TW550997B - Module with built-in components and the manufacturing method thereof - Google Patents

Module with built-in components and the manufacturing method thereof Download PDF

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Publication number
TW550997B
TW550997B TW091123553A TW91123553A TW550997B TW 550997 B TW550997 B TW 550997B TW 091123553 A TW091123553 A TW 091123553A TW 91123553 A TW91123553 A TW 91123553A TW 550997 B TW550997 B TW 550997B
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Taiwan
Prior art keywords
component
electrical insulation
insulation layer
aforementioned
patent application
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Application number
TW091123553A
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English (en)
Inventor
Toshiyuki Asahi
Yasuhiro Sugaya
Shingo Komatsu
Yoshiyuki Yamamoto
Seiichi Nakatani
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Matsushita Electric Ind Co Ltd
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Publication of TW550997B publication Critical patent/TW550997B/zh

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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
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Description

550997 A7 r--"- 五、發明說明（I ) 〔技術領域〕 本發明係關於電路元件配置於電氣絕緣層的內部之電 路元件內藏模組及其製造方法。 〔習知技術〕 於近年來之電子機器的高性能化、小型化的潮流之中 ’更加要求著電路元件的高密度、高機能化。於搭載電路 元件之模組中，須要求能因應高密度、高機能化之需求。 作爲電路元件之高密度地構裝的方法，目前，配線基板有 朝向多層化之傾向。於習知的玻璃布-環氧樹脂含浸基板中 ，係使用藉由鑽頭之貫穿的穿孔構造而達成多層化，可靠 性雖高，但並不適於高密度構裝。因此之故，作爲最能夠 謀求電路元件的高密度化之方法，藉由內導通孔連接之多 層配線基板亦被採用著。藉由內導通孔連接，可使LSI間 或元件間的配線圖案以最短距離連接，可只對必要的各層 作連接，於電路元件的構裝性方面亦優異。又，在配線圖 案的微細化與高密度構裝上所不可或缺的技術之線寬線距 (line and space)年年益趨減小。而且，在基板內形成被動 元件之3維構裝也正在開發中。 然而，爲了在基板內部形成被動元件，於材料開發、 形成精度、設備投資等方面有待克服的課題甚多，致開發 速度緩慢。 又，本案申請人亦曾提案在基板內部內藏被動元件者( 特開平1 1(1999)_220262號公報、美國專利第6,038，133號 公報）。然而，依據此提案之實施例，由於係於將元件埋設 —____4______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----訂---------線 »· 550997 A7 B7—_____ 五、發明說明（2/ ) 至基板內部之後再形成配線’故於內藏前’無法進行對半 導體等之元件之構裝檢查或特性檢查’是其問題。又，由 於並非將配線基板一體化再行埋設，故強度並不高，亦爲 問題。 〔發明之槪要〕 本發明爲解決前述習知的問題’其目的係提供於內藏 前可進行半導體等的元件之構裝檢查或特性檢查、可提高 良率、提高強度、生產性高、可尚密度構裝的元件內藏模 組。 爲達成上述之目的，本發明之元件內藏模組，係含有 .:電氣絕緣層、在前述電氣絕緣層的兩表面上一體化形成 之配線、及用以連接前述配線間之導通孔，於前述電氣絕 緣層的內部，埋設有選自電子元件及半導體之至少一種元 件所成者，其特徵在於：前述配線之至少一方，係形成於 配線基板的表面之配線；埋設於前述電氣絕緣層的內部之 元件，係於埋設之前搭載於前述配線基板上且構成一體化 〇 又，本發明之元件內藏模組之製造方法，該元件內藏 模組係含有：電氣絕緣層、在前述電氣絕緣層的兩表面上 一體化形成之配線、及用以連接前述配線間之導通孔，於 前述電氣絕緣層的內部，埋設有選自電子元件及半導體之 至少一種元件所成者，其特徵在於包含··前述配線之至少 一方’係形成於配線基板的表面之配線；在前述配線基板 上構裝選自電子元件及半導體之至少一種元件；沿著由半 _______5___ 私紙張尺度剌中關家標準（CNS)A4規格（21Q χ 297公爱）' ""^ {請先閱讀背面之注意事項再填寫本頁) 裝 訂！ 線· 550997 A7 -------2Z------— 五、發明說明（h ) 硬化狀態的熱硬化性樹脂所構成之電氣絕緣層的厚度方向 形成導通孔；以前述配線基板在外側的方式/將前述元件埋 設至前述電氣絕緣層；使前述電氣絕緣層硬化。 〔圖式之簡單說明〕 圖1爲本發明之實施形態1之元件內藏模組的截面圖 0 圖2A〜E爲本發明之實施形態2之元件內藏模組的製 程的截面圖。 