JP4331479B2 - 半導体処理装置における高靭性ジルコニアセラミック構成要素とコーティングおよびその製造方法 - Google Patents
半導体処理装置における高靭性ジルコニアセラミック構成要素とコーティングおよびその製造方法 Download PDFInfo
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- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 title claims abstract description 148
- 238000000576 coating method Methods 0.000 title claims abstract description 59
- 239000000919 ceramic Substances 0.000 title claims abstract description 51
- 238000012545 processing Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000011248 coating agent Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 24
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 22
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000007788 roughening Methods 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
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- 238000004544 sputter deposition Methods 0.000 claims description 4
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- 238000007654 immersion Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 229910002082 tetragonal zirconia polycrystal Inorganic materials 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 16
- 230000007797 corrosion Effects 0.000 abstract description 16
- 239000002245 particle Substances 0.000 abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 abstract description 14
- 238000005524 ceramic coating Methods 0.000 abstract description 14
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003870 refractory metal Substances 0.000 abstract description 3
- 239000010935 stainless steel Substances 0.000 abstract description 3
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000007750 plasma spraying Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
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- 238000005422 blasting Methods 0.000 description 3
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- 238000009826 distribution Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000005382 thermal cycling Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- -1 "HAYNES242" Chemical compound 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010987 cubic zirconia Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004814 ceramic processing Methods 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
- Ceramic Capacitors (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
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Description
本発明は、一般に、半導体ウェーハの処理に関連し、より詳細には処理中のパーティクル汚染及び金属汚染を削減する内部表面を有する高密度プラズマエッチングチャンバーに関連する。
半導体処理の分野において、真空処理チャンバーは一般に、エッチングガスもしくは成膜ガス(deposition gas)を真空チャンバーへ供給し、RF電界(RF field)をガスにかけてプラズマ状態へ励起させることにより基板上の物質のエッチングや化学気相成長法(chemical vapor depositing:CVD)を行うために利用されている。平行平板(parallel plate)の例として、変圧器結合プラズマ(transformer coupled plasma:TCP(登録商標))、別名誘導結合プラズマ(inductively coupled plasma:ICP)や、電子サイクロトロン共鳴(electron-cyclotron resonance:ECR)反応室、それらの構成要素は、本願と同じ出願人による米国特許第4,340.462号、第4,948,458号、第5,200,232号及び第5,820,723号に開示されている。そのような反応室におけるプラズマ環境の腐食性(corrosive nature)及びパーティクル汚染及び/又は重金属汚染(heavy metal contamination)を最小化する要求のために、そのような構成部品には高い耐食性が特に求められる。
