JP5740203B2 - プラズマ処理装置及びその処理ガス供給構造 - Google Patents
プラズマ処理装置及びその処理ガス供給構造 Download PDFInfo
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- JP5740203B2 JP5740203B2 JP2011102749A JP2011102749A JP5740203B2 JP 5740203 B2 JP5740203 B2 JP 5740203B2 JP 2011102749 A JP2011102749 A JP 2011102749A JP 2011102749 A JP2011102749 A JP 2011102749A JP 5740203 B2 JP5740203 B2 JP 5740203B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
Description
Claims (11)
- 処理チャンバー内に誘導結合プラズマを発生させて前記処理チャンバー内に収容された基板の処理を行うプラズマ処理装置であって、
前記処理チャンバーの上部開口を覆うように設けられた誘電体窓と、
前記処理チャンバー外側で、前記誘電体窓の上部に配設された高周波コイルと、
前記誘電体窓の下面に設けられたガス供給機構と、
前記ガス供給機構に処理ガスを導入する処理ガス導入部と、
前記誘電体窓及び前記ガス供給機構を支持する上蓋と、
を備え、
前記上蓋は、その内部に処理ガス導入路が形成され、前記処理ガス導入路と連通して前記処理ガス導入部が接続され、
前記ガス供給機構は、
複数の板体を積層した積層体からなり、
前記板体には処理ガスの吐出部となる位置に透孔が形成され、
前記板体と板体との間には、径方向に沿った溝からなり、前記透孔の縁部に開口する、複数の溝状ガス流路が形成され、
前記板体の外周端部には、前記溝状ガス流路に連通し、該板体の周方向に沿ってガス流路となる環状溝が形成され、
前記環状溝に前記処理ガス導入路が連通し、
前記溝状ガス流路は、前記高周波コイルに直交するように設けられている
ことを特徴とするプラズマ処理装置。 - 処理チャンバー内に誘導結合プラズマを発生させて前記処理チャンバー内に収容された基板の処理を行うプラズマ処理装置であって、
前記処理チャンバーの上部開口を覆うように設けられた誘電体窓と、
前記処理チャンバー外側で、前記誘電体窓の上部に配設された高周波コイルと、
前記誘電体窓の下面に設けられたガス供給機構と、
前記ガス供給機構に処理ガスを導入する処理ガス導入部と、
前記誘電体窓及び前記ガス供給機構を支持する上蓋と、
を備え、
前記上蓋は、その内部に処理ガス導入路が形成され、前記処理ガス導入路と連通して前記処理ガス導入部が接続され、
前記ガス供給機構は、
複数の板体を積層した積層体からなり、前記板体の外径が前記誘電体窓側の前記板体ほど大きく構成され、
前記板体には処理ガスの吐出部となる位置に透孔が形成され、
前記板体と板体との間には、径方向に沿った溝からなり、前記透孔の縁部に開口する、複数の溝状ガス流路が形成され、
前記板体の外周端部には、前記溝状ガス流路に連通し、該板体の周方向に沿ってガス流路となる環状溝が形成され、
前記環状溝に前記処理ガス導入路が連通し、
前記溝状ガス流路は、前記高周波コイルに直交するように設けられている
ことを特徴とするプラズマ処理装置。 - 請求項1又は2記載のプラズマ処理装置であって、
前記誘電体が、石英又はセラミックスから構成されていることを特徴とするプラズマ処理装置。 - 請求項1〜3いずれか1項記載のプラズマ処理装置であって、
前記板体が環状とされていることを特徴とするプラズマ処理装置。 - 請求項4記載のプラズマ処理装置であって、
環状の前記板体が、前記誘電体窓側の前記板体ほど内径が小さく構成されていることを特徴とするプラズマ処理装置。 - 請求項4記載のプラズマ処理装置であって、
環状の板体の内径が、全て同一とされていることを特徴とするプラズマ処理装置。 - 請求項1〜6いずれか1項記載のプラズマ処理装置であって、
前記板体の前記溝状ガス流路の部分に金属薄膜が形成されていることを特徴とするプラズマ処理装置。 - 内部に誘導結合プラズマを発生させる処理チャンバー内に処理ガスを供給するプラズマ処理装置の処理ガス供給構造であって、
前記処理チャンバーの上部開口を覆うように設けられた誘電体窓と、
前記処理チャンバー外側で、前記誘電体窓の上部に配設された高周波コイルと、
前記誘電体窓の下面に設けられたガス供給機構と、
前記ガス供給機構に処理ガスを導入する処理ガス導入部と、
前記誘電体窓及び前記ガス供給機構を支持する上蓋と、
を備え、
前記上蓋は、その内部に処理ガス導入路が形成され、前記処理ガス導入路と連通して前記処理ガス導入部が接続され、
前記ガス供給機構は、
複数の板体を積層した積層体からなり、
前記板体には処理ガスの吐出部となる位置に透孔が形成され、
前記板体と板体との間には、径方向に沿った溝からなり、前記透孔の縁部に開口する、複数の溝状ガス流路が形成され、
前記板体の外周端部には、前記溝状ガス流路に連通し、該板体の周方向に沿ってガス流路となる環状溝が形成され、
前記環状溝に前記処理ガス導入路が連通し、
前記溝状ガス流路は、前記高周波コイルに直交するように設けられている
ことを特徴とするプラズマ処理装置の処理ガス供給構造。 - 請求項8記載のプラズマ処理装置の処理ガス供給構造であって、
前記板体が環状とされていることを特徴とするプラズマ処理装置の処理ガス供給構造。 - 請求項9記載のプラズマ処理装置の処理ガス供給構造であって、
環状の前記板体が、前記誘電体窓側の前記板体ほど内径が小さく構成されていることを特徴とするプラズマ処理装置の処理ガス供給構造。 - 請求項8又は9記載のプラズマ処理装置の処理ガス供給構造であって、
前記板体の外径が、前記誘電体窓側の前記板体ほど大きく構成されていることを特徴とするプラズマ処理装置の処理ガス供給構造。