圖3爲本發明之實施形態3之元件內藏模組的截面圖 〇 圖4爲本發明之實施形態4之元件內藏模組的截面圖 〇 圖5爲本發明之實施形態5之元件內藏模組的截面圖 〇 圖6爲本發明之實施形態6之元件內藏模組之製程的 截面圖。 圖7A〜C爲本發明之實施形態7之元件內藏模組的截 面圖。 圖8爲本發明之實施形態8之元件內藏模組的截面圖 〇 圖9爲本發明之實施形態9之元件內藏模組的截面圖 〇 圖10爲本發明之實施形態10之元件內藏模組的截面 圖。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐1 -------------裝—— (請先閱讀背面之注意事項再填寫本頁) ^-r«»J. 線 _6_______ 550997 A7 ____B7____________ 五、發明說明（W ) 圖11爲本發明之實施形態11之元件內藏模組之製程 的截面圖。 圖12爲本發明之實施形態12之元件內藏模組之製程 的截面圖。 〔發明之詳細說明〕 本發明，爲一種元件內藏模組，其係含有··電氣絕緣 層、在前述電氣絕緣層的兩表面上一體化形成之配線、及 用以連接前述配線間之導通孔，於前述電氣絕緣層的內部 ，埋設有選自電子元件及半導體之至少一種元件所成者。 前述配線之至少一方，係配線基板；埋設於前述電氣絕緣 層的內部之元件，係於埋設之前搭載於前述配線基板上且 構成一體化。藉此，於內藏前可對半導體等之元件作構裝 檢查或特性檢查。其結果，可提高良率。又，由於係使配 線基板一體化後埋設，故強度可提高。且可提供生產性高 、並可高密度構裝的元件內藏模組。於前述中所謂之埋設 ，係謂完全埋設到前述電氣絕緣層的內部。 本發明之前述配線基板以兩面基板或多層配線基板爲 佳。藉此，可容易地形成複雜的配線。 又，於本發明中，以將前述電氣絕緣層內部的電子元 件及/或半導體(以下，總稱爲「元件」）構裝到前述電氣絕 緣層的兩主平面的配線圖案及/或配線基板爲佳。藉由將元 件構裝到兩主平面上，且內藏於電氣絕緣層，可提供元件 內藏層爲更高密度的模組。 又，於本發明中，以使前述元件對於前述電氣絕緣層 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁} I · I I I---—訂·--------線· 550997 A7 -------B7___ 五、發明說明（5 ) 的主平面之法線方向爲錯開而配置爲佳。藉此，可較構裝 機的元件構裝間隔，更高密度地配置元件。且可減低電氣 絕緣層的厚度，而有益於高密度化。 又’以在配置於前述電氣絕緣層內部、構裝於前述電 氣絕緣層的兩主平面之配線圖案及/或配線基板的元件間插 入遮蔽層爲佳。藉此，可使內藏之元件間的干涉、來自外 部對內藏元件的干涉、自內藏元件往外部的放射之任一者 或全部減低，可提升模組的特性。 又’前述遮蔽層，以金屬箔配線圖案或電磁遮蔽材爲 佳。於使用金屬箔配線圖案的場合，可用與形成配線圖案 的相同製程來形成遮蔽層，容易進行生產。於使用電磁遮 蔽材的場合’只要變更電氣絕緣層的材質即可作成，製程 不須改變而可使干涉減低。 又，以在與前述配線圖案及/或配線基板的前述電氣絕 緣層的相反側之主平面構裝元件爲佳。藉此，不僅在電氣 絕緣層，在相反側的主平面亦可構裝元件，可謀求高密度 化。 又，前述電子元件以分立(discrete)元件爲佳。藉此， 內藏之元件不須新開發，可提高模組本身的開發速度。且 可利用現有的分立元件的可靠性與精度’而提升模組的特 性。前述所謂之分立元件，係例如電感器、電容器、電阻 等之泛用晶片元件。於後文中，將電感器、電容器及電阻 統稱爲「LCR」。 又，前述半導體以半導體裸晶片爲佳。藉此’與半導 _ _ 8__—________ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I------------ (請先閱讀背面之注意事項再填寫本頁) 訂_ -線· 550997 A7 _____Β7______ 五、發明說明（b ) 體封裝體比較，可用更低面積作成模組，而可提供高密度 的模組。 又，前述半導體裸晶片，以藉由倒裝片接合方式連接 至前述配線圖案及/或配線基板爲佳。藉此，可謀求短配線 化與高密度構裝化。 又，前述半導體裸晶片，以經硏削或硏磨加工爲佳。 藉此，可減低半導體的厚度，具有降低模組高度的效果。 前述製造方法中，於使前述電氣絕緣層硬化之製程後 ，以含有將元件構裝到配線圖案及/或配線基板之製程爲佳 。藉此，可有效率地製造本發明之元件內藏模組。 又，於構裝前述半導體之前，以將半導體晶圓施以硏 削及/或硏磨爲佳。藉此，可使半導體的薄型化於晶圓狀態 一倂進行，而可提高生產性。 又，於構裝前述半導體後，以將配線板固定及輸送來 進行硏削及/或硏磨爲佳。藉此，不須處理薄型化之半導體 即可製造本發明之元件內藏模組。 又，將前述元件埋設到電氣絕緣層之製程，與使前述 電氣絕緣層硬化之製程以同時進行爲佳。藉此，可減少製 程數而製造本發明之元件內藏模組。 又，前述遮蔽層之形成製程，以藉由形成銅箔配線圖 案來進行爲佳。藉此，可有效率地製造本發明之元件內藏 模組。 又，前述遮蔽層之形成製程，以藉由進行電磁遮蔽層 之積層來進行爲佳。藉此，可有效率地製造本發明之元件 9 中國國家標準（CNS)A4規格（210 X 297公ϋ ' — (請先閱讀背面之注意事項再填寫本頁) 訂· --線· 550997 A7 ___B7___ 五、發明說明（Ί) 內藏模組。 --------------裝--- <請先閱讀背面之注意事項再填寫本頁) 又，於本發明中，使元件於前述電氣絕緣層內部呈對 向配置亦可。尤其是’在高度高的元件與低的元件混合存 在之場合，若使高度低的元件呈對向配置，則可高密度地 塡充。 又，前述電氣絕緣層的厚度方向之熱膨脹係數設爲導 通孔的熱膨脹係數的1〇倍以下亦可。這樣做，則於元件內 藏模組的外側進一步搭載元件之場合，例如，即使經過熔 焊製程，電氣絕緣層的厚度方向的膨脹率也不致於變成太 大，故不會破壞到導通孔的導通。 (實施形態1) 以下’就本發明之實施形態參照圖式加以說明。圖i 爲本發明之實施形態1之元件內藏模組的截面圖。於圖1 中’兀件內藏模組，具有：電氣絕緣層1〇1、配線圖案1〇2 、導通孔103、元件1〇4、與焊料1()5，並進一步包含兩面 基板109，具有配線圖案106、1〇8、與內導通孔1〇7。 電氣絕緣層101，可用例如，絕緣性樹脂、及塡料與 絕緣性樹脂的混合物等。電氣絕緣層，含有樹脂與塡料， 塡料含有量以50質量％〜95質量％爲佳。