TWI555079B - 用於矽膜的選擇性蝕刻 - Google Patents

用於矽膜的選擇性蝕刻 Download PDF

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TWI555079B
TWI555079B TW100116201A TW100116201A TWI555079B TW I555079 B TWI555079 B TW I555079B TW 100116201 A TW100116201 A TW 100116201A TW 100116201 A TW100116201 A TW 100116201A TW I555079 B TWI555079 B TW I555079B
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germanium
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張景春
王安川
茵可尼汀Ｋ
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應用材料股份有限公司
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Description

用於矽膜的選擇性蝕刻 相關申請案的交叉引用
本發明主張由Jingchun Zhang等人於2010年5月27日所申請的美國臨時專利申請案號第61/348920號(發明名稱為「Oxide Deselective Etch」)為優先權，該案全文為所有目的以引用的方式併入本文中。
本發明是有關於製造半導體元件的方法。
可藉由在基板表面上產生錯綜複雜的圖案化材料層的製程來製造積體電路。在基板上產生圖案化材料需要經控制的方法來移除曝露的材料層。化學蝕刻可用於各種用途，包含將光阻中的圖案轉移到下層、將多個層變薄或是將已存在在表面上的特徵的橫向尺度變薄。通常，期望擁有一種蝕刻方法可以蝕刻一種材料快於蝕刻另一種材料，而幫助例如，圖案轉移製程的進行。此蝕刻製程稱為對第一材料具選擇性。由於材料、電路以及製程的多樣性，已經開發對各種材料具選擇性的蝕刻製程。
SiconiTM蝕刻為遠端電漿輔助乾式蝕刻製程，涉及將基板同時曝露至氫氣(H2)、三氟化氮(NF3)以及氨氣(NH3) 的電漿副產物中。氫與氟物種的遠端電漿激發可允許無電漿損壞的基板處理。該SiconiTM蝕刻為較大程度共形且對於氧化矽層具有選擇性，但無法快速地蝕刻矽，無論矽是非晶矽、結晶矽還是多晶矽。選擇性對於例如淺溝槽絕緣(STI)應用以及層間介電質(ILD)凹陷形成應用提供了許多優點。該SiconiTM製程產生固體副產物，該固體副產物是隨著移除基板材料生長在基板表面上。當提高基板溫度時，該固體副產物隨後可藉由昇華而移除。
到目前為止，遠端電漿蝕刻(例如，SiconiTM)對於氧化矽的選擇性仍有限制。因此需要一種方法可以擴大遠端電漿蝕刻製程的可能選擇性範圍。
在此描述一種蝕刻圖案化異質含矽結構的方法，相較於現有遠端電漿蝕刻，該方法包含具有反向選擇性的遠端電漿蝕刻。可使用該方法共形修整多晶矽，同時移除少量氧化矽或不移除氧化矽。更具體地來說，包含較少氧的含矽膜層會比含有較多氧的含矽膜層更快速地被移除。其他示例性的應用包含修整氮碳化矽(silicon carbon nitride)膜時，實質保留碳氧化矽(silicon oxycarbide)。可利用本發明之方法以及嶄新的製程流程來實施此應用。期望此製程流程能夠適用於各種更細微的線寬結構。亦可使用在此所描述的方法，以比蝕刻具有較高濃度氮的含氮矽膜層更快的速度來蝕刻含矽膜層。
本發明實施例包含在基板處理腔室的基板處理區域中蝕刻圖案化基板的方法。該圖案化基板具有曝露的含氧矽區域以及曝露的含矽區域，該含矽區域包含比該含氧矽區域少量的氧。該方法包含：將含氟前驅物流入與基板處理區域流動耦接的遠端電漿區域中，並在第一電漿區域中形成電漿以產生電漿流出物。該方法更包含：藉由將電漿流出物流入基板處理區域中，並以比蝕刻含氧矽區域更快的速度來蝕刻含矽區域。
在接下來的實施方式中將說明一部分的額外實施例以及特徵，而在此技術領域中具有通常知識者可藉由審閱說明書來理解或是藉由實施本文所揭露的實施例來學習另一部分的額外實施例。藉由說明書所描述的手段、合併與方法可理解並獲得本文所揭露的實施例的特徵及優點。
