JP2007505501A - フィールドプレートを有するワイドバンドギャップトランジスタデバイス - Google Patents
フィールドプレートを有するワイドバンドギャップトランジスタデバイス Download PDFInfo
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Abstract
Description
Claims (38)
- 基板上に形成された複数の活性半導体層と、
前記複数の活性層との電気的コンタクトで形成されたソースコンタクトと、
前記複数の活性層との電気的コンタクトで同様に形成されたドレインコンタクトであって、前記複数の活性層の最上部の上の前記ソースコンタクトと前記ドレインコンタクトとの間にスペースがあるドレインコンタクトと、
前記ソースコンタクトと前記ドレインコンタクトとの間の前記複数の活性層の前記最上部との電気的コンタクトで形成されたゲートと、
前記ゲートと前記ドレインコンタクトとの間の前記複数の活性層の最上部の表面に形成されたエピタキシャル材料のスペーサ層であって、前記ゲートは前記スペーサ層により覆われていないスペーサ層と、
前記スペーサ層の上に前記ゲートの一部として形成されたフィールドプレートと
を備えることを特徴とするトランジスタ。 - 前記フィールドプレートは、前記スペーサ層の上に前記ゲートの端から前記ドレインコンタクトに向かって距離Lf延びていることを特徴とする請求項1に記載のトランジスタ。
- 前記スペーサ層は、前記ゲートと前記ドレインコンタクトとの間にステップ配置で複数のスペーサ層を有することを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートは、前記スペーサ層ステップ配置の上に形成されて複数のフィールドプレートの部分を形成し、各部分は各部分と前記複数の活性層の最上部との間の距離が異なることを特徴とする請求項3に記載のトランジスタ。
- 高電子移動度トランジスタ(HEMT)を備える請求項1に記載のトランジスタであって、前記複数の活性層は、少なくとも、前記基板の上のバッファ層および前記バッファ層の上のバリア層を備え、二次元電子ガスは前記バッファ層と前記バリア層との間にあり、前期バリア層は前記複数の活性層の最上部であることを特徴とするトランジスタ。
- 前記HEMTは、ガリウム窒化物ベースであることを特徴とする請求項1に記載のトランジスタ。
- 前記バッファ層と前記基板との間に核生成層をさらに備える請求項5に記載のトランジスタ。
- 金属半導体接合FET(MESFET)を備える請求項1に記載のトランジスタであって、前記複数の活性層は、少なくとも、前記基板の上のバッファ層および前記バッファ層の上のチャネル層を備え、前記チャネル層は前記複数の活性層の最上部にあることを特徴とするトランジスタ。
- 前記MESFETは、シリコンカーバイドベースであることを特徴とする請求項8に記載のトランジスタ。
- 前記ゲートはガンマ型であることを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートは、前記フィールドプレートを有しない類似のトランジスタと比較してピーク動作電界の低減を提供することを特徴とする請求項1に記載のトランジスタ。
- 前記ゲートは、前記複数の活性層の前記最上部内に少なくとも部分的にリセス化されていることを特徴とする請求項1に記載のトランジスタ。
- 前記トランジスタのさらされた表面の少なくともいくらかを覆うパシベーション層をさらに備えることを特徴とする請求項1に記載のトランジスタ。
- 前記フィールドプレートおよび前記フィールドプレートと前記ドレインコンタクトとの間の前記スペーサ層の表面を覆う第2のスペーサ層をさらに備え、前期第2のスペーサ層の上の、前記ゲートの端から前記ドレインコンタクトに向かって延びている第2のフィールドプレートをさらに備えることを特徴とする請求項1に記載のトランジスタ。
- 前記スペーサ層および前記フィールドプレートの上に、少なくとも1つの追加のスペーサ層とフィールドプレートの対をさらに備えることを特徴とする請求項1に記載のトランジスタ。
- 基板上に形成された複数の活性半導体層と、
前記複数の活性層との電気的コンタクトで形成されたソースコンタクトと、
前記複数の活性層との電気的コンタクトで同様に形成されたドレインコンタクトであって、前記複数の活性層の最上部の上の前記ソースコンタクトと前記ドレインコンタクトとの間にスペースがあるドレインコンタクトと、
