CN101604704B - Hemt器件及其制造方法 - Google Patents
Hemt器件及其制造方法 Download PDFInfo
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- CN101604704B CN101604704B CN200810110136A CN200810110136A CN101604704B CN 101604704 B CN101604704 B CN 101604704B CN 200810110136 A CN200810110136 A CN 200810110136A CN 200810110136 A CN200810110136 A CN 200810110136A CN 101604704 B CN101604704 B CN 101604704B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 61
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 230000009977 dual effect Effects 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 37
- 229910002601 GaN Inorganic materials 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 gallium nitrilo compound Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Abstract
Description
Claims (35)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810110136A CN101604704B (zh) | 2008-06-13 | 2008-06-13 | Hemt器件及其制造方法 |
US12/997,519 US8304811B2 (en) | 2008-06-13 | 2009-03-04 | HEMT device and a manufacturing of the HEMT device |
EP09761251.9A EP2296173B1 (en) | 2008-06-13 | 2009-03-04 | A hemt device and a manufacturing of the hemt device |
PCT/CN2009/070627 WO2009149626A1 (zh) | 2008-06-13 | 2009-03-04 | Hemt器件及其制造方法 |
JP2011512815A JP5652880B2 (ja) | 2008-06-13 | 2009-03-04 | Hemt装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810110136A CN101604704B (zh) | 2008-06-13 | 2008-06-13 | Hemt器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101604704A CN101604704A (zh) | 2009-12-16 |
CN101604704B true CN101604704B (zh) | 2012-09-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810110136A Active CN101604704B (zh) | 2008-06-13 | 2008-06-13 | Hemt器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8304811B2 (zh) |
EP (1) | EP2296173B1 (zh) |
JP (1) | JP5652880B2 (zh) |
CN (1) | CN101604704B (zh) |
WO (1) | WO2009149626A1 (zh) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5337415B2 (ja) * | 2008-06-30 | 2013-11-06 | シャープ株式会社 | ヘテロ接合電界効果トランジスタおよびヘテロ接合電界効果トランジスタの製造方法 |
JP5304134B2 (ja) * | 2008-09-24 | 2013-10-02 | 三菱電機株式会社 | 窒化物半導体装置およびその製造方法 |
JP2010118556A (ja) * | 2008-11-13 | 2010-05-27 | Furukawa Electric Co Ltd:The | 半導体装置および半導体装置の製造方法 |
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US8168486B2 (en) * | 2009-06-24 | 2012-05-01 | Intersil Americas Inc. | Methods for manufacturing enhancement-mode HEMTs with self-aligned field plate |
JP2011138973A (ja) * | 2009-12-29 | 2011-07-14 | New Japan Radio Co Ltd | 窒化物半導体装置 |
US8802516B2 (en) * | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
US20110241020A1 (en) * | 2010-03-31 | 2011-10-06 | Triquint Semiconductor, Inc. | High electron mobility transistor with recessed barrier layer |
US8816395B2 (en) * | 2010-05-02 | 2014-08-26 | Visic Technologies Ltd. | Field effect power transistors |
KR20110122525A (ko) * | 2010-05-04 | 2011-11-10 | 삼성전자주식회사 | Ldd 영역을 갖는 고 전자 이동도 트랜지스터(hemt) 및 그 제조방법 |
US8809987B2 (en) | 2010-07-06 | 2014-08-19 | The Hong Kong University Of Science And Technology | Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors |
JP2012054471A (ja) * | 2010-09-02 | 2012-03-15 | Fujitsu Ltd | 半導体装置及びその製造方法、電源装置 |
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JP2012209297A (ja) * | 2011-03-29 | 2012-10-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US9024357B2 (en) * | 2011-04-15 | 2015-05-05 | Stmicroelectronics S.R.L. | Method for manufacturing a HEMT transistor and corresponding HEMT transistor |
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US20130105817A1 (en) | 2011-10-26 | 2013-05-02 | Triquint Semiconductor, Inc. | High electron mobility transistor structure and method |
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US8963162B2 (en) * | 2011-12-28 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor |
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KR102024290B1 (ko) * | 2012-11-08 | 2019-11-04 | 엘지이노텍 주식회사 | 전력 반도체 소자 |
US9425276B2 (en) * | 2013-01-21 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | High electron mobility transistors |
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US9129889B2 (en) * | 2013-03-15 | 2015-09-08 | Semiconductor Components Industries, Llc | High electron mobility semiconductor device and method therefor |
