CN103972146B - The forming method of groove isolation construction - Google Patents
The forming method of groove isolation construction Download PDFInfo
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- CN103972146B CN103972146B CN201310037646.2A CN201310037646A CN103972146B CN 103972146 B CN103972146 B CN 103972146B CN 201310037646 A CN201310037646 A CN 201310037646A CN 103972146 B CN103972146 B CN 103972146B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
A kind of forming method of groove isolation construction, including: providing substrate, substrate is formed groove, substrate is positioned at reaction chamber；The first silicon oxide film layer is formed in sidewall and the bottom of groove；Silicon-containing gas, the first silicon oxide film layer surface adsorption silicon-containing gas it is passed through in reaction chamber；Being passed through oxygen-containing gas in reaction chamber, oxygen-containing gas reacts generation the second silicon oxide film layer with the silicon-containing gas of described first silicon oxide film layer surface adsorption；Or, in reaction chamber, it is passed through silicon-containing gas, makes oxygen-containing gas excite formation first to react generation the second silicon oxide film layer containing oxygen plasma, the first silicon-containing gas containing oxygen plasma with the first silicon oxide film layer surface adsorption；Repeat to be passed through silicon-containing gas, oxygen-containing gas, the step of generation the second silicon oxide film layer, until groove is completely filled.The method can realize gapless high aspect ratio trench quite and fill, and packed layer consistency is high, and avoids the generation of tensile stress.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly relate to the forming method of groove isolation construction.
Background technology
Along with the development of semiconductor technology, circuits on substrates element becomes more and more intensive.In order to prevent element
Between interaction, generally between transistor active area formed groove, the most in the trench filled media
Material reaches electric isolation to form groove isolation construction (S TI).But it is as element in integrated circuit
Continuing to increase of density, the width of these grooves is also corresponding constantly to be reduced, and therefore adds the deep wide of groove
Ratio.Depth-to-width ratio is defined as the degree of depth of groove and the ratio of width.The representative value of high-aspect-ratio is more than 3:1, high
The groove of depth-to-width ratio is difficult to deposit and forms film in uniform thickness, and can produce pinch off and hole.
In prior art, high-density plasma (HDP, high density plasma) technique is because of its ditch
Groove filling capacity is strong, deposition film quality good and the shortest and be widely applied.But use etc. from
Plasma process is filled with, and can damage the laying in groove；And enter one along with depth-to-width ratio
Step increases, and the method has been difficult to meet gapless and has filled requirement.More knowledge about HDP technique,
Refer to the american documentation literature of Publication No. US5872058A disclosed in 16 days February in 1999.
In prior art, high depth ratio is also used to fill out ditch technique (HARP, High Aspect Ratio Process)
The gapless realizing high aspect ratio trench quite is filled.Frequently with tetraethyl orthosilicate (TEOS) and O3As instead
Answer agent, deposit at 680-730 DEG C, the SiO of generation2There is extraordinary conformality, can well fill out
Fill the depth-to-width ratio groove more than 6:1.But the SiO that the method generates2Layer consistency is little, causes absorbing steam,
And tension force is the biggest.
Summary of the invention
The problem that the present invention solves is the SiO when filling the groove of high-aspect-ratio2Layer easily forms hole, and
And the SiO formed2Consistency is little, tension force is big for layer.
For solving the problems referred to above, the present invention provides the forming method of a kind of groove isolation construction, including:
Thering is provided substrate, described substrate is formed groove, described substrate is positioned at reaction chamber；At described ditch
First silicon oxide film layer is formed on the sidewall of groove and bottom；Silicon-containing gas it is passed through in reaction chamber, described
Oxide film layer surface adsorption silicon-containing gas；In described reaction chamber, it is passed through oxygen-containing gas, described contains
It is thin that carrier of oxygen and the silicon-containing gas of described first silicon oxide film layer surface adsorption react generation the second silicon oxide
Film layer；Or, in reaction chamber, it is passed through silicon-containing gas, makes described oxygen-containing gas excite formation first oxygen-containing
Plasma, the described first siliceous containing oxygen plasma and described first silicon oxide film layer surface adsorption
Gas reaction generates the second silicon oxide film layer；Silicon-containing gas, oxygen-containing gas, generation it is passed through described in repetition
The step of the second silicon oxide film layer, until described groove is completely filled.
Alternatively, TEOS and O is used3Or O2Reaction forms described first silicon oxide film layer.
