06-28 Nikon Corporation Liquid producing apparatus, liquid immersion exposure apparatus, and method for manufacturing device
KR100870791B1 (en) 2006-02-15 2008-11-27 캐논 가부시끼가이샤 Exposure apparatus, exposure method, and exposure system
JP2007242774A (en) * 2006-03-07 2007-09-20 Canon Inc Exposure equipment and method therefor, and device manufacturing method
CN100590173C (en) * 2006-03-24 2010-02-17 北京有色金属研究总院;有研稀土新材料股份有限公司 Fluorescent powder and manufacturing method and electric light source produced thereby
JP2007286162A (en) * 2006-04-13 2007-11-01 Nikon Corp Immersion microscopic device
KR20090034344A (en) * 2006-07-21 2009-04-07 엔테그리스, 아이엔씨. Apparatus and method for conditioning an immersion fluid
US7826030B2 (en) 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080198347A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Immersion exposure apparatus and method of manufacturing device
JP2010519722A (en) * 2007-02-23 2010-06-03 株式会社ニコン Exposure method, an exposure apparatus, device manufacturing method, and immersion exposure substrate
US9025126B2 (en) * 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
KR101423611B1 (en) * 2008-01-16 2014-07-30 삼성전자주식회사 Substrate treating apparatus, exposing apparatus, and cleaning method of cleaning tool
US8629970B2 (en) * 2008-01-23 2014-01-14 Asml Netherlands B.V. Immersion lithographic apparatus with immersion fluid re-circulating system
JP2009218344A (en) * 2008-03-10 2009-09-24 Canon Inc Exposing apparatus and exposing method
NL1036766A1 (en) * 2008-04-25 2009-10-27 Asml Netherlands Bv Methods Relating to immersion lithography and an immersion lithographic apparatus.
EP2128703A1 (en) * 2008-05-28 2009-12-02 ASML Netherlands BV Lithographic Apparatus and a Method of Operating the Apparatus
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005207A (en) 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
CA2856196A1 (en) 2011-12-06 2013-06-13 Masco Corporation Of Indiana Ozone distribution in a faucet
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
KR20140113844A (en) * 2013-03-15 2014-09-25 삼성전자주식회사 particle counter and immersion scanner used the same
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
DE102014004511A1 (en) * 2014-03-28 2015-10-01 Carl Zeiss Microscopy Gmbh A method for terminating microscopic applications with an immersion objective
CN106164777B (en) * 2014-04-14 2019-06-18 Asml荷兰有限公司 The Optimizing Flow of photoetching process
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
DE102015218053A1 (en) * 2015-09-21 2017-03-23 Eta Plus Electronic Gmbh Device for UV irradiation of a flowing medium
US20170087585A1 (en) * 2015-09-24 2017-03-30 Suss Microtec Photomask Equipment Gmbh & Co. Kg Method for treating substrates with an aqueous liquid medium exposed to uv-radiation

Family Cites Families (228)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (en)
DE206607C (en)
DE224448C (en)
DE242880C (en)
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (en) 1980-01-24 1987-02-20 Dme Process for photomicrolithography has high resolution traits
JPS6346973B2 (en) 1980-09-19 1988-09-20 Hitachi Ltd
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS6349893B2 (en) * 1981-03-18 1988-10-06 Hitachi Ltd
JPS58202448A (en) 1982-05-21 1983-11-25 Hitachi Ltd Exposing device
JPH0747157B2 (en) 1985-02-15 1995-05-24 株式会社日立製作所 Ultra-pure water production system
JPS61187984U (en) 1985-05-15 1986-11-22
JPS6265326A (en) 1985-09-18 1987-03-24 Hitachi Ltd Exposure device
JPS6265326U (en) 1985-10-16 1987-04-23
JPS62121417A (en) 1985-11-22 1987-06-02 Hitachi Ltd Liquid-immersion objective lens device
JPS62121417U (en) 1986-01-24 1987-08-01
JPS63108724A (en) * 1986-10-27 1988-05-13 Japan Organo Co Ltd Manufacture of semiconductor cleaning superpure water
JPS63157419A (en) 1986-12-22 1988-06-30 Toshiba Corp Fine pattern transfer apparatus
JPH0517223Y2 (en) 1987-01-05 1993-05-10
JPS63157419U (en) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH03209479A (en) 1989-09-06 1991-09-12 Sanee Giken Kk Exposure method
JP2938568B2 (en) 1990-05-02 1999-08-23 フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン Lighting device
US5425227A (en) 1990-06-29 1995-06-20 Zinser Textilmaschinen Gmbh Protecting a textile process liquid before application to a filament
