JPH1174389A - スプリット・ゲート・メモリ装置 - Google Patents

スプリット・ゲート・メモリ装置

Info

Publication number
JPH1174389A
JPH1174389A JP18564798A JP18564798A JPH1174389A JP H1174389 A JPH1174389 A JP H1174389A JP 18564798 A JP18564798 A JP 18564798A JP 18564798 A JP18564798 A JP 18564798A JP H1174389 A JPH1174389 A JP H1174389A
Authority
JP
Japan
Prior art keywords
gate
channel region
region
source
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18564798A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174389A5 (enExample
Inventor
Chan Kuo-Tan
クオータン・チャン
Ko-Min Chang
コーミン・チャン
Chan Wai-Min
ウェイ−ミン・チャン
Forbes Keith
キース・フォーブス
R Roberts Douglas
ダグラス・アール・ロバーツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPH1174389A publication Critical patent/JPH1174389A/ja
Publication of JPH1174389A5 publication Critical patent/JPH1174389A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP18564798A 1997-06-16 1998-06-15 スプリット・ゲート・メモリ装置 Pending JPH1174389A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US876576 1986-06-20
US08/876,576 US5969383A (en) 1997-06-16 1997-06-16 Split-gate memory device and method for accessing the same

Publications (2)

Publication Number Publication Date
JPH1174389A true JPH1174389A (ja) 1999-03-16
JPH1174389A5 JPH1174389A5 (enExample) 2005-10-20

Family

ID=25368058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18564798A Pending JPH1174389A (ja) 1997-06-16 1998-06-15 スプリット・ゲート・メモリ装置

Country Status (2)

Country Link
US (1) US5969383A (enExample)
JP (1) JPH1174389A (enExample)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102466A (ja) * 1999-08-05 2001-04-13 Halo Lsi Design & Device Technol Inc 不揮発性メモリセルおよびそのプログラム方法ならびに不揮発性メモリアレイ
JP2001168219A (ja) * 1999-09-29 2001-06-22 Sony Corp 不揮発性半導体記憶装置およびその駆動方法
US6335554B1 (en) 1999-03-08 2002-01-01 Kabushiki Kaisha Toshiba Semiconductor Memory
US6429073B1 (en) 1999-06-23 2002-08-06 Seiko Epson Corporation Methods for manufacturing semiconductor devices having a non-volatile memory transistor
JP2002231829A (ja) * 2001-01-22 2002-08-16 Halo Lsi Design & Device Technol Inc 不揮発性半導体メモリおよびその製造方法
JP2003022684A (ja) * 2001-07-10 2003-01-24 Fujitsu Ltd 不揮発性半導体記憶装置
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
JP2003508921A (ja) * 1999-08-27 2003-03-04 マクロニックス・アメリカ・インコーポレーテッド 割型誘電体フローティングゲートを利用する容易に収縮可能な新規な不揮発性半導体記憶装置セル及びその製造方法
US6537869B1 (en) 1999-09-17 2003-03-25 Seiko Epson Corporation Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
US6717204B1 (en) 1999-06-23 2004-04-06 Seiko Epson Corporation Semiconductor devices having a non-volatile memory transistor
US6756629B1 (en) 1999-08-20 2004-06-29 Seiko Epson Corporation Semiconductor devices including a multi-well and split-gate non-volatile memory transistor structure
JPWO2002071494A1 (ja) * 2001-03-01 2004-07-02 ヘイロ エルエスアイ デザインアンドディヴァイス テクノロジー インコーポレイテッド キャリアトラップサイトへのホットホール注入による不揮発性メモリの消去方法
JP2004186452A (ja) * 2002-12-04 2004-07-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP2004228571A (ja) * 2003-01-22 2004-08-12 Samsung Electronics Co Ltd Ｓｏｎｏｓ型不揮発性メモリ及びその製造方法
US6865128B2 (en) 2002-12-16 2005-03-08 Seiko Epson Corporation Non-volatile memory device
US6898120B2 (en) 2002-12-10 2005-05-24 Seiko Epson Corporation Nonvolatile semiconductor memory device
US6911691B2 (en) 2001-06-01 2005-06-28 Sony Corporation Nonvolatile semiconductor memory device
US6934191B2 (en) 2003-02-28 2005-08-23 Seiko Epson Corporation Nonvolatile semiconductor memory device
JP2006135341A (ja) * 2005-12-01 2006-05-25 Renesas Technology Corp 半導体装置
US7053442B2 (en) 2003-02-28 2006-05-30 Seiko Epson Corporation Nonvolatile semiconductor memory device
US7061043B2 (en) 2003-02-28 2006-06-13 Seiko Epson Corporation Non-volatile semiconductor memory device and method of manufacturing the same
US7139193B2 (en) 2003-02-21 2006-11-21 Seiko Epson Corporation Non-volatile memory with two adjacent memory cells sharing same word line
JP2007281092A (ja) * 2006-04-04 2007-10-25 Renesas Technology Corp 半導体装置およびその製造方法
JP2010062594A (ja) * 2009-12-18 2010-03-18 Renesas Technology Corp 不揮発性半導体記憶装置
JP2011014920A (ja) * 2010-08-30 2011-01-20 Renesas Electronics Corp 不揮発性半導体記憶装置
JP2011171755A (ja) * 2011-04-15 2011-09-01 Renesas Electronics Corp 半導体装置
JP2013123072A (ja) * 2013-01-28 2013-06-20 Renesas Electronics Corp 不揮発性半導体記憶装置