又，若有玻璃布 等之補強材料亦可。作爲絕緣性樹脂，可用熱硬化性樹脂 丄熱=性樹脂、光硬化性樹脂等，藉由使用耐熱性高的環 氧樹脂或酿酸樹脂、異氰酸酯樹脂，可提高電氣絕緣層 101的耐熱性。χ，藉由使用含有低介電觀因數的氟樹 脂例如聚四氟乙烯(pTFE樹脂）、PP〇(PGlyphenylene oxide 度適用中國- 550997 A7 五、發明說明（，？） •聚本酸)樹脂(亦稱爲PPE(Polyphenylene ether)樹脂）、液 晶聚合物，或將此等樹脂改質之樹脂，可提升電氣絕緣層 的局頻特性。作爲電氣絕緣層101，於使用塡料與絕緣性 樹脂的混合物之場合，藉由選擇塡料及絕緣性樹脂，可容 易地控制電氣絕緣層101的線膨脹係數、熱傳導度、介電 率等。例如，可使用氧化鋁、氧化鎂、氮化硼、氮化鋁、 氮化矽、聚四氟乙烯、及二氧化矽等作爲塡料。藉由使用 氧化鋁、氮化氟、氮化鋁，可製作成較習知的玻璃_環氧基 板熱傳導度爲高的基板，可使內藏之元件104的發熱有效 地進行放熱。又，氧化鋁具有成本低的優點。於使用二氧 化砍的场合’可製得介電率低的電氣絕緣層1 〇 1，由於比 重亦輕，以用作爲行動電話等之高頻用途爲佳。使用氮化 矽或聚四氟乙烯(例如，鐵氟龍(杜邦公司註冊商標))亦可形 成介電常數低的電氣絕緣層。又，藉由使用氮化硼，可減 低線膨脹係數。亦可更進一步含有分散劑、著色劑、耦合 劑或離型劑。藉由分散劑，可使絕緣性樹脂中的塡料均一 性良好地分散。藉由著色劑，由於可對電氣絕緣層著色， 可使自動辨識裝置的使用變得容易。藉由耦合劑，由於可 使絕緣性樹脂與塡料的接合強度提高，而可提高電氣絕緣 層101的絕緣性。藉由離型劑，由於可提高模具與混合物 的離型性，故可提高生產性。 配線圖案102，係由具有電傳導性之物質所構成，可 使用例如金屬箔或導電性樹脂組成物、以金屬板加工而成 之導線架。藉由使用金屬箔或導線架，可藉由蝕刻而容易 __ 11 _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ---1---!11! ^^ · I I (請先閲讀背面之注意事項再填寫本頁) · •線 550997 A7 ___B7____ 五、發明說明（1 ) (請先閱讀背面之注意事項再填寫本頁) 地作成微細的配線圖案。又，於金屬箔中，亦可藉由用離 型膜之轉印等來形成配線圖案。尤其以銅箔的成本低且電 傳導性高，爲較佳者。又，藉由在離型膜上形成配線圖案 ，使得配線圖案易於處理。又，藉由使用導電性樹脂組成 物，藉由網版印刷等之配線圖案的製作亦成爲可能。藉由 使用導線架，而可使用電阻低、有厚度之金屬。又，可使 用藉由蝕刻之微細圖案化或衝孔加工等之簡易的製造法。 又，藉由在此等配線圖案102的表面進行電鍍處理，可使 耐蝕性與電傳導性提高。又，藉由對配線圖案102與電氣 絕緣層101的接觸面之粗化，可提高與電氣絕緣層101的 接合性。又，亦可用配線圖案來形成耦合器或濾波器。配 線圖案102，亦可在表層側構裝半導體及/或電子元件。 -線_ 導通孔103具有連接配線圖案102之間的機能，係由 例如熱硬化性的導電性物質構成。作爲熱硬化性的導電性 物質，可使用例如，將金屬粒子與熱硬化性樹脂混合所成 之導電性樹脂組成物。作爲金屬粒子，可使用金、銀、銅 或鎳。金、銀、銅或鎳由於導電性高故爲較佳，尤以銅， 其導電性高且移動(migration)少，故特佳。即使使用銅以 銀被覆之金屬粒子，移動少且導電性高兩者的特性都可滿 足。作爲熱硬化性樹脂，可使用例如，環氧樹脂、酚醛樹 脂或異氰酸酯樹脂。環氧樹脂，因耐熱性高，尤其較佳。 又，導通孔103，可藉由於導通孔形成後進行電鍍來形成 。又，亦可藉由金屬與焊料的組合等來形成。 電子元件104，可使用例如，電容器、電感器、電阻 一 __12_______ 木紙張尺度適用中國國家標準（CNS)A4規袼（210 X 297公釐） 550997 A7 __ B7 __ 五、發明說明（ιϋ) (LCR)等之晶片兀件，或二極體、熱敏電阻、開_等。因 係將分立元件內藏，不須新開發內藏元件。又，按照精度 及溫度特性等用途，元件可使用現有的元件’有益於可靠 性的提高。又，亦可形成印刷電阻或薄膜電容器·電感器 等。 焊料105，係用以將電子元件104構裝到配線圖案102 上。於使用高溫焊料之場合，可防止將模組藉由瑢焊進行 構裝之際之焊料的再熔融。又，由於使用無鉛焊料，環境 的負荷可得以減輕。於本實施形態中係使用焊料，惟，亦 可使用導電性黏著劑等。 作爲兩面基板109，可由：使玻璃織物含浸環氧樹脂 而成之基板(玻璃_環氧樹脂基板）、使芳族聚醯胺纖維不織 布含浸環氧樹脂而成之基板(芳族聚醯胺-環氧樹脂基板）、 使紙含浸酚醛樹脂而成之基板（紙酚醛基板）、陶瓷基板等 之任意的基板，依目的而選擇使用。 例如將使用玻璃-環氧樹脂基板之兩面基板上搭載元件 ，進行檢查，然後，埋設電氣絕緣層所成之元件內藏模組( 實施形態1)，和不使用基板而將元件以單體埋設電氣絕緣 層，然後，在表面形成配線圖案所成之模組，作兩者的強 度之比較，其結果雖因基板的種類、複合成分之陶瓷的種 類、量、厚度等而異，平均而言，實施形態1方面的彎曲 強度約高達1.3倍。 (實施形態2) 於此實施形態2,係就圖1所示之元件內藏模組的製 (請先閱讀背面之注意事項再填寫本頁) 訂： -·線· _13__ 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) 550997 A7 __B7______ 五、發明說明（·Λ ) (請先閱讀背面之注意事項再填寫本頁} 造方法之一實施形態加以說明。於實施形態2中所用的材 料，係於實施形態1中所說明者。圖2A〜圖2D爲顯示元 件內藏模組的製程的一實施形態之截面圖。如圖2A所示 般，在未硬化的電氣絕緣層201上形成貫通孔207。作爲 電氣絕緣層201，可使用絕緣性樹脂、或絕緣性樹脂與塡 料的混合物。首先，將塡料與絕緣性樹脂混合，藉由攪拌 ’來製作糊狀的絕緣性樹脂混合物。亦可對絕緣性樹脂混 合物添加用以調整黏度之溶劑。藉由將此絕緣性樹脂混合 物成形爲片材形狀，可形成電氣絕緣層201。作爲成形爲 片材形狀的方法，可藉由刮刀（doctor blade)法等，在薄膜 上作成。電氣絕緣層201，藉由在硬化溫度以下使其乾燥 ’可降低黏著性。藉由此熱處理，板狀的電氣絕緣層的黏 著性會喪失，故可容易地與薄膜剝離。藉由作成爲半硬化 狀態(B階），操作會變得容易。貫通孔207的形成，可藉 由例如’雷射加工或鑽孔加工、衝孔加工來製作。雷射加 工’可形成微細間距的導通孔，且不會產生切削屑，故爲 較佳。於雷射加工的場合，可使用二氧化碳雷射、YAG雷 射或準分子雷射等。又，於鑽孔加工、衝孔加工的場合， 可使用泛用性的現有設備容易地形成貫通孔。由於係使用 未硬化狀態的電氣絕緣層201，加工變得容易。 另外’備妥於載體206上形成有配線圖案202者。配 線圖案202 ’可使用蝕刻、印刷之類的方法來形成。尤其 Μ用纟虫刻法時’可利用微影工法等微細的配線圖案之形成 法。作爲載體，可用ΡΕΤ(聚對苯二甲酸乙二醇酯)或PPS( _______14_
