JP2007505501A5 - - Google Patents

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Publication number
JP2007505501A5
JP2007505501A5 JP2006526270A JP2006526270A JP2007505501A5 JP 2007505501 A5 JP2007505501 A5 JP 2007505501A5 JP 2006526270 A JP2006526270 A JP 2006526270A JP 2006526270 A JP2006526270 A JP 2006526270A JP 2007505501 A5 JP2007505501 A5 JP 2007505501A5
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JP
Japan
Prior art keywords
gate
spacer layer
field plate
transistor according
active layers
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Pending
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JP2006526270A
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English (en)
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JP2007505501A (ja
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Priority claimed from US10/930,160 external-priority patent/US7501669B2/en
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Publication of JP2007505501A publication Critical patent/JP2007505501A/ja
Publication of JP2007505501A5 publication Critical patent/JP2007505501A5/ja
Pending legal-status Critical Current

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Claims (10)

  1. 基板上に形成された複数の活性半導体層と、
    前記複数の活性層との電気的コンタクトで形成されたソースコンタクトと、
    前記複数の活性層との電気的コンタクトで同様に形成されたドレインコンタクトであって、前記複数の活性層の最上部の上の前記ソースコンタクトと前記ドレインコンタクトとの間にスペースがあるドレインコンタクトと、
    前記ソースコンタクトと前記ドレインコンタクトとの間の前記複数の活性層の前記最上部との電気的コンタクトで形成されたゲートと、
    前記ゲートと前記ドレインコンタクトとの間の前記複数の活性層の最上部の少なくとも一部の表面に形成されたスペーサ層と、
    前記スペーサ層の上に形成され、前記ゲートと電気的に接続されているフィールドプレートと
    を備えることを特徴とするトランジスタ。
  2. 前記スペーサ層は前記ゲートを少なくとも部分的に覆い、前記フィールドプレートは少なくとも部分的に前記ゲートとオーバーラップし、前記スペーサ層の上を前記ドレインコンタクトに向かって延びていることを特徴とする請求項１に記載のトランジスタ。
  3. 前記ゲートとフィールドプレートとの間をスペーサ層を通って走っている１つまたは複数の導電性ビアをさらに備え、前記ビアは前記フィールドプレートに前記ゲートとの電気的接続を提供することを特徴とする請求項２に記載のトランジスタ。
  4. 前記フィールドプレートと前記ゲートとの間の１つまたは複数の導電性経路をさらに備え、前記経路のそれぞれは前記スペーサ層の外を走り、前記フィールドプレートに前記ゲートとの電気的接続を提供することを特徴とする請求項１に記載のトランジスタ。
  5. 前記フィールドプレートは、前記ゲートの一部として前記スペーサ層の上に形成され、前記スペーサ層の上を前記ドレインコンタクトに向かって延びていることを特徴とする請求項１に記載のトランジスタ。
  6. 前記スペーサ層は、前記ゲートと前記ドレインコンタクトとの間にステップ配置の複数のスペーサ層を備えることを特徴とする請求項１に記載のトランジスタ。
  7. 前記フィールドプレートは、前記スペーサ層ステップ配置の上に形成されて複数のフィールドプレートの部分を形成し、各部分は各部分と前記複数の活性層の最上部との間の距離が異なることを特徴とする請求項６に記載のトランジスタ。
  8. ガリウム窒化物ベースの高電子移動度トランジスタ（ＨＥＭＴ）を備えることを特徴とする請求項１に記載のトランジスタ。
  9. シリコンカーバイドベースの金属半導体接合ＦＥＴ（ＭＥＳＦＥＴ）を備え、前記複数の活性層は、少なくとも前記基板の上のバッファ層および前記バッファ層の上のチャネル層を備え、前期チャネル層は前記複数の活性層の最上部であることを特徴とする請求項１に記載のトランジスタ。
  10. 前記ゲートはガンマ型であることを特徴とする請求項１に記載のトランジスタ。
JP2006526270A 2003-09-09 2004-09-08 フィールドプレートを有するワイドバンドギャップトランジスタデバイス Pending JP2007505501A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US50157603P 2003-09-09 2003-09-09
US10/930,160 US7501669B2 (en) 2003-09-09 2004-08-31 Wide bandgap transistor devices with field plates
PCT/US2004/029345 WO2005029589A1 (en) 2003-09-09 2004-09-08 Wide bandgap transistor devices with field plates

Publications (2)

Publication Number Publication Date
JP2007505501A JP2007505501A (ja) 2007-03-08
JP2007505501A5 true JP2007505501A5 (ja) 2007-09-06

Family

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JP2006526270A Pending JP2007505501A (ja) 2003-09-09 2004-09-08 フィールドプレートを有するワイドバンドギャップトランジスタデバイス

Country Status (7)

Country Link
US (4) US7501669B2 (ja)
EP (4) EP1665385B1 (ja)
JP (1) JP2007505501A (ja)
KR (1) KR101108300B1 (ja)
CN (2) CN1938859B (ja)
CA (1) CA2536030A1 (ja)
WO (1) WO2005029589A1 (ja)

Families Citing this family (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002357640A1 (en) * 2001-07-24 2003-04-22 Cree, Inc. Insulting gate algan/gan hemt
US7501669B2 (en) * 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7812369B2 (en) * 2003-09-09 2010-10-12 The Regents Of The University Of California Fabrication of single or multiple gate field plates
US7279697B2 (en) * 2003-12-05 2007-10-09 International Rectifier Corporation Field effect transistor with enhanced insulator structure
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US20060073621A1 (en) * 2004-10-01 2006-04-06 Palo Alto Research Center Incorporated Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layer
US9640649B2 (en) * 2004-12-30 2017-05-02 Infineon Technologies Americas Corp. III-nitride power semiconductor with a field relaxation feature