本発明の第1の実施形態は、半導体処理装置の構成要素を作る方法を提供する。当該方法は、その構成要素の最も外側の表面(outermost surface)に高靭性ジルコニアセラミックコーティング(zirconia toughened ceramic coating)を形成するような、構成要素の表面への高靭性ジルコニアセラミックコーティングを含むプロセスである。
本発明は、プラズマ反応チャンバーの部品のような、半導体処理装置の構成要素の表面に耐食性を与えるための有効な方法を提供する。このような構成要素には、チャンバー壁、基板支持部、ガス供給システム、(シャワーヘッド、バッフル、リング、ノズルなどを含む)、ファスナー、加熱装置、プラズマスクリーン、ライナー、ロボットアームのような搬送モジュール構成要素、ファスナー、内部および外部チャンバー壁等及びそれらに類する構成要素が含まれる。本発明においては、これらの構成要素、高靭性ジルコニアセラミックで製造することができ、また、プラズマにさらされる表面を高靭性ジルコニアセラミック材料でコーティングまたは他の方法で覆うことができる。
2)正方晶ジルコニア多結晶体(tetragonal zirconia polycrystals:TZP)。この全てのジルコニア粒子は正方晶である。約2−3mol%のY2O3と10-12mol%のCeO2をジルコニアに加え、正方晶相が安定な状況で焼結または他の熱処理を行うことで作られる;
3)ジルコニア分散高靭性セラミック(zirconia dispersion toughened ceramics:ZTC)。アルミナなどのほかのセラミックに正方晶ジルコニアを分散させることで作られる。高靭性ジルコニアセラミックについては、"加工材料ハンドブック(Engineered Materials Handbook)", 第4巻(Vol.4), セラミック及びガラス(Ceramics and Glass), pp.775-786 (ASM International, 1991)に述べられている。
Claims (9)
- 半導体処理装置の構成要素の表面をコーティングするための方法であって、半導体処理装置の構成要素の表面にセラミック層を成膜する工程を備え、前記セラミック層は最も外側の表面に形成され、
前記セラミック層が、本質的に、正方晶ジルコニア多結晶体(TZP)材料又は部分強化ジルコニア(PSZ)からなり、
前記構成要素は、プラズマ環境、又は、プラズマ環境に関連するバイアス電圧にさらされる部分を有し、
前記構成要素が、プラズマチャンバー壁、チャンバーライナー、ガス供給板、ガスリング、誘電体ウィンドウ、およびフォーカスリングのうちから、選択されるものであることを特徴とする方法。 - 前記セラミック層が、スパッタリング、浸漬めっき、化学気相成長法、物理気相成長法、熱間等静圧圧縮成形、冷間等静圧圧縮成形、圧縮成形、鋳込成形、成形と焼結、及び溶射のうちから選択される技術により適用されることを特徴とする請求項1に記載の方法。
- 前記セラミック層が、0.0254から1.27mmまでの範囲内の厚さに成膜されることを特徴とする請求項1に記載の方法。
- 前記構成要素の表面に中間層を成膜し、前記中間層の上に前記セラミック層を成膜する工程を更に備えることを特徴とする請求項1に記載の方法。
- 前記セラミック層を成膜する前に前記表面に表面ラフ化処理を行い、前記ラフ化された表面上に前記セラミック層を成膜する工程を更に備えることを特徴とする請求項1に記載の方法。
- 前記表面が金属表面であることを特徴とする請求項1に記載の方法。
- 半導体処理装置の構成要素であって、
前記構成要素は、当該構成要素の最外表面を形成するセラミック材料を備え、
前記セラミック材料は、本質的に、正方晶ジルコニア多結晶体(TZP)材料又は部分安定化ジルコニア(PSZ)からなり、
前記構成要素は、プラズマ環境、又は、プラズマ環境に関連するバイアス電圧にさらされる部分を有し、
前記セラミック材料は、基板上にセラミック層を備え、
前記構成要素が、プラズマチャンバー壁、チャンバーライナー、ガス供給板、ガスリング、誘電体ウィンドウ、およびフォーカスリングのうちから、選択されるものであることを特徴とする構成要素。 - 前記セラミック層が、0.0254から1.27mmまでの範囲内の厚さを持つことを特徴とする請求項7に記載の構成要素。
- 請求項7に記載の構成要素を含むプラズマチャンバーを用いた半導体基板処理方法であって、前記半導体基板の露出表面をプラズマに接触させる工程を備えることを特徴とする方法。
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PCT/US2001/043149 WO2002054453A1 (en) | 2000-12-29 | 2001-11-21 | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
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Publication Number | Publication Date |
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Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4602532B2 (ja) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6613442B2 (en) * | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
US6899798B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Reusable ceramic-comprising component which includes a scrificial surface layer |
US7371467B2 (en) * | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US6863926B2 (en) * | 2002-01-15 | 2005-03-08 | David Mark Lynn | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
US20080264564A1 (en) * | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
WO2004049402A2 (en) * | 2002-11-22 | 2004-06-10 | Saint-Gobain Ceramics & Plastics, Inc. | Zirconia toughened alumina esd safe ceramic composition, component, and methods for making same |
US20040134427A1 (en) * | 2003-01-09 | 2004-07-15 | Derderian Garo J. | Deposition chamber surface enhancement and resulting deposition chambers |