幸、紙張尺度適用中國國家標準（CNS)A4規格（ 公H 550997 A7 _ B7 ___ _------------ 五、發明說明（\>) 聚苯硫)之類的樹脂薄膜，及其他之銅泊、錯泊之類的金屬 箔。藉由使用載體206，配線圖案202的利用會變得容易 。又，在配線圖案202與載體206之間亦可設有用以使配 線圖案202容易剝離之剝離層。 在兩面配線基板211(具有連接配線圖案208、210及 其間之內導通孔209)上之配線圖案208，將兀件204藉由 焊料205構裝於其上，然後，完成選自構裝檢查及特性檢 查之至少一種的檢查。於配線圖案21 〇的下側預先以保護 膜被覆212亦可。 其次，對圖2A中所作成的貫通孔207充塡導電性導 通孔糊料。導電性導通孔糊料爲導電性粉末與樹脂的混合 物，可用金、銀、銅、鎳等之金屬粉’或碳粉與熱硬化性 樹脂或光硬化性樹脂的混合物。於使用銅之場合’導電性 高，且移動性小，故較佳。又，亦可使用將粉末以銅被覆 所成之導電性粉末。作爲樹脂，可使用熱硬化性樹脂，例 如，環氧樹脂、酚醛樹脂、異氰酸酯樹脂、聚苯醚等。尤 以環氧樹脂因耐熱性高爲特佳。又，亦可使用光硬化性樹 脂。導通孔糊料的塡充，可用藉由印刷或注入的方法。尤 其是於印刷的場合，亦可進行配線圖案的形成。由於形成 導通孔203，配線圖案202與208間可得以連接。又，亦 可預先形成用以在電氣絕緣層201內藏電子元件204的空 間。藉由空間之形成，可抑制導通孔203之變形。 作爲將元件204構裝到兩面配線基板211(具有連接配 線圖案208、210及其間之內導通孔209)上之配線圖案208 _______ 15 木紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公釐） ----I------------ (請先閱讀背面之注意事項再填寫本頁) •irOJ· 線· 550997 A7 __ ___B7 _____ 五、發明說明（A ) 的方法，除了使用焊料205之焊料構裝(膏狀焊料之印刷或 焊球)之外，亦可使用導電性黏著劑，例如，將金、銀、銅 、銀-鈀合金等以熱硬化性樹脂混練而成者。又，於所構裝 之電子元件204與兩面配線基板211之間，亦可注入密封 劑。藉由密封劑之注入，在後續製程中將電子元件204埋 設到電氣絕緣層201之時，可防止間隙之產生。密封樹脂 ，可用通常於倒裝片接合中所使用之底塡(under fill)樹脂 。構裝後，藉由檢查構裝狀態，可進行修復或不良原因的 解析。 將具有塡充有導電性導通孔糊料的導通孔203之電氣 絕緣層201配置於中央，於上側配置形成於載體206上之 配線圖案202，於下側配置構裝有電子元件204的兩面基 板211，將此等以圖2B所示般對位進行積層。 於圖2B的積層後，如圖2C所示般，可藉由加壓，將 電子元件204埋設到電氣絕緣層201中。於絕緣性樹脂使 用熱硬化性樹脂之場合，於加壓後，藉由加熱，可使電氣 絕緣層201中的熱硬化性樹脂硬化，可形成埋設有電子元 件204之板狀的電氣絕緣層201。加熱，可於熱硬化性樹 脂之硬化溫度以上的溫度進行。藉由此製程，電氣絕緣層 2〇1與元件204會機械性地強固地接合。又，於藉由加熱 使熱硬化性樹脂硬化之際，藉由一邊加熱一邊施加 l〇〇g/mm2〜2kg/mm2的壓力，可提高半導體裝置的機械強度 。又，亦可不使用片材形狀的電氣絕緣層，而於加工成粉 末或粒狀之後，使其熔融流入模具中。又，亦可於粉末的 16___— 一 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂： 線· 550997 A7 ____B7 __ 五、發明說明（K ) 狀態流入之後，進行熔融成形。作爲絕緣性樹脂層之注入 方法，可使用傳遞模塑(transfer mold)或射出成形。 於電氣絕緣層201硬化後，將載體206剝離，成爲內 藏有電子元件204之電氣絕緣層201，可形成如於實施形 態1中所說明般之由兩面基板211 —體化所成之半導體裝 置。 (實施形態3) 於實施形態3,就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖3加以說明。有 關本實施形態之元件內藏模組，除了半導體306、突塊307 、3層配線基板308諸部分以外，係與上述之實施形態1 相同。因而，實施形態3中所使用之材料，只要是未另加 說明係與實施形態1、2相同。於圖3中，元件內藏模組， 具有電氣絕緣層301、配線圖案302、導通孔303、電子元 件304、導電性黏著劑305、半導體306、突塊307及3層 配線基板308。 半導體306係與電子元件304同樣地構裝於配線基板 308上。藉由將半導體306內藏於電氣絕緣層301中，可 謀求模組之高機能化。半導體306，可用例如，電晶體、 1C、LSI等之半導體元件。半導體306，可爲封裝體，亦可 爲半導體裸晶片。又，半導體306，亦可使用密封樹脂， 將半導體306，或半導體306與突塊307、配線基板308的 連接部之至少一部份密封。藉由密封樹脂的注入，可於將 半導體306埋設於電氣絕緣層301時，防止半導體306與 ____17_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----I--I--I------ (請先閱讀背面之注意事項再填寫本頁) · ;線· 550997 A7 ______B7__ 五、發明說明（A ) (請先閱讀背面之注意事項再填寫本頁) 配線基板308之間產生間隙。密封樹脂，可使用通常使用 於倒裝片接合時所使用之底塡樹脂。配線基板308與半導 體306的連接，作爲倒裝片接合用者，可用導電性黏著劑 、異向性導電膜(ACF)、非導電性膜(NCF)與突塊。又，由 於係使用晶片尺寸封裝體(CSP)，故構裝變得容易。 