TW201417179A - 低成本流動性介電質薄膜 - Google Patents

低成本流動性介電質薄膜 Download PDF

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TW201417179A
TW201417179A TW102131319A TW102131319A TW201417179A TW 201417179 A TW201417179 A TW 201417179A TW 102131319 A TW102131319 A TW 102131319A TW 102131319 A TW102131319 A TW 102131319A TW 201417179 A TW201417179 A TW 201417179A
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plasma
dielectric layer
substrate
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Amit Chatterjee
Abhijit Basu Mallick
Nitin K Ingle
Brian Underwood
Kiran V Thadani
Xiaolin Chen
Abhishek Dube
Jing-Mei Liang
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Applied Materials Inc
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Abstract

茲描述形成介電質層的方法。該方法藉由化學氣相沉積使用局部電漿沉積含矽薄膜。該含矽薄膜在低基板溫度下的沉積過程中是流動性的。矽前驅物(例如矽烷胺、高級矽烷或鹵化矽烷)被輸送到基板處理區域，並在局部電漿中被激發。第二電漿蒸汽或氣體在該基板處理區域中與該矽前驅物結合，並且可以包括氨氣、氮氣(N2)、氬氣、氫氣(H2)及/或氧氣(O2)。當使用相對較低的功率激發局部電漿時，本文中揭示的與這些蒸氣/氣體組合結合的設備架構已被發現在基板溫度低於或約200℃時可產生流動性沉積。

Description

低成本流動性介電質薄膜 【相關申請案的交叉引用】
本專利申請案主張由Chatterjee等人於2012年09月11日提出申請且標題為「低成本流動性介電質薄膜(LOW COST FLOWABLE DIELECTRIC FILMS)」的美國臨時專利申請案第61/699,495號的優先權權益，為了所有的目的將該申請案全部併入本文中。
本發明係關於低成本流動性介電質薄膜。
自從幾十年前推出以來，半導體元件的幾何形狀大小已經大為縮小。現代的半導體生產設備例行地生產具有45nm、32nm及28nm特徵尺寸的元件，並且新的設備正被開發和實施來製作具有甚至更小的幾何形狀的元件。特徵尺寸的縮小導致元件上的結構特徵具有減小的空間尺寸。元件上的縫隙和溝槽的寬度已經縮小到縫隙深度對寬度的深寬比變 成高到足以使使用介電質材料填充縫隙具有挑戰性的點。沉積的介電質材料很容易在縫隙完全填滿之前就把頂部堵塞，而在縫隙的中間產生孔隙或接縫。
多年來，許多技術已被開發來避免讓介電質材料堵 塞縫隙的頂部或「治愈」已經形成的孔隙或接縫。一種方法是從具有高流動性的前驅物材料著手，該前驅物材料可以以液相被施加到旋轉的基板表面(例如，SOG沉積技術)。這些流動性的前驅物可以流入並填充很小的基板縫隙，而不會形成孔隙或弱接縫。然而，一旦這些高流動性的材料被沉積，則該等材料必須被硬化成固體的介電質材料。
在許多情況下，硬化包括加熱處理，以從沉積的材 料去除碳和羥基基團，而留下固體介電質，例如氧化矽。不幸的是，離開的碳和羥基物種往往會在硬化的介電質中留下孔隙，而降低最終材料的品質。此外，硬化的介電質也有體積收縮的傾向，這會在介電質和周圍基板的界面處留下裂縫和空間。在某些情況下，硬化介電質的體積會減少40%或更多。
旋塗介電質(SOD)也已被用於流入圖案化基板上 的特徵。該材料通常從含有矽、氮和氫的矽氮烷型薄膜被轉化成氧化矽。介電質層作為液體施加產生了很厚的層，並使填充小的縫隙變得困難。
因此，需要新的沉積製程和材料來在結構化基板上 使用氣相沉積技術形成介電質材料。本申請中解決了這個和其他的需求。
