DE1134459B - Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium - Google Patents

Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium

Info

Publication number
DE1134459B
DE1134459B DES67478A DES0067478A DE1134459B DE 1134459 B DE1134459 B DE 1134459B DE S67478 A DES67478 A DE S67478A DE S0067478 A DES0067478 A DE S0067478A DE 1134459 B DE1134459 B DE 1134459B
Authority
DE
Germany
Prior art keywords
silicon
semiconductor component
semiconductor
body made
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES67478A
Other languages
German (de)
English (en)
Inventor
Dr Friedrich Bischoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL122356D priority Critical patent/NL122356C/xx
Priority to NL246576D priority patent/NL246576A/xx
Priority to FR78434D priority patent/FR78434E/fr
Priority to NL233004D priority patent/NL233004A/xx
Priority to NL258754D priority patent/NL258754A/xx
Priority to NL113118D priority patent/NL113118C/xx
Priority to NL218408D priority patent/NL218408A/xx
Priority to NL130620D priority patent/NL130620C/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES39209A priority patent/DE1102117B/de
Priority to DES67478A priority patent/DE1134459B/de
Priority to DES42803A priority patent/DE1223815B/de
Priority to CH473362A priority patent/CH509824A/de
Priority to CH358411D priority patent/CH358411A/de
Priority to GB14233/55A priority patent/GB809250A/en
Priority to CH753160A priority patent/CH494590A/de
Priority to FR1125207D priority patent/FR1125207A/fr
Priority to DES49371A priority patent/DE1193022B/de
Priority to FR70442D priority patent/FR70442E/fr
Priority to DES50407A priority patent/DE1185449B/de
Priority to US668209A priority patent/US2854318A/en
Priority to CH4780657A priority patent/CH378863A/de
Priority to GB21435/57A priority patent/GB833290A/en
Priority to FR1182346D priority patent/FR1182346A/fr
Priority to DES55831A priority patent/DE1211610B/de
Priority to DES56317A priority patent/DE1208298B/de
Priority to DE1958S0058219 priority patent/DE1217348C2/de
Priority to US772063A priority patent/US3063811A/en
Priority to CH6585358A priority patent/CH416582A/de
Priority to GB36224/58A priority patent/GB898342A/en
Priority to FR778915A priority patent/FR74391E/fr
Priority to US774413A priority patent/US2981605A/en
Priority to FR781813A priority patent/FR74664E/fr
Priority to GB40896/58A priority patent/GB849718A/en
Priority to DES61117A priority patent/DE1209113B/de
Priority to GB41883/59A priority patent/GB907510A/en
Priority to FR812561A priority patent/FR77011E/fr
Priority to CH8185859A priority patent/CH424732A/de
Priority to DES66308A priority patent/DE1212949B/de
Priority to GB43550/59A priority patent/GB889192A/en
Priority to FR813996A priority patent/FR77018E/fr
Priority to GB32747/60A priority patent/GB908373A/en
Priority to FR842704A priority patent/FR78837E/fr
Priority to GB37496/60A priority patent/GB922280A/en
Priority to CH1344660A priority patent/CH440228A/de
Priority to GB43351/60A priority patent/GB938699A/en
Priority to FR847269A priority patent/FR79005E/fr
Priority to US87885A priority patent/US3146123A/en
Priority to DES69895A priority patent/DE1235266B/de
Publication of DE1134459B publication Critical patent/DE1134459B/de
Priority to US230033A priority patent/US3232792A/en
Priority to US242478A priority patent/US3335697A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/14—Single-crystal growth from melt solutions using molten solvents by electrolysis
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Automation & Control Theory (AREA)
  • Ceramic Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • General Induction Heating (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
DES67478A 1954-05-18 1954-05-18 Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium Pending DE1134459B (de)

Priority Applications (50)