突塊307係連接半導體306與配線基板308。可使用 例如，金或銅、焊料等之金屬。突塊307，可藉由引線接 合、電鍍、印刷等來形成。 -·線- 配線基板308，係一般的配線基板之玻璃環氧樹脂基 板或陶瓷基板所構成之兩面基板、合成基板或以內導通孔 連接的多層板等，爲由電氣絕緣層與配線圖案及導通孔所 構成。電氣絕緣層’爲絕緣性樹脂、或塡料與絕緣性樹脂 的混合物、陶瓷，此外，亦可加入玻璃布等之補強劑。又 ，實施形態1、2爲相同材料亦可。有關配線圖案及導通孔 亦同。由於係使用與電氣絕緣層301相同的材料，熱膨脹 係數爲相同數値’故可提高可靠性。又，於埋設電氣絕緣 層之前，須先對配線基板308與半導體306及電子元件 304的構裝狀態加以檢查。藉此，製品的良率可提高，且 可進行修復或不良的原因解析。於將電子元件304與半導 體306雙方構裝後，進行檢查之場合，可確認半導體306 的動作，是有效的方法。藉由配線基板308，對於複雜的 電路的適應’或半導體裝置的再配線變得容易，可作成爲 適合於複雜的機能之模組的構造。 又，於本實施形態中，配線基板的配線圖案雖係作成 ___ _____18 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐）_ ' 一 "~ 550997 A7 ___ B7__ 五、發明說明（丄） 爲3層，惟，並非用以限定層數，而可使用任意的層數。 (請先閱讀背面之注意事項再填寫本頁) 例如，於用玻璃-環氧樹脂基板之3層基板上搭載元件 ’進行檢查，然後，對埋設於電氣絕緣層的元件內藏模組( 實施形態3)，與未使用基板而將元件單體埋設到電氣絕緣 層，然後，再於表面形成配線圖案之模組，作兩者的強度 之比較，其結果雖因基板的種類、複合成分之陶瓷的種類 、量、厚度等而異，平均而言，實施形態3方面的彎曲強 度約高達1.3倍。 (實施形態4) 於實施形態4,係就元件內藏模組的一實施形態加以 說明。以下，就本發明之實施形態，參照圖4加以說明。 有關本實施形態之元件內藏模組，除了兩面係使用3層配 線基板408，電子元件304與半導體306係作成爲呈對向 配置之外，係與上述實施形態1〜3相同。因而，於本實施 形態中，有關未特別加以說明者，係與實施形態1〜3爲相 同，有關同樣名稱的構成零件及製造法，只要未特別加以 說明者，係具有同樣的機能。 配線基板408，與實施形態3相異之處在於作成上下 兩方配置，使其對於複雜的配線的適應及半導體的再配線 等變得容易，可作成爲適合於複雜的機能之模組的構造。 又，只要在通常的模組作成之將半導體及電子元件構裝到 配線基板上的製程後，附加以將半導體及電子元件內藏之 製程，即可形成高密度的元件內藏模組。 (實施形態5) _____19 __ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 550997 A7 __B7____ 五、發明說明（1) 於實施形態5，就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖5加以說明。有 關本實施形態之元件內藏模組，除了構裝於表層之電子元 件510、半導體506、與元件內藏層有關諸部分以外，係與 上述實施形態1〜4相同。因而，於本實施形態中，有關未 特別加以說明者，係與實施形態1〜4爲相同，有關同樣名 稱的構成零件及製造法，只要未特別加以說明者，係具有 同樣的機能。 電氣絕緣層501內之電子元件504，與實施形態4同 樣地係於通常的模組作成之構裝製程中構裝，用以構裝電 子元件504之安裝性能上，無論如何，須於電子元件與電 子元件之間設置間隔。於本實施形態中，考量到相對向之 配線基板508上之元件的構裝間隔，而將電子元件504的 位置錯開配置。藉此，在同一面積可構裝的元件數可增大 ，同時可將內藏層的厚度方向作薄，可作成適合於更高密 度構裝之構造。509爲非導電性膜(NCF)。 構裝於表層之電子元件510、半導體506，可在與通常 之模組作成之相同製程構裝，由於構裝面之增加，可更高 密度地構裝，作成適合於多機能的模組之構造。 (實施形態6) 於實施形態6,就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖6加以說明。有 關本實施形態之元件內藏模組，除了構裝於表層之電子元 件610、612、半導體611、613、與元件內藏層有關諸部分 ___20_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝--------訂---------線 _· 550997 A7 _____B7 ____ 五、發明說明（（g ) 以外，係與上述實施形態1〜5相同。因而，於本實施形態 中，有關未特別加以說明者，係與實施形態1〜5爲相同’ 有關同樣名稱的構成零件及製造法，只要未特別加以說明 者，係具有同樣的機能。 電氣絕緣層601內之電子元件604、半導體606 ’與實 施形態4、5同樣地係於通常的模組作成之構裝製程中構裝 ，惟，於對半導體606進行倒裝片構裝之際，必須要有用 以進行再配線之空間，無論如何，是不易接近地配置電子 元件。於本實施形態中，由於係將電子元件604構裝到呈 對向配置之配線基板608，故半導體606之接近地配置成 爲可能。藉此，在同一面積可構裝的元件數可增加，可作 成適合於更高密度構裝之構造。609係密封樹脂。 構裝於表層之電子元件610、半導體606，可於與通常 的模組作成之構裝製程之相同製程中構裝。由於係構裝於 兩表層面，可更高密度地構裝，作成適合於多機能的模組 之構造。 (實施形態7) 於實施形態7,就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖7A〜C加以說明 。實施形態7中所用之材料，有關未特別加以說明者，係 與上述之實施形態相同，有關同樣名稱的構件及製法，只 要未特別加以說明者’係具有同樣的機能。 圖7A〜圖7C爲表示元件內藏模組之製造製程的一實 施形態之截面圖。如圖7A般’將構裝有半導體706、電子 21 度適用中國國家標準（CNS)A4規格（21Gx 297公釐) " " ---------I----· I I (請先閱讀背面之注意事項再填寫本頁) 一5J» . •線· 550997 A7 ----B7_____ 五、發明說明（J ) 元件704之配線基板708，與形成有導通孔703、空隙710 之電氣絕緣層701對位且進行積層。