JP5635888B2 - 高導電性のソース/ドレイン接点を有するiii族窒化物トランジスタ及びその製造方法 - Google Patents
高導電性のソース/ドレイン接点を有するiii族窒化物トランジスタ及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 22
- 150000004767 nitrides Chemical class 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Description
本明細書において、「III族窒化物」、「III族窒化物デバイス」、「III族窒化物トランジスタ」、「III族窒化物半導体」などは、例えば、GaN、AlGaN、InN、AlN、InGaN、InAlGaN、などのような、これらに限定されない、窒素と少なくとも1つのIII族元素とを含む化合物半導体を意味する。
242 III族窒化物半導体本体
254 ソース領域
256 ゲート領域
258 ドレイン領域
260、262、264 誘電体トレンチ
270 ゲート誘電体
272 拡散バリア層
274 ハードマスク層
276 フォトレジスト層
280、282 開口部
284 隅部
286 トレンチ側壁ゲート誘電体
288 ゲート誘電体水平突起
290 接点金属
Claims (14)
- III族窒化物半導体本体上にIII族窒化物トランジスタを製造する方法であって、
フィールド誘電体層に誘電体トレンチをエッチングして、前記III族窒化物半導体本体のゲート、ソース、及びドレイン領域上に延在する前記III族窒化物半導体本体及び前記誘電体トレンチのそれぞれを露出する、当該エッチングするステップと、
前記誘電体トレンチの各々の側壁及び底部に沿って、前記ゲート、ソース、及びドレイン領域上にゲート誘電体層を形成するステップと、
前記ゲート誘電体層上にブランケット拡散バリア層を形成するステップと、
前記ブランケット拡散バリア層を前記ゲート領域内に残しつつ、前記ソース及びドレイン領域から前記ブランケット拡散バリア層のそれぞれの部分を除去するステップと、
前記ブランケット拡散バリア層のそれぞれの部分を除去するステップの後、前記ゲート領域内に前記ゲート誘電体層を保ちつつ、前記ソース及びドレイン領域から前記ゲート誘電体層を除去し、前記ソース及びドレイン領域を露出させるステップと、
前記ゲート誘電体層を除去するステップの後、前記ソース及びドレイン領域に接点金属を堆積することにより、オーミック接触を形成するステップと、
を含む、III族窒化物トランジスタの製造方法。 - 前記ゲート誘電体層を除去するステップは、前記ソース及びドレイン領域の部分上の前記誘電体トレンチ内にゲート誘電体水平突起部を残存させるステップを含む、請求項1に記載の方法。
- 前記ゲート誘電体層を除去するステップは、前記ソース及びドレイン領域上に延在する前記誘電体トレンチ内にトレンチ側壁ゲート誘電体層を残存させるステップを含む、請求項1に記載の方法。
- 前記ゲート誘電体層を除去するステップは、前記ソース及びドレイン領域の部分上の前記誘電体トレンチ内にゲート誘電体水平突起部を残存させるステップと、前記ソース及びドレイン領域上に延在する前記誘電体トレンチ内にトレンチ側壁ゲート誘電体層を残存させるステップとを含む、請求項1に記載の方法。
- 前記フィールド誘電体層は、窒化シリコンである、請求項1に記載の方法。
- 前記ゲート誘電体層は、窒化シリコンである、請求項1に記載の方法。
- 前記拡散バリア層は、窒化チタンである、請求項1に記載の方法。
- 前記III族窒化物半導体本体は、GaN及びAlGaNの層を備える、請求項1に記載の方法。
- 前記III族窒化物トランジスタは、GaNトランジスタである、請求項1に記載の方法。
- III族窒化物半導体本体上に製造したIII族窒化物トランジスタであって、
前記III族窒化物本体上に形成されたゲート領域、ソース領域、及びドレイン領域と、
前記ゲート領域上に位置し、且つ、前記ソース領域及び前記ドレイン領域上には位置しないゲート誘電体層の部分と、
前記ソース領域及び前記ドレイン領域上のフィールド誘電体層の誘電体トレンチであって、当該誘電体トレンチ内にゲート誘電体水平突起部が保持される、当該誘電体トレンチと、
前記ソース及びドレイン領域に堆積される接点金属でオーミック接触を形成するために、前記ソース及びドレイン領域を露出させるように、前記ゲート誘電体層の部分上、且つ、前記ソース及びドレイン領域上ではない前記ゲート領域上に形成した、前記ゲート誘電体層の部分と同一の広がりを有する拡散バリアと、を備えることを特徴とする、III族窒化物半導体基板上に製造したIII族窒化物トランジスタ。 - 前記フィールド誘電体層は、窒化シリコンである、請求項10に記載のIII族窒化物トランジスタ。
- 前記ゲート誘電体層の部分は、窒化シリコンである、請求項10に記載のIII族窒化物トランジスタ。
- 前記拡散バリアは、窒化チタンである、請求項10に記載のIII族窒化物トランジスタ。
- 前記III族窒化物半導体本体は、GaN及びAlGaNの層を備える、請求項10に記載のIII族窒化物トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/653,240 | 2009-12-10 | ||
US12/653,240 US9378965B2 (en) | 2009-12-10 | 2009-12-10 | Highly conductive source/drain contacts in III-nitride transistors |
Publications (2)
Publication Number | Publication Date |
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JP2011181893A JP2011181893A (ja) | 2011-09-15 |
JP5635888B2 true JP5635888B2 (ja) | 2014-12-03 |
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US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US9362905B2 (en) | 2011-03-21 | 2016-06-07 | Infineon Technologies Americas Corp. | Composite semiconductor device with turn-on prevention control |