在此描述一種蝕刻圖案化異質含矽結構的方法，相較於現有遠端電漿蝕刻，該方法包含具有反向選擇性的遠端電漿蝕刻。可使用該方法共形修整多晶矽，同時移除少量氧化矽或不移除氧化矽。更具體地來說，包含少量氧的含矽膜層會比含有較多氧的含矽膜層更快速地被移除。其他示例性的應用包含修整氮碳化矽(silicon carbon nitride)膜時，實質保留碳氧化矽(silicon oxycarbide)。可利用本發明之方法以及嶄新的製程流程來實施此應用。期望此製程流程能夠適用於各種更細微的線寬結構。亦可使用在此所描述的方法，以比蝕刻具有較高濃度氮的含氮矽膜層更快的速度來蝕刻含矽膜層。
SiconiTM蝕刻製程已使用氨氣(NH3)作為氫來源以及使用三氟化氮(NF3)作為氟來源，氨氣以及三氟化氮一同流動穿過遠端電漿系統(RPS)並進入反應區中。通常可選擇氨氣以及三氟化氮的流動速度，使得氫的原子流動速度大約為氟的兩倍，以有效利用這兩個製程氣體的組成物。氫與氟的存在可允許在相對低的基板溫度下形成固體副產物((NH4)2SiF6)。可藉由將基板溫度升高高於昇華溫度來移除該固體副產物。SiconiTM蝕刻製程移除氧化物薄膜的速度比移除不含氧的薄膜快。本發明人已發現到可藉由降低(或消除)氫的供應並維持三氟化氮的流動來反轉該選擇性。
為了更佳地理解本發明，現請參考第1與2圖，第1圖為不選擇氧化物的蝕刻製程，第2圖為根據本文所揭露的實施例的一淺溝槽絕緣(STI)結構。在第一操作之前，在多晶矽吸附層(adlayer)220-1與下層矽基板210中形成一間隙。利用氧化矽230將間隙填滿以電氣隔離該些元件(未圖示)。研磨氧化矽，使得氧化矽的表面與多晶矽的頂部大約共平面，並將氧化矽修整為低於多晶矽以達到如第2圖所顯示的結構。當基板被傳送進入製程腔室後(操作110)，開始第1圖的製程。注意到氧化矽230與多晶矽220的區域是曝露在基板表面上。
開始將三氟化氮流入與製程區域分開的電漿區域中(操作120)。可使用其他氟來源來加強或取代三氟化氮。在該等實施例中，含氟前驅物包含至少一個選自由下列所組成的群組的前驅物：三氟化氮、雙原子氟、單原子氟與氟取代的碳氫化合物。在本文中，分開的電漿區域可視為遠端電漿區域，且可在遠離製程腔室的分離模組中，或為製程腔室中的隔室。在此操作期間，氨氣流動可存在或不存在在遠端電漿區域中。當包含含氫前驅物時，含氫前驅物包含至少一個選自由下列所組成的群組的前驅物：原子氫、分子氫、氨氣、碳氫化合物以及非完全鹵素取代的碳氫化合物。可選擇三氟化氮與氨氣(選擇性使用)的流量，使得氟：氫的原子流動比率大於2：1、5：1或10：1其中一者。將來自遠端電漿的產物(電漿流出物)流入製程區域中並允許與圖案化基板表面相互作用(操作125)。選擇性蝕刻該圖案化層(操作130)，使得在所揭露的實施例中該多晶矽吸附層可被共形修整，同時以較慢的速度來蝕刻氧化矽間隙填充物230。根據氟流量：氫流量的比率，多晶矽的蝕刻速度可比氧化矽間隙填充的蝕刻速度快5或10倍。接著停止氣體流動(操作135)，並將基板由製程區域中移除(操作145)。在所揭露的實施例中，可將多晶矽修整為介於1nm至15nm之間。不建議將包含大量氧氣的流動引入遠端電漿區域(且 因而流入電漿流出物中)中，因為矽會被氧化而阻礙對於矽的期望蝕刻選擇性。根據本發明實施例，在蝕刻期間，電漿區域與基板製程區域不含氧或實質上不含氧。
第3圖為進行修整蝕刻後的蝕刻量圖表，該修整蝕刻例如為用於修整第2圖中的多晶矽吸附層220。注意到SiconiTM(具有比氟高出約兩倍的氫原子濃度)以明顯高於多晶矽的速度來移除氧化矽。當氫：氟的比率下降時，該選擇性會反轉。當傳輸相同份量的氫與氟至遠端電漿區域時，可以大約相同的速度來移除多晶矽與氧化矽。當氫：氟低於1：1時，多晶矽的蝕刻速度會超過氧化矽的蝕刻速度。在該等實施例中，當實質上沒有氫流入遠端電漿區域時，會造成多晶矽：氧化矽的蝕刻選擇性高於10：1。在該等實施例中，本發明技術可施加於不具有多晶矽吸附層的矽基板中的間隙，且該不選擇氧化物的蝕刻將以高於氧化矽間隙填充物的速度來移除矽。
第1至3圖所表示的選擇性蝕刻是與淺溝槽隔離應用一同說明。各種其他應用將受益於此矽選擇性蝕刻。舉例來說，此選擇性蝕刻可用於修整鰭式場效電晶體(finFET)結構的鰭板而不會移除有害數量的曝露含氧材料，例如，氧化矽。鰭式場效電晶體包含單一結晶矽的垂直突出構造，該單一結晶矽的厚度會影響元件效能。當利用本文所描述的遠端電漿選擇性蝕刻來進行處理時，單一結晶矽蝕刻的速度會與多晶矽類似。預期會出現本文所描述的元件結構的各種替代性幾何結構，且該些替代性幾何結構將受益於不選擇氧化物蝕刻。
