CN103582947A - 具有非线性元件的切换器件 - Google Patents
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- 230000008859 change Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000015654 memory Effects 0.000 claims description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 230000009466 transformation Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 16
- 230000006399 behavior Effects 0.000 description 15
- 238000004088 simulation Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 238000012423 maintenance Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005323 electroforming Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- PWPJGUXAGUPAHP-UHFFFAOYSA-N lufenuron Chemical compound C1=C(Cl)C(OC(F)(F)C(C(F)(F)F)F)=CC(Cl)=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F PWPJGUXAGUPAHP-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
- H03M7/30—Compression; Expansion; Suppression of unnecessary data, e.g. redundancy reduction
- H03M7/60—General implementation details not specific to a particular type of compression
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Abstract
一种切换器件,包括:衬底;形成在所述衬底上的第一电极;形成在所述第一电极上的第二电极;设置在所述第一与第二电极之间的切换介质;以及设置在所述第一与第二电极之间的非线性元件,所述非线性元件串联地电耦接至所述第一电极和所述切换介质。所述非线性元件配置成在被施加大于阈值的电压时从第一电阻状态改变为第二电阻状态。
Description
技术领域
本发明涉及切换器件。更具体来说,本发明提供一种用于形成非易失性电阻型切换存储器器件的结构和方法,所述结构和方法的特征在于抑制在低偏置下的电流并且具有高的经测得的打开/关闭(ON/OFF)电阻比。
背景技术
半导体器件的成功主要源自于高密度的晶体管微小化工艺。但是,随着场效应晶体管(FET)的大小开始小于100nm,开始出现诸如短沟道效应的问题,妨碍了器件的正常操作。另外,此类亚100nm器件大小会导致亚阈值斜率没有按比例缩放以及增大的功耗。通常认为,诸如熟知的闪存存储器的基于晶体管的存储器可能会在十年内达到规模的极限。快闪存储器是非易失性存储器的一种类型。
已经在研发其他类型的非易失性随机存取存储器(RAM)器件来作为下一代存储器器件,诸如铁电型RAM(Fe RAM)、磁阻型RAM(MRAM)、有机RAM(ORAM)以及相变RAM(PCRAM)等。这些器件经常需要新材料和器件结构来与基于硅的器件耦接以形成存储器单元,但是这些材料和器件结构缺乏一种或多种关键属性。例如,Fe-RAM和MRAM器件具有快速切换特性和良好的编程耐久性,但是它们的制造工艺并不是与CMOS兼容的并且大小通常较大。PCRAM器件的切换使用的是焦耳加热,而这样必然带来高的功耗。有机RAM或ORAM与基于大体积硅的制造工艺不兼容,而且器件可靠性通常很差。
随着存储器器件集成度提高,元件大小减小同时在给定区域中的元件密度提高。在这种情况下,暗电流或漏电流就不是简单的问题了,其中,漏电流对于一个读取操作会返回一个错误的结果,或者会导致在单元中的不希望的状态改变。漏电流的问题在两端器件(two-terminal devices)中尤其严重,在所述两端器件中多个存储器单元会通过互连接的顶部电极和底部电极形成漏电路径。
用于抑制切换器件中的漏电流的常规方法包括将垂直二极管耦接至存储器元件。但是,该外部二极管方法具有若干缺陷。一般来说,二极管制造工艺是高温工艺,通常在高于500摄氏度的温度下进行。因为大多数二极管依赖于P/N结,从而很难将二极管高度缩放为实现具有所要的纵横比的存储器和二极管结构。最后,常规二极管仅与单极切换器件兼容,而不与双路双极器件兼容。因此,需要使高度集成的存储器具有一种强健的且可缩放的方法和结构,而不会受到漏电流的不良影响。
发明内容
本发明大体涉及切换器件。更具体来说,本发明提供一种使用电阻型切换来形成非易失性存储器单元的结构和方法。应认识到,根据本发明的实施例具有更加宽广的应用范围。
在一个特定实施例中,一种切换器件,包括:衬底;在该衬底上形成的第一电极;在该第一电极上形成的第二电极;在该第一与第二电极之间设置的切换介质;以及在该第一与第二电极之间设置的非线性元件,该非线性元件串联地电耦接至该第一电极和该切换介质。该非线性元件被配置成在施加了大于阈值的电压时从第一电阻状态改变为第二电阻状态。
在一实施例中,该切换器件包括RRAM。
在一实施例中,该切换器件包括PCRAM。
本发明较之于常规技术具有多种优势。例如,本发明的实施例能够实现一种高密度的非易失性存储器,其具有高切换速度、低漏电流特性以及高的器件良率的特征。视实施例而定,可以达成上述特征中的一个或多个。在本说明书中的下文将更详细描述这些和其他优势。
附图说明
下文将结合附图来描述示例性实施例,其中相似的附图标记表示相似元件,其中:
图1所示为根据本发明的实施例的非易失性存储器器件,其包括具有底部电极、切换介质和顶部电极的存储器单元;
图2所示为电阻型存储器单元的I-V电阻切换特性;
图3A所示为两端存储器单元,通过将编程电压VPROGRAM施加给顶部电极,其被置于打开状态;
图3B所示为两端存储器单元,通过将擦除电压VERASE施加给顶部电极,其被置于关闭状态;
图4所示为含有漏电流的存储器阵列;
图5所示为根据本发明的实施例的包括非线性元件的非易失性存储器单元;
图6A所示为接受电压扫描的数字非线性元件的I-V特性;
图6B所示为与接受正电压扫描的初始处于关闭状态的数字非线性元件相组合的开关的I-V特性;
图6C所示为与接受负电压扫描的初始处于关闭状态的数字非线性元件相组合的开关的I-V特性;
图6D所示为与接受正电压扫描的初始处于打开状态的数字非线性元件相组合的开关的I-V特性;
图6E所示为与接受负电压扫描的初始处于打开状态的数字非线性元件相组合的开关的I-V特性;
图7A所示为接受正电压扫描的模拟非线性元件的I-V特性;
图7B所示为与接受正电压扫描的初始处于关闭状态的模拟非线性元件相组合的开关的I-V特性;
图7C所示为与接受负电压扫描的初始处于关闭状态的模拟非线性元件相组合的开关的I-V特性;
图7D所示为与接受正电压扫描的初始处于打开状态的模拟非线性元件相组合的开关的I-V特性;以及
图7E所示为与接受负电压扫描的初始处于打开状态的模拟非线性元件相组合的开关的I-V特性。
具体实施方式
本发明大体涉及一种存储器器件。更具体来说,本发明提供一种具有非线性元件的电阻型切换单元的结构和方法。切换单元可用在电阻型随机存取存储器(RRAM)或任意高度集成器件中。应认识到,本发明的实施例可以具有更加宽广的应用范围。尽管是参考特定实施例来描述本发明,但是这些实施例仅用于说明的目的,不应被理解为限制性。
RRAM通常是一种两端器件,其中切换元件夹插在顶部电极与底部电极之间。通过将电压施加给电极或者是施加电流通过该切换元件来改变该切换元件的电阻。电阻型切换可以是双极或单极的。在双极切换中,该切换元件的电阻的变化量取决于基于电流或电压的所施加电信号的极性和幅度。在单极切换的情况下,该切换元件的电阻的改变仅取决于所施加的电压或电流的幅度,并且通常是在该切换元件内焦耳加热的结果。本发明的实施例是针对使用双极切换的两端RRAM器件来解释的,但是不限于此。如本文中所使用,术语“RRAM”或“电阻型存储器单元”指代一种使用切换介质的存储器单元或存储器器件,该切换介质的电阻可以通过施加电信号来加以控制,而切换介质的铁电性、磁化和相位没有改变。本发明不限于以RRAM来实施,例如,本发明可以使用相变RAM来实施。
图1所示为在非易失性存储器器件(例如,半导体存储器芯片)中的电阻型存储器单元100。根据本发明的实施例,该存储器单元包括底部电极102、切换介质104以及顶部电极106。切换介质104表现出的电阻能够通过使用恰当的控制电路来选择性地设置成各种值以及重设。在本实施例中,存储器单元100为两端电阻型存储器器件,例如RRAM。诸如“顶部”和“底部”的术语仅出于说明性的目的且不应被理解为限制性。
在本实施例中,存储器单元100为基于非晶硅的电阻型存储器单元,并且使用非晶硅(a-Si)来作为切换介质104。随着切换介质104内的导电丝(conductive filament)由于施加给电极的电压而形成或去除(retrieval),切换介质104的电阻发生改变。在一个实施例中,切换介质104基本上不含杂质。在另一个实施例中,切换介质104为掺杂了硼的a-Si。顶部电极106为含有银(Ag)的导电层,并且在a-Si结构中充当形成离子的导电丝的来源。尽管在本实施例中使用银,但是应理解,顶部电极106可以形成自各种其他适宜金属,诸如金(Au)、镍(Ni)、铝(Al)、铬(Cr)、铁(Fe)、锰(Mn)、钨(W)、钒(V)和钴(Co)。在某些实施例中,底部电极102为纯金属、掺杂了硼的电极,或其他p型多晶硅或硅-锗,并与a-Si结构的下端面相接触。在一个实施例中,存储器单元100被配置成例如通过调整外部电路电阻来存储多于一个位的信息,如在2009年10月9日申请的题为“电阻可调的基于硅的纳米级电阻型器件”(Silicon-Based Nanoscale Resistive Device with AdjustableResistance)的申请案No.12/575,921中所解释的那样,该案以引用的方式全文合并于此。
图2所示为根据本发明的实施例的存储器单元100的电阻切换特性。切换介质104显示出双极切换效应。切换介质104的电阻的变化取决于经由顶部电极106和底部电极102施加给切换介质104的电压信号的极性和幅度。当施加一个等于或大于阈值编程电压(也被称作“编程电压”)VPROGRAM的正电压时,存储器单元100改变成打开状态(低电阻状态)。在一个实施例中,视用于切换介质104和顶部电极106的材料而定,该编程电压处于1伏特至5伏特的范围中。在另一个实施例中,该编程电压处于1伏特至3伏特的范围中。当施加一个等于或大于阈值擦除电压(也被称作“擦除电压”)VERASE的负电压时,存储器单元100被切换回到关闭状态(高电阻状态)。在一个实施例中,该擦除电压处于-2伏特至-5伏特的范围中。如果所施加的电压介于两个阈值电压VPROGRAM与VERASE之间,则单元的状态不受影响,会启用低电压读取过程。一旦存储器单元100被设置为特定的电阻状态,即使失去电力供应,存储器单元100还能将信息保留一定时期(或保留时间)。
图2所示为通过非整流存储器单元100的切换操作的电流-电压(I-V)关系。当施加给顶部电极106的电位相对于底部电极102为正电位时,电流从顶部电流106流向底部电极102。反之,如果施加给顶部电极106的电位相对于底部电极102为负电位,电流朝相反方向流动。
图3A和图3B所示为根据本发明的实施例的存储器单元100在打开和关闭状态期间的切换机制。切换介质104的切换原理是基于在施加给存储器单元100的底部电极102和顶部电极106的编程电压和擦除电压的作用下,在切换介质104的导电丝区域中的一个或多个导电丝的形成和去除。
图3A所示为通过将编程电压VPROGRAM施加给顶部电极106而置于打开状态的存储器单元100。由a-Si制成的切换介质104被设置在底部电极102与顶部电极106之间。切换介质104的上部部分包括从顶部电极延伸到高出底部电极102大约10nm处的金属化区域(或导电路径)102。在将略大于稍后的切换电压的电压(例如,3~5V)施加给顶部电极106的电铸工艺期间,形成金属化区域302。这样的大电压导致电场诱发金属离子从顶部电极106朝向底部电极102扩散,从而形成连续导电路径312。切换介质104的下部部分限定出导电丝区域304,其中在电铸工艺之后施加编程电压VPROGRAM时形成导电丝310。连续导电路径312和导电丝310也可以在电铸工艺一起形成。导电丝310包括一系列金属粒子,当所施加的编程电压VPROGRAM提供足够的活化能将大量的金属粒子从金属化区域302朝向底部电极102推动时,这些金属粒子被捕集在切换介质104的下部部分中的缺位处。
人们认为导电丝310包括金属粒子的集合,这些金属粒子通过非导电切换介质104彼此分离并且没有定义连续导电路径,因而与金属化区域302中的连续导电路径312不同。导电丝310延伸约2~10nm,这视实施方案而定。在打开状态下的导电机制为电子穿隧通过导电丝310中的金属粒子。单元电阻主要是金属粒子306与底部电极102之间的穿隧电阻。金属粒子306是在导电丝区域304中最接近底部电极102的金属粒子,同时也是在打开状态下在导电丝区域304中的最后一个金属粒子。
图3B所示为通过将擦除电压VERASE施加给顶部电极106而置于关闭状态的存储器单元100。该擦除电压施加足够的电磁力以逐出被捕集在a-Si的缺位中的金属粒子,并从导电丝区域304恢复导电丝310的至少一部分。在关闭状态下最接近底部电极102的金属粒子308与底部电极102分开一段距离,该距离大于在打开状态下金属粒子306与底部电极102的距离。在金属粒子308与底部电极102之间的增加的距离将存储器单元100置于相对于打开状态的高电阻状态中。在一个实施例中,在打开/关闭状态之间的电阻比处于从10E3到10E7的范围中。存储器单元100在打开状态下的行为像电阻器而在关闭状态下的行为像电容器(也就是说,切换介质104在关闭状态下不能传导任何有意义的电流,其行为像是介电质)。在一项实施方案中,其电阻在打开状态下为10E5欧姆而在关闭状态下为10E10欧姆。在另一项实施方案中,其电阻在打开状态下为10E4欧姆而在关闭状态下为10E9欧姆。在又一项实施方案中,其电阻在关闭状态下至少为10E7欧姆。
图4所示为根据本发明的实施例的处于交叉型配置的阵列400中的一部分,在该交叉型配置中,顶部电极和底部电极以正交方式布置。此类交叉型结构的阵列包括多个平行顶部电极和多个平行底部电极,其中切换元件设置在顶部电极与底部电极的相交区域之间。在此类配置中可能会存在某些限制,下文将会对此描述。
图中示出四个存储器单元402、404、406和408。存储器单元404和406共用一个共同的第一顶部电极410,而存储器单元402和408共用一个共同的第二顶部电极418。第一顶部电极410和第二顶部电极418被布置成彼此平行。存储器单元402和404共用一个共同的第一底部电极412而存储器单元406和408共用一个共同的第二底部电极420。第一底部电极412和第二底部电极420在空间上布置成彼此平行。此外,各个顶部电极配置成与各个底部电极不平行。
为了确定具有高电阻状态的目标单元的状态,施加电压并测量流过该目标单元的电流。如果交叉型阵列中的一些单元处于低电阻状态,那么施加给目标单元的电压会导致漏电流流过非目标单元来替代。在这种情况下,导致泄露的各个单元(包括目标单元在内)通过共用的电极相互连接。该漏电流能够通过这些非目标单元形成电流路径,常称为潜行电流或潜行电流路径。此类潜行电流会导致切换阵列中的非期望行为。
例如,在示例性阵列中,单元402、404和406处于低电阻打开状态,而单元408处于高电阻关闭状态。因为打开状态的特征为低电阻,所以可以形成潜行路径416,使得有电流流过单元402、404和406。因而,当将读取电压施加给目标单元408时,沿潜行路径416流动的漏电流可能会导致打开状态结果的错误读取。
在一些实施例中,潜行路径可以非常短,仅存在于少至两个正向偏置的单元和一个反向偏置的单元中。此外,一旦开始进行,潜行路径可以通过打开状态下的单元遍及整个阵列来传播。在切换阵列中的最常见的导电路径为共用的顶部和底部电极。潜行路径416仅仅是使漏电流通过阵列的潜行路径的一个实例。
为了减轻在切换阵列中由于漏电流所导致的问题,可以在电阻型切换器件中包括非线性元件(NLE)。NLE一般可以分成两种类型:表现出类数字行为的NLE,即“数字NLE”;以及表现出类模拟行为的NLE,即“模拟NLE”,对于这两种类型下文将分别加以描述。数字行为和模拟行为的类型并非严格定义的,因此对于特定的NLE可以具有特征为数字行为和模拟行为两种特性,或者是介于这两者之间的某种行为特性。在其最基本的形式中,NLE是对于电压具有非线性响应(例如,具有非线性I-V关系)的元件。在大多数实施例中,该关系的特征为在低幅度电压下的高电阻状态以及在高幅度电压下的低电阻状态,其中从高电阻状态到低电阻状态的转变为非线性的。与切换介质不同,NLE不具有存储器特性,当电压不再施加时NLE便返回到最初状态。适宜于抑制漏电流的NLE的特征为低偏置下的高电阻状态以及高偏置下的低电阻状态,以及在这两个状态之间的阈值。
在一个实施例中,NLE为两端器件,其表现出明显的阈值效应,使得在低于第一电压的电压下所测得的电阻显著高于在高于第二电压的电压下所测得的电阻。在一个典型实施例中,在低于第一电压的电压下的电阻是在高于第二电压的电压下的电阻是100多倍。在一些实施例中,第一电压和第二电压是不同的,并且通常分别称作保持电压VHOLD和阈值电压VTH。在其他实施例中,第一电压和第二电压可以相同。在各个实施例中,这些关系可以存在于电压的两极中,或仅存在于一个极中,并且该NLE可以是单一材料或者是由不同材料构成的多层。
如图5所示,为了减轻在存储器单元500中的漏电流的效应,NLE504串联电连接至顶部电极508、底部电极502以及切换介质506。NLE504可以设置在底部电极502与切换介质506之间。在其他实施例中,该NLE设置在顶部电极508与切换介质506之间。在各种半导体工艺期间,半导体器件的下部部分可能会经受高温,从而位于堆叠结构下部的NLE可以设计成比离衬底较远的NLE更能承受高温。
数字NLE的行为的特征为在某些电压下的电流的急剧变化,这些电压可以被称作阈值电压。图6A中示出此类行为,其展示了在一个实施例中关于未耦接到电阻型切换器件的NLE上的电流的电压扫描的结果。由于将正偏置电压施加给该NLE,所以该NLE处于以高电阻为特征的电阻状态,直到其达到阈值电压VTH1。在达到该阈值之后,该NLE将保持其导电状态,直到所施加的电压下降到保持电压VHOLD1以下。因而,由于被施加高于VTH1的电压而处于导电状态的NLE将继续具有低电阻,只要将高于VHOLD1的电压供应给该NLE即可,一旦停止该供应,该NLE会回到其最初的高电阻状态。NLE不具有存储特性,每次自最初状态起施加电压时,均会经历相同的I-V关系。