EP1843390B1 (en) * 2005-01-25 2011-11-09 Fujitsu Limited Semiconductor device provided with mis structure and method for manufacturing the same
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US20060223293A1 (en) 2005-04-01 2006-10-05 Raytheon Company Semiconductor devices having improved field plates
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US20060255377A1 (en) * 2005-05-12 2006-11-16 Der-Wei Tu Field effect transistor with novel field-plate structure
CN101238561B (zh) * 2005-06-10 2011-08-24 日本电气株式会社 场效应晶体管
JP4968068B2 (ja) * 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
US7548112B2 (en) * 2005-07-21 2009-06-16 Cree, Inc. Switch mode power amplifier using MIS-HEMT with field plate extension
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
JP4751150B2 (ja) 2005-08-31 2011-08-17 株式会社東芝 窒化物系半導体装置
TW200715570A (en) * 2005-09-07 2007-04-16 Cree Inc Robust transistors with fluorine treatment
JP2009509343A (ja) * 2005-09-16 2009-03-05 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｎ極窒化アルミニウムガリウム／窒化ガリウムエンハンスメントモード電界効果トランジスタ
US20070138515A1 (en) * 2005-12-19 2007-06-21 M/A-Com, Inc. Dual field plate MESFET
WO2007081807A2 (en) * 2006-01-09 2007-07-19 International Rectifier Corporation Iii-nitride power semiconductor with a field relaxation feature
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) * 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US8264003B2 (en) * 2006-03-20 2012-09-11 International Rectifier Corporation Merged cascode transistor
US7408208B2 (en) 2006-03-20 2008-08-05 International Rectifier Corporation III-nitride power semiconductor device
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
KR100770132B1 (ko) * 2006-10-30 2007-10-24 페어차일드코리아반도체 주식회사 질화물계 반도체 소자
JP5105160B2 (ja) * 2006-11-13 2012-12-19 クリー インコーポレイテッド トランジスタ
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
JP4712683B2 (ja) * 2006-12-21 2011-06-29 パナソニック株式会社 トランジスタおよびその製造方法
US7838904B2 (en) * 2007-01-31 2010-11-23 Panasonic Corporation Nitride based semiconductor device with concave gate region
JP4691060B2 (ja) * 2007-03-23 2011-06-01 古河電気工業株式会社 ＧａＮ系半導体素子
US8212290B2 (en) * 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
JP5266679B2 (ja) * 2007-07-11 2013-08-21 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
US7609115B2 (en) * 2007-09-07 2009-10-27 Raytheon Company Input circuitry for transistor power amplifier and method for designing such circuitry
US7915643B2 (en) 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
US7800132B2 (en) * 2007-10-25 2010-09-21 Northrop Grumman Systems Corporation High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
WO2009073866A1 (en) * 2007-12-07 2009-06-11 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Gate after diamond transistor
US7750370B2 (en) * 2007-12-20 2010-07-06 Northrop Grumman Space & Mission Systems Corp. High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
JP5134378B2 (ja) * 2008-01-07 2013-01-30 シャープ株式会社 電界効果トランジスタ
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
CN101604704B (zh) * 2008-06-13 2012-09-05 西安能讯微电子有限公司 Hemt器件及其制造方法
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
JP5408929B2 (ja) 2008-08-21 2014-02-05 昭和電工株式会社 半導体装置および半導体装置の製造方法
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US7884394B2 (en) * 2009-02-09 2011-02-08 Transphorm Inc. III-nitride devices and circuits
US8823012B2 (en) * 2009-04-08 2014-09-02 Efficient Power Conversion Corporation Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
JP5595685B2 (ja) * 2009-07-28 2014-09-24 パナソニック株式会社 半導体装置
US8390000B2 (en) * 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8138529B2 (en) 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
JP5625336B2 (ja) * 2009-11-30 2014-11-19 サンケン電気株式会社 半導体装置
JP5037594B2 (ja) * 2009-12-08 2012-09-26 シャープ株式会社 電界効果トランジスタ
US8389977B2 (en) * 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8816497B2 (en) * 2010-01-08 2014-08-26 Transphorm Inc. Electronic devices and components for high efficiency power circuits
US8624662B2 (en) 2010-02-05 2014-01-07 Transphorm Inc. Semiconductor electronic components and circuits
US20110241020A1 (en) * 2010-03-31 2011-10-06 Triquint Semiconductor, Inc. High electron mobility transistor with recessed barrier layer