Alternatively, after forming described first silicon oxide film layer, before being passed through silicon-containing gas, described instead
Intracavity is answered to be passed through second containing oxygen plasma to remove the impurity on described first silicon oxide film layer surface.
In the present invention, all silicon oxide film layers in addition to the first silicon oxide film layer are all referred to as second
The oxidation that silicon oxide film layer, i.e. silicon-containing gas generate with oxygen-containing gas or the first oxygen-containing plasma reaction
Silicon membrane layer is referred to as the second silicon oxide film layer.
Alternatively, after forming described second silicon oxide film layer at least one times, logical in described reaction chamber
Enter second containing oxygen plasma to remove the impurity on described second silicon oxide film layer surface.The most often form one
After described second silicon oxide film layer of layer, second can be passed through in described reaction chamber containing oxygen plasma to go
Impurity except this layer of described second silicon oxide film layer surface.
Alternatively, after forming described first silicon oxide film layer, before being passed through silicon-containing gas, described instead
Answer intracavity to be passed through inert, plasma and bombard described first silicon oxide film layer.
Alternatively, after forming described second silicon oxide film layer at least one times, logical in described reaction chamber
Enter inert, plasma and bombard described second silicon oxide film layer.The most often form one layer of described second silicon oxide
After thin layer, can being passed through inert, plasma in described reaction chamber, to bombard this layer of described second silicon oxide thin
Film layer.
Alternatively, described silicon-containing gas is SiH4Or TEOS.
Alternatively, described oxygen-containing gas is O2Or O3。
Alternatively, described second is O containing oxygen plasma2Plasma.
Alternatively, exciting described oxygen-containing gas is first to be 100-2000W containing the power of oxygen plasma.
Alternatively, the flow velocity of described oxygen-containing gas is 100-3000sccm.
Alternatively, the pressure of described oxygen-containing gas is 0.1-100mtorr.
Alternatively, described second it is mixed into diluent gas containing in oxygen plasma.
Alternatively, described diluent gas is He or Ar.
Alternatively, described inert, plasma is Ar or He plasma.
Alternatively, the power forming described inert, plasma is 100-2000W.
Alternatively, the flow velocity of described inert, plasma is 100-3000sccm.
Alternatively, the pressure of described inert, plasma is 0.1-100mtorr.
Alternatively, before forming described first silicon oxide film layer, in described groove, form oxide layer
Liner.
Compared with prior art, the invention have the advantages that
First silicon oxide film layer absorption carrier as silicon-containing gas is formed in groove.Afterwards, instead
Answering intracavity to be passed through silicon-containing gas, described silicon-containing gas is than the SiO using sedimentation deposit2Granule be easier to into
Enter groove, and silicon-containing gas is than the SiO of deposit2Granule is easier to absorption at the first silicon oxide film layer table
Face, and uniform adsorption is on the first silicon oxide film layer surface.Silicon-containing gas and the oxygen-containing gas in reaction chamber
Or first oxygen-containing plasma reaction generate the second silicon oxide film that consistency is high and thickness evenness is good
Layer, it is to avoid form salient point on trenched side-wall, and then avoid the hole caused due to salient point.Secondly,
Silicon-containing gas is easier to enter the space in the first silicon oxide film layer, the second silicon oxide film layer of formation
It is filled with the space in the first silicon oxide film layer, improves the consistency of the first silicon oxide film layer.With
Reason, after often forming one layer of second silicon oxide film layer, the silicon-containing gas being passed through ratio uses sedimentation deposit
SiO2Granule is easier to enter groove, and silicon-containing gas is than the SiO of deposit2Granule is easier to absorption at this
Layer the second silicon oxide film layer surface, and uniform adsorption is on this layer the second silicon oxide film layer surface, is passed through
Silicon-containing gas also can enter in the space of this second silicon oxide film layer.In silicon-containing gas and reaction chamber
Oxygen-containing gas or the first oxygen-containing plasma reaction generate that consistency is high and thickness evenness is good another second
Silicon oxide film layer, it is to avoid form salient point on trenched side-wall, and then avoid and cause due to salient point
Hole.Another second silicon oxide film layer formed can also fill the sky of last layer the second silicon oxide film layer
Gap, makes groove obtain fine and close filling.And silicon-containing gas and oxygen-containing gas or first are containing oxygen plasma
The second silicon oxide film layer that reaction generates directly is attached to the first silicon oxide film layer surface or upper one second
Silicon oxide film layer surface, the second silicon oxide film layer thickness of generation is the most relatively thin, can avoid in reaction
The second silicon oxide film layer generated produces stress, is conducive to filling simultaneously.
