JP7448314B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7448314B2 JP7448314B2 JP2019080072A JP2019080072A JP7448314B2 JP 7448314 B2 JP7448314 B2 JP 7448314B2 JP 2019080072 A JP2019080072 A JP 2019080072A JP 2019080072 A JP2019080072 A JP 2019080072A JP 7448314 B2 JP7448314 B2 JP 7448314B2
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- 239000004065 semiconductor Substances 0.000 title claims description 278
- 150000001875 compounds Chemical class 0.000 claims description 196
- 238000004070 electrodeposition Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、第1実施形態に係る半導体装置を例示する模式的断面図である。
図1に示すように、実施形態に係る半導体装置110は、第1電極51、第2電極52、第3電極53、第1半導体層11、第2半導体層12及び第1化合物部材31を含む。
図2(a)~図2(c)は、図1の矢印AAからみた平面図である。図2(a)のA1-A2線断面が図1に対応する。図2(b)及び図2(c)に例示する半導体装置110a及び110bは、複数の第1化合物部分31pのパターン、及び、複数の第2化合物部分32pのパターンを除いて、半導体装置110と同様の構成を有する。
図3は、第2実施形態に係る半導体装置を例示する模式的断面図である。
図3に示すように、実施形態に係る半導体装置120は、第1電極51、第2電極52、第3電極53、第1半導体層11、第2半導体層12及び第1化合物部材31を含む。半導体装置120は、第3化合物部材33をさらに含む。第1絶縁層41は、第1絶縁領域41aを含む。半導体装置120におけるこれ以外の構成は、半導体装置110の構成と同様である。以下、第3化合物部材33及び第1絶縁領域41aの例について説明する。
図4に示すように、実施形態に係る半導体装置121は、第4化合物部材34をさらに含む。第1絶縁層41は、第2絶縁領域41bを含む。半導体装置121におけるこれ以外の構成は、半導体装置120の構成と同様である。以下、第4化合物部材34及び第2絶縁領域41bの例について説明する。
図5に示すように、実施形態に係る半導体装置122においては、第3化合物部材33は、複数の第3化合物部分33pを含む。半導体装置122におけるこれ以外の構成は、半導体装置120の構成と同様である。以下、複数の第3化合物部分33pの例について説明する。
図6は、第3実施形態に係る半導体装置を例示する模式的断面図である。
図6に示すように、実施形態に係る半導体装置130は、第1電極51、第2電極52、第3電極53、第1半導体層11、第2半導体層12、第3化合物部材33(化合物部材)、及び、第1絶縁層41を含む。
図7~図10に示すように、半導体装置120a、121a、122a及び130aにおいて、X軸方向における端部53eの位置は、X軸方向における端部35eの位置と、X軸方向における第3化合物部材33の位置と、の間にある。半導体装置120a、121a、122a及び130aにおけるこれを除く構成は、半導体装置120、121、122及び130における構成と同様である。
図11~図14に示すように、半導体装置120b、121b、122b及び130bは、導電部材54を含む。半導体装置120b、121b、122b及び130bにおけるこれを除く構成は、半導体装置120、121、122及び130における構成と同様である。
図15~図18に示すように、半導体装置120c、121c、122c及び130cにおいては、導電部材54の端部54eの位置が、半導体装置120b、121b、122b及び130bにおけるそれとは異なる。半導体装置120c、121c、122c及び130cにおけるこれを除く構成は、半導体装置120b、121b、122b及び130bにおける構成と同様である。
図19~図22に示すように、半導体装置120d、121d、122d及び130dにおいては、X軸方向における端部53eの位置は、X軸方向における端部35eの位置と、X軸方向における第3化合物部材33の位置と、の間にある。半導体装置120d、121d、122d及び130dにおけるこれを除く構成は、半導体装置120b、121b、122b及び130bにおける構成と同様である。上記のような、端部53e、端部35e及び第3化合物部材33の位置の関係により、例えば、信頼性をより向上することができる。
図23~図26に示すように、半導体装置120e、121e、122e及び130eは、第2絶縁層42を含む。半導体装置120e、121e、122e及び130eにおけるこれを除く構成は、半導体装置120d、121d、122d及び130dにおける構成と同様である。