本文所描述的遠端電漿蝕刻的應用並非限制於包含圖案化矽與氧化矽的系統。第4圖為選擇性蝕刻的流程圖，該選擇性蝕刻移除氮碳化矽(SiCN)的速度比移除碳氧化矽(SiOC)快。在該等實施例中，氮碳化矽實質上由矽、碳與氮所組成。同樣地，碳氧化矽實質上由矽、碳與氧所組成。第5A至5B圖為選擇性蝕刻前與選擇性蝕刻後的示例性應用示意圖。該示例性應用包含形成內金屬介電層。下層的銅層550具有氮碳化矽(SiCN)560-1形成在其上方，用於避免來自上覆低介電值薄膜570的污染物擴散。適合的氮碳化矽薄膜560-1為BlokTM，適合的低介電值薄膜570為黑金剛石(Black Diamond)，兩者均可購自位於加州聖大克勞拉市的應用材料公司。低介電值薄膜570形成在氮碳化矽層560-1上方，且利用氧化物選擇性蝕刻將該低介電值薄膜570圖案化以形成溝槽，如第5A圖所示。之後，利用金屬填充該溝槽，用以在不同金屬層之間形成傳導性連接。然而，在形成歐姆接點(ohmic contact)之前，必須先將介電質氮碳化矽移除。
當圖案化基板傳送進入製程腔室時(操作410)，開始第4圖的製程。開始將三氟化氮流入遠端電漿區域中(操作420)。該遠端電漿區域實質上不包含氫氣，或具有少量的氫氣流動，如先前第1至2圖所描述。無法由真空系統完全地移除氫氣，且「實質上不包含」氫氣係用於容納合理的誤差範圍。將電漿流出物流入製程區域中且允許電漿流出物與圖案化基板表面相互作用(操作425)。將圖案化層進行選擇性蝕刻(操作430)，使得氮碳化矽層會比碳氧化矽層優先被移除。持續該選擇性蝕刻直到將氮碳化矽部份由溝槽底部移除，以允許後續的金屬層可連接最新曝露的碳表面。停止前驅物的流動(操作435)，並將基板由製程區域中移除(操作445)。第5B圖顯示選擇性蝕刻後的氮碳化矽薄膜560-2。。
第6圖是根據本發明實施例的在不選擇氧化物蝕刻期間，碳氧化矽與氮碳化矽蝕刻速度的圖表。該些曲線表示在基板處理區域中蝕刻速度依賴三氟化氮分壓的關係。除了如先前所述依賴氫：氟的原子流動比率之外，該選擇性更依賴鄰近圖案化基板的三氟化氮的濃度。較低的分壓可增加氮碳化矽的選擇性多於碳氧化矽的選擇性，此情況在示例性應用中較佳。當三氟化氮分壓下降時，低於約50 mTorr的分壓，氮碳化矽與碳氧化矽的蝕刻速度均會減少。碳氧化矽的下降速度較快，這會允許增加對蝕刻碳氮化矽的選擇性。在不同實施例中，三氟化氮的分壓低於50 mTorr、30 mTorr或20 mTorr。
本文所描述的不選擇氧化物蝕刻，會以比蝕刻含氧矽薄膜更快的速度來蝕刻實質上不包含氧的材料。值得注意的是，即使並不希望包含氧，但在氮碳化矽與多晶矽中經常存在少量的氧。且，由於在準備與測量樣本期間的大氣污染，因此用於測定元素組成物的一般測量技術會過量報告氧的百分比。描述一個材料為「實質上不包含氧」或「不含氧」是容納這些作為可接受的誤差範圍。更具體地來說，具有少量氧的含矽薄膜會比具有較多氧的含矽薄膜更快速的進行蝕刻。在該等實施例中，含矽薄膜實質上是由非晶矽、結晶矽或多晶矽的矽所組成。相同地，含氧矽薄膜實質上是由氧化矽(SiO2)所組成。由於會以不同的速度來蝕刻這兩個薄膜，因此只要這兩個薄膜具有曝露表面，依然可使用不選擇氧化物的蝕刻。在本發明實施例中，曝露的含矽區域的蝕刻速度比曝露的含氧矽區域的蝕刻速度大5倍以上。
到目前為止已描述了不選擇氧化物的蝕刻。如第3圖所示，本文所描述的方法用於選擇性蝕刻矽的速度會快於氮化矽。該選擇性不如矽蝕刻選擇性高於氧化矽的例子一樣顯著。在各種製程流程中，這些差異依舊是有幫助的。這些蝕刻製程在本文中可視為不選擇氮化物蝕刻，且具有與不選擇氧化物的蝕刻相同的製程參數實施例。類似地，根據本發明實施例，在該些蝕刻製程期間，每一個遠端電漿區域與基板製程區域不包含氮或實質上不包含氮。一般來說，與具有比含矽材料更高的氮濃度的含氮矽材料比較起來，可選擇性蝕刻含矽材料。在本發明實施例中，曝露的含矽區域的蝕刻速度比曝露的含氮矽材料的蝕刻速度大1.5倍以上。含矽薄膜(例如矽)的蝕刻速度亦大於含氮氧矽薄膜的蝕刻 速度。
額外的不選擇氧化物蝕刻製程的參數揭露在描述示例性製程系統的段落中。
示例性製程系統
第7圖顯示一說明性製程腔室700的部分截面圖，在該腔室700中執行本發明的實施例。通常，將含氫前驅物與含氟前驅物透過一或多個孔口751導入遠端電漿區域761至763中，並藉由電漿功率來源746將該些前驅物激發。
在一實施例中，製程腔室700包含腔室主體712、蓋組件702與支撐組件710。蓋組件702設置在腔室主體712的上端，且該支撐組件710至少部分設置在腔室主體712中。製程腔室700與相關的硬體較佳是由一或多種製程相容材料所製成(例如，鋁、不鏽鋼等等)。
腔室主體712包含形成在腔室主體712側壁中的狹縫閥門開口760，以提供出入口至製程腔室700內部。選擇性開關狹縫閥門開口760以允許晶圓處理機械臂(未圖示)進出腔室主體712內部。在一實施例中，可透過狹縫閥門開口760將晶圓傳送至製程腔室700中，或將晶圓傳送出製程腔室700至相鄰的傳送腔室及/或裝載閘腔室、或群集工具中的其他腔室。第8圖圖示可包含製程腔室700的示例性群集工具。
