|
JP4974202B2
(ja)
*
|
2001-09-19 |
2012-07-11 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路
|
|
JP2003132683A
(ja)
|
2001-10-23 |
2003-05-09 |
Hitachi Ltd |
半導体装置
|
|
JP2003188351A
(ja)
*
|
2001-12-17 |
2003-07-04 |
Hitachi Ltd |
半導体集積回路
|
|
JP2004021574A
(ja)
*
|
2002-06-17 |
2004-01-22 |
Hitachi Ltd |
半導体装置
|
|
US7173875B2
(en)
*
|
2002-11-29 |
2007-02-06 |
International Business Machines Corporation |
SRAM array with improved cell stability
|
|
JP4388274B2
(ja)
*
|
2002-12-24 |
2009-12-24 |
株式会社ルネサステクノロジ |
半導体記憶装置
|
|
US7027346B2
(en)
*
|
2003-01-06 |
2006-04-11 |
Texas Instruments Incorporated |
Bit line control for low power in standby
|
|
US7039818B2
(en)
*
|
2003-01-22 |
2006-05-02 |
Texas Instruments Incorporated |
Low leakage SRAM scheme
|
|
US7092307B2
(en)
*
|
2003-04-02 |
2006-08-15 |
Qualcomm Inc. |
Leakage current reduction for CMOS memory circuits
|
|
JP2004362695A
(ja)
*
|
2003-06-05 |
2004-12-24 |
Renesas Technology Corp |
半導体記憶装置
|
|
US7061820B2
(en)
*
|
2003-08-27 |
2006-06-13 |
Texas Instruments Incorporated |
Voltage keeping scheme for low-leakage memory devices
|
|
US7369815B2
(en)
*
|
2003-09-19 |
2008-05-06 |
Qualcomm Incorporated |
Power collapse for a wireless terminal
|
|
KR101169370B1
(ko)
|
2004-01-30 |
2012-07-30 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체장치
|
|
US7425841B2
(en)
|
2004-02-14 |
2008-09-16 |
Tabula Inc. |
Configurable circuits, IC's, and systems
|
|
JP4549711B2
(ja)
*
|
2004-03-29 |
2010-09-22 |
ルネサスエレクトロニクス株式会社 |
半導体回路装置
|
|
JP2006040495A
(ja)
*
|
2004-07-30 |
2006-02-09 |
Renesas Technology Corp |
半導体集積回路装置
|
|
US7196925B1
(en)
*
|
2004-08-26 |
2007-03-27 |
Cypress Semiconductor Corporation |
Memory array with current limiting device for preventing particle induced latch-up
|
|
JP4553185B2
(ja)
*
|
2004-09-15 |
2010-09-29 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路装置
|
|
KR101158154B1
(ko)
*
|
2004-09-22 |
2012-06-19 |
에스티 에릭슨 에스에이 |
메모리 회로 및 데이터 보존 제어 방법
|
|
JP2006107127A
(ja)
*
|
2004-10-05 |
2006-04-20 |
Nec Electronics Corp |
半導体集積回路装置
|
|
US7317331B2
(en)
|
2004-11-08 |
2008-01-08 |
Tabula, Inc. |
Reconfigurable IC that has sections running at different reconfiguration rates
|
|
FR2878068A1
(fr)
*
|
2004-11-15 |
2006-05-19 |
St Microelectronics Sa |
Memoire a cellule de memorisation polarisee par groupe
|
|
US7272031B1
(en)
*
|
2005-03-15 |
2007-09-18 |
Tabula, Inc. |
Method and apparatus for reduced power cell
|
|
JP4578329B2
(ja)
*
|
2005-06-03 |
2010-11-10 |
ルネサスエレクトロニクス株式会社 |
半導体記憶装置
|
|
US7355905B2
(en)
|
2005-07-01 |
2008-04-08 |
P.A. Semi, Inc. |
Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage
|
|
JP4671786B2
(ja)
|
2005-07-04 |
2011-04-20 |
パナソニック株式会社 |
半導体集積回路装置
|
|
JP2007035091A
(ja)
*
|
2005-07-22 |
2007-02-08 |
Sony Corp |
半導体記憶装置
|
|
US7894291B2
(en)
*
|
2005-09-26 |
2011-02-22 |
International Business Machines Corporation |
Circuit and method for controlling a standby voltage level of a memory
|
|
JP2007122814A
(ja)
*
|
2005-10-28 |
2007-05-17 |
Oki Electric Ind Co Ltd |
半導体集積回路及びリーク電流低減方法
|
|
US7568177B1
(en)
*
|
2005-10-31 |
2009-07-28 |