US8907350B2 (en) 2010-04-28 2014-12-09 Cree, Inc. Semiconductor devices having improved adhesion and methods of fabricating the same
EP2383786B1 (en) 2010-04-29 2018-08-15 Ampleon Netherlands B.V. Semiconductor transistor comprising two electrically conductive shield elements
US8829999B2 (en) 2010-05-20 2014-09-09 Cree, Inc. Low noise amplifiers including group III nitride based high electron mobility transistors
JP2011249728A (ja) * 2010-05-31 2011-12-08 Toshiba Corp 半導体装置および半導体装置の製造方法
CN103026491B (zh) * 2010-07-06 2016-03-02 香港科技大学 常关断型三族氮化物金属-二维电子气隧穿结场效应晶体管
JP5655424B2 (ja) * 2010-08-09 2015-01-21 サンケン電気株式会社 化合物半導体装置
JP2012109492A (ja) * 2010-11-19 2012-06-07 Sanken Electric Co Ltd 化合物半導体装置
JP5707903B2 (ja) * 2010-12-02 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8803232B2 (en) 2011-05-29 2014-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8772833B2 (en) * 2011-09-21 2014-07-08 Electronics And Telecommunications Research Institute Power semiconductor device and fabrication method thereof
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US20130105817A1 (en) 2011-10-26 2013-05-02 Triquint Semiconductor, Inc. High electron mobility transistor structure and method
US8884308B2 (en) * 2011-11-29 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor structure with improved breakdown voltage performance
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
JP2013131650A (ja) * 2011-12-21 2013-07-04 Fujitsu Ltd 半導体装置及びその製造方法
US10002957B2 (en) 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
DE102013202972B4 (de) * 2012-02-23 2020-07-30 Efficient Power Conversion Corporation Anreicherungsbetrieb einer GaN-HEMT-Vorrichtung mit einem GATE-Abstandshalter sowie Verfahren zu deren Herstellung
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9443941B2 (en) * 2012-06-04 2016-09-13 Infineon Technologies Austria Ag Compound semiconductor transistor with self aligned gate
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
WO2014050054A1 (ja) * 2012-09-28 2014-04-03 パナソニック株式会社 半導体装置
JP6085442B2 (ja) * 2012-09-28 2017-02-22 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP2014090037A (ja) 2012-10-29 2014-05-15 Advanced Power Device Research Association 半導体装置
WO2014127150A1 (en) 2013-02-15 2014-08-21 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9048184B2 (en) * 2013-03-15 2015-06-02 Northrop Grumman Systems Corporation Method of forming a gate contact
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9059076B2 (en) 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
US9202880B1 (en) 2013-04-23 2015-12-01 Hrl Laboratories, Llc Etch-based fabrication process for stepped field-plate wide-bandgap
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9407214B2 (en) 2013-06-28 2016-08-02 Cree, Inc. MMIC power amplifier
WO2015006111A1 (en) 2013-07-09 2015-01-15 Transphorm Inc. Multilevel inverters and their components
US9455341B2 (en) * 2013-07-17 2016-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having a back-barrier layer and method of making the same
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
TWI555209B (zh) * 2013-07-29 2016-10-21 高效電源轉換公司 具有降低的輸出電容之氮化鎵裝置及其製法
US10566429B2 (en) * 2013-08-01 2020-02-18 Dynax Semiconductor, Inc. Semiconductor device and method of manufacturing the same
US10236236B2 (en) 2013-09-10 2019-03-19 Delta Electronics, Inc. Heterojunction semiconductor device for reducing parasitic capacitance
US10910491B2 (en) 2013-09-10 2021-02-02 Delta Electronics, Inc. Semiconductor device having reduced capacitance between source and drain pads
US10833185B2 (en) 2013-09-10 2020-11-10 Delta Electronics, Inc. Heterojunction semiconductor device having source and drain pads with improved current crowding
TWI577022B (zh) 2014-02-27 2017-04-01 台達電子工業股份有限公司 半導體裝置與應用其之半導體裝置封裝體
US10665709B2 (en) 2013-09-10 2020-05-26 Delta Electronics, Inc. Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
KR102100928B1 (ko) * 2013-10-17 2020-05-15 삼성전자주식회사 고전자 이동도 트랜지스터
JP2015177016A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置
US8980759B1 (en) 2014-05-22 2015-03-17 Hrl Laboratories, Llc Method of fabricating slanted field-plate GaN heterojunction field-effect transistor
