KR101547093B1 - 산화규소 함유 필름의 형성 방법 - Google Patents

산화규소 함유 필름의 형성 방법 Download PDF

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KR101547093B1
KR101547093B1 KR1020157009322A KR20157009322A KR101547093B1 KR 101547093 B1 KR101547093 B1 KR 101547093B1 KR 1020157009322 A KR1020157009322 A KR 1020157009322A KR 20157009322 A KR20157009322 A KR 20157009322A KR 101547093 B1 KR101547093 B1 KR 101547093B1
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gas
reaction chamber
oxygen
ozone
silicon oxide
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KR20150047631A (ko
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크리스챤 듀싸라트
쥴리엔 가티네우
가즈타카 야나기타
에리 츠카다
이쿠오 스즈키
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레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H10P14/69215—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H10P14/24—
    • H10P14/6689—
    • H10P14/6334—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6682—
    • H10P14/6686—
    • H10P14/6687—
    • H10P14/6922—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Compounds (AREA)
KR1020157009322A 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법 Active KR101547093B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005077608A JP2006261434A (ja) 2005-03-17 2005-03-17 シリコン酸化膜の形成方法
JPJP-P-2005-077608 2005-03-17
PCT/EP2006/060829 WO2006097525A2 (en) 2005-03-17 2006-03-17 Method of forming silicon oxide containing films

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147010408A Division KR20140069192A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법

Publications (2)

Publication Number Publication Date
KR20150047631A KR20150047631A (ko) 2015-05-04
KR101547093B1 true KR101547093B1 (ko) 2015-08-24

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ID=36764030

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Application Number Title Priority Date Filing Date
KR1020157009322A Active KR101547093B1 (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020147010408A Ceased KR20140069192A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020127002046A Active KR101248358B1 (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020137004043A Ceased KR20130027573A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020097019562A Ceased KR20090107090A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020077023846A Active KR100961805B1 (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020147010408A Ceased KR20140069192A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020127002046A Active KR101248358B1 (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020137004043A Ceased KR20130027573A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020097019562A Ceased KR20090107090A (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법
KR1020077023846A Active KR100961805B1 (ko) 2005-03-17 2006-03-17 산화규소 함유 필름의 형성 방법

Country Status (9)

Country Link
US (2) US8227032B2 (enExample)
EP (1) EP1861519B1 (enExample)
JP (3) JP2006261434A (enExample)
KR (6) KR101547093B1 (enExample)
CN (1) CN101171366A (enExample)
AT (1) ATE482301T1 (enExample)
DE (1) DE602006017042D1 (enExample)
TW (2) TWI435387B (enExample)
WO (1) WO2006097525A2 (enExample)

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