Cadence Design Systems, Inc. |
System and method for power gating of an integrated circuit
|
|
JP2007157199A
(ja)
*
|
2005-12-01 |
2007-06-21 |
Matsushita Electric Ind Co Ltd |
半導体装置
|
|
US7366036B2
(en)
*
|
2006-01-13 |
2008-04-29 |
International Business Machines Corporation |
Memory device with control circuit for regulating power supply voltage
|
|
US7911855B2
(en)
*
|
2006-02-24 |
2011-03-22 |
Renesas Technology Corp. |
Semiconductor device with voltage interconnections
|
|
JP2007226632A
(ja)
|
2006-02-24 |
2007-09-06 |
Denso Corp |
マイクロコンピュータ
|
|
JP2007234861A
(ja)
|
2006-03-01 |
2007-09-13 |
Renesas Technology Corp |
半導体装置の製造方法
|
|
JP4805698B2
(ja)
*
|
2006-03-13 |
2011-11-02 |
株式会社東芝 |
半導体記憶装置
|
|
JP4936749B2
(ja)
*
|
2006-03-13 |
2012-05-23 |
株式会社東芝 |
半導体記憶装置
|
|
US7489560B2
(en)
*
|
2006-04-05 |
2009-02-10 |
Spansion Llc |
Reduction of leakage current and program disturbs in flash memory devices
|
|
TWI318344B
(en)
*
|
2006-05-10 |
2009-12-11 |
Realtek Semiconductor Corp |
Substrate biasing apparatus
|
|
JP4702179B2
(ja)
*
|
2006-05-22 |
2011-06-15 |
株式会社デンソー |
A/d変換回路
|
|
US7542329B2
(en)
*
|
2006-07-19 |
2009-06-02 |
International Business Machines Corporation |
Virtual power rails for integrated circuits
|
|
JP5034379B2
(ja)
|
2006-08-30 |
2012-09-26 |
富士通セミコンダクター株式会社 |
半導体メモリおよびシステム
|
|
JP2008071462A
(ja)
*
|
2006-09-15 |
2008-03-27 |
Toshiba Corp |
半導体記憶装置
|
|
JP5057757B2
(ja)
*
|
2006-11-30 |
2012-10-24 |
株式会社東芝 |
半導体集積回路
|
|
US7596012B1
(en)
*
|
2006-12-04 |
2009-09-29 |
Marvell International Ltd. |
Write-assist and power-down circuit for low power SRAM applications
|
|
JP5057430B2
(ja)
|
2006-12-18 |
2012-10-24 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路とその製造方法
|
|
JP5143413B2
(ja)
*
|
2006-12-20 |
2013-02-13 |
オンセミコンダクター・トレーディング・リミテッド |
半導体集積回路
|
|
ITVA20060081A1
(it)
*
|
2006-12-22 |
2008-06-23 |
St Microelectronics Srl |
Riduzione del consumo da parte di un sistema elettronico integrato comprendente distinte risorse statiche ad accesso casuale di memorizzazione dati
|
|
JP2008191442A
(ja)
*
|
2007-02-06 |
2008-08-21 |
Nec Electronics Corp |
表示ドライバic
|
|
US7688669B2
(en)
*
|
2007-02-15 |
2010-03-30 |
Stmicroelectronics, Inc. |
Programmable SRAM source bias scheme for use with switchable SRAM power supply sets of voltages
|
|
US7623405B2
(en)
|
2007-02-15 |
2009-11-24 |
Stmicroelectronics, Inc. |
SRAM with switchable power supply sets of voltages
|
|
US20080211513A1
(en)
*
|
2007-02-15 |
2008-09-04 |
Stmicroelectronics, Inc. |
Initiation of fuse sensing circuitry and storage of sensed fuse status information
|
|
US8112468B1
(en)
|
2007-03-22 |
2012-02-07 |
Tabula, Inc. |
Method and apparatus for performing an operation with a plurality of sub-operations in a configurable IC
|
|
US7414878B1
(en)
|
2007-05-04 |
2008-08-19 |
International Business Machines Corporation |
Method for implementing domino SRAM leakage current reduction
|
|
US20080285367A1
(en)
*
|
2007-05-18 |
2008-11-20 |
Chang Ho Jung |
Method and apparatus for reducing leakage current in memory arrays
|
|
JP4364260B2
(ja)
*
|
2007-05-28 |