Application Number Priority Date Filing Date Title
NL122356D NL122356C (ko) 1954-05-18
NL246576D NL246576A (ko) 1954-05-18
FR78434D FR78434E (ko) 1954-05-18
NL233004D NL233004A (ko) 1954-05-18
NL258754D NL258754A (ko) 1954-05-18
NL113118D NL113118C (ko) 1954-05-18
NL218408D NL218408A (ko) 1954-05-18
NL130620D NL130620C (ko) 1954-05-18
DES39209A DE1102117B (de) 1954-05-18 1954-05-18 Verfahren zum Herstellen von reinstem Silicium
DES67478A DE1134459B (de) 1954-05-18 1954-05-18 Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium
DES42803A DE1223815B (de) 1954-05-18 1955-02-24 Verfahren zur Herstellung von reinstem Silicium
CH473362A CH509824A (de) 1954-05-18 1955-05-17 Verfahren zum Herstellen eines aus mindestens zwei halbleitenden chemischen Elementen zusammengesetzten, mindestens teilweise legierten Halbleitermaterials
CH358411D CH358411A (de) 1954-05-18 1955-05-17 Verfahren zum Herstellen eines Halbleitereigenschaften aufweisenden chemischen Elementes in kompakt-kristallinem Zustand
GB14233/55A GB809250A (en) 1954-05-18 1955-05-17 Improvements in or relating to processes and apparatus for the production of ultra-pure substances
CH753160A CH494590A (de) 1954-05-18 1955-05-17 Verfahren zum Herstellen einer aus mindestens zwei chemischen Elementen bestehenden kompakt kristallinen halbleitenden Verbindung
FR1125207D FR1125207A (fr) 1954-05-18 1955-05-18 Procédé de préparation de substances très pures de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
DES49371A DE1193022B (de) 1954-05-18 1956-07-06 Verfahren zur Herstellung von reinstem Silicium
FR70442D FR70442E (fr) 1954-05-18 1956-08-08 Procédé de préparation de substances très pures, de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
DES50407A DE1185449B (de) 1954-05-18 1956-09-18 Einrichtung zum Herstellen von reinsten Halbleiterstoffen
US668209A US2854318A (en) 1954-05-18 1957-06-26 Method of and apparatus for producing semiconductor materials
CH4780657A CH378863A (de) 1954-05-18 1957-06-28 Verfahren zur Herstellung eines Halbleitereigenschaften aufweisenden chemischen Elementes
GB21435/57A GB833290A (en) 1954-05-18 1957-07-05 Improvements in or relating to processes and apparatus for the production of ultra-pure substances
FR1182346D FR1182346A (fr) 1954-05-18 1957-07-06 Procédé et dispositif pour la fabrication de produits semi-conducteurs
DES55831A DE1211610B (de) 1954-05-18 1957-11-11 Verfahren zur Herstellung von reinstem Silicium
DES56317A DE1208298B (de) 1954-05-18 1957-12-19 Verfahren zum Herstellen von Silicium fuer Halbleiteranordnungen
DE1958S0058219 DE1217348C2 (de) 1954-05-18 1958-05-14 Verfahren zur Herstellung von reinstem Silicium
US772063A US3063811A (en) 1954-05-18 1958-11-05 Method of producing rodshaped bodies of crystalline silicon for semiconductor devices and semiconductor bodies obtained therefrom
CH6585358A CH416582A (de) 1954-05-18 1958-11-05 Verfahren zum Herstellen von kristallischem Silizium für Halbleiteranordnungen
GB36224/58A GB898342A (en) 1954-05-18 1958-11-11 Improvements in or relating to methods of producing purified silicon
FR778915A FR74391E (fr) 1954-05-18 1958-11-12 Procédé de préparation de substances très pures, de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
US774413A US2981605A (en) 1954-05-18 1958-11-17 Method of and apparatus for producing highly pure rodlike semiconductor bodies
FR781813A FR74664E (fr) 1954-05-18 1958-12-16 Procédé de préparation de substances très pures, de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
GB40896/58A GB849718A (en) 1954-05-18 1958-12-18 Improvements in or relating to semi-conductor production
DES61117A DE1209113B (de) 1954-05-18 1958-12-23 Verfahren zum Herstellen von hochreinem Silicium
GB41883/59A GB907510A (en) 1954-05-18 1959-12-09 Improvements in or relating to processes and apparatus for the production of ultra-pure semi-conductor materials
FR812561A FR77011E (fr) 1954-05-18 1959-12-09 Procédé de préparation de substances très pures de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
CH8185859A CH424732A (de) 1954-05-18 1959-12-15 Verfahren zum Herstellen eines hochreinen Halbleiterstabes
DES66308A DE1212949B (de) 1954-05-18 1959-12-17 Verfahren zum Herstellen von hochreinem Silicium
GB43550/59A GB889192A (en) 1954-05-18 1959-12-22 Improvements in or relating to processes and apparatus for the production of ultra-pure semi-conductor substances
FR813996A FR77018E (fr) 1954-05-18 1959-12-23 Procédé de préparation de substances très pures, de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
GB32747/60A GB908373A (en) 1954-05-18 1960-09-23 Improvements in or relating to processes and apparatus for producing semi-conductor substances of very high purity
FR842704A FR78837E (fr) 1954-05-18 1960-10-31 Procédé de préparation de substances très pures de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
GB37496/60A GB922280A (en) 1954-05-18 1960-11-01 Improvements in or relating to processes and apparatus for the production of ultra-pure semiconductor substances
CH1344660A CH440228A (de) 1954-05-18 1960-11-29 Verfahren zum Herstellen eines hochreinen Siliziumstabes
GB43351/60A GB938699A (en) 1954-05-18 1960-12-16 Improvements in or relating to processes and apparatus for the production of ultra-pure semi-conductor substances
FR847269A FR79005E (fr) 1954-05-18 1960-12-17 Procédé de préparation de substances très pures, de préférence pour emploi comme semi-conducteurs, dispositif pour sa réalisation et produits conformes à ceux obtenus
US87885A US3146123A (en) 1954-05-18 1961-02-08 Method for producing pure silicon
DES69895A DE1235266B (de) 1954-05-18 1961-05-18 Verfahren zum Herstellen reinster kristalliner Stoffe, insbesondere fuer Halbleiterzwecke
US230033A US3232792A (en) 1954-05-18 1962-10-10 Method for producing hyperpure silicon
US242478A US3335697A (en) 1954-05-18 1962-12-05 Apparatus for vapor deposition of silicon