再次参看图6A,当施加比阈值电压VTH2更负的负偏置电压时,会经历急剧的转变,NLE中的电阻会显著减小。该NLE会保持其低电阻状态直到该电压变得没有比值VHOLD2更负为止,在该点处,该NLE将回到其最初的高电阻状态。尽管在图6A中所示的实施例中在正偏置表现与负偏置表现之间是对称的I-V行为,但是在其他实施例中该关系并非是对称的。
图6B至图6E所示为NLE(在此情况中为数字NLE)耦接至存储器单元(“组合器件”)的实施例中的I-V关系。存储器单元500为此类组合器件的实例。如果在诸图中所示的存储器单元并未耦接至该NLE,那么它将具有图2所述的I-V响应。转到图6B,示出了显示将单元从初始关闭状态切换到打开状态的编程操作的I-V曲线。为了在单元中建立导电打开状态,施加高于VPROGRAMC的电压。VPROGRAMC为用于组合器件的编程电压,其将该组合器件从关闭状态切换到打开状态。VHOLDC1为组合器件的保持电压,其基本上以与上述VHOLD1相同的方式来操作。在一个优选实施例中,VHOLD1低于VTH1,而VTH1低于VPROGRAM。
在存储器单元、NLE与组合器件中的I-V特性之间的关系也可以用方程式来表示。这些方程式假定该NLE和该切换介质两者在经受阈值电压时即刻切换(例如,几纳秒至几百纳秒)。除了上文给出的定义以外,还设计出以下变量:
RMOFF=存储器元件的关闭状态电阻
RMON=存储器元件的打开状态电阻
RNOFF=NLE的关闭状态电阻
RNON=NLE的打开状态电阻
使用这些变量,在组合器件的保持电压与NLE的保持电压之间的关系可以表达为:
关于组合器件的编程电压的值可以表达为:
其中,“small”(小)表示在一个集合中的两个值中的较小值,“large”(大)表示在一个集合中的两个值中的较大值。在大多数实施例中,VPROGRAM显著高于VTH1,而VPROGRAMC与VPROGRAM相似。
图6C所示为同一开关在关闭状态下的负电压扫描的结果。因为其已经处于关闭状态下,所以负电压不会引起擦除操作,该单元仍保持在高电阻关闭状态。
图6D和图6E所示为组合器件(例如,存储器单元500)的I-V关系,其中存储器单元初始处于低电阻打开状态。图6D所示为一个读取操作,其中读取电压必须大于阈值电压VTHC1以返回一个准确的读取值。随着读取电压下降为低于保持电压VHOLDC1,在该单元中的电阻实质地增加。该组合器件的阈值电压通过如下公式与该NLE的阈值电压相关:
因而,该组合器件的读取阈值电压与该NLE的阈值电压大致相同,即VTHC1≈VTH1。
相似地,如图6E所见,擦除操作必须克服第二阈值VTHC2才能使电流流过该单元,并且在电压VERASEC下该开关改变为高电阻关闭状态。与正阈值电压类似,该组合器件的负阈值电压与该NLE的负阈值电压大约相同。在组合器件中的擦除电压VERASEC的值可以表达为:
在离散器件的负阈值电压与组合器件的负阈值电压之间的关系可以表达为:
因此,在大多数实施例中,VTHC2≈VTH2。
数字NLE的各个实施例可以由多种不同的材料制成。例如,数字NLE可以是阈值器件,诸如经受场驱动的金属绝缘(Mott)转变的膜。此类材料在本领域中是公知的,包括VO2和掺杂半导体。其他阈值器件包括由于在金属氧化物和其他非晶膜中观测到的电子机制而经受电阻切换的材料,或者是其他易失性电阻型切换器件,诸如基于在氧化物、氧化物异质结构或非晶膜中的阴离子或阳离子运动的器件。数字NLE也可以是表现出软击穿行为的击穿元件的形式,诸如SiO2、HfO2以及其他介电质。在2010年6月29日提交的题为“用于非易失性存储器的电阻型切换的整流元件及其方法”(Rectification Element for Resistive Switching for Non-volatile Memory Deviceand Method)的申请案No.12/826,653中进一步详细描述此类击穿元件的实例,并且该案以引用的方式全文合并于此。
如本领域所知,针对不同实施例,可以通过改变用于NLE和存储器单元的形式和材料来调整阈值电压、保持电压、编程电压以及擦除电压的精确值。在各个实施例中,用于该NLE的阈值电压可以大致与保持电压、编程电压或两者均相同。在其他实施例中,用于该NLE的阈值电压可以超过电阻型切换器件的编程电压和擦除电压。
模拟NLE与数字NLE的不同之处在于,当电流开始流过元件时,其I-V关系的特征在于转变更趋缓和。如图7A所示,示出了模拟NLE对于电压扫描的响应,电流转变遵循类指数曲线。因此,转变过程或阈值不如数字NLE那样急剧。对于正偏置值和负偏置值,实质电流开始流过模拟NLE的阈值电压值被分别指定为VA和VB。在模拟NLE与数字NLE之间的另一显著差异在于模拟NLE不会经受像数字NLE那样的滞后保持电压特性。
图7B至图7E所示为具有模拟NLE的组合器件的I-V特性。如图7B所示,当将编程电压VPROGRAMC施加给开关初始处于关闭状态的组合器件时,开关改变为低电阻打开状态。VPROGRAMC大约等于NLE的VA与开关的VPROGRAM(如图2所示)的总和,即VPROGRAMC≈VA+VPROGRAM。因此,具有模拟NLE的组合器件的编程电压通常高于单独的切换元件的编程电压。
现在参见图7C,示出在关闭状态下的组合器件的负电压扫描。因为开关已处于关闭状态,所以该负电压不会引发状态改变,且该开关仍保持在高电阻状态。
图7D所示为在处于打开状态的组合开关中的读取操作的结果。在本发明中,VAC<VREAD<VPROGRAMC。因为开关已处于低电阻打开状态,所以在高于阈值电压VAC的电压下的电流显示出低电阻特征。电路可以检测出该电流,从而产生正读取结果。在大多数实施例中,VA的值不受切换装置影响,因此通常为VAC≈VA。
图7E所示为在组合器件中的擦除操作的I-V曲线。为了将该开关从打开状态改变为关闭状态,将VERASEC的电压施加给该组合器件,从而增加该开关的电阻。完成在组合器件中的擦除操作所需的电压通常为离散开关的擦除值和模拟NLE的阈值的总和,即VERASEC≈VERASE+VB。
模拟NLE可以是表现出上述行为的任何元件。适宜材料的实例包括穿通二极管、齐纳二极管、碰撞电离(或称雪崩)元件,以及诸如穿隧阻挡层的穿隧元件。此类元件可以使用标准制造技术来加以制造。
在大多数实施例中,∣VA,VB∣<∣VPROGRAM,VERASE∣。如本领域所知,可以针对不同的实施例,通过改变用于NLE和存储器单元的形式和材料来调整VA和VB的精确阈值、编程电压和擦除电压。在各个实施例中,NLE的阈值电压可以与编程电压大约相同。在其他实施例中,阈值电压可以超过编程电压和擦除电压。
在其他实施例中,电阻型切换单元可以配置成保持多个电阻状态。也就是说,与配置成打开和关闭的二元状态不同,单元可以保持多个电阻状态。此类开关的阵列关于漏电流具有相同的限制条件,并且相似地会从包括NLE中获益。
本文所描述的实例和实施例仅出于说明性目的,且并非意图为限制性。本领域技术人员在本发明启发之下可以想到各种修改和替代,这些修改和替代应包括在本发明的精神和权限内以及所附权利要求书的范围内。
Claims (11)
1.一种切换器件,包括:
衬底;
形成在所述衬底上的第一电极;
形成在所述第一电极上的第二电极;
设置在所述第一电极与所述第二电极之间的切换介质;以及
设置在所述第一电极与所述第二电极之间的非线性元件,所述非线性元件串联地电耦接至所述第一电极和所述切换介质,所述非线性元件配置成在被施加大于阈值电压的电压时从第一电阻状态改变为第二电阻状态。
2.根据权利要求1所述的器件,其中,所述切换器件包括两端存储器单元。
3.根据权利要求2所述的器件,其中,所述两端存储器单元为RRAM。
4.根据权利要求1所述的器件,其中,所述非线性元件的所述第一电阻状态与所述第二电阻状态之间的转变为急剧的类数字状态改变。
5.根据权利要求1所述的器件,其中,所述第一电极或所述第二电极包含银。
6.根据权利要求1所述的器件,其中所述非线性元件为穿通二极管、齐纳二极管,或穿隧阻挡层。
7.根据权利要求1所述的器件,其中,所述非线性元件的所述第一电阻状态与所述第二电阻状态之间的转变的特征为在电流与电压之间的指数关系。
8.根据权利要求1所述的器件,其中,所述切换器件包括PCRAM。
9.根据权利要求1所述的器件,其中,所述切换介质包含非晶硅。
10.根据权利要求1所述的器件,其中,所述非线性元件是VO2膜、易失性电阻型切换器件以及击穿元件中的一种。
11.根据权利要求1所述的器件,其中,所述第一电阻状态下的电阻是所述第二电阻状态下的电阻的至少100倍。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465989A (zh) * | 2014-12-26 | 2015-03-25 | 中国科学院微电子研究所 | 三端原子开关器件及其制备方法 |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US8274812B2 (en) | 2010-06-14 | 2012-09-25 | Crossbar, Inc. | Write and erase scheme for resistive memory device |
US9437297B2 (en) | 2010-06-14 | 2016-09-06 | Crossbar, Inc. | Write and erase scheme for resistive memory device |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
JP2012089567A (ja) * | 2010-10-15 | 2012-05-10 | Toshiba Corp | 不揮発性抵抗変化素子 |
US8767441B2 (en) | 2010-11-04 | 2014-07-01 | Crossbar, Inc. | Switching device having a non-linear element |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
JP2013004541A (ja) * | 2011-06-10 | 2013-01-07 | Toshiba Corp | 半導体記憶装置 |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9058865B1 (en) | 2011-06-30 | 2015-06-16 | Crossbar, Inc. | Multi-level cell operation in silver/amorphous silicon RRAM |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US9729155B2 (en) | 2011-07-29 | 2017-08-08 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US10056907B1 (en) | 2011-07-29 | 2018-08-21 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
CN102368536A (zh) * | 2011-11-25 | 2012-03-07 | 北京大学 | 一种阻变式存储器单元 |
US8971088B1 (en) | 2012-03-22 | 2015-03-03 | Crossbar, Inc. | Multi-level cell operation using zinc oxide switching material in non-volatile memory device |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US10096653B2 (en) | 2012-08-14 | 2018-10-09 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
JP6230090B2 (ja) * | 2013-01-28 | 2017-11-15 | 国立研究開発法人物質・材料研究機構 | 多機能電気伝導素子 |
US9165246B2 (en) * | 2013-01-29 | 2015-10-20 | Hewlett-Packard Development Company, L.P. | Neuristor-based reservoir computing devices |
US9153624B2 (en) * | 2013-03-14 | 2015-10-06 | Crossbar, Inc. | Scaling of filament based RRAM |
US9530822B2 (en) | 2013-04-28 | 2016-12-27 | Alexander Mikhailovich Shukh | High density nonvolatile memory |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
US9425237B2 (en) | 2014-03-11 | 2016-08-23 | Crossbar, Inc. | Selector device for two-terminal memory |
US9672909B2 (en) * | 2014-04-29 | 2017-06-06 | Microchip Technology Incorporated | Memory cell retention enhancement through erase state modification |
US9768234B2 (en) | 2014-05-20 | 2017-09-19 | Crossbar, Inc. | Resistive memory architecture and devices |
US9633724B2 (en) | 2014-07-07 | 2017-04-25 | Crossbar, Inc. | Sensing a non-volatile memory device utilizing selector device holding characteristics |
US10211397B1 (en) | 2014-07-07 | 2019-02-19 | Crossbar, Inc. | Threshold voltage tuning for a volatile selection device |
US10115819B2 (en) | 2015-05-29 | 2018-10-30 | Crossbar, Inc. | Recessed high voltage metal oxide semiconductor transistor for RRAM cell |
US9698201B2 (en) | 2014-07-09 | 2017-07-04 | Crossbar, Inc. | High density selector-based non volatile memory cell and fabrication |
US9685483B2 (en) | 2014-07-09 | 2017-06-20 | Crossbar, Inc. | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process |
US9460788B2 (en) | 2014-07-09 | 2016-10-04 | Crossbar, Inc. | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
TWI553925B (zh) | 2014-09-26 | 2016-10-11 | 華邦電子股份有限公司 | 自整流電阻式隨機存取記憶體記憶胞結構 |
US9425390B2 (en) * | 2014-10-16 | 2016-08-23 | Micron Technology, Inc. | Select device for memory cell applications |
US9607676B2 (en) * | 2015-08-12 | 2017-03-28 | Avalanche Technology, Inc. | Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations |
US10096362B1 (en) | 2017-03-24 | 2018-10-09 | Crossbar, Inc. | Switching block configuration bit comprising a non-volatile memory cell |
US10340453B2 (en) | 2017-05-31 | 2019-07-02 | Arm Ltd. | Forming and operating memory devices that utilize correlated electron material (CEM) |
US10312438B1 (en) * | 2017-12-18 | 2019-06-04 | International Business Machines Corporation | Resistive memory with amorphous silicon filaments |
US20210295143A1 (en) * | 2018-08-07 | 2021-09-23 | Institute of Microelectronics, Chinese Academy of Sciences | Neuron circuit and neural network circuit |
US11532786B2 (en) * | 2018-11-16 | 2022-12-20 | Tetramem Inc. | Large-scale crossbar arrays with reduced series resistance |
US11018188B2 (en) | 2019-06-03 | 2021-05-25 | International Business Machines Corporation | Three-dimensional stackable multi-layer cross-point memory with bipolar junction transistor selectors |
US10903275B2 (en) | 2019-06-03 | 2021-01-26 | International Business Machines Corporation | Three-dimensional stackable multi-layer cross-point memory with single-crystalline bipolar junction transistor selectors |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101501850A (zh) * | 2006-10-16 | 2009-08-05 | 松下电器产业株式会社 | 非易失性存储元件及其制造方法 |
