JP2008166469A - 窒化物半導体装置とその製造方法 - Google Patents
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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Abstract
ゲート耐圧の高い窒化物半導体装置、及びその製造方法を提供する。
【解決手段】
窒化物半導体装置は、窒化物半導体層をエピタキシャル成長できる基板と、基板上に形成され、窒化物半導体のチャネル層を含む半導体積層と、半導体積層上に形成され、チャネル層にオーミック接触する、ソース電極及びドレイン電極と、半導体積層上に形成された絶縁層であって、ゲート電極接触部に開口を有し、開口から離れた領域に表面が平坦な全厚領域を有し、開口端の側壁が全厚の一部の厚さまで急峻に立ち上がる絶縁膜と、開口で前記半導体積層に接し、両側で厚さが増加した部分まで延在するT型ゲート電極と、を有する。
【選択図】 図1
Description
窒化物半導体層をエピタキシャル成長できる基板と、
前記基板上に形成され、窒化物半導体のチャネル層を含む半導体積層と、
前記半導体積層上に形成され、前記チャネル層にオーミック接触する、ソース電極及びドレイン電極と、
前記半導体積層上に形成された絶縁層であって、ゲート電極接触部に開口を有し、開口から離れた領域に表面が平坦な全厚領域を有し、開口端の側壁が全厚の一部の厚さまで急峻に立ち上がる絶縁膜と、
前記開口で前記半導体積層に接し、両側で厚さが増加した部分まで延在するT型ゲート電極と、
を有する窒化物半導体装置
が提供される。
(a)基板上に窒化物半導体層を含む半導体積層をエピタキシャル成長する工程と、
(b)前記半導体積層にオーミック接触するソース電極、ドレイン電極を形成する工程と、
(c)前記半導体積層上に絶縁保護層を形成する工程と、
(d)レジストマスクを用いて前記絶縁保護層をエッチングして、開口端において急峻な勾配で厚さの一部分立ち上がり、開口端から離れた位置で全厚を実現する開口部を形成する工程と、
(e)前記開口部内で前記半導体積層に接触し、前記絶縁保護層の増加した厚さ部分まで延在するゲート電極を形成する工程と、
を含む窒化物半導体装置の製造方法
が提供される。
11 SiC基板、
12 i型GaN電子走行層、
13 i型AlGaNスペーサ層、
14 n型AlGaN電子供給層、
15 n型GaNキャップ層15、
16 ソース電極、
17 ドレイン電極、
18 SiN層、
19 ゲート電極、
2DEG 2次元電子ガス
Claims (10)
- 窒化物半導体層をエピタキシャル成長できる基板と、
前記基板上に形成され、窒化物半導体のチャネル層を含む半導体積層と、
前記半導体積層上に形成され、前記チャネル層にオーミック接触する、ソース電極及びドレイン電極と、
前記半導体積層上に形成された絶縁層であって、ゲート電極接触部に開口を有し、開口から離れた領域に表面が平坦な全厚領域を有し、開口端の側壁が全厚の一部の厚さまで急峻に立ち上がる絶縁膜と、
前記開口で前記半導体積層に接し、両側で厚さが増加した部分まで延在するT型ゲート電極と、
を有する窒化物半導体装置。 - 前記全厚の一部の厚さは、全厚の20%〜80%の範囲内である請求項1記載の窒化物半導体装置。
- 前記絶縁膜の開口端の厚さが5nm以上である請求項1または2記載の窒化物半導体装置。
- 前記半導体積層が、i型GaN層と、その上に形成されたn型AlGaN層と、その上に形成されたn型GaN層とを含み、前記ソース電極及びドレイン電極は前記n型AlGaN層にオーミック接触し、前記ゲート電極は前記n型GaN層にショットキ接触する請求項1〜3のいずれか1項記載の窒化物半導体装置。
- 前記半導体積層が、n型GaN層を含み、前記ソース電極及びドレイン電極は前記n型GaN層にオーミック接触し、前記ゲート電極は前記n型GaN層にショットキ接触する請求項1〜3のいずれか1項記載の窒化物半導体装置。
- (a)基板上に窒化物半導体層を含む半導体積層をエピタキシャル成長する工程と、
(b)前記半導体積層にオーミック接触するソース電極、ドレイン電極を形成する工程と、
(c)前記半導体積層上に絶縁保護層を形成する工程と、
(d)レジストマスクを用いて前記絶縁保護層をエッチングして、開口端において急峻な勾配で厚さの一部分立ち上がり、開口端から離れた位置で全厚を実現する開口部を形成する工程と、
(e)前記開口部内で前記半導体積層に接触し、前記絶縁保護層の増加した厚さ部分まで延在するゲート電極を形成する工程と、
を含む窒化物半導体装置の製造方法。 - 前記工程(d)が、異方性エッチングと等方性を有するエッチングの組み合わせを含む請求項6記載の窒化物半導体装置の製造方法。
- 前記工程(d)が、第1異方性エッチングと、レジストキュアによりレジスト角部を丸め込む工程と、第2異方性エッチングを含む請求項6記載の窒化物半導体装置の製造方法。
- 前記工程(d)が、第1異方性エッチングと、レジストアッシングによりレジスト端部を後退させる工程と、第2異方性エッチングとを含む請求項6記載の窒化物半導体装置の製造方法。
- 前記工程(c)が絶縁積層を形成する請求項6〜9のいずれか1項記載の窒化物半導体装置の製造方法。
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JP2006353980A JP5114947B2 (ja) | 2006-12-28 | 2006-12-28 | 窒化物半導体装置とその製造方法 |
US11/979,135 US7955984B2 (en) | 2006-12-28 | 2007-10-31 | High speed high power nitride semiconductor device |
KR1020070120043A KR100955249B1 (ko) | 2006-12-28 | 2007-11-23 | 질화물 반도체 소자 및 그 제조 방법 |
CN2007101939939A CN101211969B (zh) | 2006-12-28 | 2007-11-29 | 高速大功率氮化物半导体器件及其制造方法 |
US13/064,748 US8519441B2 (en) | 2006-12-28 | 2011-04-13 | High speed high power nitride semiconductor device |
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JP2016157983A (ja) * | 2016-05-23 | 2016-09-01 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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US7955984B2 (en) | 2011-06-07 |
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US20110186859A1 (en) | 2011-08-04 |
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