JP4208580B2 (ja) * | 2003-01-15 | 2009-01-14 | 日本碍子株式会社 | 複合焼結体およびその製造方法 |
FR2850741B1 (fr) * | 2003-01-30 | 2005-09-23 | Snecma Propulsion Solide | Procede de fabrication d'un panneau de refroidissement actif en materiau composite thermostructural |
US7201687B2 (en) * | 2003-03-06 | 2007-04-10 | Borgwarner Inc. | Power transmission chain with ceramic joint components |
US20040182315A1 (en) * | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Reduced maintenance chemical oxide removal (COR) processing system |
US20050016684A1 (en) * | 2003-07-25 | 2005-01-27 | Applied Materials, Inc. | Process kit for erosion resistance enhancement |
US7329467B2 (en) * | 2003-08-22 | 2008-02-12 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same |
US7579067B2 (en) * | 2004-11-24 | 2009-08-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
US7480974B2 (en) * | 2005-02-15 | 2009-01-27 | Lam Research Corporation | Methods of making gas distribution members for plasma processing apparatuses |
US20060196023A1 (en) * | 2005-03-02 | 2006-09-07 | Min-Lyul Lee | Reduced cost process modules |
US20060231389A1 (en) * | 2005-04-14 | 2006-10-19 | Ravi Mullapudi | Insulated pallet in cleaning chamber |
US7976641B1 (en) | 2005-09-30 | 2011-07-12 | Lam Research Corporation | Extending storage time of removed plasma chamber components prior to cleaning thereof |
US7685965B1 (en) * | 2006-01-26 | 2010-03-30 | Lam Research Corporation | Apparatus for shielding process chamber port |
JP5127147B2 (ja) * | 2006-03-08 | 2013-01-23 | 東京エレクトロン株式会社 | 基板吸着脱離方法 |
US7854820B2 (en) * | 2006-10-16 | 2010-12-21 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
US20080145556A1 (en) * | 2006-12-15 | 2008-06-19 | Tokyo Electron Limited | Method for manufacturing substrate mounting table |
US8097105B2 (en) * | 2007-01-11 | 2012-01-17 | Lam Research Corporation | Extending lifetime of yttrium oxide as a plasma chamber material |
US20080233403A1 (en) * | 2007-02-07 | 2008-09-25 | Timothy Dyer | Method of Making Ceramic Reactor Components and Ceramic Reactor Component Made Therefrom |
US20080216302A1 (en) * | 2007-03-07 | 2008-09-11 | Novellus Systems, Inc. | Methods utilizing organosilicon compounds for manufacturing pre-seasoned components and plasma reaction apparatuses having pre-seasoned components |
TWI567793B (zh) * | 2007-04-27 | 2017-01-21 | 應用材料股份有限公司 | 減小曝露於含鹵素電漿下之表面腐蝕速率的設備 |
US10242888B2 (en) | 2007-04-27 | 2019-03-26 | Applied Materials, Inc. | Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance |
US10622194B2 (en) | 2007-04-27 | 2020-04-14 | Applied Materials, Inc. | Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance |
JP2011500961A (ja) * | 2007-10-11 | 2011-01-06 | バレンス プロセス イクウィップメント,インコーポレイテッド | 化学気相成長反応器 |
US8622021B2 (en) * | 2007-10-31 | 2014-01-07 | Lam Research Corporation | High lifetime consumable silicon nitride-silicon dioxide plasma processing components |
EP2072636B1 (en) * | 2007-12-21 | 2016-08-31 | Sandvik Intellectual Property AB | Method of making a coated cutting tool |
US20090261065A1 (en) * | 2008-04-18 | 2009-10-22 | Lam Research Corporation | Components for use in a plasma chamber having reduced particle generation and method of making |
