JP2007505501A - フィールドプレートを有するワイドバンドギャップトランジスタデバイス - Google Patents

フィールドプレートを有するワイドバンドギャップトランジスタデバイス Download PDF

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Publication number
JP2007505501A
JP2007505501A JP2006526270A JP2006526270A JP2007505501A JP 2007505501 A JP2007505501 A JP 2007505501A JP 2006526270 A JP2006526270 A JP 2006526270A JP 2006526270 A JP2006526270 A JP 2006526270A JP 2007505501 A JP2007505501 A JP 2007505501A
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Prior art keywords
gate
layer
transistor
field plate
contact
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Pending
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JP2006526270A
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Japanese (ja)
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JP2007505501A5 (enExample
Inventor
パリーク プリミット
ウー イーフェン
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Wolfspeed Inc
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Cree Inc
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Publication of JP2007505501A publication Critical patent/JP2007505501A/ja
Publication of JP2007505501A5 publication Critical patent/JP2007505501A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
JP2006526270A 2003-09-09 2004-09-08 フィールドプレートを有するワイドバンドギャップトランジスタデバイス Pending JP2007505501A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US50157603P 2003-09-09 2003-09-09
US10/930,160 US7501669B2 (en) 2003-09-09 2004-08-31 Wide bandgap transistor devices with field plates
PCT/US2004/029345 WO2005029589A1 (en) 2003-09-09 2004-09-08 Wide bandgap transistor devices with field plates

Publications (2)

Publication Number Publication Date
JP2007505501A true JP2007505501A (ja) 2007-03-08
JP2007505501A5 JP2007505501A5 (enExample) 2007-09-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006526270A Pending JP2007505501A (ja) 2003-09-09 2004-09-08 フィールドプレートを有するワイドバンドギャップトランジスタデバイス

Country Status (7)

Country Link
US (4) US7501669B2 (enExample)
EP (4) EP1665385B1 (enExample)
JP (1) JP2007505501A (enExample)
KR (1) KR101108300B1 (enExample)
CN (2) CN1938859B (enExample)
CA (1) CA2536030A1 (enExample)
WO (1) WO2005029589A1 (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
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JP2008535241A (ja) * 2005-04-01 2008-08-28 レイセオン・カンパニー 改善されたフィールドプレートを備える半導体デバイス
JP2009021362A (ja) * 2007-07-11 2009-01-29 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物電子デバイス、ｉｉｉ族窒化物電子デバイスのための積層体ウエハ、およびｉｉｉ族窒化物電子デバイスを作製する方法
JP2010538582A (ja) * 2007-09-07 2010-12-09 レイセオン カンパニー トランジスタ電力増幅器のための入力回路及びそのような回路を設計するための方法
JP2013503483A (ja) * 2009-08-28 2013-01-31 トランスフォーム インコーポレーテッド フィールドプレートを有する半導体デバイス
JP2013141000A (ja) * 2007-03-23 2013-07-18 Cree Inc 半導体デバイス
JP2014090037A (ja) * 2012-10-29 2014-05-15 Advanced Power Device Research Association 半導体装置
US9041064B2 (en) 2006-11-21 2015-05-26 Cree, Inc. High voltage GaN transistor
US9419124B2 (en) 2001-07-24 2016-08-16 Cree, Inc. Insulating gate AlGaN/GaN HEMT
US9935190B2 (en) 2014-07-21 2018-04-03 Transphorm Inc. Forming enhancement mode III-nitride devices
US10043898B2 (en) 2013-03-13 2018-08-07 Transphorm Inc. Enhancement-mode III-nitride devices
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
JP2023550828A (ja) * 2020-11-27 2023-12-05 華為技術有限公司 半導体デバイスおよびその製造方法

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