US5053060A (en) * 1990-06-29 1991-10-01 Molecular Devices Corporation Device and method for degassing, gassing and debubbling liquids
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305915A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH04305917A (en) 1991-04-02 1992-10-28 Nikon Corp Adhesion type exposure device
JPH05136114A (en) * 1991-11-08 1993-06-01 Tadahiro Omi Ultrapure water supplying device, substrate washing method, and device and method for manufacturing ultrapure water
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
JPH06124873A (en) * 1992-10-09 1994-05-06 Canon Inc Liquid-soaking type projection exposure apparatus
JP2753930B2 (en) 1992-11-27 1998-05-20 キヤノン株式会社 Immersion-type projection exposure apparatus
JP2520833B2 (en) 1992-12-21 1996-07-31 東京エレクトロン株式会社 Immersion of the liquid processing apparatus
JP2783376B2 (en) * 1993-03-15 1998-08-06 株式会社日立サイエンスシステムズ Automated chemical analysis apparatus
JP3390203B2 (en) * 1993-03-23 2003-03-24 株式会社日本フォトサイエンス Light recovery blocking techniques of bacteria of UV sterilization solution
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JPH08316124A (en) 1995-05-19 1996-11-29 Hitachi Ltd Method and apparatus for projection exposing
JP3426072B2 (en) 1996-01-17 2003-07-14 オルガノ株式会社 Ultra-pure water production system
JP4075966B2 (en) 1996-03-06 2008-04-16 エーエスエムエル ネザーランズ ビー.ブイ. Differential interferometer system and lithographic step-and-scan device with this system
US6104687A (en) 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
DE69717975T2 (en) 1996-12-24 2003-05-28 Asml Netherlands Bv In two directions balanced positioning device and lithographic device with such a positioning device
EP0956516B1 (en) 1997-01-29 2002-04-10 Micronic Laser Systems Ab Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate
JP3612920B2 (en) 1997-02-14 2005-01-26 ソニー株式会社 Master fabrication exposure apparatus of an optical recording medium
SE509062C2 (en) 1997-02-28 1998-11-30 Micronic Laser Systems Ab The data conversion method for a laser printer with multiple beams of very complex patterns mikrokolitografiska
JP3626504B2 (en) 1997-03-10 2005-03-09 アーエスエム リソグラフィ ベスローテン フェンノートシャップ Positioning device having two object holder
JPH10255319A (en) 1997-03-12 1998-09-25 Hitachi Maxell Ltd Master disk exposure device and method therefor
JP3747566B2 (en) 1997-04-23 2006-02-22 株式会社ニコン The liquid immersion type exposure apparatus
JP3817836B2 (en) 1997-06-10 2006-09-06 株式会社ニコン An exposure apparatus and a manufacturing method and an exposure method and device manufacturing method thereof
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US5938922A (en) 1997-08-19 1999-08-17 Celgard Llc Contactor for degassing liquids
WO1999027568A1 (en) 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (en) 1997-12-11 1999-07-02 Nikon Corp Projection aligner
WO1999031717A1 (en) 1997-12-12 1999-06-24 Nikon Corporation Projection exposure method and projection aligner
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US5997745A (en) * 1998-04-08 1999-12-07 Zenon Environmental Inc. Method for producing high purity water using triple pass reverse osmosis (TPRO)
JP2000051865A (en) * 1998-08-06 2000-02-22 Kurita Water Ind Ltd Electric regeneration type desalting apparatus
JP2000058436A (en) 1998-08-11 2000-02-25 Nikon Corp Projection aligner and exposure method
JP2000087579A (en) * 1998-09-11 2000-03-28 Toshiba Corp Multi-purpose use plant for deep layer water in ocean
JP2000266763A (en) * 1999-03-18 2000-09-29 Hitachi Ltd Automatic analyzer
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP4504479B2 (en) 1999-09-21 2010-07-14 オリンパス株式会社 Microscope for immersion objective lens
JP2001153855A (en) * 1999-11-29 2001-06-08 Japan Organo Co Ltd Analytic method and system for impurity concentration
TW546551B (en) 1999-12-21 2003-08-11 Asml Netherlands Bv Balanced positioning system for use in lithographic apparatus
CA2397580C (en) * 2000-01-18 2007-06-12 Asahi Kasei Kabushiki Kaisha A method for membrane filtration purification of suspended water
JP2001272604A (en) 2000-03-27 2001-10-05 Olympus Optical Co Ltd Immersion objective lens and optical device using the same
JP3895540B2 (en) * 2000-06-21 2007-03-22 三徳化学工業株式会社 Method for producing purified hydrogen peroxide solution