図27~図30に示すように、半導体装置120f、121f、122f及び130fは、導電部材55を含む。半導体装置120f、121f、122f及び130fにおけるこれを除く構成は、半導体装置120a、121a、122a及び130aにおける構成と同様である。
31~35…第1~第5化合物部材、 31p~33p…第1~第3化合物部分、 35e、35f…端部、 41…第1絶縁層、 41a、41b…第1、第2絶縁領域、 41p…一部、 42…第2絶縁層、 42a、42b…第1、第2絶縁部分、 51~53…第1~第3電極、 53e、53f…端部、 54…導電部材、 54A、54B…第1、第2導電部分、 54e、54f…端部、 55…導電部材、 55A、55B…第3、第4導電部分、 55e、55f…端部、 110、110a、110b、120、120a~120f、121、121a~121f、122、122a~122f、130、130a~130f…半導体装置、 AA…矢印
Claims (19)
- 第1電極と、
第2電極と、
第3電極であって、前記第2電極から前記第1電極への第1方向における前記第3電極の位置は、前記第1方向における前記第2電極の位置と、前記第1方向における前記第1電極の位置と、の間にある、前記第3電極と、
Alx1Ga1-x1N(0≦x1<1)を含む第1半導体層であって、前記第1半導体層は、第1部分領域、第2部分領域、第3部分領域、第4部分領域及び第5部分領域を含み、前記第1部分領域から前記第1電極への第2方向は、前記第1方向と交差し、前記第2部分領域から前記第2電極への方向は、前記第2方向に沿い、前記第3部分領域から前記第3電極への方向は、前記第2方向に沿い、前記第4部分領域は、前記第1方向において前記第3部分領域と前記第1部分領域との間にあり、前記第5部分領域は、前記第1方向において前記第2部分領域と前記第3部分領域との間にある、前記第1半導体層と、
Alx2Ga1-x2N(0<x2<1、x1<x2)を含む第2半導体層であって、前記第2半導体層は、第1半導体領域、第2半導体領域及び第3半導体領域を含み、前記第4部分領域から前記第1半導体領域への方向は前記第2方向に沿い、前記第5部分領域から前記第2半導体領域への方向は前記第2方向に沿い、前記第3半導体領域は、前記第2方向において、前記第1部分領域と前記第1電極との間にある、前記第2半導体層と、
Aly1Ga1-y1N(0<y1≦1、x2<y1)を含む第1化合物部材であって、前記第1化合物部材は、複数の第1化合物部分を含み、前記複数の第1化合物部分は、前記第3半導体領域と前記第1電極との間にあり、前記複数の第1化合物部分の1つと、前記複数の第1化合物部分の別の1つと、の間に、前記第1電極の一部がある、前記第1化合物部材と、
を備えた半導体装置。 - 前記複数の第1化合物部分の前記1つから、前記複数の第1化合物部分の前記別の1つへの方向は、前記第1方向の成分を有する、請求項1記載の半導体装置。
- 前記複数の第1化合物部分の前記1つから、前記複数の第1化合物部分の前記別の1つへの方向は、前記第1方向及び前記第2方向を含む平面と交差する第3方向の成分を有する、請求項1または2に記載の半導体装置。
- 前記複数の第1化合物部分の前記1つ、及び、前記複数の第1化合物部分の前記別の1つは、前記第3半導体領域と接する、請求項1~3のいずれか1つに記載の半導体装置。
- 前記第1電極の前記一部は、前記第3半導体領域と接する、請求項1~4のいずれか1つに記載の半導体装置。
- Aly2Ga1-y2N(0<y2≦1、x2<y2)を含む第2化合物部材をさらに備え、
前記第2半導体層は、第4半導体領域をさらに含み、
前記第4半導体領域は、前記第2方向において、前記第2部分領域と前記第2電極との間にあり、
前記第2化合物部材は、複数の第2化合物部分を含み、前記複数の第2化合物部分は、前記第4半導体領域と前記第2電極との間にあり、前記複数の第2化合物部分の1つと、前記複数の第2化合物部分の別の1つと、の間に、前記第2電極の一部がある、請求項1~5のいずれか1つに記載の半導体装置。 - 前記複数の第2化合物部分の前記1つから、前記複数の第2化合物部分の前記別の1つへの方向は、前記第1方向の成分を有する、請求項6記載の半導体装置。
- 前記複数の第2化合物部分の前記1つから、前記複数の第2化合物部分の前記別の1つへの方向は、前記第1方向及び前記第2方向を含む平面と交差する第3方向の成分を有する、請求項6または7に記載の半導体装置。
- 前記複数の第2化合物部分の前記1つ、及び、前記複数の第2化合物部分の前記別の1つは、前記第4半導体領域と接する、請求項6~8のいずれか1つに記載の半導体装置。
- 前記第2電極の前記一部は、前記第4半導体領域と接する、請求項6~9のいずれか1つに記載の半導体装置。
- Aly3Ga1-y3N(0<y3≦1、x2<y3)を含む第3化合物部材と、
第1絶縁層と、
をさらに備え、
前記第1半導体層は、第6部分領域をさらに含み、前記第6部分領域は、前記第1方向において、前記第3部分領域と前記第4部分領域との間にあり、
前記第2半導体層は、第5半導体領域をさらに含み、前記第6部分領域から前記第5半導体領域への方向は、前記第2方向に沿い、