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
DES67478A DE1134459B (de) 1954-05-18 1954-05-18 Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium
DES39209A DE1102117B (de) 1954-05-18 1954-05-18 Verfahren zum Herstellen von reinstem Silicium
DES42803A DE1223815B (de) 1954-05-18 1955-02-24 Verfahren zur Herstellung von reinstem Silicium
DES0042824 1955-02-25
DES49371A DE1193022B (de) 1954-05-18 1956-07-06 Verfahren zur Herstellung von reinstem Silicium
DES50407A DE1185449B (de) 1954-05-18 1956-09-18 Einrichtung zum Herstellen von reinsten Halbleiterstoffen
DES55831A DE1211610B (de) 1954-05-18 1957-11-11 Verfahren zur Herstellung von reinstem Silicium
DES56317A DE1208298B (de) 1954-05-18 1957-12-19 Verfahren zum Herstellen von Silicium fuer Halbleiteranordnungen
DE1958S0058219 DE1217348C2 (de) 1954-05-18 1958-05-14 Verfahren zur Herstellung von reinstem Silicium
DES61117A DE1209113B (de) 1954-05-18 1958-12-23 Verfahren zum Herstellen von hochreinem Silicium
DES66308A DE1212949B (de) 1954-05-18 1959-12-17 Verfahren zum Herstellen von hochreinem Silicium
DES69895A DE1235266B (de) 1954-05-18 1961-05-18 Verfahren zum Herstellen reinster kristalliner Stoffe, insbesondere fuer Halbleiterzwecke