WO2010009242A2 (en) * | 2008-07-16 | 2010-01-21 | Zimmer, Inc. | Thermally treated ceramic coating for implants |
EP2350334A2 (en) * | 2008-11-04 | 2011-08-03 | Praxair Technology, Inc. | Thermal spray coatings for semiconductor applications |
JP5828836B2 (ja) * | 2009-05-13 | 2015-12-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 陽極処理されたシャワーヘッド |
KR20120090996A (ko) * | 2009-08-27 | 2012-08-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법 |
JP5323628B2 (ja) * | 2009-09-17 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8270141B2 (en) * | 2009-11-20 | 2012-09-18 | Applied Materials, Inc. | Electrostatic chuck with reduced arcing |
WO2011100527A1 (en) * | 2010-02-12 | 2011-08-18 | Morgan Advanced Ceramics, Inc. | Method for texturing ceramic components |
US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
CN108359957A (zh) | 2010-10-29 | 2018-08-03 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
CN102260855A (zh) * | 2011-07-26 | 2011-11-30 | 中微半导体设备(上海)有限公司 | 抗刻蚀层、半导体处理装置及制作方法 |
CN103985659A (zh) * | 2011-07-26 | 2014-08-13 | 中微半导体设备(上海)有限公司 | 一种mocvd半导体处理装置及制作方法 |
CN102260856A (zh) * | 2011-07-26 | 2011-11-30 | 中微半导体设备(上海)有限公司 | 抗刻蚀层、半导体处理装置及制作方法 |
US9448291B2 (en) * | 2011-10-04 | 2016-09-20 | Pressure Biosciences, Inc. | High pressure sample containment system for electromagnetic measurements |
FR2985057B1 (fr) * | 2011-12-23 | 2014-12-12 | Snecma | Procede et dispositif d'estimation d'une epaisseur d'un revetement de barriere thermique en ceramique |
US9034199B2 (en) * | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
CN103794459B (zh) * | 2012-10-29 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 用于等离子处理腔室的气体喷淋头及其涂层形成方法 |
US9340876B2 (en) * | 2012-12-12 | 2016-05-17 | Applied Materials, Inc. | Mask for deposition process |
CN102990772B (zh) * | 2012-12-14 | 2015-02-11 | 武汉钢铁(集团)公司 | 耐火砖等静压成型模具 |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
US9580360B2 (en) * | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
JP6630722B2 (ja) | 2014-08-28 | 2020-01-15 | ビーワイディー カンパニー リミテッド | セラミック基板およびその製造方法、パワーモジュール |
CN105459515B (zh) * | 2014-08-28 | 2017-09-29 | 比亚迪股份有限公司 | 一种陶瓷基板及其制备方法和一种功率模块 |
WO2016099826A1 (en) | 2014-12-19 | 2016-06-23 | Applied Materials, Inc. | Edge ring for a substrate processing chamber |
CN105986245A (zh) * | 2015-02-16 | 2016-10-05 | 中微半导体设备(上海)有限公司 | 改善mocvd反应工艺的部件及改善方法 |
CN106558522B (zh) * | 2015-09-25 | 2021-01-29 | 北京北方华创微电子装备有限公司 | 卡盘及承载装置 |
CN105246260B (zh) * | 2015-11-12 | 2017-12-12 | 浙江展邦电子科技有限公司 | 一种铝基线路板的制造方法 |
US20170211185A1 (en) * | 2016-01-22 | 2017-07-27 | Applied Materials, Inc. | Ceramic showerhead with embedded conductive layers |
CN106711379A (zh) * | 2016-12-06 | 2017-05-24 | 江苏楚汉新能源科技有限公司 | 一种陶瓷隔膜及其制备方法、应用和包含隔膜的电池 |
KR20190132425A (ko) * | 2017-03-21 | 2019-11-27 | 컴포넌트 알이-엔지니어링 컴퍼니, 인코포레이티드 | 높은 부식성 또는 침식성이 있는 산업용 적용들에서의 사용을 위한 세라믹 재료 조립체 |
US10731260B2 (en) | 2017-06-12 | 2020-08-04 | Raytheon Technologies Corporation | Rotor with zirconia-toughened alumina coating |
CN109423606A (zh) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | 聚焦环及其耐腐蚀防护方法 |