JP2004123762A (en) 2000-06-30 2004-04-22 Nippon Zeon Co Ltd Detergent and deterging method
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
JP4447126B2 (en) * 2000-07-10 2010-04-07 野村マイクロ・サイエンス株式会社 Ultra-pure water production system
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
US6423223B1 (en) * 2000-08-31 2002-07-23 Donald A. Northcut Multi-element, reverse osmosis, liquid filter system with flushing and filtering circuits
CN1183993C (en) * 2000-09-13 2005-01-12 迈克里斯公司 Liquid filtration device and method thereof
CN1423147A (en) 2001-12-05 2003-06-11 株式会社尼康 Projection optical system and exposure device with same
KR100866818B1 (en) 2000-12-11 2008-11-04 가부시키가이샤 니콘 Projection optical system and exposure apparatus comprising the same
JP2002273442A (en) * 2001-03-23 2002-09-24 Kurita Water Ind Ltd Pure water manufacturing apparatus and pure water manufacturing method
US6620743B2 (en) * 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
JP2002355683A (en) * 2001-05-29 2002-12-10 Kurita Water Ind Ltd Ultrapure water making method and apparatus
CN1224050C (en) * 2001-06-20 2005-10-19 松下电器产业株式会社 Cleaning method for magnetic transfer carrier and pseudo carrier
EP2017675A1 (en) * 2001-07-09 2009-01-21 Canon Kabushiki Kaisha Exposure apparatus
US6607668B2 (en) * 2001-08-17 2003-08-19 Technology Ventures, Inc. Water purifier
JP4661009B2 (en) * 2001-09-04 2011-03-30 栗田工業株式会社 Ultra-pure water production system
AT410406B (en) 2001-09-17 2003-04-25 Andritz Ag Maschf Method and apparatus for aerating a liquid with gas
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
JP3849766B2 (en) * 2001-10-26 2006-11-22 栗田工業株式会社 Processing apparatus and processing method of the organic substance-containing water
JP3878452B2 (en) * 2001-10-31 2007-02-07 株式会社ルネサステクノロジ The method of manufacturing a semiconductor integrated circuit device
WO2003040830A2 (en) 2001-11-07 2003-05-15 Applied Materials, Inc. Optical spot grid array printer
JP2003145146A (en) * 2001-11-12 2003-05-20 Hitachi Ltd Method for producing ultrapure water and apparatus therefor
JP4159823B2 (en) * 2001-12-11 2008-10-01 野村マイクロ・サイエンス株式会社 Ultrapure water production method
JP3572357B2 (en) 2001-12-17 2004-09-29 防衛庁技術研究本部長 Hanger assembly
DE10210899A1 (en) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection objective for immersion lithography
DE10229818A1 (en) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag A method for focus detection and imaging system with a focus detection system
KR20050035890A (en) 2002-08-23 2005-04-19 가부시키가이샤 니콘 Projection optical system and method for photolithography and exposure apparatus and method using same
US6858145B2 (en) * 2002-09-12 2005-02-22 Chemitreat Pte Ltd Method of removing organic impurities from water
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
DE60335595D1 (en) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographic apparatus with immersion and method for manufacturing a device
CN100568101C (en) 2002-11-12 2009-12-09 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101349876B (en) 2002-11-12 2010-12-01 Asml荷兰有限公司 Immersion lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100585476B1 (en) * 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121829A1 (en) 2002-11-29 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
AU2003284672A1 (en) 2002-12-03 2004-06-23 Nikon Corporation Contaminant removing method and device, and exposure method and apparatus
DE10258718A1 (en) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projection objective, in particular for microlithography, and methods for tuning of a projection lens
JP4352874B2 (en) 2002-12-10 2009-10-28 株式会社ニコン Exposure apparatus and device manufacturing method
WO2004053957A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
JP4232449B2 (en) 2002-12-10 2009-03-04 株式会社ニコン Exposure method, an exposure apparatus, and device manufacturing method
WO2004053955A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
KR101036114B1 (en) 2002-12-10 2011-05-23 가부시키가이샤 니콘 Exposure apparatus, exposure method and method for manufacturing device
SG158745A1 (en) 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
KR101085372B1 (en) 2002-12-10 2011-11-21 가부시키가이샤 니콘 Exposure apparatus and method for manufacturing device
