DE60141047D1 - Zirkonverstärkte keramische komponenten und beschichtungen bei halbleiterherstellungsgeräten und verfahren zu ihrer herstellung - Google Patents
Zirkonverstärkte keramische komponenten und beschichtungen bei halbleiterherstellungsgeräten und verfahren zu ihrer herstellungInfo
- Publication number
- DE60141047D1 DE60141047D1 DE60141047T DE60141047T DE60141047D1 DE 60141047 D1 DE60141047 D1 DE 60141047D1 DE 60141047 T DE60141047 T DE 60141047T DE 60141047 T DE60141047 T DE 60141047T DE 60141047 D1 DE60141047 D1 DE 60141047D1
- Authority
- DE
- Germany
- Prior art keywords
- zirconia
- ceramic
- component
- toughened
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000011226 reinforced ceramic Substances 0.000 title 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 12
- 239000000919 ceramic Substances 0.000 abstract 3
- 238000005524 ceramic coating Methods 0.000 abstract 3
- 229910010293 ceramic material Inorganic materials 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 abstract 2
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 abstract 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Ceramic Capacitors (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/750,056 US6620520B2 (en) | 2000-12-29 | 2000-12-29 | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
PCT/US2001/043149 WO2002054453A1 (en) | 2000-12-29 | 2001-11-21 | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60141047D1 true DE60141047D1 (de) | 2010-02-25 |
Family
ID=25016312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60141047T Expired - Lifetime DE60141047D1 (de) | 2000-12-29 | 2001-11-21 | Zirkonverstärkte keramische komponenten und beschichtungen bei halbleiterherstellungsgeräten und verfahren zu ihrer herstellung |
Country Status (10)
Country | Link |
---|---|
US (2) | US6620520B2 (de) |
EP (1) | EP1356501B1 (de) |
JP (1) | JP4331479B2 (de) |
KR (1) | KR100898531B1 (de) |
CN (1) | CN1260770C (de) |
AT (1) | ATE454710T1 (de) |
DE (1) | DE60141047D1 (de) |
IL (1) | IL156698A0 (de) |
TW (1) | TW548737B (de) |
WO (1) | WO2002054453A1 (de) |
Families Citing this family (78)
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US6613442B2 (en) * | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
US6899798B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Reusable ceramic-comprising component which includes a scrificial surface layer |
US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US6863926B2 (en) * | 2002-01-15 | 2005-03-08 | David Mark Lynn | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
US20080264564A1 (en) | 2007-04-27 | 2008-10-30 | Applied Materials, Inc. | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
JP2006508011A (ja) * | 2002-11-22 | 2006-03-09 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | ジルコニア強化アルミナのesd保護用セラミック組成物、部材及びそれを形成するための方法 |
US20040134427A1 (en) * | 2003-01-09 | 2004-07-15 | Derderian Garo J. | Deposition chamber surface enhancement and resulting deposition chambers |
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US7329467B2 (en) * | 2003-08-22 | 2008-02-12 | Saint-Gobain Ceramics & Plastics, Inc. | Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same |
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-
2000
- 2000-12-29 US US09/750,056 patent/US6620520B2/en not_active Expired - Lifetime
-
2001
- 2001-11-21 JP JP2002555454A patent/JP4331479B2/ja not_active Expired - Lifetime
- 2001-11-21 AT AT01995117T patent/ATE454710T1/de not_active IP Right Cessation
- 2001-11-21 WO PCT/US2001/043149 patent/WO2002054453A1/en active Application Filing
- 2001-11-21 EP EP01995117A patent/EP1356501B1/de not_active Expired - Lifetime
- 2001-11-21 CN CNB018225179A patent/CN1260770C/zh not_active Expired - Lifetime
- 2001-11-21 IL IL15669801A patent/IL156698A0/xx not_active IP Right Cessation
- 2001-11-21 DE DE60141047T patent/DE60141047D1/de not_active Expired - Lifetime
- 2001-11-21 KR KR1020037008855A patent/KR100898531B1/ko active IP Right Grant
- 2001-12-03 TW TW090129837A patent/TW548737B/zh not_active IP Right Cessation
-
2003
- 2003-05-22 US US10/442,980 patent/US7255898B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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KR20030068569A (ko) | 2003-08-21 |
WO2002054453A1 (en) | 2002-07-11 |
US20020086153A1 (en) | 2002-07-04 |
IL156698A0 (en) | 2004-01-04 |
JP4331479B2 (ja) | 2009-09-16 |
CN1260770C (zh) | 2006-06-21 |
EP1356501A2 (de) | 2003-10-29 |
JP2004526053A (ja) | 2004-08-26 |
WO2002054453A9 (en) | 2003-08-21 |
TW548737B (en) | 2003-08-21 |
EP1356501B1 (de) | 2010-01-06 |
US7255898B2 (en) | 2007-08-14 |
CN1489779A (zh) | 2004-04-14 |
US6620520B2 (en) | 2003-09-16 |
ATE454710T1 (de) | 2010-01-15 |
US20040023047A1 (en) | 2004-02-05 |
KR100898531B1 (ko) | 2009-05-20 |
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