US20100243983A1 (en) * | 2009-03-31 | 2010-09-30 | Tony Chiang | Controlled localized defect paths for resistive memories |
US7830698B2 (en) * | 2008-04-11 | 2010-11-09 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
WO2011008654A1 (en) * | 2009-07-13 | 2011-01-20 | Seagate Technology Llc | Non-volatile memory cell with non-ohmic selection layer |
Family Cites Families (424)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US680652A (en) | 1897-11-08 | 1901-08-13 | Leonard L Elden | Circuit-breaker. |
JPS56134757A (en) | 1980-03-26 | 1981-10-21 | Nec Corp | Complementary type mos semiconductor device and its manufacture |
EP0072221B1 (en) | 1981-08-07 | 1987-11-11 | The British Petroleum Company p.l.c. | Non-volatile electrically programmable memory device |
JPS6188578A (ja) | 1984-10-08 | 1986-05-06 | Nec Corp | 非線形素子 |
DE68926256T2 (de) | 1988-01-07 | 1996-09-19 | Fujitsu Ltd | Komplementäre Halbleiteranordnung |
JPH02181160A (ja) | 1989-01-04 | 1990-07-13 | Fuji Xerox Co Ltd | 電子写真感光体 |
GB8910854D0 (en) | 1989-05-11 | 1989-06-28 | British Petroleum Co Plc | Semiconductor device |
US5614756A (en) | 1990-04-12 | 1997-03-25 | Actel Corporation | Metal-to-metal antifuse with conductive |
JPH0770731B2 (ja) | 1990-11-22 | 1995-07-31 | 松下電器産業株式会社 | 電気可塑性素子 |
US5335219A (en) | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
JPH0590224A (ja) | 1991-01-22 | 1993-04-09 | Toshiba Corp | 半導体装置の製造方法 |
JPH05343316A (ja) | 1991-09-30 | 1993-12-24 | Nec Corp | 半導体装置の製造方法 |
GB9122362D0 (en) | 1991-10-22 | 1991-12-04 | British Telecomm | Resistive memory element |
US5278085A (en) | 1992-08-11 | 1994-01-11 | Micron Semiconductor, Inc. | Single mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor device |
US6002268A (en) | 1993-01-08 | 1999-12-14 | Dynachip Corporation | FPGA with conductors segmented by active repeaters |
JPH06315233A (ja) | 1993-04-28 | 1994-11-08 | Fujitsu Ltd | 電池の充電制御方法 |
US5538564A (en) | 1994-03-18 | 1996-07-23 | Regents Of The University Of California | Three dimensional amorphous silicon/microcrystalline silicon solar cells |
JP2643833B2 (ja) | 1994-05-30 | 1997-08-20 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
KR960005765A (ko) | 1994-07-14 | 1996-02-23 | 모리시다 요이치 | 반도체 장치의 배선형성에 이용하는 무전해 도금욕 및 반도체 장치의 배선성형방법 |
US5457649A (en) | 1994-08-26 | 1995-10-10 | Microchip Technology, Inc. | Semiconductor memory device and write-once, read-only semiconductor memory array using amorphous-silicon and method therefor |
US5499208A (en) | 1994-09-12 | 1996-03-12 | At&T Corp. | Integrated circuit memory device |
DE69510337T2 (de) | 1994-12-22 | 1999-12-16 | Koninkl Philips Electronics Nv | Halbleiterspeicheranordnungen und herstellungsverfahren |
DE69606478T2 (de) | 1995-03-28 | 2000-09-07 | Koninkl Philips Electronics Nv | Verfahren zur herstellung eines halbleiterbauteils mit bicmos schaltkreis |
US5594363A (en) | 1995-04-07 | 1997-01-14 | Zycad Corporation | Logic cell and routing architecture in a field programmable gate array |
US5751012A (en) | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
KR0157342B1 (ko) | 1995-06-09 | 1998-12-01 | 김광호 | 불휘발성 반도체 메모리의 전압 센싱 방법 |
JP4148995B2 (ja) | 1996-06-05 | 2008-09-10 | エヌエックスピー ビー ヴィ | 書き込み可能な不揮発性メモリデバイス及びこのデバイスの製造方法 |
US5998244A (en) | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
KR100206709B1 (ko) | 1996-09-21 | 1999-07-01 | 윤종용 | 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법 |
JP4034380B2 (ja) | 1996-10-31 | 2008-01-16 | 株式会社東芝 | 画像符号化/復号化方法及び装置 |
TW307048B (en) | 1996-11-22 | 1997-06-01 | United Microelectronics Corp | High density read only memory structure and manufacturing method thereof |
US6015997A (en) | 1997-02-19 | 2000-01-18 | Micron Technology, Inc. | Semiconductor structure having a doped conductive layer |
US6133075A (en) | 1997-04-25 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
GB9722149D0 (en) | 1997-10-22 | 1997-12-17 | Philips Electronics Nv | Semiconductior memory devices |
US6143642A (en) | 1997-12-22 | 2000-11-07 | Vlsi Technology, Inc. | Programmable semiconductor structures and methods for making the same |
US6492694B2 (en) | 1998-02-27 | 2002-12-10 | Micron Technology, Inc. | Highly conductive composite polysilicon gate for CMOS integrated circuits |
US6180998B1 (en) | 1998-03-30 | 2001-01-30 | Lsi Logic Corporation | DRAM with built-in noise protection |
JP2000012787A (ja) | 1998-06-10 | 2000-01-14 | Lucent Technol Inc | 集積回路デバイスおよび集積回路に用いる抵抗性素子を形成する方法 |
US6037204A (en) | 1998-08-07 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Silicon and arsenic double implanted pre-amorphization process for salicide technology |
US6602796B2 (en) | 1998-09-03 | 2003-08-05 | Micron Technology, Inc. | Chemical vapor deposition for smooth metal films |
US6603883B1 (en) | 1998-09-08 | 2003-08-05 | Canon Kabushiki Kaisha | Image processing apparatus including an image data encoder having at least two scalability modes and method therefor |
JP2000124195A (ja) | 1998-10-14 | 2000-04-28 | Tokyo Electron Ltd | 表面処理方法及びその装置 |
US7157314B2 (en) | 1998-11-16 | 2007-01-02 | Sandisk Corporation | Vertically stacked field programmable nonvolatile memory and method of fabrication |
US6181597B1 (en) | 1999-02-04 | 2001-01-30 | Tower Semiconductor Ltd. | EEPROM array using 2-bit non-volatile memory cells with serial read operations |
US6128214A (en) | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6587086B1 (en) | 1999-10-26 | 2003-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JP2001147243A (ja) | 1999-11-24 | 2001-05-29 | Mitsubishi Electric Corp | アナログ信号検出回路及び半導体電力変換装置の交流側電流検出器 |
JP2001189448A (ja) | 1999-12-28 | 2001-07-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6288435B1 (en) | 1999-12-28 | 2001-09-11 | Xerox Corporation | Continuous amorphous silicon layer sensors using doped poly-silicon back contact |
AU5204500A (en) | 2000-06-27 | 2002-01-08 | Brown And Sharpe Tesa Sa | Magnetoresistive electrode measuring device, and measuring method |
US6563156B2 (en) | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
EP2323164B1 (en) | 2000-08-14 | 2015-11-25 | SanDisk 3D LLC | Multilevel memory array and method for making same |
US6541316B2 (en) | 2000-12-22 | 2003-04-01 | The Regents Of The University Of California | Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction |
US6627530B2 (en) | 2000-12-22 | 2003-09-30 | Matrix Semiconductor, Inc. | Patterning three dimensional structures |
US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
US6436765B1 (en) | 2001-02-09 | 2002-08-20 | United Microelectronics Corp. | Method of fabricating a trenched flash memory cell |
US7102150B2 (en) | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
US6927430B2 (en) | 2001-06-28 | 2005-08-09 | Sharp Laboratories Of America, Inc. | Shared bit line cross-point memory array incorporating P/N junctions |
US6489645B1 (en) | 2001-07-03 | 2002-12-03 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device including a layered superlattice material with an interface buffer layer |
US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
US6838720B2 (en) | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
EP1434232B1 (en) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Memory cell |
US6858481B2 (en) | 2001-08-13 | 2005-02-22 | Advanced Micro Devices, Inc. | Memory device with active and passive layers |
US7109056B2 (en) | 2001-09-20 | 2006-09-19 | Micron Technology, Inc. | Electro-and electroless plating of metal in the manufacture of PCRAM devices |
US6552932B1 (en) | 2001-09-21 | 2003-04-22 | Sandisk Corporation | Segmented metal bitlines |
US6815781B2 (en) | 2001-09-25 | 2004-11-09 | Matrix Semiconductor, Inc. | Inverted staggered thin film transistor with salicided source/drain structures and method of making same |
WO2003034498A1 (en) | 2001-10-16 | 2003-04-24 | Midwest Research Institute | Stacked switchable element and diode combination |
US6686772B2 (en) | 2001-11-19 | 2004-02-03 | Broadcom Corporation | Voltage mode differential driver and method |
TWI281748B (en) * | 2001-12-18 | 2007-05-21 | Matsushita Electric Ind Co Ltd | Non-volatile memory |
US20030141565A1 (en) | 2002-01-28 | 2003-07-31 | Fumihiko Hirose | Diode |
JP3948292B2 (ja) | 2002-02-01 | 2007-07-25 | 株式会社日立製作所 | 半導体記憶装置及びその製造方法 |