In a particular embodiment, second is used to remove first, second silicon oxide film layer containing oxygen plasma
The impurity such as the Organic substance on surface, carbon, improve first, second silicon oxide film layer surface to silicon-containing gas
Physical absorption performance.Inert, plasma can also be passed through and bombard described first, second silicon oxide film
Layer, on the one hand by first, second silicon oxide film layer described in ise, increases the opening of groove
Degree, the beneficially entrance of silicon-containing gas adsorbing on first, second silicon oxide film layer surface；The opposing party
Face, inert gas plasma and first, second silicon oxide film layer surface collision, make first, second
Silicon oxide film layer densification, and make the stress in first, second silicon oxide film layer be released.Make
Oxygen-containing gas excite be first containing oxygen plasma time, improve reaction rate, and then improve groove
Charging efficiency.TEOS is as silicon-containing gas in employing, and uses O3Can further improve as oxygen-containing gas
Reaction rate, improves the charging efficiency of groove.
Accompanying drawing explanation
Fig. 1 is the forming method schematic flow sheet of the groove isolation construction of the specific embodiment of the invention;
Fig. 2 to Fig. 5 is that the cross-section structure making groove isolation construction method of the specific embodiment of the invention shows
It is intended to.
Detailed description of the invention
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The detailed description of the invention of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but this
Bright can implement to use other to be different from other modes described here, those skilled in the art are permissible
In the case of intension of the present invention, doing similar popularization, therefore the present invention not by following public specifically
The restriction of embodiment.
Next present invention combines schematic diagram and is described in detail, when describing the embodiment of the present invention in detail, for ease of
Illustrate, represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram
Simply example, it should not limit the scope of protection of the invention at this.
With reference to Fig. 2, and combine with reference to Fig. 1, perform step S1, it is provided that substrate 101, on described substrate 101
Being formed with groove 104, described substrate 101 is positioned at reaction chamber (not shown).
Substrate 101 can be conventional partly the leading such as silicon substrate, silicon-Germanium substrate, silicon-on-insulator (SOI) substrate
Body substrate.In a particular embodiment, substrate 101 is the most also sequentially formed with isolating oxide layer 102
With nitride layer 103.Described isolating oxide layer 102 is for protecting active area in the mistake removing nitride layer 103
From chemical spot in journey, its material can be SiO2.Described nitride layer 103 can fill groove
During protect active area, it is also possible to as barrier material in subsequent planarization technique, its material is permissible
For silicon nitride.
The method forming groove 104 can be dry etching or wet etching.In a particular embodiment, groove
After 104 are formed, one layer of cushion oxide layer (not shown) can be grown on the sidewall of groove 104, be used for
Improve substrate 101 and the interfacial characteristics filled between silicon oxide.
With reference to Fig. 3, and combine with reference to Fig. 1, perform step S2, in sidewall and the bottom shape of described groove 104
Become the first silicon oxide film layer 105.In a particular embodiment, TEOS and O is used3As source of the gas, use
Chemical vapour deposition technique forms the first silicon oxide film layer 105, and sedimentation time is 1-50s.Owing to not using
Plasma, will not cause damage to described cushion oxide layer liner.The absorption of substrate 101 material itself is siliceous
The ability of gas is more weak, so needing first to be formed in groove 104 first silicon oxide film in the way of deposition
Layer 105 is as the carrier adsorbing the follow-up silicon-containing gas being passed through.TEOS has the highest mobility, with
TEOS has extraordinary gradient coating performance as raw material, the silicon oxide generated after reaction, the oxygen of formation
SiClx thin film layer thickness is uniform.
With TEOS and O3As a example by reaction, reaction is unavoidable not exclusively, and the TEOS having neither part nor lot in reaction can adsorb
First silicon oxide film layer 105 surface, or due to reaction insufficient, after reaction the carbon in TEOS not with
Gas form overflows and sticks to the first silicon oxide film layer 105 surface.These impurity such as Organic substance, carbon glues
It is attached to the first silicon oxide film layer 105 surface and reduces the activity on the first silicon oxide film layer 105 surface, fall
Low first silicon oxide film layer 105 surface absorbability to silicon-containing gas.In a particular embodiment, shape
After becoming described first silicon oxide film layer 105, can be passed through in described reaction chamber second containing oxygen plasma with
Remove the impurity such as the Organic substance of described first silicon oxide film layer 105 surface adsorption, carbon, expose described
The scission of link on oxide film layer 105 surface, to improve described first silicon oxide film layer 105 surface to containing
The absorption property of silicon gas.Described second containing oxygen plasma can be O2Plasma, described oxygen-containing etc.