前記第1半導体領域は、前記第2方向において前記第4部分領域と前記第3化合物部材との間にあり、
前記第1絶縁層は、第1絶縁領域を含み、
前記第1絶縁領域は、前記第1方向において、前記第3電極の少なくとも一部と、前記第3化合物部材との間にある、請求項1~10のいずれか1つに記載の半導体装置。 - 前記第3化合物部材は、前記第1半導体領域と接する、請求項11記載の半導体装置。
- 前記第1絶縁領域は、前記第5半導体領域と接する、請求項11または12に記載の半導体装置。
- 前記第3化合物部材は、複数の第3化合物部分を含み、前記複数の第3化合物部分の1つと、前記複数の第3化合物部分の別の1つと、の間に、前記第1絶縁層の一部がある、請求項11~13のいずれか1つに記載の半導体装置。
- Aly4Ga1-y4N(0<y4≦1、x2<y4)を含む第4化合物部材をさらに備え、
前記第1半導体層は、第7部分領域をさらに含み、前記第7部分領域は、前記第1方向において、前記第5部分領域と前記第3部分領域との間にあり、
前記第2半導体層は、第6半導体領域をさらに含み、前記第7部分領域から前記第6半導体領域への方向は、前記第2方向に沿い、
前記第2半導体領域は、前記第2方向において前記第5部分領域と前記第4化合物部材との間にあり、
前記第1絶縁層は、第2絶縁領域をさらに含み、
前記第2絶縁領域は、前記第1方向において、前記第4化合物部材と、前記第3電極の少なくとも一部と、の間にある、請求項11~14のいずれか1つに記載の半導体装置。 - 前記第4化合物部材は、前記第2半導体領域と接する、請求項15記載の半導体装置。
- 前記第2絶縁領域は、前記第6半導体領域と接する、請求項15または16に記載の半導体装置。
- Aly5Ga1-y5N(0<y5≦1、x2<y5)を含む第5化合物部材をさらに備え、
前記第5化合物部材の少なくとも一部と前記第1半導体層との間に、前記第2半導体層の一部がある、請求項1~17のいずれか1つに記載の半導体装置。 - 前記第5化合物部材の別の一部は、前記第3電極と前記第1半導体層との間にある、請求項18記載の半導体装置。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129696A (ja) | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008227014A (ja) | 2007-03-09 | 2008-09-25 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置及びその製造方法 |
WO2012172753A1 (ja) | 2011-06-13 | 2012-12-20 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2013179376A (ja) | 2013-06-26 | 2013-09-09 | Panasonic Corp | 半導体装置 |
JP2013247363A (ja) | 2012-05-25 | 2013-12-09 | Triquint Semiconductor Inc | 電荷誘導層を有するiii族窒化物トランジスタ |
JP2015179785A (ja) | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体装置 |
JP2017041543A (ja) | 2015-08-20 | 2017-02-23 | 住友電気工業株式会社 | 高電子移動度トランジスタ |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
CN101604704B (zh) * | 2008-06-13 | 2012-09-05 | 西安能讯微电子有限公司 | Hemt器件及其制造方法 |
JP5654884B2 (ja) * | 2011-01-26 | 2015-01-14 | 株式会社東芝 | 窒化物半導体装置の製造方法 |
JP5765147B2 (ja) * | 2011-09-01 | 2015-08-19 | 富士通株式会社 | 半導体装置 |
JP2013229486A (ja) | 2012-04-26 | 2013-11-07 | Mitsubishi Electric Corp | ヘテロ接合電界効果トランジスタ及びその製造方法 |
US9425276B2 (en) * | 2013-01-21 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | High electron mobility transistors |
US9006791B2 (en) * | 2013-03-15 | 2015-04-14 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | III-nitride P-channel field effect transistor with hole carriers in the channel |
