JP4445514B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP4445514B2 JP4445514B2 JP2007104072A JP2007104072A JP4445514B2 JP 4445514 B2 JP4445514 B2 JP 4445514B2 JP 2007104072 A JP2007104072 A JP 2007104072A JP 2007104072 A JP2007104072 A JP 2007104072A JP 4445514 B2 JP4445514 B2 JP 4445514B2
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- 239000004065 semiconductor Substances 0.000 title claims description 160
- 230000002093 peripheral effect Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 40
- 238000013459 approach Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 207
- 238000000034 method Methods 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 28
- 238000003860 storage Methods 0.000 description 17
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- 238000009792 diffusion process Methods 0.000 description 13
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- 239000011229 interlayer Substances 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000001459 lithography Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000000470 constituent Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003949 trap density measurement Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Metal Oxide Nitride Chemical class 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
[1.NAND型フラッシュメモリ10の基本構成]
まず、NAND型フラッシュメモリ10の基本構成について説明する。図1は、本発明の第1の実施形態に係るNAND型フラッシュメモリ10の平面図である。図2は、図1に示したII−II線に沿ったNAND型フラッシュメモリ10の断面図である。図3は、図1に示したIII−III線に沿ったNAND型フラッシュメモリ10の断面図である。
次に、このように構成されたNAND型フラッシュメモリ10のデータ書き込み動作、データ読み出し動作、及びデータ消去動作について説明する。
次に、NAND型フラッシュメモリ10の製造方法の一例について説明する。まず、図6に示すように、リソグラフィ工程及びRIE(Reactive Ion Etching)法を用いて、メモリセルアレイ領域に対応する基板13内に、ゲート配線積層体15の高さと同程度の深さを有する開口部23を形成する。続いて、メモリセルアレイ領域に対応する基板13内に、N+型不純物を導入して、N+型拡散領域14を形成する。
次に、ゲート配線積層体15に含まれるゲート配線層17と周辺回路12−1とを電気的に接続するコンタクト34の配置例について説明する。ゲート配線層17は、その上端が周辺回路12−1に接続される。このため、ゲート配線積層体15の上面には、周辺回路12−1に接続された配線35とゲート配線層17とを電気的に接続するコンタクト34が設けられている。
次に、半導体ピラー22の他の構成例について説明する。図18は、半導体ピラー22の他の構成例を説明するためのIII−III線に沿ったNAND型フラッシュメモリ10の断面図である。
次に、選択ゲートトランジスタST1,ST2の他の構成例について説明する。図20は、選択ゲートトランジスタST1,ST2の他の構成例を説明するためのIII−III線に沿ったNAND型フラッシュメモリ10の断面図である。
第2の実施形態は、ゲート配線積層体15の周辺回路12−1側の側面を、上に向かって幅が大きくなるように斜めにすることで、ゲート配線層17の上端の面積を大きくするようにしている。
第3の実施形態は、隣接する2つのゲート配線積層体を接続し、この2つのゲート配線積層体が配線を共有することで、配線の数を少なくするようにしている。
第4の実施形態は、第3の実施形態の変形例であり、メモリセル列の両端に選択ゲートトランジスタST1,ST2が接続されたNANDセルユニットの構成例である。
Claims (5)
- メモリセルアレイ領域と周辺回路領域とを有する基板と、
前記メモリセルアレイ領域に設けられ、かつ垂直方向に積層された複数のメモリセルを有するメモリセルアレイと、
前記周辺回路領域に設けられ、かつ前記メモリセルアレイに電気信号を供給する周辺回路と、
前記メモリセルアレイ領域に対応する基板上に設けられ、かつ前記メモリセルアレイに電気的に接続され、かつ絶縁層を介して積層された複数の配線層と、
前記複数の配線層上にそれぞれ設けられ、かつ前記周辺回路に電気的に接続された複数のコンタクトと、
を具備し、
前記複数の配線層の各々は、水平方向に延在する第1の部分と、前記第1の部分の一端から垂直方向に対して前記周辺回路に近づくように斜め方向に延在する第2の部分とを有し、
前記メモリセルアレイの底面は、前記周辺回路の底面より低いことを特徴とする半導体記憶装置。 - 前記第2の部分と前記コンタクトとが接触する面積は、前記第2部分を垂直方向に延在させた場合より広いことを特徴とする請求項1に記載の半導体記憶装置。
- 前記周辺回路領域に対応する基板の上面は、前記メモリセルアレイの上面と同じ位置であることを特徴とする請求項1又は2に記載の半導体記憶装置。
- 前記メモリセルアレイは、前記基板に設けられた開口部に設けられることを特徴とする請求項1乃至3のいずれかに記載の半導体記憶装置。
- 前記複数のコンタクトは、隣接するもの同士が前記配線層の幅方向にずれて配置されることを特徴とする請求項1乃至4のいずれかに記載の半導体記憶装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007104072A JP4445514B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体記憶装置 |
US12/061,075 US8183624B2 (en) | 2007-04-11 | 2008-04-02 | Semiconductor memory device |
TW097112010A TW200908234A (en) | 2007-04-11 | 2008-04-02 | Semiconductor memory device |
KR1020080033304A KR100975681B1 (ko) | 2007-04-11 | 2008-04-10 | 반도체 기억 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007104072A JP4445514B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008263029A JP2008263029A (ja) | 2008-10-30 |
JP4445514B2 true JP4445514B2 (ja) | 2010-04-07 |
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JP2007104072A Expired - Fee Related JP4445514B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体記憶装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8183624B2 (ja) |
JP (1) | JP4445514B2 (ja) |
KR (1) | KR100975681B1 (ja) |
TW (1) | TW200908234A (ja) |
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