DE102018101750A1 (de) * | 2018-01-26 | 2019-08-01 | Rogers Germany Gmbh | Verbundkeramik für eine Leiterplatte und Verfahren zu deren Herstellung |
US11124659B2 (en) * | 2018-01-30 | 2021-09-21 | Lam Research Corporation | Method to selectively pattern a surface for plasma resistant coat applications |
US11014853B2 (en) | 2018-03-07 | 2021-05-25 | Applied Materials, Inc. | Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments |
CN110756811B (zh) * | 2018-07-27 | 2022-05-03 | 佛山市顺德区美的电热电器制造有限公司 | 制备锅具的系统和方法以及锅具 |
CN109877012A (zh) * | 2019-02-09 | 2019-06-14 | 沈阳富创精密设备有限公司 | 一种制备高致密氧化钇涂层的方法 |
CN112481602B (zh) * | 2019-09-11 | 2023-12-15 | 艾特材料有限公司 | 一种在陶瓷背板上沉积金属氧化物薄膜的方法及设备 |
CN113594014B (zh) * | 2020-04-30 | 2024-04-12 | 中微半导体设备(上海)股份有限公司 | 零部件、等离子体反应装置及零部件加工方法 |
KR20230027281A (ko) * | 2020-06-25 | 2023-02-27 | 램 리써치 코포레이션 | 반도체 프로세싱 챔버를 위한 매칭된 화학 물질 컴포넌트 바디 및 코팅 |
CN113845367B (zh) * | 2021-10-08 | 2022-08-26 | 江西信达航科新材料科技有限公司 | 高温抗氧化碳纤维增韧氧化锆陶瓷材料的制备方法及高温抗氧化碳纤维增韧氧化锆陶瓷材料 |
US20230187182A1 (en) * | 2021-12-10 | 2023-06-15 | Applied Materials, Inc. | Plasma resistant arc preventative coatings for manufacturing equpiment components |
DE102022204358A1 (de) * | 2022-05-03 | 2023-11-09 | Robert Bosch Gesellschaft mit beschränkter Haftung | Schutzelement und Plasmaätzkammer mit einem Schutzelement |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US17516A (en) * | 1857-06-09 | Botary pump | ||
US4340462A (en) | 1981-02-13 | 1982-07-20 | Lam Research Corporation | Adjustable electrode plasma processing chamber |
FR2538987A1 (fr) | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
US4820666A (en) * | 1985-03-22 | 1989-04-11 | Noritake Co., Limited | Zirconia base ceramics |
IT1186728B (it) * | 1985-06-04 | 1987-12-16 | Montedison Spa | Ossidi misti di allumina e zirconia sotto forma di particelle sferiche ed aventi distribuzione granulometrica ristretta e processo per la loro preparazione |
JPS62103379A (ja) | 1985-10-29 | 1987-05-13 | Showa Alum Corp | Cvd装置およびドライ・エツチング装置における真空チヤンバの製造方法 |
JPS6379777A (ja) * | 1986-09-24 | 1988-04-09 | 科学技術庁金属材料技術研究所長 | セラミツクス基板上への被覆体の製造法 |
US4751109A (en) | 1987-01-20 | 1988-06-14 | Gte Laboratories Incorporated | A process for depositing a composite ceramic coating on a hard ceramic substrate |
US4702970A (en) | 1987-01-20 | 1987-10-27 | Gte Laboratories Incorporated | Composite coatings on ceramic substrates |
US5262029A (en) | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
US5304248A (en) | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5200232A (en) | 1990-12-11 | 1993-04-06 | Lam Research Corporation | Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors |
CA2108142C (en) | 1991-04-09 | 2002-09-24 | Glen T. Hong | Zirconium oxide ceramics for surfaces exposed to high temperature water oxidation environments |
JPH04333573A (ja) * | 1991-05-09 | 1992-11-20 | Canon Inc | マイクロ波プラズマcvd装置 |
US5494558A (en) | 1992-08-12 | 1996-02-27 | The Regents Of The University Of California | Production of fullerenes by sputtering |
JP2651332B2 (ja) * | 1992-09-21 | 1997-09-10 | 松下電工株式会社 | ジルコニア系複合セラミック焼結体及びその製法 |