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
CN106575670B (zh) 2014-09-18 2020-10-16 英特尔公司 用于硅cmos相容半导体器件中的缺陷扩展控制的具有倾斜侧壁刻面的纤锌矿异质外延结构
CN106796952B (zh) 2014-09-25 2020-11-06 英特尔公司 独立式硅台面上的ⅲ-n族外延器件结构
US9608078B2 (en) 2014-10-17 2017-03-28 Cree, Inc. Semiconductor device with improved field plate
US9640623B2 (en) 2014-10-17 2017-05-02 Cree, Inc. Semiconductor device with improved field plate
EP3213350A4 (en) * 2014-10-30 2018-06-13 Intel Corporation Source/drain regrowth for low contact resistance to 2d electron gas in gallium nitride transistors
US9590087B2 (en) 2014-11-13 2017-03-07 Infineon Technologies Austria Ag Compound gated semiconductor device having semiconductor field plate
US9559161B2 (en) * 2014-11-13 2017-01-31 Infineon Technologies Austria Ag Patterned back-barrier for III-nitride semiconductor devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
CN106922200B (zh) 2014-12-18 2021-11-09 英特尔公司 N沟道氮化镓晶体管
JP2016171162A (ja) * 2015-03-12 2016-09-23 株式会社東芝 半導体装置
US10200030B2 (en) 2015-03-13 2019-02-05 Transphorm Inc. Paralleling of switching devices for high power circuits
CN104882483B (zh) * 2015-05-05 2018-06-26 西安电子科技大学 具有γ栅和凹陷缓冲层的场效应晶体管及其制备方法
CN104916684B (zh) * 2015-06-11 2018-04-27 大连理工大学 一种纵向短开启栅极沟道型hemt器件及其制备方法
WO2017015225A1 (en) * 2015-07-17 2017-01-26 Cambridge Electronics, Inc. Field-plate structures for semiconductor devices
US10553689B2 (en) 2015-12-23 2020-02-04 Intel Corporation Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
CN109196650B (zh) * 2016-06-01 2022-04-29 宜普电源转换公司 多台阶表面钝化结构及其制造方法
DE102016122399A1 (de) * 2016-11-21 2018-05-24 Forschungsverbund Berlin E.V. Gate-Struktur und Verfahren zu dessen Herstellung
DE102016123931A1 (de) 2016-12-09 2018-06-14 United Monolithic Semiconductors Gmbh Transistor
DE102016123934A1 (de) 2016-12-09 2018-06-14 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines Transistors
CN107134491B (zh) * 2017-03-29 2019-11-29 西安电子科技大学 基于弧形源场板的垂直结构电力电子器件
CN107134490B (zh) * 2017-03-29 2020-04-14 西安电子科技大学 基于弧形源场板和弧形漏场板的垂直型功率器件及其制作方法
CN107068740B (zh) * 2017-03-29 2019-12-03 西安电子科技大学 源阶梯场板垂直型功率晶体管
CN107170820B (zh) * 2017-03-29 2020-04-14 西安电子科技大学 弧形栅-漏复合场板电流孔径异质结器件
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
WO2019066953A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING SAME
US10326002B1 (en) * 2018-06-11 2019-06-18 Globalfoundries Inc. Self-aligned gate contact and cross-coupling contact formation
FR3088485B1 (fr) * 2018-11-13 2021-04-30 Commissariat Energie Atomique Dispositif semi-conducteur a plaque de champ
CN109887836B (zh) * 2019-01-25 2021-03-02 西安交通大学 n型掺杂单晶金刚石场板结构的场效应晶体管的制备方法
US11121245B2 (en) 2019-02-22 2021-09-14 Efficient Power Conversion Corporation Field plate structures with patterned surface passivation layers and methods for manufacturing thereof
CN110010682B (zh) * 2019-03-22 2024-08-02 华南理工大学 具有三明治结构的GaN-HEMT器件及其制备方法
US10971612B2 (en) 2019-06-13 2021-04-06 Cree, Inc. High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
CN110581170A (zh) * 2019-08-13 2019-12-17 中山市华南理工大学现代产业技术研究院 具有Г型栅的GaN基MIS-HEMT器件及制备方法
US12032014B2 (en) 2019-09-09 2024-07-09 Analog Devices International Unlimited Company Semiconductor device configured for gate dielectric monitoring
US11862691B2 (en) 2019-11-01 2024-01-02 Raytheon Company Field effect transistor having field plate
US11552190B2 (en) * 2019-12-12 2023-01-10 Analog Devices International Unlimited Company High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region
CN113875019B (zh) * 2020-04-30 2024-07-02 英诺赛科(苏州)半导体有限公司 半导体器件以及制造半导体器件的方法
US11769768B2 (en) 2020-06-01 2023-09-26 Wolfspeed, Inc. Methods for pillar connection on frontside and passive device integration on backside of die
US11228287B2 (en) 2020-06-17 2022-01-18 Cree, Inc. Multi-stage decoupling networks integrated with on-package impedance matching networks for RF power amplifiers
US11533025B2 (en) 2020-06-18 2022-12-20 Wolfspeed, Inc. Integrated doherty amplifier with added isolation between the carrier and the peaking transistors
US11581859B2 (en) 2020-06-26 2023-02-14 Wolfspeed, Inc. Radio frequency (RF) transistor amplifier packages with improved isolation and lead configurations
