TW200845312A - Nonvolatile semiconductor memory and manufacturing method thereof - Google Patents

Nonvolatile semiconductor memory and manufacturing method thereof Download PDF

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Publication number
TW200845312A
TW200845312A TW096149605A TW96149605A TW200845312A TW 200845312 A TW200845312 A TW 200845312A TW 096149605 A TW096149605 A TW 096149605A TW 96149605 A TW96149605 A TW 96149605A TW 200845312 A TW200845312 A TW 200845312A
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TW
Taiwan
Prior art keywords
gate
layer
semiconductor
transistor
semiconductor substrate
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Application number
TW096149605A
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English (en)
Chinese (zh)
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TWI358107B (https=
Inventor
Fumitaka Arai
Riichiro Shirota
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Toshiba Kk
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Publication of TW200845312A publication Critical patent/TW200845312A/zh
Application granted granted Critical
Publication of TWI358107B publication Critical patent/TWI358107B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW096149605A 2006-12-21 2007-12-21 Nonvolatile semiconductor memory and manufacturing method thereof TW200845312A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006344803A JP4772656B2 (ja) 2006-12-21 2006-12-21 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
TW200845312A true TW200845312A (en) 2008-11-16
TWI358107B TWI358107B (https=) 2012-02-11

Family

ID=39640393

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096149605A TW200845312A (en) 2006-12-21 2007-12-21 Nonvolatile semiconductor memory and manufacturing method thereof

Country Status (4)

Country Link
US (2) US7875922B2 (https=)
JP (1) JP4772656B2 (https=)
KR (1) KR100921287B1 (https=)
TW (1) TW200845312A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407551B (zh) * 2009-08-10 2013-09-01 東芝股份有限公司 Nonvolatile semiconductor memory device and manufacturing method thereof
TWI501384B (zh) * 2009-09-29 2015-09-21 Samsung Electronics Co Ltd 垂直式半導體裝置及其製造方法
TWI557883B (zh) * 2015-06-04 2016-11-11 東芝股份有限公司 Semiconductor memory device and manufacturing method thereof

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