FR2699554B1 (fr) | 1992-12-23 | 1995-02-24 | Metallisation Ind Ste Nle | Barrières thermiques, matériau et procédé pour leur élaboration. |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
EP0689618B1 (en) * | 1993-03-24 | 2003-02-26 | Georgia Tech Research Corporation | Method and apparatus for the combustion chemical vapor deposition of films and coatings |
US5522932A (en) | 1993-05-14 | 1996-06-04 | Applied Materials, Inc. | Corrosion-resistant apparatus |
US5558903A (en) | 1993-06-10 | 1996-09-24 | The Ohio State University | Method for coating fullerene materials for tribology |
US5603875A (en) * | 1993-06-11 | 1997-02-18 | Aerospace Coating Systems, Inc. | Method for producing ceramic-based components |
JP2829221B2 (ja) * | 1993-06-30 | 1998-11-25 | 財団法人国際超電導産業技術研究センター | 熱プラズマ蒸発法による金属基板上への酸化物の成膜方法 |
JPH09503989A (ja) | 1993-07-28 | 1997-04-22 | モナシュ・ユニバーシティー | ジルコニア粒子 |
US5798016A (en) | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
US5680013A (en) | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
EP0760526A4 (en) | 1994-05-17 | 2001-01-10 | Hitachi Ltd | PLASMA TREATMENT DEVICE AND METHOD |
US5641375A (en) | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
US5597495A (en) | 1994-11-07 | 1997-01-28 | Keil; Mark | Method and apparatus for etching surfaces with atomic fluorine |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
JPH0920561A (ja) | 1995-06-30 | 1997-01-21 | Kyocera Corp | 半導体用セラミック焼結体およびその製造方法 |
US5824605A (en) | 1995-07-31 | 1998-10-20 | Lam Research Corporation | Gas dispersion window for plasma apparatus and method of use thereof |
US6027792A (en) | 1995-10-03 | 2000-02-22 | Kabushiki Kaisha Kobe Seiko Sho | Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same |
KR0165869B1 (ko) | 1995-10-17 | 1998-12-15 | 김은영 | 내 저온열화 지르코니아 재료 및 그것의 제조방법 |
US5838529A (en) | 1995-12-22 | 1998-11-17 | Lam Research Corporation | Low voltage electrostatic clamp for substrates such as dielectric substrates |
US6123997A (en) | 1995-12-22 | 2000-09-26 | General Electric Company | Method for forming a thermal barrier coating |
EP0803900A3 (en) * | 1996-04-26 | 1999-12-29 | Applied Materials, Inc. | Surface preparation to enhance the adhesion of a dielectric layer |
US5863376A (en) | 1996-06-05 | 1999-01-26 | Lam Research Corporation | Temperature controlling method and apparatus for a plasma processing chamber |
US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US6048798A (en) | 1996-06-05 | 2000-04-11 | Lam Research Corporation | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US5900283A (en) | 1996-11-12 | 1999-05-04 | General Electric Company | Method for providing a protective coating on a metal-based substrate and related articles |
US6117560A (en) | 1996-12-12 | 2000-09-12 | United Technologies Corporation | Thermal barrier coating systems and materials |
US5702766A (en) | 1996-12-20 | 1997-12-30 | Eastman Kodak Company | Process of forming a ceramic article containing a core comprising zirconia and a shell comprising zirconium boride |
GB9717245D0 (en) | 1997-08-15 | 1997-10-22 | Rolls Royce Plc | A metallic article having a thermal barrier coaring and a method of application thereof |
