TWI366876B - A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide - Google Patents

A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide

Info

Publication number
TWI366876B
TWI366876B TW096119169A TW96119169A TWI366876B TW I366876 B TWI366876 B TW I366876B TW 096119169 A TW096119169 A TW 096119169A TW 96119169 A TW96119169 A TW 96119169A TW I366876 B TWI366876 B TW I366876B
Authority
TW
Taiwan
Prior art keywords
silicon dioxide
film quality
cycle process
cure cycle
enhance film
Prior art date
Application number
TW096119169A
Other languages
Chinese (zh)
Other versions
TW200807558A (en
Inventor
Xiaolin Chen
Srinivas D Nemani
Shankar Venkatraman
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/753,968 external-priority patent/US7902080B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200807558A publication Critical patent/TW200807558A/en
Application granted granted Critical
Publication of TWI366876B publication Critical patent/TWI366876B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
TW096119169A 2006-05-30 2007-05-29 A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide TWI366876B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80348106P 2006-05-30 2006-05-30
US11/753,968 US7902080B2 (en) 2006-05-30 2007-05-25 Deposition-plasma cure cycle process to enhance film quality of silicon dioxide

Publications (2)

Publication Number Publication Date
TW200807558A TW200807558A (en) 2008-02-01
TWI366876B true TWI366876B (en) 2012-06-21

Family

ID=38779413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096119169A TWI366876B (en) 2006-05-30 2007-05-29 A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide

Country Status (6)

Country Link
EP (1) EP2036120A4 (en)
JP (1) JP5225268B2 (en)
KR (1) KR101115750B1 (en)
CN (1) CN101454877B (en)
TW (1) TWI366876B (en)
WO (1) WO2007140377A2 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7947561B2 (en) * 2008-03-14 2011-05-24 Applied Materials, Inc. Methods for oxidation of a semiconductor device
US8329587B2 (en) * 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
CN102054734B (en) * 2009-11-10 2013-01-30 中芯国际集成电路制造(上海)有限公司 Method for improving filling capacity of wafer channel
US8528224B2 (en) * 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
US8512809B2 (en) 2010-03-31 2013-08-20 General Electric Company Method of processing multilayer film
US8318584B2 (en) * 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
TWI616923B (en) * 2012-12-31 2018-03-01 Fei公司 Method of filling a hole using charged particle beam-induced deposition, method of filling a high aspect ratio hole, method of filling a high aspect ratio hole, and a charged particle beam system
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN103972146B (en) * 2013-01-30 2016-12-28 中芯国际集成电路制造(上海)有限公司 The forming method of groove isolation construction
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
KR102161241B1 (en) * 2013-03-15 2020-09-29 어플라이드 머티어리얼스, 인코포레이티드 Apparatus and methods for pulsed photo-excited deposition and etch
JP5943888B2 (en) * 2013-08-28 2016-07-05 株式会社東芝 Manufacturing method of semiconductor device
US20150340274A1 (en) * 2014-05-23 2015-11-26 GlobalFoundries, Inc. Methods for producing integrated circuits with an insultating layer
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
KR20160061129A (en) * 2014-11-21 2016-05-31 주식회사 원익아이피에스 Method of fabricating stacked film
CN107430991A (en) * 2015-02-23 2017-12-01 应用材料公司 For forming the circulation continuous processing of high-quality thin film
US11028477B2 (en) * 2015-10-23 2021-06-08 Applied Materials, Inc. Bottom-up gap-fill by surface poisoning treatment
JP6938491B2 (en) * 2015-11-13 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． Semiconductor device processing methods and semiconductor device processing systems and equipment
US10115601B2 (en) 2016-02-03 2018-10-30 Tokyo Electron Limited Selective film formation for raised and recessed features using deposition and etching processes
US9768034B1 (en) * 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
CN106783535A (en) * 2016-11-28 2017-05-31 武汉新芯集成电路制造有限公司 The method and semiconductor structure of a kind of improvement PETEOS film defects
CN110612596B (en) * 2017-04-13 2023-08-15 应用材料公司 Method and apparatus for depositing low dielectric constant films
CN109166787B (en) * 2018-08-26 2019-06-28 合肥安德科铭半导体科技有限公司 A kind of flowable chemical vapor deposition method of silicon oxide film
US20200090980A1 (en) * 2018-09-13 2020-03-19 Nanya Technology Corporation Method for preparing semiconductor structures
KR20220056249A (en) 2018-10-19 2022-05-04 램 리써치 코포레이션 Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
KR102224128B1 (en) 2019-08-05 2021-03-09 한양대학교 산학협력단 Deposition method of carbon thin-film
JP7227122B2 (en) 2019-12-27 2023-02-21 株式会社Kokusai Electric Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program
JP7072012B2 (en) 2020-02-27 2022-05-19 株式会社Kokusai Electric Substrate processing method, semiconductor device manufacturing method, substrate processing device, and program