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DE1134459B true DE1134459B (de) 1962-08-09

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DES67478A Pending DE1134459B (de) 1954-05-18 1954-05-18 Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium
DES39209A Pending DE1102117B (de) 1954-05-18 1954-05-18 Verfahren zum Herstellen von reinstem Silicium
DES42803A Pending DE1223815B (de) 1954-05-18 1955-02-24 Verfahren zur Herstellung von reinstem Silicium
DES49371A Pending DE1193022B (de) 1954-05-18 1956-07-06 Verfahren zur Herstellung von reinstem Silicium
DES50407A Pending DE1185449B (de) 1954-05-18 1956-09-18 Einrichtung zum Herstellen von reinsten Halbleiterstoffen
DES55831A Pending DE1211610B (de) 1954-05-18 1957-11-11 Verfahren zur Herstellung von reinstem Silicium
DES56317A Pending DE1208298B (de) 1954-05-18 1957-12-19 Verfahren zum Herstellen von Silicium fuer Halbleiteranordnungen
DE1958S0058219 Expired DE1217348C2 (de) 1954-05-18 1958-05-14 Verfahren zur Herstellung von reinstem Silicium
DES61117A Pending DE1209113B (de) 1954-05-18 1958-12-23 Verfahren zum Herstellen von hochreinem Silicium
DES66308A Pending DE1212949B (de) 1954-05-18 1959-12-17 Verfahren zum Herstellen von hochreinem Silicium
DES69895A Pending DE1235266B (de) 1954-05-18 1961-05-18 Verfahren zum Herstellen reinster kristalliner Stoffe, insbesondere fuer Halbleiterzwecke

Family Applications After (10)

Application Number Title Priority Date Filing Date
DES39209A Pending DE1102117B (de) 1954-05-18 1954-05-18 Verfahren zum Herstellen von reinstem Silicium
DES42803A Pending DE1223815B (de) 1954-05-18 1955-02-24 Verfahren zur Herstellung von reinstem Silicium
DES49371A Pending DE1193022B (de) 1954-05-18 1956-07-06 Verfahren zur Herstellung von reinstem Silicium
DES50407A Pending DE1185449B (de) 1954-05-18 1956-09-18 Einrichtung zum Herstellen von reinsten Halbleiterstoffen
DES55831A Pending DE1211610B (de) 1954-05-18 1957-11-11 Verfahren zur Herstellung von reinstem Silicium
DES56317A Pending DE1208298B (de) 1954-05-18 1957-12-19 Verfahren zum Herstellen von Silicium fuer Halbleiteranordnungen
DE1958S0058219 Expired DE1217348C2 (de) 1954-05-18 1958-05-14 Verfahren zur Herstellung von reinstem Silicium
DES61117A Pending DE1209113B (de) 1954-05-18 1958-12-23 Verfahren zum Herstellen von hochreinem Silicium
DES66308A Pending DE1212949B (de) 1954-05-18 1959-12-17 Verfahren zum Herstellen von hochreinem Silicium
DES69895A Pending DE1235266B (de) 1954-05-18 1961-05-18 Verfahren zum Herstellen reinster kristalliner Stoffe, insbesondere fuer Halbleiterzwecke