茲描述形成介電質層的方法。該方法藉由化學氣相 沉積使用局部電漿沉積含矽薄膜。該含矽薄膜在低基板溫度下的沉積過程中是流動性的。矽前驅物(例如矽烷胺、高級矽烷或鹵化矽烷)被輸送到基板處理區域，並在局部電漿中被激發。第二電漿蒸汽或氣體在該基板處理區域中與該矽前驅物結合，並且可以包括氨氣、氮氣(N2)、氬氣、氫氣(H2)及/或氧氣(O2)。當使用相對較低的功率激發局部電漿時，本文中揭示的與這些蒸氣/氣體組合結合的設備架構已被發現在基板溫度低於或約200℃時可產生流動性沉積。該製程產生瞬態物種，在沉積過程中該瞬態物種在薄膜固化填充圖案化基板中的縫隙之前產生流動性薄膜。
本發明之實施例包括在圖案化基板上形成介電質層 的方法。該方法包括使矽前驅物流入該基板處理區域。該方法進一步包括使電漿蒸氣/氣體流入基板處理區域。該方法進一步包括在該基板處理區域中藉由施加小於或約0.3W/cm2的電漿功率密度來擊發電漿。該方法進一步包括在該圖案化基板上形成該介電質層。該介電質層包括矽和碳或氮中之一者。在沉積過程中，該介電質層為流動性的。
在以下的部分描述中提出另外的實施例與特徵，而 且對於本技術領域中具有通常知識者而言，在檢視本說明書之後，部分的該等實施例與特徵將變得顯而易見，或者是可藉由實施本發明而學習部分的該等實施例與特徵。藉由說明 書中描述的手段、組合以及方法可實現及獲得本發明之特徵與優點。
100‧‧‧方法
102‧‧‧步驟
104‧‧‧步驟
106‧‧‧步驟
1001‧‧‧系統
1002‧‧‧FOUP
1004‧‧‧機器人手臂
1006‧‧‧低壓保持區域
1008a‧‧‧基板處理室
1008b‧‧‧基板處理室
1008c‧‧‧基板處理室
1008d‧‧‧基板處理室
1008e‧‧‧基板處理室
1008f‧‧‧基板處理室
1010‧‧‧第二機器人手臂
1101‧‧‧基板處理室
1110‧‧‧遠端電漿系統
1111‧‧‧氣體入口組件
1112‧‧‧第一通道
1113‧‧‧第二通道
1120‧‧‧腔室電漿區域
1121‧‧‧蓋體
1124‧‧‧絕緣環
1126‧‧‧長度
1150‧‧‧通孔的最小直徑
1151‧‧‧中空容積
1153‧‧‧噴灑頭
1155‧‧‧小孔
1156‧‧‧通孔
1170‧‧‧基板處理區域
藉由參照本說明書的剩餘部分及圖式可以實現對本發明的本質與優點之進一步瞭解，其中貫穿該等圖示使用相同的元件符號來指稱類似的組件。在某些情況中，次標號係與元件符號相關，並跟隨在連字號之後來表示多個類似組件中之一者。當提及某一元件符號而未詳述存在的次標號時，則意圖指稱所有這樣的多個類似組件。
第1圖為圖示依據本發明之實施例製作氧化矽薄膜的選定步驟之流程圖。
第2圖圖示依據本發明之實施例的基板處理系統。
第3A圖圖示依據本發明之實施例的基板處理腔室。
第3B圖圖示依據本發明之實施例的氣體分配噴灑頭。
茲描述形成介電質層的方法。該方法藉由化學氣相沉積使用局部電漿沉積含矽薄膜。該含矽薄膜在低基板溫度下的沉積過程中是流動性的。矽前驅物(例如矽烷胺、高級矽烷或鹵化矽烷)被輸送到基板處理區域，並在局部電漿中被激發。第二電漿蒸汽或氣體在該基板處理區域中與該矽前驅物結合，並且可以包括氨氣、氮氣(N2)、氬氣、氫氣(H2) 及/或氧氣(O2)。當使用相對較低的功率激發局部電漿時，本文中揭示的與這些蒸氣/氣體組合結合的設備架構已被發現在基板溫度低於或約200℃時可產生流動性沉積。該製程產生瞬態物種，在沉積過程中該瞬態物種在薄膜固化填充圖案化基板中的縫隙之前產生流動性薄膜。
進行電漿化學氣相沉積或電漿增強化學氣相沉積(PECVD)牽涉到在基板處理區域內施加「局部」電漿來有效沉積。本發明人發現，使本文所揭示的矽前驅物(例如矽烷胺，諸如TSA)與電漿蒸氣/氣體一起流動可產生包括矽、氮、氫的介電質層。該薄膜已被發現可在沉積過程中流動，這有利於填充半導體處理過程中使用的圖案化基板上常見的縫隙。現在將描述有關形成氧化矽層的方法和系統的其他細節。
示例性氧化矽形成製程
第1圖為圖示依據本發明之實施例製作介電質薄膜的方法100中的選擇步驟之流程圖。示例性方法100包括提供三矽烷胺至基板處理區域(步驟102)。該方法進一步包括使氨氣流入基板處理區域(步驟104)。可以使三矽烷胺和氨氣同時流入該基板處理區域，而且在本發明之實施例中，在進入之前三矽烷胺和氨氣可以未被電漿激發。電漿激發係藉由施加射頻功率到基板處理區域的任一側上的電容極板來提供(步驟106)。例如，該電容極板可被定位在該基板處理區域的上方和下方。電漿激發氨氣和三矽烷胺的組合導致圖案 化基板表面上形成流動性介電質層(包含矽、氮、氫)。