前記ソースコンタクトと前記ドレインコンタクトとの間の前記複数の活性層の前記最上部との電気的コンタクトで形成されたゲートと、
前記ゲートと前記ドレインコンタクトとの間の前記複数の活性層の最上部の表面に形成された、前記ゲートコンタクトを覆うスペーサ層と、
前記スペーサ層の上に形成され、前記ゲートに電気的に接続されているフィールドプレートと
を備えることを特徴とするトランジスタ。 - 前記フィールドプレートは、少なくとも部分的に前記ゲートオーバーラップし、前記スペーサ層の上を前記ドレインコンタクトに向かって延びていることを特徴とする請求項16に記載のトランジスタ。
- 前記ゲートと前記フィールドプレートとの間を前記スペーサ層を通って走っている1つまたは複数の導電性ビアをさらに備え、前記ビアは前記フィールドプレートに前記ゲートとの電気的接続を提供することを特徴とする請求項16に記載のトランジスタ。
- 前記フィールドプレートと前記ゲートとの間の1つまたは複数の導電性経路をさらに備え、前記経路のそれぞれは、前記スペーサ層の外を走っていて、前記フィールドプレートに前記ゲートとの電気的接続を提供することを特徴とする請求項16に記載のトランジスタ。
- 前記スペーサ層は、前記ゲートと前記ドレインコンタクトとの間のステップ配置の複数のスペーサ層を備えることを特徴とする請求項16に記載のトランジスタ。
- 前記フィールドプレートは前記スペーサ層ステップ配置の上に形成されて複数のフィールドプレートの部分を形成し、各部分は各部分と前記複数の活性層の最上部との間の距離が異なることを特徴とする請求項20に記載のトランジスタ。
- 高電子移動度トランジスタ(HEMT)を備える請求項16に記載のトランジスタであって、前記複数の活性層は、少なくとも、前記基板の上のバッファ層および前記バッファ層の上のバリア層を備え、二次元電子ガスは前記バッファ層と前記バリア層との間にあり、前記バリア層は前記複数の活性層の最上部であることを特徴とするトランジスタ。
- 前記HEMTは、ガリウム窒化物ベースであることを特徴とする請求項22に記載のトランジスタ。
- 前記バッファ層と前記基板との間に核生成層をさらに備える請求項22に記載のトランジスタ。
- 金属半導体接合FET(MESFET)を備える請求項16に記載のトランジスタであって、前記複数の活性層は、少なくとも、前記基板の上のバッファ層および前記バッファ層の上のチャネル層を備え、前記チャネル層は前記複数の活性層の最上部にあることを特徴とするトランジスタ。
- 前記MESFETは、シリコンカーバイドベースであることを特徴とする請求項25に記載のトランジスタ。
- 前記ゲートはガンマ型であることを特徴とする請求項16に記載のトランジスタ。
- 前記フィールドプレートは、前記フィールドプレートを有しない類似のトランジスタと比較してピーク動作電界の低減を提供することを特徴とする請求項16に記載のトランジスタ。
- 前記ゲートは、前記複数の活性層の前記最上部内に少なくとも部分的にリセス化されていることを特徴とする請求項1に記載のトランジスタ。
- 前記トランジスタのさらされた表面の少なくともいくらかを覆うパシベーション層をさらに備えることを特徴とする請求項16に記載のトランジスタ。
- 活性半導体層と、
前記活性層との電気的コンタクトで形成された金属のソースコンタクトおよびドレインコンタクトと、
前記活性層内の電界を変調するための前記ソースコンタクトと前記ドレインコンタクトとの間に形成されたゲートコンタクトと、
前記活性層の上に形成されたスペーサ層と、
前記スペーサ層の上に形成され、前記ゲートコンタクトの端から前記ドレインコンタクトに向かって距離Lf延びている、前記ゲートコンタクトに電気的に接続されている導電性フィールドプレートと
を備えることを特徴とするトランジスタ構造。 - 前記フィールドプレートは、前記フィールドプレートを有しない類似のトランジスタと比較してピーク動作電界の低減を提供することを特徴とする請求項31に記載のトランジスタ構造。
- 前記スペーサ層は、誘電体層、ドープされた又は空乏化したワイドバンドギャップ材料、またはそれらの組み合わせからなることを特徴とする請求項31に記載のトランジスタ構造。
- 活性半導体層と、
前記活性層との電気的コンタクトで形成された金属のソースコンタクトおよびドレインコンタクトと、
前記活性層内の電界を変調するための前記ソースコンタクトと前記ドレインコンタクトとの間に形成されたゲートコンタクトと、