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2776830B1 (fr) * 1998-03-26 2001-11-23 Sgs Thomson Microelectronics Cellule memoire electriquement programmable
US5879992A (en) * 1998-07-15 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating step poly to improve program speed in split gate flash
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6368919B2 (en) 1999-01-19 2002-04-09 Micron Technology, Inc. Method and composite for decreasing charge leakage
US6259133B1 (en) * 1999-02-11 2001-07-10 Advanced Micro Devices, Inc. Method for forming an integrated circuit memory cell and product thereof
US6522587B1 (en) 1999-06-23 2003-02-18 Seiko Epson Corporation Non-volatile semiconductor memory devices
US6388293B1 (en) 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array
JP2001148434A (ja) * 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
DE10036911C2 (de) * 2000-07-28 2002-06-06 Infineon Technologies Ag Verfahren zur Herstellung einer Multi-Bit-Speicherzelle
JP3496932B2 (ja) 2001-01-30 2004-02-16 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置
JP4325972B2 (ja) 2001-01-30 2009-09-02 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置の製造方法
TW476144B (en) * 2001-02-02 2002-02-11 Macronix Int Co Ltd Non-volatile memory
JP3930256B2 (ja) * 2001-02-07 2007-06-13 スパンション エルエルシー 半導体装置及びその製造方法
US6759707B2 (en) * 2001-03-08 2004-07-06 Micron Technology, Inc. 2F2 memory device system
JP3780865B2 (ja) 2001-04-13 2006-05-31 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3640175B2 (ja) 2001-04-13 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP4715024B2 (ja) 2001-05-08 2011-07-06 セイコーエプソン株式会社 不揮発性半導体記憶装置のプログラム方法
JP2002334588A (ja) 2001-05-11 2002-11-22 Seiko Epson Corp 不揮発性半導体記憶装置のプログラム方法
JP3682462B2 (ja) * 2001-05-31 2005-08-10 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3716914B2 (ja) 2001-05-31 2005-11-16 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3606231B2 (ja) * 2001-05-31 2005-01-05 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3640176B2 (ja) * 2001-06-04 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3640177B2 (ja) * 2001-06-04 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
US6580120B2 (en) * 2001-06-07 2003-06-17 Interuniversitair Microelektronica Centrum (Imec Vzw) Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
DE10130765A1 (de) * 2001-06-26 2003-01-09 Infineon Technologies Ag Transistor-Anordnung, Verfahren zum Betreiben einer Transistor-Anordnung als Datenspeicher und Verfahren zum Herstellen einer Transistor-Anordnung
JP3873679B2 (ja) 2001-07-23 2007-01-24 セイコーエプソン株式会社 半導体容量装置、昇圧回路および不揮発性半導体記憶装置
JP3640179B2 (ja) * 2001-07-23 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3622697B2 (ja) 2001-07-23 2005-02-23 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3640180B2 (ja) * 2001-07-23 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3594001B2 (ja) 2001-07-23 2004-11-24 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3849759B2 (ja) * 2001-07-31 2006-11-22 セイコーエプソン株式会社 半導体装置
JP3812645B2 (ja) 2001-07-31 2006-08-23 セイコーエプソン株式会社 半導体装置
US7087954B2 (en) 2001-08-30 2006-08-08 Micron Technology, Inc. In service programmable logic arrays with low tunnel barrier interpoly insulators
US6963103B2 (en) 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7476925B2 (en) 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
JP3659205B2 (ja) * 2001-08-30 2005-06-15 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその駆動方法
US7132711B2 (en) 2001-08-30 2006-11-07 Micron Technology, Inc. Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US7068544B2 (en) 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
JP3452056B2 (ja) 2001-09-14 2003-09-29 セイコーエプソン株式会社 半導体装置の製造方法
US6518124B1 (en) 2001-09-18 2003-02-11 Seiko Epson Corporation Method of fabricating semiconductor device
US6413821B1 (en) 2001-09-18 2002-07-02 Seiko Epson Corporation Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit
JP2003091999A (ja) * 2001-09-19 2003-03-28 Seiko Epson Corp 不揮発性半導体記憶装置
JP2003091998A (ja) * 2001-09-19 2003-03-28 Seiko Epson Corp 不揮発性半導体記憶装置
JP2003091997A (ja) * 2001-09-19 2003-03-28 Seiko Epson Corp 不揮発性半導体記憶装置
JP2003091996A (ja) 2001-09-19 2003-03-28 Seiko Epson Corp 不揮発性半導体記憶装置