US7087919B2 (en) | 2002-02-20 | 2006-08-08 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US6643213B2 (en) | 2002-03-12 | 2003-11-04 | Hewlett-Packard Development Company, L.P. | Write pulse circuit for a magnetic memory |
US7247345B2 (en) | 2002-03-25 | 2007-07-24 | Ulvac, Inc. | Optical film thickness controlling method and apparatus, dielectric multilayer film and manufacturing apparatus thereof |
US6858482B2 (en) | 2002-04-10 | 2005-02-22 | Micron Technology, Inc. | Method of manufacture of programmable switching circuits and memory cells employing a glass layer |
US20040026682A1 (en) | 2002-06-17 | 2004-02-12 | Hai Jiang | Nano-dot memory and fabricating same |
TWI233204B (en) | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
US6870755B2 (en) | 2002-08-02 | 2005-03-22 | Unity Semiconductor Corporation | Re-writable memory with non-linear memory element |
US7020006B2 (en) | 2002-08-02 | 2006-03-28 | Unity Semiconductor Corporation | Discharge of conductive array lines in fast memory |
US20050020510A1 (en) | 2002-08-29 | 2005-01-27 | Benedict Dale L. | D-mannose contraceptives |
US6867996B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology, Inc. | Single-polarity programmable resistance-variable memory element |
US6848012B2 (en) | 2002-09-27 | 2005-01-25 | Broadcom Corporation | Method and system for an adaptive multimode media queue |
US6873015B2 (en) | 2002-10-02 | 2005-03-29 | Micron Technology, Inc. | Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors |
US7023093B2 (en) | 2002-10-24 | 2006-04-04 | International Business Machines Corporation | Very low effective dielectric constant interconnect Structures and methods for fabricating the same |
US6821879B2 (en) | 2002-10-30 | 2004-11-23 | Xerox Corporation | Copper interconnect by immersion/electroless plating in dual damascene process |
JP2004193282A (ja) | 2002-12-10 | 2004-07-08 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US6795338B2 (en) * | 2002-12-13 | 2004-09-21 | Intel Corporation | Memory having access devices using phase change material such as chalcogenide |
US7589343B2 (en) | 2002-12-13 | 2009-09-15 | Intel Corporation | Memory and access device and method therefor |
US7176064B2 (en) | 2003-12-03 | 2007-02-13 | Sandisk 3D Llc | Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide |
US7800932B2 (en) | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Memory cell comprising switchable semiconductor memory element with trimmable resistance |
US7238607B2 (en) | 2002-12-19 | 2007-07-03 | Sandisk 3D Llc | Method to minimize formation of recess at surface planarized by chemical mechanical planarization |
US6946719B2 (en) | 2003-12-03 | 2005-09-20 | Matrix Semiconductor, Inc | Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide |
US8637366B2 (en) | 2002-12-19 | 2014-01-28 | Sandisk 3D Llc | Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states |
US7433253B2 (en) | 2002-12-20 | 2008-10-07 | Qimonda Ag | Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module |
US6897519B1 (en) | 2003-02-26 | 2005-05-24 | Dialog Semiconductor | Tunneling floating gate APS pixel |
US7606059B2 (en) | 2003-03-18 | 2009-10-20 | Kabushiki Kaisha Toshiba | Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array |
US7729158B2 (en) | 2003-04-03 | 2010-06-01 | Kabushiki Kaisha Toshiba | Resistance change memory device |
JP2004319587A (ja) | 2003-04-11 | 2004-11-11 | Sharp Corp | メモリセル、メモリ装置及びメモリセル製造方法 |
US6816405B1 (en) | 2003-06-02 | 2004-11-09 | International Business Machines Corporation | Segmented word line architecture for cross point magnetic random access memory |
EP1489622B1 (en) | 2003-06-16 | 2007-08-15 | STMicroelectronics S.r.l. | Writing circuit for a phase change memory device |
JP4074279B2 (ja) | 2003-09-22 | 2008-04-09 | 株式会社東芝 | 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変lsi装置、icカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置 |
JP2005109236A (ja) | 2003-09-30 | 2005-04-21 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US7136300B2 (en) | 2003-10-06 | 2006-11-14 | Hewlett-Packard Development Company, Lp. | Magnetic memory device including groups of series-connected memory elements |
JPWO2005041303A1 (ja) | 2003-10-23 | 2007-04-26 | 松下電器産業株式会社 | 抵抗変化素子、その製造方法、その素子を含むメモリ、およびそのメモリの駆動方法 |
CN101833970B (zh) | 2003-11-10 | 2012-10-03 | 松下电器产业株式会社 | 记录介质,播放装置,程序,播放方法,系统集成电路 |
US7682920B2 (en) | 2003-12-03 | 2010-03-23 | Sandisk 3D Llc | Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse |
US7474000B2 (en) | 2003-12-05 | 2009-01-06 | Sandisk 3D Llc | High density contact to relaxed geometry layers |
US6849891B1 (en) | 2003-12-08 | 2005-02-01 | Sharp Laboratories Of America, Inc. | RRAM memory cell electrodes |
KR100885365B1 (ko) | 2003-12-26 | 2009-02-26 | 파나소닉 주식회사 | 메모리회로 |
US7139198B2 (en) | 2004-01-27 | 2006-11-21 | Sandisk Corporation | Efficient verification for coarse/fine programming of non-volatile memory |
US20050175099A1 (en) | 2004-02-06 | 2005-08-11 | Nokia Corporation | Transcoder and associated system, method and computer program product for low-complexity reduced resolution transcoding |
DE102004007633B4 (de) | 2004-02-17 | 2010-10-14 | Qimonda Ag | Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle |
US7420786B2 (en) | 2004-03-03 | 2008-09-02 | Kabushiki Kaisha Toshiba | Arrangement of a magneto-resistance effect element having a surface contacting a side face of an electrode and magnetic memory using this arrangement |
US7339818B2 (en) | 2004-06-04 | 2008-03-04 | Micron Technology, Inc. | Spintronic devices with integrated transistors |
JP2008503085A (ja) * | 2004-06-16 | 2008-01-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電気デバイスおよびその製造方法 |
US7084691B2 (en) | 2004-07-21 | 2006-08-01 | Sharp Laboratories Of America, Inc. | Mono-polarity switchable PCMO resistor trimmer |
JP4830275B2 (ja) | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
US7365411B2 (en) | 2004-08-12 | 2008-04-29 | Micron Technology, Inc. | Resistance variable memory with temperature tolerant materials |
US7289353B2 (en) | 2004-08-17 | 2007-10-30 | Spansion, Llc | Systems and methods for adjusting programming thresholds of polymer memory cells |
US7122853B1 (en) | 2004-08-17 | 2006-10-17 | Fasl, Inc. | Method to improve yield and simplify operation of polymer memory cells |
DE102004041330B3 (de) | 2004-08-26 | 2006-03-16 | Infineon Technologies Ag | Speicherschaltung mit ein Widerstandsspeicherelement aufweisenden Speicherzellen |
KR100593448B1 (ko) | 2004-09-10 | 2006-06-28 | 삼성전자주식회사 | 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들 |
US7135696B2 (en) | 2004-09-24 | 2006-11-14 | Intel Corporation | Phase change memory with damascene memory element |
US7405465B2 (en) | 2004-09-29 | 2008-07-29 | Sandisk 3D Llc | Deposited semiconductor structure to minimize n-type dopant diffusion and method of making |
US7221599B1 (en) | 2004-11-01 | 2007-05-22 | Spansion, Llc | Polymer memory cell operation |
US7189626B2 (en) | 2004-11-03 | 2007-03-13 | Micron Technology, Inc. | Electroless plating of metal caps for chalcogenide-based memory devices |
JP4783002B2 (ja) | 2004-11-10 | 2011-09-28 | 株式会社東芝 | 半導体メモリ素子 |
JP4829502B2 (ja) | 2005-01-11 | 2011-12-07 | シャープ株式会社 | 半導体記憶装置の製造方法 |
US7307268B2 (en) | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
US7749805B2 (en) | 2005-03-10 | 2010-07-06 | Qimonda Ag | Method for manufacturing an integrated circuit including an electrolyte material layer |
JP2006260030A (ja) | 2005-03-16 | 2006-09-28 | Ricoh Co Ltd | 定電圧電源回路及び定電圧電源回路の検査方法 |
KR100697282B1 (ko) | 2005-03-28 | 2007-03-20 | 삼성전자주식회사 | 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 |
US7382028B2 (en) | 2005-04-15 | 2008-06-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming silicide and semiconductor device formed thereby |
US7776682B1 (en) | 2005-04-20 | 2010-08-17 | Spansion Llc | Ordered porosity to direct memory element formation |
US7323349B2 (en) | 2005-05-02 | 2008-01-29 | Sharp Laboratories Of America, Inc. | Self-aligned cross point resistor memory array |
US7835170B2 (en) | 2005-05-09 | 2010-11-16 | Nantero, Inc. | Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks |
US8102018B2 (en) | 2005-05-09 | 2012-01-24 | Nantero Inc. | Nonvolatile resistive memories having scalable two-terminal nanotube switches |
JP2006344746A (ja) | 2005-06-08 | 2006-12-21 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
US20060279979A1 (en) | 2005-06-13 | 2006-12-14 | Tyler Lowrey | Method of reading phase-change memory elements |