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JP2011102749A JP5740203B2 (ja) | 2010-05-26 | 2011-05-02 | プラズマ処理装置及びその処理ガス供給構造 |
US13/115,193 US8674607B2 (en) | 2010-05-26 | 2011-05-25 | Plasma processing apparatus and processing gas supply structure thereof |
EP20110004311 EP2390898B1 (en) | 2010-05-26 | 2011-05-25 | Plasma processing apparatus and processing gas supply structure thereof |
KR1020110049762A KR101859555B1 (ko) | 2010-05-26 | 2011-05-25 | 플라즈마 처리 장치 및 그 처리 가스 공급 구조 |
TW100118223A TWI544838B (zh) | 2010-05-26 | 2011-05-25 | Plasma processing device and its treatment gas supply structure |
CN201110142111.2A CN102263025B (zh) | 2010-05-26 | 2011-05-26 | 等离子体处理装置及其处理气体供给机构 |
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JP2010120242 | 2010-05-26 | ||
JP2010120242 | 2010-05-26 | ||
JP2011102749A JP5740203B2 (ja) | 2010-05-26 | 2011-05-02 | プラズマ処理装置及びその処理ガス供給構造 |
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JP2012009829A JP2012009829A (ja) | 2012-01-12 |
JP5740203B2 true JP5740203B2 (ja) | 2015-06-24 |
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EP (1) | EP2390898B1 (ja) |
JP (1) | JP5740203B2 (ja) |
KR (1) | KR101859555B1 (ja) |
CN (1) | CN102263025B (ja) |
TW (1) | TWI544838B (ja) |
Families Citing this family (14)
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---|---|---|---|---|
JP5718011B2 (ja) * | 2010-10-13 | 2015-05-13 | 東京エレクトロン株式会社 | プラズマ処理装置及びその処理ガス供給構造 |
US9245717B2 (en) * | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
TWI565825B (zh) * | 2012-06-07 | 2017-01-11 | 索泰克公司 | 沉積系統之氣體注入組件及相關使用方法 |
US9536710B2 (en) * | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
US10249511B2 (en) * | 2014-06-27 | 2019-04-02 | Lam Research Corporation | Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus |
US20160002784A1 (en) | 2014-07-07 | 2016-01-07 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for depositing a monolayer on a three dimensional structure |
US20160033070A1 (en) * | 2014-08-01 | 2016-02-04 | Applied Materials, Inc. | Recursive pumping member |
WO2017127163A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US11670490B2 (en) * | 2017-09-29 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit fabrication system with adjustable gas injector |
US11600517B2 (en) * | 2018-08-17 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Screwless semiconductor processing chambers |
TWI780384B (zh) * | 2018-12-21 | 2022-10-11 | 日商Toto股份有限公司 | 靜電吸盤 |
CN113249707A (zh) * | 2021-04-21 | 2021-08-13 | 拓荆科技股份有限公司 | 一种薄膜沉积装置和薄膜沉积方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
JP3243125B2 (ja) * | 1994-06-27 | 2002-01-07 | 東京エレクトロン株式会社 | 処理装置 |