2009-11-11 |
株式会社東芝 |
半導体記憶装置
|
|
US8107288B2
(en)
*
|
2007-06-29 |
2012-01-31 |
Nxp B.V. |
Static memory devices
|
|
US7626852B2
(en)
*
|
2007-07-23 |
2009-12-01 |
Texas Instruments Incorporated |
Adaptive voltage control for SRAM
|
|
US7606061B2
(en)
*
|
2007-08-07 |
2009-10-20 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
SRAM device with a power saving module controlled by word line signals
|
|
US8344755B2
(en)
|
2007-09-06 |
2013-01-01 |
Tabula, Inc. |
Configuration context switcher
|
|
JP2009064512A
(ja)
*
|
2007-09-06 |
2009-03-26 |
Panasonic Corp |
半導体記憶装置
|
|
JP4877195B2
(ja)
*
|
2007-10-29 |
2012-02-15 |
日本電気株式会社 |
情報処理装置及びデータ転送方法
|
|
TWI375957B
(en)
|
2007-12-03 |
2012-11-01 |
Higgs Opl Capital Llc |
Memory and method for reducing power dissipation caused by current leakage
|
|
US20090161410A1
(en)
*
|
2007-12-21 |
2009-06-25 |
Texas Instruments Inc. |
Seven transistor sram cell
|
|
JP4954862B2
(ja)
*
|
2007-12-25 |
2012-06-20 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路
|
|
US8589706B2
(en)
*
|
2007-12-26 |
2013-11-19 |
Intel Corporation |
Data inversion based approaches for reducing memory power consumption
|
|
KR20100121475A
(ko)
*
|
2008-01-30 |
2010-11-17 |
에이저 시스템즈 인크 |
전자 회로의 수율을 증가시키는 방법 및 장치
|
|
CN101504863B
(zh)
*
|
2008-02-05 |
2012-03-14 |
财团法人工业技术研究院 |
存储器与抑制存储器漏电流能量损耗的方法
|
|
US7864600B2
(en)
*
|
2008-06-19 |
2011-01-04 |
Texas Instruments Incorporated |
Memory cell employing reduced voltage
|
|
US8139426B2
(en)
*
|
2008-08-15 |
2012-03-20 |
Qualcomm Incorporated |
Dual power scheme in memory circuit
|
|
US7848172B2
(en)
*
|
2008-11-24 |
2010-12-07 |
Agere Systems Inc. |
Memory circuit having reduced power consumption
|
|
KR100968156B1
(ko)
*
|
2008-12-05 |
2010-07-06 |
주식회사 하이닉스반도체 |
전원제어회로 및 이를 이용한 반도체 메모리 장치
|
|
US8482964B2
(en)
*
|
2008-12-31 |
2013-07-09 |
Stmicroelectronics, Inc. |
Robust SRAM memory cell capacitor plate voltage generator
|
|
KR101539297B1
(ko)
|
2009-01-05 |
2015-07-24 |
삼성전자주식회사 |
반도체 장치, 이를 포함하는 반도체 시스템, 및 반도체 장치의 전압 공급방법
|
|
US8780658B2
(en)
*
|
2009-03-03 |
2014-07-15 |
Qualcomm Incorporated |
Leakage reduction in memory devices
|
|
US8324665B2
(en)
*
|
2009-04-21 |
2012-12-04 |
Texas Instruments Incorporated |
SRAM cell with different crystal orientation than associated logic
|
|
FR2945152B1
(fr)
*
|
2009-04-29 |
2011-07-29 |
Stmicroelectronics Wireless Sas |
Ensemble de circuit electronique composite
|
|
KR101651859B1
(ko)
*
|
2009-06-05 |
2016-09-12 |
삼성전자주식회사 |
사용자별 ui 제공방법 및 이를 적용한 디바이스
|
|
WO2010151333A1
(en)
*
|
2009-06-25 |
2010-12-29 |
Certusview Technologies, Llc |
Locating equipment for and methods of simulating locate operations for training and/or skills evaluation
|
|
JP5190542B2
(ja)
|
2009-09-02 |
2013-04-24 |
パナソニック株式会社 |
半導体記憶装置
|
|
JP5317900B2
(ja)
|
2009-09-14 |
2013-10-16 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路およびその動作方法
|
|
JP2011123970A
(ja)
|
2009-12-14 |
2011-06-23 |
Renesas Electronics Corp |
半導体記憶装置
|
|
CN102122527B
(zh)
*
|
2010-01-11 |
2013-02-06 |
智原科技股份有限公司 |
存储器电路以及控制存储器电路的方法
|
|
KR20110132073A
(ko)
*
|
2010-06-01 |
2011-12-07 |