TWI255018B (en) | 2005-06-15 | 2006-05-11 | Winbond Electronics Corp | Method of fabricating a non-volatile memory |
US7238994B2 (en) | 2005-06-17 | 2007-07-03 | Macronix International Co., Ltd. | Thin film plate phase change ram circuit and manufacturing method |
US7345907B2 (en) | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
US7362604B2 (en) * | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
US7426128B2 (en) | 2005-07-11 | 2008-09-16 | Sandisk 3D Llc | Switchable resistive memory with opposite polarity write pulses |
US20070015348A1 (en) | 2005-07-18 | 2007-01-18 | Sharp Laboratories Of America, Inc. | Crosspoint resistor memory device with back-to-back Schottky diodes |
US7446010B2 (en) | 2005-07-18 | 2008-11-04 | Sharp Laboratories Of America, Inc. | Metal/semiconductor/metal (MSM) back-to-back Schottky diode |
US7303971B2 (en) | 2005-07-18 | 2007-12-04 | Sharp Laboratories Of America, Inc. | MSM binary switch memory device |
US7460389B2 (en) | 2005-07-29 | 2008-12-02 | International Business Machines Corporation | Write operations for phase-change-material memory |
US7521705B2 (en) | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
US7251154B2 (en) | 2005-08-15 | 2007-07-31 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
JP4891667B2 (ja) | 2005-08-22 | 2012-03-07 | 株式会社東芝 | 半導体装置の製造方法 |
JP2007058964A (ja) * | 2005-08-23 | 2007-03-08 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
KR100630437B1 (ko) | 2005-08-31 | 2006-10-02 | 삼성전자주식회사 | 비휘발성 유기물 저항 메모리 장치 및 그 제조 방법 |
KR100655443B1 (ko) | 2005-09-05 | 2006-12-08 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 동작 방법 |
US7745788B2 (en) | 2005-09-23 | 2010-06-29 | Massachusetts Institute Of Technology | Optical trapping with a semiconductor |
JP4684297B2 (ja) | 2005-10-19 | 2011-05-18 | 富士通株式会社 | 不揮発性半導体記憶装置の書き込み方法 |
US20070105390A1 (en) | 2005-11-09 | 2007-05-10 | Oh Travis B | Oxygen depleted etching process |
US7187577B1 (en) | 2005-11-23 | 2007-03-06 | Grandis, Inc. | Method and system for providing current balanced writing for memory cells and magnetic devices |
US8243542B2 (en) | 2005-11-30 | 2012-08-14 | Samsung Electronics Co., Ltd. | Resistance variable memory devices and read methods thereof |
US7209384B1 (en) | 2005-12-08 | 2007-04-24 | Juhan Kim | Planar capacitor memory cell and its applications |
US7324363B2 (en) | 2005-12-12 | 2008-01-29 | Synopsys, Inc. | SPICE optimized for arrays |
US7599209B2 (en) | 2005-12-23 | 2009-10-06 | Infineon Technologies Ag | Memory circuit including a resistive memory element and method for operating such a memory circuit |
JP5067650B2 (ja) | 2006-01-06 | 2012-11-07 | 日本電気株式会社 | 半導体記憶装置 |
KR100684908B1 (ko) | 2006-01-09 | 2007-02-22 | 삼성전자주식회사 | 다수 저항 상태를 갖는 저항 메모리 요소, 저항 메모리 셀및 그 동작 방법 그리고 상기 저항 메모리 요소를 적용한데이터 처리 시스템 |
US8222746B2 (en) | 2006-03-03 | 2012-07-17 | Intel Corporation | Noble metal barrier layers |
US7875871B2 (en) | 2006-03-31 | 2011-01-25 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US7829875B2 (en) | 2006-03-31 | 2010-11-09 | Sandisk 3D Llc | Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
JP2007281208A (ja) | 2006-04-07 | 2007-10-25 | Matsushita Electric Ind Co Ltd | 多層抵抗変化素子アレイ、抵抗変化装置、多層不揮発性記憶素子アレイ、及び不揮発性記憶装置 |
KR101239962B1 (ko) | 2006-05-04 | 2013-03-06 | 삼성전자주식회사 | 하부 전극 상에 형성된 버퍼층을 포함하는 가변 저항메모리 소자 |
US7824943B2 (en) | 2006-06-04 | 2010-11-02 | Akustica, Inc. | Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same |
JP4297136B2 (ja) | 2006-06-07 | 2009-07-15 | ソニー株式会社 | 記憶装置 |
US7626518B2 (en) | 2006-06-08 | 2009-12-01 | Via Technologies, Inc. | Decoding systems and methods in computational core of programmable graphics processing unit |
KR101159075B1 (ko) | 2006-06-27 | 2012-06-25 | 삼성전자주식회사 | n+ 계면층을 구비한 가변 저항 랜덤 액세스 메모리 소자 |
US7719001B2 (en) | 2006-06-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with metal oxides and an organic compound |
KR100738116B1 (ko) | 2006-07-06 | 2007-07-12 | 삼성전자주식회사 | 가변 저항 물질을 포함하는 비휘발성 메모리 소자 |
JP2008021750A (ja) | 2006-07-11 | 2008-01-31 | Matsushita Electric Ind Co Ltd | 抵抗変化素子およびその製造方法、ならびにそれを用いた抵抗変化型メモリ |
US7932548B2 (en) | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US7428163B2 (en) | 2006-07-21 | 2008-09-23 | Infineon Technologies Ag | Method and memory circuit for operating a resistive memory cell |
US7499355B2 (en) | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | High bandwidth one time field-programmable memory |
US7515454B2 (en) | 2006-08-02 | 2009-04-07 | Infineon Technologies Ag | CBRAM cell and CBRAM array, and method of operating thereof |
US7869253B2 (en) | 2006-08-21 | 2011-01-11 | Qimonda Ag | Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell |
WO2008026081A2 (en) | 2006-08-31 | 2008-03-06 | Interuniversitair Microelektronica Centrum (Imec) | Method for manufacturing a resistive switching device and devices obtained thereof |
US7772581B2 (en) | 2006-09-11 | 2010-08-10 | Macronix International Co., Ltd. | Memory device having wide area phase change element and small electrode contact area |
US8009476B2 (en) | 2006-09-19 | 2011-08-30 | Samsung Electronics Co., Ltd. | Semiconductor memory device using variable resistor |
JP4869006B2 (ja) | 2006-09-27 | 2012-02-01 | 株式会社東芝 | 半導体記憶装置の制御方法 |
KR101043980B1 (ko) | 2006-09-29 | 2011-06-24 | 후지쯔 세미컨덕터 가부시키가이샤 | 불휘발성 반도체 기억 장치 및 그 판독 방법, 기입 방법 및소거 방법 |
JP4560025B2 (ja) | 2006-09-29 | 2010-10-13 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその製造方法 |
US8766224B2 (en) | 2006-10-03 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Electrically actuated switch |
US7778061B2 (en) | 2006-10-16 | 2010-08-17 | Hewlett-Packard Development Company, L.P. | Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems |
US10134985B2 (en) | 2006-10-20 | 2018-11-20 | The Regents Of The University Of Michigan | Non-volatile solid state resistive switching devices |
US7915603B2 (en) | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
US7872900B2 (en) | 2006-11-08 | 2011-01-18 | Symetrix Corporation | Correlated electron memory |
US7778063B2 (en) | 2006-11-08 | 2010-08-17 | Symetrix Corporation | Non-volatile resistance switching memories and methods of making same |
US7830585B2 (en) | 2006-11-09 | 2010-11-09 | Sage Electrochromics, Inc. | Method of making an ion-switching device without a separate lithiation step |
KR100782496B1 (ko) | 2006-11-09 | 2007-12-05 | 삼성전자주식회사 | 자기 정렬된 셀 다이오드를 갖는 반도체 소자의 제조방법및 이를 이용하는 상변화 기억소자의 제조방법 |
US7728318B2 (en) | 2006-11-16 | 2010-06-01 | Sandisk Corporation | Nonvolatile phase change memory cell having a reduced contact area |
KR101002612B1 (ko) | 2006-11-30 | 2010-12-20 | 후지쯔 가부시끼가이샤 | 불휘발성 반도체 기억 장치 및 그 기입 방법, 판독 방법 및 소거 방법 |
JP4088323B1 (ja) * | 2006-12-06 | 2008-05-21 | シャープ株式会社 | 不揮発性半導体記憶装置 |
JP4334589B2 (ja) | 2006-12-06 | 2009-09-30 | 株式会社東芝 | 半導体装置、およびその製造方法 |
JP4088324B1 (ja) | 2006-12-08 | 2008-05-21 | シャープ株式会社 | 不揮発性半導体記憶装置 |
EP1933563A1 (en) | 2006-12-14 | 2008-06-18 | Thomson Licensing | Method and apparatus for encoding and/or decoding bit depth scalable video data using adaptive enhancement layer residual prediction |
JP2008160031A (ja) | 2006-12-26 | 2008-07-10 | Sony Corp | 記憶素子及びメモリ |
JP4202411B2 (ja) | 2006-12-28 | 2008-12-24 | パナソニック株式会社 | 抵抗変化型素子および抵抗変化型記憶装置 |
US7433226B2 (en) | 2007-01-09 | 2008-10-07 | Macronix International Co., Ltd. | Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell |
US7972897B2 (en) | 2007-02-05 | 2011-07-05 | Intermolecular, Inc. | Methods for forming resistive switching memory elements |
JP5159116B2 (ja) | 2007-02-07 | 2013-03-06 | 株式会社東芝 | 半導体記憶装置 |
US8265136B2 (en) | 2007-02-20 | 2012-09-11 | Vixs Systems, Inc. | Motion refinement engine for use in video encoding in accordance with a plurality of sub-pixel resolutions and methods for use therewith |
US7382647B1 (en) | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
JP2008217844A (ja) | 2007-02-28 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
US20080205179A1 (en) | 2007-02-28 | 2008-08-28 | Qimonda Ag | Integrated circuit having a memory array |
WO2008107941A1 (ja) | 2007-03-01 | 2008-09-12 | Fujitsu Limited | 半導体装置及びその製造方法 |
US7629198B2 (en) | 2007-03-05 | 2009-12-08 | Intermolecular, Inc. | Methods for forming nonvolatile memory elements with resistive-switching metal oxides |
CN101636792B (zh) | 2007-03-13 | 2013-03-13 | 松下电器产业株式会社 | 电阻变化型存储器件 |