US8766375B2 (en) | 2011-03-21 | 2014-07-01 | International Rectifier Corporation | Composite semiconductor device with active oscillation prevention |
US9236376B2 (en) | 2011-03-21 | 2016-01-12 | Infineon Technologies Americas Corp. | Power semiconductor device with oscillation prevention |
US9859882B2 (en) | 2011-03-21 | 2018-01-02 | Infineon Technologies Americas Corp. | High voltage composite semiconductor device with protection for a low voltage device |
US8697505B2 (en) * | 2011-09-15 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a semiconductor structure |
US9153672B2 (en) * | 2012-12-21 | 2015-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical BJT for high density memory |
US9525054B2 (en) | 2013-01-04 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor and method of forming the same |
US9679762B2 (en) * | 2015-03-17 | 2017-06-13 | Toshiba Corporation | Access conductivity enhanced high electron mobility transistor |
CN111916351A (zh) * | 2019-05-10 | 2020-11-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体器件及其制备方法 |
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JPH03248469A (ja) | 1990-02-26 | 1991-11-06 | Nec Corp | Mos型半導体装置 |
JP3986887B2 (ja) * | 2002-05-17 | 2007-10-03 | 松下電器産業株式会社 | 半導体装置 |
US6884704B2 (en) * | 2002-08-05 | 2005-04-26 | Hrl Laboratories, Llc | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
JP2005191449A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
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US7834380B2 (en) * | 2004-12-09 | 2010-11-16 | Panasonic Corporation | Field effect transistor and method for fabricating the same |
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WO2007108055A1 (ja) * | 2006-03-16 | 2007-09-27 | Fujitsu Limited | 化合物半導体装置及びその製造方法 |
JP5065616B2 (ja) | 2006-04-21 | 2012-11-07 | 株式会社東芝 | 窒化物半導体素子 |
JP2008016762A (ja) * | 2006-07-10 | 2008-01-24 | Oki Electric Ind Co Ltd | GaN−HEMTの製造方法 |
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JP2008124353A (ja) * | 2006-11-15 | 2008-05-29 | Toshiba Corp | 半導体装置の製造方法 |
JP5401758B2 (ja) * | 2006-12-12 | 2014-01-29 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
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JP5332113B2 (ja) * | 2007-02-15 | 2013-11-06 | 富士通株式会社 | 半導体装置及びその製造方法 |
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WO2009012536A1 (en) | 2007-07-20 | 2009-01-29 | Interuniversitair Microelektronica Centrum | Damascene contacts on iii-v cmos devices |
JP5417693B2 (ja) * | 2007-08-22 | 2014-02-19 | 日本電気株式会社 | 半導体装置 |
JP2010050347A (ja) * | 2008-08-22 | 2010-03-04 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US8552471B2 (en) * | 2009-01-16 | 2013-10-08 | Nec Corporation | Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same |
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