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616505B2 (en) * 1987-08-18 1994-03-02 株式会社半導体エネルギ−研究所 Insulation film formation method
JP2980340B2 (en) * 1990-04-28 1999-11-22 科学技術振興事業団 CVD method
US5393708A (en) 1992-10-08 1995-02-28 Industrial Technology Research Institute Inter-metal-dielectric planarization process
JP2684942B2 (en) * 1992-11-30 1997-12-03 日本電気株式会社 Chemical vapor deposition method, chemical vapor deposition apparatus, and method for manufacturing multilayer wiring
US5576071A (en) * 1994-11-08 1996-11-19 Micron Technology, Inc. Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH0982696A (en) * 1995-09-18 1997-03-28 Toshiba Corp Manufacture of semiconductor device and semiconductor manufacturing equipment
JP3522917B2 (en) * 1995-10-03 2004-04-26 株式会社東芝 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
JPH11145131A (en) * 1997-03-18 1999-05-28 Toshiba Corp Manufacture of semiconductor device, semiconductor manufacturing apparatus, and semiconductor device
US6413583B1 (en) * 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6197658B1 (en) 1998-10-30 2001-03-06 Taiwan Semiconductor Manufacturing Company Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
JP4698813B2 (en) * 2000-10-19 2011-06-08 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
US6531413B2 (en) * 2000-12-05 2003-03-11 United Microelectronics Corp. Method for depositing an undoped silicate glass layer
US6770521B2 (en) * 2001-11-30 2004-08-03 Texas Instruments Incorporated Method of making multiple work function gates by implanting metals with metallic alloying additives
US7723242B2 (en) * 2004-03-15 2010-05-25 Sharp Laboratories Of America, Inc. Enhanced thin-film oxidation process
US7205248B2 (en) * 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US6867086B1 (en) * 2003-03-13 2005-03-15 Novellus Systems, Inc. Multi-step deposition and etch back gap fill process
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US6958112B2 (en) * 2003-05-27 2005-10-25 Applied Materials, Inc. Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
KR100538882B1 (en) * 2003-06-30 2005-12-23 주식회사 하이닉스반도체 Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
WO2007140377A9 (en) 2008-10-16
WO2007140377A3 (en) 2008-08-28
KR101115750B1 (en) 2012-03-07
CN101454877B (en) 2012-07-04
JP2009539266A (en) 2009-11-12
CN101454877A (en) 2009-06-10
JP5225268B2 (en) 2013-07-03
TW200807558A (en) 2008-02-01
KR20090019865A (en) 2009-02-25
EP2036120A2 (en) 2009-03-18
EP2036120A4 (en) 2012-02-08
WO2007140377A2 (en) 2007-12-06

Similar Documents

Publication Publication Date Title
TWI366876B (en) A novel deposition-plasma cure cycle process to enhance film quality of silicon dioxide
EP2014683A4 (en) Process for production of water-absorbable resin
EP2264526A4 (en) Photosensitive transparent resin composition, process for production of color filters, and color filters
EP2147766A4 (en) Process and apparatus for production of colorless transparent resin film
GB2449159B (en) Production method of pigment-dispersing resin
EP2345688A4 (en) Process for producing resin composition
EP2053076A4 (en) Process for production of water-absorbable resin
EP2144092A4 (en) Method for production of plastic lens
EP2070684A4 (en) Process for the production of polylactic acid film
EP2267143A4 (en) Process for production of amide compounds
EP2247431A4 (en) Process of making mold for optical film
PL2285769T3 (en) A process for the preparation of enantiomerically pure amines
ZA201009139B (en) A process for the production of no-carrier added 99mo
PL394029A1 (en) Module of structural packing for a mass transfer column and the related process
EP2292579A4 (en) Process for production of halogenated -fluoroethers
EP2132138A4 (en) A process for the production of cyanides
EP2088136A4 (en) Process for production of hydroxyadamantaneamine
EP2055708A4 (en) Novel epoxy compound and process for production thereof
EP2351712A4 (en) Process for production of synthetic quartz glass
EP2261219A4 (en) Process for production of epoxy compound
EP1908818A4 (en) Process for production of liquid koji
PL1986839T3 (en) Process for production of thin-walled plastics mouldings
EP1867627A4 (en) Process for production of tertiary amines
EP2170813A4 (en) A novel process for the preparation of pregabalin
EP1990336A4 (en) Process for production of 5-alkoxy-4-hydroxymethylpyrazole compound