US7984776B2 (en) | 2007-03-30 | 2011-07-26 | The Regents Of The University Of Michigan | Energy storage and control system for a vehicle electrified drivetrain |
EP2132806A4 (en) | 2007-03-30 | 2012-12-19 | Univ Michigan | MICROARCHITECTURATED BATTERY |
US7704788B2 (en) * | 2007-04-06 | 2010-04-27 | Samsung Electronics Co., Ltd. | Methods of fabricating multi-bit phase-change memory devices and devices formed thereby |
JP5422552B2 (ja) | 2007-05-09 | 2014-02-19 | インターモレキュラー, インコーポレイテッド | 抵抗性スイッチング不揮発性メモリ要素 |
US20080278988A1 (en) | 2007-05-09 | 2008-11-13 | Klaus Ufert | Resistive switching element |
JP4967176B2 (ja) | 2007-05-10 | 2012-07-04 | シャープ株式会社 | 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置 |
JP4410272B2 (ja) * | 2007-05-11 | 2010-02-03 | 株式会社東芝 | 不揮発性メモリ装置及びそのデータ書き込み方法 |
US20080301497A1 (en) | 2007-06-04 | 2008-12-04 | Silicon Motion, Inc. | Testing Apparatus, System, and Method for Testing at Least One Device with a Connection Interface |
US7800094B2 (en) | 2007-06-11 | 2010-09-21 | Macronix International Co., Ltd. | Resistance memory with tungsten compound and manufacturing |
US7855119B2 (en) | 2007-06-15 | 2010-12-21 | Sandisk 3D Llc | Method for forming polycrystalline thin film bipolar transistors |
JP5396011B2 (ja) | 2007-06-19 | 2014-01-22 | ピーエスフォー ルクスコ エスエイアールエル | 相変化メモリ装置 |
US7920408B2 (en) * | 2007-06-22 | 2011-04-05 | Panasonic Corporation | Resistance change nonvolatile memory device |
US8422803B2 (en) | 2007-06-28 | 2013-04-16 | Mitsubishi Electric Corporation | Image encoding device, image decoding device, image encoding method and image decoding method |
US8233308B2 (en) | 2007-06-29 | 2012-07-31 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
US7846785B2 (en) | 2007-06-29 | 2010-12-07 | Sandisk 3D Llc | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
CN101720508B (zh) | 2007-06-29 | 2012-05-23 | 桑迪士克3D公司 | 利用选择性生长的可逆电阻切换元件的存储器单元以及形成该存储器单元的方法 |
US7824956B2 (en) | 2007-06-29 | 2010-11-02 | Sandisk 3D Llc | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same |
US7566643B2 (en) | 2007-07-23 | 2009-07-28 | Ovonyx, Inc. | Liquid phase deposition of contacts in programmable resistance and switching devices |
US7764536B2 (en) | 2007-08-07 | 2010-07-27 | Grandis, Inc. | Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory |
JP2009043873A (ja) | 2007-08-08 | 2009-02-26 | Sony Corp | 記憶素子および記憶装置 |
KR101326077B1 (ko) | 2007-08-24 | 2013-11-07 | 삼성전자주식회사 | 저항성 메모리 소자 |
KR101380187B1 (ko) | 2007-10-08 | 2014-04-03 | 삼성전자주식회사 | 저전력, 낮은 독출 디스터번스를 갖는 비휘발성 메모리 장치 및 그것의 프리챠지 방법 및 독출 방법 |
US9000408B2 (en) | 2007-10-12 | 2015-04-07 | Ovonyx, Inc. | Memory device with low reset current |
JP4545823B2 (ja) * | 2007-10-15 | 2010-09-15 | パナソニック株式会社 | 不揮発性記憶素子、並びにその不揮発性記憶素子を用いた不揮発性半導体装置 |
JP2009099206A (ja) | 2007-10-17 | 2009-05-07 | Toshiba Corp | 抵抗変化メモリ装置 |
KR101237005B1 (ko) | 2007-11-09 | 2013-02-26 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템, 및 이의 구동 방법 |
US7786464B2 (en) | 2007-11-20 | 2010-08-31 | Infineon Technologies Ag | Integrated circuit having dielectric layer including nanocrystals |
JP5175526B2 (ja) | 2007-11-22 | 2013-04-03 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US7718990B2 (en) | 2007-12-04 | 2010-05-18 | Ovonyx, Inc. | Active material devices with containment layer |
JP5178743B2 (ja) * | 2007-12-26 | 2013-04-10 | パナソニック株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
US7706169B2 (en) | 2007-12-27 | 2010-04-27 | Sandisk 3D Llc | Large capacity one-time programmable memory cell using metal oxides |
US7768812B2 (en) * | 2008-01-15 | 2010-08-03 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US7897953B2 (en) | 2008-01-16 | 2011-03-01 | Micron Technology, Inc. | Multi-level programmable PCRAM memory |
KR20090081153A (ko) | 2008-01-23 | 2009-07-28 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조방법 |
US7955958B2 (en) | 2008-02-07 | 2011-06-07 | International Business Machines Corporation | Method for fabrication of polycrystalline diodes for resistive memories |
US8035099B2 (en) | 2008-02-27 | 2011-10-11 | Spansion Llc | Diode and resistive memory device structures |
US7746696B1 (en) | 2008-03-04 | 2010-06-29 | Xilinx, Inc. | CMOS twin cell non-volatile random access memory |
US8183553B2 (en) | 2009-04-10 | 2012-05-22 | Intermolecular, Inc. | Resistive switching memory element including doped silicon electrode |
US8143092B2 (en) | 2008-03-10 | 2012-03-27 | Pragati Kumar | Methods for forming resistive switching memory elements by heating deposited layers |
US7960216B2 (en) | 2008-05-10 | 2011-06-14 | Intermolecular, Inc. | Confinement techniques for non-volatile resistive-switching memories |
US7961507B2 (en) * | 2008-03-11 | 2011-06-14 | Micron Technology, Inc. | Non-volatile memory with resistive access component |
EP2107571B1 (en) | 2008-04-03 | 2012-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
JP2009253033A (ja) | 2008-04-07 | 2009-10-29 | Panasonic Corp | 半導体記憶装置及びその製造方法 |
US8304284B2 (en) | 2008-04-11 | 2012-11-06 | Sandisk 3D Llc | Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same |
US7812335B2 (en) * | 2008-04-11 | 2010-10-12 | Sandisk 3D Llc | Sidewall structured switchable resistor cell |
US7692959B2 (en) | 2008-04-22 | 2010-04-06 | International Business Machines Corporation | Multilayer storage class memory using externally heated phase change material |
JP2009267219A (ja) | 2008-04-28 | 2009-11-12 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
US20090268513A1 (en) | 2008-04-29 | 2009-10-29 | Luca De Ambroggi | Memory device with different types of phase change memory |
US8551809B2 (en) | 2008-05-01 | 2013-10-08 | Intermolecular, Inc. | Reduction of forming voltage in semiconductor devices |
US8305793B2 (en) | 2008-05-16 | 2012-11-06 | Qimonda Ag | Integrated circuit with an array of resistance changing memory cells |
JP5244454B2 (ja) | 2008-05-19 | 2013-07-24 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
US8592922B2 (en) | 2008-06-09 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor device and a method of manufacturing the same |
US8624214B2 (en) | 2008-06-10 | 2014-01-07 | Panasonic Corporation | Semiconductor device having a resistance variable element and a manufacturing method thereof |
WO2009155359A1 (en) | 2008-06-20 | 2009-12-23 | Nantero, Inc. | Nram arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same |
US8742387B2 (en) | 2008-06-25 | 2014-06-03 | Qimonda Ag | Resistive memory devices with improved resistive changing elements |
US7732235B2 (en) | 2008-06-30 | 2010-06-08 | Sandisk 3D Llc | Method for fabricating high density pillar structures by double patterning using positive photoresist |
US7781269B2 (en) | 2008-06-30 | 2010-08-24 | Sandisk 3D Llc | Triangle two dimensional complementary patterning of pillars |
WO2010009364A1 (en) | 2008-07-18 | 2010-01-21 | Sandisk 3D, Llc | Carbon-based resistivity-switching materials and methods of forming the same |
US7932506B2 (en) | 2008-07-22 | 2011-04-26 | Macronix International Co., Ltd. | Fully self-aligned pore-type memory cell having diode access device |
JP5430890B2 (ja) | 2008-07-25 | 2014-03-05 | 株式会社東芝 | 半導体記憶装置 |
TWI622175B (zh) | 2008-07-31 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP5342189B2 (ja) | 2008-08-06 | 2013-11-13 | 株式会社日立製作所 | 不揮発性記憶装置及びその製造方法 |
US8557685B2 (en) | 2008-08-07 | 2013-10-15 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8362454B2 (en) | 2008-08-12 | 2013-01-29 | Industrial Technology Research Institute | Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same |
US8295082B2 (en) | 2008-08-15 | 2012-10-23 | Qualcomm Incorporated | Gate level reconfigurable magnetic logic |
TW201009954A (en) | 2008-08-19 | 2010-03-01 | Chunghwa Picture Tubes Ltd | Thin film transistor, pixel structure and fabrication methods thereof |
WO2010026654A1 (ja) | 2008-09-05 | 2010-03-11 | 株式会社 東芝 | 記憶装置 |
US7755923B2 (en) | 2008-09-18 | 2010-07-13 | Seagate Technology Llc | Memory array with read reference voltage cells |
US7615439B1 (en) | 2008-09-29 | 2009-11-10 | Sandisk Corporation | Damascene process for carbon memory element with MIIM diode |
US8344348B2 (en) | 2008-10-02 | 2013-01-01 | Ovonyx, Inc. | Memory device |
US8027209B2 (en) | 2008-10-06 | 2011-09-27 | Sandisk 3D, Llc | Continuous programming of non-volatile memory |
US8687402B2 (en) | 2008-10-08 | 2014-04-01 | The Regents Of The University Of Michigan | Silicon-based nanoscale resistive device with adjustable resistance |