삼성전자주식회사 |
칩 및 칩 테스트 시스템
|
|
US8576611B2
(en)
*
|
2010-07-08 |
2013-11-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Memory with regulated ground nodes
|
|
JP5539241B2
(ja)
*
|
2010-09-30 |
2014-07-02 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路装置
|
|
WO2012098900A1
(ja)
*
|
2011-01-20 |
2012-07-26 |
パナソニック株式会社 |
半導体記憶装置
|
|
JP5645708B2
(ja)
*
|
2011-02-24 |
2014-12-24 |
株式会社日立製作所 |
半導体装置
|
|
TWI489457B
(zh)
*
|
2011-04-07 |
2015-06-21 |
修平學校財團法人修平科技大學 |
具待機啟動電路之單埠靜態隨機存取記憶體
|
|
US8804407B1
(en)
|
2011-07-12 |
2014-08-12 |
Altera Corporation |
PMOS pass gate
|
|
US8630139B2
(en)
|
2011-11-30 |
2014-01-14 |
International Business Machines Corporation |
Dual power supply memory array having a control circuit that dynamically selects a lower of two supply voltages for bitline pre-charge operations and an associated method
|
|
JP6201259B2
(ja)
*
|
2012-01-01 |
2017-09-27 |
国立大学法人東北大学 |
集積回路
|
|
US8995175B1
(en)
*
|
2012-01-13 |
2015-03-31 |
Altera Corporation |
Memory circuit with PMOS access transistors
|
|
SG10201605470SA
(en)
|
2012-01-23 |
2016-08-30 |
Semiconductor Energy Lab Co Ltd |
Semiconductor device
|
|
US9160312B2
(en)
*
|
2012-02-09 |
2015-10-13 |
Dust Networks, Inc. |
Low leakage circuits, devices, and techniques
|
|
US9104395B2
(en)
|
2012-05-02 |
2015-08-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Processor and driving method thereof
|
|
JP6185311B2
(ja)
|
2012-07-20 |
2017-08-23 |
株式会社半導体エネルギー研究所 |
電源制御回路、及び信号処理回路
|
|
KR102088865B1
(ko)
|
2012-09-03 |
2020-03-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
마이크로 컨트롤러
|
|
JP6003420B2
(ja)
|
2012-09-06 |
2016-10-05 |
富士通株式会社 |
回路システムおよび半導体装置
|
|
KR102168987B1
(ko)
|
2012-10-17 |
2020-10-22 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
마이크로컨트롤러 및 그 제조 방법
|
|
US9449656B2
(en)
*
|
2013-01-03 |
2016-09-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Memory with bit cell header transistor
|
|
TWI490858B
(zh)
*
|
2013-02-07 |
2015-07-01 |
Univ Hsiuping Sci & Tech |
單埠靜態隨機存取記憶體(一)
|
|
TWI509605B
(zh)
*
|
2013-02-07 |
2015-11-21 |
Univ Hsiuping Sci & Tech |
靜態隨機存取記憶體(二)
|
|
JP2015015072A
(ja)
*
|
2013-07-09 |
2015-01-22 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
KR20160040577A
(ko)
*
|
2013-08-06 |
2016-04-14 |
르네사스 일렉트로닉스 가부시키가이샤 |
반도체 집적 회로 장치
|
|
EP2849218B1
(en)
*
|
2013-09-16 |
2016-02-03 |
ST-Ericsson SA |
Integrated circuit of CMOS type comprising first and second circuit parts
|
|
US9508405B2
(en)
*
|
2013-10-03 |
2016-11-29 |
Stmicroelectronics International N.V. |
Method and circuit to enable wide supply voltage difference in multi-supply memory
|
|
US20160020199A1
(en)
*
|
2014-07-15 |
2016-01-21 |
Mediatek Inc. |
Semiconductor structure with spare cell region
|
|
US9311989B2
(en)
*
|
2014-07-15 |
2016-04-12 |
Texas Instruments Incorporated |
Power gate for latch-up prevention
|
|
US20160035412A1
(en)
*
|
2014-07-31 |
2016-02-04 |
Texas Instruments Incorporated |
Fail-safe i/o to achieve ultra low system power
|
|
JP6230204B2
(ja)
*
|
2014-08-12 |
2017-11-15 |
国立研究開発法人科学技術振興機構 |
記憶回路
|
|
JP6392082B2
(ja)
*
|
2014-10-31 |