JP3674564B2 (ja) * 2001-09-25 2005-07-20 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3671889B2 (ja) 2001-09-25 2005-07-13 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3671890B2 (ja) * 2001-09-25 2005-07-13 セイコーエプソン株式会社 半導体装置およびその製造方法
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6897522B2 (en) * 2001-10-31 2005-05-24 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
JP2003208794A (ja) * 2002-01-10 2003-07-25 Seiko Epson Corp 不揮発性半導体記憶装置
JP3956709B2 (ja) 2002-01-23 2007-08-08 セイコーエプソン株式会社 半導体装置の製造方法
US6642441B2 (en) * 2002-01-23 2003-11-04 Kws Kleinwanzlebener Saatzucgt Ag Inbred corn line KW4773
JP3726753B2 (ja) * 2002-01-23 2005-12-14 セイコーエプソン株式会社 不揮発性半導体記憶装置の昇圧回路
JP2003218244A (ja) * 2002-01-24 2003-07-31 Seiko Epson Corp 半導体装置の製造方法
JP3531641B2 (ja) 2002-01-24 2004-05-31 セイコーエプソン株式会社 半導体装置の製造方法
JP3702851B2 (ja) 2002-01-24 2005-10-05 セイコーエプソン株式会社 不揮発性半導体装置の昇圧回路
JP3772756B2 (ja) 2002-02-13 2006-05-10 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3738838B2 (ja) * 2002-02-13 2006-01-25 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2003243616A (ja) * 2002-02-20 2003-08-29 Seiko Epson Corp 半導体装置の製造方法
JP2003243618A (ja) 2002-02-20 2003-08-29 Seiko Epson Corp 半導体装置の製造方法
JP3726760B2 (ja) 2002-02-20 2005-12-14 セイコーエプソン株式会社 半導体装置の製造方法
JP2003243617A (ja) * 2002-02-20 2003-08-29 Seiko Epson Corp 半導体装置の製造方法
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
JP2003258133A (ja) * 2002-03-05 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法および半導体装置の製造方法
JP2003258132A (ja) * 2002-03-05 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
JP3640186B2 (ja) * 2002-03-06 2005-04-20 セイコーエプソン株式会社 半導体装置の製造方法
JP3900979B2 (ja) * 2002-03-14 2007-04-04 セイコーエプソン株式会社 不揮発性レジスタおよび半導体装置
JP3843869B2 (ja) * 2002-03-15 2006-11-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3821026B2 (ja) 2002-03-18 2006-09-13 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3840994B2 (ja) * 2002-03-18 2006-11-01 セイコーエプソン株式会社 不揮発性半導体記憶装置
US20060007772A1 (en) * 2002-03-19 2006-01-12 O2Ic, Inc. Non-volatile memory device
US6954377B2 (en) 2002-03-19 2005-10-11 O2Ic, Inc. Non-volatile differential dynamic random access memory
US6965145B2 (en) * 2002-03-19 2005-11-15 O2Ic, Inc. Non-volatile memory device
JP3821032B2 (ja) 2002-03-20 2006-09-13 セイコーエプソン株式会社 ファイルストレージ型不揮発性半導体記憶装置
JP2003282744A (ja) * 2002-03-22 2003-10-03 Seiko Epson Corp 不揮発性記憶装置
JP4647175B2 (ja) 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7232717B1 (en) 2002-05-28 2007-06-19 O2Ic, Inc. Method of manufacturing non-volatile DRAM
JP3815381B2 (ja) * 2002-06-06 2006-08-30 セイコーエプソン株式会社 不揮発性半導体記憶装置およびその駆動方法
JP3867624B2 (ja) 2002-06-06 2007-01-10 セイコーエプソン株式会社 不揮発性半導体記憶装置およびその駆動方法
JP3622741B2 (ja) * 2002-07-12 2005-02-23 セイコーエプソン株式会社 半導体装置の製造方法
DE10238784A1 (de) * 2002-08-23 2004-03-11 Infineon Technologies Ag Nichtflüchtiges Halbleiterspeicherelement sowie zugehöriges Herstellungs- und Ansteuerverfahren
JP3975349B2 (ja) 2002-09-02 2007-09-12 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3975350B2 (ja) * 2002-09-11 2007-09-12 セイコーエプソン株式会社 半導体装置の製造方法
JP2004103153A (ja) * 2002-09-11 2004-04-02 Seiko Epson Corp 不揮発性半導体記憶装置の電圧発生回路
JP3972196B2 (ja) * 2002-09-18 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
JP3743514B2 (ja) * 2002-10-24 2006-02-08 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3664159B2 (ja) * 2002-10-29 2005-06-22 セイコーエプソン株式会社 半導体装置およびその製造方法
US6828618B2 (en) * 2002-10-30 2004-12-07 Freescale Semiconductor, Inc. Split-gate thin-film storage NVM cell
JP3664160B2 (ja) * 2002-10-30 2005-06-22 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3664161B2 (ja) * 2002-10-30 2005-06-22 セイコーエプソン株式会社 半導体装置およびその製造方法
JP4601287B2 (ja) * 2002-12-26 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4489359B2 (ja) * 2003-01-31 2010-06-23 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR100505108B1 (ko) * 2003-02-12 2005-07-29 삼성전자주식회사 소노스 기억셀 및 그 제조방법
JP2004303918A (ja) * 2003-03-31 2004-10-28 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2004349308A (ja) * 2003-05-20 2004-12-09 Sharp Corp 半導体記憶装置
US6816414B1 (en) 2003-07-31 2004-11-09 Freescale Semiconductor, Inc. Nonvolatile memory and method of making same