US8071972B2 (en) | 2008-10-20 | 2011-12-06 | The Regents Of The University Of Michigan | Silicon based nanoscale crossbar memory |
ITTO20080784A1 (it) | 2008-10-24 | 2010-04-25 | Terra Srl Ricerca & Sviluppo | Procedimento per la produzione di un agente per il trattamento di terreni agricoli |
US8097874B2 (en) | 2008-10-30 | 2012-01-17 | Seagate Technology Llc | Programmable resistive memory cell with sacrificial metal |
US7858468B2 (en) | 2008-10-30 | 2010-12-28 | Micron Technology, Inc. | Memory devices and formation methods |
US7791925B2 (en) | 2008-10-31 | 2010-09-07 | Seagate Technology, Llc | Structures for resistive random access memory cells |
US7898838B2 (en) | 2008-10-31 | 2011-03-01 | Seagate Technology Llc | Resistive sense memory calibration for self-reference read method |
US7855923B2 (en) | 2008-10-31 | 2010-12-21 | Seagate Technology Llc | Write current compensation using word line boosting circuitry |
US7830700B2 (en) | 2008-11-12 | 2010-11-09 | Seagate Technology Llc | Resistive sense memory array with partial block update capability |
JP2010140919A (ja) | 2008-12-09 | 2010-06-24 | Hitachi Ltd | 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板 |
US8067815B2 (en) | 2008-12-11 | 2011-11-29 | Macronix International Co., Lt.d. | Aluminum copper oxide based memory devices and methods for manufacture |
US7978496B2 (en) | 2008-12-18 | 2011-07-12 | Sandisk 3D Llc | Method of programming a nonvolatile memory device containing a carbon storage material |
US8027215B2 (en) | 2008-12-19 | 2011-09-27 | Unity Semiconductor Corporation | Array operation using a schottky diode as a non-ohmic isolation device |
JP2010146665A (ja) | 2008-12-19 | 2010-07-01 | Toshiba Corp | 抵抗変化型不揮発性半導体メモリ |
US8164937B2 (en) | 2008-12-22 | 2012-04-24 | Unity Semiconductor Corporation | Digital potentiometer using third dimensional memory |
TW201025588A (en) | 2008-12-30 | 2010-07-01 | Ind Tech Res Inst | Phase-change memory devices and methods for fabricating the same |
WO2010076837A1 (en) | 2008-12-31 | 2010-07-08 | Michele Magistretti | Avoiding degradation of chalcogenide material during definition of multilayer stack structure |
US8089137B2 (en) | 2009-01-07 | 2012-01-03 | Macronix International Co., Ltd. | Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method |
JP2010165803A (ja) | 2009-01-14 | 2010-07-29 | Toshiba Corp | 半導体記憶装置の製造方法及び半導体記憶装置 |
US8143164B2 (en) | 2009-02-09 | 2012-03-27 | Intermolecular, Inc. | Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing |
US8021897B2 (en) | 2009-02-19 | 2011-09-20 | Micron Technology, Inc. | Methods of fabricating a cross point memory array |
JP5560261B2 (ja) | 2009-02-23 | 2014-07-23 | パナソニック株式会社 | 情報記録媒体 |
JP5044586B2 (ja) | 2009-02-24 | 2012-10-10 | 株式会社東芝 | 半導体記憶装置 |
JP4846816B2 (ja) * | 2009-03-19 | 2011-12-28 | 株式会社東芝 | 抵抗変化型メモリ |
US7940554B2 (en) | 2009-04-24 | 2011-05-10 | Sandisk 3D Llc | Reduced complexity array line drivers for 3D matrix arrays |
EP2437499A4 (en) | 2009-05-29 | 2013-01-23 | Mitsubishi Electric Corp | ENCODER AND VIDEO DECODER, VIDEO ENCODING AND DECODING METHOD |
CN102077296B (zh) | 2009-06-08 | 2014-04-02 | 松下电器产业株式会社 | 电阻变化型非易失性存储元件的成形方法及电阻变化型非易失性存储装置 |
JP2011003241A (ja) | 2009-06-18 | 2011-01-06 | Toshiba Corp | 半導体記憶装置 |
US8154904B2 (en) | 2009-06-19 | 2012-04-10 | Sandisk 3D Llc | Programming reversible resistance switching elements |
US8710483B2 (en) * | 2009-07-10 | 2014-04-29 | Hewlett-Packard Development Company, L.P. | Memristive junction with intrinsic rectifier |
US8227783B2 (en) | 2009-07-13 | 2012-07-24 | Seagate Technology Llc | Non-volatile resistive sense memory with praseodymium calcium manganese oxide |
JP2011023645A (ja) * | 2009-07-17 | 2011-02-03 | Sharp Corp | 不揮発性可変抵抗素子を用いた半導体記憶装置 |
CN103367452B (zh) | 2009-09-11 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 绿色晶体管、电阻随机存储器及其驱动方法 |
US8207064B2 (en) | 2009-09-17 | 2012-06-26 | Sandisk 3D Llc | 3D polysilicon diode with low contact resistance and method for forming same |
JP5337121B2 (ja) | 2009-09-17 | 2013-11-06 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4922375B2 (ja) | 2009-09-18 | 2012-04-25 | 株式会社東芝 | 抵抗変化型メモリ |
JP4945619B2 (ja) | 2009-09-24 | 2012-06-06 | 株式会社東芝 | 半導体記憶装置 |
US8274130B2 (en) * | 2009-10-20 | 2012-09-25 | Sandisk 3D Llc | Punch-through diode steering element |
US8072795B1 (en) | 2009-10-28 | 2011-12-06 | Intermolecular, Inc. | Biploar resistive-switching memory with a single diode per memory cell |
WO2011064801A1 (en) | 2009-11-30 | 2011-06-03 | Andrea Redaelli | Memory including a low thermal budget selector switch on a variable resistance memory cell |
US8298887B2 (en) | 2009-12-03 | 2012-10-30 | Applied Materials, Inc. | High mobility monolithic p-i-n diodes |
JP5439147B2 (ja) | 2009-12-04 | 2014-03-12 | 株式会社東芝 | 抵抗変化メモリ |
US8385100B2 (en) | 2009-12-08 | 2013-02-26 | Intel Corporation | Energy-efficient set write of phase change memory with switch |
US8045364B2 (en) | 2009-12-18 | 2011-10-25 | Unity Semiconductor Corporation | Non-volatile memory device ion barrier |
TWI416661B (zh) | 2009-12-29 | 2013-11-21 | Ind Tech Res Inst | 空隙製造方法、電阻式記憶元件及其製造方法 |
US8314005B2 (en) | 2010-01-27 | 2012-11-20 | International Business Machines Corporation | Homogeneous porous low dielectric constant materials |
KR101699769B1 (ko) | 2010-02-08 | 2017-01-25 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성방법 |
JP5732827B2 (ja) | 2010-02-09 | 2015-06-10 | ソニー株式会社 | 記憶素子および記憶装置、並びに記憶装置の動作方法 |
US8848430B2 (en) | 2010-02-23 | 2014-09-30 | Sandisk 3D Llc | Step soft program for reversible resistivity-switching elements |
JP5032611B2 (ja) | 2010-02-19 | 2012-09-26 | 株式会社東芝 | 半導体集積回路 |
US8237146B2 (en) | 2010-02-24 | 2012-08-07 | Sandisk 3D Llc | Memory cell with silicon-containing carbon switching layer and methods for forming the same |
DE102010002454A1 (de) | 2010-02-26 | 2011-09-01 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Metallisierungssystem eines Halbleiterbauelements mit verrundeten Verbindungen, die durch Hartmaskenverrundung hergestellt sind |
WO2011115926A1 (en) | 2010-03-16 | 2011-09-22 | Sandisk 3D, Llc | Bottom electrodes for use with metal oxide resistivity switching layers |
CN102918638A (zh) | 2010-04-19 | 2013-02-06 | 惠普发展公司,有限责任合伙企业 | 具有部分氧化电极的纳米级开关器件 |
WO2011145634A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8564070B2 (en) | 2010-05-24 | 2013-10-22 | Chengdu Haicun Ip Technology Llc | Large bit-per-cell three-dimensional mask-programmable read-only memory |
EP2576105A4 (en) | 2010-05-27 | 2014-01-15 | Applied Thin Films Inc | PROTECTIVE COATINGS FOR SUBSTRATES WITH AN ACTIVE SURFACE |
CN102270654B (zh) | 2010-06-03 | 2013-10-16 | 北京大学 | 阻变随机访问存储器件及其制造和操作方法 |
US9012307B2 (en) | 2010-07-13 | 2015-04-21 | Crossbar, Inc. | Two terminal resistive switching device structure and method of fabricating |
US8441835B2 (en) | 2010-06-11 | 2013-05-14 | Crossbar, Inc. | Interface control for improved switching in RRAM |
US8198144B2 (en) | 2010-06-11 | 2012-06-12 | Crossbar, Inc. | Pillar structure for memory device and method |
US8274812B2 (en) | 2010-06-14 | 2012-09-25 | Crossbar, Inc. | Write and erase scheme for resistive memory device |
US8520425B2 (en) | 2010-06-18 | 2013-08-27 | Sandisk 3D Llc | Resistive random access memory with low current operation |
US8395926B2 (en) * | 2010-06-18 | 2013-03-12 | Sandisk 3D Llc | Memory cell with resistance-switching layers and lateral arrangement |
US8351241B2 (en) * | 2010-06-24 | 2013-01-08 | The Regents Of The University Of Michigan | Rectification element and method for resistive switching for non volatile memory device |
US9508425B2 (en) | 2010-06-24 | 2016-11-29 | The Regents Of The University Of Michigan | Nanoscale metal oxide resistive switching element |
CN102473707A (zh) | 2010-07-01 | 2012-05-23 | 松下电器产业株式会社 | 非易失性存储单元、非易失性存储单元阵列、以及其制造方法 |
US8374018B2 (en) | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
US20120007035A1 (en) | 2010-07-12 | 2012-01-12 | Crossbar, Inc. | Intrinsic Programming Current Control for a RRAM |
US8467227B1 (en) | 2010-11-04 | 2013-06-18 | Crossbar, Inc. | Hetero resistive switching material layer in RRAM device and method |
US8947908B2 (en) | 2010-11-04 | 2015-02-03 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8168506B2 (en) | 2010-07-13 | 2012-05-01 | Crossbar, Inc. | On/off ratio for non-volatile memory device and method |