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
SG152063A1 (en) * 2002-12-10 2009-05-29 Nikon Corp Exposure apparatus and method for producing device
DE10257766A1 (en) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag A method for setting a desired optical characteristic of a projection lens and microlithographic projection exposure apparatus
JP4608876B2 (en) * 2002-12-10 2011-01-12 株式会社ニコン Exposure apparatus and device manufacturing method
AU2003289007A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Optical device and projection exposure apparatus using such optical device
AU2003289237A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
CN100370533C (en) 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 Liquid removal in a method and device for irradiating spots on a layer
GB0229345D0 (en) 2002-12-17 2003-01-22 Safe T Ltd Hollow needle applicators
JP4364806B2 (en) 2002-12-19 2009-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method and apparatus for irradiating a spot on the layer
AT365962T (en) 2002-12-19 2007-07-15 Koninkl Philips Electronics Nv Method and device for irradiating a layer by means of a light spot
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
CN104678715B (en) * 2003-02-26 2017-05-17 株式会社尼康 Exposure method, and device manufacturing method
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) * 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
EP1612850B1 (en) * 2003-04-07 2009-03-25 Nikon Corporation Exposure apparatus and method for manufacturing a device
EP3232271A1 (en) 2003-04-10 2017-10-18 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
KR20170064003A (en) 2003-04-10 2017-06-08 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
KR101597475B1 (en) 2003-04-11 2016-02-24 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
JP2004327638A (en) 2003-04-24 2004-11-18 Matsushita Electric Ind Co Ltd Thin film coating device
JP2004327747A (en) 2003-04-25 2004-11-18 Matsushita Electric Ind Co Ltd Chemical application device
JP4025683B2 (en) 2003-05-09 2007-12-26 松下電器産業株式会社 The pattern forming method and an exposure apparatus
US7485671B2 (en) * 2003-05-16 2009-02-03 Velocys, Inc. Process for forming an emulsion using microchannel process technology
JP5058550B2 (en) 2003-05-23 2012-10-24 株式会社ニコン Exposure apparatus, exposure method, a device manufacturing method, and the liquid recovery method
JP2004356205A (en) * 2003-05-27 2004-12-16 Tadahiro Omi Scanning exposure system and method for exposure
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4343597B2 (en) 2003-06-25 2009-10-14 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP3862678B2 (en) * 2003-06-27 2006-12-27 キヤノン株式会社 Exposure apparatus and device manufacturing method
EP2264532B1 (en) 2003-07-09 2012-10-31 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005015315A2 (en) * 2003-07-24 2005-02-17 Carl Zeiss Smt Ag Microlithographic projection exposure system, and method for introducing an immersion liquid into an immersion chamber
CN102323724B (en) 2003-07-28 2014-08-13 株式会社尼康 Liquid immersion exposure apparatus, producing method thereof, exposure apparatus and device producing method
JP4492239B2 (en) * 2003-07-28 2010-06-30 株式会社ニコン Exposure apparatus and device manufacturing method, and a control method for an exposure apparatus
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (en) 2003-08-27 2005-03-17 Sony Corp Aligner and manufacturing method of semiconductor device
JP4168880B2 (en) * 2003-08-29 2008-10-22 株式会社ニコン Immersion solution
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
KR101477850B1 (en) * 2003-08-29 2014-12-30 가부시키가이샤 니콘 Liquid recovery apparatus, exposure apparatus, exposure method, and device production method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4305095B2 (en) 2003-08-29 2009-07-29 株式会社ニコン Immersion projection exposure apparatus and the immersion optics cleaning method equipped with cleaning mechanism of the optical components
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1517184A1 (en) 2003-09-18 2005-03-23 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3007207B1 (en) 2003-09-26 2017-03-08 Nikon Corporation A projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method