US5746875A (en) * | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
US5846883A (en) * | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
JP3485505B2 (ja) | 1999-09-17 | 2004-01-13 | 松下電器産業株式会社 | 処理装置 |
TW514996B (en) * | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
US6716303B1 (en) * | 2000-10-13 | 2004-04-06 | Lam Research Corporation | Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same |
US6660662B2 (en) | 2001-01-26 | 2003-12-09 | Applied Materials, Inc. | Method of reducing plasma charge damage for plasma processes |
JP2003323997A (ja) * | 2002-04-30 | 2003-11-14 | Lam Research Kk | プラズマ安定化方法およびプラズマ装置 |
KR100964398B1 (ko) * | 2003-01-03 | 2010-06-17 | 삼성전자주식회사 | 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치 |
JP4382505B2 (ja) * | 2004-01-22 | 2009-12-16 | パナソニック株式会社 | プラズマエッチング装置の誘電板の製造方法 |
EP1662546A1 (en) * | 2004-11-25 | 2006-05-31 | The European Community, represented by the European Commission | Inductively coupled plasma processing apparatus |
WO2007026889A1 (ja) * | 2005-09-01 | 2007-03-08 | Matsushita Electric Industrial Co., Ltd. | プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法 |
JP5252931B2 (ja) * | 2008-01-16 | 2013-07-31 | 日本碍子株式会社 | セラミックプラズマ反応器、及びプラズマ反応装置 |
US8377209B2 (en) * | 2008-03-12 | 2013-02-19 | Applied Materials, Inc. | Linear plasma source for dynamic (moving substrate) plasma processing |
JP5396745B2 (ja) * | 2008-05-23 | 2014-01-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN201313934Y (zh) * | 2008-09-10 | 2009-09-23 | 李刚 | 一种用于化学气相淀积的气体导入装置 |
JP5554099B2 (ja) * | 2010-03-18 | 2014-07-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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2011
- 2011-05-02 JP JP2011102749A patent/JP5740203B2/ja active Active
- 2011-05-25 US US13/115,193 patent/US8674607B2/en active Active
- 2011-05-25 KR KR1020110049762A patent/KR101859555B1/ko active IP Right Grant
- 2011-05-25 TW TW100118223A patent/TWI544838B/zh active
- 2011-05-25 EP EP20110004311 patent/EP2390898B1/en not_active Not-in-force
- 2011-05-26 CN CN201110142111.2A patent/CN102263025B/zh active Active
Also Published As
Publication number | Publication date |
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EP2390898A3 (en) | 2012-02-01 |
TW201223343A (en) | 2012-06-01 |
CN102263025B (zh) | 2014-01-01 |
CN102263025A (zh) | 2011-11-30 |
EP2390898A2 (en) | 2011-11-30 |
KR101859555B1 (ko) | 2018-05-18 |
US20110291568A1 (en) | 2011-12-01 |
KR20110129829A (ko) | 2011-12-02 |
EP2390898B1 (en) | 2014-05-14 |
US8674607B2 (en) | 2014-03-18 |
TWI544838B (zh) | 2016-08-01 |
JP2012009829A (ja) | 2012-01-12 |
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