JP2014220407A (ja) * | 2013-05-09 | 2014-11-20 | ローム株式会社 | 窒化物半導体素子 |
JP2015177016A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置 |
JP6258148B2 (ja) * | 2014-08-05 | 2018-01-10 | 株式会社東芝 | 半導体装置 |
CN104241400B (zh) * | 2014-09-05 | 2017-03-08 | 苏州捷芯威半导体有限公司 | 场效应二极管及其制备方法 |
JP2016058546A (ja) * | 2014-09-09 | 2016-04-21 | 株式会社東芝 | 半導体装置 |
JP6332021B2 (ja) * | 2014-12-26 | 2018-05-30 | 株式会社デンソー | 半導体装置 |
US9837522B2 (en) * | 2015-11-02 | 2017-12-05 | Infineon Technologies Austria Ag | III-nitride bidirectional device |
US9960262B2 (en) * | 2016-02-25 | 2018-05-01 | Raytheon Company | Group III—nitride double-heterojunction field effect transistor |
JP6594272B2 (ja) | 2016-09-02 | 2019-10-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2018060847A (ja) | 2016-10-03 | 2018-04-12 | 株式会社東芝 | 半導体装置 |
JP6629252B2 (ja) * | 2017-02-01 | 2020-01-15 | 株式会社東芝 | 半導体装置の製造方法 |
US10804384B2 (en) * | 2017-12-27 | 2020-10-13 | Rohm Co., Ltd. | Semiconductor device and manufacturing method thereof |
EP3753051A4 (en) * | 2018-02-14 | 2021-11-17 | Hrl Laboratories, Llc | VERY STAGGERED LINEAR HEMT STRUCTURES |
JP2019192698A (ja) * | 2018-04-19 | 2019-10-31 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び増幅器 |
JP7071893B2 (ja) | 2018-07-23 | 2022-05-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20200303532A1 (en) * | 2019-03-20 | 2020-09-24 | Win Semiconductors Corp. | GaN-BASED FIELD EFFECT TRANSISTOR |
US20200357905A1 (en) * | 2019-05-08 | 2020-11-12 | Cambridge Electronics Inc. | Iii-nitride transistor device with a thin barrier |
-
2019
- 2019-04-19 JP JP2019080072A patent/JP7448314B2/ja active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129696A (ja) | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2008227014A (ja) | 2007-03-09 | 2008-09-25 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置及びその製造方法 |
WO2012172753A1 (ja) | 2011-06-13 | 2012-12-20 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2013247363A (ja) | 2012-05-25 | 2013-12-09 | Triquint Semiconductor Inc | 電荷誘導層を有するiii族窒化物トランジスタ |
JP2013179376A (ja) | 2013-06-26 | 2013-09-09 | Panasonic Corp | 半導体装置 |
JP2015179785A (ja) | 2014-03-19 | 2015-10-08 | 株式会社東芝 | 半導体装置 |
JP2017041543A (ja) | 2015-08-20 | 2017-02-23 | 住友電気工業株式会社 | 高電子移動度トランジスタ |
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