JP2005064295A (ja) * 2003-08-14 2005-03-10 Oki Electric Ind Co Ltd 半導体不揮発性メモリ、この半導体不揮発性メモリへの情報の記録方法、及びこの半導体不揮発性メモリからの情報の読み出し方法
JP3767588B2 (ja) * 2003-08-29 2006-04-19 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその制御方法
JP4196191B2 (ja) * 2003-09-09 2008-12-17 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその制御方法
KR100585107B1 (ko) * 2003-11-13 2006-05-30 삼성전자주식회사 자기 정렬을 이용한 로컬 소노스 소자 제조 방법
US6939767B2 (en) * 2003-11-19 2005-09-06 Freescale Semiconductor, Inc. Multi-bit non-volatile integrated circuit memory and method therefor
SE0303106D0 (sv) * 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
US7235848B2 (en) * 2003-12-09 2007-06-26 Applied Intellectual Properties Co., Ltd. Nonvolatile memory with spacer trapping structure
US20050156229A1 (en) * 2003-12-16 2005-07-21 Yeap Geoffrey C. Integrated circuit device and method therefor
JP4335659B2 (ja) * 2003-12-19 2009-09-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7186612B2 (en) * 2004-01-28 2007-03-06 O2Ic, Inc. Non-volatile DRAM and a method of making thereof
US20050170586A1 (en) * 2004-01-29 2005-08-04 O2Ic, Inc., (A California Corporation) Method of manufacturing non-volatile DRAM
JP4521597B2 (ja) * 2004-02-10 2010-08-11 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
JP4546117B2 (ja) * 2004-03-10 2010-09-15 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4601316B2 (ja) * 2004-03-31 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
TWI239641B (en) * 2004-04-02 2005-09-11 Powerchip Semiconductor Corp Non-volatile memory structure and manufacturing method thereof
US20050219913A1 (en) * 2004-04-06 2005-10-06 O2Ic, Inc. Non-volatile memory array
US20050259467A1 (en) * 2004-05-18 2005-11-24 Micron Technology, Inc. Split gate flash memory cell with ballistic injection
US7196935B2 (en) * 2004-05-18 2007-03-27 Micron Technolnology, Inc. Ballistic injection NROM flash memory
CN100595923C (zh) * 2004-05-27 2010-03-24 株式会社瑞萨科技 集成半导体非易失性存储器的控制方法
JP4664707B2 (ja) 2004-05-27 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4422556B2 (ja) * 2004-06-10 2010-02-24 株式会社ルネサステクノロジ 不揮発性半導体記憶装置およびその書き込み方法
JP5007017B2 (ja) * 2004-06-30 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20060011967A1 (en) * 2004-07-15 2006-01-19 Skymedi Corporation Split gate memory structure and manufacturing method thereof
JP2006041354A (ja) * 2004-07-29 2006-02-09 Renesas Technology Corp 半導体装置及びその製造方法
US7160775B2 (en) * 2004-08-06 2007-01-09 Freescale Semiconductor, Inc. Method of discharging a semiconductor device
JP2006066564A (ja) * 2004-08-26 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
US7518179B2 (en) 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US20060193174A1 (en) * 2005-02-25 2006-08-31 O2Ic Non-volatile and static random access memory cells sharing the same bitlines
US20070242514A1 (en) * 2005-03-10 2007-10-18 O2Ic, Inc. NAND-structured nonvolatile memory cell
JP2006252670A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 不揮発性メモリの駆動方法およびこれに用いられる不揮発性メモリ
JP5116987B2 (ja) * 2005-05-23 2013-01-09 ルネサスエレクトロニクス株式会社 集積半導体不揮発性記憶装置
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7226840B2 (en) * 2005-07-25 2007-06-05 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7205608B2 (en) * 2005-07-25 2007-04-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US7211487B2 (en) * 2005-07-25 2007-05-01 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7211858B2 (en) * 2005-07-25 2007-05-01 Freescale Semiconductor, Inc. Split gate storage device including a horizontal first gate and a vertical second gate in a trench
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7112490B1 (en) 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7567458B2 (en) * 2005-09-26 2009-07-28 Silicon Storage Technology, Inc. Flash memory array having control/decode circuitry for disabling top gates of defective memory cells
US7456465B2 (en) * 2005-09-30 2008-11-25 Freescale Semiconductor, Inc. Split gate memory cell and method therefor
US7491600B2 (en) * 2005-11-04 2009-02-17 Freescale Semiconductor, Inc. Nanocrystal bitcell process integration for high density application
US7622349B2 (en) * 2005-12-14 2009-11-24 Freescale Semiconductor, Inc. Floating gate non-volatile memory and method thereof