The flow velocity of gas ions is 100-3000sccm, and pressure is 0.1-100mtorr, and by O2100-2000W's
Excite as O under radio-frequency bias2Plasma.O2Plasma with stick to the first silicon oxide film layer 105 table
The impurity reaction rates such as the Organic substance in face, carbon quickly, produce too high temperature and may result in these impurity
Diffuse into the first silicon oxide film layer 105 internal, in order to control reaction rate, can be described oxygen-containing etc.
Being mixed into diluent gas in gas ions, diluent gas can also take the gas that reaction generates out of reaction chamber.Institute
Stating diluent gas can be He or Ar.
In a particular embodiment, it is also possible to after forming described first silicon oxide film layer 105, be passed through inertia
Plasma 1-50s.Described inert, plasma is accelerated in reaction chamber and is obtained kinetic energy, and directional migration
To the first silicon oxide film layer 105 surface, and bombard the first silicon oxide film layer 105, after bombardment, make
Material in oxide film layer 105 is sputtered, and this process is referred to as ise.Due to the material being etched
Be about in vertical direction 3-4 times of material surface etch rate on 45 ° of directions, so only at described groove
First silicon oxide film layer 105 at 104 tops is etched, in 45 ° of inclinations after etching, and the of other positions
Oxide film layer 105 is not damaged.Described ise increases the opening degree of groove 104, favorably
In the entrance of silicon-containing gas and adsorb on described first silicon oxide film layer 105 surface, and only etching is described
First silicon oxide film layer 105 at groove 104 top, and first silicon oxide film layer 105 at other positions is not
Can be damaged.When described inert gas plasma and described first silicon oxide film layer 105 surface collision,
Its effect, just as metal is carried out blasting treatment, can not only make described first silicon oxide film layer 105 fine and close
Change, moreover it is possible to discharge stress present in described first silicon oxide film layer 105, and due to inertia plasma
Volume property is stable, will not react with the first silicon oxide film layer 105.Described inert, plasma is permissible
For Ar or He plasma, Ar or He plasma is formed under the radio-frequency bias of 100-2000W, Ar or
The flow velocity of He plasma is 100-3000sccm, and pressure is 0.1-100mtorr.
Above-mentioned be passed through second containing oxygen plasma to remove described first silicon oxide film layer 105 surface adsorption
Organic substance, the impurity technique such as carbon, can individually use with being passed through inert, plasma technique, it is also possible to
All use, and two techniques are without strict precedence.
With reference to Fig. 1, perform step S3, in reaction chamber, be passed through silicon-containing gas, described first silicon oxide film
Layer 105 surface adsorption silicon-containing gas.
In a particular embodiment, silicon-containing gas can be SiH4Or TEOS.With reference to Fig. 4, described silicon-containing gas
Than the SiO using sedimentation deposit2Granule is easier to enter groove 104, and silicon-containing gas is than deposit
SiO2Granule is easier to adsorb on the first silicon oxide film layer 105 surface, and easier uniform adsorption is first
Silicon oxide film layer 105 surface.Silicon-containing gas and the oxygen-containing gas in reaction chamber or first are containing oxygen plasma
Reaction generates the second silicon oxide film layer 106 that consistency is high and thickness evenness is good, it is to avoid groove 104
Form salient point on sidewall, and then avoid the hole caused due to salient point, gapless ditch can be obtained
Groove is filled.Secondly, silicon-containing gas is easier to enter the space in the first silicon oxide film layer 105, formation
Second silicon oxide film layer is filled with the space in the first silicon oxide film layer, improves the first silicon oxide thin
The consistency of film layer 105.And what silicon-containing gas and oxygen-containing gas or the first oxygen-containing plasma reaction generated
Second silicon oxide film layer 106 is directly attached to the first silicon oxide film layer 105 surface, the second oxygen of generation
SiClx thin film layer thickness 106 is the least, can avoid in the second silicon oxide film layer 106 that reaction generates
Produce stress.
