JP2014513868A - 半導体ウェーハをプラズマ・ダイシングする方法及び装置 - Google Patents
半導体ウェーハをプラズマ・ダイシングする方法及び装置 Download PDFInfo
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Abstract
Description
1)破損及び欠けが低減される。
2)20ミクロンを十分に下回るまで、ひき目寸法を低減させることができる。
3)ダイの数が増大しても、処理時間はあまり増大しない。
4)ウェーハが薄ければ薄いほど、処理時間が低減される。
5)ダイのトポロジは直線の形式に制限されない。
Claims (32)
- 基板をプラズマ・ダイシングする方法であって、
壁を有する処理チャンバを供給するステップと、
前記処理チャンバの前記壁に隣接してプラズマ源を供給するステップと、
前記処理チャンバ内に加工物支持部を供給するステップと、
前記基板をキャリア支持部上に配置して加工物を形成するステップと、
前記加工物を前記加工物支持部上へロードするステップと、
前記加工物の上方に配置されたカバー・リングを設けるステップと、
前記プラズマ源によってプラズマを生成するステップと、
前記生成されたプラズマによって前記加工物をエッチングするステップとを含む方法。 - 前記基板をフレーム上の支持フィルム上へ配置して前記加工物を形成するステップをさらに含む、請求項1に記載の方法。
- 前記加工物支持部に結合されたRF電源を供給するステップをさらに含む、請求項1に記載の方法。
- 前記加工物支持部が静電チャックをさらに備える、請求項3に記載の方法。
- 前記加工物支持部内にリフト機構をさらに備え、前記リフト機構上へ前記加工物がロードされる、請求項4に記載の方法。
- 前記静電チャックの外径から前記リフト機構まで延びる充填リングをさらに備える、請求項5に記載の方法。
- 前記高密度源と前記加工物との間に機械的な区画を供給するステップをさらに含む、請求項1に記載の方法。
- 前記エッチング・ステップ中に前記カバー・リングの温度を制御するステップをさらに含む、請求項1に記載の方法。
- 前記カバー・リングが複数の孔をさらに備える、請求項8に記載の方法。
- 基板をプラズマ・ダイシングする方法であって、
壁を有する処理チャンバを供給するステップと、
前記処理チャンバの前記壁に隣接してプラズマ源を供給するステップと、
前記処理チャンバ内に、静電チャックを有する加工物支持部を供給するステップと、
前記基板をキャリア支持部上に配置して加工物を形成するステップと、
前記加工物を前記加工物支持部上へロードするステップと、
前記静電チャックによって前記加工物を前記加工物支持部に固定するステップと、
前記加工物の上方に配置されたカバー・リングを供給するステップと、
前記プラズマ源によってプラズマを生成するステップと、
前記生成されたプラズマによって前記加工物をエッチングするステップと、
前記エッチング・ステップ中に前記カバー・リングの温度を制御するステップとを含む方法。 - 前記基板をフレーム上の支持フィルム上へ配置して前記加工物を形成するステップをさらに含む、請求項10に記載の方法。
- 前記カバー・リングが複数の孔をさらに備える、請求項10に記載の方法。
- 前記高密度源と前記加工物との間に機械的な区画を供給するステップをさらに含む、請求項10に記載の方法。
- 前記加工物支持部内にリフト機構をさらに備え、前記リフト機構上へ前記加工物がロードされる、請求項10に記載の方法。
- 前記静電チャックの外径から前記リフト機構まで延びる充填リングをさらに備える、請求項10に記載の方法。
- 前記静電チャックが単極である、請求項10に記載の方法。
- 前記静電チャックが多極である、請求項10に記載の方法。
- 前記静電チャックが実質上共平面の表面を有する、請求項10に記載の方法。
- 基板の直径と、
静電チャックの直径とをさらに含み、前記静電チャックの直径が前記基板の直径より大きい、
請求項10に記載の方法。 - 基板をプラズマ・ダイシングする方法であって、
前記基板をキャリア支持部上に配置して加工物を形成するステップと、
前記加工物をプラズマ処理チャンバ内へロードするステップと、
第1のエッチング剤ガスを使用する第1のプラズマ・エッチング処理に前記プラズマ処理チャンバ内の前記加工物を露出させるステップと、
個片化後に前記第1のプラズマ・エッチング処理を終了するステップと、
第2のエッチング剤ガスを使用して第2のプラズマ・エッチング処理に前記プラズマ処理チャンバ内の前記加工物を露出させるステップとを含む方法。 - 前記基板をフレーム上の支持フィルム上へ配置して前記加工物を形成するステップをさらに含む、請求項20に記載の方法。
- 前記加工物の上に配置されたカバー・リングを設けるステップをさらに含む、請求項20に記載の方法。
- 前記第1のエッチング剤ガスがハロゲン含有ガスであり、前記第2のエッチング剤ガスが水素含有ガスである、請求項22に記載の方法。
- 前記第1のエッチング処理が時分割多重式のエッチング処理である、請求項23に記載の方法。
- 前記第2のエッチング処理が第2の時分割多重式のエッチング処理である、請求項24に記載の方法。
- 基板をプラズマ・ダイシングする装置であって、
壁を有する処理チャンバと、
前記処理チャンバの前記壁に隣接するプラズマ源と、
静電チャックを有する前記処理チャンバ内の加工物支持部と、
キャリア支持部上に前記基板を有し、前記加工物支持部上へ配置される加工物と、
前記加工物の上方に配置され、前記処理チャンバの前記壁に熱結合されるカバー・リングとを備える装置。 - 前記加工物が、フレーム上の支持フィルム上に前記基板をさらに備える、請求項26に記載の装置。
- 前記カバー・リングがヒート・シンクに熱結合される、請求項26に記載の装置。
- 前記カバー・リングが複数の孔をさらに備える、請求項26に記載の装置。
- 前記高密度源と前記加工物との間に機械的な区画をさらに備える、請求項26に記載の装置。
- 前記加工物支持部内にリフト機構をさらに備え、前記リフト機構上へ前記加工物が配置される、請求項26に記載の装置。
- 前記静電チャックの外径から前記リフト機構まで延びる充填リングをさらに備える、請求項31に記載の装置。
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