JP2007194511A (ja) * 2006-01-23 2007-08-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
US7544980B2 (en) * 2006-01-27 2009-06-09 Freescale Semiconductor, Inc. Split gate memory cell in a FinFET
US8742486B2 (en) 2006-02-04 2014-06-03 Spansion, Llc Flash memory cells having trenched storage elements
US9159568B2 (en) * 2006-02-04 2015-10-13 Cypress Semiconductor Corporation Method for fabricating memory cells having split charge storage nodes
TWI293198B (en) * 2006-03-10 2008-02-01 Promos Technologies Inc Method of fabricating semiconductor device
JP4646837B2 (ja) 2006-03-13 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4799229B2 (ja) * 2006-03-14 2011-10-26 Ｏｋｉセミコンダクタ株式会社 半導体記憶装置の製造方法
US7700439B2 (en) * 2006-03-15 2010-04-20 Freescale Semiconductor, Inc. Silicided nonvolatile memory and method of making same
US7341914B2 (en) * 2006-03-15 2008-03-11 Freescale Semiconductor, Inc. Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7847335B2 (en) * 2006-04-11 2010-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory device having a generally L-shaped cross-section sidewall SONOS
JP4928825B2 (ja) * 2006-05-10 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7524719B2 (en) 2006-08-31 2009-04-28 Freescale Semiconductor, Inc. Method of making self-aligned split gate memory cell
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
JP4965948B2 (ja) * 2006-09-21 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US8410543B2 (en) 2007-02-01 2013-04-02 Renesas Electronics Corporation Semiconductor storage device and manufacturing method thereof
US7416945B1 (en) * 2007-02-19 2008-08-26 Freescale Semiconductor, Inc. Method for forming a split gate memory device
US7838363B2 (en) * 2007-10-31 2010-11-23 Freescale Semiconductor, Inc. Method of forming a split gate non-volatile memory cell
JP2009224425A (ja) * 2008-03-14 2009-10-01 Renesas Technology Corp 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置
JP2009302269A (ja) * 2008-06-13 2009-12-24 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2010147077A (ja) * 2008-12-16 2010-07-01 Renesas Electronics Corp 半導体装置
US20110001179A1 (en) * 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
JP5300773B2 (ja) * 2010-03-29 2013-09-25 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US20140167141A1 (en) 2012-12-14 2014-06-19 Spansion Llc Charge Trapping Split Gate Embedded Flash Memory and Associated Methods
US8836006B2 (en) 2012-12-14 2014-09-16 Spansion Llc Integrated circuits with non-volatile memory and methods for manufacture
US10014380B2 (en) 2012-12-14 2018-07-03 Cypress Semiconductor Corporation Memory first process flow and device
US8816438B2 (en) 2012-12-14 2014-08-26 Spansion Llc Process charging protection for split gate charge trapping flash
US9209197B2 (en) 2012-12-14 2015-12-08 Cypress Semiconductor Corporation Memory gate landing pad made from dummy features
US20140167220A1 (en) 2012-12-14 2014-06-19 Spansion Llc Three dimensional capacitor
US9966477B2 (en) 2012-12-14 2018-05-08 Cypress Semiconductor Corporation Charge trapping split gate device and method of fabricating same
US9368606B2 (en) 2012-12-14 2016-06-14 Cypress Semiconductor Corporation Memory first process flow and device
US20140167142A1 (en) 2012-12-14 2014-06-19 Spansion Llc Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells
US8822289B2 (en) 2012-12-14 2014-09-02 Spansion Llc High voltage gate formation
US20140210012A1 (en) 2013-01-31 2014-07-31 Spansion Llc Manufacturing of FET Devices Having Lightly Doped Drain and Source Regions
US9331183B2 (en) 2013-06-03 2016-05-03 United Microelectronics Corp. Semiconductor device and fabrication method thereof
US8895397B1 (en) * 2013-10-15 2014-11-25 Globalfoundries Singapore Pte. Ltd. Methods for forming thin film storage memory cells
US20150200279A1 (en) * 2014-01-12 2015-07-16 United Microelectronics Corp. Method of manufacturing memory cell
WO2016028943A1 (en) * 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
US9406812B1 (en) * 2015-01-12 2016-08-02 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US9472645B1 (en) * 2015-06-08 2016-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Dual control gate spacer structure for embedded flash memory