在一或多個實施例中，腔室主體712包含腔室主體通 道713，用於流動熱傳輸流體通過腔室主體712。該熱傳輸流體可為加熱流體或冷卻劑，可用於在製程與基板傳輸期間，控制腔室主體712的溫度。加熱腔室主體712可幫助避免在腔室壁面上產生不需要的氣體或副產物凝結。示例性的熱傳輸流體包含水、乙二醇或前述流體的混合物。示例性熱傳輸流體亦可包含氮氣。支撐組件710可具有支撐組件通道704，用於流動熱傳輸流體通過支撐組件710，因而影響基板溫度。
腔室主體712可進一步包含圍繞該支撐組件710的襯墊733。襯墊733較佳是可移除的，以進行維修與清潔。襯墊733可由金屬製成，例如鋁或陶瓷材料。然而，襯墊733可為任何製程相容的材料。可將襯墊733進行噴砂以增加設置在襯墊733上方的任何材料的附著性，因而避免材料的剝落造成製程腔室700的污染。在一或多個實施例中，襯墊733包含一或多個孔口735以及形成在襯墊733中的抽取通道729，該抽取通道729與真空系統流體連通。孔口735為氣體提供流動路徑進入抽取通道729，並為製程腔室700中的氣體提供出口。
真空系統可包含真空幫浦725與節流閥727，以調節通過製程腔室700的氣體流動。真空幫浦725耦接至設置在腔室主體712中的真空埠731，因此與形成在襯墊733中的抽取通道729流體連通。除非特別說明，用語「氣體」與「多種氣體」是可交替使用的，且代表一或多種反應物、催化劑、載體、淨化氣體、清潔氣體及前 述物質的組合，以及其他導入腔室主體712中的流體。術語「前驅物」可視為參與反應的任何製程氣體，用於由表面移除材料或沉積材料。
孔口735允許抽取通道729與腔室主體712中的製程區域740流體連通。該製程區域740是由蓋組件702的下表面與支撐組件710的上表面所界定，並且以襯墊733圍繞該製程區域740。該些孔口735可具有一致的尺寸且沿著該襯墊733均勻地隔開該些孔口735。然而，可使用任何數量、位置、尺寸或形狀的孔口，並且可根據在橫跨基板接收表面上所期望的氣體流動圖案來改變每一個孔口的設計參數，以下將更詳細的討論。此外，孔口735的尺寸、數量與位置可配置以接收離開製程腔室700的均勻氣體流動。且，孔口的尺寸與位置可配置以提供快速或高容量的抽取，以幫助快速排出來自腔室700的氣體。舉例來說，非常接近真空埠731的孔口735的數量與尺寸是小於設置在遠離真空埠731的孔口735的尺寸。
通常使用氣體供給板(未圖示)透過一或多個孔口751提供製程氣體至製程腔室700。根據製程腔室700中所執行的製程或多個製程來使用特定氣體或多種氣體。說明性的氣體可包含，但不限制為一或多個前驅物、還原劑、催化劑、載體、淨化氣體、清潔氣體或任何混合物或前述物質的組合。通常，導入製程腔室700中的一或多種氣體透過在頂板750中的孔口751流入電漿容積761 中。另或合併，可更直接地透過孔口752將製程氣體導入製程區域740中。孔口752繞過遠端電漿激發且對於涉及不需電漿激發的氣體的製程或無法受益於氣體額外激發的製程來說是有幫助的。可使用電子操作閥門及/或流量控制機構(未圖示)控制由氣體供應器進入製程腔室700中的氣體流量。根據製程，可供應任何數量的氣體至製程腔室700，且可在製程腔室中混合該些氣體或在該些氣體供應至製程腔室700之前先進行混合。
蓋組件702可進一步包含電極745，用以在蓋組件702中產生反應性物種電漿。在一實施例中，藉由頂板750支撐電極745，且藉由插入電氣隔離環747將電極745與頂板750電氣隔離，該電氣隔離環747是由氧化鋁或任何其他絕緣或製程相容的材料所製成。在一或多個實施例中，電極745耦接至功率來源746，同時蓋組件702的支架接地。因此，可在遠端電漿區域中產生一或多種製程氣體電漿，該遠端電漿區域包含在電極745與環型安裝凸緣722之間的容積761、762及/或763。在該等實施例中，環型安裝凸緣包含或支撐氣體輸送板720。舉例來說，可在電極745與阻礙組件730的一個或兩個阻礙板之間激發與維持電漿。或者，在缺少阻礙組件730的情況下，可在電極745與氣體輸送板720之間觸發與包含電漿。在另一實施例中，電漿可良好地侷限或包含在蓋組件702中。因此，因為反應性電漿沒有直接與設置在腔室主體712中的基板接觸，所以該電漿為「遠端 電漿」。因為電漿與基板表面分開，所以可避免電漿對基板造成損壞。
各式各樣的功率來源746能夠用於激發含氮前驅物(三氟化氮)。例如，可使用射頻(RF)、直流(DC)或微波(MW)的功率放電技術。亦可藉由熱技術、氣體分解技術、高強度光源(例如，UV能量)或曝露至X-光源來產生激發。或者，可使用遠端激發來源，例如，遠端電漿產生器，來產生反應性物種電漿，接著將該反應性物種電漿傳輸至腔室700中。可由供應商(例如，MSK Instrument Inc.以及Advanced Energy Industries,Inc.)購得示例性的遠端電漿產生器。在示例性的製程系統中，RF功率供應器耦接至電極745。在使用功率來源746亦產生反應性氧的情況中，高功率微波功率來源746是有利的。