一般來說，本文中可以將三矽烷胺稱為含有矽烷胺的矽前驅物，但該矽前驅物也可以含有碳。該矽前驅物可以含有三矽烷胺、二矽烷胺或單矽烷胺中之一者。該矽前驅物在氣相中以被載氣攜帶的氣體或蒸汽形式輸送。如稍後將詳細討論的，沒有碳減少了沉積薄膜的收縮。然而，在揭示的實施例中，矽前驅物和介電質薄膜含有碳。碳化矽和矽碳氮化物在某些製程流中是理想的，而且在使用本文揭示的方法沉積的流動性介電質層之定義中。如此說來，在揭示的實施例中，該矽前驅物可以是無氧且無碳的。缺少氧導致由該前驅物形成的流動性介電質層中的矽烷醇(Si-OH)基團的濃度較低或可忽略。沉積薄膜中過多的矽烷醇部分會在從沉積層去除羥基(-OH)基團的沉積後步驟過程中導致孔隙率和收縮率提高。
矽前驅物的具體實例可以包括矽烷胺，例如H2N(SiH3)、HN(SiH3)2及N(SiH3)3。該矽前驅物也可以是較高級的矽烷，本文中定義為SinH2n+2，其中n>=3。在本發明的實施例中，矽前驅物也可以是鹵化矽烷，而且可以是氯化矽烷。本文中將鹵化矽烷定義為SinH2n+2，其中在揭示的實施例中n>=1或n>=2，其中至少一個氫原子被移除並被鹵素取代。在揭示的實施例中，該矽前驅物為例如六氯二矽烷(Si2Cl6)。在不同的實施例中，矽前驅物的流動速率可以為大於或約40sccm、大於或約60sccm或大於或約100sccm。本文中給出的所有流動速率是指雙腔室的基板處理系統。單 晶圓系統將需要這裡的一半流動速率，而且其他的晶圓尺寸會需要以處理面積縮放的流動速率。該矽前驅物可以與另外的氣體混合，該氣體可以作為載氣、反應氣體或上述兩者。
電漿蒸氣/氣體與該矽前驅物結合流入該基板處理 區域或分開流入該基板處理區域，在該基板處理區域該矽前驅物和該電漿蒸氣/氣體的組合在電漿中被激發。示例性電漿蒸氣/氣體除了其他的氣體以外還包括氨氣、H2、N2、O2、H2O、O3、H2O2、N2O、NO、He及Ar。該電漿蒸氣/氣體可以含有碳，以形成碳化矽和SiCN薄膜，在這種情況下，該電漿蒸氣/氣體可以包括甲烷、乙烷、丙烷、丁烷、乙炔或其他的烴。 在揭示的實施例中，該電漿蒸氣/氣體的流動速率可以為大於或約25sccm、大於或約40sccm或大於或約50sccm。在實施例中氧的來源可能不包含在內，以提高流動性。
如實例中所述，可以使用電容耦合電漿(CCP)架構點燃電漿，該電容耦合電漿架構使用接近13.56MHz的射頻。然而，也可以使用其他的頻率和激發源，例如較高及/或較低的射頻(例如在微波區域的2.4GHz或350kHz)。也可以與感應耦合電漿(ICP)組合使用或以ICP取代CCP。電漿功率相對較低，以在形成的薄膜中引發流動誘導的化學暫態形成。對於300mm的基板，功率可以在10-350W的範圍中。在本發明的實施例中，功率密度可以為每平方公分的圖案化基板面積小於或約0.3W、每平方公分的圖案化基板面積小於或約0.25W、每平方公分的圖案化基板面積小於或約0.2W或每平方公分的圖案化基板面積小於或約0.15W。在揭示的 實施例中，在介電質層的形成過程中，功率可以是連續的而不是脈衝的。在揭示的實施例中，擊發電漿意指施加0.025W到0.30W(每平方公分的圖案化表面積)的電漿功率到該基板處理區域。圖案化的表面積係計算為在單一平面上通過圖案化特徵的面積(通常在基板的頂部表面上)。電漿激發也可以藉由閃耀紫外(UV)光進入該基板處理區域來實現。
流動該矽前驅物包含在形成該流動性介電質層的整 個過程中供應該矽前驅物的連續流動到該基板處理區域。同樣地，擊發電漿包含在形成該流動性介電質層的整個過程中連續地施加電漿功率。已經發現的是，脈衝化該矽前驅物流動或該電漿功率任一者(並且當然可以是兩者)可產生保形的膜，而不是本文所述的理想流動性介電質薄膜。在本發明的實施例中，在形成該流動性介電質層的整個過程中電漿蒸氣/氣體的流動也是連續的。
在該基板處理區域中，該矽前驅物和電漿蒸氣/氣體混合並在電漿中反應，以在沉積基板上沉積該流動性介電質薄膜。該流動性介電質薄膜含有矽、氮及氫，而且在本發明的實施例中可以僅由這些元素所組成。沉積的介電質薄膜具有與傳統的矽氮化物(Si3N4)薄膜沉積技術不同的流動特性。在形成過程中此流動性本質允許薄膜在固化之前流入狹窄的特徵中。含矽氮及氫的薄膜中的氮可以源自該電漿蒸氣/氣體和該矽前驅物，因為該矽前驅物和三氟化氮皆可以含有氮。
含矽薄膜的流動性可能是由於如上所述在低強度局部電漿存在下如本文概述混合電漿蒸氣/氣體與矽前驅物而產 生的各種性質所導致的。這些性質可以包括短鏈聚矽氮烷聚合物的存在，該短鏈聚矽氮烷聚合物可以具有氫及/或鹵素端基。這些短鏈生長而網絡化，以在薄膜形成過程中和之後形成更緻密的介電質材料。例如，沉積薄膜可以具有矽氮烷型的Si-NH-Si主鏈(即無碳的Si-N-H薄膜)。