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226059A (ja) * 1986-10-27 1988-09-20 Toshiba Corp 不揮発性半導体記憶装置
JPH06181319A (ja) * 1992-12-15 1994-06-28 Rohm Co Ltd 半導体装置
JPH06188430A (ja) * 1992-12-22 1994-07-08 Rohm Co Ltd 不揮発性記憶素子およびその製造方法
JPH06268232A (ja) * 1993-03-10 1994-09-22 Rohm Co Ltd 半導体装置
JPH07193151A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 不揮発性半導体記憶装置及びその記憶方法
JPH0855922A (ja) * 1994-07-06 1996-02-27 Hyundai Electron Ind Co Ltd フラッシュメモリセルおよびその製造方法
JPH08236647A (ja) * 1995-02-23 1996-09-13 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408115A (en) * 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device
GB2292008A (en) * 1994-07-28 1996-02-07 Hyundai Electronics Ind A split gate type flash eeprom cell
US5780891A (en) * 1994-12-05 1998-07-14 Micron Technology, Inc. Nonvolatile floating gate memory with improved interploy dielectric
JP3133667B2 (ja) * 1995-02-23 2001-02-13 三洋電機株式会社 スプリットゲート型トランジスタ、スプリットゲート型トランジスタの製造方法、不揮発性半導体メモリ
JP2950212B2 (ja) * 1995-08-25 1999-09-20 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
JPH09134973A (ja) * 1995-11-07 1997-05-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5703388A (en) * 1996-07-19 1997-12-30 Mosel Vitelic Inc. Double-poly monos flash EEPROM cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226059A (ja) * 1986-10-27 1988-09-20 Toshiba Corp 不揮発性半導体記憶装置
JPH06181319A (ja) * 1992-12-15 1994-06-28 Rohm Co Ltd 半導体装置
JPH06188430A (ja) * 1992-12-22 1994-07-08 Rohm Co Ltd 不揮発性記憶素子およびその製造方法
JPH06268232A (ja) * 1993-03-10 1994-09-22 Rohm Co Ltd 半導体装置
JPH07193151A (ja) * 1993-12-27 1995-07-28 Toshiba Corp 不揮発性半導体記憶装置及びその記憶方法
JPH0855922A (ja) * 1994-07-06 1996-02-27 Hyundai Electron Ind Co Ltd フラッシュメモリセルおよびその製造方法
JPH08236647A (ja) * 1995-02-23 1996-09-13 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置及びその製造方法