TWI311691B (en) 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
SG112033A1 (en) 2003-11-07 2005-06-29 Asml Netherlands Bv Radiation detector
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
KR101163095B1 (en) 2003-12-23 2012-07-06 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Removable pellicle for immersion lithography
US7145641B2 (en) 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2005209705A (en) 2004-01-20 2005-08-04 Nikon Corp Exposure device and manufacturing method for device
KR101135232B1 (en) 2004-01-20 2012-04-12 칼 짜이스 에스엠테 게엠베하 Microlithographic projection exposure apparatus
US7990516B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076323A1 (en) 2004-02-10 2005-08-18 Nikon Corporation Aligner, device manufacturing method, maintenance method and aligning method
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
JP2005236047A (en) 2004-02-19 2005-09-02 Canon Inc Exposure system and method therefor
US7402377B2 (en) 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
US7465667B2 (en) 2004-03-08 2008-12-16 E.I. Du Pont De Nemours And Company Highly purified liquid perfluoro-n-alkanes and method for preparing
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3969457B2 (en) 2004-05-21 2007-09-05 Jsr株式会社 Immersion exposure liquid and the liquid immersion exposure method
EP1751624A1 (en) 2004-06-01 2007-02-14 E.I. Dupont De Nemours And Company Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications
US7224456B1 (en) 2004-06-02 2007-05-29 Advanced Micro Devices, Inc. In-situ defect monitor and control system for immersion medium in immersion lithography
JP4655763B2 (en) 2004-06-04 2011-03-23 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
EP3203498A1 (en) 2004-06-09 2017-08-09 Nikon Corporation Exposure apparatus and device manufacturing method
JP2005353763A (en) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd Exposure device and pattern forming method
JP2006024882A (en) 2004-06-11 2006-01-26 Matsushita Electric Ind Co Ltd Apparatus and method for thin-film application, and apparatus and method for exposing liquid immersion
JP4677833B2 (en) 2004-06-21 2011-04-27 株式会社ニコン The method of cleaning an exposure apparatus, and its members, the maintenance method for an exposure apparatus, maintenance equipment, and device manufacturing method
US7158208B2 (en) 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4740666B2 (en) 2004-07-07 2011-08-03 富士フイルム株式会社 The positive resist composition and pattern forming method using the same
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006024692A (en) 2004-07-07 2006-01-26 Toshiba Corp Forming method of resist pattern
US7050147B2 (en) 2004-07-08 2006-05-23 Asml Netherlands B.V. Method of adjusting a height of protrusions on a support surface of a support table, a lithographic projection apparatus, and a support table for supporting an article in a lithographic apparatus
US7259827B2 (en) 2004-07-14 2007-08-21 Asml Netherlands B.V. Diffuser unit, lithographic apparatus, method for homogenizing a beam of radiation, a device manufacturing method and device manufactured thereby
US20060012788A1 (en) 2004-07-19 2006-01-19 Asml Netherlands B.V. Ellipsometer, measurement device and method, and lithographic apparatus and method
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP2006049757A (en) 2004-08-09 2006-02-16 Tokyo Electron Ltd Substrate processing method
JP4772306B2 (en) 2004-09-06 2011-09-14 株式会社東芝 Immersion optical device and a cleaning method
WO2006029824A2 (en) 2004-09-16 2006-03-23 Carl Zeiss Smt Ag Monitoring element for lithographic projection systems
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
KR101285951B1 (en) 2004-10-26 2013-07-12 가부시키가이샤 니콘 Substrate processing method, exposure apparatus and method for manufacturing device
US7156925B1 (en) 2004-11-01 2007-01-02 Advanced Micro Devices, Inc. Using supercritical fluids to clean lenses and monitor defects
EP1816671A4 (en) 2004-11-11 2010-01-13 Nikon Corp Exposure method, device manufacturing method, and substrate
US7362412B2 (en) 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
JP4487907B2 (en) 2004-11-19 2010-06-23 株式会社ニコン Maintenance method, exposure method, an exposure apparatus and device manufacturing method
US7804576B2 (en) 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