配線基板708，於構 裝後，作構裝檢查，亦可進行修復。藉由使形成於電氣絕 緣層701上之空隙710作成爲與內藏之半導體706、電子 元件704的體積相同或以下，可防止內藏時產生間隙。 其次，如圖7B所示般，於積層後，藉由加壓，可將 半導體706、電子元件704埋設於電氣絕緣層701。埋設後 ，進行加熱，使電氣絕緣層701硬化。且，使配線圖案 702間以導通孔703連接。 於使電氣絕緣層701硬化後，如圖7C所示般，藉由 將半導體711 ' 713及電子元件714、712構裝到表層，可 提供元件內藏模組。 (實施形態8) 於實施形態8,就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖8加以說明。有 關本實施形態之元件內藏模組，除了關於元件內藏之部分 以外，係與上述實施形態1〜7相同。因而，於本實施形態 中，有關未特別加以說明者，係與實施形態1〜7爲相同， 有關同樣名稱的構成零件及製造法，只要未特別加以說明 者，係具有同樣的機能。 電氣絕緣層801內之電子元件804與半導體806，係 於通常的模組作成之構裝製程中構裝，惟，藉由構裝於配 線基板808的兩面，可容易地增加元件內藏層。亦即，於 3層配線基板808的上側，透過配線圖案802連接電子元 _22_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ----訂---------線 550997 A7 ___B7____ 五、發明說明（/ ) 件810、半導體811，於3層配線基板808的下側亦連接埋 設有電子元件之電氣絕緣層’再將電子元件812連接到其 表面。 藉此，可增加在同一面積之可構裝的元件數，可作成 適合於更高密度構裝之構造。 (實施形態9) 於實施形態9,就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖9加以說明。有 關本實施形態之元件內藏模組，除了關於半導體之薄型化 之部分以外，係與上述實施形態1〜8相同。因而’於本實 施形態中，有關未特別加以說明者，係與實施形態1〜8爲 相同，有關同樣名稱的構成零件及製造法，只要未特別加 以說明者，係具有同樣的機能。 藉由將半導體906薄型化，可減低元件內藏模組的厚 度。薄型化，可使用在半導體晶圓施以硏磨後進行構裝的 方法，或於將半導體構裝於配線基板908後之硏削/硏磨方 法來達成。於前者之場合，由於可將半導體906以晶圓單 位進行加工，故於生產性方面有利。於後者之場合，由於 不須處理經薄型化之半導體906，故作業性可提高。又， 半導體906不只是構裝於表層，構裝於內部亦可。 (實施形態10) 於此實施形態10，就元件內藏模組的一實施形態加以 說明。以下，就本發明之實施形態，參照圖10加以說明。 有關本實施形態之元件內藏模組，除了形成遮蔽電極之部 ^氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------------- (請先閱讀背面之注意事項再填寫本頁) · 550997 A7 _B7______ 五、發明說明（Μ) 分以外，係與上述實施形態1〜9相同。因而，於本實施形 態中，有關未特別加以說明者，係與實施形態1〜9爲相同 ，有關同樣名稱的構成零件及製造法’只要未特別加以說 明者，係具有同樣的機能。1〇〇9爲異向性導電膜(ACF)。 遮蔽電極1010，可藉由與配線圖案1002之同樣的材 料、製程來形成。藉由形成遮蔽電極1010 ’可減低內藏之 半導體1006及電子元件1004間的電磁波的干涉。藉由將 遮蔽電極1010作成爲接地電位，可謀求模組的安定化。又 ，遮蔽電極並非限定於1層。 (實施形態11) 於實施形態11，就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖11加以說明。有 關本實施形態之元件內藏模組，除了形成電磁遮蔽層1110 之部分以外，係與上述實施形態1〜1〇相同。因而’於本實 施形態中，有關未特別加以說明者，係與實施形態1〜10爲 相同，有關同樣名稱的構成零件及製造法’只要未特別加 以說明者，係具有同樣的機能。 電磁遮蔽層1110,僅藉由變更電氣絕緣層1101的塡 料，即可減低內藏之半導體1106及電子元件1104間的電 磁波的干涉。作爲塡料，可使用導磁率的複數成分高、且 可吸收電波（轉換成熱）之材料。例如，可用鐵氧體的粉末 等。於與電氣絕緣層1101之相同的製程中，可追加賦予遮 蔽機能。又，電磁遮蔽層並非限定爲1層。 (實施形態12) _____24___ 衣紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----I--— — — — — — — I I (請先閱讀背面之注意事項再填寫本頁) · ;線· 550997 A7 __________B7 _____ 五、發明說明（yv) 於實施形態12，就元件內藏模組的一實施形態加以說 明。以下，就本發明之實施形態，參照圖12加以說明。有 關本實施形態之元件內藏模組，除了關於電氣絕緣層1201 內的電子元件1204a、1204b之部分以外，係與上述實施形 態1〜11相同。因而，於本實施形態中，有關未特別加以說 明者’係與實施形態1〜1相同，有關同樣名稱的構件及製 法’只要未特別加以說明者，係具有同樣的機能。 電氣絕緣層1201內之電子元件1204a、1204b，與實 施形態4同樣地，係於通常的模組作成之構裝製程中構裝 ，惟’由於例如電容器等之容量，電子元件的尺寸非爲均 一的情形甚多。於本實施形態中，有效地利用電子元件 1204a、1204b的高度之差異，可提高構裝密度。如圖12 般’將高度低的電子元件1204a的元件相對向構裝，可有 效地利用通常會被浪費掉的電子元件1204a的上部空間， 可作成適合於更高密度構裝的構造。構裝於表層之電子元 件1204、半導體1206，可藉由與通常之模組作成之相同的 製程來構裝，由於構裝面之增加，可更高密度地構裝，作 成適合於多機能的模組之構造。 如上述說明般，依據本發明，可提供一種元件內藏模 組’其係含有：電氣絕緣層、在前述電氣絕緣層的兩主平 面上形成之配線圖案、及用以連接前述配線圖案間之導通 孔，並將構裝於前述配線圖案之電子元件及/或半導體配置 於前述電氣絕緣層的內部所成者，藉此，可提供將電子元 件及/或半導體內藏於電氣絕緣層，厚度可作薄、可高密度 ___25 _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂· i線- 550997 A7 _ B7____ 五、發明說明（Ί) 構裝之元件內藏模組。 (實施例1) 於本實施例中，將電氣絕緣層以下述的製程製作。將 熱硬化性的液狀環氧樹脂與作爲塡料之Si〇2，將塡料以質 量比70%的比例秤量，藉由攪拌混合機’製作成混合糊料 。將製作成之混合糊料，使用刮刀法在聚對苯二甲酸乙二 醇酯(PET)的離型膜(厚度：75μ m)上，加工成700μ m厚 度的片材形狀。於加工成片材狀之後，經過l〇5°C的乾燥 製程，作成未硬化狀態的電氣絕緣層。液狀環氧樹脂與塡 料的質量比，可選擇爲可維持片材的形狀之96%(塡料的質 量比）以下。片材的厚度，以易於進行乾燥製程之200μ m 以下爲佳，惟，按照內藏元件的高度，來形成厚的片材， 或於片材形成後藉由積層可得到所要的厚度。 其次，在對應於內導通孔之位置，使用二氧化碳雷射 形成貫通孔（直徑φ150μ m)。於形成貫通孔後，以銅粉(粒 徑：小於7μ m)與熱硬化性樹脂的混合物之導通孔糊料進 行印刷塡充。印刷塡充係使用擠壓棒，以PET膜作爲遮罩 。貫通孔徑，以較小者較適合於高密度構裝，實用上可使 用600μ m以下的尺寸者。 與上述製程並行，於PET載體膜(厚度：75μ m)上藉 由黏著劑黏合15μ m厚的銅箔（單面粗化）以疊合機 (laminator)貼合，藉由紫外線曝光、顯影、使用氯化亞鐵 之蝕刻，形成配線圖案。作爲配線設計規則，係使最小 L/S(線寬/線距)作成爲1〇〇/ι〇〇(μ m)，L/s亦以較小者適合 __ 26_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱)--- (請先閱讀背面之注意事項再填寫本頁) 裝 -l5J· -線 550997 A7 ___ —_B7 五、發明說明（、斗） 於高密度構裝，於構裝半導體裸晶片之場合，以2〇〇/2〇〇 /z m以下爲妥。 --I I I I I I I I--I I I (請先閱讀背面之注意事項再填寫本頁) 再將電子元件及/或半導體構裝於配線圖案上。電子元 件之構裝係使用導電性黏著劑。將導電性黏著劑藉由網版( 網目：#400/吋)塗布於配線圖案上，配置1〇〇5尺寸的電子 元件後，使用乾燥機(溫度：150°C)進行硬化。作爲電子元 件，係按照所要構成之模組，使用LCR等之晶片元件與熱 敏電阻或二極體。內藏之電子元件的尺寸亦以較小者適合 於高密度構裝，以1.6mm(3216尺寸)以下爲佳。半導體之 構裝，於封裝體之場合，係與電子元件同樣地使用導電性 黏著劑。又，於裸晶片之場合，係形成金突塊，再進行倒 裝片構裝。又，於配線基板亦同樣地構裝電子元件及/或半 導體。 --線· 對構裝好之電子元件，進行外觀檢查，對於有構裝缺 失（元件脫離或元件突出）的處所加以修復。亦對構裝好之 半導體藉由電氣連接之檢查來確認其構裝狀態。然後，進 行電路區塊的機能檢查，確認半導體本身的特性。對特性 不良的處所，進行元件之交換。 將上述製程中製作之構裝有電氣絕緣層及/或半導體之 配線圖案，以辨識標記爲基準可進行對位，加以積層、並 加壓。藉由加壓(5MPa)可將電氣絕緣層、電子元件及/或半 導體埋設到電氣絕緣層。於埋設後，在同壓力下，一邊加 熱，一邊以溫度：200°C、時間：2小時，進行加熱’使電 氣絕緣層硬化之同時將配線圖案轉印。 _27 _____ 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 550997 A7 ___B7 _____ 五、發明說明（/) (請先閱讀背面之注意事項再填寫本頁) 於電氣絕緣層的硬化後，將PET載體剝離，形成元件 內藏模組。此元件內藏模組，在表層具有用以構裝電子兀 件及/或半導體之空間，於內部亦配置有電子元件及/或半 導體，若將本實施例之元件內藏模組與通常的2維(表面) 構裝品以同樣面積加以比較，則本實施例的模組可構裝約 2倍的元件。反之，於欲構裝和通常的2維(表面)構裝品之 同數目的元件之場合，本實施例的模組’約一半的大小即 可。 (實施例2) 於本實施例中，以圖12所示般的構造製作成試料。其 係在內藏有電子元件之電氣絕緣層的上下配置配線基板之 構造，以導通孔連接上下的配線基板間。電子元件’係用 0603尺寸的晶片元件。電氣絕緣層，係以Si〇2作爲塡料 ，藉由質量比之調整，製作成使熱膨脹係數變化之試料。 電氣絕緣層的厚度爲400//m。配線基板係用玻璃環氧樹脂 基板(A基板），以及與電氣絕緣層爲相同材料所形成之配 線基板(B基板）。配線基板的厚度爲400〆m °導通孔係銅 粉與樹脂的混合物。導通孔與電氣絕緣餍(僅電氣絕緣層) 、構造體的電氣絕緣層之熱膨脹係數如表1所7^ ° _____ 28 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 550997 A7 五、發明說明（； 試料編號 配線基板
A
B 導通孔 僅電氣絕緣 層 20 構造體的電 氣絕緣層 43 17 電氣絕緣層 /導通孔 1.43 0.57 A 47 98 3.27 4 5 6 7 8 9 10 B A B A B A 30 100 150 200 45 190 101 301 155 488 200 •50 6.33 3.37 10.0 5.17 16.3 6.67 與電氣絕緣層爲相同材料所形成之配線基板⑺基板）時， 於作成構造體時的熱膨脹係數爲不相同。由於電氣絕緣層 及B基板並未摻入補強材料，故在χγζ方向顯示相同的 熱膨脹係數，而玻璃環氧樹脂基板由於摻入有玻璃布，故 於ΧΥ方向與Ζ方向的熱膨脹係數有相當的差異。前述A 基板之熱膨脹係數於χγ方向爲10ppm，於Z方向爲 150ppm的材料。作成構造體之場合，由於電氣絕緣層係黏 合固定於配線基板，故會受到楊氏模量高的配線基板(A基 板)所強制固定住。因此，無法朝χγ方向延展，致Z方向 的熱膨脹係數增加。以同樣材料之B基板用於配線基板之 場合’當然，熱膨脹係數不會有變化。對所製作之試料施 加熱循環試驗(-50〜270°C)時的導通孔的電阻値（斷開數)作 調查(表2)。 