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335554B1 (en) 1999-03-08 2002-01-01 Kabushiki Kaisha Toshiba Semiconductor Memory
US6632714B2 (en) 1999-03-08 2003-10-14 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor memory
US6429073B1 (en) 1999-06-23 2002-08-06 Seiko Epson Corporation Methods for manufacturing semiconductor devices having a non-volatile memory transistor
US6717204B1 (en) 1999-06-23 2004-04-06 Seiko Epson Corporation Semiconductor devices having a non-volatile memory transistor
JP2001102466A (ja) * 1999-08-05 2001-04-13 Halo Lsi Design & Device Technol Inc 不揮発性メモリセルおよびそのプログラム方法ならびに不揮発性メモリアレイ
US6756629B1 (en) 1999-08-20 2004-06-29 Seiko Epson Corporation Semiconductor devices including a multi-well and split-gate non-volatile memory transistor structure
JP4969748B2 (ja) * 1999-08-27 2012-07-04 マクロニックス・アメリカ・インコーポレーテッド 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法
JP2003508921A (ja) * 1999-08-27 2003-03-04 マクロニックス・アメリカ・インコーポレーテッド 割型誘電体フローティングゲートを利用する容易に収縮可能な新規な不揮発性半導体記憶装置セル及びその製造方法
US6537869B1 (en) 1999-09-17 2003-03-25 Seiko Epson Corporation Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
JP2001168219A (ja) * 1999-09-29 2001-06-22 Sony Corp 不揮発性半導体記憶装置およびその駆動方法
JP2002231829A (ja) * 2001-01-22 2002-08-16 Halo Lsi Design & Device Technol Inc 不揮発性半導体メモリおよびその製造方法
JPWO2002071494A1 (ja) * 2001-03-01 2004-07-02 ヘイロ エルエスアイ デザインアンドディヴァイス テクノロジー インコーポレイテッド キャリアトラップサイトへのホットホール注入による不揮発性メモリの消去方法
US6911691B2 (en) 2001-06-01 2005-06-28 Sony Corporation Nonvolatile semiconductor memory device
US7453118B2 (en) 2001-06-01 2008-11-18 Sony Corporation Non-volatile semiconductor memory device
JP2003022684A (ja) * 2001-07-10 2003-01-24 Fujitsu Ltd 不揮発性半導体記憶装置
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
US9012968B2 (en) 2002-12-04 2015-04-21 Renesas Electronics Corporation Semiconductor non-volatile memory device
US9412750B2 (en) 2002-12-04 2016-08-09 Renesas Electronics Corporation Fabrication method and structure of semiconductor non-volatile memory device
US9299715B2 (en) 2002-12-04 2016-03-29 Renesas Electronics Corporation Fabrication method and structure of semiconductor non-volatile memory device
US7671404B2 (en) 2002-12-04 2010-03-02 Renesas Technology Corp. Fabrication method and structure of semiconductor non-volatile memory device
US8084810B2 (en) 2002-12-04 2011-12-27 Renesas Electronics Corporation Fabrication method and structure of semiconductor non-volatile memory device
JP2004186452A (ja) * 2002-12-04 2004-07-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
US6898120B2 (en) 2002-12-10 2005-05-24 Seiko Epson Corporation Nonvolatile semiconductor memory device
US6865128B2 (en) 2002-12-16 2005-03-08 Seiko Epson Corporation Non-volatile memory device
JP2004228571A (ja) * 2003-01-22 2004-08-12 Samsung Electronics Co Ltd Ｓｏｎｏｓ型不揮発性メモリ及びその製造方法
US7139193B2 (en) 2003-02-21 2006-11-21 Seiko Epson Corporation Non-volatile memory with two adjacent memory cells sharing same word line
US6934191B2 (en) 2003-02-28 2005-08-23 Seiko Epson Corporation Nonvolatile semiconductor memory device
US7061043B2 (en) 2003-02-28 2006-06-13 Seiko Epson Corporation Non-volatile semiconductor memory device and method of manufacturing the same
US7053441B2 (en) 2003-02-28 2006-05-30 Seiko Epson Corporation Nonvolatile semiconductor memory device
US7053442B2 (en) 2003-02-28 2006-05-30 Seiko Epson Corporation Nonvolatile semiconductor memory device
JP2006135341A (ja) * 2005-12-01 2006-05-25 Renesas Technology Corp 半導体装置
JP2007281092A (ja) * 2006-04-04 2007-10-25 Renesas Technology Corp 半導体装置およびその製造方法
US8269266B2 (en) 2006-04-04 2012-09-18 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
US8497547B2 (en) 2006-04-04 2013-07-30 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
JP2010062594A (ja) * 2009-12-18 2010-03-18 Renesas Technology Corp 不揮発性半導体記憶装置
JP2011014920A (ja) * 2010-08-30 2011-01-20 Renesas Electronics Corp 不揮発性半導体記憶装置
JP2011171755A (ja) * 2011-04-15 2011-09-01 Renesas Electronics Corp 半導体装置
JP2013123072A (ja) * 2013-01-28 2013-06-20 Renesas Electronics Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US5969383A (en) 1999-10-19

