KR101988341B1 - 발광 장치 및 발광 장치를 제작하기 위한 방법 - Google Patents

발광 장치 및 발광 장치를 제작하기 위한 방법 Download PDF

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KR101988341B1
KR101988341B1 KR1020187010617A KR20187010617A KR101988341B1 KR 101988341 B1 KR101988341 B1 KR 101988341B1 KR 1020187010617 A KR1020187010617 A KR 1020187010617A KR 20187010617 A KR20187010617 A KR 20187010617A KR 101988341 B1 KR101988341 B1 KR 101988341B1
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layer
oxide semiconductor
transistor
light emitting
oxide
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KR20180041264A (ko
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순페이 야마자키
준이치로 사카타
마사유키 사카쿠라
요시아키 오이카와
켄이치 오카자키
호타카 마루야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H01L27/1225—
    • H01L27/124—
    • H01L27/322—
    • H01L27/3262—
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Led Devices (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
KR1020187010617A 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법 Active KR101988341B1 (ko)

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Application Number Priority Date Filing Date Title
JPJP-P-2009-204972 2009-09-04
JP2009204972 2009-09-04
PCT/JP2010/063734 WO2011027661A1 (en) 2009-09-04 2010-08-06 Light-emitting device and method for manufacturing the same

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KR1020177014967A Division KR101851926B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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KR1020197016168A Division KR102113148B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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KR20180041264A KR20180041264A (ko) 2018-04-23
KR101988341B1 true KR101988341B1 (ko) 2019-06-12

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KR1020187010617A Active KR101988341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020177014967A Active KR101851926B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020127008606A Expired - Fee Related KR101707433B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020227012580A Active KR102528026B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197036568A Active KR102221207B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197016168A Active KR102113148B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020257005802A Pending KR20250030527A (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020167025700A Active KR101745341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020237013964A Active KR102775255B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020217005143A Active KR102389975B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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KR1020127008606A Expired - Fee Related KR101707433B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020227012580A Active KR102528026B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197036568A Active KR102221207B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020197016168A Active KR102113148B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020257005802A Pending KR20250030527A (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020167025700A Active KR101745341B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020237013964A Active KR102775255B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법
KR1020217005143A Active KR102389975B1 (ko) 2009-09-04 2010-08-06 발광 장치 및 발광 장치를 제작하기 위한 방법

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US (8) US8502225B2 (enExample)
JP (11) JP5292372B2 (enExample)
KR (10) KR101988341B1 (enExample)
CN (2) CN102498570B (enExample)
TW (7) TWI517258B (enExample)
WO (1) WO2011027661A1 (enExample)

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KR101592013B1 (ko) * 2008-10-13 2016-02-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2011027701A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101988341B1 (ko) * 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011034068A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
WO2011043164A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101820972B1 (ko) 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
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CN102598279B (zh) * 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
EP2497115A4 (en) 2009-11-06 2015-09-02 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
KR102345456B1 (ko) 2009-11-27 2021-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
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TWI525377B (zh) 2010-01-24 2016-03-11 半導體能源研究所股份有限公司 顯示裝置
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JP2012163651A (ja) * 2011-02-04 2012-08-30 Sony Corp 有機ｅｌ表示装置及び電子機器
TWI573277B (zh) * 2011-05-05 2017-03-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
FR2975213B1 (fr) * 2011-05-10 2013-05-10 Trixell Sas Dispositif d'adressage de lignes d'un circuit de commande pour matrice active de detection
JP4982620B1 (ja) * 2011-07-29 2012-07-25 富士フイルム株式会社 電界効果型トランジスタの製造方法、並びに、電界効果型トランジスタ、表示装置、イメージセンサ及びｘ線センサ
JP6099336B2 (ja) 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
JP2013093565A (ja) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd 半導体装置
CN103946742B (zh) * 2011-11-18 2016-08-31 夏普株式会社 半导体装置、显示装置和半导体装置的制造方法
KR101339000B1 (ko) * 2011-12-14 2013-12-09 엘지디스플레이 주식회사 유기전계발광 표시소자 및 그 제조방법
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KR101451403B1 (ko) * 2012-06-26 2014-10-23 엘지디스플레이 주식회사 금속 산화물 반도체를 포함하는 박막 트랜지스터 기판 및 그 제조 방법
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