在一些實施例中，所有供應到該基板處理區域中的 電漿的前驅物是無碳的，因此沉積的含矽氮氟和氫薄膜基本上也是無碳的。當然，「無碳」並不一定意味著薄膜連微量的碳都沒有。碳污染物可能會存在於前驅物材料中，該前驅物材料找到自己的方式進入沉積的含矽和氮前驅物。然而，這些碳雜質的量遠小於在具有碳基團(例如四乙氧基矽烷(TEOS)、四甲基二矽氧烷(TMDSO)等)的矽前驅物中會被發現的。
也可以選擇矽前驅物和電漿蒸氣/氣體來形成碳化 矽或矽碳氮化物(SiCN)，而不是上述的氮化矽。在所有的情況下，氮化矽、碳化矽或SiCN可以含有一些可能有助於薄膜流動性的氫。在揭示的實施例中，流動性介電質薄膜是由矽、碳和氫組成的。流動性介電質薄膜也可以由矽和碳組成。在揭示的實施例中，流動性介電質薄膜是由矽、氮和氫所組成的。流動性介電質薄膜也可以由矽和氮組成。在揭示的實施例中，流動性介電質薄膜是由矽、碳、氮和氫所組成的。流動性介電質薄膜也可以由矽、碳和氮組成。
在揭示的實施例中，在流動性介電質層的沉積過程中基板的溫度可以是小於或約200℃、小於或約150℃、 小於或約125℃、小於或約100℃、小於或約75℃、小於或約50℃或小於或約30℃。例如，在從矽烷胺和電漿蒸氣/氣體生長矽-氮-氫化物薄膜時，基板溫度可以小於150。℃。對於另一個實例，在從更高級矽烷和電漿蒸氣/氣體生長矽-氮-氫化物薄膜時，基板溫度可以小於80℃。同樣在揭示的實施例中，在從任何等級的鹵化矽烷和電漿蒸氣/氣體生長矽-氮-氫化物薄膜時，基板溫度可以小於150℃。
在揭示的實施例中，在沉積過程中該基板處理區域 中的壓力可以大於或約5托、大於或約10托、大於或約15托或大於或約20托。在揭示的實施例中，在沉積過程中該基板處理區域中的壓力可以小於或約50托、小於或約40托或小於或約30托。依據本發明的實施例，上限可以與下限組合，以得出另外的壓力範圍。在揭示的實施例中，流動性介電質薄膜的沉積速率可以大於或約400Å/min、大於或約500Å/min、大於或約600Å/min或大於或約700Å/min。固化後的沉積介電質層之厚度可以遠小於使用整體旋塗技術(SOG、SOD)所可能有的。在揭示的實施例中，該厚度可以小於或約25nm、小於或約20nm、小於或約15nm或小於或約10nm。這些厚度係在沉積薄膜的流動性特性減輕後垂直於圖案化基板的主平面所量測的。
現在描述選擇性的步驟以有助於固化薄膜(以去除 一些可使新生薄膜流動但不再被需要的成分)。在沉積流動性介電質薄膜之後，可以在高溫下處理沉積基板，以去除揮發性物種。沉積基板可以保持在該基板處理區域進行固化，或 是基板可以被轉移到不同的腔室中進行熱處理。在揭示的實施例中，基板的固化溫度可以小於或約600℃、小於或約400℃、小於或約300℃、小於或約250℃、小於或約200℃或小於或約150℃。在本發明的實施例中，基板的溫度可以大於或約室溫(25℃)、大於或約50℃、大於或約100℃、大於或約150℃或大於或約200℃。依據另外的揭示實施例，可以將任何上限與任何下限組合，以形成另外的基板溫度範圍。
如已經討論過的，固化操作可以在沉積室發生，或 是基板可以被轉移到異地的固化腔室。在這兩種情況下，可以重複沉積操作和固化操作，以形成沉積-固化-沉積-固化的製程程序。在固化操作過程中，電漿處理可以存在於該基板處理區域中，並且電漿可以是感應耦合電漿(ICP)或電容耦合電漿(CCP)。在揭示的實施例中，電漿可以是高密度電漿(HDP)。電漿處理可以藉由施加頻率在射頻(RF)範圍(例如13.56MHz)或在微波頻率範圍(例如2.4GHz)中的功率來實現。在本發明的實施例中，電漿可以由各種電漿輸入氣體例如NH3、Ar、N2、Cl2或He所形成。
圖案化基板可以具有複數個縫隙，該複數個縫隙係用於基板上形成的元件組件(例如電晶體)的間距和結構。該等縫隙具有的高度和寬度可以定義高度對寬度(即，H/W)的深寬比(AR)，該深寬比明顯大於1：1(例如5：1或更大、6：1或更大、7：1或更大、8：1或更大、9：1或更大、10：1或更大、11：1或更大、12：1或更大等)。在許多情況下，高的AR是由於小的縫隙寬度，該縫隙寬度範圍從約90nm至約22nm 或更小(例如小於90nm、小於65nm、小於50nm、小於45nm、小於32nm、小於22nm、小於16nm等)。流動性介電質層是理想的，因為流動性介電質層可以比非流動性的薄膜或使用旋塗技術的整體流動性薄膜更容易填充示例性的狹窄縫隙，該旋塗技術例如旋塗玻璃(SOG)和旋塗介電質(SOD)。 沉積薄層的流動性材料降低了在縫隙被完全填滿之前過早堵塞縫隙的頂部而在縫隙的中間留下孔隙的可能性。介電質層可以在流動性沉積之後被固化。在示例性氧化矽沉積系統的描述過程中可以導入另外的參數。