US11887945B2 (en) 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures
US11749726B2 (en) 2020-10-27 2023-09-05 Wolfspeed, Inc. Field effect transistor with source-connected field plate
US11658234B2 (en) 2020-10-27 2023-05-23 Wolfspeed, Inc. Field effect transistor with enhanced reliability
US11502178B2 (en) 2020-10-27 2022-11-15 Wolfspeed, Inc. Field effect transistor with at least partially recessed field plate
US12100630B2 (en) 2020-11-13 2024-09-24 Macom Technology Solutions Holdings, Inc. Packaged RF power device with PCB routing outside protective member
US12046593B2 (en) 2020-12-25 2024-07-23 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and manufacturing method thereof
US11869887B2 (en) 2020-12-25 2024-01-09 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and manufacturing method thereof
US11929406B2 (en) * 2021-02-19 2024-03-12 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
CN113053749B (zh) * 2021-03-12 2022-06-21 浙江大学 GaN器件及制备方法
WO2022212327A1 (en) * 2021-03-31 2022-10-06 Massachusetts Institute Of Technology Semiconductor device with electric field management structures
US12009417B2 (en) 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance
US12015075B2 (en) 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
US20220376104A1 (en) 2021-05-20 2022-11-24 Cree, Inc. Transistors including semiconductor surface modification and related fabrication methods
US11869964B2 (en) 2021-05-20 2024-01-09 Wolfspeed, Inc. Field effect transistors with modified access regions
US11842937B2 (en) 2021-07-30 2023-12-12 Wolfspeed, Inc. Encapsulation stack for improved humidity performance and related fabrication methods
CN117716496A (zh) * 2021-08-03 2024-03-15 新唐科技日本株式会社 可变电容元件
US11621672B2 (en) 2021-08-05 2023-04-04 Wolfspeed, Inc. Compensation of trapping in field effect transistors
US20230075505A1 (en) 2021-09-03 2023-03-09 Wolfspeed, Inc. Metal pillar connection topologies for heterogeneous packaging
US20230078017A1 (en) 2021-09-16 2023-03-16 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
US12113114B2 (en) 2021-10-22 2024-10-08 Wolfspeed, Inc. Transistor with ohmic contacts
WO2024037906A1 (en) * 2022-08-15 2024-02-22 Signify Holding B.V. Half bridge switch node shielded from input voltage and ground
US20240105824A1 (en) 2022-09-23 2024-03-28 Wolfspeed, Inc. Barrier Structure for Sub-100 Nanometer Gate Length Devices
US20240105823A1 (en) 2022-09-23 2024-03-28 Wolfspeed, Inc. Barrier Structure for Dispersion Reduction in Transistor Devices
US20240106397A1 (en) 2022-09-23 2024-03-28 Wolfspeed, Inc. Transistor amplifier with pcb routing and surface mounted transistor die
US20240120202A1 (en) 2022-10-06 2024-04-11 Wolfspeed, Inc. Implanted Regions for Semiconductor Structures with Deep Buried Layers
US20240266419A1 (en) 2023-02-03 2024-08-08 Wolfspeed, Inc. Semiconductor Device Having Semiconductor Structure with Polarity Inverting Layer
US20240266426A1 (en) 2023-02-03 2024-08-08 Wolfspeed, Inc. Semiconductor Structure for Improved Radio Frequency Thermal Management
US20240304702A1 (en) 2023-03-06 2024-09-12 Wolfspeed, Inc. Field Reducing Structures for Nitrogen-Polar Group III-Nitride Semiconductor Devices
CN118099209A (zh) * 2024-04-28 2024-05-28 英诺赛科(苏州)半导体有限公司 一种GaN功率器件及其制备方法

Family Cites Families (167)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187552A (en) 1979-03-28 1993-02-16 Hendrickson Thomas E Shielded field-effect transistor devices
US4947232A (en) 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
NL8103218A (nl) 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
US4551905A (en) * 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
JPS59104706U (ja) 1982-12-29 1984-07-14 オカモト株式会社 手袋成形型
JPS62237763A (ja) 1986-04-08 1987-10-17 Agency Of Ind Science & Technol 半導体装置の製造方法
JPH0514463Y2 (ja) 1986-11-27 1993-04-16
US5196359A (en) 1988-06-30 1993-03-23 Texas Instruments Incorporated Method of forming heterostructure field effect transistor
JPH0738108B2 (ja) 1988-11-28 1995-04-26 ヤマハ株式会社 電子楽器の楽音制御方法
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JPH0750413Y2 (ja) 1991-02-25 1995-11-15 石川島播磨重工業株式会社 フラップ式保安ゲート
