JP5307973B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5307973B2 JP5307973B2 JP2006048373A JP2006048373A JP5307973B2 JP 5307973 B2 JP5307973 B2 JP 5307973B2 JP 2006048373 A JP2006048373 A JP 2006048373A JP 2006048373 A JP2006048373 A JP 2006048373A JP 5307973 B2 JP5307973 B2 JP 5307973B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate electrode
- drift layer
- field plate
- drift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000013078 crystal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 abstract description 24
- 230000005684 electric field Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 147
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 20
- 229910052796 boron Inorganic materials 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Description
そこで、本実施の形態では、図10に示すように、第1のドリフト層65を電界集中が生じやすいゲート電極54の左端E1から離して形成した。第1のドリフト層65の右端E3とゲート電極54の左端E1との距離がオフセット長OFである。第1のドリフト層65の右端E3は、ゲート電極54の左端E1と第1のフィールドプレート60の左端E2の間に配置されることが好ましい。第1のドリフト層65の右端E3が第1のフィールドプレート60の左端E2より左に離れる(オフセット長OFが大)と、オン抵抗が高くなり過ぎるためである。一方、第1のドリフト層65の右端E3がゲート電極54の左端E1に近づき過ぎると(オフセット長OFが小)と、ソース・ドレイン耐圧Bvdsの低下が生じる。
第1の実施の形態によれば、DMOS構造において、第1のドリフト層65をゲート電極54の左端E1から離して配置したことにより、ソース・ドレイン耐圧Bvdsを向上することができる。しかしながら、図18に示すように、第2のドリフト層64を形成するためのイオン注入におけるボロンdose量が3.0E+12/cm2(=3.0×1012/cm2)以上になると、ソース・ドレイン耐圧Bvdsの低下が生じる。その原因は第1のフィールドプレート60の左端E2と第2のフィールドプレート62の左端E4の間に対応する領域で、PN接合のブレークダウンが生じるためであることがわかった。第1の実施の形態では、第1のドリフト層65をゲート電極54の左端E1から離しているのでゲート電極54の端でのブレークダウンは生じないが、その代わりに、第1のフィールドプレート60の左端E2と第2のフィールドプレート62の左端E4の間に対応する領域で第2のドリフト層64の濃度が高まることにより空乏層が拡がりにくくなり、PN接合のブレークダウンが生じるものと考えられる。
52 埋め込み半導体層 53 ゲート絶縁膜 54 ゲート電極
55 ソース層 56 N型ウエル層 57 ドリフト層
58 ドレイン層 59 第1の層間絶縁膜
60 第1のフィールドプレート 61 第2の層間絶縁膜
62 第2のフィールドプレート 63 ボディ層
64,64A 第2のドリフト層 65 第1のドリフト層
70 ダミー酸化膜 71,72,73,74,75,76 ホトレジスト層
71A ホトレジスト片 CH1,CH2 チャネル領域
Leff1,Leff2 実効チャネル長
OF オフセット長 R 凹部 SL スリット
Claims (6)
- 第1導電型の半導体層上にゲート絶縁膜を介して形成されたゲート電極と、前記ゲート電極の一方の端に隣接して形成された第2導電型のソース層と、前記ソース層の側から前記ゲート電極の下方へ延びた第1導電型のボディ層と、前記ゲート電極の他方の端から離れて形成された第2導電型の第1のドリフト層と、前記第1のドリフト層より深く前記半導体層中に拡散され、前記第1のドリフト層の下方から前記ゲート電極の下方へ延びて、このゲート電極の下方で前記ボディ層と接合を形成する第2の導電型の第2のドリフト層と、前記ゲート電極の一部上から前記第1のドリフト層の一部上に延びる第1のフィールドプレートと、を備え、
前記第1のドリフト層の端が前記ゲート電極の他方の端と前記第1のフィールドプレートの前記第1のドリフト層上の端とのほぼ中央に配置されており、前記第2のドリフト層の下部に凹部が形成されていることを特徴とする記載の半導体装置。 - 前記第1のフィールドプレートの一部上から前記第1のドリフト層上に延びた第2のフィールドプレートを備えることを特徴とする請求項1に記載の半導体装置。
- 前記ゲート電極の一部上から前記第1のドリフト層上に延びる第1のフィールドプレートと、前記第1のフィールドプレートの一部上から前記第1のドリフト層上に延びた第2のフィールドプレートとを備え、
前記第2のドリフト層の凹部は、前記第1のフィールドプレート及び前記第2のフィールドプレートの前記第1のドリフト層上の端の間に対応する領域に形成されていることを特徴とする請求項1に記載の半導体装置。 - 前記第1のドリフト層及び前記第2のドリフト層と接触したドレイン層を備えることを特徴とする請求項1、2、3のいずれかに記載の半導体装置。
- 前記半導体層は、第2導電型の単結晶半導体基板上にエピタキシャル成長されたエピタキシャル半導体層であり、前記単結晶半導体基板と前記半導体層の界面に前記半導体層より高濃度の第1導電型の埋め込み半導体層が形成されていることを特徴とする請求項1、2、3、4のいずれかに記載の半導体装置。
- 前記第1のフィールドプレート及び前記第2のフィールドプレートが前記ソース層と同電位に設定されていることを特徴とする請求項2又は3に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006048373A JP5307973B2 (ja) | 2006-02-24 | 2006-02-24 | 半導体装置 |
TW096105186A TWI341589B (en) | 2006-02-24 | 2007-02-13 | Semiconductor device and manufacturing method of the same |
CNB2007100849511A CN100533769C (zh) | 2006-02-24 | 2007-02-17 | 半导体装置及其制造方法 |
US11/708,682 US7964915B2 (en) | 2006-02-24 | 2007-02-21 | Semiconductor device having a DMOS structure |
KR1020070018332A KR100813391B1 (ko) | 2006-02-24 | 2007-02-23 | 반도체 장치 및 그 제조 방법 |