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US (5) US2854318A (ko)
CH (6) CH509824A (ko)
DE (11) DE1134459B (ko)
FR (2) FR1125207A (ko)
GB (6) GB809250A (ko)
NL (7) NL113118C (ko)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130620C (ko) * 1954-05-18 1900-01-01
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
US3021197A (en) * 1956-11-20 1962-02-13 Olin Mathieson Preparation of diborane
DE1207922B (de) * 1957-04-30 1965-12-30 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US2993763A (en) * 1957-11-14 1961-07-25 Plessey Co Ltd Manufacturing process for the preparation of flakes of sintered silicon
DE1081869B (de) * 1957-12-03 1960-05-19 Siemens Ag Verfahren zur Herstellung von Silicium-Einkristallen
DE1198321B (de) * 1958-01-06 1965-08-12 Int Standard Electric Corp Verfahren zur Herstellung von Halbleitermaterial grosser Reinheit
DE1098496B (de) * 1958-04-11 1961-02-02 Wacker Chemie Gmbh Verfahren zur gleichzeitigen Herstellung von kristallinem oder amorphem Silicium und Siliciumverbindungen mit Si-Si-Bindungen
NL236697A (ko) * 1958-05-16
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
NL238464A (ko) * 1958-05-29
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
DE1123653B (de) * 1958-07-25 1962-02-15 Gen Electric Verfahren zum Herstellen von Siliciumtetrajodid
US3017251A (en) * 1958-08-19 1962-01-16 Du Pont Process for the production of silicon
NL242264A (ko) * 1958-09-20 1900-01-01
NL295321A (ko) * 1958-12-09
NL130371C (ko) * 1958-12-16 1900-01-01
DE1154796B (de) * 1958-12-16 1963-09-26 Western Electric Co Verfahren zum Reinigen von Silicium- oder Germaniumverbindungen
NL246971A (ko) * 1959-01-02 1900-01-01
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
NL251143A (ko) * 1959-05-04
DE1140548B (de) * 1959-06-25 1962-12-06 Siemens Ag Verfahren zum Herstellen von einkristallinen Halbleiterkoerpern
NL256017A (ko) * 1959-09-23 1900-01-01
NL256255A (ko) * 1959-11-02
DE1128412B (de) * 1959-12-17 1962-04-26 Metallgesellschaft Ag Verfahren zur Herstellung von Reinstsilicium durch thermische Zersetzung von gasfoermigen Siliciumverbindungen
DE1147567B (de) * 1960-01-15 1963-04-25 Siemens Ag Verfahren zum Gewinnen von insbesondere einkristallinem, halbleitendem Silicium
NL262949A (ko) * 1960-04-02 1900-01-01
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
DE1123300B (de) * 1960-06-03 1962-02-08 Siemens Ag Verfahren zur Herstellung von Silicium oder Germanium
DE1155098B (de) * 1960-06-10 1963-10-03 Siemens Ag Verfahren zur Gewinnung von reinstem Silicium
US3161474A (en) * 1960-06-21 1964-12-15 Siemens Ag Method for producing hyperpure semiconducting elements from their halogen compounds
DE1129145B (de) * 1960-07-07 1962-05-10 Knapsack Ag Verfahren zur Herstellung von hochreinem Silicium
US3134694A (en) * 1960-08-25 1964-05-26 Siemens Ag Apparatus for accurately controlling the production of semiconductor rods
DE1216842B (de) * 1960-09-30 1966-05-18 Karl Ernst Hoffmann Verfahren zur Herstellung von reinstem Silicium und Germanium
DE1138746B (de) * 1960-10-22 1962-10-31 Int Standard Electric Corp Verfahren zur Reinigung von Siliciumtetrachlorid
DE1419717A1 (de) * 1960-12-06 1968-10-17 Siemens Ag Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben
DE1198787B (de) * 1960-12-17 1965-08-19 Siemens Ag Verfahren zur Gewinnung von reinstem Silicium, Siliciumkarbid oder Germanium aus ihren gasfoermigen Verbindungen
NL277330A (ko) * 1961-04-22
US3188244A (en) * 1961-04-24 1965-06-08 Tektronix Inc Method of forming pn junction in semiconductor material
DE1193486B (de) * 1961-06-19 1965-05-26 Siemens Ag Verfahren zum Herstellen von n-leitendem Silicium
NL281754A (ko) * 1961-08-04
DE1215110B (de) * 1961-08-14 1966-04-28 Siemens Ag Vorrichtung zum Einspannen des Endes eines Stabes bei Apparaturen zum tiegellosen Zonenschmelzen
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates
NL288035A (ko) * 1962-01-24
US3152932A (en) * 1962-01-29 1964-10-13 Hughes Aircraft Co Reduction in situ of a dipolar molecular gas adhering to a substrate
DE1255635B (de) * 1962-06-14 1967-12-07 Siemens Ag Verfahren zum Herstellen kristalliner, insbesondere einkristalliner Schichten aus halbleitenden Stoffen
DE1188057B (de) * 1962-06-18 1965-03-04 Siemens Ag Verfahren zum Reinigen von Siliciumstaeben
DE1444526B2 (de) * 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Verfahren zum Abscheiden eines halb leitenden Elements
DE1184733B (de) * 1962-09-15 1965-01-07 Siemens Ag Anordnung zur Stromversorgung eines zu beheizenden Traegers einer Anlage zur Gewinnung reinsten Halbleitermaterials durch Abscheidung aus der Gasphase