EP0576566B1 (en) 1991-03-18 1999-05-26 Trustees Of Boston University A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JPH0521793A (ja) 1991-07-09 1993-01-29 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH06204253A (ja) 1993-01-07 1994-07-22 Fujitsu Ltd 電界効果半導体装置
JPH06224225A (ja) 1993-01-27 1994-08-12 Fujitsu Ltd 電界効果半導体装置
JP3188346B2 (ja) 1993-06-10 2001-07-16 ローム株式会社 電界効果トランジスタ
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JP2658860B2 (ja) 1993-12-20 1997-09-30 日本電気株式会社 半導体装置およびその製造方法
JPH0864519A (ja) 1994-08-08 1996-03-08 Korea Electron Telecommun Ｔ字形のゲートの形成のためのフォトマスクおよびその製造方法
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP3051817B2 (ja) 1995-01-31 2000-06-12 シャープ株式会社 半導体装置の製造方法
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6002148A (en) * 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
US5569937A (en) 1995-08-28 1996-10-29 Motorola High breakdown voltage silicon carbide transistor
KR0167273B1 (ko) 1995-12-02 1998-12-15 문정환 고전압 모스전계효과트렌지스터의 구조 및 그 제조방법
US6566709B2 (en) * 1996-01-22 2003-05-20 Fuji Electric Co., Ltd. Semiconductor device
TW360982B (en) 1996-01-26 1999-06-11 Matsushita Electric Works Ltd Thin film transistor of silicon-on-insulator type
JPH09232827A (ja) 1996-02-21 1997-09-05 Oki Electric Ind Co Ltd 半導体装置及び送受信切り替え型アンテナスイッチ回路
US5652179A (en) 1996-04-24 1997-07-29 Watkins-Johnson Company Method of fabricating sub-micron gate electrode by angle and direct evaporation
US5710455A (en) 1996-07-29 1998-01-20 Motorola Lateral MOSFET with modified field plates and damage areas
KR100571071B1 (ko) 1996-12-04 2006-06-21 소니 가부시끼 가이샤 전계효과트랜지스터및그제조방법
JP3958404B2 (ja) 1997-06-06 2007-08-15 三菱電機株式会社 横型高耐圧素子を有する半導体装置
JPH118256A (ja) 1997-06-13 1999-01-12 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
JP4028897B2 (ja) * 1997-07-24 2007-12-26 三菱電機株式会社 電界効果半導体装置
TW334632B (en) 1997-07-24 1998-06-21 Mitsubishi Electric Corp Field effective semiconductor
JP3457511B2 (ja) 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
US5898198A (en) 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
US6346451B1 (en) * 1997-12-24 2002-02-12 Philips Electronics North America Corporation Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
DE19800647C1 (de) 1998-01-09 1999-05-27 Siemens Ag SOI-Hochspannungsschalter
JP3127874B2 (ja) 1998-02-12 2001-01-29 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3233207B2 (ja) 1998-03-20 2001-11-26 日本電気株式会社 電界効果トランジスタの製造方法
JP3534624B2 (ja) 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3111985B2 (ja) * 1998-06-16 2000-11-27 日本電気株式会社 電界効果型トランジスタ
JP2000082671A (ja) 1998-06-26 2000-03-21 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法
US6042975A (en) 1998-07-08 2000-03-28 Lucent Technologies Inc. Alignment techniques for photolithography utilizing multiple photoresist layers
DE19835454A1 (de) * 1998-08-05 2000-02-10 Aventis Res & Tech Gmbh & Co Geschütztes supraleitendes Bauteil und Verfahren zu dessen Herstellung
US6100549A (en) 1998-08-12 2000-08-08 Motorola, Inc. High breakdown voltage resurf HFET
JP3180776B2 (ja) 1998-09-22 2001-06-25 日本電気株式会社 電界効果型トランジスタ
JP2000164926A (ja) 1998-11-24 2000-06-16 Sony Corp 化合物半導体の選択エッチング方法、窒化物系化合物半導体の選択エッチング方法、半導体装置および半導体装置の製造方法
US6495409B1 (en) 1999-01-26 2002-12-17 Agere Systems Inc. MOS transistor having aluminum nitride gate structure and method of manufacturing same
JP3497406B2 (ja) 1999-03-25 2004-02-16 株式会社クボタ 水田作業機
US6127703A (en) * 1999-08-31 2000-10-03 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region
JP2001160656A (ja) 1999-12-01 2001-06-12 Sharp Corp 窒化物系化合物半導体装置
US6639255B2 (en) 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP4592938B2 (ja) * 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
JP2001189324A (ja) 1999-12-28 2001-07-10 Ricoh Co Ltd 半導体装置
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP4186032B2 (ja) * 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
TWI257179B (en) 2000-07-17 2006-06-21 Fujitsu Quantum Devices Ltd High-speed compound semiconductor device operable at large output power with minimum leakage current
JP4198339B2 (ja) 2000-07-17 2008-12-17 ユーディナデバイス株式会社 化合物半導体装置
US6624488B1 (en) 2000-08-07 2003-09-23 Advanced Micro Devices, Inc. Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices
JP4322414B2 (ja) 2000-09-19 2009-09-02 株式会社ルネサステクノロジ 半導体装置
US6690042B2 (en) 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
JP2002118122A (ja) 2000-10-06 2002-04-19 Nec Corp ショットキゲート電界効果トランジスタ
US6891235B1 (en) 2000-11-15 2005-05-10 International Business Machines Corporation FET with T-shaped gate
TWI288435B (en) 2000-11-21 2007-10-11 Matsushita Electric Ind Co Ltd Semiconductor device and equipment for communication system
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP2001230263A (ja) 2001-01-29 2001-08-24 Nec Corp 電界効果型トランジスタ
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6468878B1 (en) * 2001-02-27 2002-10-22 Koninklijke Philips Electronics N.V. SOI LDMOS structure with improved switching characteristics
US6455409B1 (en) * 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Damascene processing using a silicon carbide hard mask
JP2002270830A (ja) 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
US7622322B2 (en) 2001-03-23 2009-11-24 Cornell Research Foundation, Inc. Method of forming an AlN coated heterojunction field effect transistor
GB0107408D0 (en) 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
JP4220683B2 (ja) * 2001-03-27 2009-02-04 パナソニック株式会社 半導体装置
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
JP3744381B2 (ja) 2001-05-17 2006-02-08 日本電気株式会社 電界効果型トランジスタ
US6475857B1 (en) 2001-06-21 2002-11-05 Samsung Electronics Co., Ltd. Method of making a scalable two transistor memory device
AU2002357640A1 (en) 2001-07-24 2003-04-22 Cree, Inc. Insulting gate algan/gan hemt
GB0122122D0 (en) 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
JP2003100775A (ja) 2001-09-20 2003-04-04 Nec Compound Semiconductor Devices Ltd 半導体装置およびその製造方法
JP2003174039A (ja) 2001-09-27 2003-06-20 Murata Mfg Co Ltd ヘテロ接合電界効果トランジスタ
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
WO2003038905A2 (en) 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor
KR100445904B1 (ko) 2001-12-12 2004-08-25 한국전자통신연구원 소스 필드 플레이트를 갖는 드레인 확장형 모스 전계 효과트랜지스터 및그 제조방법
JP2003188189A (ja) 2001-12-20 2003-07-04 Nec Compound Semiconductor Devices Ltd 半導体装置の製造方法
KR100438895B1 (ko) * 2001-12-28 2004-07-02 한국전자통신연구원 고전자 이동도 트랜지스터 전력 소자 및 그 제조 방법
JP2003203930A (ja) * 2002-01-08 2003-07-18 Nec Compound Semiconductor Devices Ltd ショットキーゲート電界効果型トランジスタ
JP2003203923A (ja) 2002-01-10 2003-07-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
GB0202437D0 (en) 2002-02-02 2002-03-20 Koninkl Philips Electronics Nv Cellular mosfet devices and their manufacture
JP4251811B2 (ja) 2002-02-07 2009-04-08 富士通マイクロエレクトロニクス株式会社 相関二重サンプリング回路とこの相関二重サンプリング回路を備えたｃｍｏｓイメージセンサ
DE10206739C1 (de) 2002-02-18 2003-08-21 Infineon Technologies Ag Transistorbauelement
JP3908572B2 (ja) 2002-03-18 2007-04-25 株式会社東芝 半導体素子
JP3705431B2 (ja) 2002-03-28 2005-10-12 ユーディナデバイス株式会社 半導体装置及びその製造方法
JP3723780B2 (ja) 2002-03-29 2005-12-07 ユーディナデバイス株式会社 半導体装置及びその製造方法
US6559513B1 (en) 2002-04-22 2003-05-06 M/A-Com, Inc. Field-plate MESFET
DE10304722A1 (de) 2002-05-11 2004-08-19 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
US6740535B2 (en) 2002-07-29 2004-05-25 International Business Machines Corporation Enhanced T-gate structure for modulation doped field effect transistors
US6870219B2 (en) 2002-07-31 2005-03-22 Motorola, Inc. Field effect transistor and method of manufacturing same
US6838325B2 (en) 2002-10-24 2005-01-04 Raytheon Company Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor
US8089097B2 (en) 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
JP4077731B2 (ja) 2003-01-27 2008-04-23 富士通株式会社 化合物半導体装置およびその製造方法
CN100388509C (zh) 2003-01-29 2008-05-14 株式会社东芝 功率半导体器件
US6933544B2 (en) 2003-01-29 2005-08-23 Kabushiki Kaisha Toshiba Power semiconductor device
JP3940699B2 (ja) 2003-05-16 2007-07-04 株式会社東芝 電力用半導体素子
US7126426B2 (en) 2003-09-09 2006-10-24 Cree, Inc. Cascode amplifier structures including wide bandgap field effect transistor with field plates
US7812369B2 (en) 2003-09-09 2010-10-12 The Regents Of The University Of California Fabrication of single or multiple gate field plates
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
JP4417677B2 (ja) 2003-09-19 2010-02-17 株式会社東芝 電力用半導体装置
