JP6173661B2 - Iii−窒化物デバイスの製造方法およびiii−窒化物デバイス - Google Patents
Iii−窒化物デバイスの製造方法およびiii−窒化物デバイス Download PDFInfo
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- 239000000872 buffer Substances 0.000 description 21
- 229910002704 AlGaN Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
a)半導体材料からなる基板と、
b)基板の上でこれと接する活性層のスタックであって、それぞれの活性層はIII−窒化物材料を含み、活性層スタック/基板の界面はスタックと基板との間の遷移として定義されるスタックと、
c)活性層のスタック上のゲートコンタクト、ソースコンタクトおよびドレインコンタクトであって、基板のゲート領域、ソース領域およびドレイン領域は、ゲートコンタクト、ソースコンタクトおよびドレインコンタクトのそれぞれの基板中の突出物であるゲートコンタクト、ソースコンタクトおよびドレインコンタクトと、
d)基板の裏側から活性層のスタックの下層まで延びる、即ち下層が裏側に向かって露出する基板中のトレンチであって、トレンチは好適にはドレイン領域を完全に囲み、少なくともドレイン領域は活性層スタック/基板界面を横切ってゲート領域およびソース領域から電気的に分離され、ドレイン領域に向かうゲート領域の端と、ゲート領域に向かうドレイン領域の端との間に配置され、基板のドレイン領域は本質的に半導体材料から形成されるトレンチと、を含むIII−窒化物デバイスを開示する。
a)半導体材料からなる基板を提供する工程と、
b)基板上に活性層のスタックを形成する工程であって、それぞれの活性層はIII−窒化物材料を含む工程と、
c)活性層のスタックの上にソースコンタクト、ゲートコンタクト、およびドレインコンタクトを形成する工程であって、基板のゲート領域、ソース領域、およびドレイン領域は、それぞれゲートコンタクト、ソースコンタクト、およびドレインコンタクトの基板中への突起物である工程と、
d)(活性層のスタックと接する基板の側と対向する)基板の裏側から活性層のスタックの下層まで延びるトレンチを基板中に形成する工程であって、このトレンチは好適には完全にドレイン領域を囲み、ドレイン領域はゲート領域とソース領域から電気的に分離され、ドレイン領域に向かうゲート領域の端と、ゲート領域に向かうドレイン領域の端との間に配置され、基板のドレイン領域が実質的に半導体材料からなるような幅を有する工程と、を含む。もし活性層スタック/基板界面を横切って、ゲート領域およびソース領域からドレイン領域が電気的に分離される場合、これは、ドレインコンタクトが活性層スタック/基板界面を横切って、ゲートコンタクトおよびソースコンタクトから分離されることを意味する。
Claims (8)
- III−窒化物デバイスの製造方法であって、
a)半導体材料からなる基板を提供する工程と、
b)基板上に活性層のスタックを形成する工程であって、それぞれの活性層はIII−窒化物材料を含み、活性層スタック/基板の界面はスタックと基板との間の遷移として定義される工程と、
c)活性層のスタックの上にソースコンタクト、ゲートコンタクト、およびドレインコンタクトを形成する工程であって、基板のゲート領域、ソース領域、およびドレイン領域は、それぞれゲートコンタクト、ソースコンタクト、およびドレインコンタクトの基板中への突起物である工程と、
d)基板の裏表面からエッチングを開始し、活性層のスタックの下層まで到達してエッチングを終了することでトレンチを形成する工程であって、裏側は活性層のスタックと接する基板の側と対向し、トレンチは完全にドレイン領域を囲み、ドレイン領域は活性層スタック/基板界面を横切ってゲート領域とソース領域から電気的に分離され、ドレイン領域に向かうゲート領域の端と、ドレイン領域の端との間に配置され、基板のドレイン領域が実質的に半導体材料からなるような幅を有する工程と、を含む方法。 - 更に、電気的に絶縁で熱的に伝導性の材料でトレンチを充填する工程を含む請求項1に記載の方法。
- 更に、基板の裏側の上に第1保護層を堆積する工程を含み、第1保護層は電気的に絶縁で熱的に伝導性の材料を含む請求項1または2のいずれかに記載の方法。
- 第1保護層は、トレンチを形成するためのマスク層として機能する請求項3に記載の方法。
- 更に、ソースコンタクト、ゲートコンタクト、およびドレインコンタクトを覆いこれと接する第2保護層を堆積する工程を含み、第2保護層は電気的に絶縁で熱的に伝導性の材料を含む請求項1〜4のいずれかに記載の方法。
- トレンチは、活性層のスタックの厚さ以上で、ドレイン領域に向かうゲート領域の端とドレイン領域の端との間の距離以下の幅を有する請求項1〜5のいずれかに記載の方法。
- 電気的に絶縁で熱的に伝導性の材料は、AlN、SiC、ダイアモンド、BN、およびそれらの組み合わせからなるグループから選択される請求項1〜6のいずれかに記載の方法。
- 電気的に絶縁で熱的に伝導性の材料は、AlNである請求項1〜7のいずれかに記載の方法。
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US201161499981P | 2011-06-22 | 2011-06-22 | |
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US9773884B2 (en) * | 2013-03-15 | 2017-09-26 | Hrl Laboratories, Llc | III-nitride transistor with engineered substrate |
US20150021666A1 (en) * | 2013-07-17 | 2015-01-22 | Taiwan Semiconductor Manufacturing Company., Ltd. | Transistor having partially or wholly replaced substrate and method of making the same |
JP2015056556A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
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US20180145171A1 (en) * | 2016-11-23 | 2018-05-24 | Microchip Technology Incorporated | Field Effect Transistor (FET) or Other Semiconductor Device with Front-Side Source and Drain Contacts |
CN109378346A (zh) * | 2018-08-28 | 2019-02-22 | 西安电子科技大学 | 一种基于场板的GaN基肖特基势垒二极管 |
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