Similar Documents

Publication Publication Date Title
JPH1174389A (ja) スプリット・ゲート・メモリ装置
CN1677675B (zh) 非易失性半导体存储器件
US5838041A (en) Nonvolatile semiconductor memory device having memory cell transistor provided with offset region acting as a charge carrier injecting region
US6252799B1 (en) Device with embedded flash and EEPROM memories
JP4262314B2 (ja) Ｎａｎｄ型不揮発性メモリ素子、その製造方法及び駆動方法
US7157773B2 (en) Nonvolatile semiconductor memory device
US4924437A (en) Erasable programmable memory including buried diffusion source/drain lines and erase lines
KR100440095B1 (ko) 비휘발성 반도체 기억장치, 그의 제조 방법 및 동작 방법
US6721205B2 (en) Nonvolatile semiconductor memory device and methods for operating and producing the same
US6026017A (en) Compact nonvolatile memory
US4912676A (en) Erasable programmable memory
JP4463334B2 (ja) 単一層ゲート不揮発性メモリ素子
US7247907B2 (en) Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
US20080258205A1 (en) Non-volatile semiconductor memory device
WO2005013281A2 (en) Nonvolatile memory and method of making same
US20040251488A1 (en) Nonvolatile semiconductor memory device and method of reading out same
JP3060680B2 (ja) 不揮発性半導体記憶装置
US6324099B1 (en) 2-bit/cell type nonvolatile semiconductor memory
JP2002368141A (ja) 不揮発性半導体メモリ装置
JPH0997849A (ja) 半導体装置
US9287284B2 (en) Semiconductor field-effect transistor, memory cell and memory device
JP3630491B2 (ja) 半導体装置
KR100706071B1 (ko) 단일비트 비휘발성 메모리셀 및 그것의 프로그래밍 및삭제방법
KR20030042422A (ko) 다중비트를 저장하는 기억소자를 구비한 반도체 메모리 및그것을 구동하는 방법
JP2005142354A (ja) 不揮発性半導体記憶装置及びその駆動方法及びその製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20041217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050613

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050613

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050613

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080805

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080922

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081029

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090225

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090401

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090515