示例性氧化矽沉積系統
可以實施本發明之實施例的沉積室可以包括高密度電漿化學氣相沉積(HDP-CVD)腔室、電漿增強化學氣相沉積(PECVD)腔室、次大氣壓化學氣相沉積(SACVD)腔室以及熱化學氣相沉積室，還有其他類型的腔室。可以實施本發明之實施例的化學氣相沉積(CVD)系統具體實例包括CENTURA ULTIMA® HDP-CVD腔室/系統以及PRODUCER® PECVD腔室/系統，皆可向美國加州聖克拉拉市的應用材料公司(Applied Materials,Inc.of Santa Clara,Calif.)取得。
可以與本發明的示例性方法一起使用的基板處理腔室之實例可以包括在2006年05月30日提出申請、標題為「用於介電質縫隙填充的處理腔室(PROCESS CHAMBER FOR DIELECTRIC GAPFILL)」且共同受讓給Lubomirsky等人的美國臨時專利申請案第60/803,499號中所圖示和描述者，為 了所有的目的將該專利申請案之全部內容以引用方式併入本文中。另外的示例性系統可以包括美國專利第6,387,207號和第6,830,624號中所圖示和描述者，為了所有的目的將該等專利以引用方式併入本文中。
可以將沉積系統之實施例結合到更大的製造系統 中，以製造積體電路晶片。第2圖圖示依據所揭示實施例的一個這樣的沉積、烘烤及固化腔室系統1001。在該圖中，一對FOUP(晶圓傳送盒)1002供應基材基板(例如直徑300毫米(mm)的晶圓)，該基板由機器人手臂1004接收，並在被放入其中一個晶圓處理室1008a-f之前被放入低壓保持區域1006。可以使用第二機器人手臂210來在保持區域1006和處理室1008a-f之間來回運送基板晶圓。
處理腔室1008a-f可以包括一或更多個系統組件， 用以對基板晶圓上的流動性介電質薄膜進行沉積、退火、固化及/或蝕刻。在一個架構中，可以使用兩對處理腔室(例如1008c-d和1008e-f)在基板上沉積流動性介電質材料，而且可以使用第三對處理腔室(例如1008a-b)對沉積的介電質進行退火。在另一種架構中，可以配置相同的兩對處理腔室(例如1008c-d和1008e-f)皆在基板上進行流動性介電質薄膜的沉積和退火，同時可以使用第三對腔室(例如1008a-b)來紫外線(UV)或電子束固化沉積的薄膜。在仍另一種架構中，可以配置全部的三對腔室(例如1008a-f)在基板上進行流動性介電質薄膜的沉積和固化。在又另一種架構中，可以使用兩對處理腔室(例如1008c-d和1008e-f)皆沉積和UV或電 子束固化流動性介電質，同時可以使用第三對處理腔室(例如1008a-b)來對介電質薄膜進行退火。可以在與不同的實施例中所圖示的製造系統分離的腔室中進行所描述的任一或更多種製程。
另外，可以將處理腔室1008a-f中之一或更多者配 置為濕式處理腔室。這些處理腔室包括在含有水氣的氛圍中加熱流動性介電質薄膜。因此，系統1001的實施例可以包括濕式處理腔室1008a-b和退火處理腔室1008c-d，以在沉積的介電質薄膜上進行濕式與乾式退火兩者。
第3A圖為依據所揭示實施例的基板處理腔室 1101。遠端電漿系統(RPS)1110可以處理氣體，然後該氣體經由氣體入口組件1111前進。可以在氣體入口組件1111內看到兩個截然不同的氣體供應通道。第一通道1112攜帶通過遠端電漿系統(RPS)1110的氣體，而第二通道1113繞過RPS 1110。在揭示的實施例中，第一通道1112可用於製程氣體，並且第二通道1113可用於處理氣體。圖示蓋體(或導電頂部)1121和穿孔的分隔板(噴灑頭1153)之間具有絕緣環1124，絕緣環1124使得AC電勢可被相對於噴灑頭1153施加到蓋體1121。製程氣體經由第一通道1112進入腔室電漿區域1120，並且製程氣體可以在單獨的腔室電漿區域1120中或在腔室電漿區域1120與RPS 1110的組合中被電漿激發。本文中可以將腔室電漿區域1120及/或RPS 1110的組合稱為遠端電漿系統。穿孔的分隔板(也可指稱為噴灑頭)1153將腔室電漿區域1120與噴灑頭1153下方的基板處理區域1170分 隔。噴灑頭1153允許電漿存在於腔室電漿區域1120中，以避免在基板處理區域1170中直接激發氣體，同時還允許激發的物種從腔室電漿區域1120進入基板處理區域1170。