EP07003778A EP1826815B1 (en) | 2006-02-24 | 2007-02-23 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006048373A JP5307973B2 (ja) | 2006-02-24 | 2006-02-24 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007227746A JP2007227746A (ja) | 2007-09-06 |
JP5307973B2 true JP5307973B2 (ja) | 2013-10-02 |
Family
ID=38051939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006048373A Active JP5307973B2 (ja) | 2006-02-24 | 2006-02-24 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7964915B2 (ja) |
EP (1) | EP1826815B1 (ja) |
JP (1) | JP5307973B2 (ja) |
KR (1) | KR100813391B1 (ja) |
CN (1) | CN100533769C (ja) |
TW (1) | TWI341589B (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
US9773877B2 (en) | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
US11791385B2 (en) | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
US7855414B2 (en) | 2006-07-28 | 2010-12-21 | Broadcom Corporation | Semiconductor device with increased breakdown voltage |
US20080246080A1 (en) * | 2006-07-28 | 2008-10-09 | Broadcom Corporation | Shallow trench isolation (STI) based laterally diffused metal oxide semiconductor (LDMOS) |
ITTO20060785A1 (it) * | 2006-11-02 | 2008-05-03 | St Microelectronics Srl | Dispositivo mos resistente alla radiazione ionizzante |
US7816744B2 (en) * | 2008-07-09 | 2010-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate electrodes of HVMOS devices having non-uniform doping concentrations |
US8283722B2 (en) * | 2010-06-14 | 2012-10-09 | Broadcom Corporation | Semiconductor device having an enhanced well region |
US9123807B2 (en) | 2010-12-28 | 2015-09-01 | Broadcom Corporation | Reduction of parasitic capacitance in a semiconductor device |
US20120175679A1 (en) * | 2011-01-10 | 2012-07-12 | Fabio Alessio Marino | Single structure cascode device |
JP5776217B2 (ja) * | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
KR101872942B1 (ko) * | 2012-03-29 | 2018-06-29 | 삼성전자주식회사 | 반도체 장치 |
US9847411B2 (en) * | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US9306055B2 (en) | 2014-01-16 | 2016-04-05 | Microchip Technology Incorporated | High voltage double-diffused MOS (DMOS) device and method of manufacture |
US9905428B2 (en) * | 2015-11-02 | 2018-02-27 | Texas Instruments Incorporated | Split-gate lateral extended drain MOS transistor structure and process |
JP6950714B2 (ja) * | 2019-01-21 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
JP7147703B2 (ja) * | 2019-07-16 | 2022-10-05 | 株式会社デンソー | 半導体装置 |
KR102224364B1 (ko) * | 2019-10-02 | 2021-03-05 | 주식회사 키 파운드리 | 고전압 반도체 소자 및 그 제조 방법 |
CN111092123A (zh) * | 2019-12-10 | 2020-05-01 | 杰华特微电子(杭州)有限公司 | 横向双扩散晶体管及其制造方法 |
JP7265470B2 (ja) * | 2019-12-24 | 2023-04-26 | 株式会社東芝 | 半導体装置 |
TWI817114B (zh) * | 2021-05-05 | 2023-10-01 | 世界先進積體電路股份有限公司 | 半導體結構 |
US11894430B2 (en) | 2021-09-16 | 2024-02-06 | Vanguard International Semiconductor Corporation | Semiconductor structure |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61180483A (ja) * | 1985-02-05 | 1986-08-13 | Matsushita Electric Ind Co Ltd | 高耐圧mos型半導体装置 |
US4987465A (en) | 1987-01-29 | 1991-01-22 | Advanced Micro Devices, Inc. | Electro-static discharge protection device for CMOS integrated circuit inputs |
GB9106108D0 (en) * | 1991-03-22 | 1991-05-08 | Philips Electronic Associated | A lateral insulated gate field effect semiconductor device |
US5294824A (en) * | 1992-07-31 | 1994-03-15 | Motorola, Inc. | High voltage transistor having reduced on-resistance |