DE1268599B (de) * 1963-03-27 1968-05-22 Siemens Ag Verfahren zum Herstellen einkristalliner Staebe durch Aufwachsen aus der Gasphase
US3310426A (en) * 1963-10-02 1967-03-21 Siemens Ag Method and apparatus for producing semiconductor material
DE1286512B (de) * 1963-10-08 1969-01-09 Siemens Ag Verfahren zur Herstellung von insbesondere stabfoermigen Halbleiterkristallen mit ueber den ganzen Kristall homogener oder annaehernd homogener Dotierung
US3381114A (en) * 1963-12-28 1968-04-30 Nippon Electric Co Device for manufacturing epitaxial crystals
DE1262243B (de) * 1964-03-18 1968-03-07 Ibm Deutschland Verfahren zum epitaktischen Aufwachsen von Halbleitermaterial
US3459152A (en) * 1964-08-28 1969-08-05 Westinghouse Electric Corp Apparatus for epitaxially producing a layer on a substrate
NL6513397A (ko) * 1964-11-02 1966-05-03 Siemens Ag
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
US3523816A (en) * 1967-10-27 1970-08-11 Texas Instruments Inc Method for producing pure silicon
US3925146A (en) * 1970-12-09 1975-12-09 Minnesota Mining & Mfg Method for producing epitaxial thin-film fabry-perot cavity suitable for use as a laser crystal by vacuum evaporation and product thereof
BE806098A (fr) * 1973-03-28 1974-02-01 Siemens Ag Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure
US4076859A (en) * 1973-08-29 1978-02-28 Schladitz-Whiskers Ag Process for metallizing strips, sheets or the like
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4108108A (en) * 1974-07-10 1978-08-22 Schladitz-Whiskers Ag. Apparatus for metallizing strips, sheets or the like
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
DE2528192C3 (de) * 1975-06-24 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium auf einen aus elementarem Silicium bestehenden stabförmigen Trägerkörper
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
DE2753567C3 (de) * 1977-12-01 1982-04-15 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen
US4233934A (en) * 1978-12-07 1980-11-18 General Electric Company Guard ring for TGZM processing
JPS5595319A (en) * 1979-01-12 1980-07-19 Wacker Chemitronic Pure semiconductor material* specially silicon precipitating device and method
DE2928456C2 (de) * 1979-07-13 1983-07-07 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinem Silicium
EP0053150A1 (fr) * 1980-06-13 1982-06-09 Establishment For Science And Technology Procede de fabrication d'une couche mince a structure orientee, dispositif pour la mise en oeuvre de ce procede et produits obtenus
US4444812A (en) * 1980-07-28 1984-04-24 Monsanto Company Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
FR2532783A1 (fr) * 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
JPS61101410A (ja) * 1984-10-24 1986-05-20 Hiroshi Ishizuka 多結晶珪素の製造法及びそのための装置
JPS63285923A (ja) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk シリコン−ゲルマニウム合金の製造方法
DE19528784C1 (de) * 1995-08-04 1996-08-29 Inst Neuwertwirtschaft Gmbh Verfahren zur Reinigung von Inertgasen mittels Sorbenzien
DE19608885B4 (de) * 1996-03-07 2006-11-16 Wacker Chemie Ag Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern
US6365225B1 (en) 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
WO2000049199A1 (en) 1999-02-19 2000-08-24 Gt Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
DE10393962B4 (de) 2002-12-20 2019-03-14 Mattson Technology Inc. Verfahren und Vorrichtung zum Stützen eines Werkstücks und zur Wärmebehandlung des Werkstücks
CN101460398B (zh) * 2006-04-13 2012-08-29 卡伯特公司 通过闭合环路方法生产硅
WO2008058397A1 (en) 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
RU2499768C2 (ru) * 2008-03-10 2013-11-27 Аег Пауэр Солюшнс Б.В. Устройство и способ равномерного электропитания кремниевого стержня
CN101559948B (zh) * 2008-03-10 2014-02-26 安奕极电源系统有限责任公司 在沉积工艺期间在硅棒中产生均匀温度分布的装置和方法
JP5718809B2 (ja) 2008-05-16 2015-05-13 マトソン テクノロジー、インコーポレイテッド 加工品の破壊を防止する方法および装置
ES2331283B1 (es) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas.
DE102008054519A1 (de) * 2008-12-11 2010-06-17 Wacker Chemie Ag Polykristallines germaniumlegiertes Silicium und ein Verfahren zu seiner Herstellung
DE102009010086B4 (de) * 2009-01-29 2013-04-11 Centrotherm Sitec Gmbh Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
US20110229638A1 (en) * 2010-03-19 2011-09-22 Gt Solar Incorporated System and method for polycrystalline silicon deposition
DE102010044755A1 (de) 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Silicium hoher Reinheit
DE102010042869A1 (de) 2010-10-25 2012-04-26 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinen Siliciumstäben

