JP5655424B2 - 化合物半導体装置 - Google Patents
化合物半導体装置 Download PDFInfo
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- JP5655424B2 JP5655424B2 JP2010178778A JP2010178778A JP5655424B2 JP 5655424 B2 JP5655424 B2 JP 5655424B2 JP 2010178778 A JP2010178778 A JP 2010178778A JP 2010178778 A JP2010178778 A JP 2010178778A JP 5655424 B2 JP5655424 B2 JP 5655424B2
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- 239000004065 semiconductor Substances 0.000 title claims description 109
- 150000001875 compounds Chemical class 0.000 title claims description 96
- 239000012159 carrier gas Substances 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 30
- 238000000034 method Methods 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Description
本発明の第1の実施形態に係る化合物半導体装置1は、図1に示すように、化合物半導体層20と、化合物半導体層20の主面200上に配置されたソース電極3及びドレイン電極4と、ソース電極3とドレイン電極4間で主面200上に配置されたゲート電極5と、ゲート電極5とドレイン電極4間で主面200上にフィールド絶縁膜60を介して配置されたフィールドプレート6とを備える。
を基板とみなすこともできる。バッファ層11の構造、配置は、基板10の材料等に応じて決定される。
図1に示した化合物半導体装置1のゲート電極構造はMIS構造である。しかし、化合物半導体装置1のゲート電極構造が、ゲート電極5と化合物半導体層20とがショットキー接合するMES構造であってもよい。ゲート電極5の構造が、ゲート絶縁膜がなくメタル層51のみの構造である例を、図9に示す。
本発明の第2の実施形態に係る化合物半導体装置1は、図13に示すように、化合物半導体層20の主面200に形成された凹部(リセス)7の底面にゲート電極5が配置されていることが、図1と異なる点である。また、フィールドプレート6下方のゲート絶縁膜50が、フィールド絶縁膜として作用する。その他の構成については、図1に示す第1の実施形態と同様である。
上記のように、本発明は第1及び第2の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。例えば、化合物半導体装置1がノーマリオフ型トランジスタであっても、ノーマリオン型トランジスタであってもよい。
3…ソース電極
4…ドレイン電極
5…ゲート電極
6…フィールドプレート
7…凹部
10…基板
11…バッファ層
20…化合物半導体層
21…キャリア走行層
22…キャリア供給層
23…二次元キャリアガス層
50…ゲート絶縁膜
51…メタル層
60…フィールド絶縁膜
210…低導電性領域
502…ドレイン側端部
Claims (5)
- キャリア供給層、及び前記キャリア供給層との界面近傍において二次元キャリアガス層が形成されるキャリア走行層を有する化合物半導体層と、
前記化合物半導体層の主面上に配置されたソース電極及びドレイン電極と、
前記ソース電極と前記ドレイン電極間で前記主面上に配置されたゲート電極と、
前記ゲート電極と前記ドレイン電極間で前記主面上方に配置されたフィールドプレートと、
前記フィールドプレート直下の前記二次元キャリアガス層が形成される領域内に配置された、上方に前記フィールドプレート若しくは前記ゲート電極が配置されていない前記二次元キャリアガス層が形成される領域よりも導電率が低い低導電性領域と
を備え、
オフ状態においては、前記低導電性領域によって前記ゲート電極のドレイン側端部におけるバイアス電界の集中が緩和され、
オン状態においては、前記フィールドプレートにバイアス電圧を印加することによって前記低導電性領域のキャリア濃度が上昇し、前記低導電性領域の導電性がオフ状態よりも向上する
ことを特徴とする化合物半導体装置。 - 前記ゲート電極が、前記化合物半導体層の前記主面に接するゲート絶縁膜を備えることを特徴とする請求項1に記載の化合物半導体装置。
- 前記化合物半導体層の前記主面に形成された凹部の底面に前記ゲート電極が配置されていることを特徴とする請求項1又は2に記載の化合物半導体装置。
- 前記ゲート電極直下の前記二次元キャリアガス層が形成される領域内に、前記低導電性領域を有することを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。
- 前記ゲート電極と前記フィールドプレートが連接していることを特徴とする請求項1乃至4のいずれか1項に記載の化合物半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010178778A JP5655424B2 (ja) | 2010-08-09 | 2010-08-09 | 化合物半導体装置 |
US13/204,968 US20120091508A1 (en) | 2010-08-09 | 2011-08-08 | Compound semiconductor device |
TW100128316A TWI433319B (zh) | 2010-08-09 | 2011-08-09 | Compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010178778A JP5655424B2 (ja) | 2010-08-09 | 2010-08-09 | 化合物半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012038966A JP2012038966A (ja) | 2012-02-23 |
JP5655424B2 true JP5655424B2 (ja) | 2015-01-21 |
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JP2010178778A Active JP5655424B2 (ja) | 2010-08-09 | 2010-08-09 | 化合物半導体装置 |
Country Status (3)
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US (1) | US20120091508A1 (ja) |
JP (1) | JP5655424B2 (ja) |
TW (1) | TWI433319B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5776217B2 (ja) * | 2011-02-24 | 2015-09-09 | 富士通株式会社 | 化合物半導体装置 |
US9379195B2 (en) | 2012-05-23 | 2016-06-28 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
US8680536B2 (en) | 2012-05-23 | 2014-03-25 | Hrl Laboratories, Llc | Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices |
US10700201B2 (en) | 2012-05-23 | 2020-06-30 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
US9000484B2 (en) * | 2012-05-23 | 2015-04-07 | Hrl Laboratories, Llc | Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask |
US9373689B2 (en) | 2012-12-28 | 2016-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor and method of forming the same |
JP6536318B2 (ja) * | 2015-09-24 | 2019-07-03 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP7300840B2 (ja) * | 2019-02-04 | 2023-06-30 | ローム株式会社 | 窒化物半導体装置の製造方法 |
WO2020252623A1 (zh) * | 2019-06-17 | 2020-12-24 | 苏州晶湛半导体有限公司 | 一种半导体结构及其制造方法 |
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JPS609173A (ja) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | 電界効果型半導体装置の製造方法 |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
TW200715570A (en) * | 2005-09-07 | 2007-04-16 | Cree Inc | Robust transistors with fluorine treatment |
US7408208B2 (en) * | 2006-03-20 | 2008-08-05 | International Rectifier Corporation | III-nitride power semiconductor device |
JP5276849B2 (ja) * | 2008-01-09 | 2013-08-28 | 新日本無線株式会社 | 窒化物半導体装置の製造方法 |
JP5608969B2 (ja) * | 2008-10-20 | 2014-10-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
-
2010
- 2010-08-09 JP JP2010178778A patent/JP5655424B2/ja active Active
-
2011
- 2011-08-08 US US13/204,968 patent/US20120091508A1/en not_active Abandoned
- 2011-08-09 TW TW100128316A patent/TWI433319B/zh active
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Publication number | Publication date |
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JP2012038966A (ja) | 2012-02-23 |
TWI433319B (zh) | 2014-04-01 |
US20120091508A1 (en) | 2012-04-19 |
TW201216472A (en) | 2012-04-16 |
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