BE1007283A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen. |
JPH08236757A (ja) * | 1994-12-12 | 1996-09-13 | Texas Instr Inc <Ti> | Ldmos装置 |
DE19811297B4 (de) | 1997-03-17 | 2009-03-19 | Fuji Electric Co., Ltd., Kawasaki | MOS-Halbleitervorrichtung mit hoher Durchbruchspannung |
JP3315356B2 (ja) * | 1997-10-15 | 2002-08-19 | 株式会社東芝 | 高耐圧半導体装置 |
DE19800647C1 (de) | 1998-01-09 | 1999-05-27 | Siemens Ag | SOI-Hochspannungsschalter |
US6111291A (en) | 1998-06-26 | 2000-08-29 | Elmos Semiconductor Ag | MOS transistor with high voltage sustaining capability |
US5973341A (en) * | 1998-12-14 | 1999-10-26 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) JFET device |
US6531355B2 (en) * | 1999-01-25 | 2003-03-11 | Texas Instruments Incorporated | LDMOS device with self-aligned RESURF region and method of fabrication |
KR20000060879A (ko) * | 1999-03-20 | 2000-10-16 | 김영환 | 고전압 반도체소자의 제조방법 |
US6211552B1 (en) * | 1999-05-27 | 2001-04-03 | Texas Instruments Incorporated | Resurf LDMOS device with deep drain region |
JP2003501837A (ja) * | 1999-06-03 | 2003-01-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 高圧回路素子を含む半導体装置 |
EP1162664A1 (en) * | 2000-06-09 | 2001-12-12 | Motorola, Inc. | Lateral semiconductor device with low on-resistance and method of making the same |
JP2002237591A (ja) * | 2000-12-31 | 2002-08-23 | Texas Instruments Inc | Dmosトランジスタ・ソース構造とその製法 |
JP2002343960A (ja) * | 2001-05-11 | 2002-11-29 | Hitachi Ltd | 半導体装置 |
EP1267415A3 (en) * | 2001-06-11 | 2009-04-15 | Kabushiki Kaisha Toshiba | Power semiconductor device having resurf layer |
US6773997B2 (en) * | 2001-07-31 | 2004-08-10 | Semiconductor Components Industries, L.L.C. | Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability |
JP2005517283A (ja) * | 2001-11-01 | 2005-06-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ラテラル絶縁ゲートバイポーラトランジスタデバイス |
WO2003075353A1 (fr) | 2002-03-01 | 2003-09-12 | Sanken Electric Co., Ltd. | Dispositif semi-conducteur |
JP2003343960A (ja) | 2002-05-29 | 2003-12-03 | Glocal:Kk | 冷凍装置 |
US6717214B2 (en) * | 2002-05-21 | 2004-04-06 | Koninklijke Philips Electronics N.V. | SOI-LDMOS device with integral voltage sense electrodes |
JP4171251B2 (ja) | 2002-07-02 | 2008-10-22 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US20040108544A1 (en) | 2002-12-09 | 2004-06-10 | Semiconductor Components Industries, Llc | High voltage mosfet with laterally varying drain doping and method |
US7019377B2 (en) | 2002-12-17 | 2006-03-28 | Micrel, Inc. | Integrated circuit including high voltage devices and low voltage devices |
JP4357323B2 (ja) * | 2004-03-04 | 2009-11-04 | 三菱電機株式会社 | 高耐圧半導体装置 |
JP2005294584A (ja) | 2004-03-31 | 2005-10-20 | Eudyna Devices Inc | 半導体装置および不純物導入用マスクならびに半導体装置の製造方法 |
US7498652B2 (en) * | 2004-04-26 | 2009-03-03 | Texas Instruments Incorporated | Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereof |
US7148540B2 (en) | 2004-06-28 | 2006-12-12 | Agere Systems Inc. | Graded conductive structure for use in a metal-oxide-semiconductor device |
DE102004036387B4 (de) | 2004-07-27 | 2018-05-03 | Robert Bosch Gmbh | Hochvolt-MOS-Transistor und entsprechendes Herstellungsverfahren |
JP4972855B2 (ja) * | 2004-08-04 | 2012-07-11 | 富士電機株式会社 | 半導体装置およびその製造方法 |