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438110A (en) * 1943-07-28 1948-03-23 Bell Telephone Labor Inc Electrical translating materials and devices and method of making them
DE853926C (de) * 1949-04-02 1952-10-30 Licentia Gmbh Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz
DE865160C (de) * 1951-03-07 1953-01-29 Western Electric Co Verfahren zur Erzeugung einer Germaniumschicht auf einem Germaniumkoerper
DE885756C (de) * 1951-10-08 1953-06-25 Telefunken Gmbh Verfahren zur Herstellung von p- oder n-leitenden Schichten

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1733752A (en) * 1929-10-29 Refractory metal and its manufacture
DE304857C (ko) * 1913-10-16 1918-04-08
US1336017A (en) * 1919-01-16 1920-04-06 Electrometals Ltd Electric blast-furnace
GB183119A (en) * 1921-07-13 1923-01-11 Gen Electric Co Ltd Improved process and apparatus for the transformation of the crystal structure of drawn wires of refractory metals such as tungsten or the like
GB200879A (en) * 1922-03-24 1923-07-24 Philips Nv Improvements in or relating to the manufacture of bodies from metals having a high melting-point
US1617161A (en) * 1922-08-07 1927-02-08 Gen Electric Process of preparing metals
US1650072A (en) * 1925-11-21 1927-11-22 Bbc Brown Boveri & Cie Flame-arc furnace
DE542404C (de) * 1929-03-06 1932-01-23 Steatit Magnesia Akt Ges Verfahren zur Herstellung hochohmiger Widerstaende
DE527105C (de) * 1929-06-05 1931-06-15 Siemens & Halske Akt Ges Verfahren zur Herstellung von Metallueberzuegen auf Gluehfaeden und anderen Koerpern
DE587330C (de) * 1929-08-01 1933-11-02 Philips Nv Verfahren zur Herstellung von Roehren aus Wolfram
US2160177A (en) * 1934-04-13 1939-05-30 Celluloid Corp Apparatus for carrying out chemical reactions
FR865497A (fr) * 1939-05-09 1941-05-24 Philips Nv Appareil servant à déposer des métaux sur un corps incandescent
US2422734A (en) * 1939-05-23 1947-06-24 Jung Erwin Pierre Device for regulating the temperature of electric furnaces of the resistance type
DE765487C (de) * 1940-02-02 1953-11-02 Siemens & Halske A G Einrichtung zur Verdampfung von Stoffen
US2291007A (en) * 1941-02-07 1942-07-28 Lee R Titcomb Electric furnace
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
US2671739A (en) * 1949-06-22 1954-03-09 Bell Telephone Labor Inc Plating with sulfides, selenides, and tellurides of chromium, molybdenum, and tungsten
US2514935A (en) * 1949-08-12 1950-07-11 Gen Electric Variable impedance apparatus
DE906807C (de) * 1949-10-01 1954-03-18 Guenther Dobke Dipl Ing Verfahren zur Herstellung von Kohlekoerpern und Kohleschichten
BE500569A (ko) * 1950-01-13
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
DE863997C (de) * 1951-03-02 1953-01-22 Degussa Abscheidung von Elementen mit metallaehnlichem Charakter aus ihren Verbindungen
US2745067A (en) * 1951-06-28 1956-05-08 True Virgil Automatic impedance matching apparatus
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2754259A (en) * 1952-11-29 1956-07-10 Sprague Electric Co Process and apparatus for growing single crystals
NL89230C (ko) * 1952-12-17 1900-01-01
FR1094760A (ko) * 1953-03-19 1955-05-24
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
NL130620C (ko) * 1954-05-18 1900-01-01
US2808316A (en) * 1954-07-22 1957-10-01 Du Pont Chemical process control apparatus
US2782246A (en) * 1955-03-30 1957-02-19 Texas Instruments Inc Temperature control
NL113990C (ko) * 1955-11-02
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs
NL113918C (ko) * 1957-09-07
US2912311A (en) * 1957-11-20 1959-11-10 Allied Chem Apparatus for production of high purity elemental silicon
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
DE1150366B (de) * 1958-12-09 1963-06-20 Siemens Ag Verfahren zur Herstellung von Reinstsilicium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438110A (en) * 1943-07-28 1948-03-23 Bell Telephone Labor Inc Electrical translating materials and devices and method of making them
DE853926C (de) * 1949-04-02 1952-10-30 Licentia Gmbh Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz
DE865160C (de) * 1951-03-07 1953-01-29 Western Electric Co Verfahren zur Erzeugung einer Germaniumschicht auf einem Germaniumkoerper
DE885756C (de) * 1951-10-08 1953-06-25 Telefunken Gmbh Verfahren zur Herstellung von p- oder n-leitenden Schichten

