JP5323628B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5323628B2 JP5323628B2 JP2009215586A JP2009215586A JP5323628B2 JP 5323628 B2 JP5323628 B2 JP 5323628B2 JP 2009215586 A JP2009215586 A JP 2009215586A JP 2009215586 A JP2009215586 A JP 2009215586A JP 5323628 B2 JP5323628 B2 JP 5323628B2
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- JP
- Japan
- Prior art keywords
- annular member
- mounting table
- gas
- shower head
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000002093 peripheral effect Effects 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000001174 ascending effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 62
- 239000004065 semiconductor Substances 0.000 description 27
- 238000001020 plasma etching Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Description
Claims (4)
- 内部で基板を処理する処理チャンバーに、前記基板を載置するための載置台と対向するように設けられ、前記載置台と対向する対向面に複数設けられたガス吐出孔から前記基板に向けてガスをシャワー状に供給するシャワーヘッドを具備したプラズマ処理装置であって、
前記対向面に形成された排気のための複数の排気孔と、
前記載置台の周縁部に沿って設けられ上下動可能とされた環状部材であって、上昇位置において前記載置台と前記シャワーヘッドと当該環状部材とによって囲まれた処理空間を形成する環状部材と、
前記環状部材の内壁部分に開口し、前記処理空間内にガスを供給するための複数の環状部材側ガス吐出孔と、
前記環状部材の内壁部分に開口し、前記処理空間内を排気するための複数の環状部材側排気孔と、
を具備したことを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置であって、
前記処理チャンバー側壁の、前記載置台と前記シャワーヘッドとの間の位置に前記基板を搬入・搬出するための開閉自在な開口部が設けられ、前記環状部材を下降させた状態で前記基板の搬入・搬出を行うよう構成されている
ことを特徴とするプラズマ処理装置。 - 請求項1又は2記載のプラズマ処理装置であって、
前記環状部材が絶縁性の被膜に覆われたアルミニウムから構成されている
ことを特徴とするプラズマ処理装置。 - 請求項1〜3いずれか1項記載のプラズマ処理装置であって、
前記環状部材側ガス吐出孔の少なくとも一部が、水平方向に対して所定角度を設けて形成されている
ことを特徴とするプラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009215586A JP5323628B2 (ja) | 2009-09-17 | 2009-09-17 | プラズマ処理装置 |
KR1020100090004A KR101672856B1 (ko) | 2009-09-17 | 2010-09-14 | 플라즈마 처리 장치 |
US12/883,761 US8852386B2 (en) | 2009-09-17 | 2010-09-16 | Plasma processing apparatus |
TW099131368A TWI490942B (zh) | 2009-09-17 | 2010-09-16 | Plasma processing device |
CN201010287706.2A CN102024694B (zh) | 2009-09-17 | 2010-09-17 | 等离子处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009215586A JP5323628B2 (ja) | 2009-09-17 | 2009-09-17 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011066202A JP2011066202A (ja) | 2011-03-31 |
JP5323628B2 true JP5323628B2 (ja) | 2013-10-23 |
Family
ID=43729315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009215586A Expired - Fee Related JP5323628B2 (ja) | 2009-09-17 | 2009-09-17 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8852386B2 (ja) |
JP (1) | JP5323628B2 (ja) |
KR (1) | KR101672856B1 (ja) |
CN (1) | CN102024694B (ja) |
TW (1) | TWI490942B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5432686B2 (ja) * | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5444044B2 (ja) * | 2010-03-02 | 2014-03-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
WO2013046640A1 (ja) * | 2011-09-26 | 2013-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR101356664B1 (ko) * | 2012-02-03 | 2014-02-05 | 주식회사 유진테크 | 측방배기 방식 기판처리장치 |
KR101598465B1 (ko) * | 2014-09-30 | 2016-03-02 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR101682155B1 (ko) * | 2015-04-20 | 2016-12-02 | 주식회사 유진테크 | 기판 처리 장치 |
JP5872089B1 (ja) * | 2015-04-27 | 2016-03-01 | 中外炉工業株式会社 | シャワープレート装置 |
KR101792941B1 (ko) * | 2015-04-30 | 2017-11-02 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 | 화학기상증착장치 및 그 세정방법 |
KR102151631B1 (ko) * | 2016-01-22 | 2020-09-03 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP6890085B2 (ja) * | 2017-11-30 | 2021-06-18 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7149739B2 (ja) * | 2018-06-19 | 2022-10-07 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
KR20210016946A (ko) * | 2019-08-06 | 2021-02-17 | 삼성전자주식회사 | 샤워헤드 및 이를 구비하는 기판 처리장치 |
US11499223B2 (en) * | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
Family Cites Families (28)
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DE4011933C2 (de) * | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
JP2662365B2 (ja) | 1993-01-28 | 1997-10-08 | アプライド マテリアルズ インコーポレイテッド | 改良された排出システムを有する単一基板式の真空処理装置 |
JPH0820879A (ja) * | 1994-07-08 | 1996-01-23 | Nissin Electric Co Ltd | プラズマ処理装置 |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US5614026A (en) * | 1996-03-29 | 1997-03-25 | Lam Research Corporation | Showerhead for uniform distribution of process gas |
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US20040149214A1 (en) * | 1999-06-02 | 2004-08-05 | Tokyo Electron Limited | Vacuum processing apparatus |
KR100728244B1 (ko) * | 1999-11-18 | 2007-06-13 | 동경 엘렉트론 주식회사 | 실리레이션처리장치 및 방법 |
TW514996B (en) * | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
JP4602532B2 (ja) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2002176029A (ja) * | 2000-12-05 | 2002-06-21 | Sony Corp | エッチング装置 |
US6800173B2 (en) * | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
JP4433614B2 (ja) * | 2001-01-17 | 2010-03-17 | ソニー株式会社 | エッチング装置 |
JP3616366B2 (ja) * | 2001-10-23 | 2005-02-02 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
KR100443908B1 (ko) * | 2001-10-25 | 2004-08-09 | 삼성전자주식회사 | 플라즈마 화학기상증착장치 및 이를 이용한나이트라이드막 형성방법 |
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JP2006019552A (ja) * | 2004-07-02 | 2006-01-19 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびそれを用いた半導体装置の製造方法 |
KR20060059305A (ko) * | 2004-11-26 | 2006-06-01 | 삼성전자주식회사 | 반도체 공정 장비 |
JP2006344701A (ja) | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | エッチング装置およびエッチング方法 |
JP4859472B2 (ja) * | 2006-02-08 | 2012-01-25 | 独立行政法人物質・材料研究機構 | プラズマプロセス装置 |
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-
2009
- 2009-09-17 JP JP2009215586A patent/JP5323628B2/ja not_active Expired - Fee Related
-
2010
- 2010-09-14 KR KR1020100090004A patent/KR101672856B1/ko not_active Application Discontinuation
- 2010-09-16 US US12/883,761 patent/US8852386B2/en active Active
- 2010-09-16 TW TW099131368A patent/TWI490942B/zh not_active IP Right Cessation
- 2010-09-17 CN CN201010287706.2A patent/CN102024694B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101672856B1 (ko) | 2016-11-04 |
US8852386B2 (en) | 2014-10-07 |
TWI490942B (zh) | 2015-07-01 |
CN102024694A (zh) | 2011-04-20 |
CN102024694B (zh) | 2013-05-08 |
US20110061813A1 (en) | 2011-03-17 |
KR20110030360A (ko) | 2011-03-23 |
JP2011066202A (ja) | 2011-03-31 |
TW201126598A (en) | 2011-08-01 |
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