噴灑頭1153被定位在腔室電漿區域1120和基板處 理區域1170之間，並允許腔室電漿區域1120內產生的電漿流出物(前驅物或其他氣體的激發衍生物)通過複數個通孔1156，通孔1156穿過板的厚度。噴灑頭1153還具有一或更多個中空容積1151，中空容積1151可以被蒸氣或氣體形式的前驅物(例如含矽前驅物)填滿，並通過小孔1155進入基板處理區域1170，但不是直接進入腔室電漿區域1120。在此揭示的實施例中，噴灑頭1153的厚度比通孔1156的最小直徑1150之長度更長。為了保持顯著濃度的激發物種從腔室電漿區域1120滲透到基板處理區域1170，可以藉由形成部分貫穿噴灑頭1153的通孔1156之較大直徑部分來限制通孔的最小直徑1150之長度1126。在揭示的實施例中，通孔1156的最小直徑1150之長度可以與通孔1156的最小直徑屬於相同數量級或更短。
在圖示的實施例中，噴灑頭1153可以(經由通孔 1156)分配製程氣體，該製程氣體含有電漿蒸氣/氣體，例如氨氣和矽前驅物。在實施例中，該前驅物可以不在腔室電漿區域1120中被激發，因為只需要局部的電漿。值得注意的是，任何的前驅物皆可以經由通孔1156或經由小孔1155被供應到基板處理區域1170中，因為此製程牽涉到藉由基板處理區域1170內的局部電漿來激發。該製程氣體進入基板處理區域 1170，並在局部電漿中被激發而在圖案化基板上形成流動性介電質層。
在實施例中，通孔1156的數量可以在約60至約2000之間。通孔1156可以具有各種不同的形狀，但最容易製作成圓形。在揭示的實施例中，通孔1156的最小直徑1150可以在約0.5mm和約20mm之間，或在約1mm和約6mm之間。在選擇通孔的橫截面形狀上也有緯度之分，該橫截面形狀可以是圓錐形、圓柱形或上述兩種形狀之組合。在不同的實施例中，用於將氣體導入基板處理區域1170的小孔1155之數量可以在約100和約5000之間，或在約500和約2000之間。小孔1155的直徑可以在約0.1mm和約2mm之間。
第3B圖為依據揭示的實施例處理腔室中使用的噴灑頭1153之仰視圖。噴灑頭1153與第3A圖中圖示的噴灑頭一致。描繪的通孔1156在噴灑頭1153的底部具有較大的內徑(ID)，而且在噴灑頭1153頂部具有較小的ID。小孔1155大致上均勻地分佈在噴灑頭的表面上，即使在通孔1156之間亦然，這有助於提供比本文所述的其他實施例更均勻的混合。
當經由噴灑頭1153中的通孔1156到達的電漿流出物與源自中空容積1151經由小孔1155到達的含矽前驅物結合時，便在基板處理區域1170內由基座(未圖示)支撐的基板上形成了示例性的薄膜。雖然可以在基板處理區域1170裝設支援用於其他製程(例如固化)的電漿之配備，但在示例性薄膜的生長過程中並無電漿存在。
電漿可以在噴灑頭1153上方的腔室電漿區域1120 中或噴灑頭1153下方的基板處理區域1170中被點燃。腔室電漿區域1120中存在電漿，以從含氮和氫氣體的進入流產生自由基氮前驅物。在處理腔室的導電性頂部(蓋體1121)和噴灑頭1153之間施加通常在射頻(RF)範圍中的交流電壓，以在沉積過程中在腔室電漿區域1120中點燃電漿。RF電源產生13.56MHz的高射頻頻率，但也可能會產生單獨的其他頻率或與13.56MHz頻率結合的其他頻率。
在介電質層形成期間或在清洗鄰接基板處理區域 1170的內表面的同時，當基板處理區域1170中的底部電漿開啟時，可以使頂部電漿停留在很低或無功率下。藉由在噴灑頭1153和基座或腔室底部之間施加交流電壓而點燃基板處理區域1170中的電漿。可以在電漿存在的同時將清洗氣體導入基板處理區域1170。
基座可以具有熱交換通道，熱交換流體經由該熱交 換通道流入，以控制基板的溫度。這種架構允許基板溫度被冷卻或加熱，以保持相對低溫(從室溫到約120℃)。熱交換流體可以包含乙二醇和水。可以使用以平行同心圓形式配置成兩個圈的嵌入式單迴路嵌入式加熱器元件來電阻式加熱基座的晶圓支撐盤(較佳為鋁、陶瓷或上述物質之組合)，以實現相對高溫(約120℃至約1100℃)。加熱器元件的外部可以與支撐盤的周邊相鄰，而加熱器元件的內部係沿著具有較小外徑的同心圓路徑。接到加熱器元件的接線通過基座的底桿。
