JP2008535241A - 改善されたフィールドプレートを備える半導体デバイス - Google Patents
改善されたフィールドプレートを備える半導体デバイス Download PDFInfo
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- JP2008535241A JP2008535241A JP2008504037A JP2008504037A JP2008535241A JP 2008535241 A JP2008535241 A JP 2008535241A JP 2008504037 A JP2008504037 A JP 2008504037A JP 2008504037 A JP2008504037 A JP 2008504037A JP 2008535241 A JP2008535241 A JP 2008535241A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 230000005669 field effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 7
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Condensed Matter Physics & Semiconductors (AREA)
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- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【選択図】 図6
Description
本発明の1つ又は複数の実施形態の詳細が、添付の図面及び以下の説明において述べられる。本発明の他の特徴、目的及び利点は、その説明及び図面、並びに特許請求の範囲から明らかになるであろう。
次に、図4を参照すると、第2のフォトレジストマスク38が、誘電体層18の残りの部分の上に形成される。図に示されるように、第2のマスク38は、内部に、ゲート金属コンタクト16の部分の上に、且つゲート金属コンタクト16のエッジ領域32の上に残された誘電体層18の部分30の上に配置される窓40を有する。
Claims (2)
- 電界効果トランジスタデバイスであって、
半導体とオーム接触しているソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極との間に配置されるゲート電極−フィールドプレート構造と
を備え、該ゲート電極−フィールドプレート構造は、
誘電体と、
前記半導体とショットキー接触している第1の金属と、
第2の金属と
を有し、該第2の金属は、
前記第1の金属の一部の上に配置されると共に電気的に接続される第1の部分と、
前記誘電体の一部によって前記第1の金属の第2の部分から分離され、且つ前記第1の金属のエッジを越えて、前記第2の金属のエッジまで延在する第2の部分と
を有し、前記第1の金属の前記エッジは、前記第2の金属の前記エッジよりも前記ドレイン電極から離れており、それによって、該電界効果トランジスタデバイスのためのフィールドプレートが設けられる、電界効果トランジスタデバイス。 - 電界効果トランジスタを形成するための方法であって、
半導体に接触しているソース金属コンタクト、ドレイン金属コンタクト及びゲート金属コンタクトを形成すること、
前記形成されたソース金属コンタクト、前記形成されたドレイン金属コンタクト及び前記形成されたゲート金属コンタクト上に誘電体層を形成すること、
前記誘電体層上に第1のマスクを形成することであって、該第1のマスクは内部に、前記誘電体層の一部の上に配置される窓を有し、それによって、前記誘電体層の下側にある部分が露出し、該誘電体層の該露出した部分は、前記ゲート金属コンタクトの一部の上に配置される、第1のマスクを形成すること、
前記第1のマスクにドライエッチングを適用することであって、それによって、前記窓によって露出している前記誘電体層の部分が除去され、前記ゲート金属コンタクトの前記一部が露出し、前記誘電体層の残りの部分が、前記ゲート金属コンタクトのエッジ領域上に残される、ドライエッチングを適用すること、
前記第1のマスクを除去すること、
前記誘電体層の前記残りの部分の上に第2のマスクを形成することであって、該第2のマスクは内部に、前記ゲート金属コンタクトの部分の上に、且つ該ゲート金属コンタクトの前記エッジ領域上に残された前記誘電体層の前記部分の上に配置される窓を有する、第2のマスクを形成すること、及び
前記第2のマスク内に前記窓を通じてフィールドプレート金属を形成すること
を含み、前記フィールドプレート金属は、前記ゲート金属コンタクトの前記露出した部分に電気的に接続され、前記エッジ領域上に残された前記誘電体層の前記部分によって前記ゲート金属コンタクトの前記エッジ領域から分離され、前記ドレイン金属コンタクトに向かって、該ゲート金属コンタクトの該エッジを越えて延在する、電界効果トランジスタを形成するための方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/096,512 US20060223293A1 (en) | 2005-04-01 | 2005-04-01 | Semiconductor devices having improved field plates |
US11/096,512 | 2005-04-01 | ||
PCT/US2006/004788 WO2006107404A2 (en) | 2005-04-01 | 2006-02-10 | Semiconductor devices having improved field plates |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008535241A true JP2008535241A (ja) | 2008-08-28 |
JP4988703B2 JP4988703B2 (ja) | 2012-08-01 |
Family
ID=36954741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008504037A Active JP4988703B2 (ja) | 2005-04-01 | 2006-02-10 | 改善されたフィールドプレートを備える半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060223293A1 (ja) |
EP (1) | EP1866967B1 (ja) |
JP (1) | JP4988703B2 (ja) |
KR (1) | KR101170730B1 (ja) |
TW (1) | TWI373843B (ja) |
WO (1) | WO2006107404A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8003504B2 (en) | 2006-09-01 | 2011-08-23 | Bae Systems Information And Electronic Systems Integration Inc. | Structure and method for fabrication of field effect transistor gates with or without field plates |
WO2009094570A2 (en) * | 2008-01-24 | 2009-07-30 | Applied Materials, Inc. | Plating through tunnel dielectrics for solar cell contact formation |
US20100186808A1 (en) * | 2009-01-27 | 2010-07-29 | Peter Borden | Plating through tunnel dielectrics for solar cell contact formation |
KR20190090231A (ko) * | 2018-01-24 | 2019-08-01 | (주)웨이비스 | 크랙이 없는 고신뢰성 필드 플레이트를 포함하는 고전자이동도 트랜지스터 및 이의 제조방법 |
Citations (2)
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US20040227204A1 (en) * | 2000-05-03 | 2004-11-18 | Linear Technology Corporation | High voltage MOS transistor with gate extension |
WO2005029589A1 (en) * | 2003-09-09 | 2005-03-31 | Cree, Inc. | Wide bandgap transistor devices with field plates |
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2005
- 2005-04-01 US US11/096,512 patent/US20060223293A1/en not_active Abandoned
-
2006
- 2006-02-10 WO PCT/US2006/004788 patent/WO2006107404A2/en active Application Filing
- 2006-02-10 EP EP06734772.4A patent/EP1866967B1/en active Active
- 2006-02-10 JP JP2008504037A patent/JP4988703B2/ja active Active
- 2006-02-10 KR KR1020077023136A patent/KR101170730B1/ko active IP Right Grant
- 2006-02-20 TW TW095105652A patent/TWI373843B/zh active
-
2007
- 2007-03-30 US US11/693,762 patent/US7498223B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040227204A1 (en) * | 2000-05-03 | 2004-11-18 | Linear Technology Corporation | High voltage MOS transistor with gate extension |
WO2005029589A1 (en) * | 2003-09-09 | 2005-03-31 | Cree, Inc. | Wide bandgap transistor devices with field plates |
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Publication number | Publication date |
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KR101170730B1 (ko) | 2012-08-03 |
WO2006107404A2 (en) | 2006-10-12 |
EP1866967B1 (en) | 2021-01-13 |
TW200727475A (en) | 2007-07-16 |
JP4988703B2 (ja) | 2012-08-01 |
KR20070116251A (ko) | 2007-12-07 |
US20070166888A1 (en) | 2007-07-19 |
WO2006107404A3 (en) | 2006-12-14 |
EP1866967A2 (en) | 2007-12-19 |
US20060223293A1 (en) | 2006-10-05 |
TWI373843B (en) | 2012-10-01 |
US7498223B2 (en) | 2009-03-03 |
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