前記活性半導体層の上の前記スペーサの上に形成され、前記ゲートコンタクトの端から前記ドレインコンタクトに向かって距離Lf延びている導電性フィールドプレートであって、前記ゲートコンタクトに電気的に接続されていて、前記フィールドプレートを有しない類似のトランジスタと比較して前記トランジスタ内のピーク動作電界の低減を提供するフィールドプレートと
を備えることを特徴とするトランジスタ。 - 基板の上に形成された複数の活性半導体層と、
前記複数の活性層との電気的コンタクトで形成されたソースコンタクトおよびドレインコンタクトと、
前記ソースコンタクトと前記ドレインコンタクトとの間の前記複数の活性層の前記最上部との電気的コンタクトで形成されたゲートと、
前記ゲートと前記ドレインコンタクトとの間の前記複数の活性層の前記最上部の表面に形成された第1のスペーサ層であって、前記ゲートは前記スペーサ層によって覆われていない第1のスペーサ層と、
前記ゲートの一部として前記スペーサ層の上に形成され、前記ドレインコンタクトに向かって前記スペーサ層の上を延びている第1のフィールドプレートと、
前記フィールドプレートおよび前記フィールドプレートと前記ドレインコンタクトとの間の前記スペーサ層の表面を覆っている第2のスペーサ層と
を備え、さらに、前記第2のスペーサ層の上にあり、前記ゲートの端から前記ドレインコンタクトに向かって延びている第2のフィールドプレートを備えることを特徴とするトランジスタ。 - 前記第1および第2のフィールドプレートは、前記ゲートに電気的に接続されている請求項1に記載のトランジスタ。
- 前記第2のスペーサ層および前記第2のフィールドプレートの上に、少なくとも1つの追加のスペーサ層とフィールドプレートの対をさらに備え、フィールドプレートのそれぞれは前記ゲートに電気的に接続されていることを特徴とする請求項1に記載のトランジスタ。
- 基板の上のバッファ層と、
前記バッファ層の上のチャネル層と、
前記チャネル層との電気的コンタクトで形成されたソースおよびドレインコンタクトと、
前記ソースコンタクトと前記ドレインコンタクトとの間に前記チャネル層との電気的コンタクトで形成されたゲートと、
少なくとも前記ゲートと前記ドレインコンタクトとの間の前記チャネル層の表面に形成されたスペーサ層と、
前記ゲートとの電気的コンタクトでスペーサ層の上に形成されたフィールドプレートと
を備えることを特徴とする金属半導体接合FET(MESFET)。
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Also Published As
Publication number | Publication date |
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EP1665385B1 (en) | 2020-11-11 |
CN1938859A (zh) | 2007-03-28 |
KR101108300B1 (ko) | 2012-01-25 |
US20050051796A1 (en) | 2005-03-10 |
US20090224288A1 (en) | 2009-09-10 |
EP2432021B1 (en) | 2021-06-09 |
CN102306658A (zh) | 2012-01-04 |
US20070235761A1 (en) | 2007-10-11 |
KR20060071415A (ko) | 2006-06-26 |
US9397173B2 (en) | 2016-07-19 |
CA2536030A1 (en) | 2005-03-31 |
WO2005029589A1 (en) | 2005-03-31 |
US7928475B2 (en) | 2011-04-19 |
EP2434546A1 (en) | 2012-03-28 |
US7501669B2 (en) | 2009-03-10 |
EP1665385A1 (en) | 2006-06-07 |
EP2432021A1 (en) | 2012-03-21 |
EP2437303A1 (en) | 2012-04-04 |
US20120132959A1 (en) | 2012-05-31 |
US8120064B2 (en) | 2012-02-21 |
CN1938859B (zh) | 2011-11-23 |
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