基板處理系統係由系統控制器所控制。在示例性的 實施例中，該系統控制器包括硬碟磁碟機、軟碟磁碟機及處理器。該處理器包含單板電腦(SBC)、類比和數位輸入/輸出板、介面板及步進馬達控制器板。CVD系統的各種部件符合Versa模件歐洲(Versa Modular European,VME)標準，VME標準定義板、卡片機架以及連接器的尺寸和類型。VME標準還定義具有16位元數據匯流排和24位元定址匯流排的匯流排結構。
系統控制器控制沉積系統的所有活動。該系統控制 器執行系統控制軟體，該系統控制軟體為儲存在電腦可讀媒體中的電腦程式。較佳地，該媒體為硬碟磁碟機，但該媒體也可以是其他種類的記憶體。該電腦程式包括指令組，該指令組指示時間、氣體混合物、腔室壓力、腔室溫度、RF功率位準、基座位置以及其他特定製程的參數。也可以使用其他儲存在其他記憶體裝置(包括例如軟碟或其他適當的磁碟機)的電腦程式來指示系統控制器。
可以使用由系統控制器執行的電腦程式產品來實施 在基板上沉積薄膜堆疊的製程、將薄膜轉化成氧化矽或用於清洗腔室的製程。可以用任何現有的電腦可讀程式語言來撰寫電腦程式譯碼：例如68000組合語言、C、C++、Pascal、Fortran或其他的電腦可讀程式語言。使用現有的文本編輯器將適當的程式譯碼輸入單一檔案或多個檔案中，並儲存或體現於電腦可用媒體中，例如電腦的記憶體系統。假使輸入的譯碼內文屬於高階語言，則編譯該譯碼，然後將產生的編譯譯碼與預編譯的微軟視窗®(Microsoft Windows®)程式館常 式之目標譯碼聯結。為了執行該經聯結、編譯的目標譯碼，系統使用者喚起目標譯碼，致使電腦系統載入記憶體中的譯碼。然後CPU讀取並執行譯碼，以進行程式中確認的任務。
使用者與控制器之間的介面係經由平板觸摸感應式 監視器。在較佳的實施例中使用二個監視器，一個組裝於潔淨室牆壁上供操作員使用，而另一個組裝於牆壁外面供服務技師使用。該二個監視器可同時顯示相同的資訊，在任一情況中在同一時間只有一個監視器接受輸入。為了要選擇特殊的畫面或功能，操作員可觸碰觸摸感應式監視器的指定區域。經觸碰的區域會改變其彰顯的顏色，或者會顯示出新的選單或畫面，以確認操作員與觸摸感應式監視器之間的溝通。可以使用其他的裝置(如鍵盤、滑鼠或其他的指向或溝通裝置)來取代該觸摸感應式監視器，或是除了該觸摸感應式監視器之外可同時使用該等其他的裝置，以容許使用者與系統控制器溝通。
本文中使用的「基板」可為支撐基板，該支撐基板 上可有或無層形成。該支撐基板可以是絕緣體或具有各種摻雜濃度與分佈的半導體，而且例如該支撐基板可以是半導體基板，該半導體基板的類型與製造積體電路中所使用的半導體基板類型相同。「氧化矽」層可以包括少量濃度的其他元素組分，例如氮、氫、碳及類似者。在一些實施例中，氧化矽主要由矽和氧組成。用語「前驅物」係用以指稱任何製程氣體，該製程氣體參與反應，以從表面移除材料或沉積材料於基板上。處於「激發態」的氣體係描述其中至少某些氣體分 子處於振動激發、離解及/或離子化狀態的氣體。氣體(或前驅物)可以是兩種或更多種氣體(或前驅物)的組合。「自由基前驅物」係用於描述電漿流出物(處於激發態且激發電漿的氣體)，該電漿流出物參與反應，以從表面移除材料或沉積材料於基板上。「自由基氮前驅物」為含有氮的自由基前驅物，以及「自由基氫前驅物」為含有氫的自由基前驅物。片語「惰性氣體」係指任何當蝕刻或被併入薄膜中不形成化學鍵結的氣體。示例性的惰性氣體包括鈍氣，但也可以包括其他氣體，只要當微量(典型上)陷入薄膜中時無化學鍵結形成即可。
貫穿全文使用用語「溝槽」，但並非暗示蝕刻出的幾何形狀具有大的水平深寬比。從表面上方觀看，溝槽可能會呈現圓形、橢圓形、多邊形、矩形或各式各樣的其他形狀。用語「通孔」是用來指稱低深寬比的溝槽，該溝槽可能會或可能不會被填充金屬來形成垂直的電連線。如本文中所使用的，保角層係指表面上大致均勻的材料層具有與該表面相同的形狀，亦即該層的表面與被覆蓋的表面大體上是平行的。在本技術領域中具有通常知識之人士將理解到，所沉積的材料可能無法100%保角，因此，用語「大體上」容許可接受的誤差。
有了揭示的幾個實施例，在本技術領域中具有通常知識者將理解到，可以在不偏離本發明之精神下使用各種修改、替代結構以及均等物。此外，並未描述數個習知的製程及元件，以避免不必要地混淆本發明。因此，不應將以上描 述視為限制本發明之範圍。