US6074488A (en) | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
US5879523A (en) | 1997-09-29 | 1999-03-09 | Applied Materials, Inc. | Ceramic coated metallic insulator particularly useful in a plasma sputter reactor |
US6087285A (en) | 1997-10-13 | 2000-07-11 | Tosoh Corporation | Zirconia sintered body, process for production thereof, and application thereof |
US6379575B1 (en) | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6641939B1 (en) * | 1998-07-01 | 2003-11-04 | The Morgan Crucible Company Plc | Transition metal oxide doped alumina and methods of making and using |
US6123791A (en) * | 1998-07-29 | 2000-09-26 | Applied Materials, Inc. | Ceramic composition for an apparatus and method for processing a substrate |
US6106959A (en) | 1998-08-11 | 2000-08-22 | Siemens Westinghouse Power Corporation | Multilayer thermal barrier coating systems |
JP3812232B2 (ja) * | 1998-10-23 | 2006-08-23 | 日新電機株式会社 | 多結晶シリコン薄膜形成方法及び薄膜形成装置 |
JP3046288B1 (ja) | 1998-12-28 | 2000-05-29 | 京セラ株式会社 | 半導体・液晶製造装置用部材 |
US6383964B1 (en) * | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
TW465017B (en) * | 1999-04-13 | 2001-11-21 | Applied Materials Inc | A corrosion-resistant protective coating for an apparatus and method for processing a substrate |
US6227140B1 (en) * | 1999-09-23 | 2001-05-08 | Lam Research Corporation | Semiconductor processing equipment having radiant heated ceramic liner |
US6408786B1 (en) * | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
US6391146B1 (en) * | 2000-04-11 | 2002-05-21 | Applied Materials, Inc. | Erosion resistant gas energizer |
WO2002040732A1 (en) * | 2000-11-15 | 2002-05-23 | G.T. Equipment Technologies Inc. | A protective layer for quartz crucibles used for silicon crystallization |
US6537429B2 (en) * | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
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2000
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2001
- 2001-11-21 DE DE60141047T patent/DE60141047D1/de not_active Expired - Lifetime
- 2001-11-21 CN CNB018225179A patent/CN1260770C/zh not_active Expired - Lifetime
- 2001-11-21 JP JP2002555454A patent/JP4331479B2/ja not_active Expired - Lifetime
- 2001-11-21 EP EP01995117A patent/EP1356501B1/en not_active Expired - Lifetime
- 2001-11-21 KR KR1020037008855A patent/KR100898531B1/ko active IP Right Grant
- 2001-11-21 WO PCT/US2001/043149 patent/WO2002054453A1/en active Application Filing
- 2001-11-21 AT AT01995117T patent/ATE454710T1/de not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
TW548737B (en) | 2003-08-21 |
KR100898531B1 (ko) | 2009-05-20 |
ATE454710T1 (de) | 2010-01-15 |
CN1489779A (zh) | 2004-04-14 |
JP2004526053A (ja) | 2004-08-26 |
IL156698A0 (en) | 2004-01-04 |
US20020086153A1 (en) | 2002-07-04 |
US20040023047A1 (en) | 2004-02-05 |
WO2002054453A1 (en) | 2002-07-11 |
DE60141047D1 (de) | 2010-02-25 |
EP1356501A2 (en) | 2003-10-29 |
US7255898B2 (en) | 2007-08-14 |
WO2002054453A9 (en) | 2003-08-21 |
KR20030068569A (ko) | 2003-08-21 |
EP1356501B1 (en) | 2010-01-06 |
US6620520B2 (en) | 2003-09-16 |
CN1260770C (zh) | 2006-06-21 |
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