US20120033479A1 (en) | 2010-08-06 | 2012-02-09 | Lsi Corporation | Modification of logic by morphological manipulation of a semiconductor resistive element |
US8546254B2 (en) | 2010-08-19 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
US8404553B2 (en) | 2010-08-23 | 2013-03-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device and method |
US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
JP5092001B2 (ja) | 2010-09-29 | 2012-12-05 | 株式会社東芝 | 半導体集積回路 |
US8558212B2 (en) | 2010-09-29 | 2013-10-15 | Crossbar, Inc. | Conductive path in switching material in a resistive random access memory device and control |
US8723154B2 (en) | 2010-09-29 | 2014-05-13 | Crossbar, Inc. | Integration of an amorphous silicon resistive switching device |
US8315079B2 (en) | 2010-10-07 | 2012-11-20 | Crossbar, Inc. | Circuit for concurrent read operation and method therefor |
US8389971B2 (en) | 2010-10-14 | 2013-03-05 | Sandisk 3D Llc | Memory cells having storage elements that share material layers with steering elements and methods of forming the same |
JP2012089567A (ja) | 2010-10-15 | 2012-05-10 | Toshiba Corp | 不揮発性抵抗変化素子 |
WO2012052968A1 (en) | 2010-10-20 | 2012-04-26 | Nokia Corporation | Method and device for video coding and decoding |
US8187945B2 (en) | 2010-10-27 | 2012-05-29 | Crossbar, Inc. | Method for obtaining smooth, continuous silver film |
US8502185B2 (en) * | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
US8258020B2 (en) | 2010-11-04 | 2012-09-04 | Crossbar Inc. | Interconnects for stacked non-volatile memory device and method |
US8767441B2 (en) | 2010-11-04 | 2014-07-01 | Crossbar, Inc. | Switching device having a non-linear element |
US8088688B1 (en) | 2010-11-05 | 2012-01-03 | Crossbar, Inc. | p+ polysilicon material on aluminum for non-volatile memory device and method |
CN102064739B (zh) | 2010-11-28 | 2013-10-30 | 吴世永 | 用于太阳能供电装置夜间铺设发光板的驱动机构 |
CN102479925A (zh) | 2010-11-30 | 2012-05-30 | 中国科学院微电子研究所 | 具有高变比能力的电阻转变存储器结构及其制备方法 |
CA2722993A1 (fr) | 2010-12-01 | 2012-06-01 | Ecole De Technologie Superieure | Systeme d'ecodage video parallele multitrames et multitranches avec encodage simultane de trames predites |
US8557654B2 (en) | 2010-12-13 | 2013-10-15 | Sandisk 3D Llc | Punch-through diode |
JP2012133836A (ja) | 2010-12-20 | 2012-07-12 | Toshiba Corp | 抵抗変化型メモリ |
US8467226B2 (en) | 2011-01-14 | 2013-06-18 | Micron Technology, Inc. | Programming an array of resistance random access memory cells using unipolar pulses |
CN102623045B (zh) | 2011-01-27 | 2014-10-29 | 中国科学院微电子研究所 | 阻变型随机存储单元及存储器 |
US8357599B2 (en) | 2011-02-10 | 2013-01-22 | Applied Materials, Inc. | Seed layer passivation |
KR101157105B1 (ko) | 2011-02-14 | 2012-06-22 | 동국대학교 산학협력단 | 그라핀 옥사이드의 저항 스위칭 특성을 이용한 비휘발성 메모리 소자 및 이의 제조 방법 |
US8482955B2 (en) | 2011-02-25 | 2013-07-09 | Micron Technology, Inc. | Resistive memory sensing methods and devices |
US8699259B2 (en) | 2011-03-02 | 2014-04-15 | Sandisk 3D Llc | Non-volatile storage system using opposite polarity programming signals for MIM memory cell |
US8320160B2 (en) * | 2011-03-18 | 2012-11-27 | Crossbar, Inc. | NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor |
JP2012199336A (ja) | 2011-03-18 | 2012-10-18 | Sony Corp | 記憶素子および記憶装置 |
US20120241710A1 (en) | 2011-03-21 | 2012-09-27 | Nanyang Technological University | Fabrication of RRAM Cell Using CMOS Compatible Processes |
JP5439420B2 (ja) | 2011-03-22 | 2014-03-12 | 株式会社東芝 | 記憶装置 |
JP5812330B2 (ja) | 2011-03-31 | 2015-11-11 | 日本電産株式会社 | モータおよびディスク駆動装置 |
US8394670B2 (en) | 2011-05-31 | 2013-03-12 | Crossbar, Inc. | Vertical diodes for non-volatile memory device |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US8525290B2 (en) | 2011-06-24 | 2013-09-03 | Macronix International Co., Ltd. | Method of forming memory cell access device |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9209396B2 (en) | 2013-05-08 | 2015-12-08 | Crossbar, Inc. | Regulating interface layer growth with N2O for two-terminal memory |
US8693241B2 (en) | 2011-07-13 | 2014-04-08 | SK Hynix Inc. | Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same |
CN103828047A (zh) | 2011-07-22 | 2014-05-28 | 科洛斯巴股份有限公司 | 用于非易失性存储器装置的p+硅锗材料的种子层及方法 |
US8466005B2 (en) | 2011-07-22 | 2013-06-18 | Intermolecular, Inc. | Method for forming metal oxides and silicides in a memory device |
US20130075685A1 (en) | 2011-09-22 | 2013-03-28 | Yubao Li | Methods and apparatus for including an air gap in carbon-based memory devices |
CN103022347B (zh) | 2011-09-27 | 2016-03-09 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
KR101942272B1 (ko) | 2011-12-27 | 2019-01-28 | 삼성전자주식회사 | 비휘발성 메모리의 제어방법, 이를 구현한 비휘발성 메모리 컨트롤러 및 이를 포함하는 메모리 시스템 |
US8569104B2 (en) | 2012-02-07 | 2013-10-29 | Intermolecular, Inc. | Transition metal oxide bilayers |
US8779407B2 (en) | 2012-02-07 | 2014-07-15 | Intermolecular, Inc. | Multifunctional electrode |
US8658997B2 (en) | 2012-02-14 | 2014-02-25 | Intermolecular, Inc. | Bipolar multistate nonvolatile memory |
US8941089B2 (en) | 2012-02-22 | 2015-01-27 | Adesto Technologies Corporation | Resistive switching devices and methods of formation thereof |
KR101948153B1 (ko) | 2012-03-12 | 2019-02-14 | 삼성전자주식회사 | 저항성 메모리 장치 및 그것의 데이터 쓰기 방법 |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8946667B1 (en) | 2012-04-13 | 2015-02-03 | Crossbar, Inc. | Barrier structure for a silver based RRAM and method |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
KR101974198B1 (ko) | 2012-07-12 | 2019-04-30 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
US9082972B2 (en) | 2012-07-24 | 2015-07-14 | Hewlett-Packard Development Company, L.P. | Bipolar resistive switch heat mitigation |
US8946673B1 (en) | 2012-08-24 | 2015-02-03 | Crossbar, Inc. | Resistive switching device structure with improved data retention for non-volatile memory device and method |
US9472756B2 (en) | 2012-09-07 | 2016-10-18 | Kabushiki Kaisha Toshiba | Nonvolatile memory device |
US9431604B2 (en) | 2012-12-14 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive random access memory (RRAM) and method of making |
US20140175360A1 (en) | 2012-12-20 | 2014-06-26 | Intermolecular Inc. | Bilayered Oxide Structures for ReRAM Cells |
US8995166B2 (en) | 2012-12-20 | 2015-03-31 | Intermolecular, Inc. | Multi-level memory array having resistive elements for multi-bit data storage |
US9035272B2 (en) | 2013-01-16 | 2015-05-19 | Hewlett-Packard Development Company, L.P. | Nanoparticle-based memristor structure |
US9343668B2 (en) | 2013-03-14 | 2016-05-17 | Crossbar, Inc. | Low temperature in-situ doped silicon-based conductor material for memory cell |
US9196831B2 (en) | 2013-03-14 | 2015-11-24 | Crossbar, Inc. | Two-terminal memory with intrinsic rectifying characteristic |
US9118007B2 (en) | 2013-03-14 | 2015-08-25 | Crossbar, Inc. | RRAM with dual mode operation |
US9093635B2 (en) | 2013-03-14 | 2015-07-28 | Crossbar, Inc. | Controlling on-state current for two-terminal memory |
US9627057B2 (en) | 2013-03-15 | 2017-04-18 | Crossbar, Inc. | Programming two-terminal memory cells with reduced program current |
TWI560918B (en) | 2014-10-15 | 2016-12-01 | Univ Nat Sun Yat Sen | Resistance random access memory |
-
2011
- 2011-05-31 US US13/149,757 patent/US8502185B2/en active Active
-
2012
- 2012-05-31 CN CN201280027066.9A patent/CN103582947A/zh active Pending
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- 2012-05-31 KR KR1020137035133A patent/KR101934015B1/ko active IP Right Grant
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- 2013-08-06 US US13/960,735 patent/US8952349B2/en active Active
-
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- 2014-12-17 US US14/573,770 patent/US9543359B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101501850A (zh) * | 2006-10-16 | 2009-08-05 | 松下电器产业株式会社 | 非易失性存储元件及其制造方法 |
US7830698B2 (en) * | 2008-04-11 | 2010-11-09 | Sandisk 3D Llc | Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same |
US20100243983A1 (en) * | 2009-03-31 | 2010-09-30 | Tony Chiang | Controlled localized defect paths for resistive memories |
WO2011008654A1 (en) * | 2009-07-13 | 2011-01-20 | Seagate Technology Llc | Non-volatile memory cell with non-ohmic selection layer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465989A (zh) * | 2014-12-26 | 2015-03-25 | 中国科学院微电子研究所 | 三端原子开关器件及其制备方法 |
CN104465989B (zh) * | 2014-12-26 | 2017-02-22 | 中国科学院微电子研究所 | 三端原子开关器件及其制备方法 |
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