JP7340170B2 - ガス導入構造、熱処理装置及びガス供給方法 - Google Patents
ガス導入構造、熱処理装置及びガス供給方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims description 484
- 239000002994 raw material Substances 0.000 claims description 182
- 238000010790 dilution Methods 0.000 claims description 64
- 239000012895 dilution Substances 0.000 claims description 64
- 239000003085 diluting agent Substances 0.000 claims description 43
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 26
- 238000004088 simulation Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000012495 reaction gas Substances 0.000 description 8
- 230000014759 maintenance of location Effects 0.000 description 7
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Description
一実施形態の成膜装置について、図1及び図2を参照して説明する。図1及び図2は、それぞれ熱処理装置の構成例を示す縦断面図及び横断面図である。
熱処理装置1に用いられる原料ガス供給部の一例について、図3~図5を参照して説明する。図3、図4及び図5は、それぞれガス導入構造の一例を示す斜視図、断面図及び概略図である。
次に、一実施形態のガス導入構造の効果を確認するために行ったシミュレーション実験について説明する。図8は、シミュレーション実験に用いたガス導入構造を説明するための図である。
処理容器内の圧力:0.4Torr(53Pa)
原料ガス供給管に導入されるガス:HCD/N2(300/5000sccm)
希釈ガス供給管に導入されるガス:N2(1000sccm)
処理容器内の圧力:0.4Torr(53Pa)
原料ガス供給管に導入されるガス:HCD/N2(300/5000sccm)
希釈ガス供給管に導入されるガス:N2(100、500、1000sccm)
34 処理容器
40 ガス供給部
41 排気部
42 加熱部
100,600,700 原料ガス供給部
110,610,710 原料ガス供給管
111,611,711 ガス吐出孔
120,620,720 希釈ガス供給管
130,630 接続管
730 接続スリット
Claims (9)
- 縦長の処理容器内に処理ガスを供給するガス導入構造であって、
前記処理容器内において該処理容器の長手方向に沿って延びると共に該長手方向に沿って形成された複数のガス吐出孔を有する処理ガス供給管と、
前記処理容器内において該処理容器の長手方向に沿って延びる希釈ガス供給管と、
前記処理ガス供給管と前記希釈ガス供給管とを接続する接続部と、
を備え、
前記処理ガス供給管は、下端から上端に向けて処理ガスが導入されるよう構成され、
前記希釈ガス供給管は、下端から上端に向けて前記処理ガスが導入されることなく、前記下端から前記上端に向けて希釈ガスが導入されるよう構成され、
前記接続部は、前記処理ガス供給管及び前記希釈ガス供給管の前記下端よりも前記上端に近い側である上部の1箇所のみで前記処理ガス供給管の内部と前記希釈ガス供給管の内部とを連通させるよう構成される、
ガス導入構造。 - 前記接続部は、管状に形成されている、
請求項1に記載のガス導入構造。 - 前記接続部は、前記処理ガス供給管の長手方向に沿って延びるように形成されている、
請求項1に記載のガス導入構造。 - 前記処理ガス供給管と前記希釈ガス供給管とは、前記処理容器の周方向に沿って並んで配置されている、
請求項1乃至3のいずれか一項に記載のガス導入構造。 - 前記処理ガスは、原料ガスである、
請求項1乃至4のいずれか一項に記載のガス導入構造。 - 前記原料ガスは、熱分解温度以上の温度に加熱された前記処理容器内に前記処理ガス供給管を介して導入される、
請求項5に記載のガス導入構造。 - 前記希釈ガスは、不活性ガス又は水素ガスである、
請求項1乃至6のいずれか一項に記載のガス導入構造。 - 縦長の処理容器と、
前記処理容器内に処理ガスを供給するガス導入構造と、
前記処理容器内の前記処理ガスを排気する排気部と、
前記処理容器の外周側に配置された加熱部と、
を備え、
前記ガス導入構造は、
前記処理容器内において該処理容器の長手方向に沿って延びると共に該長手方向に沿って形成された複数のガス吐出孔を有する処理ガス供給管と、
前記処理容器内において該処理容器の長手方向に沿って延びる希釈ガス供給管と、
前記処理ガス供給管と前記希釈ガス供給管とを接続する接続部と、
を備え、
前記処理ガス供給管は、下端から上端に向けて処理ガスが導入されるよう構成され、
前記希釈ガス供給管は、下端から上端に向けて前記処理ガスが導入されることなく、前記下端から前記上端に向けて希釈ガスが導入されるよう構成され、
前記接続部は、前記処理ガス供給管及び前記希釈ガス供給管の前記下端よりも前記上端に近い側である上部の1箇所のみで前記処理ガス供給管の内部と前記希釈ガス供給管の内部とを連通させるよう構成される、
熱処理装置。 - ガス導入構造によって縦長の処理容器内に処理ガスを供給するガス供給方法であって、
前記ガス導入構造は、
前記処理容器内において該処理容器の長手方向に沿って延びると共に該長手方向に沿って形成された複数のガス吐出孔を有する処理ガス供給管と、
前記処理容器内において該処理容器の長手方向に沿って延びる希釈ガス供給管と、
前記処理ガス供給管と前記希釈ガス供給管とを接続する接続部と、
を備え、
前記処理ガス供給管は、下端から上端に向けて処理ガスが導入されるよう構成され、
前記希釈ガス供給管は、下端から上端に向けて前記処理ガスが導入されることなく、前記下端から前記上端に向けて希釈ガスが導入されるよう構成され、
前記接続部は、前記処理ガス供給管及び前記希釈ガス供給管の前記下端よりも前記上端に近い側である上部の1箇所のみで前記処理ガス供給管の内部と前記希釈ガス供給管の内部とを連通させるよう構成され、
前記処理ガス供給管から前記処理容器内に前記処理ガスを供給するときに、前記希釈ガス供給管から前記処理容器内に前記処理ガスを供給することなく前記希釈ガスを供給する、
ガス供給方法。
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