First silicon oxide film layer 105 adsorbs silicon-containing gas and has the upper limit, if the time mistake of logical silicon-containing gas
Long, first silicon oxide film layer 105 adsorbance to silicon containing gas can not be increased, cause wastage of material, and
And first silicon oxide film layer 105 adsorbance of silicon containing gas is not the bigger the better, adsorb too much silicon containing gas
Silicon containing gas may be caused incomplete with oxygen-containing gas or the first reaction containing oxygen plasma, the second of generation
The impurity content of silicon oxide film layer 106 is more, affects the carrying out of subsequent technique, the second silicon oxide of formation
Blocked up being also possible to of thin layer 106 produces bigger stress.The time of logical silicon-containing gas is too short, then trench fill
Inefficient.Generally, the time of logical silicon-containing gas is 1-50s.
With reference to Fig. 4, and combine with reference to Fig. 1, perform step S4, in described reaction chamber, be passed through oxygen-containing gas,
Described oxygen-containing gas reacts generation with the silicon-containing gas of described first silicon oxide film layer 105 surface adsorption
Silica membrane layer 106；Or, in described reaction chamber, it is passed through oxygen-containing gas, makes described oxygen-containing gas
Equal excitation forms first and contains oxygen plasma, and described first is thin with described first silicon oxide containing oxygen plasma
The silicon-containing gas reaction of film layer 105 surface adsorption generates the second silicon oxide film layer 106.
In a particular embodiment, described oxygen-containing gas can be O2Or O3, the flow velocity of described oxygen-containing gas is
100-3000sccm, pressure is 0.1-100mtorr, it is also possible to excite under the radio-frequency bias of 100-2000W
For plasma.The second oxygen that silicon-containing gas generates with oxygen-containing gas or the first reaction containing oxygen plasma
SiClx thin layer 106 is directly attached to the first silicon oxide film layer 105 surface, and the second silicon oxide of generation is thin
Film layer 106 thickness is the least, can avoid producing in the second silicon oxide film layer 106 that reaction generates answering
Power.Use O2Or O3Plasma reacts, and can improve reaction rate, and then improve filling out of groove
Fill efficiency.
There is no obvious wiring between first silicon oxide film layer 105 and the second silicon oxide film layer 106, but be
It is convenient to describe, and both is separated in Fig. 4, adds wiring between the two to distinguish.
With reference to Fig. 5, and combine with reference to Fig. 1, perform step S5, described in repetition, be passed through silicon-containing gas, oxygen-containing
Gas, generate the step of the second silicon oxide film layer 106, until described groove 104 is completely filled.
After often forming one layer of second silicon oxide film layer, the silicon containing gas being passed through is known from experience entrance this layer second and is aoxidized
In the space of silicon membrane layer, described silicon-containing gas and the oxygen-containing gas in reaction chamber or first are containing oxygen plasma
The space of this layer the second silicon oxide film layer can be filled out by another second silicon oxide film layer that precursor reactant is formed
Filling, groove can obtain fine and close filling.And silicon-containing gas and oxygen-containing gas or first are containing oxygen plasma
Reaction generate the second silicon oxide film layer 106 be directly attached to one second silicon oxide film layer surface,
The the second silicon oxide film layer thickness generated is the least, and the second silicon oxide generated in reaction can be avoided thin
Film layer produces stress.
In the present invention, all silicon oxide film layers in addition to the first silicon oxide film layer are all referred to as second
The oxidation that silicon oxide film layer, i.e. silicon-containing gas generate with oxygen-containing gas or the first oxygen-containing plasma reaction
Silicon membrane layer is referred to as the second silicon oxide film layer.
After often forming one layer of described second silicon oxide film layer, second can be passed through in described reaction chamber oxygen-containing
Plasma is to remove the impurity on this layer of described second silicon oxide film layer surface.Often form one layer described the
After silica membrane layer, also can be passed through inert, plasma in described reaction chamber and bombard this layer described
Silica membrane layer.But it is desirable that described after the most often forming one layer of described second silicon oxide film layer
Second it is passed through containing oxygen plasma to remove the miscellaneous of this layer of described second silicon oxide film layer surface in reaction chamber
Matter or inert, plasma can be passed through in described reaction chamber bombard this layer of described second silicon oxide film layer.
Above-mentioned it is passed through second containing oxygen plasma to remove the having of described second silicon oxide film layer surface adsorption
The impurity techniques such as machine thing, carbon, can individually use with being passed through inert, plasma technique, it is also possible to all adopt
With, and two techniques are without strict precedence.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, appoints
What those skilled in the art without departing from the spirit and scope of the present invention, may be by the disclosure above
Technical solution of the present invention is made possible variation and amendment by method and technology contents, therefore, every does not takes off
From the content of technical solution of the present invention, it is any that above example is made by the technical spirit of the foundation present invention
Simple modification, equivalent variations and modification, belong to the protection domain of technical solution of the present invention.
Claims (19)
1. the forming method of a groove isolation construction, it is characterised in that including:
Thering is provided substrate, described substrate is formed groove, described substrate is positioned at reaction chamber；
The first silicon oxide film layer is formed in sidewall and the bottom of described groove；
Silicon-containing gas, described first silicon oxide film layer surface adsorption silicon-containing gas it is passed through in reaction chamber；
After being passed through described silicon-containing gas in described reaction chamber, in described reaction chamber, it is passed through oxygen-containing gas,
Described oxygen-containing gas reacts generation the second oxygen with the silicon-containing gas of described first silicon oxide film layer surface adsorption
SiClx thin layer；Or, in described reaction chamber, it is passed through oxygen-containing gas, makes described oxygen-containing gas excite shape
Becoming first to contain oxygen plasma, described first containing oxygen plasma and described first silicon oxide film layer surface
The silicon-containing gas reaction of absorption generates the second silicon oxide film layer；
Silicon-containing gas, oxygen-containing gas, the step of generation the second silicon oxide film layer it is passed through, directly described in repetition
It is completely filled to described groove.
2. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that use TEOS
With O3Or O2Reaction forms described first silicon oxide film layer.
3. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that form described the
After oxide film layer, before being passed through silicon-containing gas, in described reaction chamber, it is passed through second oxygen-containing etc.
Gas ions is to remove the impurity on described first silicon oxide film layer surface.
4. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that at least one times
After forming described second silicon oxide film layer, be passed through in described reaction chamber second containing oxygen plasma with
Remove the impurity on described second silicon oxide film layer surface.
5. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that form described the
After oxide film layer, before being passed through silicon-containing gas, in described reaction chamber, it is passed through inertia plasma
Body bombards described first silicon oxide film layer.
6. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that at least one times
After forming described second silicon oxide film layer, in described reaction chamber, it is passed through inert, plasma bombards institute
State the second silicon oxide film layer.
7. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that described silicon containing gas
Body is SiH4Or TEOS.
8. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that described oxygenous
Body is O2Or O3。
9. the forming method of the groove isolation construction as described in claim 3 or 4, it is characterised in that described
Two containing oxygen plasma be O2Plasma.
10. the forming method of groove isolation construction as claimed in claim 1, it is characterised in that contain described in exciting
Carrier of oxygen is first to be 100-2000W containing the power of oxygen plasma.
The forming method of 11. groove isolation constructions as claimed in claim 1, it is characterised in that described oxygenous
The flow velocity of body is 100-3000sccm.
The forming method of 12. groove isolation constructions as claimed in claim 1, it is characterised in that described oxygenous
The pressure of body is 0.1-100mtorr.
The forming method of 13. groove isolation constructions as described in claim 3 or 4, it is characterised in that described
Two are mixed into diluent gas containing in oxygen plasma.
The forming method of 14. groove isolation constructions as claimed in claim 13, it is characterised in that described carrier gas
Body is He or Ar.
The forming method of 15. groove isolation constructions as described in claim 5 or 6, it is characterised in that described lazy
Property plasma is Ar or He plasma.
The forming method of 16. groove isolation constructions as described in claim 5 or 6, it is characterised in that form institute
The power stating inert, plasma is 100-2000W.
The forming method of 17. groove isolation constructions as described in claim 5 or 6, it is characterised in that described lazy
The flow velocity of property plasma is 100-3000sccm.
The forming method of 18. groove isolation constructions as described in claim 5 or 6, it is characterised in that described lazy
The pressure of property plasma is 0.1-100mtorr.
The forming method of 19. groove isolation constructions as claimed in claim 1, it is characterised in that described being formed
Before first silicon oxide film layer, form oxide layer liner at described trenched side-wall and bottom.
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| CN101452873A (en) * | 2007-12-06 | 2009-06-10 | 上海华虹Nec电子有限公司 | Shallow trench isolation process |
| CN102054688A (en) * | 2009-11-06 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | Method for forming void-free medium filling on graphical substrate |
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