2018-09-19 |
ルネサスエレクトロニクス株式会社 |
半導体記憶装置
|
|
JP6340310B2
(ja)
|
2014-12-17 |
2018-06-06 |
ルネサスエレクトロニクス株式会社 |
半導体集積回路装置およびウェラブル装置
|
|
US9443564B2
(en)
*
|
2015-01-26 |
2016-09-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device, electronic component, and electronic device
|
|
US9350332B1
(en)
*
|
2015-02-11 |
2016-05-24 |
SK Hynix Inc. |
Semiconductor device including retention circuit
|
|
US20170010733A1
(en)
*
|
2015-07-09 |
2017-01-12 |
Microsoft Technology Licensing, Llc |
User-identifying application programming interface (api)
|
|
US9431098B1
(en)
*
|
2015-08-10 |
2016-08-30 |
International Business Machines Corporation |
Structure for reducing pre-charge voltage for static random-access memory arrays
|
|
US9496024B1
(en)
*
|
2015-12-18 |
2016-11-15 |
Texas Instruments Incorporated |
Automatic latch-up prevention in SRAM
|
|
JP6727810B2
(ja)
|
2016-01-07 |
2020-07-22 |
キヤノン株式会社 |
情報処理装置、情報処理装置の制御方法、およびプログラム
|
|
DE112017001059T5
(de)
*
|
2016-02-29 |
2018-11-29 |
Sony Corporation |
Halbleiterschaltkreis, verfahren zur ansteuerung des halbleiterschaltkreises und elektronische vorrichtung
|
|
JP2016177864A
(ja)
*
|
2016-04-26 |
2016-10-06 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
US10037400B2
(en)
*
|
2016-06-02 |
2018-07-31 |
Marvell World Trade Ltd. |
Integrated circuit manufacturing process for aligning threshold voltages of transistors
|
|
US9922701B2
(en)
*
|
2016-08-08 |
2018-03-20 |
Taiwan Semiconductor Manufacturing Company Limited |
Pre-charging bit lines through charge-sharing
|
|
FR3066667B1
(fr)
*
|
2017-05-19 |
2019-06-07 |
Paragon Id |
" procede et systeme de transmission serie de donnees "
|
|
US10347316B2
(en)
*
|
2017-08-04 |
2019-07-09 |
Micron Technology, Inc. |
Input buffer circuit
|
|
JP7013359B2
(ja)
*
|
2018-11-02 |
2022-01-31 |
ルネサスエレクトロニクス株式会社 |
半導体装置及びデータ保持方法
|
|
KR102577748B1
(ko)
*
|
2018-11-29 |
2023-09-14 |
에스케이하이닉스 주식회사 |
전원 제어 회로 및 이를 이용하는 반도체 장치
|
|
JP7195133B2
(ja)
*
|
2018-12-19 |
2022-12-23 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
WO2020142743A1
(en)
*
|
2019-01-05 |
2020-07-09 |
Synopsys, Inc. |
Enhanced read sensing margin and minimized vdd for sram cell arrays
|
|
JP2020149746A
(ja)
*
|
2019-03-14 |
2020-09-17 |
キオクシア株式会社 |
半導体記憶装置
|
|
WO2020241000A1
(ja)
|
2019-05-30 |
2020-12-03 |
国立研究開発法人科学技術振興機構 |
電子回路および双安定回路
|
|
CN112382326B
(zh)
*
|
2020-12-11 |
2023-11-17 |
北京中科芯蕊科技有限公司 |
一种亚阈值双电源sram读辅助电路
|
|
CN112951830B
(zh)
*
|
2021-02-01 |
2023-02-07 |
泉芯集成电路制造(济南)有限公司 |
集成电路器件、存储器和电子设备
|
|
CN113674773B
(zh)
*
|
2021-08-17 |
2025-11-25 |
晟合微电子(肇庆)有限公司 |
显示器及半导体存储器件
|
|
JP7672935B2
(ja)
|
2021-09-21 |
2025-05-08 |
ルネサスエレクトロニクス株式会社 |
半導体装置
|
|
US12400687B2
(en)
|
2022-05-31 |
2025-08-26 |
Mediatek Inc. |
Semiconductor die having on-die power switch for selecting target operation voltage from operation voltages provided by different power sources
|
|
TWI813379B
(zh)
*
|
2022-07-14 |
2023-08-21 |
瑞昱半導體股份有限公司 |
用於靜態隨機存取記憶體的輸出控制介面
|
|
US20250157529A1
(en)
*
|
2023-11-15 |
2025-05-15 |
Globalfoundries U.S. Inc. |
Memory structure including a low cell supply voltage programming circuit
|