當提供數值的範圍時，應瞭解到，除非內文以其他 方式清楚指明，否則在該範圍的上限與下限之間、每個到下限單位的十分之一之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中，而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值，該等較小範圍中的每個範圍亦被涵括於本發明中，取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時，排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明，否則本文中與隨附申請專利範圍中使用的單數形式「一」及「該」包括複數的指示對象。因此，舉例來說，提及「一製程」係包括複數個該種製程，而提及「該前驅物」係包括提及一或更多個前驅物及其為本技術領域中具有通常知識者所習知的均等物，以此類推。
同樣地，當用於本說明書中及以下申請專利範圍中時，字眼「包含」與「包括」意欲指明陳述的特徵、整數、成分或步驟之存在，但該等字眼並不排除一或更多個其他的特徵、整數、成分、步驟、動作或基團的存在或加入。
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Claims (20)

  1. 一種在一圖案化基板上形成一介電質層的方法，該方法包含：將該圖案化基板轉移至一基板處理區域中；使一矽前驅物流入該基板處理區域；使一電漿蒸氣/氣體流入該基板處理區域，其中該電漿蒸氣/氣體流入和該矽前驅物流入同時發生；在該基板處理區域中藉由施加每平方公分的圖案化基板面積小於或約0.3W的一電漿功率來擊發一電漿；以及在該圖案化基板上形成該介電質層，其中該介電質層包含矽和氮或碳中之一者，並且在沉積過程中該介電質層為流動性的，其中該矽前驅物流入包含在形成該流動性介電質層的整個過程中供應該矽前驅物之一連續流至該基板處理區域，以及其中擊發一電漿包含在形成該流動性介電質層的整個過程中連續地施加一電漿功率。
  2. 如請求項1所述之方法，其中在形成該流動性介電質層時該圖案化基板之一溫度係小於200℃。
  3. 如請求項1所述之方法，其中該電漿蒸氣/氣體包含氨氣、氫氣(H2)、氬氣、氮氣(N2)、一烴或氧氣(O2)中之一者。
  4. 如請求項1所述之方法，其中該矽前驅物為三矽烷胺、二矽烷胺或單矽烷胺中之一者。
  5. 如請求項1所述之方法，其中該矽前驅物包含一更高級矽烷，該更高級矽烷含有三個或更多的矽原子。
  6. 如請求項1所述之方法，其中該矽前驅物包含一鹵素取代的矽烷。
  7. 如請求項6所述之方法，其中該鹵素取代的矽烷為六氯二矽烷。
  8. 如請求項1所述之方法，其中該介電質層為碳化矽、氮化矽或SiCN中之一者。
  9. 如請求項1所述之方法，其中該介電質層由矽、氮及氫所組成。
  10. 如請求項1所述之方法，其中該介電質層由矽、碳、氮及氫所組成。
  11. 如請求項1所述之方法，其中擊發該電漿包含藉由電容式或感應式工具施加射頻(RF)至該基板處理區域。
  12. 如請求項1所述之方法，其中擊發該電漿包含閃耀紫外(UV)光進入該基板處理區域。
  13. 如請求項1所述之方法，其中擊發該電漿包含施加0.025W至0.30W(每平方公分的圖案化基板面積)的電漿功率至該基板處理區域。
  14. 如請求項1所述之方法，其中擊發該電漿包含在形成該介電質層的整個過程中連續地施加電漿功率。
  15. 如請求項1所述之方法，其中該基板為圖案化的並具有一溝槽，該溝槽具有一約50nm或更小的寬度。
  16. 如請求項1所述之方法，進一步包含在形成該介電質層的操作之後固化該介電質層。
  17. 如請求項16所述之方法，其中固化之後該介電質層在垂直於該圖案化基板之主要平面的一厚度為約25nm或更薄。
  18. 如請求項1所述之方法，其中該矽前驅物、該電漿蒸氣/氣體以及該介電質層每個皆為無碳的。
  19. 如請求項1所述之方法，其中在形成該流動性介電質層時該圖案化基板之一溫度係小於100℃。
  20. 如請求項1所述之方法，其中在形成該流動性介電質層時該圖案化基板之一溫度係小於30℃。
TW102131319A 2012-09-11 2013-08-30 低成本流動性介電質薄膜 TW201417179A (zh)

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US8889566B2 (en) 2014-11-18
US20140073144A1 (en) 2014-03-13
WO2014042833A1 (en) 2014-03-20
JP2015534265A (ja) 2015-11-26

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