EP2312635B1 (en) * | 2005-09-07 | 2020-04-01 | Cree, Inc. | Transistors with fluorine treatment |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
US7618866B2 (en) * | 2006-06-09 | 2009-11-17 | International Business Machines Corporation | Structure and method to form multilayer embedded stressors |
-
2006
- 2006-02-24 JP JP2006048373A patent/JP5307973B2/ja active Active
-
2007
- 2007-02-13 TW TW096105186A patent/TWI341589B/zh not_active IP Right Cessation
- 2007-02-17 CN CNB2007100849511A patent/CN100533769C/zh not_active Expired - Fee Related
- 2007-02-21 US US11/708,682 patent/US7964915B2/en active Active
- 2007-02-23 EP EP07003778A patent/EP1826815B1/en not_active Expired - Fee Related
- 2007-02-23 KR KR1020070018332A patent/KR100813391B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20070088377A (ko) | 2007-08-29 |
US20070200195A1 (en) | 2007-08-30 |
CN100533769C (zh) | 2009-08-26 |
KR100813391B1 (ko) | 2008-03-12 |
CN101026191A (zh) | 2007-08-29 |
EP1826815A3 (en) | 2008-11-19 |
EP1826815A2 (en) | 2007-08-29 |
TWI341589B (en) | 2011-05-01 |
US7964915B2 (en) | 2011-06-21 |
JP2007227746A (ja) | 2007-09-06 |
EP1826815B1 (en) | 2011-08-03 |
TW200735365A (en) | 2007-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5307973B2 (ja) | 半導体装置 | |
US9466700B2 (en) | Semiconductor device and method of fabricating same | |
US8772871B2 (en) | Partially depleted dielectric resurf LDMOS | |
US20080050876A1 (en) | Method for fabricating silicon carbide vertical mosfet devices | |
US20050205897A1 (en) | High voltage insulated-gate transistor | |
US8748981B2 (en) | Semiconductor device and related fabrication methods | |
US20090283823A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP2008140817A (ja) | 半導体装置 | |
US20090020813A1 (en) | Formation of lateral trench fets (field effect transistors) using steps of ldmos (lateral double-diffused metal oxide semiconductor) technology | |
US9853099B1 (en) | Double diffused metal oxide semiconductor device and manufacturing method thereof | |
JP2015056619A (ja) | 半導体装置 | |
US7705399B2 (en) | Semiconductor device with field insulation film formed therein | |
JP4645705B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
US9105495B2 (en) | Semiconductor device and related fabrication methods | |
JP2007088334A (ja) | 半導体装置およびその製造方法 | |
JP4268647B2 (ja) | 半導体素子およびその製造方法 | |
JP2009152442A (ja) | 半導体装置及びその製造方法 | |
JP2011066362A (ja) | 半導体装置 | |
EP2673806B1 (en) | Fabrication method of a semiconductor device | |
JP4313822B2 (ja) | 半導体装置の製造方法 | |
KR101702668B1 (ko) | 반도체 장치 | |
JP2010056216A (ja) | 半導体装置およびその製造方法 | |
JP4150704B2 (ja) | 横型短チャネルdmos | |
JP2010199424A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2009164651A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090130 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110526 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20110526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120418 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120419 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121122 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130207 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20130301 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130620 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130628 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5307973 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |