JP6101467B2 - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
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- JP6101467B2 JP6101467B2 JP2012222474A JP2012222474A JP6101467B2 JP 6101467 B2 JP6101467 B2 JP 6101467B2 JP 2012222474 A JP2012222474 A JP 2012222474A JP 2012222474 A JP2012222474 A JP 2012222474A JP 6101467 B2 JP6101467 B2 JP 6101467B2
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- 238000000034 method Methods 0.000 title claims description 95
- 239000000758 substrate Substances 0.000 claims description 91
- 230000005291 magnetic effect Effects 0.000 claims description 44
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 claims description 42
- 238000005121 nitriding Methods 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000007789 gas Substances 0.000 description 134
- 230000008569 process Effects 0.000 description 44
- 239000002243 precursor Substances 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 29
- 238000001179 sorption measurement Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 238000009413 insulation Methods 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002885 antiferromagnetic material Substances 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- -1 H 2 Chemical compound 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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Description
図1は、一実施形態に係る成膜方法により表面に絶縁膜が成膜されたMRAM素子100の断面図を示している。図1に示すMRAM素子100は、基板B上に配置されており、下層から順に下部電極層101、ピン止め層102、第2磁性層103、トンネル障壁層104、第1磁性層105、上部電極層106、及びエッチングマスク107が積層されている。また、MRAM素子100の第1磁性層105、上部電極層106、及びエッチングマスク107の側壁には、SiNを含む絶縁膜108が設けられている。
上述のように、第1実施形態に係る成膜方法では、絶縁膜108の成膜工程において、処理容器12内にTSAにH2を添加したガスを供給することで、絶縁膜108のカバレッジを向上している。しかし、H2の添加量を増加させていくとカバレッジは向上していくものの、絶縁膜108の絶縁特性は劣化していくという問題がある。
本実施例では、図5に示す成膜装置10により、TSAに添加されるH2の流量を変化させて絶縁膜を成膜し、H2の流量とカバレッジ特性との関係について評価した。被処理基板Wとしては、図11に示すような、アスペクト比(開口幅/深さ)が0.7のトレンチ構造Tが形成された評価用シリコンウェハを用いた。絶縁膜108は、以下に示す処理条件で成膜された。図11に示すように、被処理基板WのトレンチTの外部の絶縁膜108の膜厚をTtとし、トレンチTの側壁の膜厚をTsとしたときに、膜厚Tsと膜厚Ttとの比Ts/Ttを%表記したものをカバレッジとして算出した。膜厚Tsは、トレンチTの深さ方向の中間位置において形成された絶縁膜108の膜厚とした。
マイクロ波発生器28の電力:4000W
圧力:0.95Torr
処理温度:300℃
ガスの流量
Arガス:2850sccm
N2ガス:2.8sccm
H2ガス:35sccm、70sccm、87sccm
TSAガス:2.2sccm
マイクロ波発生器28の電力:4000W
圧力:0.95Torr
処理温度:300℃
ガスの流量
Arガス:2850sccm
N2ガス:3.6sccm
H2ガス:35sccm、70sccm、105sccm
TSAガス:2.2sccm
本実施例では、図5に示す成膜装置10により、成膜圧力を変化させて絶縁膜108を成膜し、成膜圧力とカバレッジ特性との関係について評価した。本実施例では、実施例1で使用されたものと同様の評価用シリコンウェハを被処理基板Wとして用いた。絶縁膜108は、以下に示す処理条件で形成した。
マイクロ波発生器28の電力:4000W
処理温度:200℃
ガスの流量
Arガス:2000sccm
N2ガス:8sccm
H2ガス:100sccm
TSAガス:4.5sccm
本実施例では、図5に示す成膜装置10により、絶縁膜108の成膜後に窒化処理を施した場合の絶縁膜(以下、「絶縁膜1」と称す。)108のカバレッジ特性及び絶縁特性について評価した。絶縁膜1の処理条件を以下に示す。本実施例では、実施例1で使用されたものと同様の評価用シリコンウェハを被処理基板Wとして用いた。
[成膜処理の処理条件]
マイクロ波発生器28の電力:4000W
処理温度:300℃
圧力:0.95Torr
ガスの流量
Arガス:2850sccm
N2ガス:2.8sccm
H2ガス:70sccm
TSAガス:2.2sccm
処理時間:130sec
[窒化処理の処理条件]
マイクロ波発生器28の電力:4000W
処理温度:300℃
圧力:0.05Torr
ガスの流量
Arガス:600sccm
N2ガス:2.8sccm
H2ガス:70sccm
TSAガス:0sccm
処理時間:60sec
[成膜処理の処理条件]
マイクロ波発生器28の電力:4000W
処理温度:200℃
圧力:0.15Torr
ガスの流量
Arガス:600sccm
N2ガス:9.3sccm
H2ガス:70sccm
SiH4ガス:15sccm
処理時間:78sec
[絶縁膜3]
[成膜処理の処理条件]
マイクロ波発生器28の電力:4000W
処理温度:300℃
圧力:0.95Torr
ガスの流量
Arガス:2850sccm
N2ガス:3.6sccm
H2ガス:35sccm
TSAガス:2.2sccm
処理時間:268sec
[絶縁膜4]
[成膜処理の処理条件]
マイクロ波発生器28の電力:4000W
処理温度:300℃
圧力:0.95Torr
ガスの流量
Arガス:2850sccm
N2ガス:3.6sccm
H2ガス:70sccm
TSAガス:2.2sccm
処理時間:268sec
本実施例では、図5に示す成膜装置10により、絶縁膜108の成膜後の窒化処理時間を変化させた場合の絶縁膜のカバレッジ特性及び絶縁特性について評価した。本実施例では、実施例1で使用されたものと同様の評価用シリコンウェハを被処理基板Wとして用いた。本実施例の処理条件は、窒化処理の処理時間を除き、上記実施例3の絶縁膜1の処理条件と同じとした。
Claims (8)
- プラズマが生成される処理空間を画成する処理容器と、前記処理空間内にガスを供給するガス供給部と、前記処理容器内にマイクロ波を供給してプラズマを生成するプラズマ生成部と、備える成膜装置を用いて、被処理基板に対して絶縁膜を成膜する成膜方法であって、
前記処理容器に、トリシリルアミンガスとH2ガスとが混合されたガスを供給し、プラズマを発生させて前記被処理基板に対してSiNを含む絶縁膜を成膜する成膜工程を含み、
前記トリシリルアミンガスに対する前記H2ガスの流量比は16以上39以下である、
成膜方法。 - 前記成膜工程の後に、N2を含むガスを供給し、プラズマを発生させて前記絶縁膜を窒化処理する窒化工程を更に含む、請求項1に記載の成膜方法。
- 前記成膜工程及び前記窒化工程を複数回繰り返して、前記絶縁膜を成膜する、請求項2に記載の成膜方法。
- 前記窒化工程は、前記成膜工程において成膜された前記絶縁膜の中に含まれるSiHをSiNに置き換える、請求項2又は3に記載の成膜方法。
- 前記成膜工程および前記窒化工程において、前記被処理基板を200℃以上350℃以下の範囲で温度制御する、請求項2〜4の何れか一項に記載の成膜方法。
- 前記成膜工程において、前記処理容器内の圧力が400mTorr以上になるように調整される、請求項1〜5の何れか一項に記載の成膜方法。
- 前記被処理基板が、第1磁性層及び第2磁性層がトンネル障壁層を挟んで積層された積層構造を含む、請求項1〜6の何れか一項に記載の成膜方法。
- プラズマが生成される処理空間を画成する処理容器と、
前記処理空間内にガスを供給するガス供給部と、
前記処理容器内にマイクロ波を供給してプラズマを生成するプラズマ生成部と、
前記ガス供給部及び前記プラズマ生成部を制御する制御部と、を備え、
前記制御部は、前記処理容器に、トリシリルアミンガスと、前記トリシリルアミンガスに対する流量比を16以上39以下としたH2ガスとが混合されたガスを供給し、プラズマを発生させて被処理基板に対してSiN膜を成膜する、成膜装置。
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US14/041,004 US9378942B2 (en) | 2012-10-04 | 2013-09-30 | Deposition method and deposition apparatus |
TW102135782A TWI634600B (zh) | 2012-10-04 | 2013-10-03 | Film forming method and film forming device |
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US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
JP6586328B2 (ja) | 2015-09-04 | 2019-10-02 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP6690496B2 (ja) * | 2016-03-17 | 2020-04-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
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