KR20080071538A - 처리 장치 - Google Patents
처리 장치 Download PDFInfo
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- KR20080071538A KR20080071538A KR1020080068339A KR20080068339A KR20080071538A KR 20080071538 A KR20080071538 A KR 20080071538A KR 1020080068339 A KR1020080068339 A KR 1020080068339A KR 20080068339 A KR20080068339 A KR 20080068339A KR 20080071538 A KR20080071538 A KR 20080071538A
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
Description
Claims (32)
- 피처리체를 수용하는 처리 용기와,상기 처리 용기내의 상기 피처리체에 플라즈마 처리를 실시하는 처리 기구를 구비하는 처리 장치로서,상기 처리 용기내에서 플라즈마에 노출되는 기재 위에 주기율표 3a족 원소 화합물을 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다도 작은 내식성을 갖는 상기 주기율표 3a족 원소 화합물을 포함하는 막을 구비하는 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 처리 기구는, 유도 결합형 플라즈마 처리를 실시하는 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 처리 기구는, 평행 평판형 플라즈마 처리를 실시하는 것을 특징으로 하는처리 장치.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 처리 기구는, CVD 처리를 실시하는 것을 특징으로 하는처리 장치.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 처리 기구는, 에칭 처리를 실시하는 것을 특징으로 하는처리 장치.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 처리 기구는, 상기 피처리체에 애싱 처리를 실시하는 것을 특징으로 하는처리 장치.
- 피처리 기판을 수용하는 챔버와,상기 챔버의 상부방향에 설치된, 반구 형상, 또는 원통상의 부분과 이 원통상의 부분의 상부방향에 형성된 구면상의 부분을 갖는 돔 형상인 종형 용기(bell jar)와,상기 종형 용기내에 유도전자계를 형성하기 위한 안테나 수단과,상기 안테나 수단에 고주파 전력을 인가하는 고주파 인가 수단과,처리 가스를 공급하는 가스 공급 수단을 구비하며,상기 종형 용기내에 형성된 유도전자계에 의해 플라즈마를 형성하여 처리를 실행하는 처리 장치로서,상기 챔버 및 상기 종형 용기내에서 플라즈마에 노출되는 기재 위에 주기율표 3a족 원소 화합물을 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다도 작은 내식성을 갖는 상기 주기율표 3a족 원소 화합물을 포함하는 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리 기판을 수용하는 챔버와,상기 챔버내에 처리 가스를 공급하는 수단과, 플라즈마를 생성하는 수단을 갖는 상부 전극과,상기 챔버내에서 상기 상부 전극과 대향하여 설치되고, 상기 피처리 기판을 탑재하는 하부 전극과,상기 상부 전극 및 하부 전극 사이에 고주파 전계를 형성하는 고주파 전원과,상기 챔버내에 상기 상부 전극을 통하여 처리 가스를 공급하는 가스 공급 기구와,상기 챔버내를 배기하는 배기 수단을 구비하며,상기 가스 공급 기구에 의해 상기 상부 전극을 통하여 상기 처리 가스를 상기 챔버에 공급하고, 상기 고주파 전계에 의해 플라즈마를 형성하여 처리를 실행하는 처리 장치로서,상기 처리 챔버내에서 상기 플라즈마에 노출되는 기재 위에 주기율표 3a족 원소 화합물을 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다도 작은 내식성을 갖는 상기 주기율표 3a족 원소 화합물을 포함하는 막을 구비하는 것을 특징으로 하는처리 장치.
- 제 1 항, 제 7 항 및 제 8 항 중 어느 한 항에 있어서,상기 주기율표 3a족 원소 화합물은, Y2O3인 것을 특징으로 하는처리 장치.
- 제 1 항, 제 7 항 및 제 8 항 중 어느 한 항에 있어서,상기 주기율표 3a족 원소 화합물은, 이트륨·알루미늄·가넷인 것을 특징으로 하는처리 장치.
- 제 7 항 또는 제 8 항에 있어서,상기 플라즈마에 의해 상기 피처리 기판에 CVD 처리, 에칭 처리 및 애싱 처리 중 어느 하나를 실시하는 것을 특징으로 하는처리 장치.
- 제 10 항에 있어서,상기 주기율표 3a족 원소 화합물을 포함하는 막은, 비정질인 것을 특징으로 하는처리 장치.