JP4752473B2 (en) 2004-12-09 2011-08-17 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
JP4616884B2 (en) 2005-04-26 2011-01-19 三井化学株式会社 Immersion exposure liquid, the purification method and immersion exposure method immersion exposure liquid
US7078575B1 (en) 2005-06-09 2006-07-18 E. I. Du Pont De Nemours And Company Processes for preparing high purity polycyclic fluoroalkanes
JP2006352032A (en) 2005-06-20 2006-12-28 Jsr Corp Immersion exposure liquid and immersion exposure method
KR20080018158A (en) 2005-06-21 2008-02-27 가부시키가이샤 니콘 Exposure apparatus, exposure method, maintenance method and device manufacturing method
US7262422B2 (en) 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
DE102005040828A1 (en) 2005-08-25 2007-03-08 Carl Zeiss Jena Gmbh Method and device for immersion and for cleaning the front lens of microscope objectives
US7372058B2 (en) 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
JP5036996B2 (en) 2005-10-31 2012-09-26 東京応化工業株式会社 Washing liquid and cleaning method
JP2007123775A (en) 2005-10-31 2007-05-17 Tokyo Ohka Kogyo Co Ltd Cleaning liquid and cleaning method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US8629970B2 (en) * 2008-01-23 2014-01-14 Asml Netherlands B.V. Immersion lithographic apparatus with immersion fluid re-circulating system

Also Published As

Publication number Publication date
JP5008635B2 (en) 2012-08-22
US8629971B2 (en) 2014-01-14
EP2284613B1 (en) 2012-04-04
US20150205214A1 (en) 2015-07-23
CN1591192B (en) 2010-10-06
EP2256555A1 (en) 2010-12-01
EP1510872A2 (en) 2005-03-02
JP2011254092A (en) 2011-12-15
US20050078286A1 (en) 2005-04-14
JP2009055062A (en) 2009-03-12
EP1510872B1 (en) 2010-11-10
JP5008636B2 (en) 2012-08-22
JP2005079584A (en) 2005-03-24
JP2008135769A (en) 2008-06-12
US20120013870A1 (en) 2012-01-19
KR20050022317A (en) 2005-03-07
JP2009055061A (en) 2009-03-12
US20100265476A1 (en) 2010-10-21
EP2256555B1 (en) 2012-05-09
EP2284613A1 (en) 2011-02-16
US9581914B2 (en) 2017-02-28
US20170139333A1 (en) 2017-05-18
TW200510923A (en) 2005-03-16
DE602004029970D1 (en) 2010-12-23
CN101872130B (en) 2012-10-03
US20120013874A1 (en) 2012-01-19
TWI245163B (en) 2005-12-11
EP1510872A3 (en) 2005-05-25
KR100659257B1 (en) 2006-12-19
JP5008550B2 (en) 2012-08-22
US7733459B2 (en) 2010-06-08
US8953144B2 (en) 2015-02-10
CN1591192A (en) 2005-03-09
US9025127B2 (en) 2015-05-05
CN101872130A (en) 2010-10-27

Similar Documents

Publication Publication Date Title
EP2161619B8 (en) Cleanup method and immersion lithography apparatus
TWI382270B (en) Liquid immersion exposure apparatus and method and device manufacturing method
TWI612338B (en) Optical illuminating apparatus, exposure device, exposure method, and device manufacturing method
TWI297815B (en) Exposure apparatus and method
TWI294560B (en) Exposure apparatus and device fabrication method using the same
TWI351657B (en) Method and apparatus for scaling and quantizing so
TW575771B (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI307453B (en) Illumination apparatus, exposure apparatus and device manufacturing method
TWI359447B (en) Single mask via method and device
GB2398312B (en) Apparatus and method
TWI303355B (en) Lithographic apparatus, chuck system thereof and device manufacturing method
TWI341444B (en) Lithographic apparatus and device manufacturing method
TWI322336B (en) Lithographic apparatus and device manufacturing method
TWI396053B (en) Lithographic apparatus and device manufacturing method
HK1221289A1 (en) Exposure device and device manufacturing method
SG139762A1 (en) Lithographic apparatus and method for calibrating the same
AU2003289271A1 (en) Exposure apparatus, exposure method and method for manufacturing device
AU2003302831A1 (en) Exposure method, exposure apparatus and method for manufacturing device
EP1699233A4 (en) Image configuration device and image configuration method
TWI295408B (en) Lithographic apparatus and device manufacturing method, and measurement system
SG120958A1 (en) Inspection method and device manufacturing method
IL162696D0 (en) Apparatus and method for endoscopiccolectomy
EP1548559A4 (en) Inputting method and device
TWI338198B (en) Lithographic apparatus and device manufacturing method
AU2003253907A8 (en) Loadport apparatus and method for use thereof