JP5524567B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5524567B2
JP5524567B2 JP2009243799A JP2009243799A JP5524567B2 JP 5524567 B2 JP5524567 B2 JP 5524567B2 JP 2009243799 A JP2009243799 A JP 2009243799A JP 2009243799 A JP2009243799 A JP 2009243799A JP 5524567 B2 JP5524567 B2 JP 5524567B2
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Prior art keywords
electrode
gate electrode
layer
transistor
gate
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Japanese (ja)
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JP2010123939A5 (enExample
JP2010123939A (ja
Inventor
秀和 宮入
剛 長多
健吾 秋元
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Shift Register Type Memory (AREA)
JP2009243799A 2008-10-24 2009-10-22 半導体装置 Active JP5524567B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009243799A JP5524567B2 (ja) 2008-10-24 2009-10-22 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008274650 2008-10-24
JP2008274650 2008-10-24
JP2009243799A JP5524567B2 (ja) 2008-10-24 2009-10-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014080962A Division JP2014170950A (ja) 2008-10-24 2014-04-10 インバータ回路

Publications (3)

Publication Number Publication Date
JP2010123939A JP2010123939A (ja) 2010-06-03
JP2010123939A5 JP2010123939A5 (enExample) 2012-10-18
JP5524567B2 true JP5524567B2 (ja) 2014-06-18

Family

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Family Applications (10)

Application Number Title Priority Date Filing Date
JP2009243799A Active JP5524567B2 (ja) 2008-10-24 2009-10-22 半導体装置
JP2014080962A Withdrawn JP2014170950A (ja) 2008-10-24 2014-04-10 インバータ回路
JP2015186168A Active JP6118861B2 (ja) 2008-10-24 2015-09-22 半導体装置
JP2017060978A Withdrawn JP2017147452A (ja) 2008-10-24 2017-03-27 半導体装置
JP2018128705A Active JP6694015B2 (ja) 2008-10-24 2018-07-06 半導体装置
JP2020073432A Withdrawn JP2020127031A (ja) 2008-10-24 2020-04-16 半導体装置
JP2022024510A Withdrawn JP2022084602A (ja) 2008-10-24 2022-02-21 表示装置
JP2023134823A Active JP7529867B2 (ja) 2008-10-24 2023-08-22 表示装置
JP2024119369A Active JP7693917B2 (ja) 2008-10-24 2024-07-25 表示装置
JP2025093995A Pending JP2025120298A (ja) 2008-10-24 2025-06-05 表示装置

Family Applications After (9)

Application Number Title Priority Date Filing Date
JP2014080962A Withdrawn JP2014170950A (ja) 2008-10-24 2014-04-10 インバータ回路
JP2015186168A Active JP6118861B2 (ja) 2008-10-24 2015-09-22 半導体装置
JP2017060978A Withdrawn JP2017147452A (ja) 2008-10-24 2017-03-27 半導体装置
JP2018128705A Active JP6694015B2 (ja) 2008-10-24 2018-07-06 半導体装置
JP2020073432A Withdrawn JP2020127031A (ja) 2008-10-24 2020-04-16 半導体装置
JP2022024510A Withdrawn JP2022084602A (ja) 2008-10-24 2022-02-21 表示装置
JP2023134823A Active JP7529867B2 (ja) 2008-10-24 2023-08-22 表示装置
JP2024119369A Active JP7693917B2 (ja) 2008-10-24 2024-07-25 表示装置
JP2025093995A Pending JP2025120298A (ja) 2008-10-24 2025-06-05 表示装置

Country Status (5)

Country Link
US (3) US8106400B2 (enExample)
JP (10) JP5524567B2 (enExample)
KR (3) KR101477597B1 (enExample)
CN (2) CN104078512B (enExample)
TW (1) TWI514569B (enExample)

Families Citing this family (112)

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Publication number Priority date Publication date Assignee Title
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
KR101579050B1 (ko) 2008-10-03 2015-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
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KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
KR101432764B1 (ko) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR102556313B1 (ko) 2008-11-21 2023-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101782176B1 (ko) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
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