- 제 1 항, 제 7 항 및 제 8 항 중 어느 한 항에 있어서,상기 주기율표 3a족 원소 화합물을 포함하는 막은, 실질적으로, Y, Sc, La, Ce, Eu 및 Dy 중 어느 하나의 산화물 또는 Y, Sc, La, Ce, Eu 및 Dy 중 어느 하나의 불화물로부터 선택되는 적어도 하나를 이용하여 용사에 의해 형성되는 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 처리 용기와,상기 처리 용기내에 처리 가스를 도입하는 가스 공급원과,상기 피처리체에 대하여 상기 처리 가스의 플라즈마에 의해 플라즈마 처리를 하는 처리 기구와,상기 처리 용기내를 배기하는 배기 장치를 구비하며,상기 처리 용기내에서 상기 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 챔버와,상기 챔버의 상부에 설치된, 반구 형상, 또는 원통상의 부분과 이 원통상의 부분의 상부방향에 형성된 구면상의 부분을 갖는 돔 형상인 종형 용기와,상기 챔버내에 처리 가스를 도입하는 가스 공급원과,상기 챔버내에 전자계를 형성하는 안테나와,상기 안테나에 고주파 전력을 공급하는 고주파 전원과,상기 처리 용기내를 배기하는 배기 장치를 구비하며,상기 종형 용기내에 형성된 전자계에 의해, 상기 처리 가스의 플라즈마를 생성하여 상기 피처리체를 플라즈마 처리하는 처리 장치로서,상기 챔버 및 상기 종형 용기내에서 상기 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 챔버와,상기 챔버에 배치되고, 이 챔버내에 처리 가스를 도입함과 함께 플라즈마를 생성하는 상부 전극과,상기 상부 전극과 대향하여 설치되고, 상기 피처리체를 탑재하는 하부 전극과,상기 상부 전극과 하부 전극 사이에 고주파 전력을 공급하는 고주파 전원과,상기 챔버내에 상기 상부 전극을 통하여 처리 가스를 도입하는 가스 공급 기구와,상기 챔버내를 배기하는 배기 장치를 구비하며,상기 가스 공급 기구에 의해 상기 챔버 내에, 상기 상부 전극을 통하여 상기 처리 가스를 공급하고, 상기 상부 전극과 상기 하부 전극 사이에 고주파 전력을 인가하여 고주파 전계를 생성하고, 이 고주파 전계에 의해 상기 처리 가스의 플라즈마를 생성하여, 상기 피처리체를 에칭 처리하는 처리 장치로서,상기 챔버내에서 상기 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사 에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 플라즈마 처리할 때에 사용되는 내식성 부재를 갖는 처리 장치로서,기재와,상기 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 플라즈마 에칭할 때에 사용되는 내식성 부재를 갖는 처리 장치로서,기재와,상기 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 제 1 항, 제 2 항, 제 3 항, 제 7 항, 제 8 항 및 제 14 항 내지 제 18 항 중 어느 한 항에 있어서,상기 기재는, 석영, 세라믹, 금속, 금속 합금, 경질 플라스틱 및 표면이 양극 산화 처리된 알루미늄 중 어느 하나로 구성되는 것을 특징으로 하는처리 장치.
- 제 1 항, 제 7 항, 제 8 항 및 제 14 항 내지 제 18 항 중 어느 한 항에 있어서,상기 기재는, 챔버 내측에 설치된 데포쉴드(deposhield)인 것을 특징으로 하는처리 장치.
- 제 8 항 또는 제 16 항에 있어서,상기 기재는, 하부 전극의 주위에 설치된 포커스 링인 것을 특징으로 하는처리 장치.
- 제 8 항 또는 제 16 항에 있어서,상기 기재는, 상부 전극의 주위에 설치된 쉴드 링(shield ring)인 것을 특징으로 하는처리 장치.
- 제 8 항 또는 제 16 항에 있어서,상기 기재는, 상부 전극 및 하부 전극인 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 처리 용기와,상기 처리 용기내에 처리 가스를 도입하는 가스 공급원과,상기 피처리체에 대하여 상기 처리 가스의 플라즈마에 의해 애싱 처리를 하는 처리 기구와,상기 처리 용기내를 배기하는 배기 장치를 구비하며,상기 처리 용기내에서 상기 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 처리 용기와,상기 처리 용기내에 처리 가스를 도입하는 가스 공급원과,상기 피처리체에 대하여 상기 처리 가스의 플라즈마에 의해 CVD 처리를 하는 처리 기구와,상기 처리 용기내를 배기하는 배기 장치를 구비하며,상기 처리 용기내에서 상기 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 처리 용기와,상기 처리 용기의 상부에 배치되는 유전체 부재와,상기 유전체 부재 위에 배치되고, 상기 처리 용기내에 전자계를 형성하기 위한 안테나와,상기 안테나에 고주파 전력을 공급하는 고주파 전원과,상기 처리 용기내에 처리 가스를 도입하는 가스 공급원과,상기 처리 용기내를 배기하는 배기 장치를 구비하며,상기 처리 용기내에 상기 전자계에 의해 상기 처리 가스의 플라즈마를 생성하여, 이 플라즈마에 의해 상기 피처리체에 대하여 플라즈마 처리를 하는 처리 장치로서,상기 처리 용기내에서 상기 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 피처리체를 플라즈마 처리할 때에 사용되고, 데포쉴드를 갖춘 처리 장치로서,상기 데포쉴드는,기재와,상기 플라즈마에 노출되는 상기 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막으로 구성되는 것을 특징으로 하는처리 장치.
- 피처리체를 플라즈마 처리할 때에 사용되고, 포커스 링을 갖춘 처리 장치로서,상기 포커스 링은,기재와,상기 플라즈마에 노출되는 상기 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막으로 구성되는 것을 특징으로 하는처리 장치.
- 피처리체를 플라즈마 처리할 때에 사용되고, 쉴드 링을 갖춘 처리 장치로서,상기 쉴드 링은,기재와,상기 플라즈마에 노출되는 상기 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막으로 구성되는 것을 특징으로 하는처리 장치.
- 피처리체를 플라즈마 처리할 때에 사용되고, 서셉터를 갖춘 처리 장치로서,상기 서셉터는,기재와,상기 플라즈마에 노출되는 상기 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막으로 구성되는 것을 특징으로 하는처리 장치.
- 피처리체를 수용하는 처리 용기와,상기 처리 용기내의 상기 피처리체에 플라즈마 처리를 실시하는 처리 기구를 구비하는 처리 장치로서,상기 처리 용기내에서 플라즈마에 노출되는 기재 위에 Y2O3를 이용하여 용사에 의해 형성되고, CF4와 Ar과 O2의 혼합 가스의 플라즈마에 의한 삭감량이 알루미나 부재의 삭감량보다 작은 내식성을 갖는 상기 Y2O3의 막을 구비하는 것을 특징으로 하는처리 장치.
- 제 24 항 내지 제 31 항 중 어느 한 항에 있어서,상기 기재는, 석영, 세라믹, 금속, 금속 합금, 경질 플라스틱 및 표면이 양극 산화 처리된 알루미늄 중 어느 하나로 구성되는 것을 특징으로 하는처리 장치.
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