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） --—II--— — — — — — — · I I (請先閱讀背面之注意事項再填寫本頁} --線· 550997 A7B7 五、發明說明（^) 表2 試料編號 1 2 3 4 5 6 7 8 9 10 電氣絕緣層 /導通孔 1.43 0.57 3.27 1.50 6.33 3.37 10.0 5.17 16.3 6.67 斷開數 (/1000) 0 0 0 1 0 0 0 2 195 1 實驗的結果，試料編號9的試料發生了多數的斷開。 其原因，據推測係導通孔的熱膨脹係數與電氣絕緣層的熱 膨脹係數之差所導致者。即使電氣絕緣層爲相同材料，於 作成構造體時的熱膨脹係數的差，也會對導通孔的可靠性 有影響，藉由將熱膨脹係數之比設爲10倍以內，可提供可 靠性高的元件內藏模組。 〔元件符號說明〕 ----------------- (請先閱讀背面之注意事項再填寫本頁) · 101 、 201 、 301 電氣絕緣層 102 、 202 ' 302 配線圖案 103 、 203 、 303 導通孔 104 、 204 、 304 、 612 電子元件 105 、 205 、 305 焊料 106 、 108 配線圖案 107 內導通孔 109 、 211 兩面基板 206 載體 207 貫通孔 306 、 611 、 613 半導體 307 突塊 30 i線- 木紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 550997 A7 B7 五、發明說明（4 ) 308 、 408 、 508 、 608 708 、 808 、 908 509 609 710 1009 1010 1110 配線基板 非導電性膜(NCF) 密封樹脂 空隙 異向性導電膜(ACF) 遮蔽電極 電磁遮蔽層 (請先閱讀背面之注意事項再填寫本頁) 31 衣紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. 550997 A8B8C8D8 六、申請專利範圍 (請先閱讀背面之注意事項再塡寫本頁) I一種元件內藏模組，係含有··電氣絕緣層、在前述 電氣絕緣層的兩表面上一體化形成之配線、及用以連接前 述配線間之導通孔，於前述電氣絕緣層的內部，埋設有選 自電子元件及半導體之至少一種元件所成者，其特徵在於 前述配線之至少一方，係形成於配線基板的表面之配 線， 埋設於前述電氣絕緣層的內部之元件，係於埋設之前 搭載於前述配線基板上且構成一體化。 2.如申請專利範圍第1項之元件內藏模組，其係更進 一步在前述配線基板的外側主平面上構裝選自電子元件及 半導體之至少一種元件。 % 3·如申請專利範圍第1項之元件內藏模組，其中，前 述配線基板係選自兩面配線基板及多層配線基板之至少一 種的基板。 4. 如申請專利範圍第1項之元件內藏模組，其係於將 前述元件埋設至前述電氣絕緣層內部之前，已完成選自構 裝檢查及特性檢查之至少一種檢查。 5. 如申請專利範圍第1項之元件內藏模組，其係將前 述兀件沿前述電氣絕緣層的截面方向錯開而配置者。 6·如申請專利範圍第1項之元件內藏模組，其係在配 置於前述電氣絕緣層內部、且構裝於前述電氣絕緣層的兩 主平面之配線基板上的元件之至少一種之間插入遮蔽層。 7·如申請專利範圍第6項之元件內藏模組，其中，前 ____1 —___ 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公缝） 550997 as C8 D8 六、申請專利範圍 述遮蔽層，爲金屬箔配線圖案，或爲電磁遮蔽材。 (請先閱讀背面之注意事項再塡寫本頁) 8. 如申請專利範圍第1項之元件內藏模組，其中，前 述電子元件爲分立元件。 9. 如申請專利範圍第1項之元件內藏模組，其中，前 述半導體爲半導體裸晶片。 10. 如申請專利範圍第9項之元件內藏模組，其中，前 述半導體裸晶片係以倒裝片接合方式連接至前述配線上。 11. 如申請專利範圍第9項之元件內藏模組，其中，前 述半導體裸晶片係經硏削或硏磨加工。 12. 如申請專利範圍第1項之元件內藏模組，其中，前 述元件係於前述電氣絕緣層內部呈對向配置。 13. 如申請專利範圍第1項之元件內藏模組，其中，前 述電氣絕緣層的厚度方向之熱膨脹係數，爲導通孔的熱膨 脹係數之10倍以下。 14. 如申請專利範圍第1項之元件內藏模組，其中，前 述電氣絕緣層，係含有樹脂與塡料，塡料含有量爲50質量 %〜95質量％。 15. —種元件內藏模組之製造方法，該元件內藏模組係 含有：電氣絕緣層、在前述電氣絕緣層的兩表面上一體化 形成之配線、及用以連接前述配線間之導通孔，於前述電 氣絕緣層的內部，埋設有選自電子元件及半導體之至少一 種元件所成者； 前述配線之至少一方，係形成於配線基板的表面之配 線； 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐） 550997 A8 B8 C8 D8 六、申請專利範圍 硏磨。 23. 如申請專利範圍第15項之元件內藏模組之製造方 法，其係於前述半導體構裝後，對前述半導體施以硏削或 硏磨。 24. 如申請專利範圍第15項之元件內藏模組之製造方 法，其係於將選自前述半導體及電子元件之至少一種埋設 至前述電氣絕緣層時，且在埋設的同時進行前述電氣絕緣 層的硬化。 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐)
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US20050269681A1 (en) 2005-12-08
CN1418048A (zh) 2003-05-14
DE60232572D1 (de) 2009-07-23
KR20030032892A (ko) 2003-04-26
CN1293790C (zh) 2007-01-03
JP2008294475A (ja) 2008-12-04
JP4272693B2 (ja) 2009-06-03
EP2056349A1 (en) 2009-05-06
EP1304742A2 (en) 2003-04-23
US20030090883A1 (en) 2003-05-15
EP1304742B1 (en) 2009-06-10
US7294587B2 (en) 2007-11-13
US6975516B2 (en) 2005-12-13
EP1304742A3 (en) 2006-03-29

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