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CH358411A (de) 1961-11-30
DE1208298B (de) 1966-01-05
GB849718A (en) 1960-09-28
CH424732A (de) 1966-11-30
GB898342A (en) 1962-06-06
NL113118C (ko) 1900-01-01
CH378863A (de) 1964-06-30
DE1217348B (de) 1966-05-26
NL218408A (ko) 1900-01-01
NL130620C (ko) 1900-01-01
US3146123A (en) 1964-08-25
GB833290A (en) 1960-04-21
US2981605A (en) 1961-04-25
US3063811A (en) 1962-11-13
NL233004A (ko) 1900-01-01
DE1212949B (de) 1966-03-24
DE1185449B (de) 1965-01-14
DE1217348C2 (de) 1966-12-22
CH509824A (de) 1971-07-15
US3232792A (en) 1966-02-01
DE1209113B (de) 1966-01-20
NL258754A (ko) 1900-01-01
CH416582A (de) 1966-07-15
US2854318A (en) 1958-09-30
FR1125207A (fr) 1956-10-26
DE1193022B (de) 1965-05-20
DE1102117B (de) 1961-03-16
GB889192A (en) 1962-02-07
DE1211610B (de) 1966-03-03
FR1182346A (fr) 1959-06-24
GB809250A (en) 1959-02-18
DE1223815B (de) 1966-09-01
NL246576A (ko) 1900-01-01
CH440228A (de) 1967-07-31
GB938699A (en) 1963-10-02
NL122356C (ko) 1900-01-01
DE1235266B (de) 1967-03-02

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