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JP6169958B2 (ja) * | 2013-12-02 | 2017-07-26 | 日本電信電話株式会社 | 電界効果トランジスタ |
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WO2017036025A1 (zh) * | 2015-09-01 | 2017-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物增强型hemt及其制备方法 |
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FR3041150B1 (fr) * | 2015-09-14 | 2017-09-29 | Commissariat Energie Atomique | Transistor a enrichissement comportant une heterojonction algan/gan et une grille en diamant dope p |
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US10026823B1 (en) * | 2017-03-08 | 2018-07-17 | Raytheon Company | Schottky contact structure for semiconductor devices and method for forming such schottky contact structure |
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JP6767411B2 (ja) | 2018-03-06 | 2020-10-14 | 株式会社東芝 | 半導体装置、電源回路、及び、コンピュータ |
JP7448314B2 (ja) * | 2019-04-19 | 2024-03-12 | 株式会社東芝 | 半導体装置 |
CN112864015B (zh) * | 2021-01-27 | 2022-07-05 | 浙江集迈科微电子有限公司 | GaN器件及制备方法 |
CN113097291B (zh) * | 2021-03-31 | 2022-08-26 | 浙江集迈科微电子有限公司 | GaN器件结构及其制备方法 |
US20230282727A1 (en) * | 2022-03-03 | 2023-09-07 | Stmicroelectronics S.R.L. | Hemt device and manufacturing process thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6787826B1 (en) * | 2003-03-14 | 2004-09-07 | Triquint Semiconductor, Inc. | Heterostructure field effect transistor |
CN101162695A (zh) * | 2006-10-09 | 2008-04-16 | 西安能讯微电子有限公司 | 氮化镓hemt器件表面钝化及提高器件击穿电压的工艺 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4224737B2 (ja) * | 1999-03-04 | 2009-02-18 | ソニー株式会社 | 半導体素子 |
JP4186032B2 (ja) * | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
JP4663156B2 (ja) * | 2001-05-31 | 2011-03-30 | 富士通株式会社 | 化合物半導体装置 |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
US20050133816A1 (en) * | 2003-12-19 | 2005-06-23 | Zhaoyang Fan | III-nitride quantum-well field effect transistors |
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7859014B2 (en) * | 2004-06-24 | 2010-12-28 | Nec Corporation | Semiconductor device |
US7229903B2 (en) * | 2004-08-25 | 2007-06-12 | Freescale Semiconductor, Inc. | Recessed semiconductor device |
JP2006114655A (ja) * | 2004-10-14 | 2006-04-27 | Hitachi Cable Ltd | 半導体エピタキシャルウェハ及び電界効果トランジスタ |
JP4514584B2 (ja) * | 2004-11-16 | 2010-07-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US8575651B2 (en) * | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
EP1932181A4 (en) * | 2005-09-16 | 2009-06-17 | Univ California | ENRICHMENT FIELD EFFECT TRANSISTOR, GALLIUM NITRIDE / ALUMINUM NITRIDE AND N-POLARITY GALLIUM |
US7932539B2 (en) * | 2005-11-29 | 2011-04-26 | The Hong Kong University Of Science And Technology | Enhancement-mode III-N devices, circuits, and methods |
US8853666B2 (en) * | 2005-12-28 | 2014-10-07 | Renesas Electronics Corporation | Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor |
JP5334149B2 (ja) * | 2006-06-02 | 2013-11-06 | 独立行政法人産業技術総合研究所 | 窒化物半導体電界効果トランジスタ |
JP2008016762A (ja) | 2006-07-10 | 2008-01-24 | Oki Electric Ind Co Ltd | GaN−HEMTの製造方法 |
JP4296195B2 (ja) * | 2006-11-15 | 2009-07-15 | シャープ株式会社 | 電界効果トランジスタ |
JP2008124353A (ja) * | 2006-11-15 | 2008-05-29 | Toshiba Corp | 半導体装置の製造方法 |
US7859021B2 (en) * | 2007-08-29 | 2010-12-28 | Sanken Electric Co., Ltd. | Field-effect semiconductor device |
US7915643B2 (en) * | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
WO2009076076A2 (en) * | 2007-12-10 | 2009-06-18 | Transphorm Inc. | Insulated gate e-mode transistors |
US8519438B2 (en) * | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
-
2008
- 2008-06-13 CN CN200810110136A patent/CN101604704B/zh active Active
-
2009
- 2009-03-04 EP EP09761251.9A patent/EP2296173B1/en active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6787826B1 (en) * | 2003-03-14 | 2004-09-07 | Triquint Semiconductor, Inc. | Heterostructure field effect transistor |
CN101162695A (zh) * | 2006-10-09 | 2008-04-16 | 西安能讯微电子有限公司 | 氮化镓hemt器件表面钝化及提高器件击穿电压的工艺 |
Non-Patent Citations (1)
Title |
---|
JP特开2008-16762A 2008.01.24 |
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