可藉由將熱傳輸媒介分別流動通過腔室主體713與支撐組件通道704來控制製程腔室主體712與基板的溫度。支撐組件通道704可形成在支撐組件710中，以幫助傳輸熱能。可獨立地冷卻或加熱腔室主體712與支撐組件710。例如，加熱流體可流動通過其中一個，而冷卻流體流動通過另一個。
可使用其他方法來控制基板溫度。藉由利用電阻加熱器或一些其他裝置加熱支撐組件710(或支撐組件710的一部分，例如基座)來加熱基板。在其他配置中，氣體輸送板720可維持在比基板高的溫度，並且將基板升高以提升基板溫度。在此例子中，藉由輻射加熱基板，或者 藉由使用氣體將熱由氣體輸送面板720傳導至基板而加熱基板。藉由升高支撐組件710或者使用升降銷來提高基板。
在本文所描述的蝕刻製程期間，在不同實施例中，可將腔室主體712維持在接近50℃至80℃之間的溫度範圍、55℃至75℃之間的溫度範圍、或60℃至70℃之間的溫度範圍。在曝露至電漿流出物及/或氧化劑期間，在不同實施例中，基板可維持在低於約100℃、低於約65℃、或介於約15℃至約50℃之間或介於約22℃至約40℃之間。由於不選擇氧化物的蝕刻不會像昇華步驟(假如會進行的話)那麼依賴溫度，所以在蝕刻期間亦可將基板維持在高溫。在所揭露的實施例中，可將基板維持在高於70℃、高於100℃或高於130℃。
電漿流出物包含各種分子、分子碎片以及離子化物種。在不選擇氧化物蝕刻期間，電漿流出物包含氟自由基，該氟自由基可與缺少氧或擁有少量氧的曝露的含矽材料快速反應。電漿流出物可與不含氧的含矽層反應，以形成氟化矽(SiF)與水蒸氣產物，該些產物可藉由真空幫浦725由製程區域740中移除。
在該等實施例中，將少量的氫或不將氫導入遠端電漿區域中。在此情況下，在基板表面上產生少量的固體殘餘物或不產生固體殘餘物，並且可忽略昇華步驟。當包含氫來源時，可將基板加熱以昇華固體殘餘蝕刻副產物，該固體殘餘蝕刻副產物是將基板曝露至電漿流出物後所形成的。在該等實施例中，藉由在氣體輸送面板720中或接近氣體輸送面板720處插入加熱元件770來加熱氣體輸送板720。藉由降低基板與已加熱的氣體輸送板之間的距離來加熱基板。在不同實施例中，氣體輸送板720可加熱至介於約100℃至150℃之間、介於約110℃至140℃之間、或介於約120℃至130℃之間。在不同實施例中，藉由降低基板與已加熱的氣體輸送板之間的分隔距離，可將基板加熱至高於約75℃、高於約90℃、高於約100℃、或介於約115℃至約150℃之間。當氫來源伴隨著氟來源一起流動時，由氣體輸送板720輻射至基板的熱必須要足以將來自基板的氧化物部分的(NH4)2SiF6固體解離或昇華為揮發性的四氟化矽(SiF4)、氨氣(NH3)與氟化氫(HF)產物，該些產物可由製程區域740中被抽離。
在不同實施例中，以介於約25 sccm至約200 sccm之間的速度、介於約50 sccm至約150 sccm之間的速度、或介於約75 sccm至約125 sccm之間的速度，將三氟化氮(或其他含氟前驅物)流入遠端電漿容積761中。在不同實施例中，以低於或約20 sccm的速度、低於或約15 sccm的速度、低於或約10 sccm的速度、低於或約5 sccm的速度、或低於或約2 sccm的速度，將氨氣(或一般含氫前驅物)流入遠端電漿容積761中。
含氫前驅物與含氟前驅物流入遠端電漿區域中的合併流動速度可為總氣體混合物的0.05體積%至約20體積%，剩餘部份為載氣。在一實施例中，在反應性氣體流入遠端電漿區域之前，先將淨化氣體或載氣流入遠端電漿區域中，以穩定遠端電漿區域中的壓力。
藉由將電漿功率相對於蓋組件702支架施加至電極745，在容積761、762及/或763中產生電漿流出物產物。電漿功率可為頻率的變化或多個頻率的組合。在示例性的製程系統中，藉由傳送至電極745的RF功率來提供電漿。在不同實施例中，該RF功率可介於約1 W至約1000 W之間、介於約5 W至約600 W之間、介於約10 W至約300 W之間或介於約20 W至約100 W之間。在不同實施例中，施加在示例性製程系統的RF頻率可小於約200 kHz、小於約150 kHz、小於約120 kHz、或介於約50 kHz至約90 kHz之間。
在電漿流出物流入製程區域740期間，製程區域740可維持在各種壓力下。在不同實施例中，該壓力可維持在介於約500 mTorr至約30 Torr之間、介於約1 Torr至約10 Torr之間、或介於約3 Torr至約6 Torr之間。亦可在製程區域740中使用較低壓力。在不同實施例中，該壓力可維持在低於或約500 mTorr、低於或約250 mTorr、低於或約100 mTorr、低於或約50 mTorr、或低於或約20 mTorr。
藉由在電漿流出物流入基板製程區域之前，中和產生在容積761至763中的帶電物種，可提高蝕刻製程的選擇性。中性反應性自由基(分子碎片)依然進入基板製程區域中並且與基板反應以執行選擇性蝕刻製程。為了達到此目的，將噴淋頭中的孔洞變窄，以當電漿流出物移動朝向基板製程區域時，可增加中和性碰撞。在電漿流出物路徑中亦可包含分離的噴淋頭，以抑制離子流動進入基板製程區域中。該分離的噴淋頭可視為離子抑制器(未圖示)。這些中和(不帶電的)物種仍包含高反應性物種，並與低反應性載氣一起傳輸通過該些孔洞。可在每個分子碎片基礎上，將進入基板製程區域的離子化流動減少至低於中性物種的流動。在所揭露的實施例中，該流動亦可低於中性物種的10%或者可實質消除該流動。控制進入基板製程區域的離子物種數量可提升對被帶入與下層晶圓基板接觸的氣體混合物的控制，因而增加蝕刻製程的選擇性。
在離子抑制器及/或噴淋頭中的複數個孔洞可配置以控制活化氣體(亦即，離子性、自由基、及/或中性物種)進入基板製程區域的通道。例如，可控制孔洞的高寬比(亦即，孔洞的直徑與長度比)及/或孔洞的幾何形狀，使得降低進入基板製程區域的活性氣體中離子性帶電物種的流動。該些孔洞包含面向遠端電漿區域(容積761、762及/或763)的錐形部份。該錐形可允許大量的電漿流出物進入孔洞中，而在電漿流出物進入製程區域之前，使大比例的電漿流出物進行中和性碰撞。亦可對離子抑制器及或噴淋頭施加一可調式偏壓，以作為控制通過抑制器的離子性物種流動的附加手段。
在一或多個實施例中，可將製程腔室700整合在各種多製程平台中，包含可由位於加州聖大克勞拉市的應用材料公司所購得的ProducerTM GT、CenturaTM AP與EnduraTM平台。這些製程平台能夠執行多個製程操作而不破壞真空狀態。
第8圖為示例性的多腔室製程系統800的俯視圖。系統800包含一或多個裝載閘腔室802、804，用於傳送基板進出系統800。通常，因為系統800是處於真空狀況下，所以該裝載閘腔室802、804可「排空(pump down)」導入系統800中的基板。第一機械臂810可在裝載閘腔室802、804與第一組的一或多個基板製程腔室812、814、816、818(圖示4個)之間傳送基板。可將每一個製程腔室812、814、816、818裝備為可執行多個基板製程操作，該等操作包含本文所描述的乾式蝕刻製程、循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、除氣、分子配向及其他基板製程。
第一機械臂810亦可將基板傳送至一或多個傳送腔室822、824，或由一或多個傳送腔室822、824傳送基板。可使用傳送腔室822、824來維持超高的真空條件，同時允許基板在系統800中傳送。第二機械臂830可在傳送腔室822、824與第二組的一或多個製程腔室832、834、836、838之間傳送基板。與製程腔室812、814、816、818類似，可將製程腔室832、834、836、838裝備為可執行各種基板製程操作，例如，包含本文所描述的乾式蝕刻製程，還包含循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、除氣、分子配向。假如不需要藉由系統800來執行特定製程，可將任何一個基板製程腔室812、814、816、818、832、834、836、838由系統800中移除。
可使用系統控制器857來控制馬達、閥門、流動控制器、功率供應器以及其他執行本文所述製程的所需功能。系統控制器857可依賴於來自光學感測器的反餽，以測定並調整可移動式機械組件的位置。機械組件可包含機械臂、節流閥與基座，可在系統控制器857的控制下藉由馬達來控制該等機械組件。
在一示例性實施例中，系統控制器857包含硬碟機(記憶體)、USB埠、軟碟機以及處理器。系統控制器857包含類比與數位輸入/輸出板、介面板與步進馬達控制板。可藉由系統控制器857來控制包含製程腔室800的多腔室處理系統800的各個部份。該系統控制器以電腦程式的方式來執行系統控制軟體，該電腦程式儲存在電腦可讀取媒介中，例如，硬碟、軟碟或快閃記憶體隨身碟。亦可使用其他類型的記憶體。該電腦程式包含多組指令，該些指令可指示時序、氣體混合物、腔室壓力、腔室溫度、RF功率位準、基座位置以及其他特定製程參數。
可使用電腦程式產品來執行用於蝕刻、沉積或其他處理基板上薄膜的製程或用於清潔腔室的製程，該電腦程式產品由控制器所執行。該電腦程式編碼可以任何慣用的電腦可讀取程式語言來撰寫，例如：68000組合語言、C、C++、Pascal、Fortran或其他。使用慣用的正文編輯器將適合的程式編碼寫入單一檔案或多個檔案中，並將適合的程式編碼儲存或崁入電腦可使用媒介中，例如電腦的記憶體系統。若是以高階語言來寫入該編碼正文，則編譯該編碼，接著將所產生的編譯程式碼與先行編譯的Microsoft Windows®庫存程式的目標碼連接。為了執行已連接且編譯的目標碼，系統使用者調用目標碼，使電腦系統載入該編碼至記憶體中。接著CPU讀取並執行該編碼，以執行程式中所標識的工作。
使用者與控制器之間的介面可透過觸模感應監視器，且亦可包含滑鼠與鍵盤。在一實施例中使用兩個監視器，一個設置在清潔室壁面，提供給操作者使用，另一個在壁面後方，提供給技術人員使用。兩個監視器可同時顯示相同資訊，在此情況中，一次只能配置一個監視器接收輸入。為了選擇特定螢幕或功能，操作者以手或滑鼠觸碰顯示器螢幕上的指定區域。所觸碰的區域會改變其高亮顏色、或是會顯示新的選單或螢幕以確認操作者的選擇。
本文所使用的「基板」可為具有或不具有層形成在基板上的支撐基板。該支撐基板可為絕緣體或具有各種摻雜濃度與分佈的半導體，且該支撐基板可為，例如使用在積體電路製程中的半導體基板。在「激發態」的氣體是描述在該氣體中，至少一些氣體分子是處於震動激發、解離、及/或離子態。氣體可為兩種或兩種以上氣體的組合。「氧化矽」主要為SiO2，但可包含其他濃度的元素成分，例如，氮、氫、碳等等。使用在全文中的用語「間隙」與「溝槽」不代表該蝕刻幾何形狀具有較大的水平高寬比。由表面上方觀看，這些結構可呈現圓形、卵形、多邊形、矩形或其他各種形狀。如本文所使用，共形蝕刻製程代表將表面上的材料大體上均勻移除成為與表面相同的形狀，亦即，經蝕刻層的表面與預蝕刻表面大體上平行。在此技術領域中具有通常知識者可理解到該已蝕刻表面可能並非100%共形，因此該用語「大體上」允許可接受的誤差範圍。
已揭露了多個實施例，在此技術領域中具有通常知識者可理解到可使用各種修飾、替代結構以及等效例，而不會偏離所揭露實施例的精神。此外，為了避免對本發明不必要的混淆，並未描述一些已知的製程與構件。因此，以上描述並非用於限制本發明的範疇。
就所提供的數值範圍而言，應理解到本文亦特別揭露介於該範圍上限與下限之間的每一個居中值，除非文中清楚指示，否則每一個居中值為該下限單位的十分之一。包含介於設定範圍中的任何設定值或居中值與設定範圍中的任何其他設定或居中值之間的每一個較小範圍。這些較小範圍的上限與下限可獨立包含或排除在範圍中，且每一個範圍(其中該上限及/或下限包含在較小範圍中，或是上下限均不包含在較小範圍中)亦包含在本發明中，可特別排除設定範圍中的限值。就設定範圍包含一個或兩個限值而言，亦包含排除所包含任一或兩個限值的範圍。
如在本文與後附申請專利範圍中所使用，除非文中清楚指示，否則單數形式「一(a、an)」與「該(the)」包含複數個參照物。因此，例如，引用「一製程」包含複數個此製程，以及引用「該介電材料」包含引用一或多個介電材料以及在此技術領域中具有通常知識者已知的該介電材料的相等物等等。
同樣地，當使用在本說明書與後附申請專利範圍中時，該措辭「包含(comprise、comprising、include、including與includes)」，意圖去指定特定特徵、整數、元件或步驟的存在，但並非排除一或多個其他特徵、整數、元件、步驟、動作或群組的存在或附加。
110．．．操作
120．．．操作
125．．．操作
130．．．操作
135．．．操作
145．．．操作
210．．．矽晶板
220-1．．．多晶矽吸附層
220-2．．．多晶矽吸附層
230．．．氧化矽
410．．．操作
420．．．操作
425．．．操作
430．．．操作
435．．．操作
445．．．操作
550．．．銅層
560-1．．．氮碳化矽
560-2．．．氮碳化矽
570．．．低介電值薄膜
700．．．製程腔室
702．．．蓋組件
704．．．支撐組件通道
710．．．支撐組件
712．．．腔室主體
713．．．腔室主體通道
720．．．氣體輸送板
722．．．環型安裝凸緣
725．．．真空幫浦
727．．．節流閥
729．．．抽取通道
730．．．阻礙組件
731．．．真空埠
733．．．襯墊
735．．．孔口
740．．．製程區域
745．．．電極
746．．．電漿功率來源
747．．．電氣隔離環
750．．．頂板
751．．．孔口
752．．．孔口
760．．．狹縫閥門開口
761．．．遠端電漿區域
762．．．遠端電漿區域
763．．．遠端電漿區域
770．．．加熱元件
800．．．多腔室製程系統
802．．．裝載閘腔室
804．．．裝載閘腔室
810．．．第一機械臂
812．．．基板製程腔室
814．．．基板製程腔室
816．．．基板製程腔室
818．．．基板製程腔室
822．．．傳送腔室
824．．．傳送腔室
830．．．第二機械臂
832．．．製程腔室
834．．．製程腔室
836．．．製程腔室
838．．．製程腔室
853．．．遠端電漿系統
857．．．系統控制器
藉由參考上述說明書內容與圖式可進一步理解本文所揭露的實施例的本質與優點。
第1圖是根據本發明實施例的矽選擇性蝕刻製程的流程圖。
第2A與2B圖是根據本發明實施例的矽選擇性蝕刻製程前後的示意圖。
第3圖表示在根據本發明實施例的矽選擇性蝕刻期間，氧化矽、氮化矽與多晶矽的蝕刻速度圖表。
第4圖是根據本發明實施例的選擇性蝕刻製程的流程圖。
第5A至5B圖是根據本發明實施例的選擇性蝕刻製程前後的示意圖。
第6圖表示在根據本發明實施例的選擇性蝕刻期間，碳氧化矽與氮碳化矽的蝕刻速度圖表。
第7圖是用於執行根據本發明實施例的蝕刻製程的製程腔室截面圖。
第8圖是用於執行根據本發明實施例的蝕刻製程的製程系統。
在所附圖式中，類似的構件及/或特徵具有相同的元件符號。且，可利用在元件符號後以破折號與可區分類似構件的第二符號來區分相同類型的各種構件。假如在說明書中僅使用第一元件符號，則該描述可適用於具有相同第一元件符號的任何一個類似構件，而不管第二元件符號為何。
110．．．操作
120．．．操作
125．．．操作
130．．．操作
135．．．操作
145．．．操作

Claims (16)

  1. 一種在一基板製程腔室的一基板製程區域中蝕刻一圖案化基板的方法，其中該圖案化基板具有一曝露的含氧矽區域與一曝露的含矽區域，該含矽區域包含比該含氧矽區域少量的氧，該方法包含：將一含氟前驅物流入與該基板製程區域流體耦接的一遠端電漿區域中，同時在該遠端電漿區域中形成一電漿，用以產生電漿流出物；在將該等電漿流出物流入該基板製程區域之前，中和產生在該遠端電漿區域中的帶電物種，以致該等電漿流出物包含少於10%的帶電物種；藉由將該等電漿流出物流入該基板製程區域中，以比蝕刻該曝露的含氧矽區域快的速度來蝕刻該曝露的含矽區域，其中在維持該含氟前驅物的一分壓低於約100mTorr時執行該蝕刻步驟；及其中該曝露的含矽區域實質上由矽所組成且該蝕刻步驟係大體上均勻的。
  2. 如請求項1之方法，其中該曝露的含矽區域的一蝕刻速度比該曝露的含氧矽區域的一蝕刻速度大5倍以上。
  3. 如請求項1之方法，其中該曝露的含矽區域實質上不包含氧。
  4. 如請求項1之方法，其中該曝露的含氧矽區域實質上由氧化矽(SiO2)所組成。
  5. 如請求項1之方法，其中該曝露的含矽區域為多晶矽，該曝露的含氧矽區域為氧化矽(SiO2)，且將該多晶矽修整為介於1nm至15nm之間。
  6. 如請求項1之方法，其中該曝露的含氧矽區域實質上由矽、碳與氧所組成。
  7. 如請求項1之方法，其中該含氟前驅物包含至少一個選自由下列物質所組成的群組的前驅物：三氟化氮、雙原子氟、單原子氟以及氟取代的碳氫化合物。
  8. 如請求項1之方法，其中該等電漿流出物擁有氟：氫大於5：1的一原子比率。
  9. 如請求項1之方法，其中在該基板製程區域的該等電漿流出物中實質上不存在離子化物種，用以增加該含矽區域的該蝕刻選擇性。
  10. 一種在一基板製程腔室的一基板製程區域中蝕刻一圖案化基板的方法，其中該圖案化基板具有一曝露的含 氮矽區域與一曝露的含矽區域，該含矽區域包含比該含氮矽區域少量的氮，該方法包含：將一含氟前驅物流入與該基板製程區域流體耦接但物理上分隔的一遠端電漿區域中，同時在該遠端電漿區域中形成一電漿，用以產生電漿流出物；在將該等電漿流出物流入該基板製程區域之前，藉由將該等電漿流出物流過一配置在該基板製程腔室中的離子抑制板來中和產生在該遠端電漿區域中的帶電物種，其中該等離開該離子抑制板的電漿流出物包含少於10%的帶電物種；藉由將該等電漿流出物流入該基板製程區域中，以比蝕刻該曝露的含氮矽區域快的速度來蝕刻該曝露的含矽區域；及其中該曝露的含矽區域實質上由矽所組成且該蝕刻步驟係大體上均勻的。
  11. 如請求項10之方法，其中該曝露的含矽區域的一蝕刻速度比該曝露的含氮矽區域的一蝕刻速度大1.5倍以上。
  12. 如請求項10之方法，其中該曝露的含矽區域實質上不包含氮。
  13. 如請求項10之方法，其中該曝露的含氮矽區域實質 上由氮化矽所組成。
  14. 如請求項10之方法，其中該含氟前驅物包含至少一個選自由下列物質所組成的群組的前驅物：三氟化氮、雙原子氟、單原子氟以及氟取代的碳氫化合物。
  15. 如請求項10之方法，其中該含氟前驅物與該等電漿流出物實質上不含氫。
  16. 如請求項10之方法，其中該等電漿流出物擁有氟：氫大於5：1的一原子比率。
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