KR101843609B1 - 하이브리드 세라믹 샤워헤드 - Google Patents

하이브리드 세라믹 샤워헤드 Download PDF

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KR101843609B1
KR101843609B1 KR1020137026302A KR20137026302A KR101843609B1 KR 101843609 B1 KR101843609 B1 KR 101843609B1 KR 1020137026302 A KR1020137026302 A KR 1020137026302A KR 20137026302 A KR20137026302 A KR 20137026302A KR 101843609 B1 KR101843609 B1 KR 101843609B1
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ceramic
gas distribution
showerhead
faceplate
substrate processing
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KR20140011364A (ko
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모하메드 사브리
람키샨 라오 링엄팰리
칼 에프 리저
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노벨러스 시스템즈, 인코포레이티드
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
KR1020137026302A 2011-03-04 2012-03-02 하이브리드 세라믹 샤워헤드 Active KR101843609B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161449537P 2011-03-04 2011-03-04
US61/449,537 2011-03-04
PCT/US2012/027596 WO2012122054A2 (en) 2011-03-04 2012-03-02 Hybrid ceramic showerhead

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KR1020187008297A Division KR101937115B1 (ko) 2011-03-04 2012-03-02 하이브리드 세라믹 샤워헤드

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KR101843609B1 true KR101843609B1 (ko) 2018-05-14

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US (2) US9441296B2 (enExample)
JP (1) JP5933602B2 (enExample)
KR (2) KR101937115B1 (enExample)
CN (2) CN106884157B (enExample)
SG (2) SG10201602599XA (enExample)
TW (2) TWI566295B (enExample)
WO (1) WO2012122054A2 (enExample)

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