US7488992B2 (en) 2003-12-04 2009-02-10 Lockheed Martin Corporation Electronic device comprising enhancement mode pHEMT devices, depletion mode pHEMT devices, and power pHEMT devices on a single substrate and method of creation
US7071498B2 (en) 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
JP4041075B2 (ja) 2004-02-27 2008-01-30 株式会社東芝 半導体装置
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP2005340417A (ja) 2004-05-26 2005-12-08 Mitsubishi Electric Corp ヘテロ接合電界効果型半導体装置
JP2006032552A (ja) 2004-07-14 2006-02-02 Toshiba Corp 窒化物含有半導体装置
US7229903B2 (en) 2004-08-25 2007-06-12 Freescale Semiconductor, Inc. Recessed semiconductor device
US7312481B2 (en) 2004-10-01 2007-12-25 Texas Instruments Incorporated Reliable high-voltage junction field effect transistor and method of manufacture therefor
JP2006114652A (ja) 2004-10-14 2006-04-27 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
US7456443B2 (en) 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7709859B2 (en) 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7161194B2 (en) 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP4968068B2 (ja) 2005-06-10 2012-07-04 日本電気株式会社 電界効果トランジスタ
CN101238561B (zh) 2005-06-10 2011-08-24 日本电气株式会社 场效应晶体管
US7385273B2 (en) 2005-06-10 2008-06-10 International Rectifier Corporation Power semiconductor device
CN1321340C (zh) 2005-09-01 2007-06-13 上海交通大学 基于面阵投影的同步扫描双目视觉三维成像的方法
US7679111B2 (en) 2005-09-16 2010-03-16 International Rectifier Corporation Termination structure for a power semiconductor device
JP2007150282A (ja) 2005-11-02 2007-06-14 Sharp Corp 電界効果トランジスタ
US7566918B2 (en) 2006-02-23 2009-07-28 Cree, Inc. Nitride based transistors for millimeter wave operation
JP5307973B2 (ja) 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US7388236B2 (en) 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
US7629627B2 (en) 2006-04-18 2009-12-08 University Of Massachusetts Field effect transistor with independently biased gates
JP5065616B2 (ja) 2006-04-21 2012-11-07 株式会社東芝 窒化物半導体素子
JP5036233B2 (ja) 2006-07-06 2012-09-26 シャープ株式会社 半導体スイッチング素子および半導体回路装置
JP4304198B2 (ja) 2006-09-15 2009-07-29 株式会社東芝 半導体装置
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US8502323B2 (en) 2007-08-03 2013-08-06 The Hong Kong University Of Science And Technology Reliable normally-off III-nitride active device structures, and related methods and systems
US7915643B2 (en) 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US7884394B2 (en) 2009-02-09 2011-02-08 Transphorm Inc. III-nitride devices and circuits
JP5481103B2 (ja) 2009-06-11 2014-04-23 株式会社東芝 窒化物半導体素子
US20110241020A1 (en) 2010-03-31 2011-10-06 Triquint Semiconductor, Inc. High electron mobility transistor with recessed barrier layer
JP5548909B2 (ja) 2010-04-23 2014-07-16 古河電気工業株式会社 窒化物系半導体装置
JP5688556B2 (ja) 2010-05-25 2015-03-25 パナソニックＩｐマネジメント株式会社 電界効果トランジスタ
US20120175679A1 (en) 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5874173B2 (ja) 2011-02-25 2016-03-02 富士通株式会社 化合物半導体装置及びその製造方法
JP5343100B2 (ja) 2011-03-17 2013-11-13 株式会社東芝 窒化物半導体装置
US9024357B2 (en) 2011-04-15 2015-05-05 Stmicroelectronics S.R.L. Method for manufacturing a HEMT transistor and corresponding HEMT transistor
US8610173B2 (en) 2011-08-01 2013-12-17 Selex Sistemi Integrati S.P.A. Enhancement/depletion PHEMT device
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
JP5591776B2 (ja) 2011-09-21 2014-09-17 株式会社東芝 窒化物半導体装置およびそれを用いた回路
JP5908692B2 (ja) 2011-09-29 2016-04-26 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP2013157407A (ja) 2012-01-27 2013-08-15 Fujitsu Semiconductor Ltd 化合物半導体装置及びその製造方法
US8975664B2 (en) 2012-06-27 2015-03-10 Triquint Semiconductor, Inc. Group III-nitride transistor using a regrown structure
US9024324B2 (en) 2012-09-05 2015-05-05 Freescale Semiconductor, Inc. GaN dual field plate device with single field plate metal
JP5949527B2 (ja) 2012-12-21 2016-07-06 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
US8946779B2 (en) 2013-02-26 2015-02-03 Freescale Semiconductor, Inc. MISHFET and Schottky device integration
US9425267B2 (en) 2013-03-14 2016-08-23 Freescale Semiconductor, Inc. Transistor with charge enhanced field plate structure and method
JP6220161B2 (ja) 2013-06-03 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers

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